Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (136441) > Сторінка 471 з 2275
Фото | Назва | Виробник | Інформація |
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MB95F654LNPFT-G-SNE2 | Infineon Technologies |
![]() Packaging: Tube Package / Case: 24-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 20KB (20K x 8) RAM Size: 1K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: FLASH Core Processor: F²MC-8FX Data Converters: A/D 6x8/12b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, LINbus, SIO, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 24-TSSOP Number of I/O: 20 DigiKey Programmable: Not Verified |
на замовлення 6464 шт: термін постачання 21-31 дні (днів) |
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MB95F654LNPFT-G-SNE2 | Infineon Technologies |
![]() Packaging: Tube Package / Case: 24-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 20KB (20K x 8) RAM Size: 1K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: FLASH Core Processor: F²MC-8FX Data Converters: A/D 6x8/12b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, LINbus, SIO, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 24-TSSOP Number of I/O: 20 DigiKey Programmable: Not Verified |
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MB95F652LNPFT-G-SNE2 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 24-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 8KB (8K x 8) RAM Size: 256 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: FLASH Core Processor: F²MC-8FX Data Converters: A/D 6x8/12b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, LINbus, SIO, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 24-TSSOP Number of I/O: 20 DigiKey Programmable: Not Verified |
на замовлення 9588 шт: термін постачання 21-31 дні (днів) |
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MB95F652LNPFT-G-SNE2 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 24-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 8KB (8K x 8) RAM Size: 256 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: FLASH Core Processor: F²MC-8FX Data Converters: A/D 6x8/12b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, LINbus, SIO, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 24-TSSOP Number of I/O: 20 DigiKey Programmable: Not Verified |
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FS03MR12A6MA1BBPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 400A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 42500pF @ 600V Rds On (Max) @ Id, Vgs: 3.7mOhm @ 400A, 15V Gate Charge (Qg) (Max) @ Vgs: 1320nC @ 15V Vgs(th) (Max) @ Id: 5.55V @ 240mA Supplier Device Package: AG-HYBRIDD-2 Part Status: Active |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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BBY53-03WE6327HTSA1 | Infineon Technologies |
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на замовлення 61312 шт: термін постачання 21-31 дні (днів) |
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BAT54-03WE6327 | Infineon Technologies |
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BBY58-03WE6327 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Diode Type: Single Operating Temperature: -55°C ~ 150°C Capacitance @ Vr, F: 5.5pF @ 6V, 1MHz Capacitance Ratio Condition: C4/C6 Supplier Device Package: PG-SOD323-2-1 Part Status: Active Voltage - Peak Reverse (Max): 10 V Capacitance Ratio: 1.3 |
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BBY53-03WE6327 | Infineon Technologies |
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на замовлення 2450 шт: термін постачання 21-31 дні (днів) |
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IM67D130AXTSA2 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Output Type: Digital, PDM Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm) Sensitivity: -36dB ±1dB @ 94dB SPL Shape: Rectangular Type: MEMS (Silicon) S/N Ratio: 67dB Termination: Solder Pads Direction: Noise Cancelling Port Location: Bottom Height (Max): 0.051" (1.30mm) Grade: Automotive Part Status: Active Current - Supply: 980 µA Voltage Range: 1.62 V ~ 3.6 V Frequency Range: 20 kHz ~ 20 kHz Qualification: AEC-Q103 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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IM67D130AXTSA2 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Output Type: Digital, PDM Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm) Sensitivity: -36dB ±1dB @ 94dB SPL Shape: Rectangular Type: MEMS (Silicon) S/N Ratio: 67dB Termination: Solder Pads Direction: Noise Cancelling Port Location: Bottom Height (Max): 0.051" (1.30mm) Grade: Automotive Part Status: Active Current - Supply: 980 µA Voltage Range: 1.62 V ~ 3.6 V Frequency Range: 20 kHz ~ 20 kHz Qualification: AEC-Q103 |
на замовлення 2321 шт: термін постачання 21-31 дні (днів) |
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MB95F856KPFT-G-SNE2 | Infineon Technologies |
![]() Packaging: Tube Package / Case: 24-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 36KB (36K x 8) RAM Size: 1K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: FLASH Core Processor: F²MC-8FX Data Converters: A/D 4x8/10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V Connectivity: I2C, SIO, UART/USART Peripherals: LVD, POR, PWM, WDT Supplier Device Package: 24-TSSOP Number of I/O: 21 DigiKey Programmable: Not Verified |
на замовлення 3071 шт: термін постачання 21-31 дні (днів) |
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BAS21UE6433HTMA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Diode Configuration: 3 Independent Current - Average Rectified (Io) (per Diode): 250mA (DC) Supplier Device Package: PG-SC74-6 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V |
на замовлення 20630 шт: термін постачання 21-31 дні (днів) |
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CY7C109B-15ZXC | Infineon Technologies |
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на замовлення 1623 шт: термін постачання 21-31 дні (днів) |
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REFSHA35WRC2SYSTOBO1 | Infineon Technologies |
![]() Packaging: Bulk Supplied Contents: Board(s) Part Status: Active |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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BSS139IXTMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 14Ohm @ 100mA, 10V FET Feature: Depletion Mode Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 1V @ 56µA Supplier Device Package: PG-SOT23-3-5 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V |
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FP150R12N3T7BPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 150A NTC Thermistor: Yes Supplier Device Package: AG-ECONO3 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 12 µA Input Capacitance (Cies) @ Vce: 30.1 nF @ 25 V |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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IFF450B12ME4PB11BPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 450A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 450 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 40 W Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 28 nF @ 25 V |
