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TLE4299G TLE4299G Infineon Technologies Infineon-TLE4299-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc101595f8533611f57 Description: IC REG LINEAR FIXED LDO REG
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
402+59.64 грн
Мінімальне замовлення: 402
TLE4299GV33 TLE4299GV33 Infineon Technologies Infineon-TLE4299-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc101595f8533611f57 Description: IC REG LINEAR FIXED LDO REG
на замовлення 4742 шт:
термін постачання 21-31 дні (днів)
402+57.77 грн
Мінімальне замовлення: 402
94-4305PBF Infineon Technologies Description: IC MOSFET
Packaging: Tube
товар відсутній
PEB4264-0TV1.2 Infineon Technologies Description: DUSLIC DUAL CHANNEL SUBSCRIBER L
на замовлення 4555 шт:
термін постачання 21-31 дні (днів)
PEB4264-0TV1.1GD Infineon Technologies Description: DUSLIC DUAL CHANNEL SLIC
Packaging: Bulk
на замовлення 2398 шт:
термін постачання 21-31 дні (днів)
78+270.14 грн
Мінімальне замовлення: 78
REFFRIDGEC101T6EDTOBO1 REFFRIDGEC101T6EDTOBO1 Infineon Technologies Infineon-UG-2021-22_REF_Fridge_C101T_6ED-UserManual-v01_00-EN.pdf?fileId=5546d46279cccfdb0179fa5f7b862090 Description: REFERENCE BOARD
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: 6EDL04I06PT, IKD04N60RC2, IMC101T-T038
Supplied Contents: Board(s), Cable(s)
Primary Attributes: Compressor
Embedded: No
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+15369.22 грн
S25FL032P0XMFV011M S25FL032P0XMFV011M Infineon Technologies Description: IC FLASH 32MBIT SPI/QUAD 8SOIC
Packaging: Tray
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
товар відсутній
S25FL032P0XMFV013M S25FL032P0XMFV013M Infineon Technologies Description: IC FLASH 32MBIT SPI/QUAD 8SOIC
Packaging: Tray
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
товар відсутній
S25FL032P0XNFI000M S25FL032P0XNFI000M Infineon Technologies Description: IC FLASH 32MBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
товар відсутній
S25FL032P0XNFI001M S25FL032P0XNFI001M Infineon Technologies Description: IC FLASH 32MBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
товар відсутній
S25FL032P0XNFI003M S25FL032P0XNFI003M Infineon Technologies Description: IC FLASH 32MBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
товар відсутній
S25FL032P0XNFI010M S25FL032P0XNFI010M Infineon Technologies Description: IC FLASH 32MBIT SPI/QUAD 8USON
Packaging: Tray
Package / Case: 8-UDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-USON (5x6)
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
товар відсутній
TLV4961-1TBXALA1 TLV4961-1TBXALA1 Infineon Technologies Infineon-Infineon-TLV4961-1TAB_Hall_Switch-DS-v01_00-DS-v01_00-EN.pdf?fileId=5546d4624e765da5014ede3a726e0b89 Description: MAGNETIC SWITCH HALL EFFECT
Packaging: Bulk
Features: Temperature Compensated
Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Through Hole
Function: Latch, Bipolar Switch
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 26V
Technology: Hall Effect
Sensing Range: 3.5mT Trip, -3.5mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: TO-92S
Test Condition: 25°C
Part Status: Active
товар відсутній
TLI49611LHALA1 Infineon Technologies TLI4961-1L,M.pdf Description: MAGNETIC SWITCH IC HALL EFF 3SSO
на замовлення 10362 шт:
термін постачання 21-31 дні (днів)
804+28.64 грн
Мінімальне замовлення: 804
MB95F652ENPF-G-SNE2 MB95F652ENPF-G-SNE2 Infineon Technologies Prod_Selector_Guide_11-25-15.pdf Description: IC MCU 8BIT 8KB FLASH 24SOP
Packaging: Bulk
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 6x8/12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 24-SOP
Number of I/O: 21
DigiKey Programmable: Not Verified
на замовлення 4118 шт:
термін постачання 21-31 дні (днів)
6+51.12 грн
Мінімальне замовлення: 6
BSM75GP60BOSA1 Infineon Technologies Description: IGBT MOD 600V 100A 310W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 310 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
товар відсутній
IPD60R180C7ATMA1 IPD60R180C7ATMA1 Infineon Technologies Infineon-IPD60R180C7-DS-v02_00-EN.pdf?fileId=5546d4624fb7fef2014fd622c0914c61 Description: MOSFET N-CH 600V 13A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.3A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 260µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
товар відсутній
SP001606042 SP001606042 Infineon Technologies Infineon-IPA60R180P7-DS-v02_01-EN.pdf?fileId=5546d4625a888733015a8e6e2c2d5011 Description: IPA60R180P7XKSA1 - 600V COOLMOS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: PG-TO220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
товар відсутній
IPA60R280CFDD7 IPA60R280CFDD7 Infineon Technologies Infineon-IPA60R280CFD7-DS-v02_01-EN.pdf?fileId=5546d4625e763904015ea37c9ff931a6 Description: IPA60R280 - 600V COOLMOS N-CHANN
