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AUIRF540ZSTRL AUIRF540ZSTRL Infineon Technologies Infineon-AUIRF540Z-DS-v01_02-EN.pdf?fileId=5546d462533600a4015355ace0a513c5 Description: MOSFET N-CH 100V 36A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 22A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
товар відсутній
TLE92672QXXUMA2 Infineon Technologies Description: TLE9267 - SYSTEM BASIS CHIP
Packaging: Bulk
Part Status: Active
товар відсутній
TLE92682QXXUMA2 Infineon Technologies Description: TLE9268-2QX - SYSTEM BASIS CHIP
Packaging: Bulk
Part Status: Active
товар відсутній
TLE92603QXXUMA1 Infineon Technologies Infineon-TLE9260QX-DS-v01_01-EN.pdf?fileId=5546d4625a888733015a89910ca33eed Description: MID-RANGE SYSTEM BASIS CHIP
на замовлення 3057 шт:
термін постачання 21-31 дні (днів)
TLE9273QXV33XUMA1 TLE9273QXV33XUMA1 Infineon Technologies Description: HIGH-END SYSTEM BASIS CHIP
на замовлення 4842 шт:
термін постачання 21-31 дні (днів)
TLE82642EXUMA2 Infineon Technologies TLE8264-2E.pdf Description: IC SYSTEM BASIS CHIP DSO-36
Packaging: Bulk
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
на замовлення 129000 шт:
термін постачання 21-31 дні (днів)
78+295.3 грн
Мінімальне замовлення: 78
IPW60R199CP Infineon Technologies INFNS30150-1.pdf?t.download=true&u=5oefqw Description: 16A, 600V, 0.199OHM, N-CHANNEL M
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 9.9A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 660µA
Supplier Device Package: PG-TO247-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 100 V
товар відсутній
IRLR024NTRLPBF IRLR024NTRLPBF Infineon Technologies irlr024npbf.pdf?fileId=5546d462533600a4015356694f7f265d Description: MOSFET N-CH 55V 17A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V
товар відсутній
TLE63893GV50XUMA2 TLE63893GV50XUMA2 Infineon Technologies Infineon-TLE6389-DS-v02_10-EN.pdf?fileId=5546d46258fc0bc1015969d25b5241c7 Description: IC REG CTRLR BUCK 14DSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 360kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 5V ~ 60V
Supplier Device Package: PG-DSO-14-1
Synchronous Rectifier: Yes
Control Features: Current Limit, Enable, Reset
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: Yes
Number of Outputs: 1
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
TLE63893GV50XUMA2 TLE63893GV50XUMA2 Infineon Technologies Infineon-TLE6389-DS-v02_10-EN.pdf?fileId=5546d46258fc0bc1015969d25b5241c7 Description: IC REG CTRLR BUCK 14DSOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 360kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 5V ~ 60V
Supplier Device Package: PG-DSO-14-1
Synchronous Rectifier: Yes
Control Features: Current Limit, Enable, Reset
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: Yes
Number of Outputs: 1
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
TLE63892GV50XUMA2 TLE63892GV50XUMA2 Infineon Technologies Infineon-TLE6389-DS-v02_10-EN.pdf?fileId=5546d46258fc0bc1015969d25b5241c7 Description: IC REG CTRLR BUCK 14DSOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 360kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 5V ~ 60V
Supplier Device Package: PG-DSO-14-1
Synchronous Rectifier: Yes
Control Features: Current Limit, Enable, Reset
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: Yes
Part Status: Last Time Buy
Number of Outputs: 1
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
2ED28073J06FXUMA1 2ED28073J06FXUMA1 Infineon Technologies Infineon-2ED28073J06F-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b7017181f76e671a4d Description: LEVEL SHIFT JUNCTION ISO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Part Status: Active
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: CMOS, TTL
High Side Voltage - Max (Bootstrap): 600 V
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.2 V
DigiKey Programmable: Not Verified
Rise / Fall Time (Typ): 1.5µs, 225ns
Current - Peak Output (Source, Sink): 20mA, 80mA
товар відсутній
IPP60R165CP IPP60R165CP Infineon Technologies INFNS15864-1.pdf?t.download=true&u=5oefqw Description: 21A, 600V, 0.165OHM, N-CHANNEL M
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 790µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V
товар відсутній
BAS4005WH6327XTSA1 BAS4005WH6327XTSA1 Infineon Technologies INFNS19700-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOT 40V 120MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 63000 шт:
термін постачання 21-31 дні (днів)
3000+7.02 грн
6000+ 6.48 грн
9000+ 5.83 грн
30000+ 5.39 грн
Мінімальне замовлення: 3000
BAT62E6327HTSA1 BAT62E6327HTSA1 Infineon Technologies Infineon-BAT62-DataSheet-v01_00-EN.pdf?fileId=5546d4627a0b0c7b017a1997a91e3eb2 Description: DIODE SCHOTTKY 40V 100MW SOT143
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
3000+7.33 грн
Мінімальне замовлення: 3000
PSB2170HV1.1DRY PSB2170HV1.1DRY Infineon Technologies Description: ACOUSTIC ECHO CANCELLER ACE
Packaging: Bulk
на замовлення 504 шт:
термін постачання 21-31 дні (днів)
17+1288.42 грн
Мінімальне замовлення: 17
PSB2170HV1.1 PSB2170HV1.1 Infineon Technologies Description: ACOUSTIC ECHO CANCELLER ACE
