Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (136418) > Сторінка 220 з 2274
Фото | Назва | Виробник | Інформація |
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CY8C4013SXI-400 | Infineon Technologies |
![]() Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 8KB (8K x 8) RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 8-SOIC Number of I/O: 5 DigiKey Programmable: Not Verified |
на замовлення 2645 шт: термін постачання 21-31 дні (днів) |
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CY8C4013SXI-410 | Infineon Technologies |
![]() Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 8KB (8K x 8) RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: D/A 1x7b, 1x8b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 8-SOIC Number of I/O: 5 DigiKey Programmable: Not Verified |
на замовлення 2910 шт: термін постачання 21-31 дні (днів) |
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CY8C4013SXI-411 | Infineon Technologies |
![]() Packaging: Tube Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 8KB (8K x 8) RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: D/A 1x7b, 1x8b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 16-SOIC Part Status: Active Number of I/O: 12 DigiKey Programmable: Not Verified |
на замовлення 1432 шт: термін постачання 21-31 дні (днів) |
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CY8C4014LQI-412 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 24-UFQFN Exposed Pad Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 16KB (16K x 8) RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: D/A 1x7b, 1x8b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 24-QFN (4x4) Part Status: Active Number of I/O: 20 DigiKey Programmable: Not Verified |
на замовлення 2360 шт: термін постачання 21-31 дні (днів) |
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CY8C4014LQI-421 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 16-UFQFN Exposed Pad Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 16KB (16K x 8) RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: D/A 1x7b, 1x8b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 16-QFN (3x3) Part Status: Active Number of I/O: 12 DigiKey Programmable: Not Verified |
на замовлення 4532 шт: термін постачання 21-31 дні (днів) |
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CY8C4014LQI-422 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 24-UFQFN Exposed Pad Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 16KB (16K x 8) RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: D/A 1x7b, 1x8b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 24-QFN (4x4) Part Status: Active Number of I/O: 20 DigiKey Programmable: Not Verified |
на замовлення 7 шт: термін постачання 21-31 дні (днів) |
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CY8C4014SXI-411 | Infineon Technologies |
![]() Packaging: Tube Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 16KB (16K x 8) RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: D/A 1x7b, 1x8b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I²C Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 16-SOIC Number of I/O: 13 DigiKey Programmable: Not Verified |
товар відсутній |
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CY8C4014SXI-420 | Infineon Technologies |
![]() Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 16KB (16K x 8) RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: D/A 1x7b, 1x8b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 8-SOIC Part Status: Active Number of I/O: 5 DigiKey Programmable: Not Verified |
на замовлення 2707 шт: термін постачання 21-31 дні (днів) |
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TLE4242GATMA3 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Voltage - Output: 4V Mounting Type: Surface Mount Number of Outputs: 1 Type: Linear Operating Temperature: -40°C ~ 150°C (TJ) Current - Output / Channel: 500mA Internal Switch(s): Yes Supplier Device Package: PG-TO263-7-1 Dimming: PWM Voltage - Supply (Min): 4.5V Voltage - Supply (Max): 42V Grade: Automotive Part Status: Not For New Designs |
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IRF7739L1TRPBF | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: DirectFET™ Isometric L8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 270A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 160A, 10V Power Dissipation (Max): 3.8W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DirectFET™ Isometric L8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11880 pF @ 25 V |
на замовлення 3070 шт: термін постачання 21-31 дні (днів) |
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IRF7749L1TRPBF | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: DirectFET™ Isometric L8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 200A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 120A, 10V Power Dissipation (Max): 3.3W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DirectFET™ Isometric L8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12320 pF @ 25 V |
на замовлення 9670 шт: термін постачання 21-31 дні (днів) |
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IRF7769L1TRPBF | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: DirectFET™ Isometric L8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 124A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 74A, 10V Power Dissipation (Max): 3.3W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DirectFET™ Isometric L8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11560 pF @ 25 V |
на замовлення 11696 шт: термін постачання 21-31 дні (днів) |
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AUIPS2041LTR | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 100mOhm Input Type: Non-Inverting Voltage - Load: 60V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.4A Ratio - Input:Output: 1:1 Supplier Device Package: PG-SOT223 Fault Protection: Current Limiting (Fixed), Over Temperature Grade: Automotive Part Status: Obsolete Qualification: AEC-Q100 |
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AUIPS1041LTR | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 80mOhm Input Type: Non-Inverting Voltage - Load: 6V ~ 28V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.5A Ratio - Input:Output: 1:1 Supplier Device Package: SOT-223 Fault Protection: Current Limiting (Fixed), Over Temperature Grade: Automotive Part Status: Obsolete Qualification: AEC-Q100 |
