Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (137771) > Сторінка 216 з 2297
Фото | Назва | Виробник | Інформація |
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IFX1963TEVATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 1.5A Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 1.5 mA Voltage - Input (Max): 20V Number of Regulators: 1 Supplier Device Package: PG-TO252-5-13 Voltage - Output (Max): 19.45V Voltage - Output (Min/Fixed): 1.21V Control Features: Enable Part Status: Obsolete PSRR: 67dB (120Hz) Voltage Dropout (Max): 0.55V @ 1.5A Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 130 mA |
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IFX20002MBV50HTSA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 6-SMD (5 Leads), Gull Wing Output Type: Fixed Mounting Type: Surface Mount Current - Output: 30mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 170 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: PG-SCT595-5 Voltage - Output (Min/Fixed): 5V Control Features: Inhibit Part Status: Obsolete PSRR: 60dB (100Hz) Voltage Dropout (Max): 0.3V @ 20mA Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 5.2 mA |
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IFX78M05ABTFATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 5 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: PG-TO252-3 Voltage - Output (Min/Fixed): 5V Part Status: Obsolete PSRR: 75dB (120Hz) Voltage Dropout (Max): 2V @ 500mA (Typ) Protection Features: Over Current, Over Temperature, Short Circuit Current - Supply (Max): 6 mA |
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IFX7805ABTSAKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Output Type: Fixed Mounting Type: Through Hole Current - Output: 1A Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 5 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: PG-TO220-3 Voltage - Output (Min/Fixed): 5V Part Status: Obsolete PSRR: 75dB (120Hz) Voltage Dropout (Max): 2V @ 1A (Typ) Protection Features: Over Current, Over Temperature, Short Circuit Current - Supply (Max): 6 mA |
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IR3837MTRPBF | Infineon Technologies |
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IR3838MTRPBF | Infineon Technologies |
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IR3841MTRPBF | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 15-PowerVQFN Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 8A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 225kHz ~ 1.65MHz Voltage - Input (Max): 16V Topology: Buck Supplier Device Package: PQFN (5x6) Synchronous Rectifier: Yes Voltage - Output (Max): 14.4V Voltage - Input (Min): 1.5V Voltage - Output (Min/Fixed): 0.7V |
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IR3841WMTRPBF | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 15-PowerVQFN Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 8A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 225kHz ~ 1.65MHz Voltage - Input (Max): 16V Topology: Buck Supplier Device Package: PQFN (5x6) Synchronous Rectifier: Yes Voltage - Output (Max): 14.4V Voltage - Input (Min): 1.5V Voltage - Output (Min/Fixed): 0.7V |
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IRF6674TRPBF | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: DirectFET™ Isometric MZ Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 67A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 13.4A, 10V Power Dissipation (Max): 3.6W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 4.9V @ 100µA Supplier Device Package: DIRECTFET™ MZ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V |
на замовлення 13534 шт: термін постачання 21-31 дні (днів) |
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IRF6715MTRPBF | Infineon Technologies |
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на замовлення 20 шт: термін постачання 21-31 дні (днів) |
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IRF6717MTRPBF | Infineon Technologies |
![]() ![]() Packaging: Cut Tape (CT) Package / Case: DirectFET™ Isometric MX Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc) Rds On (Max) @ Id, Vgs: 1.25mOhm @ 38A, 10V Power Dissipation (Max): 2.8W (Ta), 96W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 150µA Supplier Device Package: DIRECTFET™ MX Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 6750 pF @ 13 V |
на замовлення 4499 шт: термін постачання 21-31 дні (днів) |
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IRF6727MTRPBF | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: DirectFET™ Isometric MX Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 180A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 32A, 10V Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 100µA Supplier Device Package: DIRECTFET™ MX Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 6190 pF @ 15 V |
на замовлення 1738 шт: термін постачання 21-31 дні (днів) |
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IRF6785MTRPBF | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: DirectFET™ Isometric MZ Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 19A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 4.2A, 10V Power Dissipation (Max): 2.8W (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: DIRECTFET™ MZ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V |
на замовлення 9600 шт: термін постачання 21-31 дні (днів) |
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IRF7749L2TRPBF | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: DirectFET™ Isometric L8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 375A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 120A, 10V Power Dissipation (Max): 3.3W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DirectFET™ Isometric L8 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12320 pF @ 25 V |
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IRF7779L2TRPBF | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: DirectFET™ Isometric L8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 67A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 40A, 10V Power Dissipation (Max): 3.3W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: DirectFET™ Isometric L8 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V |
на замовлення 5082 шт: термін постачання 21-31 дні (днів) |
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IRF7946TRPBF | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: DirectFET™ Isometric MX Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 90A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 150µA Supplier Device Package: DIRECTFET™ MX Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6852 pF @ 25 V |
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IRFHM4231TRPBF | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V Power Dissipation (Max): 2.7W (Ta), 29W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 35µA Supplier Device Package: 8-PQFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 13 V |
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IRFH4255DTRPBF | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 31W, 38W Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 64A, 105A Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 13V Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 35µA Supplier Device Package: PQFN (5x6) |
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IRFHM4231TRPBF | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V Power Dissipation (Max): 2.7W (Ta), 29W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 35µA Supplier Device Package: 8-PQFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 13 V |
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IRFH7185TRPBF | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 10V Power Dissipation (Max): 3.6W (Ta), 160W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 150µA Supplier Device Package: 8-PQFN (5x6) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 50 V |