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.6A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 180µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 807 pF @ 400 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
222+94.93 грн
Мінімальне замовлення: 222
IPA60R230P6 Infineon Technologies INFN-S-A0001301517-1.pdf?t.download=true&u=5oefqw Description: IPA60R230 - 600V COOLMOS N-CHANN
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.8A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 6.4A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 530µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 100 V
товар відсутній
S72XS256RE0AHBH20 Infineon Technologies download Description: IC FLASH RAM 256MBIT PAR 133FBGA
Packaging: Tray
Package / Case: 133-VFBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit (FLASH), 256Mbit (DDR DRAM)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH, DRAM
Clock Frequency: 108 MHz
Memory Format: FLASH, RAM
Supplier Device Package: 133-FBGA (8x8)
Memory Interface: Parallel
DigiKey Programmable: Not Verified
товар відсутній
AUIRB24427STR AUIRB24427STR Infineon Technologies auirb24427s.pdf?fileId=5546d462533600a4015355a8894c135e Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-8-9
Rise / Fall Time (Typ): 33ns, 33ns (Max)
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 6A, 6A
DigiKey Programmable: Not Verified
товар відсутній
EVAL2101HBLLCTOBO1 EVAL2101HBLLCTOBO1 Infineon Technologies Description: EVAL BRD
Packaging: Bulk
Voltage - Output: 12V
Voltage - Input: 350V ~ 425V
Current - Output: 16.7A
Board Type: Fully Populated
Utilized IC / Part: 2ED2101S06F, 2ED24427N01F
Supplied Contents: Board(s)
Main Purpose: DC/DC Converter
Outputs and Type: 1, Isolated
Part Status: Active
Power - Output: 200 W
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+21929.87 грн
SIDC03D60F6X7SA1 Infineon Technologies SIDC03D60F6_ed2.1_9-3-10.pdf Description: DIODE SWITCHING 600V WAFER
товар відсутній
BGSA147ML10E6327XTSA1 BGSA147ML10E6327XTSA1 Infineon Technologies Infineon-BGSA147ML10-DataSheet-v01_00-EN.pdf?fileId=5546d46277921c320177ba20358645ab Description: IC RF SW SP4T 7.125GHZ TSLP10
Packaging: Tape & Reel (TR)
Package / Case: 10-XFQFN
Mounting Type: Surface Mount
Circuit: SP4T
RF Type: General Purpose
Voltage - Supply: 45V
Frequency Range: 400MHz ~ 7.125GHz
Topology: Reflective
Supplier Device Package: PG-TSLP-10-3
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
7500+18.45 грн
Мінімальне замовлення: 7500
IRFH7110TRPBF IRFH7110TRPBF Infineon Technologies IRFH7110PbF.pdf Description: MOSFET N-CH 100V 11A/58A 8PQFN
Packaging: Bulk
Package / Case: 8-TQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 25 V
на замовлення 1940 шт:
термін постачання 21-31 дні (днів)
555+41.2 грн
Мінімальне замовлення: 555
KP226N3022 KP226N3022 Infineon Technologies Description: AUTOMOTIVE PRESSURE SENSOR
на замовлення 11173 шт:
термін постачання 21-31 дні (днів)
111+188.33 грн
Мінімальне замовлення: 111
KP266N3022 KP266N3022 Infineon Technologies Description: AUTOMOTIVE PRESSURE SENSOR
на замовлення 1297 шт:
термін постачання 21-31 дні (днів)
BSC146N10LS5ATMA1 BSC146N10LS5ATMA1 Infineon Technologies Infineon-BSC146N10LS5-DataSheet-v02_02-EN.pdf?fileId=5546d4626b2d8e69016b4c4f80f313ea Description: MOSFET N-CH 100V 44A TDSON-8-6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 22A, 10V
Power Dissipation (Max): 2.5W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 23µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
на замовлення 12907 шт:
термін постачання 21-31 дні (днів)
4+97.67 грн
10+ 83.1 грн
25+ 75.07 грн
100+ 61.64 грн
250+ 54.09 грн
500+ 47.8 грн
1000+ 37.12 грн
Мінімальне замовлення: 4
BSC0402NSATMA1 BSC0402NSATMA1 Infineon Technologies Infineon-BSC0402NS-DataSheet-v02_01-EN.pdf?fileId=5546d462700c0ae6017015d4682a2212 Description: MOSFET N-CH 150V 80A TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 40A, 10
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 107µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 75 V
товар відсутній
BSC0403NSATMA1 BSC0403NSATMA1 Infineon Technologies Infineon-BSC0403NS-DataSheet-v02_01-EN.pdf?fileId=5546d462700c0ae6017015dda00a2215 Description: 150V, N-CH MOSFET, LOGIC LEVEL,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 35A, 10
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 91µA
Supplier Device Package: PG-TDSON-8-7
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 75 V
на замовлення 273 шт:
термін постачання 21-31 дні (днів)
2+195.34 грн
10+ 155.99 грн
100+ 124.15 грн
Мінімальне замовлення: 2
BSC050N0LSG BSC050N0LSG Infineon Technologies INFNS27220-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