Packaging: Bulk
на замовлення 588 шт:
термін постачання 21-31 дні (днів)
16+1432.19 грн
Мінімальне замовлення: 16
PSB2170HV2.1 PSB2170HV2.1 Infineon Technologies Description: ACOUSTIC ECHO CANCELLER ACE
Packaging: Bulk
на замовлення 476 шт:
термін постачання 21-31 дні (днів)
16+1432.19 грн
Мінімальне замовлення: 16
1ED3125MU12FXUMA1 1ED3125MU12FXUMA1 Infineon Technologies Infineon-1ED312xMU12F-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177cf830baf768b Description: DIGITAL ISO 3KV 1CH GT DVR DSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 14A
Technology: Magnetic Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 3000Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 30ns, 30ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Pulse Width Distortion (Max): 5ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+76.4 грн
Мінімальне замовлення: 2500
1ED3125MU12FXUMA1 1ED3125MU12FXUMA1 Infineon Technologies Infineon-1ED312xMU12F-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177cf830baf768b Description: DIGITAL ISO 3KV 1CH GT DVR DSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 14A
Technology: Magnetic Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 3000Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 30ns, 30ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Pulse Width Distortion (Max): 5ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
на замовлення 4514 шт:
термін постачання 21-31 дні (днів)
2+167.11 грн
10+ 144.38 грн
25+ 136.26 грн
100+ 108.94 грн
250+ 102.29 грн
500+ 89.5 грн
1000+ 72.94 грн
Мінімальне замовлення: 2
1ED3124MU12FXUMA1 1ED3124MU12FXUMA1 Infineon Technologies Infineon-1ED312xMU12F-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177cf830baf768b Description: DIGITAL ISO 3KV 1CH GT DVR DSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 14A
Technology: Magnetic Coupling
Current - Output High, Low: 6A, 6A
Voltage - Isolation: 3000Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 30ns, 30ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Pulse Width Distortion (Max): 5ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
товар відсутній
1ED3124MU12FXUMA1 1ED3124MU12FXUMA1 Infineon Technologies Infineon-1ED312xMU12F-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177cf830baf768b Description: DIGITAL ISO 3KV 1CH GT DVR DSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 14A
Technology: Magnetic Coupling
Current - Output High, Low: 6A, 6A
Voltage - Isolation: 3000Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 30ns, 30ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Pulse Width Distortion (Max): 5ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
на замовлення 1472 шт:
термін постачання 21-31 дні (днів)
2+181.6 грн
10+ 156.95 грн
25+ 148.1 грн
100+ 118.41 грн
250+ 111.18 грн
500+ 97.29 грн
1000+ 79.29 грн
Мінімальне замовлення: 2
DEMOBOARDTLE7182EMTOBO1 DEMOBOARDTLE7182EMTOBO1 Infineon Technologies Description: EVAL BOARD FOR TLE7182EM
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: TLE7182EM
Supplied Contents: Board(s)
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+55488.52 грн
TLE7182EM TLE7182EM Infineon Technologies Infineon-TLE7182EM-DS-v01_01-en.pdf?fileId=db3a30432f5008fe012f5442920c3996 Description: TLE7182 - GATE DRIVER
Packaging: Bulk
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 7V ~ 34V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 55 V
Supplier Device Package: PG-SSOP-24-4
Rise / Fall Time (Typ): 250ns, 200ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 4
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 1V, 2V
Part Status: Active
товар відсутній
IPL65R099C7AUMA1 IPL65R099C7AUMA1 Infineon Technologies INFN-S-A0003614916-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 650V 21A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 5.9A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+213.02 грн
Мінімальне замовлення: 3000
AIKB50N65DH5ATMA1 AIKB50N65DH5ATMA1 Infineon Technologies Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4 Description: DISCRETE SWITCHES
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
на замовлення 3980 шт:
термін постачання 21-31 дні (днів)
1+444.09 грн
10+ 366.29 грн
100+ 305.22 грн
500+ 252.74 грн
FS400R07A1E3 Infineon Technologies INFN-S-A0006155526-1.pdf?t.download=true&u=5oefqw Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 400A
NTC Thermistor: Yes
Supplier Device Package: AG-HYBRID1-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
товар відсутній
FS400R07A1E3H5BPSA1 FS400R07A1E3H5BPSA1 Infineon Technologies FS400R07A1E3_H5_rev3.0_2014-12-02.pdf Description: IGBT MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 400A
NTC Thermistor: Yes
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 750 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
товар відсутній
FS400R07A1E3BOMA1 FS400R07A1E3BOMA1 Infineon Technologies Infineon-FS400R07A1E3-DS-v03_03-EN.pdf?fileId=db3a304325afd6e001261d0930996007 Description: MODULE IGBT HYBRID PK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 400A
NTC Thermistor: Yes