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IRFH7185TRPBF | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 10V Power Dissipation (Max): 3.6W (Ta), 160W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 150µA Supplier Device Package: 8-PQFN (5x6) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 50 V |
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SAK-TC1767-256F133HR AD | Infineon Technologies |
![]() Packaging: Tray Package / Case: 176-LQFP Mounting Type: Surface Mount Speed: 133MHz Program Memory Size: 2MB (2M x 8) RAM Size: 128K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: FLASH Core Processor: TriCore™ Data Converters: A/D 4x10b, 32x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.42V ~ 1.58V Connectivity: ASC, CANbus, MLI, MSC, SSC Peripherals: DMA, POR, WDT Supplier Device Package: PG-LQFP-176-5 Part Status: Obsolete Number of I/O: 88 DigiKey Programmable: Not Verified |
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IPB117N20NFDATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 84A (Tc) Rds On (Max) @ Id, Vgs: 11.7mOhm @ 84A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 270µA Supplier Device Package: PG-TO263-3-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 100 V |
на замовлення 3459 шт: термін постачання 21-31 дні (днів) |
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IPP120N20NFDAKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 84A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 84A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 270µA Supplier Device Package: PG-TO220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 100 V |
на замовлення 727 шт: термін постачання 21-31 дні (днів) |
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TLE42662GHTMA2 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: PG-SOT223-4 Voltage - Output (Min/Fixed): 5V Control Features: Inhibit Part Status: Active PSRR: 68dB (100Hz) Voltage Dropout (Max): 0.5V @ 100mA Protection Features: Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 4 mA Grade: Automotive Qualification: AEC-Q100 |
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BFP760H6327XTSA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 16.5dB ~ 29dB Power - Max: 240mW Current - Collector (Ic) (Max): 70mA Voltage - Collector Emitter Breakdown (Max): 4V DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 35mA, 3V Frequency - Transition: 45GHz Noise Figure (dB Typ @ f): 0.5dB ~ 0.95dB @ 900MHz ~ 5.5GHz Supplier Device Package: PG-SOT343-4-2 Part Status: Active |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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BFP843H6327XTSA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 13.5dB ~ 24.5dB Power - Max: 125mW Current - Collector (Ic) (Max): 55mA Voltage - Collector Emitter Breakdown (Max): 2.25V DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 15mA, 1.8V Noise Figure (dB Typ @ f): 0.9dB ~ 1.85dB @ 450MHz ~ 10GHz Supplier Device Package: PG-SOT343-4-3 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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BFP843FH6327XTSA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Flat Leads Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 13.5dB ~ 25dB Power - Max: 125mW Current - Collector (Ic) (Max): 55mA Voltage - Collector Emitter Breakdown (Max): 2.25V DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 15mA, 1.8V Noise Figure (dB Typ @ f): 0.8dB ~ 1.7dB @ 450MHz ~ 10GHz Supplier Device Package: PG-TSFP-4-1 |
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BGA524N6E6327XTSA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Mounting Type: Surface Mount Frequency: 1.55GHz ~ 1.615GHz RF Type: GPS/GNSS Voltage - Supply: 1.5V ~ 3.3V Gain: 19.6dB Current - Supply: 2.5mA Noise Figure: 0.55dB P1dB: -16dBm Test Frequency: 1.55GHz ~ 1.615GHz Supplier Device Package: TSNP-6-2 Part Status: Active |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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BGA751N7E6327XTSA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Frequency: 850MHz RF Type: Cellular Voltage - Supply: 2.6V ~ 3V Gain: 15.3dB Current - Supply: 3.3mA Noise Figure: 1.1dB Test Frequency: 850MHz Supplier Device Package: TSNP-7-1 |
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BGA777N7E6327XTSA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Frequency: 2.3GHz ~ 2.7GHz RF Type: UMTS Voltage - Supply: 2.6V ~ 3V Gain: 16dB Current - Supply: 4.2mA Noise Figure: 1.2dB Test Frequency: 2.3GHz ~ 2.7MHz Supplier Device Package: TSNP-7-1 |
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BGA824N6E6327XTSA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Mounting Type: Surface Mount Frequency: 1.55GHz ~ 1.615GHz RF Type: Galileo, GLONASS, GPS Voltage - Supply: 1.5V ~ 3.3V Gain: 17dB Current - Supply: 3.8mA Noise Figure: 0.55dB P1dB: -9dBm Test Frequency: 1.55GHz ~ 1.615GHz Supplier Device Package: TSNP-6-2 |
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BGM1043N7E6327XUSA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-WFDFN Exposed Pad Mounting Type: Surface Mount Frequency: 1575.42MHz RF Type: Galileo, GLONASS, GPS Voltage - Supply: 1.5V ~ 3.6V Gain: 14.6dB, 15.1dB Current - Supply: 4mA Noise Figure: 1.5dB P1dB: -6dBm Test Frequency: 1575.42MHz, 1598.06MHz ~ 1605.38MHz Supplier Device Package: TSNP-7-10 |
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BGSF18DM20E6727XUMA1 | Infineon Technologies |
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на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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ESD101B102ELE6327XTMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: RF Antenna Capacitance @ Frequency: 0.2pF @ 1MHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: PG-TSLP-2-20 Bidirectional Channels: 1 Voltage - Breakdown (Min): 7.3V (Typ) Voltage - Clamping (Max) @ Ipp: 30V Power Line Protection: No Part Status: Not For New Designs |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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ESD103B102ELE6327XTMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: RF Antenna Capacitance @ Frequency: 0.13pF @ 1MHz Current - Peak Pulse (10/1000µs): 16A (100ns) Voltage - Reverse Standoff (Typ): 15V (Max) Supplier Device Package: PG-TSLP-2-20 Bidirectional Channels: 1 Voltage - Breakdown (Min): 21V (Typ) Voltage - Clamping (Max) @ Ipp: 48V (Typ) Power Line Protection: No Part Status: Not For New Designs |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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ESD105B102ELE6327XTMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: Ethernet, HDMI Capacitance @ Frequency: 0.3pF @ 1MHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: PG-TSLP-2-20 Bidirectional Channels: 1 Voltage - Breakdown (Min): 6.1V Voltage - Clamping (Max) @ Ipp: 14V Power - Peak Pulse: 70W Power Line Protection: No Part Status: Not For New Designs |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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ESD110B102ELSE6327XTSA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 85°C (TA) Applications: RF Antenna Capacitance @ Frequency: 0.3pF @ 1MHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 18.5V (Max) Supplier Device Package: PG-TSSLP-2-4 Bidirectional Channels: 1 Voltage - Breakdown (Min): 20V Voltage - Clamping (Max) @ Ipp: 17V (Typ) Power Line Protection: No |
товар відсутній |