BSC0588NSIATMA1 BSC0588NSIATMA1 Infineon Technologies Description: BSC0588- N-CHANNEL POWER MOSFET
Packaging: Bulk
на замовлення 215000 шт:
термін постачання 21-31 дні (днів)
167+130 грн
Мінімальне замовлення: 167
BSC0503NSIATMA1 BSC0503NSIATMA1 Infineon Technologies Infineon-BSC0503NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014f026ba60b3c73 Description: MOSFET N-CH 30V 22A/88A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 88A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
товар відсутній
DT61N2516KOFHPSA1 Infineon Technologies TT61N.pdf Description: SCR MODULE VDRM 1200V 120A
товар відсутній
BAS16B5003 BAS16B5003 Infineon Technologies INFNS13366-1.pdf?t.download=true&u=5oefqw Description: DIODE GP 80V 250MA SOT23-3-11
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SOT23-3-11
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
на замовлення 1073000 шт:
термін постачання 21-31 дні (днів)
13172+1.43 грн
Мінімальне замовлення: 13172
BFP720FH6327XTSA1 BFP720FH6327XTSA1 Infineon Technologies INFNS27662-1.pdf?t.download=true&u=5oefqw Description: RF TRANS NPN 4.7V 45GHZ 4TSFP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10.5dB ~ 28dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 13mA, 3V
Frequency - Transition: 45GHz
Noise Figure (dB Typ @ f): 0.4dB ~ 1dB @ 150MHz ~ 10GHz
Supplier Device Package: 4-TSFP
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+14.45 грн
Мінімальне замовлення: 3000
SIDC38D60C6X1SA3 Infineon Technologies SIDC38D60C6.pdf Description: DIODE GP 600V 150A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 150A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 150 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товар відсутній
SIDC38D60C8X1SA1 Infineon Technologies Infineon-SIDC38D60C8_L4030M-DS-v01_02-en.pdf?fileId=db3a30433c8a9179013c908a3f14599f Description: DIODE GEN PURP 600V 150A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 150A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 150 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товар відсутній
AUIRF6215STRL AUIRF6215STRL Infineon Technologies auirf6215s.pdf?fileId=5546d462533600a4015355acf0a713ca Description: MOSFET P-CH 150V 13A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.6A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
товар відсутній
IFS100B12N3E4B31BDLA1 Infineon Technologies Description: INTELLIGENT POWER MODULE (IPM)
Packaging: Bulk
Part Status: Active
товар відсутній
KITA2GTC375LITETOBO1 KITA2GTC375LITETOBO1 Infineon Technologies Infineon-AURIX_TC375_lite_Kit-UserManual-v02_20-EN.pdf?fileId=8ac78c8c7cdc391c017ce5193b575bd6&redirId=242105 Description: AURIX TC375 LITE EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: TriCore™
Utilized IC / Part: TC375
Platform: AURIX TC375 Lite
Part Status: Active
на замовлення 72 шт:
термін постачання 21-31 дні (днів)
1+7264.17 грн
IRLC034NB Infineon Technologies Description: MOSFET 55V 28A DIE
товар відсутній
IGW30N60H3 IGW30N60H3 Infineon Technologies INFNS30182-1.pdf?t.download=true&u=5oefqw Description: IGW30N60 - DISCRETE IGBT WITHOUT
товар відсутній
BSC0704LSATMA1 BSC0704LSATMA1 Infineon Technologies Infineon-BSC0704LS-DataSheet-v02_02-EN.pdf?fileId=5546d462700c0ae6017086fbbc2b1d32 Description: MOSFET N-CH 60V 11A/47A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 47A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 24A, 10V
Power Dissipation (Max): 2.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 14µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+24.49 грн
Мінімальне замовлення: 5000
BSC0702LSATMA1 BSC0702LSATMA1 Infineon Technologies Infineon-BSC0702LS-DataSheet-v02_03-EN.pdf?fileId=5546d4626fc1ce0b016ff0909c6f4eda Description: MOSFET N-CH 60V 100A SUPERSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 49µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 30 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
5000+53.76 грн
10000+ 50.05 грн
Мінімальне замовлення: 5000
BSC0702LSATMA1 BSC0702LSATMA1 Infineon Technologies Infineon-BSC0702LS-DataSheet-v02_03-EN.pdf?fileId=5546d4626fc1ce0b016ff0909c6f4eda Description: MOSFET N-CH 60V 100A SUPERSO8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 49µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 30 V
на замовлення 17482 шт:
термін постачання 21-31 дні (днів)
3+123.61 грн
10+ 99.05 грн
100+ 78.86 грн
500+ 62.62 грн
1000+ 53.14 грн
2000+ 50.48 грн
Мінімальне замовлення: 3
IPW60R024CFD7XKSA1 IPW60R024CFD7XKSA1 Infineon Technologies Infineon-IPW60R024CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626afcd350016b1d9ab78f1314 Description: MOSFET N-CH 650V 77A TO247-3-41