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CY7C1612KV18-360BZXC | Infineon Technologies |
![]() Packaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 144Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, QDR II Clock Frequency: 360 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (15x17) Memory Interface: Parallel Memory Organization: 8M x 18 DigiKey Programmable: Not Verified |
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CY8C4124AXI-443 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 44-LQFP Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 16KB (16K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 8x12b SAR; D/A 2xIDAC Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT Supplier Device Package: 44-TQFP (10x10) Part Status: Active Number of I/O: 36 DigiKey Programmable: Not Verified |
на замовлення 42 шт: термін постачання 21-31 дні (днів) |
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CYTMA445-44LQI28AA | Infineon Technologies |
Description: IC SCREEN CNTRL 32BIT 44QFN Packaging: Tray Package / Case: 44-UFQFN Exposed Pad Mounting Type: Surface Mount Interface: I²C, SPI Voltage - Supply: 1.71V ~ 5.5V Resolution (Bits): 32 b Supplier Device Package: 44-QFN (5x5) Touchscreen: 2 Wire Capacitive Part Status: Obsolete |
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CY8C4014LQI-SLT2 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 24-UFQFN Exposed Pad Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 16KB (16K x 8) RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: D/A 1x7b, 1x8b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I²C Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 24-QFN (4x4) Number of I/O: 20 DigiKey Programmable: Not Verified |
товар відсутній |
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IRFH7085TRPBF | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 75A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 150µA Supplier Device Package: PQFN (5x6) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 25 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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IRFR7540TRPBF | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 66A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 100µA Supplier Device Package: TO-252AA (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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IRFR7540PBF | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 66A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 100µA Supplier Device Package: TO-252AA (DPAK) Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V |
товар відсутній |
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IRFH7545TRPBF | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 51A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 100µA Supplier Device Package: PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3890 pF @ 25 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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IRFR7546TRPBF | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 43A, 10V Power Dissipation (Max): 99W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 100µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 25 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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IRFR7546PBF | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 43A, 10V Power Dissipation (Max): 99W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 100µA Supplier Device Package: DPAK Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 25 V |
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IRFH7085TRPBF | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 75A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 150µA Supplier Device Package: PQFN (5x6) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 25 V |
на замовлення 5803 шт: термін постачання 21-31 дні (днів) |
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IRFR7540TRPBF | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 66A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 100µA Supplier Device Package: TO-252AA (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V |
на замовлення 5357 шт: термін постачання 21-31 дні (днів) |
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IRFH7545TRPBF | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 51A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 100µA Supplier Device Package: PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3890 pF @ 25 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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IRFR7546TRPBF | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 43A, 10V Power Dissipation (Max): 99W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 100µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 25 V |
на замовлення 6444 шт: термін постачання 21-31 дні (днів) |
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SPP16N50C3XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 675µA Supplier Device Package: PG-TO220-3-111 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 560 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V |
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IRFS7430PBF | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: D2PAK Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14240 pF @ 25 V |
товар відсутній |
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IRFS7434PBF | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V Power Dissipation (Max): 294W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: D2PAK Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 324 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10820 pF @ 25 V |
товар відсутній |
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IRFS7430TRL7PP | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 0.75mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: D2PAK (7-Lead) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13975 pF @ 25 V |
на замовлення 4023 шт: термін постачання 21-31 дні (днів) |
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IRFS7434TRLPBF | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V Power Dissipation (Max): 294W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 324 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10820 pF @ 25 V |