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ESD112B102ELE6327XTMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: RF Antenna Capacitance @ Frequency: 0.23pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 5.3V (Max) Supplier Device Package: PG-TSLP-2-20 Bidirectional Channels: 1 Voltage - Breakdown (Min): 7V Voltage - Clamping (Max) @ Ipp: 21V Power Line Protection: No Part Status: Not For New Designs |
на замовлення 105000 шт: термін постачання 21-31 дні (днів) |
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ESD113B102ELSE6327XTSA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TA) Applications: HDMI Capacitance @ Frequency: 0.22pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 3.6V (Max) Supplier Device Package: PG-TSSLP-2-4 Bidirectional Channels: 1 Voltage - Clamping (Max) @ Ipp: 8V Power Line Protection: No Part Status: Not For New Designs |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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ESD203B102ELSE6327XTSA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 6pF @ 1MHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 13.2V (Max) Supplier Device Package: PG-TSSLP-2-4 Bidirectional Channels: 1 Voltage - Breakdown (Min): 13.7V Voltage - Clamping (Max) @ Ipp: 23V Power - Peak Pulse: 115W Power Line Protection: No Part Status: Not For New Designs |
товар відсутній |
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ESD204B102ELE6327XTMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 4pF @ 1MHz Current - Peak Pulse (10/1000µs): 1A (8/20µs) Voltage - Reverse Standoff (Typ): 14V (Max) Supplier Device Package: PG-TSLP-2-20 Bidirectional Channels: 1 Voltage - Breakdown (Min): 8.5V Voltage - Clamping (Max) @ Ipp: 28V Power Line Protection: No |
товар відсутній |
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ESD206B102ELE6327XTMA1 | Infineon Technologies |
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товар відсутній |
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ESD207B102ELSE6327XTSA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 14pF @ 1MHz Current - Peak Pulse (10/1000µs): 8A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: PG-TSSLP-2-3 Bidirectional Channels: 1 Voltage - Breakdown (Min): 3.65V Voltage - Clamping (Max) @ Ipp: 8.1V Power Line Protection: No Part Status: Obsolete |
товар відсутній |
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ESD208B102ELE6327XTMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 6pF @ 1MHz Current - Peak Pulse (10/1000µs): 4A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: PG-TSLP-2-19 Bidirectional Channels: 1 Voltage - Breakdown (Min): 3.65V Voltage - Clamping (Max) @ Ipp: 8.1V Power - Peak Pulse: 30W Power Line Protection: No Part Status: Not For New Designs |
на замовлення 45000 шт: термін постачання 21-31 дні (днів) |
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BGT24MR2E6327XUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 32-PowerVFQFN Mounting Type: Surface Mount Function: Receiver Frequency: 24GHz RF Type: General Purpose Supplier Device Package: PG-VQFN-32-9 Part Status: Active |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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BGT24MTR11E6327XUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 32-PowerVFQFN Mounting Type: Surface Mount Function: Transceiver Frequency: 24GHz ~ 26GHz RF Type: General Purpose Supplier Device Package: PG-VQFN-32-9 Part Status: Active |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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BGT24MTR12E6327XUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 32-PowerVFQFN Mounting Type: Surface Mount Function: Transceiver Frequency: 24GHz ~ 24.25GHz RF Type: General Purpose Supplier Device Package: PG-VQFN-32-9 Part Status: Active |
товар відсутній |
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BAT1502LRHE6327XTSA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: SOD-882 Diode Type: Schottky - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz Voltage - Peak Reverse (Max): 4V Supplier Device Package: PG-TSLP-2-7 Part Status: Active Current - Max: 110 mA Power Dissipation (Max): 100 mW |
на замовлення 12127 шт: термін постачання 21-31 дні (днів) |
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BFP760H6327XTSA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 16.5dB ~ 29dB Power - Max: 240mW Current - Collector (Ic) (Max): 70mA Voltage - Collector Emitter Breakdown (Max): 4V DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 35mA, 3V Frequency - Transition: 45GHz Noise Figure (dB Typ @ f): 0.5dB ~ 0.95dB @ 900MHz ~ 5.5GHz Supplier Device Package: PG-SOT343-4-2 Part Status: Active |
на замовлення 14282 шт: термін постачання 21-31 дні (днів) |
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BFP843H6327XTSA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 13.5dB ~ 24.5dB Power - Max: 125mW Current - Collector (Ic) (Max): 55mA Voltage - Collector Emitter Breakdown (Max): 2.25V DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 15mA, 1.8V Noise Figure (dB Typ @ f): 0.9dB ~ 1.85dB @ 450MHz ~ 10GHz Supplier Device Package: PG-SOT343-4-3 |
на замовлення 9027 шт: термін постачання 21-31 дні (днів) |
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BFP843FH6327XTSA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 4-SMD, Flat Leads Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 13.5dB ~ 25dB Power - Max: 125mW Current - Collector (Ic) (Max): 55mA Voltage - Collector Emitter Breakdown (Max): 2.25V DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 15mA, 1.8V Noise Figure (dB Typ @ f): 0.8dB ~ 1.7dB @ 450MHz ~ 10GHz Supplier Device Package: PG-TSFP-4-1 |
на замовлення 152 шт: термін постачання 21-31 дні (днів) |
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BFR720L3RHE6327XTSA1 | Infineon Technologies |
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товар відсутній |
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BGA524N6E6327XTSA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Mounting Type: Surface Mount Frequency: 1.55GHz ~ 1.615GHz RF Type: GPS/GNSS Voltage - Supply: 1.5V ~ 3.3V Gain: 19.6dB Current - Supply: 2.5mA Noise Figure: 0.55dB P1dB: -16dBm Test Frequency: 1.55GHz ~ 1.615GHz Supplier Device Package: TSNP-6-2 Part Status: Active |
на замовлення 45890 шт: термін постачання 21-31 дні (днів) |
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BGA751N7E6327XTSA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Frequency: 850MHz RF Type: Cellular Voltage - Supply: 2.6V ~ 3V Gain: 15.3dB Current - Supply: 3.3mA Noise Figure: 1.1dB Test Frequency: 850MHz Supplier Device Package: TSNP-7-1 |
товар відсутній |
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BGA777N7E6327XTSA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Frequency: 2.3GHz ~ 2.7GHz RF Type: UMTS Voltage - Supply: 2.6V ~ 3V Gain: 16dB Current - Supply: 4.2mA Noise Figure: 1.2dB Test Frequency: 2.3GHz ~ 2.7MHz Supplier Device Package: TSNP-7-1 |
на замовлення 6455 шт: термін постачання 21-31 дні (днів) |
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BGA824N6E6327XTSA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Mounting Type: Surface Mount Frequency: 1.55GHz ~ 1.615GHz RF Type: Galileo, GLONASS, GPS Voltage - Supply: 1.5V ~ 3.3V Gain: 17dB Current - Supply: 3.8mA Noise Figure: 0.55dB P1dB: -9dBm Test Frequency: 1.55GHz ~ 1.615GHz Supplier Device Package: TSNP-6-2 |
товар відсутній |
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BGSF18DM20E6727XUMA1 | Infineon Technologies |
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товар відсутній |
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ESD101B102ELE6327XTMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: RF Antenna Capacitance @ Frequency: 0.2pF @ 1MHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: PG-TSLP-2-20 Bidirectional Channels: 1 Voltage - Breakdown (Min): 7.3V (Typ) Voltage - Clamping (Max) @ Ipp: 30V Power Line Protection: No Part Status: Not For New Designs |
