Продукція > ALLIANCE MEMORY > Всі товари виробника ALLIANCE MEMORY (3685) > Сторінка 24 з 62
Фото | Назва | Виробник | Інформація |
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AS4C64M32MD2A-25BINTR | Alliance Memory |
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AS4C64M32MD2A-25BINTR | ALLIANCE MEMORY |
![]() ![]() Description: IC: DRAM memory; 2GbDRAM; 64Mx32bit; 1.2÷1.8V; 400MHz; 18ns; reel Operating temperature: -40...85°C Type of integrated circuit: DRAM memory Kind of memory: LPDDR2; SDRAM Memory organisation: 64Mx32bit Access time: 18ns Clock frequency: 400MHz Kind of package: reel Kind of interface: parallel Memory: 2Gb DRAM Mounting: SMD Case: FBGA134 Operating voltage: 1.2...1.8V кількість в упаковці: 2000 шт |
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AS4C64M32MD4-062BAN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbSDRAM; 64Mx32bit; 1.6GHz; FBGA200; -40÷105°C Memory: 2Gb SDRAM Clock frequency: 1.6GHz Kind of memory: LPDDR4; SDRAM Operating temperature: -40...105°C Type of integrated circuit: DRAM memory Memory organisation: 64Mx32bit Case: FBGA200 Mounting: SMD |
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AS4C64M4SA-6TIN | ALLIANCE MEMORY |
![]() ![]() Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 3.3V; 166MHz; 5ns; -40÷85°C Mounting: SMD Case: TSOP54 II Kind of package: in-tray Operating temperature: -40...85°C Memory: 256Mb DRAM Operating voltage: 3.3V Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bitx4 Access time: 5ns Clock frequency: 166MHz |
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AS4C64M4SA-6TINTR | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 3.3V; 166MHz; 5ns; -40÷85°C Mounting: SMD Case: TSOP54 II Kind of package: reel Operating temperature: -40...85°C Memory: 256Mb DRAM Operating voltage: 3.3V Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bitx4 Access time: 5ns Clock frequency: 166MHz |
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AS4C64M4SA-7TCN | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 4Mx16bitx4; 3.3V; 143MHz; 5.4ns; TSOP54 II; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bitx4 Clock frequency: 143MHz Access time: 5.4ns Case: TSOP54 II Memory capacity: 256Mb Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray Operating voltage: 3.3V |
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AS4C64M4SA-7TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bitx4; 3.3V; 143MHz; 5.4ns; TSOP54 II; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bitx4 Clock frequency: 143MHz Access time: 5.4ns Case: TSOP54 II Memory capacity: 256Mb Mounting: SMD Operating temperature: 0...70°C Kind of package: reel Operating voltage: 3.3V |
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AS4C64M4SA-6TIN | Alliance Memory |
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на замовлення 68 шт: термін постачання 21-30 дні (днів) |
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AS4C64M4SA-6TIN | ALLIANCE MEMORY |
![]() ![]() Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 3.3V; 166MHz; 5ns; -40÷85°C Mounting: SMD Case: TSOP54 II Kind of package: in-tray Operating temperature: -40...85°C Memory: 256Mb DRAM Operating voltage: 3.3V Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bitx4 Access time: 5ns Clock frequency: 166MHz кількість в упаковці: 1 шт |
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AS4C64M4SA-6TINTR | Alliance Memory |
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AS4C64M4SA-6TINTR | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 3.3V; 166MHz; 5ns; -40÷85°C Mounting: SMD Case: TSOP54 II Kind of package: reel Operating temperature: -40...85°C Memory: 256Mb DRAM Operating voltage: 3.3V Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bitx4 Access time: 5ns Clock frequency: 166MHz кількість в упаковці: 1000 шт |
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AS4C64M4SA-7TCN | Alliance Memory |
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на замовлення 103 шт: термін постачання 21-30 дні (днів) |
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AS4C64M4SA-7TCN | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 4Mx16bitx4; 3.3V; 143MHz; 5.4ns; TSOP54 II; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bitx4 Clock frequency: 143MHz Access time: 5.4ns Case: TSOP54 II Memory capacity: 256Mb Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray Operating voltage: 3.3V |
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AS4C64M4SA-7TCNTR | Alliance Memory |
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AS4C64M4SA-7TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4Mx16bitx4; 3.3V; 143MHz; 5.4ns; TSOP54 II; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bitx4 Clock frequency: 143MHz Access time: 5.4ns Case: TSOP54 II Memory capacity: 256Mb Mounting: SMD Operating temperature: 0...70°C Kind of package: reel Operating voltage: 3.3V |