на замовлення 3786 шт: термін постачання 21-31 дні (днів) |
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BCR320U HW LED BOARD | Infineon Technologies |
![]() Packaging: Box Voltage - Input: 24V Current - Output / Channel: 150mA Utilized IC / Part: BCR320U Supplied Contents: Board(s) Outputs and Type: 1, Non-Isolated Part Status: Active |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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BCR402W 12V LED BOARD | Infineon Technologies |
![]() Packaging: Box Voltage - Input: 12V Current - Output / Channel: 20mA Utilized IC / Part: BCR402W Supplied Contents: Board(s) Outputs and Type: 1, Non-Isolated Part Status: Active |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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BCR402W 24V LED BOARD | Infineon Technologies |
![]() Packaging: Box Voltage - Input: 24V Current - Output / Channel: 20mA Utilized IC / Part: BCR402W Supplied Contents: Board(s) Outputs and Type: 1, Non-Isolated Part Status: Active |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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BCR450 BOARD | Infineon Technologies |
![]() Packaging: Box Utilized IC / Part: BCR450 Supplied Contents: Board(s) |
товар відсутній |
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EVALLED-ICL8002G-B1 | Infineon Technologies |
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товар відсутній |
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EVALLED-ICL8002G-B2 | Infineon Technologies |
![]() Packaging: Box Features: Dimmable Voltage - Output: 30V ~ 38V Voltage - Input: 90 ~ 132 VAC Current - Output / Channel: 300mA Utilized IC / Part: ICL8002G Supplied Contents: Board(s) Outputs and Type: 1, Non-Isolated |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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EVALLED-ICL8002G-B3 | Infineon Technologies |
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на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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EVALLED-ILD6070 | Infineon Technologies |
![]() Packaging: Box Features: Dimmable Voltage - Input: 4.5V ~ 60V Current - Output / Channel: 500mA Utilized IC / Part: ILD6070 Supplied Contents: Board(s) Outputs and Type: 1, Non-Isolated |
товар відсутній |
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VALLEDILD6150TOBO1 | Infineon Technologies |
![]() Packaging: Box Features: Dimmable Voltage - Input: 4.5V ~ 60V Current - Output / Channel: 1.5A Utilized IC / Part: ILD6150 Supplied Contents: Board(s) Outputs and Type: 1, Non-Isolated Part Status: Obsolete |
товар відсутній |
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ILD4035 24V BOARD | Infineon Technologies |
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на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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ILD4120 BOARD | Infineon Technologies |
![]() Packaging: Box Features: Dimmable Voltage - Input: 4.5V ~ 30V Current - Output / Channel: 600mA Utilized IC / Part: ILD4120 Supplied Contents: Board(s) Outputs and Type: 1, Non-Isolated |
товар відсутній |
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KITXMC1XAKLED001TOBO1 | Infineon Technologies |
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товар відсутній |
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MR16 3W BOARD | Infineon Technologies |
![]() Packaging: Box Voltage - Input: 12VAC Current - Output / Channel: 350mA Utilized IC / Part: ILD4035 Supplied Contents: Board(s) Outputs and Type: 1, Non-Isolated Part Status: Active |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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ICL8002GXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Number of Outputs: 1 Type: AC DC Offline Switcher Operating Temperature: -40°C ~ 150°C (TJ) Internal Switch(s): No Topology: Flyback, Step-Down (Buck) Supplier Device Package: PG-DSO-8-42 Dimming: PWM Voltage - Supply (Min): 9.8V Voltage - Supply (Max): 26V |
товар відсутній |
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ILD6070XUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 1MHz Type: DC DC Regulator Operating Temperature: -40°C ~ 150°C (TJ) Applications: Lighting Current - Output / Channel: 700mA Internal Switch(s): Yes Topology: Step-Down (Buck) Supplier Device Package: PG-DSO-8 Dimming: Analog, PWM Voltage - Supply (Min): 4.5V Voltage - Supply (Max): 60V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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ILD6150XUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 1MHz Type: DC DC Regulator Operating Temperature: -40°C ~ 150°C (TJ) Applications: Lighting Current - Output / Channel: 1.5A Internal Switch(s): Yes Topology: Step-Down (Buck) Supplier Device Package: PG-DSO-8 Dimming: Analog, PWM Voltage - Supply (Min): 4.5V Voltage - Supply (Max): 60V Part Status: Active |
на замовлення 22500 шт: термін постачання 21-31 дні (днів) |
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IPD80R2K8CEBTMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc) Rds On (Max) @ Id, Vgs: 2.8Ohm @ 1.1A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 120µA Supplier Device Package: PG-TO252-3-11 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V |
товар відсутній |
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IPD80R1K4CEBTMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.3A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 240µA Supplier Device Package: PG-TO252-3-11 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V |
товар відсутній |
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IPD80R1K0CEBTMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: PG-TO252-3-11 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V |
товар відсутній |
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IPU80R1K4CEBKMA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.3A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 240µA Supplier Device Package: PG-TO251-3 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V |
товар відсутній |
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IPU80R2K8CEBKMA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc) Rds On (Max) @ Id, Vgs: 2.8Ohm @ 1.1A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 120µA Supplier Device Package: PG-TO251-3 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V |
товар відсутній |