на замовлення 25395 шт: термін постачання 21-31 дні (днів) |
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ESD103B102ELE6327XTMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: RF Antenna Capacitance @ Frequency: 0.13pF @ 1MHz Current - Peak Pulse (10/1000µs): 16A (100ns) Voltage - Reverse Standoff (Typ): 15V (Max) Supplier Device Package: PG-TSLP-2-20 Bidirectional Channels: 1 Voltage - Breakdown (Min): 21V (Typ) Voltage - Clamping (Max) @ Ipp: 48V (Typ) Power Line Protection: No Part Status: Not For New Designs |
на замовлення 30358 шт: термін постачання 21-31 дні (днів) |
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IFX1963TEVATMA1 |
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Виробник: Infineon Technologies
Description: IC REG LIN POS ADJ 1.5A TO252-5
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 1.5 mA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: PG-TO252-5-13
Voltage - Output (Max): 19.45V
Voltage - Output (Min/Fixed): 1.21V
Control Features: Enable
Part Status: Obsolete
PSRR: 67dB (120Hz)
Voltage Dropout (Max): 0.55V @ 1.5A
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 130 mA
Description: IC REG LIN POS ADJ 1.5A TO252-5
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 1.5 mA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: PG-TO252-5-13
Voltage - Output (Max): 19.45V
Voltage - Output (Min/Fixed): 1.21V
Control Features: Enable
Part Status: Obsolete
PSRR: 67dB (120Hz)
Voltage Dropout (Max): 0.55V @ 1.5A
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 130 mA
товар відсутній
IFX20002MBV50HTSA1 |
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Виробник: Infineon Technologies
Description: IC REG LINEAR 5V 30MA SCT595-5
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 30mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 170 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5
Voltage - Output (Min/Fixed): 5V
Control Features: Inhibit
Part Status: Obsolete
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.3V @ 20mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 5.2 mA
Description: IC REG LINEAR 5V 30MA SCT595-5
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 30mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 170 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5
Voltage - Output (Min/Fixed): 5V
Control Features: Inhibit
Part Status: Obsolete
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.3V @ 20mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 5.2 mA
товар відсутній
IFX78M05ABTFATMA1 |
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Виробник: Infineon Technologies
Description: IC REG LINEAR 5V 500MA TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 5 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
PSRR: 75dB (120Hz)
Voltage Dropout (Max): 2V @ 500mA (Typ)
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 6 mA
Description: IC REG LINEAR 5V 500MA TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 5 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
PSRR: 75dB (120Hz)
Voltage Dropout (Max): 2V @ 500mA (Typ)
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 6 mA
товар відсутній
IFX7805ABTSAKSA1 |
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Виробник: Infineon Technologies
Description: IC REG LINEAR 5V 1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 5 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: PG-TO220-3
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
PSRR: 75dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 6 mA
Description: IC REG LINEAR 5V 1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 5 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: PG-TO220-3
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
PSRR: 75dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 6 mA
товар відсутній
IR3841MTRPBF |
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Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 8A PQFN
Packaging: Cut Tape (CT)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 8A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.65MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14.4V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.7V
Description: IC REG BUCK ADJ 8A PQFN
Packaging: Cut Tape (CT)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 8A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.65MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14.4V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.7V
товар відсутній
IR3841WMTRPBF |
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Виробник: Infineon Technologies
Description: IC REG BUCK ADJUSTABLE 8A PQFN
Packaging: Cut Tape (CT)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 8A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.65MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14.4V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.7V
Description: IC REG BUCK ADJUSTABLE 8A PQFN
Packaging: Cut Tape (CT)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 8A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.65MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14.4V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.7V
товар відсутній
IRF6674TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 13.4A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MZ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 67A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 13.4A, 10V
Power Dissipation (Max): 3.6W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: DIRECTFET™ MZ
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Description: MOSFET N-CH 60V 13.4A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MZ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 67A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 13.4A, 10V
Power Dissipation (Max): 3.6W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: DIRECTFET™ MZ
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
на замовлення 13534 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
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2+ | 220.49 грн |
10+ | 178.13 грн |
100+ | 144.14 грн |
500+ | 120.23 грн |
1000+ | 102.95 грн |
2000+ | 96.94 грн |
IRF6715MTRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 34A DIRECTFET
Description: MOSFET N-CH 25V 34A DIRECTFET
на замовлення 20 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 252.42 грн |
10+ | 218.32 грн |
IRF6717MTRPBF | ![]() |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 38A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 38A, 10V
Power Dissipation (Max): 2.8W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: DIRECTFET™ MX
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6750 pF @ 13 V
Description: MOSFET N-CH 25V 38A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 38A, 10V
Power Dissipation (Max): 2.8W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: DIRECTFET™ MX
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6750 pF @ 13 V
на замовлення 4499 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 204.52 грн |
10+ | 163.56 грн |
100+ | 130.18 грн |
500+ | 103.37 грн |
1000+ | 87.71 грн |
2000+ | 83.33 грн |
IRF6727MTRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 32A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 32A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: DIRECTFET™ MX
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6190 pF @ 15 V
Description: MOSFET N-CH 30V 32A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 32A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: DIRECTFET™ MX
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6190 pF @ 15 V
на замовлення 1738 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 231.89 грн |
10+ | 145.77 грн |
100+ | 101.29 грн |
500+ | 77.19 грн |
1000+ | 71.44 грн |
