Продукція > ALLIANCE MEMORY > Всі товари виробника ALLIANCE MEMORY (3685) > Сторінка 17 з 62
Фото | Назва | Виробник | Інформація |
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AS4C4M16S-6TAN | Alliance Memory |
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на замовлення 90 шт: термін постачання 21-30 дні (днів) |
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AS4C4M16S-6TCN | Alliance Memory |
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на замовлення 1049 шт: термін постачання 21-30 дні (днів) |
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AS4C4M16SA-5TCNTR | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 4Mx16bit; 3.3V; 200MHz; 4.5ns; TSOP54 II; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Clock frequency: 200MHz Access time: 4.5ns Case: TSOP54 II Memory capacity: 64Mb Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel Operating voltage: 3.3V |
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AS4C4M16SA-6BAN | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54 Mounting: SMD Case: FBGA54 Kind of package: in-tray Operating temperature: -40...105°C Memory: 64Mb DRAM Operating voltage: 3.3V Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Access time: 5.4ns Clock frequency: 166MHz |
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AS4C4M16SA-6BANTR | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54 Mounting: SMD Case: FBGA54 Kind of package: reel Operating temperature: -40...105°C Memory: 64Mb DRAM Operating voltage: 3.3V Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Access time: 5.4ns Clock frequency: 166MHz |
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AS4C4M16SA-6BIN | ALLIANCE MEMORY |
![]() ![]() Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54 Mounting: SMD Case: FBGA54 Kind of package: in-tray Operating temperature: -40...85°C Memory: 64Mb DRAM Operating voltage: 3.3V Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Access time: 5.4ns Clock frequency: 166MHz |
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AS4C4M16SA-6BINTR | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54 Mounting: SMD Case: FBGA54 Kind of package: reel Operating temperature: -40...85°C Memory: 64Mb DRAM Operating voltage: 3.3V Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Access time: 5.4ns Clock frequency: 166MHz |
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AS4C4M16SA-6TAN | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP54 II Mounting: SMD Case: TSOP54 II Kind of package: in-tray Operating temperature: -40...105°C Memory: 64Mb DRAM Operating voltage: 3.3V Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Access time: 5.4ns Clock frequency: 166MHz |
товар відсутній |
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AS4C4M16SA-6TANTR | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP54 II Mounting: SMD Case: TSOP54 II Kind of package: reel Operating temperature: -40...105°C Memory: 64Mb DRAM Operating voltage: 3.3V Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Access time: 5.4ns Clock frequency: 166MHz |
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AS4C4M16SA-6TCN | ALLIANCE MEMORY |
![]() ![]() Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 4Mx16bit Clock frequency: 166MHz Access time: 5.4ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 3.3V |
на замовлення 124 шт: термін постачання 21-30 дні (днів) |
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AS4C4M16SA-6TCNTR | ALLIANCE MEMORY |
![]() ![]() Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP54 II Mounting: SMD Case: TSOP54 II Kind of package: reel Operating temperature: 0...70°C Kind of interface: parallel Memory: 64Mb DRAM Operating voltage: 3.3V Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Access time: 5.4ns Clock frequency: 166MHz |
товар відсутній |
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AS4C4M16SA-6TINTR | ALLIANCE MEMORY |
![]() ![]() Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 166MHz; 6ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 4Mx16bit Clock frequency: 166MHz Access time: 6ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel Operating voltage: 3.3V |
на замовлення 3737 шт: термін постачання 21-30 дні (днів) |
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AS4C4M16SA-7B2CN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; FBGA60; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Clock frequency: 143MHz Access time: 5.4s Case: FBGA60 Memory capacity: 64Mb Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray Operating voltage: 3.3V |
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AS4C4M16SA-7B2CNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; FBGA60; 0÷70°C; reel Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Clock frequency: 143MHz Access time: 5.4s Case: FBGA60 Memory capacity: 64Mb Mounting: SMD Operating temperature: 0...70°C Kind of package: reel Operating voltage: 3.3V |
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AS4C4M16SA-7BCN | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; FBGA54; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Clock frequency: 143MHz Access time: 5.4s Case: FBGA54 Memory capacity: 64Mb Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray Operating voltage: 3.3V |
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AS4C4M16SA-7BCNTR | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; FBGA54; 0÷70°C; reel Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Clock frequency: 143MHz Access time: 5.4s Case: FBGA54 Memory capacity: 64Mb Mounting: SMD Operating temperature: 0...70°C Kind of package: reel Operating voltage: 3.3V |
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AS4C4M16SA-7TCN | ALLIANCE MEMORY |