Supplier Device Package: AG-HYBRID1-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
товар відсутній
BAR8602ELSE6327XTSA1 Infineon Technologies Description: RF PIN DIODE > ANTENNA SWITCH
Packaging: Bulk
Part Status: Active
на замовлення 105000 шт:
термін постачання 21-31 дні (днів)
3463+6.4 грн
Мінімальне замовлення: 3463
BAT6404E6433HTMA1 BAT6404E6433HTMA1 Infineon Technologies INFNS11551-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOTT 40V 250MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
10000+6.25 грн
Мінімальне замовлення: 10000
BAS4004E6433HTMA1 BAS4004E6433HTMA1 Infineon Technologies INFNS19700-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOTT 40V 120MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
10000+5.49 грн
Мінімальне замовлення: 10000
IRLR3636TRLPBF IRLR3636TRLPBF Infineon Technologies IRSDS10828-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 60V 50A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 50A, 10V
Power Dissipation (Max): 143W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3779 pF @ 50 V
товар відсутній
IRFR5410TRLPBF IRFR5410TRLPBF Infineon Technologies irfr5410pbf.pdf?fileId=5546d462533600a4015356356f622107 Description: MOSFET P-CH 100V 13A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 205mOhm @ 7.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
товар відсутній
BCR 149T E6327 BCR 149T E6327 Infineon Technologies BCR149.pdf Description: TRANS PREBIAS NPN 250MW SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SC75-3D
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 47 kOhms
товар відсутній
AUIRF7316QTR AUIRF7316QTR Infineon Technologies INFN-S-A0002298726-1.pdf?t.download=true&u=5oefqw Description: MOSFET 2P-CH 30V 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Not For New Designs
товар відсутній
AUIRF7316QTR AUIRF7316QTR Infineon Technologies INFN-S-A0002298726-1.pdf?t.download=true&u=5oefqw Description: MOSFET 2P-CH 30V 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Not For New Designs
на замовлення 298 шт:
термін постачання 21-31 дні (днів)
2+224.33 грн
10+ 181.49 грн
100+ 146.82 грн
Мінімальне замовлення: 2
CY7C199CN-15ZXC CY7C199CN-15ZXC Infineon Technologies CY7C199CN.pdf Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Tray
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
на замовлення 3122 шт:
термін постачання 21-31 дні (днів)
437+48.61 грн
Мінімальне замовлення: 437
CY7C199-15ZC CY7C199-15ZC Infineon Technologies CY7C199.pdf Description: IC SRAM 256KBIT 15NS 28TSOP
Packaging: Bag
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
на замовлення 2958 шт:
термін постачання 21-31 дні (днів)
249+85.24 грн
Мінімальне замовлення: 249
CY7C199CL-15ZXC CY7C199CL-15ZXC Infineon Technologies CY7C199C%20RevB.pdf Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Bag
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
на замовлення 676 шт:
термін постачання 21-31 дні (днів)
360+58.47 грн
Мінімальне замовлення: 360
IPA030N10NF2SXKSA1 IPA030N10NF2SXKSA1 Infineon Technologies Infineon-IPA030N10NF2S-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0179176bf1c41165 Description: TRENCH >=100V PG-TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 169µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 50 V
на замовлення 18 шт:
термін постачання 21-31 дні (днів)
1+325.06 грн
IAUZ40N08S5N100ATMA1 IAUZ40N08S5N100ATMA1 Infineon Technologies Infineon-IAUZ40N08S5N100-DataSheet-v01_00-EN.pdf?fileId=5546d4626f1cf1c5016f1e6c94a801de Description: MOSFET N-CH 75V 80A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 27µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1591 pF @ 40 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+37.6 грн
Мінімальне замовлення: 5000
IKB15N60TATMA1 IKB15N60TATMA1 Infineon Technologies Infineon-IKB15N60T-DS-v02_08-EN.pdf?fileId=db3a304412b407950112b4287d223e0a Description: IGBT TRENCH FS 600V 30A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/188ns
Switching Energy: 570µJ
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 130 W
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+78.9 грн
Мінімальне замовлення: 1000
TLE88812TNAKSA1 TLE88812TNAKSA1 Infineon Technologies Infineon-TLE8881-2-DataSheet-v01_00-EN.pdf?fileId=5546d4626cb27db2016d5d74fb3a0492 Description: ALTERNATOR_IC
Packaging: Tube
Package / Case: TO-220-5
Voltage - Output: 12V
Mounting Type: Through Hole
Number of Outputs: 1
Voltage - Input: 6V ~ 18V
Operating Temperature: -40°C ~ 175°C (TJ)
Supplier Device Package: PG-TO220-5-12
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 398 шт:
термін постачання 21-31 дні (днів)
1+878.26 грн
10+ 777.18 грн
25+ 744.92 грн
100+ 615.97 грн
1EDU20I12SVXUMA1 1EDU20I12SVXUMA1 Infineon Technologies Infineon-1EDS20I12SV-DS-v01_00-EN.pdf?fileId=5546d46145f1f3a40145faf0aa200fc1 Description: IC IGBT GATE DRIVER 36DSOP
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Part Status: Active
Number of Channels: 1
товар відсутній
1EDU20I12SVXUMA1 1EDU20I12SVXUMA1 Infineon Technologies Infineon-1EDS20I12SV-DS-v01_00-EN.pdf?fileId=5546d46145f1f3a40145faf0aa200fc1 Description: IC IGBT GATE DRIVER 36DSOP
