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AS4C64M32MD2A-25BINTR Alliance Memory 20180221_AllianceMemory_2Gb_LPDDR2_AS4C64M32MD2A_A-1324401.pdf DRAM LPDDR2, 2G, 64M X 32, 1.2V, 134ball BGA (A-DIE), INDUSTRIAL TEMP - Tape & Reel
товар відсутній
AS4C64M32MD2A-25BINTR ALLIANCE MEMORY AS4C64M32MD2A.pdf Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 64Mx32bit; 1.2÷1.8V; 400MHz; 18ns; reel
Operating temperature: -40...85°C
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR2; SDRAM
Memory organisation: 64Mx32bit
Access time: 18ns
Clock frequency: 400MHz
Kind of package: reel
Kind of interface: parallel
Memory: 2Gb DRAM
Mounting: SMD
Case: FBGA134
Operating voltage: 1.2...1.8V
кількість в упаковці: 2000 шт
товар відсутній
AS4C64M32MD4-062BAN ALLIANCE MEMORY Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbSDRAM; 64Mx32bit; 1.6GHz; FBGA200; -40÷105°C
Memory: 2Gb SDRAM
Clock frequency: 1.6GHz
Kind of memory: LPDDR4; SDRAM
Operating temperature: -40...105°C
Type of integrated circuit: DRAM memory
Memory organisation: 64Mx32bit
Case: FBGA200
Mounting: SMD
товар відсутній
AS4C64M4SA-6TIN AS4C64M4SA-6TIN ALLIANCE MEMORY AS4C64M4SA-6TIN.pdf Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 3.3V; 166MHz; 5ns; -40÷85°C
Mounting: SMD
Case: TSOP54 II
Kind of package: in-tray
Operating temperature: -40...85°C
Memory: 256Mb DRAM
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 5ns
Clock frequency: 166MHz
товар відсутній
AS4C64M4SA-6TINTR AS4C64M4SA-6TINTR ALLIANCE MEMORY Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 3.3V; 166MHz; 5ns; -40÷85°C
Mounting: SMD
Case: TSOP54 II
Kind of package: reel
Operating temperature: -40...85°C
Memory: 256Mb DRAM
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 5ns
Clock frequency: 166MHz
товар відсутній
AS4C64M4SA-7TCN AS4C64M4SA-7TCN ALLIANCE MEMORY AllianceMemory_256M_AS4C64M4SA-6TIN-7TCN_June2017_v1.0.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bitx4; 3.3V; 143MHz; 5.4ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Operating voltage: 3.3V
товар відсутній
AS4C64M4SA-7TCNTR AS4C64M4SA-7TCNTR ALLIANCE MEMORY Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bitx4; 3.3V; 143MHz; 5.4ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C64M4SA-6TIN AS4C64M4SA-6TIN Alliance Memory AllianceMemory_256M_AS4C64M4SA-6TIN-7TCN_June2017_-1222919.pdf DRAM SDRAM, 256M 64M X 4, 3.3V 54PIN TSOP II 166 MHZ INDUSTRIAL TEMP - Tray
на замовлення 68 шт:
термін постачання 21-30 дні (днів)
1+376.38 грн
10+ 341.1 грн
108+ 251.62 грн
540+ 250.92 грн
1080+ 247.41 грн
2592+ 243.89 грн
5076+ 238.27 грн
AS4C64M4SA-6TIN AS4C64M4SA-6TIN ALLIANCE MEMORY AS4C64M4SA-6TIN.pdf Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 3.3V; 166MHz; 5ns; -40÷85°C
Mounting: SMD
Case: TSOP54 II
Kind of package: in-tray
Operating temperature: -40...85°C
Memory: 256Mb DRAM
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 5ns
Clock frequency: 166MHz
кількість в упаковці: 1 шт
товар відсутній
AS4C64M4SA-6TINTR AS4C64M4SA-6TINTR Alliance Memory AllianceMemory_256M_AS4C64M4SA-6TIN-7TCN_June2017_-1222919.pdf DRAM SDRAM, 256M 64M X 4, 3.3V 54PIN TSOP II 166 MHZ INDUSTRIAL TEMP - Tape & Reel
товар відсутній
AS4C64M4SA-6TINTR AS4C64M4SA-6TINTR ALLIANCE MEMORY Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 3.3V; 166MHz; 5ns; -40÷85°C
Mounting: SMD
Case: TSOP54 II
Kind of package: reel
Operating temperature: -40...85°C
Memory: 256Mb DRAM
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 5ns
Clock frequency: 166MHz
кількість в упаковці: 1000 шт
товар відсутній
AS4C64M4SA-7TCN AS4C64M4SA-7TCN Alliance Memory AllianceMemory_256M_AS4C64M4SA-6TIN-7TCN_June2017_-1222919.pdf DRAM 256Mb, 3.3V, 143Mhz 64M x 4 SDRAM
на замовлення 103 шт:
термін постачання 21-30 дні (днів)
AS4C64M4SA-7TCN AS4C64M4SA-7TCN ALLIANCE MEMORY AllianceMemory_256M_AS4C64M4SA-6TIN-7TCN_June2017_v1.0.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bitx4; 3.3V; 143MHz; 5.4ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Operating voltage: 3.3V