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IPU80R1K0CEBKMA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: PG-TO251-3 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V |
товар відсутній |
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ICL8002GXUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Number of Outputs: 1 Type: AC DC Offline Switcher Operating Temperature: -40°C ~ 150°C (TJ) Internal Switch(s): No Topology: Flyback, Step-Down (Buck) Supplier Device Package: PG-DSO-8-42 Dimming: PWM Voltage - Supply (Min): 9.8V Voltage - Supply (Max): 26V |
товар відсутній |
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ILD6070XUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 1MHz Type: DC DC Regulator Operating Temperature: -40°C ~ 150°C (TJ) Applications: Lighting Current - Output / Channel: 700mA Internal Switch(s): Yes Topology: Step-Down (Buck) Supplier Device Package: PG-DSO-8 Dimming: Analog, PWM Voltage - Supply (Min): 4.5V Voltage - Supply (Max): 60V |
на замовлення 7494 шт: термін постачання 21-31 дні (днів) |
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ILD6150XUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 1MHz Type: DC DC Regulator Operating Temperature: -40°C ~ 150°C (TJ) Applications: Lighting Current - Output / Channel: 1.5A Internal Switch(s): Yes Topology: Step-Down (Buck) Supplier Device Package: PG-DSO-8 Dimming: Analog, PWM Voltage - Supply (Min): 4.5V Voltage - Supply (Max): 60V Part Status: Active |
на замовлення 23402 шт: термін постачання 21-31 дні (днів) |
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IPD80R2K8CEBTMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc) Rds On (Max) @ Id, Vgs: 2.8Ohm @ 1.1A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 120µA Supplier Device Package: PG-TO252-3-11 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V |
товар відсутній |
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IPD80R1K4CEBTMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.3A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 240µA Supplier Device Package: PG-TO252-3-11 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V |
товар відсутній |
CY8C4013SXI-400 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 8KB FLASH 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 8-SOIC
Number of I/O: 5
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 8KB FLASH 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 8-SOIC
Number of I/O: 5
DigiKey Programmable: Not Verified
на замовлення 2645 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 153.04 грн |
10+ | 132.27 грн |
25+ | 124.78 грн |
100+ | 99.77 грн |
250+ | 93.68 грн |
500+ | 81.97 грн |
1000+ | 66.8 грн |
CY8C4013SXI-410 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 8KB FLASH 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: D/A 1x7b, 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 8-SOIC
Number of I/O: 5
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 8KB FLASH 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: D/A 1x7b, 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 8-SOIC
Number of I/O: 5
DigiKey Programmable: Not Verified
на замовлення 2910 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 153.79 грн |
10+ | 132.85 грн |
25+ | 125.27 грн |
100+ | 100.17 грн |
250+ | 94.06 грн |
500+ | 82.3 грн |
1000+ | 67.08 грн |
2910+ | 62.45 грн |
CY8C4013SXI-411 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 8KB FLASH 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: D/A 1x7b, 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 16-SOIC
Part Status: Active
Number of I/O: 12
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 8KB FLASH 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: D/A 1x7b, 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 16-SOIC
Part Status: Active
Number of I/O: 12
DigiKey Programmable: Not Verified
на замовлення 1432 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 111.57 грн |
10+ | 96.48 грн |
25+ | 90.98 грн |
100+ | 72.73 грн |
250+ | 68.29 грн |
500+ | 59.75 грн |
CY8C4014LQI-412 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 24SQFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: D/A 1x7b, 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
Number of I/O: 20
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 16KB FLASH 24SQFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: D/A 1x7b, 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
Number of I/O: 20
DigiKey Programmable: Not Verified
на замовлення 2360 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 171.88 грн |
10+ | 148.89 грн |
25+ | 140.49 грн |
80+ | 112.33 грн |
230+ | 105.47 грн |
490+ | 92.29 грн |
980+ | 75.21 грн |
CY8C4014LQI-421 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 16QFN
Packaging: Tray
Package / Case: 16-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: D/A 1x7b, 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 16-QFN (3x3)
Part Status: Active
Number of I/O: 12
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 16KB FLASH 16QFN
Packaging: Tray
Package / Case: 16-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: D/A 1x7b, 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 16-QFN (3x3)
Part Status: Active
Number of I/O: 12
DigiKey Programmable: Not Verified
на замовлення 4532 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 182.44 грн |
10+ | 158.04 грн |
25+ | 149.11 грн |
80+ | 119.22 грн |
230+ | 111.95 грн |
490+ | 97.95 грн |
980+ | 79.83 грн |
2450+ | 74.33 грн |
CY8C4014LQI-422 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 24SQFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: D/A 1x7b, 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
Number of I/O: 20
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 16KB FLASH 24SQFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: D/A 1x7b, 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
Number of I/O: 20
DigiKey Programmable: Not Verified
на замовлення 7 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 197.51 грн |
CY8C4014SXI-411 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: D/A 1x7b, 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 16-SOIC
Number of I/O: 13
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 16KB FLASH 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: D/A 1x7b, 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 16-SOIC
Number of I/O: 13