IRF6785MTRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 3.4A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MZ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 4.2A, 10V
Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DIRECTFET™ MZ
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Description: MOSFET N-CH 200V 3.4A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MZ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 4.2A, 10V
Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DIRECTFET™ MZ
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
на замовлення 9600 шт:
термін постачання 21-31 дні (днів)IRF7749L2TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 33A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 375A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 120A, 10V
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12320 pF @ 25 V
Description: MOSFET N-CH 60V 33A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 375A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 120A, 10V
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12320 pF @ 25 V
товар відсутній
IRF7779L2TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 375A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 40A, 10V
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V
Description: MOSFET N-CH 150V 375A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 40A, 10V
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V
на замовлення 5082 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 430.33 грн |
10+ | 348.13 грн |
100+ | 281.63 грн |
500+ | 234.93 грн |
1000+ | 201.16 грн |
2000+ | 189.41 грн |
IRF7946TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 90A DIRECTFET MX
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 90A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Supplier Device Package: DIRECTFET™ MX
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6852 pF @ 25 V
Description: MOSFET N-CH 40V 90A DIRECTFET MX
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 90A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Supplier Device Package: DIRECTFET™ MX
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6852 pF @ 25 V
товар відсутній
IRFHM4231TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 40A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.7W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 35µA
Supplier Device Package: 8-PQFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 13 V
Description: MOSFET N-CH 25V 40A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.7W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 35µA
Supplier Device Package: 8-PQFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 13 V
товар відсутній
IRFH4255DTRPBF |
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Виробник: Infineon Technologies
Description: MOSFET 2N-CH 25V 64A/105A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 31W, 38W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 64A, 105A
Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 13V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 35µA
Supplier Device Package: PQFN (5x6)
Description: MOSFET 2N-CH 25V 64A/105A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 31W, 38W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 64A, 105A
Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 13V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 35µA
Supplier Device Package: PQFN (5x6)
товар відсутній
IRFHM4231TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 40A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.7W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 35µA
Supplier Device Package: 8-PQFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 13 V
Description: MOSFET N-CH 25V 40A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.7W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 35µA
Supplier Device Package: 8-PQFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 13 V
товар відсутній
IRFH7185TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N CH 100V 19A 8QFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 50 V
Description: MOSFET N CH 100V 19A 8QFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 50 V
товар відсутній
IRFH7185TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N CH 100V 19A 8QFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 50 V
Description: MOSFET N CH 100V 19A 8QFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 50 V
товар відсутній
SAK-TC1767-256F133HR AD |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 133MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: TriCore™
Data Converters: A/D 4x10b, 32x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.42V ~ 1.58V
Connectivity: ASC, CANbus, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LQFP-176-5
Part Status: Obsolete
Number of I/O: 88
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 2MB FLASH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 133MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: TriCore™
Data Converters: A/D 4x10b, 32x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.42V ~ 1.58V
Connectivity: ASC, CANbus, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LQFP-176-5
Part Status: Obsolete
Number of I/O: 88
DigiKey Programmable: Not Verified
товар відсутній
IPB117N20NFDATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 84A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 84A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 100 V
Description: MOSFET N-CH 200V 84A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 84A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 100 V
на замовлення 3459 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 467.59 грн |
10+ | 386.21 грн |
100+ | 321.86 грн |
500+ | 266.52 грн |
IPP120N20NFDAKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 84A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 84A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 100 V
Description: MOSFET N-CH 200V 84A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 84A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 100 V
на замовлення 727 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 419.69 грн |
50+ | 320.05 грн |
100+ | 274.34 грн |
500+ | 228.85 грн |
TLE42662GHTMA2 |
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Виробник: Infineon Technologies
Description: IC REG LINEAR 5V 150MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4
Voltage - Output (Min/Fixed): 5V
Control Features: Inhibit
Part Status: Active
PSRR: 68dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 4 mA
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LINEAR 5V 150MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4
Voltage - Output (Min/Fixed): 5V
Control Features: Inhibit
Part Status: Active
PSRR: 68dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 4 mA
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
BFP760H6327XTSA1 |
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Виробник: Infineon Technologies
Description: RF TRANS NPN 4V 45GHZ SOT343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 16.5dB ~ 29dB
Power - Max: 240mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 4V
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 35mA, 3V
Frequency - Transition: 45GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 0.95dB @ 900MHz ~ 5.5GHz
Supplier Device Package: PG-SOT343-4-2
Part Status: Active
Description: RF TRANS NPN 4V 45GHZ SOT343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 16.5dB ~ 29dB
Power - Max: 240mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 4V
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 35mA, 3V
Frequency - Transition: 45GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 0.95dB @ 900MHz ~ 5.5GHz
Supplier Device Package: PG-SOT343-4-2