товар відсутній
AS4C64M4SA-7TCNTR Alliance Memory AllianceMemory_256M_AS4C64M4SA-6TIN-7TCN_June2017_-1222919.pdf DRAM 256Mb, 3.3V, 143Mhz 64M x 4 SDRAM
товар відсутній
AS4C64M4SA-7TCNTR AS4C64M4SA-7TCNTR ALLIANCE MEMORY Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bitx4; 3.3V; 143MHz; 5.4ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C64M4SA-7TIN Alliance Memory DRAM 256Mb, 3.3V, 166Mhz 64M x 4 SDRAM
товар відсутній
AS4C64M4SA-7TINTR Alliance Memory DRAM 256Mb, 3.3V, 166Mhz 64M x 4 SDRAM
товар відсутній
AS4C64M8D1-5BCN ALLIANCE MEMORY 4C128M16D2-25BCNTR-DTE.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; FBGA60; 0÷70°C; parallel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: FBGA60
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
товар відсутній
AS4C64M8D1-5BCNTR ALLIANCE MEMORY Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 2.5V; 200MHz; FBGA60; 0÷70°C
Memory: 512Mb DRAM
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Operating temperature: 0...70°C
Type of integrated circuit: DRAM memory
Kind of package: reel
Memory organisation: 64Mx8bit
Operating voltage: 2.5V
Case: FBGA60
Mounting: SMD
товар відсутній
AS4C64M8D1-5BIN ALLIANCE MEMORY 4C128M16D2-25BCNTR-DTE.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; FBGA60; -40÷95°C; parallel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: FBGA60
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
товар відсутній
AS4C64M8D1-5BINTR ALLIANCE MEMORY Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 2.5V; 200MHz; FBGA60; reel
Memory: 512Mb DRAM
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of package: reel
Memory organisation: 64Mx8bit
Operating voltage: 2.5V
Case: FBGA60
Mounting: SMD
товар відсутній
AS4C64M8D1-5TCN ALLIANCE MEMORY 512Mb_DDR1_AS4C64M8D1-5T(CI)N-5B(CI)N--DDR_rev1.0_C-G_I-G.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; 0÷70°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
товар відсутній
AS4C64M8D1-5TCNTR ALLIANCE MEMORY 512Mb_DDR1_AS4C64M8D1-5T(CI)N-5B(CI)N--DDR_rev1.0_C-G_I-G.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; 0÷70°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 2.5V
товар відсутній
AS4C64M8D1-5TIN ALLIANCE MEMORY 512M-AS4C64M8D1.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
товар відсутній
AS4C64M8D1-5TINTR ALLIANCE MEMORY 512M-AS4C64M8D1.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; -40÷95°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 2.5V
товар відсутній
AS4C64M8D1-5BCN AS4C64M8D1-5BCN Alliance Memory 512Mb_DDR1_AS4C64M8D1-5T(CI)N-5B(CI)N--DDR_rev1.0_-1288480.pdf DRAM DDR1, 512Mb, 64M x 8, 2.5v, 60ball TFBGA, 200MHz, Commercial Temp - Tray
на замовлення 240 шт:
термін постачання 21-30 дні (днів)
1+376.38 грн
10+ 337.86 грн
100+ 260.06 грн
240+ 254.43 грн
480+ 250.22 грн
1200+ 245.3 грн
2640+ 239.67 грн
AS4C64M8D1-5BCN ALLIANCE MEMORY 4C128M16D2-25BCNTR-DTE.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; FBGA60; 0÷70°C; parallel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: FBGA60
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
кількість в упаковці: 240 шт
товар відсутній
AS4C64M8D1-5BCNTR Alliance Memory 512Mb_DDR1_AS4C64M8D1-5T(CI)N-5B(CI)N--DDR_rev1.0_-1288480.pdf DRAM 512M, 2.5V, 200Mhz 64M x 8 DDR1
товар відсутній
AS4C64M8D1-5BCNTR ALLIANCE MEMORY Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 2.5V; 200MHz; FBGA60; 0÷70°C
Memory: 512Mb DRAM
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Operating temperature: 0...70°C
Type of integrated circuit: DRAM memory
Kind of package: reel
Memory organisation: 64Mx8bit
Operating voltage: 2.5V
Case: FBGA60
Mounting: SMD
кількість в упаковці: 2500 шт
товар відсутній
AS4C64M8D1-5BIN AS4C64M8D1-5BIN Alliance Memory 512Mb_DDR1_AS4C64M8D1-5T(CI)N-5B(CI)N--DDR_rev1.0_-1288480.pdf DRAM DDR1, 512Mb, 64M x 8, 2.5v, 60ball TFBGA, 200MHz, Industrial Temp - Tray