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FZ2400R12HE4B9HDSA2 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 3 Independent Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 2.4kA NTC Thermistor: No Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 3560 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 13500 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 150 nF @ 25 V |
на замовлення 32 шт: термін постачання 21-31 дні (днів) |
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CY8CTMA884LTI-13T | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 88-VFQFN Exposed Pad Mounting Type: Surface Mount Supplier Device Package: 88-QFN (10x10) Part Status: Discontinued at Digi-Key DigiKey Programmable: Not Verified |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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CY8CTMA884AA-23 | Infineon Technologies |
Description: IC TRUETOUCH CAPSENSE 100TQFP Packaging: Bulk Part Status: Obsolete DigiKey Programmable: Not Verified |
на замовлення 2056 шт: термін постачання 21-31 дні (днів) |
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IPA60R380P6 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V Power Dissipation (Max): 31W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 320µA Supplier Device Package: PG-TO220-3-111 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 877 pF @ 100 V |
на замовлення 313 шт: термін постачання 21-31 дні (днів) |
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CY8C24423A-24PXI | Infineon Technologies |
![]() Packaging: Tube Package / Case: 28-DIP (0.300", 7.62mm) Mounting Type: Through Hole Speed: 24MHz Program Memory Size: 4KB (4K x 8) RAM Size: 256 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: M8C Data Converters: A/D 10x14b; D/A 2x9b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V Connectivity: I2C, SPI, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 28-PDIP Number of I/O: 24 DigiKey Programmable: Not Verified |
на замовлення 99007 шт: термін постачання 21-31 дні (днів) |
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IAUA170N10S5N031AUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tj) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 85A, 10V Power Dissipation (Max): 197W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 110µA Supplier Device Package: PG-HSOF-5-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6405 pF @ 50 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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IPT019N08N5ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 247A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 150A, 10V Power Dissipation (Max): 231W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 159µA Supplier Device Package: PG-HSOF-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 40 V |
на замовлення 3900 шт: термін постачання 21-31 дні (днів) |
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6ED2230S12TXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 28-SOIC (0.295", 7.50mm Width), 24 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 10V ~ 20V Input Type: Inverting High Side Voltage - Max (Bootstrap): 1200 V Supplier Device Package: PG-DSO-24 Rise / Fall Time (Typ): 35ns, 20ns Channel Type: 3-Phase Driven Configuration: High-Side or Low-Side Number of Drivers: 6 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.7V, 2.3V Current - Peak Output (Source, Sink): 350mA, 650mA Part Status: Active DigiKey Programmable: Not Verified |
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6ED2230S12TXUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 28-SOIC (0.295", 7.50mm Width), 24 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 10V ~ 20V Input Type: Inverting High Side Voltage - Max (Bootstrap): 1200 V Supplier Device Package: PG-DSO-24 Rise / Fall Time (Typ): 35ns, 20ns Channel Type: 3-Phase Driven Configuration: High-Side or Low-Side Number of Drivers: 6 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.7V, 2.3V Current - Peak Output (Source, Sink): 350mA, 650mA Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 702 шт: термін постачання 21-31 дні (днів) |
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IM323L6G2XKMA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: 26-PowerDIP Module (1.043", 26.50mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Inverter Voltage - Isolation: 2000Vrms Current: 15 A Voltage: 600 V |
на замовлення 235 шт: термін постачання 21-31 дні (днів) |
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IPD220N06L3GATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 30A, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 11µA Supplier Device Package: PG-TO252-3-311 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V |
на замовлення 25056 шт: термін постачання 21-31 дні (днів) |
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MBC410700BPSA1 | Infineon Technologies | Description: MODULE GATE DRIVER |
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C164C18EMCBKXQMA1 | Infineon Technologies |
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C161SL25MAAFXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 80-QFP Mounting Type: Surface Mount Speed: 25MHz RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: ROMless Core Processor: C166 Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Connectivity: EBI/EMI, SPI, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: PG-MQFP-80-7 Part Status: Obsolete Number of I/O: 63 DigiKey Programmable: Not Verified |
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C161SL25MAAFXUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 80-QFP Mounting Type: Surface Mount Speed: 25MHz RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: ROMless Core Processor: C166 Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Connectivity: EBI/EMI, SPI, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: PG-MQFP-80-7 Part Status: Obsolete Number of I/O: 63 DigiKey Programmable: Not Verified |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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C164CI8EMDBFXUMA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 80-QFP Mounting Type: Surface Mount Speed: 20MHz Program Memory Size: 64KB (64K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: OTP Core Processor: C166 Data Converters: A/D 8x10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: PG-MQFP-80-7 Number of I/O: 59 DigiKey Programmable: Not Verified |
на замовлення 631 шт: термін постачання 21-31 дні (днів) |
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C161SL25MAABXUMA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 80-QFP Mounting Type: Surface Mount Speed: 25MHz RAM Size: 2K x 8 Operating Temperature: 0°C ~ 70°C (TA) Oscillator Type: External Program Memory Type: ROMless Core Processor: C166 Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Connectivity: EBI/EMI, SPI, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: PG-MQFP-80-7 Number of I/O: 63 DigiKey Programmable: Not Verified |
на замовлення 4096 шт: термін постачання 21-31 дні (днів) |
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C164CI8E25MDBFXQMA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 80-QFP Mounting Type: Surface Mount Speed: 25MHz Program Memory Size: 64KB (64K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: OTP Core Processor: C166 Data Converters: A/D 8x10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: PG-MQFP-80-7 Number of I/O: 59 DigiKey Programmable: Not Verified |