Part Status: Active
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 13.15 грн |
6000+ | 12.02 грн |
9000+ | 11.16 грн |
BFP843H6327XTSA1 |
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Виробник: Infineon Technologies
Description: RF TRANS NPN 2.25V SOT343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13.5dB ~ 24.5dB
Power - Max: 125mW
Current - Collector (Ic) (Max): 55mA
Voltage - Collector Emitter Breakdown (Max): 2.25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 15mA, 1.8V
Noise Figure (dB Typ @ f): 0.9dB ~ 1.85dB @ 450MHz ~ 10GHz
Supplier Device Package: PG-SOT343-4-3
Description: RF TRANS NPN 2.25V SOT343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13.5dB ~ 24.5dB
Power - Max: 125mW
Current - Collector (Ic) (Max): 55mA
Voltage - Collector Emitter Breakdown (Max): 2.25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 15mA, 1.8V
Noise Figure (dB Typ @ f): 0.9dB ~ 1.85dB @ 450MHz ~ 10GHz
Supplier Device Package: PG-SOT343-4-3
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 12.4 грн |
6000+ | 11.34 грн |
BFP843FH6327XTSA1 |
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Виробник: Infineon Technologies
Description: RF TRANS NPN 2.25V TSFP-4-1
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13.5dB ~ 25dB
Power - Max: 125mW
Current - Collector (Ic) (Max): 55mA
Voltage - Collector Emitter Breakdown (Max): 2.25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 15mA, 1.8V
Noise Figure (dB Typ @ f): 0.8dB ~ 1.7dB @ 450MHz ~ 10GHz
Supplier Device Package: PG-TSFP-4-1
Description: RF TRANS NPN 2.25V TSFP-4-1
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13.5dB ~ 25dB
Power - Max: 125mW
Current - Collector (Ic) (Max): 55mA
Voltage - Collector Emitter Breakdown (Max): 2.25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 15mA, 1.8V
Noise Figure (dB Typ @ f): 0.8dB ~ 1.7dB @ 450MHz ~ 10GHz
Supplier Device Package: PG-TSFP-4-1
товар відсутній
BGA524N6E6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC AMP GPS 1.55-1.615GHZ TSNP6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS/GNSS
Voltage - Supply: 1.5V ~ 3.3V
Gain: 19.6dB
Current - Supply: 2.5mA
Noise Figure: 0.55dB
P1dB: -16dBm
Test Frequency: 1.55GHz ~ 1.615GHz
Supplier Device Package: TSNP-6-2
Part Status: Active
Description: IC AMP GPS 1.55-1.615GHZ TSNP6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS/GNSS
Voltage - Supply: 1.5V ~ 3.3V
Gain: 19.6dB
Current - Supply: 2.5mA
Noise Figure: 0.55dB
P1dB: -16dBm
Test Frequency: 1.55GHz ~ 1.615GHz
Supplier Device Package: TSNP-6-2
Part Status: Active
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
15000+ | 18.81 грн |
BGA751N7E6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC AMP CELLULAR 850MHZ TSNP7-1
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 850MHz
RF Type: Cellular
Voltage - Supply: 2.6V ~ 3V
Gain: 15.3dB
Current - Supply: 3.3mA
Noise Figure: 1.1dB
Test Frequency: 850MHz
Supplier Device Package: TSNP-7-1
Description: IC AMP CELLULAR 850MHZ TSNP7-1
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 850MHz
RF Type: Cellular
Voltage - Supply: 2.6V ~ 3V
Gain: 15.3dB
Current - Supply: 3.3mA
Noise Figure: 1.1dB
Test Frequency: 850MHz
Supplier Device Package: TSNP-7-1
товар відсутній
BGA777N7E6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC AMP UMTS 2.3-2.7GHZ TSNP7-1
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 2.3GHz ~ 2.7GHz
RF Type: UMTS
Voltage - Supply: 2.6V ~ 3V
Gain: 16dB
Current - Supply: 4.2mA
Noise Figure: 1.2dB
Test Frequency: 2.3GHz ~ 2.7MHz
Supplier Device Package: TSNP-7-1
Description: IC AMP UMTS 2.3-2.7GHZ TSNP7-1
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 2.3GHz ~ 2.7GHz
RF Type: UMTS
Voltage - Supply: 2.6V ~ 3V
Gain: 16dB
Current - Supply: 4.2mA
Noise Figure: 1.2dB
Test Frequency: 2.3GHz ~ 2.7MHz
Supplier Device Package: TSNP-7-1
товар відсутній
BGA824N6E6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC AMP GALI 1.55-1.615GHZ TSNP6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: Galileo, GLONASS, GPS
Voltage - Supply: 1.5V ~ 3.3V
Gain: 17dB
Current - Supply: 3.8mA
Noise Figure: 0.55dB
P1dB: -9dBm
Test Frequency: 1.55GHz ~ 1.615GHz
Supplier Device Package: TSNP-6-2
Description: IC AMP GALI 1.55-1.615GHZ TSNP6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: Galileo, GLONASS, GPS
Voltage - Supply: 1.5V ~ 3.3V
Gain: 17dB
Current - Supply: 3.8mA
Noise Figure: 0.55dB
P1dB: -9dBm
Test Frequency: 1.55GHz ~ 1.615GHz
Supplier Device Package: TSNP-6-2
товар відсутній
BGM1043N7E6327XUSA1 |
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Виробник: Infineon Technologies
Description: IC AMP GALI 1575.42MHZ TSNP7-10
Packaging: Tape & Reel (TR)
Package / Case: 6-WFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1575.42MHz
RF Type: Galileo, GLONASS, GPS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 14.6dB, 15.1dB
Current - Supply: 4mA
Noise Figure: 1.5dB
P1dB: -6dBm
Test Frequency: 1575.42MHz, 1598.06MHz ~ 1605.38MHz
Supplier Device Package: TSNP-7-10
Description: IC AMP GALI 1575.42MHZ TSNP7-10
Packaging: Tape & Reel (TR)
Package / Case: 6-WFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1575.42MHz
RF Type: Galileo, GLONASS, GPS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 14.6dB, 15.1dB
Current - Supply: 4mA
Noise Figure: 1.5dB
P1dB: -6dBm
Test Frequency: 1575.42MHz, 1598.06MHz ~ 1605.38MHz
Supplier Device Package: TSNP-7-10
товар відсутній
BGSF18DM20E6727XUMA1 |
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Виробник: Infineon Technologies
Description: IC SWITCH SP8T HP SPI 20PIN
Description: IC SWITCH SP8T HP SPI 20PIN
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)ESD101B102ELE6327XTMA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 5.5VWM 30VC TSLP-2-20
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-TSLP-2-20
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.3V (Typ)
Voltage - Clamping (Max) @ Ipp: 30V
Power Line Protection: No
Part Status: Not For New Designs
Description: TVS DIODE 5.5VWM 30VC TSLP-2-20
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-TSLP-2-20
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.3V (Typ)
Voltage - Clamping (Max) @ Ipp: 30V
Power Line Protection: No
Part Status: Not For New Designs
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
15000+ | 6.36 грн |
ESD103B102ELE6327XTMA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 15VWM 48VC TSLP-2-20
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.13pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (100ns)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: PG-TSLP-2-20
Bidirectional Channels: 1
Voltage - Breakdown (Min): 21V (Typ)
Voltage - Clamping (Max) @ Ipp: 48V (Typ)
Power Line Protection: No
Part Status: Not For New Designs
Description: TVS DIODE 15VWM 48VC TSLP-2-20
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.13pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (100ns)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: PG-TSLP-2-20
Bidirectional Channels: 1
Voltage - Breakdown (Min): 21V (Typ)
Voltage - Clamping (Max) @ Ipp: 48V (Typ)
Power Line Protection: No
Part Status: Not For New Designs
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
15000+ | 6.36 грн |
30000+ | 6.05 грн |
ESD105B102ELE6327XTMA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 5.5VWM 14VC TSLP-2-20
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-TSLP-2-20
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.1V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 70W
Power Line Protection: No
Part Status: Not For New Designs
Description: TVS DIODE 5.5VWM 14VC TSLP-2-20
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-TSLP-2-20
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.1V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 70W
Power Line Protection: No
Part Status: Not For New Designs