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AS4C64M4SA-7TIN | Alliance Memory | DRAM 256Mb, 3.3V, 166Mhz 64M x 4 SDRAM |
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AS4C64M4SA-7TINTR | Alliance Memory | DRAM 256Mb, 3.3V, 166Mhz 64M x 4 SDRAM |
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AS4C64M8D1-5BCN | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; FBGA60; 0÷70°C; parallel Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 64Mx8bit Clock frequency: 200MHz Case: FBGA60 Memory capacity: 512Mb Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V |
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AS4C64M8D1-5BCNTR | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 2.5V; 200MHz; FBGA60; 0÷70°C Memory: 512Mb DRAM Clock frequency: 200MHz Kind of memory: DDR1; SDRAM Operating temperature: 0...70°C Type of integrated circuit: DRAM memory Kind of package: reel Memory organisation: 64Mx8bit Operating voltage: 2.5V Case: FBGA60 Mounting: SMD |
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AS4C64M8D1-5BIN | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; FBGA60; -40÷95°C; parallel Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 64Mx8bit Clock frequency: 200MHz Case: FBGA60 Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...95°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V |
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AS4C64M8D1-5BINTR | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 2.5V; 200MHz; FBGA60; reel Memory: 512Mb DRAM Clock frequency: 200MHz Kind of memory: DDR1; SDRAM Operating temperature: -40...95°C Type of integrated circuit: DRAM memory Kind of package: reel Memory organisation: 64Mx8bit Operating voltage: 2.5V Case: FBGA60 Mounting: SMD |
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AS4C64M8D1-5TCN | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; 0÷70°C; in-tray Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 64Mx8bit Clock frequency: 200MHz Case: TSOP66 II Memory capacity: 512Mb Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V |
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AS4C64M8D1-5TCNTR | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; 0÷70°C; reel Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 64Mx8bit Clock frequency: 200MHz Case: TSOP66 II Memory capacity: 512Mb Mounting: SMD Operating temperature: 0...70°C Kind of package: reel Operating voltage: 2.5V |
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AS4C64M8D1-5TIN | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; -40÷95°C Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 64Mx8bit Clock frequency: 200MHz Case: TSOP66 II Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...95°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V |
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AS4C64M8D1-5TINTR | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; -40÷95°C; reel Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 64Mx8bit Clock frequency: 200MHz Case: TSOP66 II Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...95°C Kind of package: reel Operating voltage: 2.5V |
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AS4C64M8D1-5BCN | Alliance Memory |
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на замовлення 240 шт: термін постачання 21-30 дні (днів) |
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AS4C64M8D1-5BCN | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; FBGA60; 0÷70°C; parallel Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 64Mx8bit Clock frequency: 200MHz Case: FBGA60 Memory capacity: 512Mb Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V кількість в упаковці: 240 шт |
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AS4C64M8D1-5BCNTR | Alliance Memory |
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AS4C64M8D1-5BCNTR | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 2.5V; 200MHz; FBGA60; 0÷70°C Memory: 512Mb DRAM Clock frequency: 200MHz Kind of memory: DDR1; SDRAM Operating temperature: 0...70°C Type of integrated circuit: DRAM memory Kind of package: reel Memory organisation: 64Mx8bit Operating voltage: 2.5V Case: FBGA60 Mounting: SMD кількість в упаковці: 2500 шт |
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AS4C64M8D1-5BIN | Alliance Memory |
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на замовлення 240 шт: термін постачання 28-37 дні (днів) |
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AS4C64M8D1-5BIN | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; FBGA60; -40÷95°C; parallel Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 64Mx8bit Clock frequency: 200MHz Case: FBGA60 Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...95°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V кількість в упаковці: 240 шт |
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AS4C64M8D1-5BINTR | Alliance Memory |