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SAB-C164CI-LM CA+ | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 80-QFP Mounting Type: Surface Mount Speed: 20MHz RAM Size: 4K x 8 Operating Temperature: 0°C ~ 70°C (TA) Oscillator Type: External Program Memory Type: ROMless Core Processor: C166 Data Converters: A/D 8x10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: PG-MQFP-80-7 Number of I/O: 59 DigiKey Programmable: Not Verified |
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C164CILMCAKNUMA2 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 80-QFP Mounting Type: Surface Mount Speed: 20MHz RAM Size: 4K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: ROMless Core Processor: C166 Data Converters: A/D 8x10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: PG-MQFP-80-7 Number of I/O: 59 DigiKey Programmable: Not Verified |
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C164CI8E25MDBKXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 80-QFP Mounting Type: Surface Mount Speed: 25MHz Program Memory Size: 64KB (64K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: OTP Core Processor: C166 Data Converters: A/D 8x10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: PG-MQFP-80-7 Number of I/O: 59 DigiKey Programmable: Not Verified |
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FF900R17ME7B11BPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 900A NTC Thermistor: Yes IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 900 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 20 mW Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 93.8 nF @ 25 V |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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FF225R17ME7B11BPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 225A NTC Thermistor: Yes IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 225 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 20 mW Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 22.9 nF @ 25 V |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
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FS25R12KE3GBPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Inverter Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 25A NTC Thermistor: Yes Supplier Device Package: AG-ECONO2B Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 145 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 1.8 nF @ 25 V |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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FD900R12IP4DVBOSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 900 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 5100 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 54 nF @ 25 V |
на замовлення 112 шт: термін постачання 21-31 дні (днів) |
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IMD700AQ064X128AAXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 64-WFQFN Exposed Pad Mounting Type: Surface Mount Interface: CAN, I2C, SPI, UART/USART RAM Size: 16K x 8 Operating Temperature: -40°C ~ 115°C (TJ) Voltage - Supply: 5.5V ~ 60V Controller Series: XMC1404 Program Memory Type: FLASH (128kB) Applications: BLDC Controller Input Type: Non-Inverting Core Processor: ARM® Cortex®-M0 Supplier Device Package: PG-VQFN-64-8 Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 3 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 1.045V, 3.85V Current - Peak Output (Source, Sink): 1.5A, 1.5A Part Status: Active Number of I/O: 20 DigiKey Programmable: Not Verified |
товар відсутній |
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IMD700AQ064X128AAXUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 64-WFQFN Exposed Pad Mounting Type: Surface Mount Interface: CAN, I2C, SPI, UART/USART RAM Size: 16K x 8 Operating Temperature: -40°C ~ 115°C (TJ) Voltage - Supply: 5.5V ~ 60V Controller Series: XMC1404 Program Memory Type: FLASH (128kB) Applications: BLDC Controller Input Type: Non-Inverting Core Processor: ARM® Cortex®-M0 Supplier Device Package: PG-VQFN-64-8 Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 3 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 1.045V, 3.85V Current - Peak Output (Source, Sink): 1.5A, 1.5A Part Status: Active Number of I/O: 20 DigiKey Programmable: Not Verified |
на замовлення 1976 шт: термін постачання 21-31 дні (днів) |
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IPA65R280C6 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V Power Dissipation (Max): 32W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 440µA Supplier Device Package: PG-TO220-3-111 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V |
товар відсутній |
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BSB012N03LX3 | Infineon Technologies |
![]() Packaging: Bulk Part Status: Active |
на замовлення 3581 шт: термін постачання 21-31 дні (днів) |
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FP50R12N2T7BPSA2 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: AG-ECONO2B IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 10 µA Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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BYM300B170DN2HOSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 25A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 20 mW Current - Collector Cutoff (Max): 40 µA Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V |
на замовлення 7 шт: термін постачання 21-31 дні (днів) |
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BAT 54-02V E6327 | Infineon Technologies |
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товар відсутній |
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IGLD60R190D1SAUMA1 | Infineon Technologies |
Description: GAN HV PG-LSON-8 Packaging: Tape & Reel (TR) Package / Case: 8-LDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 960µA Supplier Device Package: PG-LSON-8-1 Part Status: Active Vgs (Max): -10V Drain to Source Voltage (Vdss): 600 V Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 400 V |
товар відсутній |
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F475R12KS4B11BPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Inverter Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: AG-ECONO2C Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 500 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V |
на замовлення 15 шт: термін постачання 21-31 дні (днів) |
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F475R12KS4BPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Inverter Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: AG-ECONO2B Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 500 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V |
на замовлення 29 шт: термін постачання 21-31 дні (днів) |
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EVALM10565DTOBO2 | Infineon Technologies |
![]() Packaging: Box Function: Motor Controller/Driver Type: Power Management Utilized IC / Part: IRMCK099 Supplied Contents: Board(s) Part Status: Obsolete |
товар відсутній |