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
15000+ | 6.38 грн |
ESD110B102ELSE6327XTSA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 18.5VWM 17VC TSSLP-2-4
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 85°C (TA)
Applications: RF Antenna
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 18.5V (Max)
Supplier Device Package: PG-TSSLP-2-4
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 17V (Typ)
Power Line Protection: No
Description: TVS DIODE 18.5VWM 17VC TSSLP-2-4
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 85°C (TA)
Applications: RF Antenna
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 18.5V (Max)
Supplier Device Package: PG-TSSLP-2-4
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 17V (Typ)
Power Line Protection: No
товар відсутній
ESD112B102ELE6327XTMA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 5.3VWM 21VC TSLP-2-20
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.23pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: PG-TSLP-2-20
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 21V
Power Line Protection: No
Part Status: Not For New Designs
Description: TVS DIODE 5.3VWM 21VC TSLP-2-20
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.23pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: PG-TSLP-2-20
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 21V
Power Line Protection: No
Part Status: Not For New Designs
на замовлення 105000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
15000+ | 5.9 грн |
30000+ | 5.61 грн |
75000+ | 4.77 грн |
105000+ | 4.3 грн |
ESD113B102ELSE6327XTSA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 3.6VWM 8VC TSSLP-2-4
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: HDMI
Capacitance @ Frequency: 0.22pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: PG-TSSLP-2-4
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 8V
Power Line Protection: No
Part Status: Not For New Designs
Description: TVS DIODE 3.6VWM 8VC TSSLP-2-4
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: HDMI
Capacitance @ Frequency: 0.22pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: PG-TSSLP-2-4
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 8V
Power Line Protection: No
Part Status: Not For New Designs
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
15000+ | 6 грн |
ESD203B102ELSE6327XTSA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 13.2VWM 23VC TSSLP-2-4
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 13.2V (Max)
Supplier Device Package: PG-TSSLP-2-4
Bidirectional Channels: 1
Voltage - Breakdown (Min): 13.7V
Voltage - Clamping (Max) @ Ipp: 23V
Power - Peak Pulse: 115W
Power Line Protection: No
Part Status: Not For New Designs
Description: TVS DIODE 13.2VWM 23VC TSSLP-2-4
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 13.2V (Max)
Supplier Device Package: PG-TSSLP-2-4
Bidirectional Channels: 1
Voltage - Breakdown (Min): 13.7V
Voltage - Clamping (Max) @ Ipp: 23V
Power - Peak Pulse: 115W
Power Line Protection: No
Part Status: Not For New Designs
товар відсутній
ESD204B102ELE6327XTMA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 14VWM 28VC TSLP-2-20
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: PG-TSLP-2-20
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.5V
Voltage - Clamping (Max) @ Ipp: 28V
Power Line Protection: No
Description: TVS DIODE 14VWM 28VC TSLP-2-20
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: PG-TSLP-2-20
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.5V
Voltage - Clamping (Max) @ Ipp: 28V
Power Line Protection: No
товар відсутній
ESD206B102ELE6327XTMA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 5.5V 9.6V TSLP-2-19
Description: TVS DIODE 5.5V 9.6V TSLP-2-19
товар відсутній
ESD207B102ELSE6327XTSA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 3.3VWM 8.1VC TSSLP-2-3
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 14pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSSLP-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.65V
Voltage - Clamping (Max) @ Ipp: 8.1V
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 3.3VWM 8.1VC TSSLP-2-3
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 14pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSSLP-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.65V
Voltage - Clamping (Max) @ Ipp: 8.1V
Power Line Protection: No
Part Status: Obsolete
товар відсутній
ESD208B102ELE6327XTMA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 3.3VWM 8.1VC TSLP-2-19
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSLP-2-19
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.65V
Voltage - Clamping (Max) @ Ipp: 8.1V
Power - Peak Pulse: 30W
Power Line Protection: No
Part Status: Not For New Designs
Description: TVS DIODE 3.3VWM 8.1VC TSLP-2-19
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSLP-2-19
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.65V
Voltage - Clamping (Max) @ Ipp: 8.1V
Power - Peak Pulse: 30W
Power Line Protection: No
Part Status: Not For New Designs
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
15000+ | 3.47 грн |
BGT24MR2E6327XUMA1 |
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Виробник: Infineon Technologies
Description: IC MMIC 24GHZ TWIN IQ RX 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Function: Receiver
Frequency: 24GHz
RF Type: General Purpose
Supplier Device Package: PG-VQFN-32-9
Part Status: Active
Description: IC MMIC 24GHZ TWIN IQ RX 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Function: Receiver
Frequency: 24GHz
RF Type: General Purpose
Supplier Device Package: PG-VQFN-32-9
Part Status: Active
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1000+ | 380.53 грн |
BGT24MTR11E6327XUMA1 |
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Виробник: Infineon Technologies
Description: IC MMIC 24GHZ TWIN IQ RX 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Function: Transceiver
Frequency: 24GHz ~ 26GHz
RF Type: General Purpose
Supplier Device Package: PG-VQFN-32-9
Part Status: Active
Description: IC MMIC 24GHZ TWIN IQ RX 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Function: Transceiver
Frequency: 24GHz ~ 26GHz
RF Type: General Purpose
Supplier Device Package: PG-VQFN-32-9
Part Status: Active
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1000+ | 591.22 грн |
BGT24MTR12E6327XUMA1 |
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Виробник: Infineon Technologies
Description: IC MMIC 24GHZ TWIN IQ RX 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Function: Transceiver
Frequency: 24GHz ~ 24.25GHz
RF Type: General Purpose
Supplier Device Package: PG-VQFN-32-9
Part Status: Active
Description: IC MMIC 24GHZ TWIN IQ RX 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Function: Transceiver
Frequency: 24GHz ~ 24.25GHz
RF Type: General Purpose
Supplier Device Package: PG-VQFN-32-9
Part Status: Active
товар відсутній
BAT1502LRHE6327XTSA1 |
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Виробник: Infineon Technologies
Description: RF DIODE SCHOTTKY 4V 100MW TSLP2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-TSLP-2-7
Part Status: Active
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
Description: RF DIODE SCHOTTKY 4V 100MW TSLP2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-TSLP-2-7
Part Status: Active
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
на замовлення 12127 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 66.91 грн |
10+ | 52.49 грн |
100+ | 40.82 грн |
500+ | 32.47 грн |
1000+ | 26.45 грн |
2000+ | 24.9 грн |
5000+ | 23.33 грн |
BFP760H6327XTSA1 |
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Виробник: Infineon Technologies
Description: RF TRANS NPN 4V 45GHZ SOT343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 16.5dB ~ 29dB
Power - Max: 240mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 4V