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AS4C64M8D1-5BINTR | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 2.5V; 200MHz; FBGA60; reel Memory: 512Mb DRAM Clock frequency: 200MHz Kind of memory: DDR1; SDRAM Operating temperature: -40...95°C Type of integrated circuit: DRAM memory Kind of package: reel Memory organisation: 64Mx8bit Operating voltage: 2.5V Case: FBGA60 Mounting: SMD кількість в упаковці: 2500 шт |
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AS4C64M8D1-5TCN | Alliance Memory |
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на замовлення 19 шт: термін постачання 21-30 дні (днів) |
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AS4C64M8D1-5TCN | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; 0÷70°C; in-tray Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 64Mx8bit Clock frequency: 200MHz Case: TSOP66 II Memory capacity: 512Mb Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V |
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AS4C64M8D1-5TCNTR | Alliance Memory |
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AS4C64M8D1-5TCNTR | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; 0÷70°C; reel Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 64Mx8bit Clock frequency: 200MHz Case: TSOP66 II Memory capacity: 512Mb Mounting: SMD Operating temperature: 0...70°C Kind of package: reel Operating voltage: 2.5V |
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AS4C64M8D1-5TIN | Alliance Memory |
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на замовлення 76 шт: термін постачання 21-30 дні (днів) |
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AS4C64M8D1-5TIN | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; -40÷95°C Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 64Mx8bit Clock frequency: 200MHz Case: TSOP66 II Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...95°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V |
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AS4C64M8D1-5TINTR | Alliance Memory |
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AS4C64M8D1-5TINTR | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; -40÷95°C; reel Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 64Mx8bit Clock frequency: 200MHz Case: TSOP66 II Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...95°C Kind of package: reel Operating voltage: 2.5V |
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AS4C64M8D2-25BAN | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60 Operating temperature: -40...105°C Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 64Mx8bit Access time: 12.5ns Clock frequency: 400MHz Kind of package: in-tray Memory: 512Mb DRAM Mounting: SMD Case: FBGA60 Operating voltage: 1.8V |
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AS4C64M8D2-25BANTR | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60 Operating temperature: -40...105°C Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 64Mx8bit Access time: 12.5ns Clock frequency: 400MHz Kind of package: reel Memory: 512Mb DRAM Mounting: SMD Case: FBGA60 Operating voltage: 1.8V |
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AS4C64M8D2-25BCN | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60 Operating temperature: 0...85°C Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 64Mx8bit Access time: 12.5ns Clock frequency: 400MHz Kind of package: in-tray Kind of interface: parallel Memory: 512Mb DRAM Mounting: SMD Case: FBGA60 Operating voltage: 1.8V |
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AS4C64M8D2-25BCNTR | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60 Operating temperature: 0...85°C Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 64Mx8bit Access time: 12.5ns Clock frequency: 400MHz Kind of package: reel Memory: 512Mb DRAM Mounting: SMD Case: FBGA60 Operating voltage: 1.8V |
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AS4C64M8D2-25BIN | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60 Operating temperature: -40...95°C Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 64Mx8bit Access time: 12.5ns Clock frequency: 400MHz Kind of package: in-tray Kind of interface: parallel Memory: 512Mb DRAM Mounting: SMD Case: FBGA60 Operating voltage: 1.8V |
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AS4C64M8D2-25BINTR | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60 Operating temperature: -40...95°C Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 64Mx8bit Access time: 12.5ns Clock frequency: 400MHz Kind of package: reel Memory: 512Mb DRAM Mounting: SMD Case: FBGA60 Operating voltage: 1.8V |
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AS4C64M8D2-25BAN | Alliance Memory |
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на замовлення 142 шт: термін постачання 21-30 дні (днів) |