![]() ![]() Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 143MHz; 5.4s; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 4Mx16bit Clock frequency: 143MHz Access time: 5.4s Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 3.3V |
на замовлення 3144 шт: термін постачання 21-30 дні (днів) |
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AS4C4M16SA-7TCNTR | ALLIANCE MEMORY |
![]() ![]() Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 143MHz; 7ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 4Mx16bit Clock frequency: 143MHz Access time: 7ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel Operating voltage: 3.3V |
на замовлення 1431 шт: термін постачання 21-30 дні (днів) |
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AS4C4M16SA-5TCN | Alliance Memory |
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на замовлення 117 шт: термін постачання 21-30 дні (днів) |
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AS4C4M16SA-5TCNTR | Alliance Memory |
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AS4C4M16SA-5TCNTR | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 4Mx16bit; 3.3V; 200MHz; 4.5ns; TSOP54 II; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Clock frequency: 200MHz Access time: 4.5ns Case: TSOP54 II Memory capacity: 64Mb Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel Operating voltage: 3.3V |
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AS4C4M16SA-6BAN | ALLIANCE MEMORY |
![]() tariffCode: 85423231 DRAM-Ausführung: SDRAM rohsCompliant: YES IC-Montage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES IC-Gehäuse / Bauform: FBGA Speicherdichte: 64Mbit usEccn: EAR99 Versorgungsspannung, nom.: 3.3V Taktfrequenz, max.: 166MHz Betriebstemperatur, min.: -40°C euEccn: NLR Anzahl der Pins: 54Pin(s) Produktpalette: - productTraceability: No Betriebstemperatur, max.: 105°C Speicherkonfiguration: 4M x 16 Bit SVHC: No SVHC (14-Jun-2023) |
на замовлення 316 шт: термін постачання 21-31 дні (днів) |
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AS4C4M16SA-6BAN | Alliance Memory |
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на замовлення 345 шт: термін постачання 21-30 дні (днів) |
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AS4C4M16SA-6BAN | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54 Mounting: SMD Case: FBGA54 Kind of package: in-tray Operating temperature: -40...105°C Memory: 64Mb DRAM Operating voltage: 3.3V Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Access time: 5.4ns Clock frequency: 166MHz кількість в упаковці: 1 шт |
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AS4C4M16SA-6BANTR | Alliance Memory |
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AS4C4M16SA-6BANTR | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54 Mounting: SMD Case: FBGA54 Kind of package: reel Operating temperature: -40...105°C Memory: 64Mb DRAM Operating voltage: 3.3V Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Access time: 5.4ns Clock frequency: 166MHz кількість в упаковці: 2500 шт |
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AS4C4M16SA-6BIN | Alliance Memory |
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на замовлення 1390 шт: термін постачання 21-30 дні (днів) |
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AS4C4M16SA-6BIN | ALLIANCE MEMORY |
![]() tariffCode: 85423231 DRAM-Ausführung: SDRAM rohsCompliant: YES IC-Montage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES IC-Gehäuse / Bauform: FBGA Speicherdichte: 64Mbit usEccn: EAR99 Versorgungsspannung, nom.: 3.3V Taktfrequenz, max.: 166MHz Betriebstemperatur, min.: -40°C euEccn: NLR Anzahl der Pins: 54Pin(s) Produktpalette: - productTraceability: No Betriebstemperatur, max.: 85°C Speicherkonfiguration: 4M x 16 Bit SVHC: No SVHC (14-Jun-2023) |
на замовлення 141 шт: термін постачання 21-31 дні (днів) |
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AS4C4M16SA-6BIN | ALLIANCE MEMORY |
![]() ![]() Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54 Mounting: SMD Case: FBGA54 Kind of package: in-tray Operating temperature: -40...85°C Memory: 64Mb DRAM Operating voltage: 3.3V Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Access time: 5.4ns Clock frequency: 166MHz кількість в упаковці: 348 шт |
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AS4C4M16SA-6BIN | Alliance Memory |
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на замовлення 226 шт: термін постачання 3-4 дні (днів) |
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AS4C4M16SA-6BINTR | Alliance Memory |
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на замовлення 7700 шт: термін постачання 21-30 дні (днів) |
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AS4C4M16SA-6BINTR | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54 Mounting: SMD Case: FBGA54 Kind of package: reel Operating temperature: -40...85°C Memory: 64Mb DRAM Operating voltage: 3.3V Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Access time: 5.4ns Clock frequency: 166MHz кількість в упаковці: 2500 шт |
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AS4C4M16SA-6TAN | Alliance Memory |
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на замовлення 209 шт: термін постачання 21-30 дні (днів) |
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AS4C4M16SA-6TAN | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP54 II Mounting: SMD Case: TSOP54 II Kind of package: in-tray Operating temperature: -40...105°C Memory: 64Mb DRAM Operating voltage: 3.3V Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Access time: 5.4ns Clock frequency: 166MHz кількість в упаковці: 1 шт |
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AS4C4M16SA-6TANTR | Alliance Memory |
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AS4C4M16SA-6TANTR | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP54 II Mounting: SMD Case: TSOP54 II Kind of package: reel Operating temperature: -40...105°C Memory: 64Mb DRAM Operating voltage: 3.3V Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Access time: 5.4ns Clock frequency: 166MHz кількість в упаковці: 1000 шт |