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Part Status: Active
Number of Channels: 1
товар відсутній
F4100R12KS4BOSA1 F4100R12KS4BOSA1 Infineon Technologies Infineon-F4_100R12KS4-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b4327b185851 Description: IGBT MOD 1200V 130A 660W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 660 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 6.8 nF @ 25 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
1+16081.9 грн
10+ 14504.46 грн
SLB9665TT20FW561XUMA1 Infineon Technologies Description: OPTIGA EMBEDDED SECURITY TRUSTED
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
SLB9665VQ20FW560XUMA2 SLB9665VQ20FW560XUMA2 Infineon Technologies SLB9665xx2.0.pdf Description: SECURITY IC'S/AUTHENTICATION IC'
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LPC
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Program Memory Type: NVM (7.04kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 16-Bit
Supplier Device Package: PG-VQFN-32-13
Part Status: Not For New Designs
Number of I/O: 1
DigiKey Programmable: Not Verified
товар відсутній
IPD50N06S2L13ATMA2 IPD50N06S2L13ATMA2 Infineon Technologies Infineon-IPD50N06S2L_13-DS-v01_00-en.pdf?fileId=db3a304412b407950112b433e8e55e1a Description: MOSFET N-CH 55V 50A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 12.7mOhm @ 34A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+48.82 грн
Мінімальне замовлення: 2500
IPB110P06LMATMA1 IPB110P06LMATMA1 Infineon Technologies Infineon-IPB110P06LM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a03e2d06000ae Description: MOSFET P-CH 60V 100A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 5.55mA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 281 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 30 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+181.71 грн
Мінімальне замовлення: 1000
IPB110P06LMATMA1 IPB110P06LMATMA1 Infineon Technologies Infineon-IPB110P06LM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a03e2d06000ae Description: MOSFET P-CH 60V 100A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 5.55mA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 281 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 30 V
на замовлення 1379 шт:
термін постачання 21-31 дні (днів)
1+351.76 грн
10+ 284.14 грн
100+ 229.9 грн
500+ 191.78 грн
AUIRFR9024NTRL AUIRFR9024NTRL Infineon Technologies INFN-S-A0002298863-1.pdf?t.download=true&u=5oefqw Description: MOSFET P-CH 55V 11A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 6.6A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
товар відсутній
CY8CMBR3150-LQXIT Infineon Technologies Description: CAPSENSE EXPRESS
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
BSZ042N04NS Infineon Technologies Description: N-CHANNEL POWER MOSFET
товар відсутній
BC847BE6433 BC847BE6433 Infineon Technologies INFNS14907-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 45V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
на замовлення 34790 шт:
термін постачання 21-31 дні (днів)
8689+2.09 грн
Мінімальне замовлення: 8689
TLS850F2TAV50ATMA1 TLS850F2TAV50ATMA1 Infineon Technologies Infineon-TLS850F2TA%20V50-DataSheet-v01_00-EN.pdf?fileId=5546d46266a498f50166e8fa53582ac5 Description: IC REG LINEAR 5V 500MA TO263-7-1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-7-1
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Power Fail
Part Status: Active
PSRR: 59dB (100Hz)
Voltage Dropout (Max): 0.175V @ 250mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 82 µA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
1000+125.26 грн
2000+ 114.59 грн
Мінімальне замовлення: 1000
IPI65R310CFDXKSA1700 IPI65R310CFDXKSA1700 Infineon Technologies Infineon-IPX65R310CFD-DS-v02_03-en[1].pdf?fileId=db3a30432f91014f012f9caff105741c Description: IPI65R310 - 650V AND 700V COOLMO
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
336+68.55 грн
Мінімальне замовлення: 336
IPI120N04S302AKSA1 IPI120N04S302AKSA1 Infineon Technologies Infineon-IPP_B_I120N04S3_02-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304412b407950112b42ba1cd4583&ack=t Description: MOSFET N-CH 40V 120A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 230µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14300 pF @ 25 V
на замовлення 50600 шт:
термін постачання 21-31 дні (днів)
94+227.7 грн
Мінімальне замовлення: 94
IPP120N04S3-02 IPP120N04S3-02 Infineon Technologies INFNS10669-1.pdf?t.download=true&u=5oefqw Description: PFET, 120A I(D), 40V, 0.0023OHM,
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 230µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14300 pF @ 25 V
на замовлення 30607 шт:
термін постачання 21-31 дні (днів)
94+231.11 грн
Мінімальне замовлення: 94
AUIRF540ZSTRL Infineon-AUIRF540Z-DS-v01_02-EN.pdf?fileId=5546d462533600a4015355ace0a513c5
AUIRF540ZSTRL
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 36A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 22A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
товар відсутній
TLE92672QXXUMA2
Виробник: Infineon Technologies