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AS4C64M8D2-25BAN | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60 Operating temperature: -40...105°C Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 64Mx8bit Access time: 12.5ns Clock frequency: 400MHz Kind of package: in-tray Memory: 512Mb DRAM Mounting: SMD Case: FBGA60 Operating voltage: 1.8V кількість в упаковці: 264 шт |
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AS4C64M8D2-25BANTR | Alliance Memory |
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AS4C64M8D2-25BANTR | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60 Operating temperature: -40...105°C Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 64Mx8bit Access time: 12.5ns Clock frequency: 400MHz Kind of package: reel Memory: 512Mb DRAM Mounting: SMD Case: FBGA60 Operating voltage: 1.8V кількість в упаковці: 2000 шт |
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AS4C64M8D2-25BCN | Alliance Memory |
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на замовлення 164 шт: термін постачання 21-30 дні (днів) |
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AS4C64M8D2-25BCN | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60 Operating temperature: 0...85°C Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 64Mx8bit Access time: 12.5ns Clock frequency: 400MHz Kind of package: in-tray Kind of interface: parallel Memory: 512Mb DRAM Mounting: SMD Case: FBGA60 Operating voltage: 1.8V кількість в упаковці: 264 шт |
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AS4C64M8D2-25BCNTR | Alliance Memory |
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AS4C64M8D2-25BCNTR | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60 Operating temperature: 0...85°C Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 64Mx8bit Access time: 12.5ns Clock frequency: 400MHz Kind of package: reel Memory: 512Mb DRAM Mounting: SMD Case: FBGA60 Operating voltage: 1.8V кількість в упаковці: 2000 шт |
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AS4C64M8D2-25BIN | Alliance Memory |
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на замовлення 1036 шт: термін постачання 21-30 дні (днів) |
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AS4C64M8D2-25BIN | ALLIANCE MEMORY |
![]() tariffCode: 85423231 DRAM-Ausführung: DDR2 rohsCompliant: YES IC-Montage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES IC-Gehäuse / Bauform: FBGA Speicherdichte: 512Mbit usEccn: EAR99 Versorgungsspannung, nom.: 1.8V Taktfrequenz, max.: 400MHz Betriebstemperatur, min.: -40°C euEccn: NLR Anzahl der Pins: 60Pin(s) Produktpalette: - productTraceability: No Betriebstemperatur, max.: 95°C Speicherkonfiguration: 64M x 8 Bit SVHC: No SVHC (14-Jun-2023) |
на замовлення 254 шт: термін постачання 21-31 дні (днів) |
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AS4C64M8D2-25BIN | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60 Operating temperature: -40...95°C Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 64Mx8bit Access time: 12.5ns Clock frequency: 400MHz Kind of package: in-tray Kind of interface: parallel Memory: 512Mb DRAM Mounting: SMD Case: FBGA60 Operating voltage: 1.8V кількість в упаковці: 264 шт |
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AS4C64M8D2-25BINTR | Alliance Memory |
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AS4C64M8D2-25BINTR | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60 Operating temperature: -40...95°C Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 64Mx8bit Access time: 12.5ns Clock frequency: 400MHz Kind of package: reel Memory: 512Mb DRAM Mounting: SMD Case: FBGA60 Operating voltage: 1.8V кількість в упаковці: 2000 шт |
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AS4C64M32MD2A-25BINTR |
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Виробник: Alliance Memory
DRAM LPDDR2, 2G, 64M X 32, 1.2V, 134ball BGA (A-DIE), INDUSTRIAL TEMP - Tape & Reel
DRAM LPDDR2, 2G, 64M X 32, 1.2V, 134ball BGA (A-DIE), INDUSTRIAL TEMP - Tape & Reel
товар відсутній
AS4C64M32MD2A-25BINTR |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 64Mx32bit; 1.2÷1.8V; 400MHz; 18ns; reel
Operating temperature: -40...85°C
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR2; SDRAM
Memory organisation: 64Mx32bit
Access time: 18ns
Clock frequency: 400MHz
Kind of package: reel
Kind of interface: parallel
Memory: 2Gb DRAM
Mounting: SMD
Case: FBGA134
Operating voltage: 1.2...1.8V
кількість в упаковці: 2000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 64Mx32bit; 1.2÷1.8V; 400MHz; 18ns; reel
Operating temperature: -40...85°C
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR2; SDRAM
Memory organisation: 64Mx32bit
Access time: 18ns
Clock frequency: 400MHz
Kind of package: reel
Kind of interface: parallel
Memory: 2Gb DRAM
Mounting: SMD
Case: FBGA134
Operating voltage: 1.2...1.8V
кількість в упаковці: 2000 шт
товар відсутній
AS4C64M32MD4-062BAN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbSDRAM; 64Mx32bit; 1.6GHz; FBGA200; -40÷105°C