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AS4C4M16SA-6TCN | Alliance Memory |
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на замовлення 31 шт: термін постачання 21-30 дні (днів) |
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AS4C4M16SA-6TCN | ALLIANCE MEMORY |
![]() ![]() Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 4Mx16bit Clock frequency: 166MHz Access time: 5.4ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 3.3V кількість в упаковці: 1 шт |
на замовлення 124 шт: термін постачання 14-21 дні (днів) |
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AS4C4M16SA-6TCNTR | Alliance Memory |
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на замовлення 621 шт: термін постачання 21-30 дні (днів) |
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AS4C4M16SA-6TCNTR | ALLIANCE MEMORY |
![]() ![]() Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP54 II Mounting: SMD Case: TSOP54 II Kind of package: reel Operating temperature: 0...70°C Kind of interface: parallel Memory: 64Mb DRAM Operating voltage: 3.3V Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Access time: 5.4ns Clock frequency: 166MHz кількість в упаковці: 1000 шт |
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AS4C4M16SA-6TIN | Alliance Memory |
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на замовлення 906 шт: термін постачання 21-30 дні (днів) |
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AS4C4M16SA-6TIN | ALLIANCE MEMORY |
![]() tariffCode: 85423231 DRAM-Ausführung: SDRAM rohsCompliant: YES IC-Montage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES IC-Gehäuse / Bauform: TSOP-II Speicherdichte: 64Mbit usEccn: EAR99 Versorgungsspannung, nom.: 3.3V Taktfrequenz, max.: 166MHz Betriebstemperatur, min.: -40°C euEccn: NLR Anzahl der Pins: 54Pin(s) Produktpalette: - productTraceability: No Betriebstemperatur, max.: 85°C Speicherkonfiguration: 4M x 16 Bit SVHC: No SVHC (14-Jun-2023) |
на замовлення 86 шт: термін постачання 21-31 дні (днів) |
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AS4C4M16SA-6TINTR | Alliance Memory |
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на замовлення 550 шт: термін постачання 21-30 дні (днів) |
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AS4C4M16SA-6TINTR | ALLIANCE MEMORY |
![]() ![]() Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 166MHz; 6ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 4Mx16bit Clock frequency: 166MHz Access time: 6ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel Operating voltage: 3.3V кількість в упаковці: 1 шт |
на замовлення 3737 шт: термін постачання 14-21 дні (днів) |
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AS4C4M16SA-7B2CN | Alliance Memory |
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на замовлення 117 шт: термін постачання 21-30 дні (днів) |
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AS4C4M16SA-7B2CN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; FBGA60; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Clock frequency: 143MHz Access time: 5.4s Case: FBGA60 Memory capacity: 64Mb Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray Operating voltage: 3.3V |
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AS4C4M16SA-7B2CNTR | Alliance Memory |
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AS4C4M16SA-7B2CNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; FBGA60; 0÷70°C; reel Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Clock frequency: 143MHz Access time: 5.4s Case: FBGA60 Memory capacity: 64Mb Mounting: SMD Operating temperature: 0...70°C Kind of package: reel Operating voltage: 3.3V |
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AS4C4M16SA-7BCN | Alliance Memory |
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на замовлення 175 шт: термін постачання 21-30 дні (днів) |
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AS4C4M16SA-7BCN | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; FBGA54; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Clock frequency: 143MHz Access time: 5.4s Case: FBGA54 Memory capacity: 64Mb Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray Operating voltage: 3.3V |
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AS4C4M16SA-7BCN | Alliance Memory |
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на замовлення 1 шт: термін постачання 3-4 дні (днів) |
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AS4C4M16SA-7BCNTR | Alliance Memory |
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AS4C4M16SA-7BCNTR | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; FBGA54; 0÷70°C; reel Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Clock frequency: 143MHz Access time: 5.4s Case: FBGA54 Memory capacity: 64Mb Mounting: SMD Operating temperature: 0...70°C Kind of package: reel Operating voltage: 3.3V |
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AS4C4M16SA-7TCN | ALLIANCE MEMORY |
![]() tariffCode: 85423231 DRAM-Ausführung: SDRAM rohsCompliant: YES IC-Montage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES IC-Gehäuse / Bauform: TSOP-II Speicherdichte: 64Mbit usEccn: EAR99 Versorgungsspannung, nom.: 3.3V Taktfrequenz, max.: 143MHz Betriebstemperatur, min.: 0°C euEccn: NLR Anzahl der Pins: 54Pin(s) Produktpalette: - productTraceability: No Betriebstemperatur, max.: 70°C Speicherkonfiguration: 4M x 16 Bit SVHC: No SVHC (14-Jun-2023) |
на замовлення 98 шт: термін постачання 21-31 дні (днів) |
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AS4C4M16SA-7TCN | Alliance Memory |
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на замовлення 2665 шт: термін постачання 21-30 дні (днів) |