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 42.4A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.12mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7268 pF @ 400 V
на замовлення 195 шт:
термін постачання 21-31 дні (днів)
1+1042.32 грн
30+ 812.99 грн
120+ 765.17 грн
IPB65R090CFD7ATMA1 IPB65R090CFD7ATMA1 Infineon Technologies Infineon-IPB65R090CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627572d8fd01758ef432df49ce Description: HIGH POWER_NEW
товар відсутній
IPB26CN10NGATMA1 IPB26CN10NGATMA1 Infineon Technologies INFNS30236-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 100V 35A D2PAK
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
TLI4971A025T5E0001XUMA1 TLI4971A025T5E0001XUMA1 Infineon Technologies Infineon-TLI4971_25_50_75_120-DataSheet-v01_20-EN.pdf?fileId=5546d462700c0ae6017034d731621b09 Description: SENSOR CURRENT HALL 25A 8TISON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Sensitivity: 48mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Accuracy: ±3.45%
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±2.25%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 25A
Grade: Automotive
Part Status: Active
Number of Channels: 1
Qualification: AEC-Q100
товар відсутній
PBL38201/1QSA Infineon Technologies Description: SLIC
на замовлення 2475 шт:
термін постачання 21-31 дні (днів)
FZ825R33HE4DBPSA1 FZ825R33HE4DBPSA1 Infineon Technologies Infineon-FZ825R33HE4D-DataSheet-v01_10-EN.pdf?fileId=5546d46278d64ffd0178f97d4dd50584 Description: HV B SINGLE SWITCH POWER MODULES
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 825A
NTC Thermistor: No
Supplier Device Package: AG-IHVB130-3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 825 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 2400000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 93.5 nF @ 25 V
товар відсутній
IPL60R2K1C6SATMA1 IPL60R2K1C6SATMA1 Infineon Technologies DS_IPL60R2K1C6S_2_0.pdf?fileId=5546d4614755559a01475e3d01ca041b Description: MOSFET N-CH 600V 2.3A THIN-PAK
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 760mA, 10V
Power Dissipation (Max): 21.6W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-TSON-8-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
на замовлення 176342 шт:
термін постачання 21-31 дні (днів)
919+23.25 грн
Мінімальне замовлення: 919
IPLK60R1K5PFD7ATMA1 IPLK60R1K5PFD7ATMA1 Infineon Technologies Infineon-IPLK60R1K5PFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626fc1ce0b016fd787ece33d8f Description: MOSFET N-CH 600V 3.8A THIN-PAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 700mA, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 40µA
Supplier Device Package: PG-TDSON-8-52
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 169 pF @ 400 V
товар відсутній
STL51005N Infineon Technologies stl51004-5x_010601.pdf?t.download=true&u=5oefqw Description: LOW POWER 1300 NM FP LASER
на замовлення 70 шт:
термін постачання 21-31 дні (днів)
BGS14GA14E6327XTSA1 BGS14GA14E6327XTSA1 Infineon Technologies BGS14GA14.pdf Description: IC RF SWITCH SP4T 6GHZ ATSLP14-5
Packaging: Bulk
Package / Case: 14-UFQFN Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP4T
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3V
Insertion Loss: 0.65dB
Frequency Range: 100MHz ~ 6GHz
Test Frequency: 6GHz
Isolation: 27dB
Supplier Device Package: ATSLP-14-5
Part Status: Obsolete
на замовлення 4850945 шт:
термін постачання 21-31 дні (днів)
1443+14.99 грн
Мінімальне замовлення: 1443
BGS14GA14E6327XTSA1 BGS14GA14E6327XTSA1 Infineon Technologies BGS14GA14.pdf Description: IC RF SWITCH SP4T 6GHZ ATSLP14-5
Packaging: Tape & Reel (TR)
Package / Case: 14-UFQFN Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP4T
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3V
Insertion Loss: 0.65dB
Frequency Range: 100MHz ~ 6GHz
Test Frequency: 6GHz
Isolation: 27dB
Supplier Device Package: ATSLP-14-5
Part Status: Obsolete
товар відсутній
BGS14GA14E6327XTSA1 BGS14GA14E6327XTSA1 Infineon Technologies BGS14GA14.pdf Description: IC RF SWITCH SP4T 6GHZ ATSLP14-5
Packaging: Cut Tape (CT)
Package / Case: 14-UFQFN Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP4T
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3V
Insertion Loss: 0.65dB
Frequency Range: 100MHz ~ 6GHz
Test Frequency: 6GHz
Isolation: 27dB
Supplier Device Package: ATSLP-14-5
Part Status: Obsolete
товар відсутній
AUIRS2181STR AUIRS2181STR Infineon Technologies IRSDS19254-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
товар відсутній
TLE4299G Infineon-TLE4299-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc101595f8533611f57
TLE4299G
Виробник: Infineon Technologies
Description: IC REG LINEAR FIXED LDO REG
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
402+59.64 грн
Мінімальне замовлення: 402