Memory: 2Gb SDRAM
Clock frequency: 1.6GHz
Kind of memory: LPDDR4; SDRAM
Operating temperature: -40...105°C
Type of integrated circuit: DRAM memory
Memory organisation: 64Mx32bit
Case: FBGA200
Mounting: SMD
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbSDRAM; 64Mx32bit; 1.6GHz; FBGA200; -40÷105°C
Memory: 2Gb SDRAM
Clock frequency: 1.6GHz
Kind of memory: LPDDR4; SDRAM
Operating temperature: -40...105°C
Type of integrated circuit: DRAM memory
Memory organisation: 64Mx32bit
Case: FBGA200
Mounting: SMD
товар відсутній
AS4C64M4SA-6TIN |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 3.3V; 166MHz; 5ns; -40÷85°C
Mounting: SMD
Case: TSOP54 II
Kind of package: in-tray
Operating temperature: -40...85°C
Memory: 256Mb DRAM
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 5ns
Clock frequency: 166MHz
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 3.3V; 166MHz; 5ns; -40÷85°C
Mounting: SMD
Case: TSOP54 II
Kind of package: in-tray
Operating temperature: -40...85°C
Memory: 256Mb DRAM
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 5ns
Clock frequency: 166MHz
товар відсутній
AS4C64M4SA-6TINTR |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 3.3V; 166MHz; 5ns; -40÷85°C
Mounting: SMD
Case: TSOP54 II
Kind of package: reel
Operating temperature: -40...85°C
Memory: 256Mb DRAM
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 5ns
Clock frequency: 166MHz
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 3.3V; 166MHz; 5ns; -40÷85°C
Mounting: SMD
Case: TSOP54 II
Kind of package: reel
Operating temperature: -40...85°C
Memory: 256Mb DRAM
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 5ns
Clock frequency: 166MHz
товар відсутній
AS4C64M4SA-7TCN |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bitx4; 3.3V; 143MHz; 5.4ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bitx4; 3.3V; 143MHz; 5.4ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Operating voltage: 3.3V
товар відсутній
AS4C64M4SA-7TCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bitx4; 3.3V; 143MHz; 5.4ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bitx4; 3.3V; 143MHz; 5.4ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C64M4SA-6TIN |
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Виробник: Alliance Memory
DRAM SDRAM, 256M 64M X 4, 3.3V 54PIN TSOP II 166 MHZ INDUSTRIAL TEMP - Tray
DRAM SDRAM, 256M 64M X 4, 3.3V 54PIN TSOP II 166 MHZ INDUSTRIAL TEMP - Tray
на замовлення 68 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 376.38 грн |
10+ | 341.1 грн |
108+ | 251.62 грн |
540+ | 250.92 грн |
1080+ | 247.41 грн |
2592+ | 243.89 грн |
5076+ | 238.27 грн |
AS4C64M4SA-6TIN |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 3.3V; 166MHz; 5ns; -40÷85°C
Mounting: SMD
Case: TSOP54 II
Kind of package: in-tray
Operating temperature: -40...85°C
Memory: 256Mb DRAM
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 5ns
Clock frequency: 166MHz
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 3.3V; 166MHz; 5ns; -40÷85°C
Mounting: SMD
Case: TSOP54 II
Kind of package: in-tray
Operating temperature: -40...85°C
Memory: 256Mb DRAM
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 5ns
Clock frequency: 166MHz
кількість в упаковці: 1 шт
товар відсутній
AS4C64M4SA-6TINTR |
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Виробник: Alliance Memory
DRAM SDRAM, 256M 64M X 4, 3.3V 54PIN TSOP II 166 MHZ INDUSTRIAL TEMP - Tape & Reel
DRAM SDRAM, 256M 64M X 4, 3.3V 54PIN TSOP II 166 MHZ INDUSTRIAL TEMP - Tape & Reel
товар відсутній
AS4C64M4SA-6TINTR |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 3.3V; 166MHz; 5ns; -40÷85°C
Mounting: SMD
Case: TSOP54 II
Kind of package: reel
Operating temperature: -40...85°C
Memory: 256Mb DRAM
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 5ns
Clock frequency: 166MHz
кількість в упаковці: 1000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 3.3V; 166MHz; 5ns; -40÷85°C
Mounting: SMD
Case: TSOP54 II
Kind of package: reel
Operating temperature: -40...85°C
Memory: 256Mb DRAM
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 5ns
Clock frequency: 166MHz
кількість в упаковці: 1000 шт
товар відсутній
AS4C64M4SA-7TCN |
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Виробник: Alliance Memory
DRAM 256Mb, 3.3V, 143Mhz 64M x 4 SDRAM
DRAM 256Mb, 3.3V, 143Mhz 64M x 4 SDRAM
на замовлення 103 шт:
термін постачання 21-30 дні (днів)AS4C64M4SA-7TCN |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bitx4; 3.3V; 143MHz; 5.4ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bitx4; 3.3V; 143MHz; 5.4ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Operating voltage: 3.3V
товар відсутній
AS4C64M4SA-7TCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bitx4; 3.3V; 143MHz; 5.4ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bitx4; 3.3V; 143MHz; 5.4ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C64M8D1-5BCN |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; FBGA60; 0÷70°C; parallel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: FBGA60