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AS4C4M16SA-7TCN | ALLIANCE MEMORY |
![]() ![]() Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 143MHz; 5.4s; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 4Mx16bit Clock frequency: 143MHz Access time: 5.4s Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 3.3V кількість в упаковці: 1 шт |
на замовлення 3144 шт: термін постачання 14-21 дні (днів) |
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AS4C4M16SA-7TCNTR | Alliance Memory |
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на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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AS4C4M16SA-7TCNTR | ALLIANCE MEMORY |
![]() ![]() Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 143MHz; 7ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 4Mx16bit Clock frequency: 143MHz Access time: 7ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel Operating voltage: 3.3V кількість в упаковці: 1 шт |
на замовлення 1431 шт: термін постачання 14-21 дні (днів) |
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AS4C4M16SB-6TIN | Alliance Memory |
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на замовлення 3392 шт: термін постачання 21-30 дні (днів) |
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AS4C4M32D1A-5BCN | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 128Mb DRAM Memory organisation: 4Mx32bit Clock frequency: 200MHz Access time: 15ns Case: BGA144 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V |
товар відсутній |
AS4C4M16S-6TAN |
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Виробник: Alliance Memory
DRAM 64Mb, 3.3V, 166Mhz 4M x 16 SDRAM
DRAM 64Mb, 3.3V, 166Mhz 4M x 16 SDRAM
на замовлення 90 шт:
термін постачання 21-30 дні (днів)AS4C4M16S-6TCN |
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Виробник: Alliance Memory
DRAM 64M SDRAM 4M X 16 166MHz
DRAM 64M SDRAM 4M X 16 166MHz
на замовлення 1049 шт:
термін постачання 21-30 дні (днів)AS4C4M16SA-5TCNTR |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 200MHz; 4.5ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 200MHz
Access time: 4.5ns
Case: TSOP54 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 200MHz; 4.5ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 200MHz
Access time: 4.5ns
Case: TSOP54 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C4M16SA-6BAN |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54
Mounting: SMD
Case: FBGA54
Kind of package: in-tray
Operating temperature: -40...105°C
Memory: 64Mb DRAM
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Access time: 5.4ns
Clock frequency: 166MHz
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54
Mounting: SMD
Case: FBGA54
Kind of package: in-tray
Operating temperature: -40...105°C
Memory: 64Mb DRAM
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Access time: 5.4ns
Clock frequency: 166MHz
товар відсутній
AS4C4M16SA-6BANTR |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54
Mounting: SMD
Case: FBGA54
Kind of package: reel
Operating temperature: -40...105°C
Memory: 64Mb DRAM
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Access time: 5.4ns
Clock frequency: 166MHz
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54
Mounting: SMD
Case: FBGA54
Kind of package: reel
Operating temperature: -40...105°C
Memory: 64Mb DRAM
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Access time: 5.4ns
Clock frequency: 166MHz
товар відсутній
AS4C4M16SA-6BIN |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54
Mounting: SMD
Case: FBGA54
Kind of package: in-tray
Operating temperature: -40...85°C
Memory: 64Mb DRAM
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Access time: 5.4ns
Clock frequency: 166MHz
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54
Mounting: SMD
Case: FBGA54
Kind of package: in-tray
Operating temperature: -40...85°C
Memory: 64Mb DRAM
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Access time: 5.4ns
Clock frequency: 166MHz
товар відсутній
AS4C4M16SA-6BINTR |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54
Mounting: SMD
Case: FBGA54
Kind of package: reel
Operating temperature: -40...85°C
Memory: 64Mb DRAM
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Access time: 5.4ns
Clock frequency: 166MHz
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54
Mounting: SMD
Case: FBGA54
Kind of package: reel
Operating temperature: -40...85°C
Memory: 64Mb DRAM
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Access time: 5.4ns
Clock frequency: 166MHz
товар відсутній
AS4C4M16SA-6TAN |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP54 II
Mounting: SMD
Case: TSOP54 II
Kind of package: in-tray
Operating temperature: -40...105°C
Memory: 64Mb DRAM
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Access time: 5.4ns
Clock frequency: 166MHz
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP54 II
Mounting: SMD
Case: TSOP54 II
Kind of package: in-tray
Operating temperature: -40...105°C
Memory: 64Mb DRAM
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Access time: 5.4ns
Clock frequency: 166MHz
товар відсутній
AS4C4M16SA-6TANTR |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP54 II
Mounting: SMD
Case: TSOP54 II
Kind of package: reel
Operating temperature: -40...105°C
Memory: 64Mb DRAM
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Access time: 5.4ns
Clock frequency: 166MHz
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP54 II
Mounting: SMD
Case: TSOP54 II
Kind of package: reel
Operating temperature: -40...105°C
Memory: 64Mb DRAM
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Access time: 5.4ns
Clock frequency: 166MHz
товар відсутній
AS4C4M16SA-6TCN |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 4Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 4Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