Description: TLE9267 - SYSTEM BASIS CHIP
Packaging: Bulk
Part Status: Active
товар відсутній
TLE92682QXXUMA2
Виробник: Infineon Technologies
Description: TLE9268-2QX - SYSTEM BASIS CHIP
Packaging: Bulk
Part Status: Active
товар відсутній
TLE92603QXXUMA1 Infineon-TLE9260QX-DS-v01_01-EN.pdf?fileId=5546d4625a888733015a89910ca33eed
Виробник: Infineon Technologies
Description: MID-RANGE SYSTEM BASIS CHIP
на замовлення 3057 шт:
термін постачання 21-31 дні (днів)
TLE9273QXV33XUMA1
TLE9273QXV33XUMA1
Виробник: Infineon Technologies
Description: HIGH-END SYSTEM BASIS CHIP
на замовлення 4842 шт:
термін постачання 21-31 дні (днів)
TLE82642EXUMA2 TLE8264-2E.pdf
Виробник: Infineon Technologies
Description: IC SYSTEM BASIS CHIP DSO-36
Packaging: Bulk
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
на замовлення 129000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
78+295.3 грн
Мінімальне замовлення: 78
IPW60R199CP INFNS30150-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: 16A, 600V, 0.199OHM, N-CHANNEL M
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 9.9A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 660µA
Supplier Device Package: PG-TO247-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 100 V
товар відсутній
IRLR024NTRLPBF irlr024npbf.pdf?fileId=5546d462533600a4015356694f7f265d
IRLR024NTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 17A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V
товар відсутній
TLE63893GV50XUMA2 Infineon-TLE6389-DS-v02_10-EN.pdf?fileId=5546d46258fc0bc1015969d25b5241c7
TLE63893GV50XUMA2
Виробник: Infineon Technologies
Description: IC REG CTRLR BUCK 14DSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 360kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 5V ~ 60V
Supplier Device Package: PG-DSO-14-1
Synchronous Rectifier: Yes
Control Features: Current Limit, Enable, Reset
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: Yes
Number of Outputs: 1
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
TLE63893GV50XUMA2 Infineon-TLE6389-DS-v02_10-EN.pdf?fileId=5546d46258fc0bc1015969d25b5241c7
TLE63893GV50XUMA2
Виробник: Infineon Technologies
Description: IC REG CTRLR BUCK 14DSOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 360kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 5V ~ 60V
Supplier Device Package: PG-DSO-14-1
Synchronous Rectifier: Yes
Control Features: Current Limit, Enable, Reset
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: Yes
Number of Outputs: 1
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
TLE63892GV50XUMA2 Infineon-TLE6389-DS-v02_10-EN.pdf?fileId=5546d46258fc0bc1015969d25b5241c7
TLE63892GV50XUMA2
Виробник: Infineon Technologies
Description: IC REG CTRLR BUCK 14DSOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 360kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 5V ~ 60V
Supplier Device Package: PG-DSO-14-1
Synchronous Rectifier: Yes
Control Features: Current Limit, Enable, Reset
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: Yes
Part Status: Last Time Buy
Number of Outputs: 1
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
2ED28073J06FXUMA1 Infineon-2ED28073J06F-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b7017181f76e671a4d
2ED28073J06FXUMA1
Виробник: Infineon Technologies
Description: LEVEL SHIFT JUNCTION ISO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Part Status: Active
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: CMOS, TTL
High Side Voltage - Max (Bootstrap): 600 V
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.2 V
DigiKey Programmable: Not Verified
Rise / Fall Time (Typ): 1.5µs, 225ns
Current - Peak Output (Source, Sink): 20mA, 80mA
товар відсутній
IPP60R165CP INFNS15864-1.pdf?t.download=true&u=5oefqw
IPP60R165CP
Виробник: Infineon Technologies
Description: 21A, 600V, 0.165OHM, N-CHANNEL M
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 790µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V
товар відсутній
BAS4005WH6327XTSA1 INFNS19700-1.pdf?t.download=true&u=5oefqw
BAS4005WH6327XTSA1
Виробник: Infineon Technologies
Description: DIODE ARR SCHOT 40V 120MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 63000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+7.02 грн
6000+ 6.48 грн
9000+ 5.83 грн
30000+ 5.39 грн
Мінімальне замовлення: 3000
BAT62E6327HTSA1 Infineon-BAT62-DataSheet-v01_00-EN.pdf?fileId=5546d4627a0b0c7b017a1997a91e3eb2
BAT62E6327HTSA1
Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 40V 100MW SOT143
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+7.33 грн
Мінімальне замовлення: 3000
PSB2170HV1.1DRY
PSB2170HV1.1DRY
Виробник: Infineon Technologies
Description: ACOUSTIC ECHO CANCELLER ACE
Packaging: Bulk
на замовлення 504 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
17+1288.42 грн
Мінімальне замовлення: 17
PSB2170HV1.1
PSB2170HV1.1
Виробник: Infineon Technologies
Description: ACOUSTIC ECHO CANCELLER ACE
Packaging: Bulk
на замовлення 588 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
16+1432.19 грн
Мінімальне замовлення: 16
PSB2170HV2.1
PSB2170HV2.1
Виробник: Infineon Technologies
Description: ACOUSTIC ECHO CANCELLER ACE