на замовлення 240 шт:
термін постачання 28-37 дні (днів)
1+417.38 грн
10+ 328.16 грн
100+ 284.66 грн
240+ 266.38 грн
480+ 254.43 грн
2640+ 249.51 грн
5040+ 238.27 грн
AS4C64M8D1-5BIN ALLIANCE MEMORY 4C128M16D2-25BCNTR-DTE.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; FBGA60; -40÷95°C; parallel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: FBGA60
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
кількість в упаковці: 240 шт
товар відсутній
AS4C64M8D1-5BINTR Alliance Memory 512Mb_DDR1_AS4C64M8D1-5T(CI)N-5B(CI)N--DDR_rev1.0_-1288480.pdf DRAM 512M, 2.5V, 200Mhz 64M x 8 DDR1
товар відсутній
AS4C64M8D1-5BINTR ALLIANCE MEMORY Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 2.5V; 200MHz; FBGA60; reel
Memory: 512Mb DRAM
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of package: reel
Memory organisation: 64Mx8bit
Operating voltage: 2.5V
Case: FBGA60
Mounting: SMD
кількість в упаковці: 2500 шт
товар відсутній
AS4C64M8D1-5TCN Alliance Memory 512Mb_DDR1_AS4C64M8D1-5T(CI)N-5B(CI)N--DDR_rev1.0_-1288480.pdf DRAM 512M, 2.5V, 200Mhz 64M x 8 DDR1
на замовлення 19 шт:
термін постачання 21-30 дні (днів)
AS4C64M8D1-5TCN ALLIANCE MEMORY 512Mb_DDR1_AS4C64M8D1-5T(CI)N-5B(CI)N--DDR_rev1.0_C-G_I-G.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; 0÷70°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
товар відсутній
AS4C64M8D1-5TCNTR Alliance Memory 512Mb_DDR1_AS4C64M8D1-5T(CI)N-5B(CI)N--DDR_rev1.0_-1288480.pdf DRAM 512M, 2.5V, 200Mhz 64M x 8 DDR1
товар відсутній
AS4C64M8D1-5TCNTR ALLIANCE MEMORY 512Mb_DDR1_AS4C64M8D1-5T(CI)N-5B(CI)N--DDR_rev1.0_C-G_I-G.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; 0÷70°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 2.5V
товар відсутній
AS4C64M8D1-5TIN AS4C64M8D1-5TIN Alliance Memory 512Mb_DDR1_AS4C64M8D1-5T(CI)N-5B(CI)N--DDR_rev1.0_-1288480.pdf DRAM DDR1, 512Mb, 64M x 8, 2.5V, 66pin TSOPII, 200MHz, Industrial Temp - Tray
на замовлення 76 шт:
термін постачання 21-30 дні (днів)
1+392.78 грн
10+ 351.6 грн
108+ 266.38 грн
2592+ 264.98 грн
5076+ 263.57 грн
10044+ 262.17 грн
AS4C64M8D1-5TIN ALLIANCE MEMORY 512M-AS4C64M8D1.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
товар відсутній
AS4C64M8D1-5TINTR AS4C64M8D1-5TINTR Alliance Memory 512Mb_DDR1_AS4C64M8D1-5T(CI)N-5B(CI)N--DDR_rev1.0_-1288480.pdf DRAM
товар відсутній
AS4C64M8D1-5TINTR ALLIANCE MEMORY 512M-AS4C64M8D1.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; -40÷95°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 2.5V
товар відсутній
AS4C64M8D2-25BAN ALLIANCE MEMORY Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60
Operating temperature: -40...105°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: in-tray
Memory: 512Mb DRAM
Mounting: SMD
Case: FBGA60
Operating voltage: 1.8V
товар відсутній
AS4C64M8D2-25BANTR ALLIANCE MEMORY Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60
Operating temperature: -40...105°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: reel
Memory: 512Mb DRAM
Mounting: SMD
Case: FBGA60
Operating voltage: 1.8V
товар відсутній
AS4C64M8D2-25BCN ALLIANCE MEMORY Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60
Operating temperature: 0...85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: in-tray
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: FBGA60
Operating voltage: 1.8V
товар відсутній
AS4C64M8D2-25BCNTR ALLIANCE MEMORY Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60
Operating temperature: 0...85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: reel
Memory: 512Mb DRAM
Mounting: SMD
Case: FBGA60
Operating voltage: 1.8V
товар відсутній
AS4C64M8D2-25BIN ALLIANCE MEMORY Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: in-tray
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: FBGA60
Operating voltage: 1.8V
товар відсутній
AS4C64M8D2-25BINTR ALLIANCE MEMORY Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: reel