на замовлення 124 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 204.21 грн |
5+ | 169.12 грн |
6+ | 146.43 грн |
17+ | 138.38 грн |
108+ | 133.25 грн |
AS4C4M16SA-6TCNTR |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP54 II
Mounting: SMD
Case: TSOP54 II
Kind of package: reel
Operating temperature: 0...70°C
Kind of interface: parallel
Memory: 64Mb DRAM
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Access time: 5.4ns
Clock frequency: 166MHz
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP54 II
Mounting: SMD
Case: TSOP54 II
Kind of package: reel
Operating temperature: 0...70°C
Kind of interface: parallel
Memory: 64Mb DRAM
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Access time: 5.4ns
Clock frequency: 166MHz
товар відсутній
AS4C4M16SA-6TINTR |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 4Mx16bit
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 4Mx16bit
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
на замовлення 3737 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 226.29 грн |
5+ | 203.54 грн |
6+ | 153.02 грн |
16+ | 144.96 грн |
AS4C4M16SA-7B2CN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; FBGA60; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 5.4s
Case: FBGA60
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; FBGA60; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 5.4s
Case: FBGA60
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Operating voltage: 3.3V
товар відсутній
AS4C4M16SA-7B2CNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; FBGA60; 0÷70°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 5.4s
Case: FBGA60
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; FBGA60; 0÷70°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 5.4s
Case: FBGA60
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C4M16SA-7BCN |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; FBGA54; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 5.4s
Case: FBGA54
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; FBGA54; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 5.4s
Case: FBGA54
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Operating voltage: 3.3V
товар відсутній
AS4C4M16SA-7BCNTR |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; FBGA54; 0÷70°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 5.4s
Case: FBGA54
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; FBGA54; 0÷70°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 5.4s
Case: FBGA54
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C4M16SA-7TCN |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 143MHz; 5.4s; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 5.4s
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 143MHz; 5.4s; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 5.4s
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
на замовлення 3144 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 204.21 грн |
5+ | 185.96 грн |
7+ | 134.71 грн |
18+ | 127.39 грн |
540+ | 125.93 грн |
972+ | 123 грн |
AS4C4M16SA-7TCNTR |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
на замовлення 1431 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 224.71 грн |
5+ | 191.82 грн |
7+ | 139.11 грн |
17+ | 131.79 грн |
250+ | 130.32 грн |
AS4C4M16SA-5TCN |
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Виробник: Alliance Memory
DRAM 64M 3.3V 200MHz 4M x 16 SDRAM
DRAM 64M 3.3V 200MHz 4M x 16 SDRAM
на замовлення 117 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 247.64 грн |
10+ | 219.85 грн |
25+ | 187.66 грн |
108+ | 182.74 грн |
216+ | 157.44 грн |
1080+ | 156.74 грн |
2592+ | 149.01 грн |
AS4C4M16SA-5TCNTR |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 200MHz; 4.5ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 200MHz
Access time: 4.5ns
Case: TSOP54 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 200MHz; 4.5ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 200MHz
Access time: 4.5ns
Case: TSOP54 II
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C4M16SA-6BAN |
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Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C4M16SA-6BAN - DRAM, SDRAM, 64 Mbit, 4M x 16 Bit, 166 MHz, FBGA, 54 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: SDRAM
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: FBGA
Speicherdichte: 64Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Betriebstemperatur, min.: -40°C
euEccn: NLR
Anzahl der Pins: 54Pin(s)
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 105°C
Speicherkonfiguration: 4M x 16 Bit
SVHC: No SVHC (14-Jun-2023)
Description: ALLIANCE MEMORY - AS4C4M16SA-6BAN - DRAM, SDRAM, 64 Mbit, 4M x 16 Bit, 166 MHz, FBGA, 54 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: SDRAM
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: FBGA
Speicherdichte: 64Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Betriebstemperatur, min.: -40°C
euEccn: NLR
Anzahl der Pins: 54Pin(s)
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 105°C
Speicherkonfiguration: 4M x 16 Bit
SVHC: No SVHC (14-Jun-2023)
на замовлення 316 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 234.96 грн |
10+ | 227.08 грн |
25+ | 219.19 грн |
50+ | 196.21 грн |
100+ | 173.69 грн |
250+ | 166.93 грн |
AS4C4M16SA-6BAN |
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Виробник: Alliance Memory
DRAM SDRAM, 64Mb, 4M x 16, 3.3V, 54ball BGA, 166 Mhz, Automotive temp - Tray
DRAM SDRAM, 64Mb, 4M x 16, 3.3V, 54ball BGA, 166 Mhz, Automotive temp - Tray
на замовлення 345 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 208.28 грн |
10+ | 181.06 грн |
AS4C4M16SA-6BAN |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54
Mounting: SMD
Case: FBGA54
Kind of package: in-tray
Operating temperature: -40...105°C
Memory: 64Mb DRAM
