IRF6602

Description: MOSFET N-CH 20V 11A DIRECTFET, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric MQ, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 48A (Tc), Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 10V, Power Dissipation (Max): 2.3W (Ta), 42W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: DIRECTFET™ MQ, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 10 V.