Memory: 512Mb DRAM
Mounting: SMD
Case: FBGA60
Operating voltage: 1.8V
товар відсутній
AS4C64M8D2-25BAN AS4C64M8D2-25BAN Alliance Memory AS4C64M8D2-25BAN 512Mb x8 DDR2 A-Grade2 _Rev 1.0-1221660.pdf DRAM 512M, 1.8V, 400Mhz 64M x 8 DDR2
на замовлення 142 шт:
термін постачання 21-30 дні (днів)
AS4C64M8D2-25BAN ALLIANCE MEMORY Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60
Operating temperature: -40...105°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: in-tray
Memory: 512Mb DRAM
Mounting: SMD
Case: FBGA60
Operating voltage: 1.8V
кількість в упаковці: 264 шт
товар відсутній
AS4C64M8D2-25BANTR Alliance Memory AS4C64M8D2-25BAN%20512Mb%20x8%20DDR2%20A-Grade2%20_Rev%201.0-1221660.pdf DRAM 512M, 1.8V, 400Mhz 64M x 8 DDR2
товар відсутній
AS4C64M8D2-25BANTR ALLIANCE MEMORY Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60
Operating temperature: -40...105°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: reel
Memory: 512Mb DRAM
Mounting: SMD
Case: FBGA60
Operating voltage: 1.8V
кількість в упаковці: 2000 шт
товар відсутній
AS4C64M8D2-25BCN AS4C64M8D2-25BCN Alliance Memory 512M-AS4C64M8D2_V1.1-1221681.pdf DRAM 512M, 1.8V, 400Mhz 64M x 8 DDR2
на замовлення 164 шт:
термін постачання 21-30 дні (днів)
AS4C64M8D2-25BCN ALLIANCE MEMORY Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60
Operating temperature: 0...85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: in-tray
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: FBGA60
Operating voltage: 1.8V
кількість в упаковці: 264 шт
товар відсутній
AS4C64M8D2-25BCNTR AS4C64M8D2-25BCNTR Alliance Memory 512M-AS4C64M8D2_V1.1-1221681.pdf DRAM 512M, 1.8V, 400Mhz 64M x 8 DDR2
товар відсутній
AS4C64M8D2-25BCNTR ALLIANCE MEMORY Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60
Operating temperature: 0...85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: reel
Memory: 512Mb DRAM
Mounting: SMD
Case: FBGA60
Operating voltage: 1.8V
кількість в упаковці: 2000 шт
товар відсутній
AS4C64M8D2-25BIN AS4C64M8D2-25BIN Alliance Memory 512M-AS4C64M8D2_V1.1-1221681.pdf DRAM 512M, 1.8V, 400Mhz 64M x 8 DDR2
на замовлення 1036 шт:
термін постачання 21-30 дні (днів)
1+498.56 грн
10+ 448.6 грн
25+ 380.25 грн
50+ 370.41 грн
AS4C64M8D2-25BIN AS4C64M8D2-25BIN ALLIANCE MEMORY 3999948.pdf Description: ALLIANCE MEMORY - AS4C64M8D2-25BIN - DRAM, DDR2, 512 Mbit, 64M x 8 Bit, 400 MHz, FBGA, 60 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: DDR2
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: FBGA
Speicherdichte: 512Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 1.8V
Taktfrequenz, max.: 400MHz
Betriebstemperatur, min.: -40°C
euEccn: NLR
Anzahl der Pins: 60Pin(s)
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 95°C
Speicherkonfiguration: 64M x 8 Bit
SVHC: No SVHC (14-Jun-2023)
на замовлення 254 шт:
термін постачання 21-31 дні (днів)
2+476.23 грн
10+ 393.44 грн
25+ 376.88 грн
50+ 335.32 грн
100+ 295.34 грн
250+ 293.98 грн
Мінімальне замовлення: 2
AS4C64M8D2-25BIN ALLIANCE MEMORY Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: in-tray
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: FBGA60
Operating voltage: 1.8V
кількість в упаковці: 264 шт
товар відсутній
AS4C64M8D2-25BINTR AS4C64M8D2-25BINTR Alliance Memory 512M-AS4C64M8D2_V1.1-1221681.pdf DRAM 512M, 1.8V, 400Mhz 64M x 8 DDR2
товар відсутній
AS4C64M8D2-25BINTR ALLIANCE MEMORY Alliance_Selection_Guide _Print2024.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: reel
Memory: 512Mb DRAM
Mounting: SMD
Case: FBGA60
Operating voltage: 1.8V
кількість в упаковці: 2000 шт
товар відсутній
AS4C64M32MD2A-25BINTR 20180221_AllianceMemory_2Gb_LPDDR2_AS4C64M32MD2A_A-1324401.pdf
Виробник: Alliance Memory
DRAM LPDDR2, 2G, 64M X 32, 1.2V, 134ball BGA (A-DIE), INDUSTRIAL TEMP - Tape & Reel
товар відсутній
AS4C64M32MD2A-25BINTR AS4C64M32MD2A.pdf Alliance_Selection_Guide _Print2024.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 64Mx32bit; 1.2÷1.8V; 400MHz; 18ns; reel