TLE4299GV33 Infineon-TLE4299-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc101595f8533611f57
TLE4299GV33
Виробник: Infineon Technologies
Description: IC REG LINEAR FIXED LDO REG
на замовлення 4742 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
402+57.77 грн
Мінімальне замовлення: 402
94-4305PBF
Виробник: Infineon Technologies
Description: IC MOSFET
Packaging: Tube
товар відсутній
PEB4264-0TV1.2
Виробник: Infineon Technologies
Description: DUSLIC DUAL CHANNEL SUBSCRIBER L
на замовлення 4555 шт:
термін постачання 21-31 дні (днів)
PEB4264-0TV1.1GD
Виробник: Infineon Technologies
Description: DUSLIC DUAL CHANNEL SLIC
Packaging: Bulk
на замовлення 2398 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
78+270.14 грн
Мінімальне замовлення: 78
REFFRIDGEC101T6EDTOBO1 Infineon-UG-2021-22_REF_Fridge_C101T_6ED-UserManual-v01_00-EN.pdf?fileId=5546d46279cccfdb0179fa5f7b862090
REFFRIDGEC101T6EDTOBO1
Виробник: Infineon Technologies
Description: REFERENCE BOARD
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: 6EDL04I06PT, IKD04N60RC2, IMC101T-T038
Supplied Contents: Board(s), Cable(s)
Primary Attributes: Compressor
Embedded: No
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+15369.22 грн
S25FL032P0XMFV011M
S25FL032P0XMFV011M
Виробник: Infineon Technologies
Description: IC FLASH 32MBIT SPI/QUAD 8SOIC
Packaging: Tray
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
товар відсутній
S25FL032P0XMFV013M
S25FL032P0XMFV013M
Виробник: Infineon Technologies
Description: IC FLASH 32MBIT SPI/QUAD 8SOIC
Packaging: Tray
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
товар відсутній
S25FL032P0XNFI000M
S25FL032P0XNFI000M
Виробник: Infineon Technologies
Description: IC FLASH 32MBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
товар відсутній
S25FL032P0XNFI001M
S25FL032P0XNFI001M
Виробник: Infineon Technologies
Description: IC FLASH 32MBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
товар відсутній
S25FL032P0XNFI003M
S25FL032P0XNFI003M
Виробник: Infineon Technologies
Description: IC FLASH 32MBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
товар відсутній
S25FL032P0XNFI010M
S25FL032P0XNFI010M
Виробник: Infineon Technologies
Description: IC FLASH 32MBIT SPI/QUAD 8USON
Packaging: Tray
Package / Case: 8-UDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-USON (5x6)
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
товар відсутній
TLV4961-1TBXALA1 Infineon-Infineon-TLV4961-1TAB_Hall_Switch-DS-v01_00-DS-v01_00-EN.pdf?fileId=5546d4624e765da5014ede3a726e0b89
TLV4961-1TBXALA1
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH HALL EFFECT
Packaging: Bulk
Features: Temperature Compensated
Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Through Hole
Function: Latch, Bipolar Switch
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 26V
Technology: Hall Effect
Sensing Range: 3.5mT Trip, -3.5mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: TO-92S
Test Condition: 25°C
Part Status: Active
товар відсутній
TLI49611LHALA1 TLI4961-1L,M.pdf
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH IC HALL EFF 3SSO
на замовлення 10362 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
804+28.64 грн
Мінімальне замовлення: 804
MB95F652ENPF-G-SNE2 Prod_Selector_Guide_11-25-15.pdf
MB95F652ENPF-G-SNE2
Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 24SOP
Packaging: Bulk
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 6x8/12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 24-SOP
Number of I/O: 21
DigiKey Programmable: Not Verified
на замовлення 4118 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6+51.12 грн
Мінімальне замовлення: 6
BSM75GP60BOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 600V 100A 310W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 310 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
товар відсутній
IPD60R180C7ATMA1 Infineon-IPD60R180C7-DS-v02_00-EN.pdf?fileId=5546d4624fb7fef2014fd622c0914c61
IPD60R180C7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 13A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.3A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 260µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
товар відсутній
SP001606042 Infineon-IPA60R180P7-DS-v02_01-EN.pdf?fileId=5546d4625a888733015a8e6e2c2d5011
SP001606042
Виробник: Infineon Technologies
Description: IPA60R180P7XKSA1 - 600V COOLMOS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: PG-TO220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
товар відсутній
IPA60R280CFDD7 Infineon-IPA60R280CFD7-DS-v02_01-EN.pdf?fileId=5546d4625e763904015ea37c9ff931a6
IPA60R280CFDD7
Виробник: Infineon Technologies
Description: IPA60R280 - 600V COOLMOS N-CHANN