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; FBGA60; 0÷70°C; parallel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: FBGA60
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
товар відсутній
AS4C64M8D1-5BCNTR |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 2.5V; 200MHz; FBGA60; 0÷70°C
Memory: 512Mb DRAM
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Operating temperature: 0...70°C
Type of integrated circuit: DRAM memory
Kind of package: reel
Memory organisation: 64Mx8bit
Operating voltage: 2.5V
Case: FBGA60
Mounting: SMD
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 2.5V; 200MHz; FBGA60; 0÷70°C
Memory: 512Mb DRAM
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Operating temperature: 0...70°C
Type of integrated circuit: DRAM memory
Kind of package: reel
Memory organisation: 64Mx8bit
Operating voltage: 2.5V
Case: FBGA60
Mounting: SMD
товар відсутній
AS4C64M8D1-5BIN |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; FBGA60; -40÷95°C; parallel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: FBGA60
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; FBGA60; -40÷95°C; parallel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: FBGA60
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
товар відсутній
AS4C64M8D1-5BINTR |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 2.5V; 200MHz; FBGA60; reel
Memory: 512Mb DRAM
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of package: reel
Memory organisation: 64Mx8bit
Operating voltage: 2.5V
Case: FBGA60
Mounting: SMD
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 2.5V; 200MHz; FBGA60; reel
Memory: 512Mb DRAM
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of package: reel
Memory organisation: 64Mx8bit
Operating voltage: 2.5V
Case: FBGA60
Mounting: SMD
товар відсутній
AS4C64M8D1-5TCN |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; 0÷70°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; 0÷70°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
товар відсутній
AS4C64M8D1-5TCNTR |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; 0÷70°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; 0÷70°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 2.5V
товар відсутній
AS4C64M8D1-5TIN |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
товар відсутній
AS4C64M8D1-5TINTR |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; -40÷95°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; -40÷95°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 2.5V
товар відсутній
AS4C64M8D1-5BCN |
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Виробник: Alliance Memory
DRAM DDR1, 512Mb, 64M x 8, 2.5v, 60ball TFBGA, 200MHz, Commercial Temp - Tray
DRAM DDR1, 512Mb, 64M x 8, 2.5v, 60ball TFBGA, 200MHz, Commercial Temp - Tray
на замовлення 240 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 376.38 грн |
10+ | 337.86 грн |
100+ | 260.06 грн |
240+ | 254.43 грн |
480+ | 250.22 грн |
1200+ | 245.3 грн |
2640+ | 239.67 грн |
AS4C64M8D1-5BCN |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; FBGA60; 0÷70°C; parallel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: FBGA60
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
кількість в упаковці: 240 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; FBGA60; 0÷70°C; parallel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: FBGA60
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
кількість в упаковці: 240 шт
товар відсутній
AS4C64M8D1-5BCNTR |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 2.5V; 200MHz; FBGA60; 0÷70°C
Memory: 512Mb DRAM
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Operating temperature: 0...70°C
Type of integrated circuit: DRAM memory
Kind of package: reel
Memory organisation: 64Mx8bit
Operating voltage: 2.5V
Case: FBGA60
Mounting: SMD
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 2.5V; 200MHz; FBGA60; 0÷70°C
Memory: 512Mb DRAM
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Operating temperature: 0...70°C
Type of integrated circuit: DRAM memory
Kind of package: reel
Memory organisation: 64Mx8bit
Operating voltage: 2.5V
Case: FBGA60
Mounting: SMD
кількість в упаковці: 2500 шт
товар відсутній
AS4C64M8D1-5BIN |
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Виробник: Alliance Memory
DRAM DDR1, 512Mb, 64M x 8, 2.5v, 60ball TFBGA, 200MHz, Industrial Temp - Tray
DRAM DDR1, 512Mb, 64M x 8, 2.5v, 60ball TFBGA, 200MHz, Industrial Temp - Tray
на замовлення 240 шт:
термін постачання 28-37 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 417.38 грн |
10+ | 328.16 грн |
100+ | 284.66 грн |
240+ | 266.38 грн |
480+ | 254.43 грн |
2640+ | 249.51 грн |
5040+ | 238.27 грн |
AS4C64M8D1-5BIN |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; FBGA60; -40÷95°C; parallel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: FBGA60