Operating temperature: -40...85°C
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR2; SDRAM
Memory organisation: 64Mx32bit
Access time: 18ns
Clock frequency: 400MHz
Kind of package: reel
Kind of interface: parallel
Memory: 2Gb DRAM
Mounting: SMD
Case: FBGA134
Operating voltage: 1.2...1.8V
кількість в упаковці: 2000 шт
товар відсутній
AS4C64M32MD4-062BAN
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbSDRAM; 64Mx32bit; 1.6GHz; FBGA200; -40÷105°C
Memory: 2Gb SDRAM
Clock frequency: 1.6GHz
Kind of memory: LPDDR4; SDRAM
Operating temperature: -40...105°C
Type of integrated circuit: DRAM memory
Memory organisation: 64Mx32bit
Case: FBGA200
Mounting: SMD
товар відсутній
AS4C64M4SA-6TIN AS4C64M4SA-6TIN.pdf Alliance_Selection_Guide _Print2024.pdf
AS4C64M4SA-6TIN
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 3.3V; 166MHz; 5ns; -40÷85°C
Mounting: SMD
Case: TSOP54 II
Kind of package: in-tray
Operating temperature: -40...85°C
Memory: 256Mb DRAM
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 5ns
Clock frequency: 166MHz
товар відсутній
AS4C64M4SA-6TINTR Alliance_Selection_Guide _Print2024.pdf
AS4C64M4SA-6TINTR
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 3.3V; 166MHz; 5ns; -40÷85°C
Mounting: SMD
Case: TSOP54 II
Kind of package: reel
Operating temperature: -40...85°C
Memory: 256Mb DRAM
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 5ns
Clock frequency: 166MHz
товар відсутній
AS4C64M4SA-7TCN AllianceMemory_256M_AS4C64M4SA-6TIN-7TCN_June2017_v1.0.pdf
AS4C64M4SA-7TCN
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bitx4; 3.3V; 143MHz; 5.4ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Operating voltage: 3.3V
товар відсутній
AS4C64M4SA-7TCNTR
AS4C64M4SA-7TCNTR
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bitx4; 3.3V; 143MHz; 5.4ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C64M4SA-6TIN AllianceMemory_256M_AS4C64M4SA-6TIN-7TCN_June2017_-1222919.pdf
AS4C64M4SA-6TIN
Виробник: Alliance Memory
DRAM SDRAM, 256M 64M X 4, 3.3V 54PIN TSOP II 166 MHZ INDUSTRIAL TEMP - Tray
на замовлення 68 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+376.38 грн
10+ 341.1 грн
108+ 251.62 грн
540+ 250.92 грн
1080+ 247.41 грн
2592+ 243.89 грн
5076+ 238.27 грн
AS4C64M4SA-6TIN AS4C64M4SA-6TIN.pdf Alliance_Selection_Guide _Print2024.pdf
AS4C64M4SA-6TIN
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 3.3V; 166MHz; 5ns; -40÷85°C
Mounting: SMD
Case: TSOP54 II
Kind of package: in-tray
Operating temperature: -40...85°C
Memory: 256Mb DRAM
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 5ns
Clock frequency: 166MHz
кількість в упаковці: 1 шт
товар відсутній
AS4C64M4SA-6TINTR AllianceMemory_256M_AS4C64M4SA-6TIN-7TCN_June2017_-1222919.pdf
AS4C64M4SA-6TINTR
Виробник: Alliance Memory
DRAM SDRAM, 256M 64M X 4, 3.3V 54PIN TSOP II 166 MHZ INDUSTRIAL TEMP - Tape & Reel
товар відсутній
AS4C64M4SA-6TINTR Alliance_Selection_Guide _Print2024.pdf
AS4C64M4SA-6TINTR
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 3.3V; 166MHz; 5ns; -40÷85°C
Mounting: SMD
Case: TSOP54 II
Kind of package: reel
Operating temperature: -40...85°C
Memory: 256Mb DRAM
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Access time: 5ns
Clock frequency: 166MHz
кількість в упаковці: 1000 шт
товар відсутній
AS4C64M4SA-7TCN AllianceMemory_256M_AS4C64M4SA-6TIN-7TCN_June2017_-1222919.pdf
AS4C64M4SA-7TCN
Виробник: Alliance Memory
DRAM 256Mb, 3.3V, 143Mhz 64M x 4 SDRAM
на замовлення 103 шт:
термін постачання 21-30 дні (днів)
AS4C64M4SA-7TCN AllianceMemory_256M_AS4C64M4SA-6TIN-7TCN_June2017_v1.0.pdf
AS4C64M4SA-7TCN
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bitx4; 3.3V; 143MHz; 5.4ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Operating voltage: 3.3V
товар відсутній
AS4C64M4SA-7TCNTR AllianceMemory_256M_AS4C64M4SA-6TIN-7TCN_June2017_-1222919.pdf
Виробник: Alliance Memory
DRAM 256Mb, 3.3V, 143Mhz 64M x 4 SDRAM