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Access time: 5.4ns
Clock frequency: 166MHz
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54
Mounting: SMD
Case: FBGA54
Kind of package: in-tray
Operating temperature: -40...105°C
Memory: 64Mb DRAM
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Access time: 5.4ns
Clock frequency: 166MHz
кількість в упаковці: 1 шт
товар відсутній
AS4C4M16SA-6BANTR |
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Виробник: Alliance Memory
DRAM SDRAM, 64Mb, 4M x 16, 3.3V, 54ball BGA, 166 Mhz, Automotive temp - Tray & Reel
DRAM SDRAM, 64Mb, 4M x 16, 3.3V, 54ball BGA, 166 Mhz, Automotive temp - Tray & Reel
товар відсутній
AS4C4M16SA-6BANTR |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54
Mounting: SMD
Case: FBGA54
Kind of package: reel
Operating temperature: -40...105°C
Memory: 64Mb DRAM
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Access time: 5.4ns
Clock frequency: 166MHz
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54
Mounting: SMD
Case: FBGA54
Kind of package: reel
Operating temperature: -40...105°C
Memory: 64Mb DRAM
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Access time: 5.4ns
Clock frequency: 166MHz
кількість в упаковці: 2500 шт
товар відсутній
AS4C4M16SA-6BIN |
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Виробник: Alliance Memory
DRAM SDR, 64Mb, 4M x 16, 3.3V, 54-ball FBGA, 166 MHz, Industrial Temp(A)
DRAM SDR, 64Mb, 4M x 16, 3.3V, 54-ball FBGA, 166 MHz, Industrial Temp(A)
на замовлення 1390 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 264.86 грн |
10+ | 214.2 грн |
348+ | 157.44 грн |
5220+ | 151.11 грн |
10092+ | 149.01 грн |
AS4C4M16SA-6BIN |
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Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C4M16SA-6BIN - DRAM, SDRAM, 64 Mbit, 4M x 16 Bit, 166 MHz, FBGA, 54 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: SDRAM
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: FBGA
Speicherdichte: 64Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Betriebstemperatur, min.: -40°C
euEccn: NLR
Anzahl der Pins: 54Pin(s)
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 85°C
Speicherkonfiguration: 4M x 16 Bit
SVHC: No SVHC (14-Jun-2023)
Description: ALLIANCE MEMORY - AS4C4M16SA-6BIN - DRAM, SDRAM, 64 Mbit, 4M x 16 Bit, 166 MHz, FBGA, 54 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: SDRAM
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: FBGA
Speicherdichte: 64Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Betriebstemperatur, min.: -40°C
euEccn: NLR
Anzahl der Pins: 54Pin(s)
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 85°C
Speicherkonfiguration: 4M x 16 Bit
SVHC: No SVHC (14-Jun-2023)
на замовлення 141 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 286.21 грн |
10+ | 209.73 грн |
25+ | 201.85 грн |
50+ | 180.11 грн |
100+ | 158.82 грн |
AS4C4M16SA-6BIN |
![]() ![]() |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54
Mounting: SMD
Case: FBGA54
Kind of package: in-tray
Operating temperature: -40...85°C
Memory: 64Mb DRAM
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Access time: 5.4ns
Clock frequency: 166MHz
кількість в упаковці: 348 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54
Mounting: SMD
Case: FBGA54
Kind of package: in-tray
Operating temperature: -40...85°C
Memory: 64Mb DRAM
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Access time: 5.4ns
Clock frequency: 166MHz
кількість в упаковці: 348 шт
товар відсутній
AS4C4M16SA-6BIN |
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Виробник: Alliance Memory
Синхронна енергозалежна динамічна пам'ять SDRAM; Uживл, В = 3,0...3,6; Інтерфейс = Паралельний; Об. пам. = 64 Мбіт; Орг. пам. = 4М х 16; Тдост/Частота = 166 МГц; Тексп, °С = -40...+85; tвстан = 5,4 нс; TFBGA-54
Синхронна енергозалежна динамічна пам'ять SDRAM; Uживл, В = 3,0...3,6; Інтерфейс = Паралельний; Об. пам. = 64 Мбіт; Орг. пам. = 4М х 16; Тдост/Частота = 166 МГц; Тексп, °С = -40...+85; tвстан = 5,4 нс; TFBGA-54
на замовлення 226 шт:
термін постачання 3-4 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 141.15 грн |
10+ | 131.74 грн |
100+ | 122.34 грн |
AS4C4M16SA-6BINTR |
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Виробник: Alliance Memory
DRAM SDR, 64Mb, 4M x 16, 3.3V, 54-ball FBGA, 166 MHz, Industrial Temp(A) TAPE AND REEL
DRAM SDR, 64Mb, 4M x 16, 3.3V, 54-ball FBGA, 166 MHz, Industrial Temp(A) TAPE AND REEL
на замовлення 7700 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 272.24 грн |
10+ | 243.29 грн |
100+ | 184.15 грн |
250+ | 183.45 грн |
500+ | 177.12 грн |
1000+ | 168.69 грн |
2500+ | 160.25 грн |
AS4C4M16SA-6BINTR |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54
Mounting: SMD
Case: FBGA54
Kind of package: reel
Operating temperature: -40...85°C
Memory: 64Mb DRAM
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Access time: 5.4ns
Clock frequency: 166MHz
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54
Mounting: SMD
Case: FBGA54
Kind of package: reel
Operating temperature: -40...85°C
Memory: 64Mb DRAM
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Access time: 5.4ns
Clock frequency: 166MHz
кількість в упаковці: 2500 шт
товар відсутній
AS4C4M16SA-6TAN |
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Виробник: Alliance Memory
DRAM SDRAM, 64Mb, 4M x 16, 3.3V, 54pin TSOP II, 166 Mhz, Automotive temp - Tray
DRAM SDRAM, 64Mb, 4M x 16, 3.3V, 54pin TSOP II, 166 Mhz, Automotive temp - Tray
на замовлення 209 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 272.24 грн |
10+ | 237.64 грн |
108+ | 184.85 грн |
216+ | 183.45 грн |
540+ | 168.69 грн |
2592+ | 163.77 грн |
5076+ | 155.33 грн |
AS4C4M16SA-6TAN |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP54 II
Mounting: SMD
Case: TSOP54 II
Kind of package: in-tray
Operating temperature: -40...105°C
Memory: 64Mb DRAM