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
кількість в упаковці: 240 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; FBGA60; -40÷95°C; parallel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: FBGA60
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
кількість в упаковці: 240 шт
товар відсутній
AS4C64M8D1-5BINTR |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 2.5V; 200MHz; FBGA60; reel
Memory: 512Mb DRAM
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of package: reel
Memory organisation: 64Mx8bit
Operating voltage: 2.5V
Case: FBGA60
Mounting: SMD
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 2.5V; 200MHz; FBGA60; reel
Memory: 512Mb DRAM
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of package: reel
Memory organisation: 64Mx8bit
Operating voltage: 2.5V
Case: FBGA60
Mounting: SMD
кількість в упаковці: 2500 шт
товар відсутній
AS4C64M8D1-5TCN |
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Виробник: Alliance Memory
DRAM 512M, 2.5V, 200Mhz 64M x 8 DDR1
DRAM 512M, 2.5V, 200Mhz 64M x 8 DDR1
на замовлення 19 шт:
термін постачання 21-30 дні (днів)AS4C64M8D1-5TCN |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; 0÷70°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; 0÷70°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
товар відсутній
AS4C64M8D1-5TCNTR |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; 0÷70°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; 0÷70°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 2.5V
товар відсутній
AS4C64M8D1-5TIN |
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Виробник: Alliance Memory
DRAM DDR1, 512Mb, 64M x 8, 2.5V, 66pin TSOPII, 200MHz, Industrial Temp - Tray
DRAM DDR1, 512Mb, 64M x 8, 2.5V, 66pin TSOPII, 200MHz, Industrial Temp - Tray
на замовлення 76 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 392.78 грн |
10+ | 351.6 грн |
108+ | 266.38 грн |
2592+ | 264.98 грн |
5076+ | 263.57 грн |
10044+ | 262.17 грн |
AS4C64M8D1-5TIN |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
товар відсутній
AS4C64M8D1-5TINTR |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; -40÷95°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; -40÷95°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 2.5V
товар відсутній
AS4C64M8D2-25BAN |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60
Operating temperature: -40...105°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: in-tray
Memory: 512Mb DRAM
Mounting: SMD
Case: FBGA60
Operating voltage: 1.8V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60
Operating temperature: -40...105°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: in-tray
Memory: 512Mb DRAM
Mounting: SMD
Case: FBGA60
Operating voltage: 1.8V
товар відсутній
AS4C64M8D2-25BANTR |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60
Operating temperature: -40...105°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: reel
Memory: 512Mb DRAM
Mounting: SMD
Case: FBGA60
Operating voltage: 1.8V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60
Operating temperature: -40...105°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: reel
Memory: 512Mb DRAM
Mounting: SMD
Case: FBGA60
Operating voltage: 1.8V
товар відсутній
AS4C64M8D2-25BCN |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60
Operating temperature: 0...85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: in-tray
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: FBGA60
Operating voltage: 1.8V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60
Operating temperature: 0...85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: in-tray
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: FBGA60
Operating voltage: 1.8V
товар відсутній
AS4C64M8D2-25BCNTR |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60
Operating temperature: 0...85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: reel
Memory: 512Mb DRAM
Mounting: SMD
Case: FBGA60
Operating voltage: 1.8V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60
Operating temperature: 0...85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: reel
Memory: 512Mb DRAM
Mounting: SMD
Case: FBGA60
Operating voltage: 1.8V
товар відсутній
AS4C64M8D2-25BIN |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: in-tray
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: FBGA60
Operating voltage: 1.8V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: in-tray
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: FBGA60
Operating voltage: 1.8V
товар відсутній
AS4C64M8D2-25BINTR |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: reel
Memory: 512Mb DRAM
Mounting: SMD
Case: FBGA60
Operating voltage: 1.8V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: reel
Memory: 512Mb DRAM
Mounting: SMD
Case: FBGA60
Operating voltage: 1.8V
товар відсутній
AS4C64M8D2-25BAN |