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BSM300GB120DLCE3256HOSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 300A NTC Thermistor: No Supplier Device Package: Module Current - Collector (Ic) (Max): 625 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 2500 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 21 nF @ 25 V |
на замовлення 378 шт: термін постачання 21-31 дні (днів) |
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SPB80N10L G | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 58A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 2V @ 2mA Supplier Device Package: PG-TO263-3-2 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4540 pF @ 25 V |
товар відсутній |
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IAUA180N10S5N029AUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tj) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 90A, 10V Power Dissipation (Max): 221W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 130µA Supplier Device Package: PG-HSOF-5-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7673 pF @ 50 V |
товар відсутній |
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BB 804 SF3 E6327 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Diode Type: 1 Pair Common Cathode Operating Temperature: -55°C ~ 125°C (TJ) Capacitance @ Vr, F: 47.5pF @ 2V, 1MHz Q @ Vr, F: 200 @ 2V, 100MHz Capacitance Ratio Condition: C2/C8 Supplier Device Package: PG-SOT23 Part Status: Obsolete Voltage - Peak Reverse (Max): 18 V Capacitance Ratio: 1.71 |
товар відсутній |
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BGSA143ML10E6327XTSA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Features: DC Blocked Package / Case: 10-XFLGA Mounting Type: Surface Mount Circuit: SP4T Voltage - Supply: 42V Frequency Range: 6GHz Topology: Reflective Supplier Device Package: PG-TSLP-10-2 Part Status: Active |
на замовлення 7363 шт: термін постачання 21-31 дні (днів) |
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IPB180N06S4H1ATMA2 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 200µA Supplier Device Package: PG-TO263-7 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 21900 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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MB95F654LNPFT-G-SNE2 |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT 20KB FLASH 24TSSOP
Packaging: Tube
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 6x8/12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 24-TSSOP
Number of I/O: 20
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 20KB FLASH 24TSSOP
Packaging: Tube
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 6x8/12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 24-TSSOP
Number of I/O: 20
DigiKey Programmable: Not Verified
на замовлення 6464 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 52.02 грн |
MB95F654LNPFT-G-SNE2 |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT 20KB FLASH 24TSSOP
Packaging: Tube
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 6x8/12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 24-TSSOP
Number of I/O: 20
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 20KB FLASH 24TSSOP
Packaging: Tube
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 6x8/12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 24-TSSOP
Number of I/O: 20
DigiKey Programmable: Not Verified
товар відсутній
MB95F652LNPFT-G-SNE2 |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 24TSSOP
Packaging: Bulk
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 6x8/12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 24-TSSOP
Number of I/O: 20
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 8KB FLASH 24TSSOP
Packaging: Bulk
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 6x8/12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 24-TSSOP
Number of I/O: 20
DigiKey Programmable: Not Verified
на замовлення 9588 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 52.77 грн |
MB95F652LNPFT-G-SNE2 |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 24TSSOP
Packaging: Bulk
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 6x8/12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 24-TSSOP
Number of I/O: 20
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 8KB FLASH 24TSSOP
Packaging: Bulk
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 6x8/12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 24-TSSOP
Number of I/O: 20
DigiKey Programmable: Not Verified
товар відсутній
FS03MR12A6MA1BBPSA1 |
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Виробник: Infineon Technologies
Description: SIC 6N-CH 1200V AG-HYBRIDD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 400A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 42500pF @ 600V
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 400A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1320nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 240mA
Supplier Device Package: AG-HYBRIDD-2
Part Status: Active
Description: SIC 6N-CH 1200V AG-HYBRIDD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 400A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 42500pF @ 600V
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 400A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1320nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 240mA
Supplier Device Package: AG-HYBRIDD-2
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 155398.72 грн |
BBY53-03WE6327HTSA1 |
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Виробник: Infineon Technologies
Description: DIODE TUNING 6V 20MA SOD-323
Description: DIODE TUNING 6V 20MA SOD-323
на замовлення 61312 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2275+ | 8.96 грн |
BAT54-03WE6327 |
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Виробник: Infineon Technologies
Description: DIODE SCHOTT 30V 200MA SOD323-2
Description: DIODE SCHOTT 30V 200MA SOD323-2
товар відсутній
BBY58-03WE6327 |
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Виробник: Infineon Technologies
Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 5.5pF @ 6V, 1MHz
Capacitance Ratio Condition: C4/C6
Supplier Device Package: PG-SOD323-2-1
Part Status: Active
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 1.3
Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 5.5pF @ 6V, 1MHz
Capacitance Ratio Condition: C4/C6
Supplier Device Package: PG-SOD323-2-1
Part Status: Active
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 1.3
товар відсутній
BBY53-03WE6327 |
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Виробник: Infineon Technologies
Description: BBY53 - VARACTOR DIODE
Description: BBY53 - VARACTOR DIODE
на замовлення 2450 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2450+ | 8.96 грн |
IM67D130AXTSA2 |
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Виробник: Infineon Technologies
Description: MIC MEMS DIGITAL PDM NC -36DB
Packaging: Tape & Reel (TR)
Output Type: Digital, PDM
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Sensitivity: -36dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 67dB
Termination: Solder Pads
Direction: Noise Cancelling
Port Location: Bottom
Height (Max): 0.051" (1.30mm)
Grade: Automotive
Part Status: Active
Current - Supply: 980 µA
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 20 kHz ~ 20 kHz
Qualification: AEC-Q103
Description: MIC MEMS DIGITAL PDM NC -36DB
Packaging: Tape & Reel (TR)