DigiKey Programmable: Not Verified
товар відсутній
CY8C4014SXI-420 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: D/A 1x7b, 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 8-SOIC
Part Status: Active
Number of I/O: 5
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 16KB FLASH 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: D/A 1x7b, 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 8-SOIC
Part Status: Active
Number of I/O: 5
DigiKey Programmable: Not Verified
на замовлення 2707 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 163.59 грн |
10+ | 141.92 грн |
25+ | 133.87 грн |
100+ | 107.04 грн |
250+ | 100.5 грн |
500+ | 87.94 грн |
1000+ | 71.67 грн |
TLE4242GATMA3 |
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Виробник: Infineon Technologies
Description: IC LED DRV LIN PWM 500MA TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Voltage - Output: 4V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 500mA
Internal Switch(s): Yes
Supplier Device Package: PG-TO263-7-1
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 42V
Grade: Automotive
Part Status: Not For New Designs
Description: IC LED DRV LIN PWM 500MA TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Voltage - Output: 4V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 500mA
Internal Switch(s): Yes
Supplier Device Package: PG-TO263-7-1
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 42V
Grade: Automotive
Part Status: Not For New Designs
товар відсутній
IRF7739L1TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 46A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 270A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 160A, 10V
Power Dissipation (Max): 3.8W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11880 pF @ 25 V
Description: MOSFET N-CH 40V 46A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 270A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 160A, 10V
Power Dissipation (Max): 3.8W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11880 pF @ 25 V
на замовлення 3070 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 341.5 грн |
10+ | 276.3 грн |
100+ | 223.53 грн |
500+ | 186.46 грн |
1000+ | 159.66 грн |
2000+ | 150.34 грн |
IRF7749L1TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 33A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 120A, 10V
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12320 pF @ 25 V
Description: MOSFET N-CH 60V 33A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 120A, 10V
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12320 pF @ 25 V
на замовлення 9670 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 340 грн |
10+ | 275.21 грн |
100+ | 222.62 грн |
500+ | 185.71 грн |
1000+ | 159.01 грн |
2000+ | 149.73 грн |
IRF7769L1TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 20A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 124A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 74A, 10V
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11560 pF @ 25 V
Description: MOSFET N-CH 100V 20A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 124A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 74A, 10V
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11560 pF @ 25 V
на замовлення 11696 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 321.9 грн |
10+ | 260.04 грн |
100+ | 210.37 грн |
500+ | 175.49 грн |
1000+ | 150.27 грн |
2000+ | 141.49 грн |
AUIPS2041LTR |
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Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 100mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223
Fault Protection: Current Limiting (Fixed), Over Temperature
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q100
Description: IC PWR SWITCH N-CHAN 1:1 SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 100mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223
Fault Protection: Current Limiting (Fixed), Over Temperature
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q100
товар відсутній
AUIPS1041LTR |
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-223
Fault Protection: Current Limiting (Fixed), Over Temperature
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q100
Description: IC PWR SWITCH N-CHAN 1:1 SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-223
Fault Protection: Current Limiting (Fixed), Over Temperature
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q100
товар відсутній
CY7C1612KV18-360BZXC |
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Виробник: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 360 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 8M x 18
DigiKey Programmable: Not Verified
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 360 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 8M x 18
DigiKey Programmable: Not Verified
товар відсутній
CY8C4124AXI-443 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 44TQFP
Packaging: Tray
Package / Case: 44-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 44-TQFP (10x10)
Part Status: Active
Number of I/O: 36
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 16KB FLASH 44TQFP
Packaging: Tray
Package / Case: 44-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 44-TQFP (10x10)
Part Status: Active
Number of I/O: 36
DigiKey Programmable: Not Verified
на замовлення 42 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 350.55 грн |
10+ | 302.94 грн |
25+ | 286.4 грн |
CYTMA445-44LQI28AA |
Виробник: Infineon Technologies
Description: IC SCREEN CNTRL 32BIT 44QFN
Packaging: Tray
Package / Case: 44-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I²C, SPI
Voltage - Supply: 1.71V ~ 5.5V
Resolution (Bits): 32 b
Supplier Device Package: 44-QFN (5x5)
Touchscreen: 2 Wire Capacitive
Part Status: Obsolete
Description: IC SCREEN CNTRL 32BIT 44QFN
Packaging: Tray
Package / Case: 44-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I²C, SPI
Voltage - Supply: 1.71V ~ 5.5V
Resolution (Bits): 32 b
Supplier Device Package: 44-QFN (5x5)
Touchscreen: 2 Wire Capacitive
Part Status: Obsolete
товар відсутній
CY8C4014LQI-SLT2 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 24SQFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: D/A 1x7b, 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 20
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 16KB FLASH 24SQFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: D/A 1x7b, 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 20