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.6A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 180µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 807 pF @ 400 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
222+94.93 грн
Мінімальне замовлення: 222
IPA60R230P6 INFN-S-A0001301517-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: IPA60R230 - 600V COOLMOS N-CHANN
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.8A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 6.4A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 530µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 100 V
товар відсутній
S72XS256RE0AHBH20 download
Виробник: Infineon Technologies
Description: IC FLASH RAM 256MBIT PAR 133FBGA
Packaging: Tray
Package / Case: 133-VFBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit (FLASH), 256Mbit (DDR DRAM)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH, DRAM
Clock Frequency: 108 MHz
Memory Format: FLASH, RAM
Supplier Device Package: 133-FBGA (8x8)
Memory Interface: Parallel
DigiKey Programmable: Not Verified
товар відсутній
AUIRB24427STR auirb24427s.pdf?fileId=5546d462533600a4015355a8894c135e
AUIRB24427STR
Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-8-9
Rise / Fall Time (Typ): 33ns, 33ns (Max)
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 6A, 6A
DigiKey Programmable: Not Verified
товар відсутній
EVAL2101HBLLCTOBO1
EVAL2101HBLLCTOBO1
Виробник: Infineon Technologies
Description: EVAL BRD
Packaging: Bulk
Voltage - Output: 12V
Voltage - Input: 350V ~ 425V
Current - Output: 16.7A
Board Type: Fully Populated
Utilized IC / Part: 2ED2101S06F, 2ED24427N01F
Supplied Contents: Board(s)
Main Purpose: DC/DC Converter
Outputs and Type: 1, Isolated
Part Status: Active
Power - Output: 200 W
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+21929.87 грн
SIDC03D60F6X7SA1 SIDC03D60F6_ed2.1_9-3-10.pdf
Виробник: Infineon Technologies
Description: DIODE SWITCHING 600V WAFER
товар відсутній
BGSA147ML10E6327XTSA1 Infineon-BGSA147ML10-DataSheet-v01_00-EN.pdf?fileId=5546d46277921c320177ba20358645ab
BGSA147ML10E6327XTSA1
Виробник: Infineon Technologies
Description: IC RF SW SP4T 7.125GHZ TSLP10
Packaging: Tape & Reel (TR)
Package / Case: 10-XFQFN
Mounting Type: Surface Mount
Circuit: SP4T
RF Type: General Purpose
Voltage - Supply: 45V
Frequency Range: 400MHz ~ 7.125GHz
Topology: Reflective
Supplier Device Package: PG-TSLP-10-3
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
7500+18.45 грн
Мінімальне замовлення: 7500
IRFH7110TRPBF IRFH7110PbF.pdf
IRFH7110TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 11A/58A 8PQFN
Packaging: Bulk
Package / Case: 8-TQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 25 V
на замовлення 1940 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
555+41.2 грн
Мінімальне замовлення: 555
KP226N3022
KP226N3022
Виробник: Infineon Technologies
Description: AUTOMOTIVE PRESSURE SENSOR
на замовлення 11173 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
111+188.33 грн
Мінімальне замовлення: 111
KP266N3022
KP266N3022
Виробник: Infineon Technologies
Description: AUTOMOTIVE PRESSURE SENSOR
на замовлення 1297 шт:
термін постачання 21-31 дні (днів)
BSC146N10LS5ATMA1 Infineon-BSC146N10LS5-DataSheet-v02_02-EN.pdf?fileId=5546d4626b2d8e69016b4c4f80f313ea
BSC146N10LS5ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 44A TDSON-8-6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 22A, 10V
Power Dissipation (Max): 2.5W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 23µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
на замовлення 12907 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+97.67 грн
10+ 83.1 грн
25+ 75.07 грн
100+ 61.64 грн
250+ 54.09 грн
500+ 47.8 грн
1000+ 37.12 грн
Мінімальне замовлення: 4
BSC0402NSATMA1 Infineon-BSC0402NS-DataSheet-v02_01-EN.pdf?fileId=5546d462700c0ae6017015d4682a2212
BSC0402NSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 80A TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 40A, 10
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 107µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 75 V
товар відсутній
BSC0403NSATMA1 Infineon-BSC0403NS-DataSheet-v02_01-EN.pdf?fileId=5546d462700c0ae6017015dda00a2215
BSC0403NSATMA1
Виробник: Infineon Technologies
Description: 150V, N-CH MOSFET, LOGIC LEVEL,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 35A, 10
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 91µA
Supplier Device Package: PG-TDSON-8-7
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 75 V
на замовлення 273 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+195.34 грн
10+ 155.99 грн
100+ 124.15 грн
Мінімальне замовлення: 2
BSC050N0LSG INFNS27220-1.pdf?t.download=true&u=5oefqw
BSC050N0LSG
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