Output Type: Digital, PDM
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Sensitivity: -36dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 67dB
Termination: Solder Pads
Direction: Noise Cancelling
Port Location: Bottom
Height (Max): 0.051" (1.30mm)
Grade: Automotive
Part Status: Active
Current - Supply: 980 µA
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 20 kHz ~ 20 kHz
Qualification: AEC-Q103
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1000+ | 89.86 грн |
IM67D130AXTSA2 |
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Виробник: Infineon Technologies
Description: MIC MEMS DIGITAL PDM NC -36DB
Packaging: Cut Tape (CT)
Output Type: Digital, PDM
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Sensitivity: -36dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 67dB
Termination: Solder Pads
Direction: Noise Cancelling
Port Location: Bottom
Height (Max): 0.051" (1.30mm)
Grade: Automotive
Part Status: Active
Current - Supply: 980 µA
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 20 kHz ~ 20 kHz
Qualification: AEC-Q103
Description: MIC MEMS DIGITAL PDM NC -36DB
Packaging: Cut Tape (CT)
Output Type: Digital, PDM
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Sensitivity: -36dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 67dB
Termination: Solder Pads
Direction: Noise Cancelling
Port Location: Bottom
Height (Max): 0.051" (1.30mm)
Grade: Automotive
Part Status: Active
Current - Supply: 980 µA
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 20 kHz ~ 20 kHz
Qualification: AEC-Q103
на замовлення 2321 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 159.82 грн |
10+ | 127.26 грн |
25+ | 117.52 грн |
50+ | 103.65 грн |
100+ | 97.27 грн |
250+ | 90.58 грн |
500+ | 82.03 грн |
MB95F856KPFT-G-SNE2 |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT 36KB FLASH 24TSSOP
Packaging: Tube
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 36KB (36K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 4x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V
Connectivity: I2C, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 24-TSSOP
Number of I/O: 21
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 36KB FLASH 24TSSOP
Packaging: Tube
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 36KB (36K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 4x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V
Connectivity: I2C, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 24-TSSOP
Number of I/O: 21
DigiKey Programmable: Not Verified
на замовлення 3071 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 25.63 грн |
BAS21UE6433HTMA1 |
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Виробник: Infineon Technologies
Description: DIODE ARRAY GP 200V 250MA SC74-6
Packaging: Bulk
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 250mA (DC)
Supplier Device Package: PG-SC74-6
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Description: DIODE ARRAY GP 200V 250MA SC74-6
Packaging: Bulk
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 250mA (DC)
Supplier Device Package: PG-SC74-6
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
на замовлення 20630 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2831+ | 7.66 грн |
CY7C109B-15ZXC |
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Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32TSOP I
Description: IC SRAM 1MBIT PARALLEL 32TSOP I
на замовлення 1623 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
283+ | 75.3 грн |
REFSHA35WRC2SYSTOBO1 |
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Виробник: Infineon Technologies
Description: REFERENCE DESIGN BOARD
Packaging: Bulk
Supplied Contents: Board(s)
Part Status: Active
Description: REFERENCE DESIGN BOARD
Packaging: Bulk
Supplied Contents: Board(s)
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 6242.82 грн |
BSS139IXTMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 250V 100MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 100mA, 10V
FET Feature: Depletion Mode
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 56µA
Supplier Device Package: PG-SOT23-3-5
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Description: MOSFET N-CH 250V 100MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 100mA, 10V
FET Feature: Depletion Mode
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 56µA
Supplier Device Package: PG-SOT23-3-5
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
товар відсутній
FP150R12N3T7BPSA1 |
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Виробник: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO3-3
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 12 µA
Input Capacitance (Cies) @ Vce: 30.1 nF @ 25 V
Description: LOW POWER ECONO AG-ECONO3-3
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 12 µA
Input Capacitance (Cies) @ Vce: 30.1 nF @ 25 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 22395.28 грн |
10+ | 20198.79 грн |
IFF450B12ME4PB11BPSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1200V 450A 40W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 40 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
Description: IGBT MOD 1200V 450A 40W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 40 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
товар відсутній
FZ2400R12HE4B9HDSA2 |
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Виробник: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 3 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 2.4kA
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 3560 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 13500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 3 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 2.4kA
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 3560 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 13500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
на замовлення 32 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 65919.34 грн |
CY8CTMA884LTI-13T |
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Виробник: Infineon Technologies
Description: IC TRUETOUCH CAPSENSE QFN
Packaging: Tape & Reel (TR)
Package / Case: 88-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 88-QFN (10x10)
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
Description: IC TRUETOUCH CAPSENSE QFN
Packaging: Tape & Reel (TR)
Package / Case: 88-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 88-QFN (10x10)
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2000+ | 317.81 грн |
CY8CTMA884AA-23 |
Виробник: Infineon Technologies
Description: IC TRUETOUCH CAPSENSE 100TQFP
Packaging: Bulk
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC TRUETOUCH CAPSENSE 100TQFP
Packaging: Bulk
Part Status: Obsolete
DigiKey Programmable: Not Verified
на замовлення 2056 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
24+ | 970.99 грн |
IPA60R380P6 |
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Виробник: Infineon Technologies
Description: 600V COOLMOS POWER TRANSISTOR
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 877 pF @ 100 V
Description: 600V COOLMOS POWER TRANSISTOR
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 877 pF @ 100 V
на замовлення 313 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
313+ | 79.16 грн |