Packaging: Bulk
на замовлення 476 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
16+1432.19 грн
Мінімальне замовлення: 16
1ED3125MU12FXUMA1 Infineon-1ED312xMU12F-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177cf830baf768b
1ED3125MU12FXUMA1
Виробник: Infineon Technologies
Description: DIGITAL ISO 3KV 1CH GT DVR DSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 14A
Technology: Magnetic Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 3000Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 30ns, 30ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Pulse Width Distortion (Max): 5ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+76.4 грн
Мінімальне замовлення: 2500
1ED3125MU12FXUMA1 Infineon-1ED312xMU12F-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177cf830baf768b
1ED3125MU12FXUMA1
Виробник: Infineon Technologies
Description: DIGITAL ISO 3KV 1CH GT DVR DSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 14A
Technology: Magnetic Coupling
Current - Output High, Low: 4A, 4A
Voltage - Isolation: 3000Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 30ns, 30ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Pulse Width Distortion (Max): 5ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
на замовлення 4514 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+167.11 грн
10+ 144.38 грн
25+ 136.26 грн
100+ 108.94 грн
250+ 102.29 грн
500+ 89.5 грн
1000+ 72.94 грн
Мінімальне замовлення: 2
1ED3124MU12FXUMA1 Infineon-1ED312xMU12F-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177cf830baf768b
1ED3124MU12FXUMA1
Виробник: Infineon Technologies
Description: DIGITAL ISO 3KV 1CH GT DVR DSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 14A
Technology: Magnetic Coupling
Current - Output High, Low: 6A, 6A
Voltage - Isolation: 3000Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 30ns, 30ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Pulse Width Distortion (Max): 5ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
товар відсутній
1ED3124MU12FXUMA1 Infineon-1ED312xMU12F-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177cf830baf768b
1ED3124MU12FXUMA1
Виробник: Infineon Technologies
Description: DIGITAL ISO 3KV 1CH GT DVR DSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 14A
Technology: Magnetic Coupling
Current - Output High, Low: 6A, 6A
Voltage - Isolation: 3000Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 30ns, 30ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Pulse Width Distortion (Max): 5ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 10V ~ 35V
на замовлення 1472 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+181.6 грн
10+ 156.95 грн
25+ 148.1 грн
100+ 118.41 грн
250+ 111.18 грн
500+ 97.29 грн
1000+ 79.29 грн
Мінімальне замовлення: 2
DEMOBOARDTLE7182EMTOBO1
DEMOBOARDTLE7182EMTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR TLE7182EM
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: TLE7182EM
Supplied Contents: Board(s)
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+55488.52 грн
TLE7182EM Infineon-TLE7182EM-DS-v01_01-en.pdf?fileId=db3a30432f5008fe012f5442920c3996
TLE7182EM
Виробник: Infineon Technologies
Description: TLE7182 - GATE DRIVER
Packaging: Bulk
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 7V ~ 34V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 55 V
Supplier Device Package: PG-SSOP-24-4
Rise / Fall Time (Typ): 250ns, 200ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 4
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 1V, 2V
Part Status: Active
товар відсутній
IPL65R099C7AUMA1 INFN-S-A0003614916-1.pdf?t.download=true&u=5oefqw
IPL65R099C7AUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 21A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 5.9A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+213.02 грн
Мінімальне замовлення: 3000
AIKB50N65DH5ATMA1 Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4
AIKB50N65DH5ATMA1
Виробник: Infineon Technologies
Description: DISCRETE SWITCHES
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
на замовлення 3980 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+444.09 грн
10+ 366.29 грн
100+ 305.22 грн
500+ 252.74 грн
FS400R07A1E3 INFN-S-A0006155526-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 400A
NTC Thermistor: Yes
Supplier Device Package: AG-HYBRID1-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
товар відсутній
FS400R07A1E3H5BPSA1 FS400R07A1E3_H5_rev3.0_2014-12-02.pdf
FS400R07A1E3H5BPSA1
Виробник: Infineon Technologies
Description: IGBT MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 400A
NTC Thermistor: Yes
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 750 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
товар відсутній
FS400R07A1E3BOMA1 Infineon-FS400R07A1E3-DS-v03_03-EN.pdf?fileId=db3a304325afd6e001261d0930996007
FS400R07A1E3BOMA1
Виробник: Infineon Technologies
Description: MODULE IGBT HYBRID PK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 400A
NTC Thermistor: Yes
Supplier Device Package: AG-HYBRID1-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
товар відсутній