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Access time: 5.4ns
Clock frequency: 166MHz
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP54 II
Mounting: SMD
Case: TSOP54 II
Kind of package: in-tray
Operating temperature: -40...105°C
Memory: 64Mb DRAM
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Access time: 5.4ns
Clock frequency: 166MHz
кількість в упаковці: 1 шт
товар відсутній
AS4C4M16SA-6TANTR |
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Виробник: Alliance Memory
DRAM SDR, 64Mb, 4M x 16, 3.3V, 54pin TSOP II, 166 Mhz, automotive temp(.63) TAPE AND REEL
DRAM SDR, 64Mb, 4M x 16, 3.3V, 54pin TSOP II, 166 Mhz, automotive temp(.63) TAPE AND REEL
товар відсутній
AS4C4M16SA-6TANTR |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP54 II
Mounting: SMD
Case: TSOP54 II
Kind of package: reel
Operating temperature: -40...105°C
Memory: 64Mb DRAM
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Access time: 5.4ns
Clock frequency: 166MHz
кількість в упаковці: 1000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP54 II
Mounting: SMD
Case: TSOP54 II
Kind of package: reel
Operating temperature: -40...105°C
Memory: 64Mb DRAM
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Access time: 5.4ns
Clock frequency: 166MHz
кількість в упаковці: 1000 шт
товар відсутній
AS4C4M16SA-6TCN |
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Виробник: Alliance Memory
DRAM SDR, 64Mb, 4M x 16, 3.3V, 54pin TSOP II, 166 MHz, Commercial Temp(A)
DRAM SDR, 64Mb, 4M x 16, 3.3V, 54pin TSOP II, 166 MHz, Commercial Temp(A)
на замовлення 31 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 212.38 грн |
10+ | 188.33 грн |
108+ | 146.19 грн |
540+ | 130.73 грн |
1080+ | 129.33 грн |
2592+ | 118.08 грн |
5076+ | 117.38 грн |
AS4C4M16SA-6TCN |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 4Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 4Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
кількість в упаковці: 1 шт
на замовлення 124 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 245.05 грн |
5+ | 210.76 грн |
6+ | 175.71 грн |
17+ | 166.05 грн |
108+ | 159.9 грн |
AS4C4M16SA-6TCNTR |
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Виробник: Alliance Memory
DRAM SDR, 64Mb, 4M x 16, 3.3V, 54pin TSOP II, 166 MHz, Commercial Temp(A) tape and reel
DRAM SDR, 64Mb, 4M x 16, 3.3V, 54pin TSOP II, 166 MHz, Commercial Temp(A) tape and reel
на замовлення 621 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 224.68 грн |
10+ | 198.84 грн |
100+ | 152.52 грн |
500+ | 146.19 грн |
1000+ | 139.17 грн |
5000+ | 138.46 грн |
10000+ | 118.78 грн |
AS4C4M16SA-6TCNTR |
![]() ![]() |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP54 II
Mounting: SMD
Case: TSOP54 II
Kind of package: reel
Operating temperature: 0...70°C
Kind of interface: parallel
Memory: 64Mb DRAM
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Access time: 5.4ns
Clock frequency: 166MHz
кількість в упаковці: 1000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP54 II
Mounting: SMD
Case: TSOP54 II
Kind of package: reel
Operating temperature: 0...70°C
Kind of interface: parallel
Memory: 64Mb DRAM
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Access time: 5.4ns
Clock frequency: 166MHz
кількість в упаковці: 1000 шт
товар відсутній
AS4C4M16SA-6TIN |
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Виробник: Alliance Memory
DRAM SDRAM, 64Mb, 4M x 16, 3.3V, 54pin TSOP II, 166 Mhz, industrial temp - Tray
DRAM SDRAM, 64Mb, 4M x 16, 3.3V, 54pin TSOP II, 166 Mhz, industrial temp - Tray
на замовлення 906 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 241.08 грн |
10+ | 211.77 грн |
108+ | 156.03 грн |
540+ | 145.49 грн |
2592+ | 144.79 грн |
5076+ | 141.27 грн |
25056+ | 140.57 грн |
AS4C4M16SA-6TIN |
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Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C4M16SA-6TIN - DRAM, SDRAM, 64 Mbit, 4M x 16 Bit, 166 MHz, TSOP-II, 54 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: SDRAM
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: TSOP-II
Speicherdichte: 64Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Betriebstemperatur, min.: -40°C
euEccn: NLR
Anzahl der Pins: 54Pin(s)
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 85°C
Speicherkonfiguration: 4M x 16 Bit
SVHC: No SVHC (14-Jun-2023)
Description: ALLIANCE MEMORY - AS4C4M16SA-6TIN - DRAM, SDRAM, 64 Mbit, 4M x 16 Bit, 166 MHz, TSOP-II, 54 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: SDRAM
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: TSOP-II
Speicherdichte: 64Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Betriebstemperatur, min.: -40°C
euEccn: NLR
Anzahl der Pins: 54Pin(s)
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 85°C
Speicherkonfiguration: 4M x 16 Bit
SVHC: No SVHC (14-Jun-2023)
на замовлення 86 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 236.54 грн |
10+ | 204.21 грн |
25+ | 190.02 грн |
50+ | 169.12 грн |
AS4C4M16SA-6TINTR |
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Виробник: Alliance Memory
DRAM SDR, 64Mb, 4M x 16, 3.3V, 54pin TSOP II, 166 Mhz, industrial temp(.63) Tape and Reel
DRAM SDR, 64Mb, 4M x 16, 3.3V, 54pin TSOP II, 166 Mhz, industrial temp(.63) Tape and Reel
на замовлення 550 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 241.08 грн |
10+ | 215.81 грн |
100+ | 163.77 грн |
250+ | 163.06 грн |
500+ | 156.74 грн |
1000+ | 148.3 грн |
2000+ | 147.6 грн |
AS4C4M16SA-6TINTR |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 4Mx16bit
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 4Mx16bit
Clock frequency: 166MHz
Access time: 6ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
кількість в упаковці: 1 шт
на замовлення 3737 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 271.55 грн |
5+ | 253.64 грн |
6+ | 183.62 грн |
16+ | 173.96 грн |