BSC0588NSIATMA1
BSC0588NSIATMA1
Виробник: Infineon Technologies
Description: BSC0588- N-CHANNEL POWER MOSFET
Packaging: Bulk
на замовлення 215000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
167+130 грн
Мінімальне замовлення: 167
BSC0503NSIATMA1 Infineon-BSC0503NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014f026ba60b3c73
BSC0503NSIATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 22A/88A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 88A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
товар відсутній
DT61N2516KOFHPSA1 TT61N.pdf
Виробник: Infineon Technologies
Description: SCR MODULE VDRM 1200V 120A
товар відсутній
BAS16B5003 INFNS13366-1.pdf?t.download=true&u=5oefqw
BAS16B5003
Виробник: Infineon Technologies
Description: DIODE GP 80V 250MA SOT23-3-11
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SOT23-3-11
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
на замовлення 1073000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
13172+1.43 грн
Мінімальне замовлення: 13172
BFP720FH6327XTSA1 INFNS27662-1.pdf?t.download=true&u=5oefqw
BFP720FH6327XTSA1
Виробник: Infineon Technologies
Description: RF TRANS NPN 4.7V 45GHZ 4TSFP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10.5dB ~ 28dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 13mA, 3V
Frequency - Transition: 45GHz
Noise Figure (dB Typ @ f): 0.4dB ~ 1dB @ 150MHz ~ 10GHz
Supplier Device Package: 4-TSFP
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+14.45 грн
Мінімальне замовлення: 3000
SIDC38D60C6X1SA3 SIDC38D60C6.pdf
Виробник: Infineon Technologies
Description: DIODE GP 600V 150A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 150A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 150 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товар відсутній
SIDC38D60C8X1SA1 Infineon-SIDC38D60C8_L4030M-DS-v01_02-en.pdf?fileId=db3a30433c8a9179013c908a3f14599f
Виробник: Infineon Technologies
Description: DIODE GEN PURP 600V 150A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 150A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 150 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товар відсутній
AUIRF6215STRL auirf6215s.pdf?fileId=5546d462533600a4015355acf0a713ca
AUIRF6215STRL
Виробник: Infineon Technologies
Description: MOSFET P-CH 150V 13A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.6A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
товар відсутній
IFS100B12N3E4B31BDLA1
Виробник: Infineon Technologies
Description: INTELLIGENT POWER MODULE (IPM)
Packaging: Bulk
Part Status: Active
товар відсутній
KITA2GTC375LITETOBO1 Infineon-AURIX_TC375_lite_Kit-UserManual-v02_20-EN.pdf?fileId=8ac78c8c7cdc391c017ce5193b575bd6&redirId=242105
KITA2GTC375LITETOBO1
Виробник: Infineon Technologies
Description: AURIX TC375 LITE EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: TriCore™
Utilized IC / Part: TC375
Platform: AURIX TC375 Lite
Part Status: Active
на замовлення 72 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+7264.17 грн
IRLC034NB
Виробник: Infineon Technologies
Description: MOSFET 55V 28A DIE
товар відсутній
IGW30N60H3 INFNS30182-1.pdf?t.download=true&u=5oefqw
IGW30N60H3
Виробник: Infineon Technologies
Description: IGW30N60 - DISCRETE IGBT WITHOUT
товар відсутній
BSC0704LSATMA1 Infineon-BSC0704LS-DataSheet-v02_02-EN.pdf?fileId=5546d462700c0ae6017086fbbc2b1d32
BSC0704LSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 11A/47A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 47A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 24A, 10V
Power Dissipation (Max): 2.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 14µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5000+24.49 грн
Мінімальне замовлення: 5000
BSC0702LSATMA1 Infineon-BSC0702LS-DataSheet-v02_03-EN.pdf?fileId=5546d4626fc1ce0b016ff0909c6f4eda
BSC0702LSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 100A SUPERSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 49µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 30 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5000+53.76 грн
10000+ 50.05 грн
Мінімальне замовлення: 5000
BSC0702LSATMA1 Infineon-BSC0702LS-DataSheet-v02_03-EN.pdf?fileId=5546d4626fc1ce0b016ff0909c6f4eda
BSC0702LSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 100A SUPERSO8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 49µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 30 V
на замовлення 17482 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+123.61 грн
10+ 99.05 грн
100+ 78.86 грн
500+ 62.62 грн
1000+ 53.14 грн
2000+ 50.48 грн
Мінімальне замовлення: 3
IPW60R024CFD7XKSA1 Infineon-IPW60R024CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626afcd350016b1d9ab78f1314