BAR8602ELSE6327XTSA1
Виробник: Infineon Technologies
Description: RF PIN DIODE > ANTENNA SWITCH
Packaging: Bulk
Part Status: Active
на замовлення 105000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3463+6.4 грн
Мінімальне замовлення: 3463
BAT6404E6433HTMA1 INFNS11551-1.pdf?t.download=true&u=5oefqw
BAT6404E6433HTMA1
Виробник: Infineon Technologies
Description: DIODE ARR SCHOTT 40V 250MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10000+6.25 грн
Мінімальне замовлення: 10000
BAS4004E6433HTMA1 INFNS19700-1.pdf?t.download=true&u=5oefqw
BAS4004E6433HTMA1
Виробник: Infineon Technologies
Description: DIODE ARR SCHOTT 40V 120MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10000+5.49 грн
Мінімальне замовлення: 10000
IRLR3636TRLPBF IRSDS10828-1.pdf?t.download=true&u=5oefqw
IRLR3636TRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 50A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 50A, 10V
Power Dissipation (Max): 143W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3779 pF @ 50 V
товар відсутній
IRFR5410TRLPBF irfr5410pbf.pdf?fileId=5546d462533600a4015356356f622107
IRFR5410TRLPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 100V 13A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 205mOhm @ 7.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
товар відсутній
BCR 149T E6327 BCR149.pdf
BCR 149T E6327
Виробник: Infineon Technologies
Description: TRANS PREBIAS NPN 250MW SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SC75-3D
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 47 kOhms
товар відсутній
AUIRF7316QTR INFN-S-A0002298726-1.pdf?t.download=true&u=5oefqw
AUIRF7316QTR
Виробник: Infineon Technologies
Description: MOSFET 2P-CH 30V 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Not For New Designs
товар відсутній
AUIRF7316QTR INFN-S-A0002298726-1.pdf?t.download=true&u=5oefqw
AUIRF7316QTR
Виробник: Infineon Technologies
Description: MOSFET 2P-CH 30V 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Not For New Designs
на замовлення 298 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+224.33 грн
10+ 181.49 грн
100+ 146.82 грн
Мінімальне замовлення: 2
CY7C199CN-15ZXC CY7C199CN.pdf
CY7C199CN-15ZXC
Виробник: Infineon Technologies
Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Tray
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
на замовлення 3122 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
437+48.61 грн
Мінімальне замовлення: 437
CY7C199-15ZC CY7C199.pdf
CY7C199-15ZC
Виробник: Infineon Technologies
Description: IC SRAM 256KBIT 15NS 28TSOP
Packaging: Bag
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
на замовлення 2958 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
249+85.24 грн
Мінімальне замовлення: 249
CY7C199CL-15ZXC CY7C199C%20RevB.pdf
CY7C199CL-15ZXC
Виробник: Infineon Technologies
Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Bag
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
на замовлення 676 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
360+58.47 грн
Мінімальне замовлення: 360
IPA030N10NF2SXKSA1 Infineon-IPA030N10NF2S-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0179176bf1c41165
IPA030N10NF2SXKSA1
Виробник: Infineon Technologies
Description: TRENCH >=100V PG-TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 169µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 50 V
на замовлення 18 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+325.06 грн
IAUZ40N08S5N100ATMA1 Infineon-IAUZ40N08S5N100-DataSheet-v01_00-EN.pdf?fileId=5546d4626f1cf1c5016f1e6c94a801de
IAUZ40N08S5N100ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 80A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 27µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1591 pF @ 40 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5000+37.6 грн
Мінімальне замовлення: 5000
IKB15N60TATMA1 Infineon-IKB15N60T-DS-v02_08-EN.pdf?fileId=db3a304412b407950112b4287d223e0a
IKB15N60TATMA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 600V 30A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/188ns
Switching Energy: 570µJ
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 130 W
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1000+78.9 грн
Мінімальне замовлення: 1000
TLE88812TNAKSA1 Infineon-TLE8881-2-DataSheet-v01_00-EN.pdf?fileId=5546d4626cb27db2016d5d74fb3a0492
TLE88812TNAKSA1
Виробник: Infineon Technologies
Description: ALTERNATOR_IC
Packaging: Tube
Package / Case: TO-220-5
Voltage - Output: 12V
Mounting Type: Through Hole
Number of Outputs: 1
Voltage - Input: 6V ~ 18V
Operating Temperature: -40°C ~ 175°C (TJ)
Supplier Device Package: PG-TO220-5-12
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 398 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+878.26 грн
10+ 777.18 грн
25+ 744.92 грн
100+ 615.97 грн
1EDU20I12SVXUMA1 Infineon-1EDS20I12SV-DS-v01_00-EN.pdf?fileId=5546d46145f1f3a40145faf0aa200fc1
1EDU20I12SVXUMA1
Виробник: Infineon Technologies
Description: IC IGBT GATE DRIVER 36DSOP
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Part Status: Active
Number of Channels: 1
товар відсутній