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 35mA, 3V
Frequency - Transition: 45GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 0.95dB @ 900MHz ~ 5.5GHz
Supplier Device Package: PG-SOT343-4-2
Part Status: Active
Description: RF TRANS NPN 4V 45GHZ SOT343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 16.5dB ~ 29dB
Power - Max: 240mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 4V
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 35mA, 3V
Frequency - Transition: 45GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 0.95dB @ 900MHz ~ 5.5GHz
Supplier Device Package: PG-SOT343-4-2
Part Status: Active
на замовлення 14282 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 38.78 грн |
10+ | 32.07 грн |
100+ | 22.32 грн |
500+ | 16.36 грн |
1000+ | 13.29 грн |
BFP843H6327XTSA1 |
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Виробник: Infineon Technologies
Description: RF TRANS NPN 2.25V SOT343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13.5dB ~ 24.5dB
Power - Max: 125mW
Current - Collector (Ic) (Max): 55mA
Voltage - Collector Emitter Breakdown (Max): 2.25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 15mA, 1.8V
Noise Figure (dB Typ @ f): 0.9dB ~ 1.85dB @ 450MHz ~ 10GHz
Supplier Device Package: PG-SOT343-4-3
Description: RF TRANS NPN 2.25V SOT343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13.5dB ~ 24.5dB
Power - Max: 125mW
Current - Collector (Ic) (Max): 55mA
Voltage - Collector Emitter Breakdown (Max): 2.25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 15mA, 1.8V
Noise Figure (dB Typ @ f): 0.9dB ~ 1.85dB @ 450MHz ~ 10GHz
Supplier Device Package: PG-SOT343-4-3
на замовлення 9027 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 36.49 грн |
10+ | 30.31 грн |
100+ | 21.05 грн |
500+ | 15.42 грн |
1000+ | 12.54 грн |
BFP843FH6327XTSA1 |
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Виробник: Infineon Technologies
Description: RF TRANS NPN 2.25V TSFP-4-1
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13.5dB ~ 25dB
Power - Max: 125mW
Current - Collector (Ic) (Max): 55mA
Voltage - Collector Emitter Breakdown (Max): 2.25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 15mA, 1.8V
Noise Figure (dB Typ @ f): 0.8dB ~ 1.7dB @ 450MHz ~ 10GHz
Supplier Device Package: PG-TSFP-4-1
Description: RF TRANS NPN 2.25V TSFP-4-1
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13.5dB ~ 25dB
Power - Max: 125mW
Current - Collector (Ic) (Max): 55mA
Voltage - Collector Emitter Breakdown (Max): 2.25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 15mA, 1.8V
Noise Figure (dB Typ @ f): 0.8dB ~ 1.7dB @ 450MHz ~ 10GHz
Supplier Device Package: PG-TSFP-4-1
на замовлення 152 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 36.49 грн |
10+ | 29.72 грн |
100+ | 20.7 грн |
BFR720L3RHE6327XTSA1 |
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Виробник: Infineon Technologies
Description: TRANS RF NPN 4V 20MA TSLP-3
Description: TRANS RF NPN 4V 20MA TSLP-3
товар відсутній
BGA524N6E6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC AMP GPS 1.55-1.615GHZ TSNP6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS/GNSS
Voltage - Supply: 1.5V ~ 3.3V
Gain: 19.6dB
Current - Supply: 2.5mA
Noise Figure: 0.55dB
P1dB: -16dBm
Test Frequency: 1.55GHz ~ 1.615GHz
Supplier Device Package: TSNP-6-2
Part Status: Active
Description: IC AMP GPS 1.55-1.615GHZ TSNP6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS/GNSS
Voltage - Supply: 1.5V ~ 3.3V
Gain: 19.6dB
Current - Supply: 2.5mA
Noise Figure: 0.55dB
P1dB: -16dBm
Test Frequency: 1.55GHz ~ 1.615GHz
Supplier Device Package: TSNP-6-2
Part Status: Active
на замовлення 45890 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 51.7 грн |
10+ | 44.08 грн |
25+ | 39.77 грн |
100+ | 32.66 грн |
250+ | 28.66 грн |
500+ | 25.33 грн |
1000+ | 19.67 грн |
5000+ | 17.44 грн |
BGA751N7E6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC AMP CELLULAR 850MHZ TSNP7-1
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 850MHz
RF Type: Cellular
Voltage - Supply: 2.6V ~ 3V
Gain: 15.3dB
Current - Supply: 3.3mA
Noise Figure: 1.1dB
Test Frequency: 850MHz
Supplier Device Package: TSNP-7-1
Description: IC AMP CELLULAR 850MHZ TSNP7-1
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 850MHz
RF Type: Cellular
Voltage - Supply: 2.6V ~ 3V
Gain: 15.3dB
Current - Supply: 3.3mA
Noise Figure: 1.1dB
Test Frequency: 850MHz
Supplier Device Package: TSNP-7-1
товар відсутній
BGA777N7E6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC AMP UMTS 2.3-2.7GHZ TSNP7-1
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 2.3GHz ~ 2.7GHz
RF Type: UMTS
Voltage - Supply: 2.6V ~ 3V
Gain: 16dB
Current - Supply: 4.2mA
Noise Figure: 1.2dB
Test Frequency: 2.3GHz ~ 2.7MHz
Supplier Device Package: TSNP-7-1
Description: IC AMP UMTS 2.3-2.7GHZ TSNP7-1
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 2.3GHz ~ 2.7GHz
RF Type: UMTS
Voltage - Supply: 2.6V ~ 3V
Gain: 16dB
Current - Supply: 4.2mA
Noise Figure: 1.2dB
Test Frequency: 2.3GHz ~ 2.7MHz
Supplier Device Package: TSNP-7-1
на замовлення 6455 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 85.91 грн |
10+ | 73.29 грн |
25+ | 66.16 грн |
100+ | 54.34 грн |
250+ | 47.69 грн |
500+ | 42.14 грн |
1000+ | 32.72 грн |
BGA824N6E6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC AMP GALI 1.55-1.615GHZ TSNP6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: Galileo, GLONASS, GPS
Voltage - Supply: 1.5V ~ 3.3V
Gain: 17dB
Current - Supply: 3.8mA
Noise Figure: 0.55dB
P1dB: -9dBm
Test Frequency: 1.55GHz ~ 1.615GHz
Supplier Device Package: TSNP-6-2
Description: IC AMP GALI 1.55-1.615GHZ TSNP6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: Galileo, GLONASS, GPS
Voltage - Supply: 1.5V ~ 3.3V
Gain: 17dB
Current - Supply: 3.8mA
Noise Figure: 0.55dB
P1dB: -9dBm
Test Frequency: 1.55GHz ~ 1.615GHz
Supplier Device Package: TSNP-6-2
товар відсутній
BGSF18DM20E6727XUMA1 |
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Виробник: Infineon Technologies
Description: IC SWITCH SP8T HP SPI 20SMD
Description: IC SWITCH SP8T HP SPI 20SMD
товар відсутній
ESD101B102ELE6327XTMA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 5.5VWM 30VC TSLP-2-20
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-TSLP-2-20
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.3V (Typ)
Voltage - Clamping (Max) @ Ipp: 30V
Power Line Protection: No
Part Status: Not For New Designs
Description: TVS DIODE 5.5VWM 30VC TSLP-2-20
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-TSLP-2-20
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.3V (Typ)
Voltage - Clamping (Max) @ Ipp: 30V
Power Line Protection: No
Part Status: Not For New Designs
на замовлення 25395 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 33.45 грн |
13+ | 22.7 грн |
100+ | 11.47 грн |
500+ | 9.53 грн |
1000+ | 7.42 грн |
2000+ | 6.64 грн |
5000+ | 6.39 грн |
ESD103B102ELE6327XTMA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 15VWM 48VC TSLP-2-20
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.13pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (100ns)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: PG-TSLP-2-20
Bidirectional Channels: 1
Voltage - Breakdown (Min): 21V (Typ)
Voltage - Clamping (Max) @ Ipp: 48V (Typ)
Power Line Protection: No
Part Status: Not For New Designs
Description: TVS DIODE 15VWM 48VC TSLP-2-20
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.13pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (100ns)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: PG-TSLP-2-20
Bidirectional Channels: 1
Voltage - Breakdown (Min): 21V (Typ)
Voltage - Clamping (Max) @ Ipp: 48V (Typ)
Power Line Protection: No
Part Status: Not For New Designs
на замовлення 30358 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 33.45 грн |
13+ | 22.7 грн |
100+ | 11.47 грн |
500+ | 9.53 грн |
1000+ | 7.42 грн |
2000+ | 6.64 грн |
5000+ | 6.39 грн |