CY8C24423A-24PXI |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT 4KB FLASH 28DIP
Packaging: Tube
Package / Case: 28-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 10x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 28-PDIP
Number of I/O: 24
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 4KB FLASH 28DIP
Packaging: Tube
Package / Case: 28-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 10x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 28-PDIP
Number of I/O: 24
DigiKey Programmable: Not Verified
на замовлення 99007 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
97+ | 217.15 грн |
IAUA170N10S5N031AUMA1 |
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Виробник: Infineon Technologies
Description: MOSFET_(75V 120V( PG-HSOF-5
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tj)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 85A, 10V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 110µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6405 pF @ 50 V
Description: MOSFET_(75V 120V( PG-HSOF-5
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tj)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 85A, 10V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 110µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6405 pF @ 50 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2000+ | 104.01 грн |
IPT019N08N5ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 32A/247A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 247A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 150A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 40 V
Description: MOSFET N-CH 80V 32A/247A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 247A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 150A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 40 V
на замовлення 3900 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 306.83 грн |
10+ | 247.98 грн |
100+ | 200.62 грн |
500+ | 167.35 грн |
1000+ | 143.29 грн |
6ED2230S12TXUMA1 |
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Виробник: Infineon Technologies
Description: 1200V THREE PHASE DRIVER
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width), 24 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: PG-DSO-24
Rise / Fall Time (Typ): 35ns, 20ns
Channel Type: 3-Phase
Driven Configuration: High-Side or Low-Side
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.7V, 2.3V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Active
DigiKey Programmable: Not Verified
Description: 1200V THREE PHASE DRIVER
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width), 24 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: PG-DSO-24
Rise / Fall Time (Typ): 35ns, 20ns
Channel Type: 3-Phase
Driven Configuration: High-Side or Low-Side
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.7V, 2.3V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Active
DigiKey Programmable: Not Verified
товар відсутній
6ED2230S12TXUMA1 |
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Виробник: Infineon Technologies
Description: 1200V THREE PHASE DRIVER
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width), 24 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: PG-DSO-24
Rise / Fall Time (Typ): 35ns, 20ns
Channel Type: 3-Phase
Driven Configuration: High-Side or Low-Side
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.7V, 2.3V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Active
DigiKey Programmable: Not Verified
Description: 1200V THREE PHASE DRIVER
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width), 24 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: PG-DSO-24
Rise / Fall Time (Typ): 35ns, 20ns
Channel Type: 3-Phase
Driven Configuration: High-Side or Low-Side
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.7V, 2.3V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 702 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 652.1 грн |
10+ | 567.62 грн |
25+ | 541.18 грн |
100+ | 440.98 грн |
250+ | 421.17 грн |
500+ | 384 грн |
IM323L6G2XKMA1 |
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Виробник: Infineon Technologies
Description: CIPOS TINY 600V 15A THREE-PHASE
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.043", 26.50mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 15 A
Voltage: 600 V
Description: CIPOS TINY 600V 15A THREE-PHASE
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.043", 26.50mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 15 A
Voltage: 600 V
на замовлення 235 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 530.73 грн |
15+ | 469.64 грн |
30+ | 450.14 грн |
105+ | 402.02 грн |
IPD220N06L3GATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 30A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: PG-TO252-3-311
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
Description: MOSFET N-CH 60V 30A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: PG-TO252-3-311
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
на замовлення 25056 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 57.29 грн |
10+ | 47.55 грн |
100+ | 32.89 грн |
500+ | 25.79 грн |
1000+ | 21.95 грн |
C164C18EMCBKXQMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 16BIT 64KB OTP 80MQFP
Description: IC MCU 16BIT 64KB OTP 80MQFP
товар відсутній
C161SL25MAAFXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 16BIT ROMLESS 80MQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Part Status: Obsolete
Number of I/O: 63
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT ROMLESS 80MQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Part Status: Obsolete
Number of I/O: 63
DigiKey Programmable: Not Verified
товар відсутній
C161SL25MAAFXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 16BIT ROMLESS 80MQFP
Packaging: Cut Tape (CT)
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Part Status: Obsolete
Number of I/O: 63
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT ROMLESS 80MQFP
Packaging: Cut Tape (CT)
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Part Status: Obsolete
Number of I/O: 63
DigiKey Programmable: Not Verified
на замовлення 3 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 684.52 грн |
C164CI8EMDBFXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 16BIT 64KB OTP 80MQFP
Packaging: Bulk
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: OTP
Core Processor: C166
Data Converters: A/D 8x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Number of I/O: 59
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 64KB OTP 80MQFP
Packaging: Bulk
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: OTP
Core Processor: C166
Data Converters: A/D 8x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Number of I/O: 59
DigiKey Programmable: Not Verified
на замовлення 631 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
19+ | 1164.1 грн |
C161SL25MAABXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 16BIT ROMLESS 80MQFP
Packaging: Bulk
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Number of I/O: 63
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT ROMLESS 80MQFP
Packaging: Bulk
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Number of I/O: 63
DigiKey Programmable: Not Verified
на замовлення 4096 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