DigiKey Programmable: Not Verified
товар відсутній
IRFH7085TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 100A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 75A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Supplier Device Package: PQFN (5x6)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 25 V
Description: MOSFET N-CH 60V 100A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 75A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Supplier Device Package: PQFN (5x6)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 25 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4000+ | 62.96 грн |
IRFR7540TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 90A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 66A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
Description: MOSFET N-CH 60V 90A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 66A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2000+ | 40.32 грн |
IRFR7540PBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 90A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 66A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
Description: MOSFET N-CH 60V 90A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 66A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
товар відсутній
IRFH7545TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 85A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 51A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3890 pF @ 25 V
Description: MOSFET N-CH 60V 85A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 51A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3890 pF @ 25 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4000+ | 38.61 грн |
IRFR7546TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 56A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 43A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 25 V
Description: MOSFET N-CH 60V 56A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 43A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 25 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2000+ | 26.29 грн |
IRFR7546PBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 56A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 43A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: DPAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 25 V
Description: MOSFET N-CH 60V 56A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 43A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: DPAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 25 V
товар відсутній
IRFH7085TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 100A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 75A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Supplier Device Package: PQFN (5x6)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 25 V
Description: MOSFET N-CH 60V 100A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 75A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Supplier Device Package: PQFN (5x6)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 25 V
на замовлення 5803 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 140.22 грн |
10+ | 111.72 грн |
100+ | 88.89 грн |
500+ | 70.58 грн |
1000+ | 59.89 грн |
2000+ | 56.9 грн |
IRFR7540TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 90A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 66A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
Description: MOSFET N-CH 60V 90A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 66A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
на замовлення 5357 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 97.25 грн |
10+ | 76.81 грн |
100+ | 59.73 грн |
500+ | 47.51 грн |
1000+ | 38.7 грн |
IRFH7545TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 85A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 51A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3890 pF @ 25 V
Description: MOSFET N-CH 60V 85A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 51A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3890 pF @ 25 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 93.48 грн |
10+ | 73.54 грн |
100+ | 57.2 грн |
500+ | 45.5 грн |
1000+ | 37.06 грн |
2000+ | 34.89 грн |
IRFR7546TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 56A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 43A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 25 V
Description: MOSFET N-CH 60V 56A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 43A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 25 V
на замовлення 6444 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 49 грн |
10+ | 38.84 грн |
100+ | 30.2 грн |
500+ | 24.02 грн |
1000+ | 23.76 грн |
SPP16N50C3XKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 560V 16A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 675µA
Supplier Device Package: PG-TO220-3-111
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Description: MOSFET N-CH 560V 16A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 675µA
Supplier Device Package: PG-TO220-3-111
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
товар відсутній
IRFS7430PBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14240 pF @ 25 V
Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14240 pF @ 25 V
товар відсутній
IRFS7434PBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 324 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10820 pF @ 25 V
Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 324 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10820 pF @ 25 V
товар відсутній
IRFS7430TRL7PP |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 240A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13975 pF @ 25 V
Description: MOSFET N-CH 40V 240A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13975 pF @ 25 V
на замовлення 4023 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 174.9 грн |
10+ | 141.85 грн |
100+ | 114.71 грн |
IRFS7434TRLPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 324 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10820 pF @ 25 V
Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 324 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10820 pF @ 25 V
на замовлення 3786 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 206.56 грн |
10+ | 165.3 грн |
100+ | 131.55 грн |
BCR320U HW LED BOARD |