IPW60R024CFD7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 77A TO247-3-41
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 42.4A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.12mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7268 pF @ 400 V
на замовлення 195 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1042.32 грн
30+ 812.99 грн
120+ 765.17 грн
IPB65R090CFD7ATMA1 Infineon-IPB65R090CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627572d8fd01758ef432df49ce
IPB65R090CFD7ATMA1
Виробник: Infineon Technologies
Description: HIGH POWER_NEW
товар відсутній
IPB26CN10NGATMA1 INFNS30236-1.pdf?t.download=true&u=5oefqw
IPB26CN10NGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 35A D2PAK
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
TLI4971A025T5E0001XUMA1 Infineon-TLI4971_25_50_75_120-DataSheet-v01_20-EN.pdf?fileId=5546d462700c0ae6017034d731621b09
TLI4971A025T5E0001XUMA1
Виробник: Infineon Technologies
Description: SENSOR CURRENT HALL 25A 8TISON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Sensitivity: 48mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Accuracy: ±3.45%
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±2.25%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 25A
Grade: Automotive
Part Status: Active
Number of Channels: 1
Qualification: AEC-Q100
товар відсутній
PBL38201/1QSA
Виробник: Infineon Technologies
Description: SLIC
на замовлення 2475 шт:
термін постачання 21-31 дні (днів)
FZ825R33HE4DBPSA1 Infineon-FZ825R33HE4D-DataSheet-v01_10-EN.pdf?fileId=5546d46278d64ffd0178f97d4dd50584
FZ825R33HE4DBPSA1
Виробник: Infineon Technologies
Description: HV B SINGLE SWITCH POWER MODULES
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 825A
NTC Thermistor: No
Supplier Device Package: AG-IHVB130-3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 825 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 2400000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 93.5 nF @ 25 V
товар відсутній
IPL60R2K1C6SATMA1 DS_IPL60R2K1C6S_2_0.pdf?fileId=5546d4614755559a01475e3d01ca041b
IPL60R2K1C6SATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 2.3A THIN-PAK
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 760mA, 10V
Power Dissipation (Max): 21.6W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-TSON-8-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
на замовлення 176342 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
919+23.25 грн
Мінімальне замовлення: 919
IPLK60R1K5PFD7ATMA1 Infineon-IPLK60R1K5PFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626fc1ce0b016fd787ece33d8f
IPLK60R1K5PFD7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 3.8A THIN-PAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 700mA, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 40µA
Supplier Device Package: PG-TDSON-8-52
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 169 pF @ 400 V
товар відсутній
STL51005N stl51004-5x_010601.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: LOW POWER 1300 NM FP LASER
на замовлення 70 шт:
термін постачання 21-31 дні (днів)
BGS14GA14E6327XTSA1 BGS14GA14.pdf
BGS14GA14E6327XTSA1
Виробник: Infineon Technologies
Description: IC RF SWITCH SP4T 6GHZ ATSLP14-5
Packaging: Bulk
Package / Case: 14-UFQFN Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP4T
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3V
Insertion Loss: 0.65dB
Frequency Range: 100MHz ~ 6GHz
Test Frequency: 6GHz
Isolation: 27dB
Supplier Device Package: ATSLP-14-5
Part Status: Obsolete
на замовлення 4850945 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1443+14.99 грн
Мінімальне замовлення: 1443
BGS14GA14E6327XTSA1 BGS14GA14.pdf
BGS14GA14E6327XTSA1
Виробник: Infineon Technologies
Description: IC RF SWITCH SP4T 6GHZ ATSLP14-5
Packaging: Tape & Reel (TR)
Package / Case: 14-UFQFN Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP4T
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3V
Insertion Loss: 0.65dB
Frequency Range: 100MHz ~ 6GHz
Test Frequency: 6GHz
Isolation: 27dB
Supplier Device Package: ATSLP-14-5
Part Status: Obsolete
товар відсутній
BGS14GA14E6327XTSA1 BGS14GA14.pdf
BGS14GA14E6327XTSA1
Виробник: Infineon Technologies
Description: IC RF SWITCH SP4T 6GHZ ATSLP14-5
Packaging: Cut Tape (CT)
Package / Case: 14-UFQFN Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP4T
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3V
Insertion Loss: 0.65dB
Frequency Range: 100MHz ~ 6GHz
Test Frequency: 6GHz
Isolation: 27dB
Supplier Device Package: ATSLP-14-5
Part Status: Obsolete
товар відсутній
AUIRS2181STR IRSDS19254-1.pdf?t.download=true&u=5oefqw
AUIRS2181STR
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
товар відсутній
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