70+ | 305.09 грн |
C164CI8E25MDBFXQMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 16BIT 64KB OTP 80MQFP
Packaging: Tray
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 25MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: OTP
Core Processor: C166
Data Converters: A/D 8x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Number of I/O: 59
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 64KB OTP 80MQFP
Packaging: Tray
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 25MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: OTP
Core Processor: C166
Data Converters: A/D 8x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Number of I/O: 59
DigiKey Programmable: Not Verified
товар відсутній
SAB-C164CI-LM CA+ |
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Виробник: Infineon Technologies
Description: IC MCU 16BIT ROMLESS 80MQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 4K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 8x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Number of I/O: 59
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT ROMLESS 80MQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 4K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 8x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Number of I/O: 59
DigiKey Programmable: Not Verified
товар відсутній
C164CILMCAKNUMA2 |
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Виробник: Infineon Technologies
Description: IC MCU 16BIT ROMLESS 80MQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 8x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Number of I/O: 59
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT ROMLESS 80MQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 8x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Number of I/O: 59
DigiKey Programmable: Not Verified
товар відсутній
C164CI8E25MDBKXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 16BIT 64KB OTP 80MQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 25MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: OTP
Core Processor: C166
Data Converters: A/D 8x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Number of I/O: 59
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 64KB OTP 80MQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 25MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: OTP
Core Processor: C166
Data Converters: A/D 8x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Number of I/O: 59
DigiKey Programmable: Not Verified
товар відсутній
FF900R17ME7B11BPSA1 |
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Виробник: Infineon Technologies
Description: MEDIUM POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 900A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 93.8 nF @ 25 V
Description: MEDIUM POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 900A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 93.8 nF @ 25 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 24300.32 грн |
FF225R17ME7B11BPSA1 |
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Виробник: Infineon Technologies
Description: ECONODUAL3 MODULE WITH TRENCHSTO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 225A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 22.9 nF @ 25 V
Description: ECONODUAL3 MODULE WITH TRENCHSTO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 225A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 22.9 nF @ 25 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 10065.7 грн |
FS25R12KE3GBPSA1 |
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Виробник: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2B-311
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 145 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 1.8 nF @ 25 V
Description: LOW POWER ECONO AG-ECONO2B-311
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 145 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 1.8 nF @ 25 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 7954.86 грн |
FD900R12IP4DVBOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1200V 900A 5100W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 5100 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
Description: IGBT MOD 1200V 900A 5100W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 5100 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
на замовлення 112 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 37484.04 грн |
IMD700AQ064X128AAXUMA1 |
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Виробник: Infineon Technologies
Description: CONTROLLER
Packaging: Tape & Reel (TR)
Package / Case: 64-WFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: CAN, I2C, SPI, UART/USART
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 115°C (TJ)
Voltage - Supply: 5.5V ~ 60V
Controller Series: XMC1404
Program Memory Type: FLASH (128kB)
Applications: BLDC Controller
Input Type: Non-Inverting
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-64-8
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 3
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.045V, 3.85V
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Part Status: Active
Number of I/O: 20
DigiKey Programmable: Not Verified
Description: CONTROLLER
Packaging: Tape & Reel (TR)
Package / Case: 64-WFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: CAN, I2C, SPI, UART/USART
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 115°C (TJ)
Voltage - Supply: 5.5V ~ 60V
Controller Series: XMC1404
Program Memory Type: FLASH (128kB)
Applications: BLDC Controller
Input Type: Non-Inverting
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-64-8
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 3
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.045V, 3.85V
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Part Status: Active
Number of I/O: 20
DigiKey Programmable: Not Verified
товар відсутній
IMD700AQ064X128AAXUMA1 |
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Виробник: Infineon Technologies
Description: CONTROLLER
Packaging: Cut Tape (CT)
Package / Case: 64-WFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: CAN, I2C, SPI, UART/USART
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 115°C (TJ)
Voltage - Supply: 5.5V ~ 60V
Controller Series: XMC1404
Program Memory Type: FLASH (128kB)
Applications: BLDC Controller
Input Type: Non-Inverting
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-64-8
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 3
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.045V, 3.85V
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Part Status: Active
Number of I/O: 20
DigiKey Programmable: Not Verified
Description: CONTROLLER
Packaging: Cut Tape (CT)
Package / Case: 64-WFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: CAN, I2C, SPI, UART/USART
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 115°C (TJ)
Voltage - Supply: 5.5V ~ 60V
Controller Series: XMC1404
Program Memory Type: FLASH (128kB)
Applications: BLDC Controller
Input Type: Non-Inverting
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-64-8
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 3
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.045V, 3.85V
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Part Status: Active
Number of I/O: 20