AS4C4M16SA-7B2CN |
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Виробник: Alliance Memory
DRAM 64M 3.3V 143MHz 4M x 16 SDRAM
DRAM 64M 3.3V 143MHz 4M x 16 SDRAM
на замовлення 117 шт:
термін постачання 21-30 дні (днів)AS4C4M16SA-7B2CN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; FBGA60; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 5.4s
Case: FBGA60
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; FBGA60; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 5.4s
Case: FBGA60
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Operating voltage: 3.3V
товар відсутній
AS4C4M16SA-7B2CNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; FBGA60; 0÷70°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 5.4s
Case: FBGA60
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; FBGA60; 0÷70°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 5.4s
Case: FBGA60
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C4M16SA-7BCN |
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Виробник: Alliance Memory
DRAM
DRAM
на замовлення 175 шт:
термін постачання 21-30 дні (днів)AS4C4M16SA-7BCN |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; FBGA54; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 5.4s
Case: FBGA54
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; FBGA54; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 5.4s
Case: FBGA54
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Operating voltage: 3.3V
товар відсутній
AS4C4M16SA-7BCN |
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Виробник: Alliance Memory
Синхронна динамічна пам'ять SDRAM; Uживл, В = 3,0...3,6; Інтерфейс = Паралельний; Об. пам. = 64 Мбіт; Орг. пам. = 4М х 16; Тдост/Частота = 143 МГц; Тексп, °С = 0...+70; TFBGA-54
Синхронна динамічна пам'ять SDRAM; Uживл, В = 3,0...3,6; Інтерфейс = Паралельний; Об. пам. = 64 Мбіт; Орг. пам. = 4М х 16; Тдост/Частота = 143 МГц; Тексп, °С = 0...+70; TFBGA-54
на замовлення 1 шт:
термін постачання 3-4 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 624 грн |
AS4C4M16SA-7BCNTR |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; FBGA54; 0÷70°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 5.4s
Case: FBGA54
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bit; 3.3V; 143MHz; 5.4s; FBGA54; 0÷70°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 5.4s
Case: FBGA54
Memory capacity: 64Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C4M16SA-7TCN |
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Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C4M16SA-7TCN - DRAM, SDRAM, 64 Mbit, 4M x 16 Bit, 143 MHz, TSOP-II, 54 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: SDRAM
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: TSOP-II
Speicherdichte: 64Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 143MHz
Betriebstemperatur, min.: 0°C
euEccn: NLR
Anzahl der Pins: 54Pin(s)
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 70°C
Speicherkonfiguration: 4M x 16 Bit
SVHC: No SVHC (14-Jun-2023)
Description: ALLIANCE MEMORY - AS4C4M16SA-7TCN - DRAM, SDRAM, 64 Mbit, 4M x 16 Bit, 143 MHz, TSOP-II, 54 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: SDRAM
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: TSOP-II
Speicherdichte: 64Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 143MHz
Betriebstemperatur, min.: 0°C
euEccn: NLR
Anzahl der Pins: 54Pin(s)
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 70°C
Speicherkonfiguration: 4M x 16 Bit
SVHC: No SVHC (14-Jun-2023)
на замовлення 98 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 240.48 грн |
10+ | 190.02 грн |
25+ | 180.56 грн |
50+ | 158.14 грн |
AS4C4M16SA-7TCN |
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Виробник: Alliance Memory
DRAM
DRAM
на замовлення 2665 шт:
термін постачання 21-30 дні (днів)AS4C4M16SA-7TCN |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 143MHz; 5.4s; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 5.4s
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 143MHz; 5.4s; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 5.4s
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
кількість в упаковці: 1 шт
на замовлення 3144 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 245.05 грн |
5+ | 231.74 грн |
7+ | 161.66 грн |
18+ | 152.87 грн |
540+ | 151.11 грн |
972+ | 147.6 грн |
AS4C4M16SA-7TCNTR |
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Виробник: Alliance Memory
DRAM
DRAM
на замовлення 30 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 247.64 грн |
10+ | 219.85 грн |
25+ | 187.66 грн |
100+ | 167.28 грн |
250+ | 161.66 грн |
500+ | 160.95 грн |
1000+ | 147.6 грн |
AS4C4M16SA-7TCNTR |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 143MHz; 7ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 4Mx16bit
Clock frequency: 143MHz
Access time: 7ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
кількість в упаковці: 1 шт
на замовлення 1431 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 269.65 грн |
5+ | 239.04 грн |
7+ | 166.93 грн |
17+ | 158.14 грн |
250+ | 156.39 грн |
AS4C4M16SB-6TIN |
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Виробник: Alliance Memory
DRAM SDRAM, 64Mb, 4M x 16, 3.3V, 54pin TSOP II, 166 Mhz, industrial temp - Tray
DRAM SDRAM, 64Mb, 4M x 16, 3.3V, 54pin TSOP II, 166 Mhz, industrial temp - Tray
на замовлення 3392 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 241.9 грн |
10+ | 214.2 грн |
108+ | 166.58 грн |
5076+ | 145.49 грн |
10044+ | 143.38 грн |
25056+ | 141.27 грн |
AS4C4M32D1A-5BCN |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 4Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: BGA144
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 4Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: BGA144
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
товар відсутній