товар відсутній
AS4C64M4SA-7TCNTR
AS4C64M4SA-7TCNTR
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx16bitx4; 3.3V; 143MHz; 5.4ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C64M4SA-7TIN
Виробник: Alliance Memory
DRAM 256Mb, 3.3V, 166Mhz 64M x 4 SDRAM
товар відсутній
AS4C64M4SA-7TINTR
Виробник: Alliance Memory
DRAM 256Mb, 3.3V, 166Mhz 64M x 4 SDRAM
товар відсутній
AS4C64M8D1-5BCN 4C128M16D2-25BCNTR-DTE.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; FBGA60; 0÷70°C; parallel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: FBGA60
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
товар відсутній
AS4C64M8D1-5BCNTR Alliance_Selection_Guide _Print2024.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 2.5V; 200MHz; FBGA60; 0÷70°C
Memory: 512Mb DRAM
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Operating temperature: 0...70°C
Type of integrated circuit: DRAM memory
Kind of package: reel
Memory organisation: 64Mx8bit
Operating voltage: 2.5V
Case: FBGA60
Mounting: SMD
товар відсутній
AS4C64M8D1-5BIN 4C128M16D2-25BCNTR-DTE.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; FBGA60; -40÷95°C; parallel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: FBGA60
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
товар відсутній
AS4C64M8D1-5BINTR Alliance_Selection_Guide _Print2024.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 2.5V; 200MHz; FBGA60; reel
Memory: 512Mb DRAM
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of package: reel
Memory organisation: 64Mx8bit
Operating voltage: 2.5V
Case: FBGA60
Mounting: SMD
товар відсутній
AS4C64M8D1-5TCN 512Mb_DDR1_AS4C64M8D1-5T(CI)N-5B(CI)N--DDR_rev1.0_C-G_I-G.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; 0÷70°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
товар відсутній
AS4C64M8D1-5TCNTR 512Mb_DDR1_AS4C64M8D1-5T(CI)N-5B(CI)N--DDR_rev1.0_C-G_I-G.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; 0÷70°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 2.5V
товар відсутній
AS4C64M8D1-5TIN 512M-AS4C64M8D1.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
товар відсутній
AS4C64M8D1-5TINTR 512M-AS4C64M8D1.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; -40÷95°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 2.5V
товар відсутній
AS4C64M8D1-5BCN 512Mb_DDR1_AS4C64M8D1-5T(CI)N-5B(CI)N--DDR_rev1.0_-1288480.pdf
AS4C64M8D1-5BCN
Виробник: Alliance Memory
DRAM DDR1, 512Mb, 64M x 8, 2.5v, 60ball TFBGA, 200MHz, Commercial Temp - Tray
на замовлення 240 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+376.38 грн
10+ 337.86 грн
100+ 260.06 грн
240+ 254.43 грн
480+ 250.22 грн
1200+ 245.3 грн
2640+ 239.67 грн
AS4C64M8D1-5BCN 4C128M16D2-25BCNTR-DTE.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; FBGA60; 0÷70°C; parallel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: FBGA60
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
кількість в упаковці: 240 шт
товар відсутній
AS4C64M8D1-5BCNTR 512Mb_DDR1_AS4C64M8D1-5T(CI)N-5B(CI)N--DDR_rev1.0_-1288480.pdf
Виробник: Alliance Memory
DRAM 512M, 2.5V, 200Mhz 64M x 8 DDR1
товар відсутній
AS4C64M8D1-5BCNTR Alliance_Selection_Guide _Print2024.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 2.5V; 200MHz; FBGA60; 0÷70°C
Memory: 512Mb DRAM
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Operating temperature: 0...70°C
Type of integrated circuit: DRAM memory
Kind of package: reel
Memory organisation: 64Mx8bit
Operating voltage: 2.5V
Case: FBGA60
Mounting: SMD
кількість в упаковці: 2500 шт
товар відсутній
AS4C64M8D1-5BIN 512Mb_DDR1_AS4C64M8D1-5T(CI)N-5B(CI)N--DDR_rev1.0_-1288480.pdf
AS4C64M8D1-5BIN
Виробник: Alliance Memory
DRAM DDR1, 512Mb, 64M x 8, 2.5v, 60ball TFBGA, 200MHz, Industrial Temp - Tray
на замовлення 240 шт:
термін постачання 28-37 дні (днів)
Кількість Ціна без ПДВ
1+417.38 грн
10+ 328.16 грн
100+ 284.66 грн
240+ 266.38 грн
480+ 254.43 грн
2640+ 249.51 грн