DigiKey Programmable: Not Verified
на замовлення 1976 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 538.26 грн |
10+ | 468.24 грн |
25+ | 446.49 грн |
100+ | 363.82 грн |
250+ | 347.47 грн |
500+ | 316.82 грн |
1000+ | 271.41 грн |
IPA65R280C6 |
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Виробник: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 6
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO220-3-111
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Description: POWER FIELD-EFFECT TRANSISTOR, 6
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO220-3-111
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
товар відсутній
BSB012N03LX3 |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
на замовлення 3581 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
335+ | 64.35 грн |
FP50R12N2T7BPSA2 |
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Виробник: Infineon Technologies
Description: LOW POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 10 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
Description: LOW POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 10 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 6539.09 грн |
BYM300B170DN2HOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 650V 40A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 40 µA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
Description: IGBT MOD 650V 40A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 40 µA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
на замовлення 7 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 14113.24 грн |
BAT 54-02V E6327 |
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Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 30V 200MA SC79-2
Description: DIODE SCHOTTKY 30V 200MA SC79-2
товар відсутній
IGLD60R190D1SAUMA1 |
Виробник: Infineon Technologies
Description: GAN HV PG-LSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-LDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 960µA
Supplier Device Package: PG-LSON-8-1
Part Status: Active
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 400 V
Description: GAN HV PG-LSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-LDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 960µA
Supplier Device Package: PG-LSON-8-1
Part Status: Active
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 400 V
товар відсутній
F475R12KS4B11BPSA1 |
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Виробник: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2B-211
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2C
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
Description: LOW POWER ECONO AG-ECONO2B-211
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2C
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
на замовлення 15 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 10390.62 грн |
15+ | 9371.74 грн |
F475R12KS4BPSA1 |
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Виробник: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2B-211
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
Description: LOW POWER ECONO AG-ECONO2B-211
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
на замовлення 29 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 10261.71 грн |
15+ | 9255.34 грн |
EVALM10565DTOBO2 |
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Виробник: Infineon Technologies
Description: EVAL CIPOS IRSM505-065DA2
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: IRMCK099
Supplied Contents: Board(s)
Part Status: Obsolete
Description: EVAL CIPOS IRSM505-065DA2
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: IRMCK099
Supplied Contents: Board(s)
Part Status: Obsolete
товар відсутній
BSM300GB120DLCE3256HOSA1 |
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Виробник: Infineon Technologies
Description: BSM300GB120 - INSULATED GATE BIP
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 625 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 21 nF @ 25 V
Description: BSM300GB120 - INSULATED GATE BIP
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 625 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 21 nF @ 25 V
на замовлення 378 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 15841.87 грн |
SPB80N10L G |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 58A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 2V @ 2mA
Supplier Device Package: PG-TO263-3-2
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4540 pF @ 25 V
Description: MOSFET N-CH 100V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 58A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 2V @ 2mA
Supplier Device Package: PG-TO263-3-2
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4540 pF @ 25 V
товар відсутній
IAUA180N10S5N029AUMA1 |
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Виробник: Infineon Technologies
Description: MOSFET_(75V 120V( PG-HSOF-5
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tj)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 90A, 10V
Power Dissipation (Max): 221W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 130µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7673 pF @ 50 V
Description: MOSFET_(75V 120V( PG-HSOF-5
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tj)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 90A, 10V
Power Dissipation (Max): 221W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 130µA
Supplier Device Package: PG-HSOF-5-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7673 pF @ 50 V
товар відсутній
BB 804 SF3 E6327 |
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Виробник: Infineon Technologies
Description: DIODE VAR CAP 18V 50MA SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 47.5pF @ 2V, 1MHz
Q @ Vr, F: 200 @ 2V, 100MHz
Capacitance Ratio Condition: C2/C8
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Voltage - Peak Reverse (Max): 18 V
Capacitance Ratio: 1.71
Description: DIODE VAR CAP 18V 50MA SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 47.5pF @ 2V, 1MHz
Q @ Vr, F: 200 @ 2V, 100MHz
Capacitance Ratio Condition: C2/C8
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Voltage - Peak Reverse (Max): 18 V
Capacitance Ratio: 1.71
товар відсутній
BGSA143ML10E6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC RF SWITCH SP4T 6GHZ TSLP10-2
Packaging: Cut Tape (CT)
Features: DC Blocked
Package / Case: 10-XFLGA
Mounting Type: Surface Mount
Circuit: SP4T
Voltage - Supply: 42V
Frequency Range: 6GHz
Topology: Reflective
Supplier Device Package: PG-TSLP-10-2
Part Status: Active
Description: IC RF SWITCH SP4T 6GHZ TSLP10-2
Packaging: Cut Tape (CT)
Features: DC Blocked
Package / Case: 10-XFLGA
Mounting Type: Surface Mount
Circuit: SP4T
Voltage - Supply: 42V
Frequency Range: 6GHz
Topology: Reflective
Supplier Device Package: PG-TSLP-10-2
Part Status: Active
на замовлення 7363 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 50.51 грн |
10+ | 42.98 грн |
25+ | 40.33 грн |
100+ | 30.9 грн |
250+ | 28.7 грн |
500+ | 24.42 грн |
1000+ | 19.22 грн |
2500+ | 17.42 грн |
IPB180N06S4H1ATMA2 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21900 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21900 pF @ 25 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1000+ | 132.8 грн |