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Виробник: Infineon Technologies
Description: BOARD LED BCR320U HW
Packaging: Box
Voltage - Input: 24V
Current - Output / Channel: 150mA
Utilized IC / Part: BCR320U
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Active
Description: BOARD LED BCR320U HW
Packaging: Box
Voltage - Input: 24V
Current - Output / Channel: 150mA
Utilized IC / Part: BCR320U
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1383.36 грн |
BCR402W 12V LED BOARD |
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Виробник: Infineon Technologies
Description: BOARD LED BCR402W 12V
Packaging: Box
Voltage - Input: 12V
Current - Output / Channel: 20mA
Utilized IC / Part: BCR402W
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Active
Description: BOARD LED BCR402W 12V
Packaging: Box
Voltage - Input: 12V
Current - Output / Channel: 20mA
Utilized IC / Part: BCR402W
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1640.43 грн |
BCR402W 24V LED BOARD |
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Виробник: Infineon Technologies
Description: BOARD LED BCR402W 24V
Packaging: Box
Voltage - Input: 24V
Current - Output / Channel: 20mA
Utilized IC / Part: BCR402W
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Active
Description: BOARD LED BCR402W 24V
Packaging: Box
Voltage - Input: 24V
Current - Output / Channel: 20mA
Utilized IC / Part: BCR402W
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1443.67 грн |
BCR450 BOARD |
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Виробник: Infineon Technologies
Description: BOARD LED BCR450
Packaging: Box
Utilized IC / Part: BCR450
Supplied Contents: Board(s)
Description: BOARD LED BCR450
Packaging: Box
Utilized IC / Part: BCR450
Supplied Contents: Board(s)
товар відсутній
EVALLED-ICL8002G-B1 |
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Виробник: Infineon Technologies
Description: BOARD EVAL ICL8002 DIM 13W LED
Description: BOARD EVAL ICL8002 DIM 13W LED
товар відсутній
EVALLED-ICL8002G-B2 |
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Виробник: Infineon Technologies
Description: BOARD EVAL ICL8002 DIM 12W LED
Packaging: Box
Features: Dimmable
Voltage - Output: 30V ~ 38V
Voltage - Input: 90 ~ 132 VAC
Current - Output / Channel: 300mA
Utilized IC / Part: ICL8002G
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Description: BOARD EVAL ICL8002 DIM 12W LED
Packaging: Box
Features: Dimmable
Voltage - Output: 30V ~ 38V
Voltage - Input: 90 ~ 132 VAC
Current - Output / Channel: 300mA
Utilized IC / Part: ICL8002G
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
на замовлення 1 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 10438.87 грн |
EVALLED-ICL8002G-B3 |
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Виробник: Infineon Technologies
Description: BOARD EVAL ICL8002 DIM 20W LED
Description: BOARD EVAL ICL8002 DIM 20W LED
на замовлення 1 шт:
термін постачання 21-31 дні (днів)EVALLED-ILD6070 |
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Виробник: Infineon Technologies
Description: BOARD EVAL ILD6070 60V 0.7A
Packaging: Box
Features: Dimmable
Voltage - Input: 4.5V ~ 60V
Current - Output / Channel: 500mA
Utilized IC / Part: ILD6070
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Description: BOARD EVAL ILD6070 60V 0.7A
Packaging: Box
Features: Dimmable
Voltage - Input: 4.5V ~ 60V
Current - Output / Channel: 500mA
Utilized IC / Part: ILD6070
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
товар відсутній
VALLEDILD6150TOBO1 |
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Виробник: Infineon Technologies
Description: BOARD EVAL ILD6150 60V 1.5A
Packaging: Box
Features: Dimmable
Voltage - Input: 4.5V ~ 60V
Current - Output / Channel: 1.5A
Utilized IC / Part: ILD6150
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Obsolete
Description: BOARD EVAL ILD6150 60V 1.5A
Packaging: Box
Features: Dimmable
Voltage - Input: 4.5V ~ 60V
Current - Output / Channel: 1.5A
Utilized IC / Part: ILD6150
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Obsolete
товар відсутній
ILD4035 24V BOARD |
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Виробник: Infineon Technologies
Description: BOARD EVAL ILD4035 24V
Description: BOARD EVAL ILD4035 24V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)ILD4120 BOARD |
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Виробник: Infineon Technologies
Description: BOARD EVAL ILD4120 3W
Packaging: Box
Features: Dimmable
Voltage - Input: 4.5V ~ 30V
Current - Output / Channel: 600mA
Utilized IC / Part: ILD4120
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Description: BOARD EVAL ILD4120 3W
Packaging: Box
Features: Dimmable
Voltage - Input: 4.5V ~ 30V
Current - Output / Channel: 600mA
Utilized IC / Part: ILD4120
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
товар відсутній
KITXMC1XAKLED001TOBO1 |
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Виробник: Infineon Technologies
Description: LED LIGHTING APPL KIT XMC1200
Description: LED LIGHTING APPL KIT XMC1200
товар відсутній
MR16 3W BOARD |
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Виробник: Infineon Technologies
Description: EVAL BOARD MR16 3W ILD4035
Packaging: Box
Voltage - Input: 12VAC
Current - Output / Channel: 350mA
Utilized IC / Part: ILD4035
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Active
Description: EVAL BOARD MR16 3W ILD4035
Packaging: Box
Voltage - Input: 12VAC
Current - Output / Channel: 350mA
Utilized IC / Part: ILD4035
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1555.99 грн |
ICL8002GXUMA1 |
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Виробник: Infineon Technologies
Description: IC LED DRIVER OFFL PWM 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 150°C (TJ)
Internal Switch(s): No
Topology: Flyback, Step-Down (Buck)
Supplier Device Package: PG-DSO-8-42
Dimming: PWM
Voltage - Supply (Min): 9.8V
Voltage - Supply (Max): 26V
Description: IC LED DRIVER OFFL PWM 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 150°C (TJ)
Internal Switch(s): No
Topology: Flyback, Step-Down (Buck)
Supplier Device Package: PG-DSO-8-42
Dimming: PWM
Voltage - Supply (Min): 9.8V
Voltage - Supply (Max): 26V
товар відсутній
ILD6070XUMA1 |
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Виробник: Infineon Technologies
Description: IC LED DRVR RGLTR PWM 700MA 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 700mA
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: PG-DSO-8