5040+ 238.27 грн
AS4C64M8D1-5BIN 4C128M16D2-25BCNTR-DTE.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; FBGA60; -40÷95°C; parallel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: FBGA60
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
кількість в упаковці: 240 шт
товар відсутній
AS4C64M8D1-5BINTR 512Mb_DDR1_AS4C64M8D1-5T(CI)N-5B(CI)N--DDR_rev1.0_-1288480.pdf
Виробник: Alliance Memory
DRAM 512M, 2.5V, 200Mhz 64M x 8 DDR1
товар відсутній
AS4C64M8D1-5BINTR Alliance_Selection_Guide _Print2024.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 2.5V; 200MHz; FBGA60; reel
Memory: 512Mb DRAM
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of package: reel
Memory organisation: 64Mx8bit
Operating voltage: 2.5V
Case: FBGA60
Mounting: SMD
кількість в упаковці: 2500 шт
товар відсутній
AS4C64M8D1-5TCN 512Mb_DDR1_AS4C64M8D1-5T(CI)N-5B(CI)N--DDR_rev1.0_-1288480.pdf
Виробник: Alliance Memory
DRAM 512M, 2.5V, 200Mhz 64M x 8 DDR1
на замовлення 19 шт:
термін постачання 21-30 дні (днів)
AS4C64M8D1-5TCN 512Mb_DDR1_AS4C64M8D1-5T(CI)N-5B(CI)N--DDR_rev1.0_C-G_I-G.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; 0÷70°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
товар відсутній
AS4C64M8D1-5TCNTR 512Mb_DDR1_AS4C64M8D1-5T(CI)N-5B(CI)N--DDR_rev1.0_-1288480.pdf
Виробник: Alliance Memory
DRAM 512M, 2.5V, 200Mhz 64M x 8 DDR1
товар відсутній
AS4C64M8D1-5TCNTR 512Mb_DDR1_AS4C64M8D1-5T(CI)N-5B(CI)N--DDR_rev1.0_C-G_I-G.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; 0÷70°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 2.5V
товар відсутній
AS4C64M8D1-5TIN 512Mb_DDR1_AS4C64M8D1-5T(CI)N-5B(CI)N--DDR_rev1.0_-1288480.pdf
AS4C64M8D1-5TIN
Виробник: Alliance Memory
DRAM DDR1, 512Mb, 64M x 8, 2.5V, 66pin TSOPII, 200MHz, Industrial Temp - Tray
на замовлення 76 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+392.78 грн
10+ 351.6 грн
108+ 266.38 грн
2592+ 264.98 грн
5076+ 263.57 грн
10044+ 262.17 грн
AS4C64M8D1-5TIN 512M-AS4C64M8D1.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
товар відсутній
AS4C64M8D1-5TINTR 512Mb_DDR1_AS4C64M8D1-5T(CI)N-5B(CI)N--DDR_rev1.0_-1288480.pdf
AS4C64M8D1-5TINTR
Виробник: Alliance Memory
DRAM
товар відсутній
AS4C64M8D1-5TINTR 512M-AS4C64M8D1.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64Mx8bit; 2.5V; 200MHz; TSOP66 II; -40÷95°C; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 64Mx8bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 2.5V
товар відсутній
AS4C64M8D2-25BAN Alliance_Selection_Guide _Print2024.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60
Operating temperature: -40...105°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: in-tray
Memory: 512Mb DRAM
Mounting: SMD
Case: FBGA60
Operating voltage: 1.8V
товар відсутній
AS4C64M8D2-25BANTR Alliance_Selection_Guide _Print2024.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60
Operating temperature: -40...105°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: reel
Memory: 512Mb DRAM
Mounting: SMD
Case: FBGA60
Operating voltage: 1.8V
товар відсутній
AS4C64M8D2-25BCN Alliance_Selection_Guide _Print2024.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60
Operating temperature: 0...85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: in-tray
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: FBGA60
Operating voltage: 1.8V
товар відсутній
AS4C64M8D2-25BCNTR Alliance_Selection_Guide _Print2024.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60
Operating temperature: 0...85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: reel
Memory: 512Mb DRAM
Mounting: SMD
Case: FBGA60
Operating voltage: 1.8V
товар відсутній
AS4C64M8D2-25BIN Alliance_Selection_Guide _Print2024.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: in-tray
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: FBGA60
Operating voltage: 1.8V
товар відсутній
AS4C64M8D2-25BINTR Alliance_Selection_Guide _Print2024.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: reel