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Виробник: Alliance Memory
DRAM 512M, 1.8V, 400Mhz 64M x 8 DDR2
DRAM 512M, 1.8V, 400Mhz 64M x 8 DDR2
на замовлення 142 шт:
термін постачання 21-30 дні (днів)AS4C64M8D2-25BAN |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60
Operating temperature: -40...105°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: in-tray
Memory: 512Mb DRAM
Mounting: SMD
Case: FBGA60
Operating voltage: 1.8V
кількість в упаковці: 264 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60
Operating temperature: -40...105°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: in-tray
Memory: 512Mb DRAM
Mounting: SMD
Case: FBGA60
Operating voltage: 1.8V
кількість в упаковці: 264 шт
товар відсутній
AS4C64M8D2-25BANTR |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60
Operating temperature: -40...105°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: reel
Memory: 512Mb DRAM
Mounting: SMD
Case: FBGA60
Operating voltage: 1.8V
кількість в упаковці: 2000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60
Operating temperature: -40...105°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: reel
Memory: 512Mb DRAM
Mounting: SMD
Case: FBGA60
Operating voltage: 1.8V
кількість в упаковці: 2000 шт
товар відсутній
AS4C64M8D2-25BCN |
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Виробник: Alliance Memory
DRAM 512M, 1.8V, 400Mhz 64M x 8 DDR2
DRAM 512M, 1.8V, 400Mhz 64M x 8 DDR2
на замовлення 164 шт:
термін постачання 21-30 дні (днів)AS4C64M8D2-25BCN |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60
Operating temperature: 0...85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: in-tray
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: FBGA60
Operating voltage: 1.8V
кількість в упаковці: 264 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60
Operating temperature: 0...85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: in-tray
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: FBGA60
Operating voltage: 1.8V
кількість в упаковці: 264 шт
товар відсутній
AS4C64M8D2-25BCNTR |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60
Operating temperature: 0...85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: reel
Memory: 512Mb DRAM
Mounting: SMD
Case: FBGA60
Operating voltage: 1.8V
кількість в упаковці: 2000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60
Operating temperature: 0...85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: reel
Memory: 512Mb DRAM
Mounting: SMD
Case: FBGA60
Operating voltage: 1.8V
кількість в упаковці: 2000 шт
товар відсутній
AS4C64M8D2-25BIN |
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Виробник: Alliance Memory
DRAM 512M, 1.8V, 400Mhz 64M x 8 DDR2
DRAM 512M, 1.8V, 400Mhz 64M x 8 DDR2
на замовлення 1036 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 498.56 грн |
10+ | 448.6 грн |
25+ | 380.25 грн |
50+ | 370.41 грн |
AS4C64M8D2-25BIN |
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Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C64M8D2-25BIN - DRAM, DDR2, 512 Mbit, 64M x 8 Bit, 400 MHz, FBGA, 60 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: DDR2
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: FBGA
Speicherdichte: 512Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 1.8V
Taktfrequenz, max.: 400MHz
Betriebstemperatur, min.: -40°C
euEccn: NLR
Anzahl der Pins: 60Pin(s)
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 95°C
Speicherkonfiguration: 64M x 8 Bit
SVHC: No SVHC (14-Jun-2023)
Description: ALLIANCE MEMORY - AS4C64M8D2-25BIN - DRAM, DDR2, 512 Mbit, 64M x 8 Bit, 400 MHz, FBGA, 60 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: DDR2
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: FBGA
Speicherdichte: 512Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 1.8V
Taktfrequenz, max.: 400MHz
Betriebstemperatur, min.: -40°C
euEccn: NLR
Anzahl der Pins: 60Pin(s)
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 95°C
Speicherkonfiguration: 64M x 8 Bit
SVHC: No SVHC (14-Jun-2023)
на замовлення 254 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 476.23 грн |
10+ | 393.44 грн |
25+ | 376.88 грн |
50+ | 335.32 грн |
100+ | 295.34 грн |
250+ | 293.98 грн |
AS4C64M8D2-25BIN |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: in-tray
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: FBGA60
Operating voltage: 1.8V
кількість в упаковці: 264 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: in-tray
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: FBGA60
Operating voltage: 1.8V
кількість в упаковці: 264 шт
товар відсутній
AS4C64M8D2-25BINTR |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: reel
Memory: 512Mb DRAM
Mounting: SMD
Case: FBGA60
Operating voltage: 1.8V
кількість в упаковці: 2000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: reel
Memory: 512Mb DRAM
Mounting: SMD
Case: FBGA60
Operating voltage: 1.8V
кількість в упаковці: 2000 шт
товар відсутній