1EDU20I12SVXUMA1 Infineon-1EDS20I12SV-DS-v01_00-EN.pdf?fileId=5546d46145f1f3a40145faf0aa200fc1
1EDU20I12SVXUMA1
Виробник: Infineon Technologies
Description: IC IGBT GATE DRIVER 36DSOP
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Part Status: Active
Number of Channels: 1
товар відсутній
F4100R12KS4BOSA1 Infineon-F4_100R12KS4-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b4327b185851
F4100R12KS4BOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 130A 660W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 660 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 6.8 nF @ 25 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+16081.9 грн
10+ 14504.46 грн
SLB9665TT20FW561XUMA1
Виробник: Infineon Technologies
Description: OPTIGA EMBEDDED SECURITY TRUSTED
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
SLB9665VQ20FW560XUMA2 SLB9665xx2.0.pdf
SLB9665VQ20FW560XUMA2
Виробник: Infineon Technologies
Description: SECURITY IC'S/AUTHENTICATION IC'
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LPC
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Program Memory Type: NVM (7.04kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 16-Bit
Supplier Device Package: PG-VQFN-32-13
Part Status: Not For New Designs
Number of I/O: 1
DigiKey Programmable: Not Verified
товар відсутній
IPD50N06S2L13ATMA2 Infineon-IPD50N06S2L_13-DS-v01_00-en.pdf?fileId=db3a304412b407950112b433e8e55e1a
IPD50N06S2L13ATMA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 50A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 12.7mOhm @ 34A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+48.82 грн
Мінімальне замовлення: 2500
IPB110P06LMATMA1 Infineon-IPB110P06LM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a03e2d06000ae
IPB110P06LMATMA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 60V 100A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 5.55mA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 281 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 30 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1000+181.71 грн
Мінімальне замовлення: 1000
IPB110P06LMATMA1 Infineon-IPB110P06LM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a03e2d06000ae
IPB110P06LMATMA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 60V 100A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 5.55mA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 281 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 30 V
на замовлення 1379 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+351.76 грн
10+ 284.14 грн
100+ 229.9 грн
500+ 191.78 грн
AUIRFR9024NTRL INFN-S-A0002298863-1.pdf?t.download=true&u=5oefqw
AUIRFR9024NTRL
Виробник: Infineon Technologies
Description: MOSFET P-CH 55V 11A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 6.6A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
товар відсутній
CY8CMBR3150-LQXIT
Виробник: Infineon Technologies
Description: CAPSENSE EXPRESS
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
BSZ042N04NS
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
товар відсутній
BC847BE6433 INFNS14907-1.pdf?t.download=true&u=5oefqw
BC847BE6433
Виробник: Infineon Technologies
Description: TRANS NPN 45V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
на замовлення 34790 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8689+2.09 грн
Мінімальне замовлення: 8689
TLS850F2TAV50ATMA1 Infineon-TLS850F2TA%20V50-DataSheet-v01_00-EN.pdf?fileId=5546d46266a498f50166e8fa53582ac5
TLS850F2TAV50ATMA1
Виробник: Infineon Technologies
Description: IC REG LINEAR 5V 500MA TO263-7-1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-7-1
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Power Fail
Part Status: Active
PSRR: 59dB (100Hz)
Voltage Dropout (Max): 0.175V @ 250mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 82 µA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1000+125.26 грн
2000+ 114.59 грн
Мінімальне замовлення: 1000
IPI65R310CFDXKSA1700 Infineon-IPX65R310CFD-DS-v02_03-en[1].pdf?fileId=db3a30432f91014f012f9caff105741c
IPI65R310CFDXKSA1700
Виробник: Infineon Technologies
Description: IPI65R310 - 650V AND 700V COOLMO
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
336+68.55 грн
Мінімальне замовлення: 336
IPI120N04S302AKSA1 Infineon-IPP_B_I120N04S3_02-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304412b407950112b42ba1cd4583&ack=t
IPI120N04S302AKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 120A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 230µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14300 pF @ 25 V
на замовлення 50600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
94+227.7 грн
Мінімальне замовлення: 94
IPP120N04S3-02 INFNS10669-1.pdf?t.download=true&u=5oefqw
IPP120N04S3-02
Виробник: Infineon Technologies
Description: PFET, 120A I(D), 40V, 0.0023OHM,
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 230µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14300 pF @ 25 V
на замовлення 30607 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
94+231.11 грн
Мінімальне замовлення: 94
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