Memory: 512Mb DRAM
Mounting: SMD
Case: FBGA60
Operating voltage: 1.8V
товар відсутній
AS4C64M8D2-25BAN AS4C64M8D2-25BAN 512Mb x8 DDR2 A-Grade2 _Rev 1.0-1221660.pdf
AS4C64M8D2-25BAN
Виробник: Alliance Memory
DRAM 512M, 1.8V, 400Mhz 64M x 8 DDR2
на замовлення 142 шт:
термін постачання 21-30 дні (днів)
AS4C64M8D2-25BAN Alliance_Selection_Guide _Print2024.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60
Operating temperature: -40...105°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: in-tray
Memory: 512Mb DRAM
Mounting: SMD
Case: FBGA60
Operating voltage: 1.8V
кількість в упаковці: 264 шт
товар відсутній
AS4C64M8D2-25BANTR AS4C64M8D2-25BAN%20512Mb%20x8%20DDR2%20A-Grade2%20_Rev%201.0-1221660.pdf
Виробник: Alliance Memory
DRAM 512M, 1.8V, 400Mhz 64M x 8 DDR2
товар відсутній
AS4C64M8D2-25BANTR Alliance_Selection_Guide _Print2024.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60
Operating temperature: -40...105°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: reel
Memory: 512Mb DRAM
Mounting: SMD
Case: FBGA60
Operating voltage: 1.8V
кількість в упаковці: 2000 шт
товар відсутній
AS4C64M8D2-25BCN 512M-AS4C64M8D2_V1.1-1221681.pdf
AS4C64M8D2-25BCN
Виробник: Alliance Memory
DRAM 512M, 1.8V, 400Mhz 64M x 8 DDR2
на замовлення 164 шт:
термін постачання 21-30 дні (днів)
AS4C64M8D2-25BCN Alliance_Selection_Guide _Print2024.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60
Operating temperature: 0...85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: in-tray
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: FBGA60
Operating voltage: 1.8V
кількість в упаковці: 264 шт
товар відсутній
AS4C64M8D2-25BCNTR 512M-AS4C64M8D2_V1.1-1221681.pdf
AS4C64M8D2-25BCNTR
Виробник: Alliance Memory
DRAM 512M, 1.8V, 400Mhz 64M x 8 DDR2
товар відсутній
AS4C64M8D2-25BCNTR Alliance_Selection_Guide _Print2024.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60
Operating temperature: 0...85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: reel
Memory: 512Mb DRAM
Mounting: SMD
Case: FBGA60
Operating voltage: 1.8V
кількість в упаковці: 2000 шт
товар відсутній
AS4C64M8D2-25BIN 512M-AS4C64M8D2_V1.1-1221681.pdf
AS4C64M8D2-25BIN
Виробник: Alliance Memory
DRAM 512M, 1.8V, 400Mhz 64M x 8 DDR2
на замовлення 1036 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+498.56 грн
10+ 448.6 грн
25+ 380.25 грн
50+ 370.41 грн
AS4C64M8D2-25BIN 3999948.pdf
AS4C64M8D2-25BIN
Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C64M8D2-25BIN - DRAM, DDR2, 512 Mbit, 64M x 8 Bit, 400 MHz, FBGA, 60 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: DDR2
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: FBGA
Speicherdichte: 512Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 1.8V
Taktfrequenz, max.: 400MHz
Betriebstemperatur, min.: -40°C
euEccn: NLR
Anzahl der Pins: 60Pin(s)
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 95°C
Speicherkonfiguration: 64M x 8 Bit
SVHC: No SVHC (14-Jun-2023)
на замовлення 254 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+476.23 грн
10+ 393.44 грн
25+ 376.88 грн
50+ 335.32 грн
100+ 295.34 грн
250+ 293.98 грн
Мінімальне замовлення: 2
AS4C64M8D2-25BIN Alliance_Selection_Guide _Print2024.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: in-tray
Kind of interface: parallel
Memory: 512Mb DRAM
Mounting: SMD
Case: FBGA60
Operating voltage: 1.8V
кількість в упаковці: 264 шт
товар відсутній
AS4C64M8D2-25BINTR 512M-AS4C64M8D2_V1.1-1221681.pdf
AS4C64M8D2-25BINTR
Виробник: Alliance Memory
DRAM 512M, 1.8V, 400Mhz 64M x 8 DDR2
товар відсутній
AS4C64M8D2-25BINTR Alliance_Selection_Guide _Print2024.pdf
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 64Mx8bit
Access time: 12.5ns
Clock frequency: 400MHz
Kind of package: reel
Memory: 512Mb DRAM
Mounting: SMD
Case: FBGA60
Operating voltage: 1.8V
кількість в упаковці: 2000 шт
товар відсутній
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