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 60V
Description: IC LED DRVR RGLTR PWM 700MA 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 700mA
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: PG-DSO-8
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 60V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 81.93 грн |
5000+ | 75.98 грн |
ILD6150XUMA1 |
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Виробник: Infineon Technologies
Description: IC LED DRVR RGLTR PWM 1.5A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 1.5A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: PG-DSO-8
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 60V
Part Status: Active
Description: IC LED DRVR RGLTR PWM 1.5A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 1.5A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: PG-DSO-8
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 60V
Part Status: Active
на замовлення 22500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 56.8 грн |
5000+ | 52.67 грн |
12500+ | 50.65 грн |
IPD80R2K8CEBTMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 1.9A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 1.1A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 120µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V
Description: MOSFET N-CH 800V 1.9A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 1.1A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 120µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V
товар відсутній
IPD80R1K4CEBTMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 3.9A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.3A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
Description: MOSFET N-CH 800V 3.9A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.3A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
товар відсутній
IPD80R1K0CEBTMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 5.7A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
Description: MOSFET N-CH 800V 5.7A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
товар відсутній
IPU80R1K4CEBKMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 3.9A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.3A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Supplier Device Package: PG-TO251-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
Description: MOSFET N-CH 800V 3.9A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.3A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Supplier Device Package: PG-TO251-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
товар відсутній
IPU80R2K8CEBKMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 1.9A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 1.1A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 120µA
Supplier Device Package: PG-TO251-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V
Description: MOSFET N-CH 800V 1.9A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 1.1A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 120µA
Supplier Device Package: PG-TO251-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V
товар відсутній
IPU80R1K0CEBKMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 5.7A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO251-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
Description: MOSFET N-CH 800V 5.7A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO251-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
товар відсутній
ICL8002GXUMA1 |
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Виробник: Infineon Technologies
Description: IC LED DRIVER OFFL PWM 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 150°C (TJ)
Internal Switch(s): No
Topology: Flyback, Step-Down (Buck)
Supplier Device Package: PG-DSO-8-42
Dimming: PWM
Voltage - Supply (Min): 9.8V
Voltage - Supply (Max): 26V
Description: IC LED DRIVER OFFL PWM 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 150°C (TJ)
Internal Switch(s): No
Topology: Flyback, Step-Down (Buck)
Supplier Device Package: PG-DSO-8-42
Dimming: PWM
Voltage - Supply (Min): 9.8V
Voltage - Supply (Max): 26V
товар відсутній
ILD6070XUMA1 |
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Виробник: Infineon Technologies
Description: IC LED DRVR RGLTR PWM 700MA 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 700mA
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: PG-DSO-8
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 60V
Description: IC LED DRVR RGLTR PWM 700MA 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 700mA
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: PG-DSO-8
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 60V
на замовлення 7494 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 178.67 грн |
10+ | 154.85 грн |
25+ | 146.12 грн |
100+ | 116.83 грн |
250+ | 109.69 грн |
500+ | 95.98 грн |
1000+ | 78.22 грн |
ILD6150XUMA1 |
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Виробник: Infineon Technologies
Description: IC LED DRVR RGLTR PWM 1.5A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 1.5A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: PG-DSO-8
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 60V
Part Status: Active
Description: IC LED DRVR RGLTR PWM 1.5A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 1.5A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: PG-DSO-8
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 60V
Part Status: Active
на замовлення 23402 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 124.39 грн |
10+ | 107.37 грн |
25+ | 101.28 грн |
100+ | 80.99 грн |
250+ | 76.05 грн |
500+ | 66.54 грн |
1000+ | 54.23 грн |
IPD80R2K8CEBTMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 1.9A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 1.1A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 120µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V
Description: MOSFET N-CH 800V 1.9A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 1.1A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 120µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V
товар відсутній
IPD80R1K4CEBTMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 3.9A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.3A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
Description: MOSFET N-CH 800V 3.9A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.3A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
товар відсутній