Продукція > ALLIANCE MEMORY > Всі товари виробника ALLIANCE MEMORY (3714) > Сторінка 6 з 62
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
AS4C16M16D2-25BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 1.8V; 400MHz; 12.5ns; FBGA84 Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Clock frequency: 400MHz Access time: 12.5ns Case: FBGA84 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 1.8V кількість в упаковці: 209 шт |
товар відсутній |
||||||||||||||||
AS4C16M16D2-25BCNTR | Alliance Memory | DRAM DDR2, 256M, 16M X 16, 1.8V, 84-BALL BGA, 400 MHZ, COMMERCIAL TEMP - Tape & Reel |
товар відсутній |
||||||||||||||||
AS4C16M16D2-25BCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 1.8V; 400MHz; 12.5ns; FBGA84 Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Clock frequency: 400MHz Access time: 12.5ns Case: FBGA84 Mounting: SMD Operating temperature: 0...85°C Kind of package: reel Operating voltage: 1.8V кількість в упаковці: 2500 шт |
товар відсутній |
||||||||||||||||
AS4C16M16D2-25BIN | Alliance Memory | DRAM DDR2, 256M, 16M X 16, 1.8V, 84-BALL BGA, 400MHZ, INDUSTRIAL TEMP - Tray |
на замовлення 240 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
AS4C16M16D2-25BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 1.8V; 400MHz; 12.5ns; FBGA84 Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Clock frequency: 400MHz Access time: 12.5ns Case: FBGA84 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 1.8V кількість в упаковці: 209 шт |
товар відсутній |
||||||||||||||||
AS4C16M16D2-25BINTR | Alliance Memory | DRAM DDR2, 256M, 16M X 16, 1.8V, 84-BALL BGA, 400MHZ, INDUSTRIAL TEMP - Tape & Reel |
товар відсутній |
||||||||||||||||
AS4C16M16D2-25BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 1.8V; 400MHz; 12.5ns; FBGA84 Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Clock frequency: 400MHz Access time: 12.5ns Case: FBGA84 Mounting: SMD Operating temperature: -40...95°C Kind of package: reel Operating voltage: 1.8V кількість в упаковці: 2500 шт |
товар відсутній |
||||||||||||||||
AS4C16M16MD1-6BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 16Mx16bit; 1.7÷1.95V; 166MHz; 6.5ns; FPBGA60 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 16Mx16bit Clock frequency: 166MHz Access time: 6.5ns Case: FPBGA60 Memory capacity: 256Mb Mounting: SMD Operating temperature: -30...85°C Kind of interface: parallel Operating voltage: 1.7...1.95V |
товар відсутній |
||||||||||||||||
AS4C16M16MD1-6BCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 1.8V; 166MHz; FBGA60; reel Memory: 256Mb DRAM Clock frequency: 166MHz Kind of memory: SDRAM Operating temperature: -30...85°C Type of integrated circuit: DRAM memory Kind of package: reel Memory organisation: 16Mx16bit Operating voltage: 1.8V Case: FBGA60 Mounting: SMD |
товар відсутній |
||||||||||||||||
AS4C16M16MD1-6BCN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS4C16M16MD1-6BCN - DRAM, LPDDR1, 256 Mbit, 16M x 16 Bit, 166 MHz, FPBGA, 60 Pin(s) tariffCode: 85423231 DRAM-Ausführung: LPDDR1 rohsCompliant: YES IC-Montage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES IC-Gehäuse / Bauform: FPBGA Speicherdichte: 256Mbit usEccn: EAR99 Versorgungsspannung, nom.: 1.8V Taktfrequenz, max.: 166MHz Betriebstemperatur, min.: -30°C euEccn: NLR Anzahl der Pins: 60Pin(s) Produktpalette: - productTraceability: No Betriebstemperatur, max.: 85°C Speicherkonfiguration: 16M x 16 Bit SVHC: No SVHC (14-Jun-2023) |
на замовлення 160 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
AS4C16M16MD1-6BCN | Alliance Memory | DRAM LPDDR1, 256M, 16 x 16, 1.8V, 60ball VFBGA - Tray |
на замовлення 1856 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
AS4C16M16MD1-6BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 16Mx16bit; 1.7÷1.95V; 166MHz; 6.5ns; FPBGA60 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 16Mx16bit Clock frequency: 166MHz Access time: 6.5ns Case: FPBGA60 Memory capacity: 256Mb Mounting: SMD Operating temperature: -30...85°C Kind of interface: parallel Operating voltage: 1.7...1.95V кількість в упаковці: 160 шт |
товар відсутній |
||||||||||||||||
AS4C16M16MD1-6BCNTR | Alliance Memory | DRAM 256M, 1.8V, 166Mhz 16M x 16 Mobile DDR |
товар відсутній |
||||||||||||||||
AS4C16M16MD1-6BCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 1.8V; 166MHz; FBGA60; reel Memory: 256Mb DRAM Clock frequency: 166MHz Kind of memory: SDRAM Operating temperature: -30...85°C Type of integrated circuit: DRAM memory Kind of package: reel Memory organisation: 16Mx16bit Operating voltage: 1.8V Case: FBGA60 Mounting: SMD кількість в упаковці: 1000 шт |
товар відсутній |
||||||||||||||||
AS4C16M16MSA-6BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 16Mx16bit; 1.7V; 166MHz; 5.5ns; FBGA54; -40÷85°C Type of integrated circuit: DRAM memory Case: FBGA54 Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.7V Kind of package: in-tray Clock frequency: 166MHz Kind of memory: DDR1; SDRAM Kind of interface: parallel Memory capacity: 256Mb Memory organisation: 16Mx16bit Access time: 5.5ns |
товар відсутній |
||||||||||||||||
AS4C16M16MSA-6BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 16Mx16bit; 1.7V; 166MHz; 5.5ns; FBGA54; -40÷85°C Type of integrated circuit: DRAM memory Case: FBGA54 Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.7V Kind of package: reel Clock frequency: 166MHz Kind of memory: DDR1; SDRAM Kind of interface: parallel Memory capacity: 256Mb Memory organisation: 16Mx16bit Access time: 5.5ns |
товар відсутній |
||||||||||||||||
AS4C16M16MSA-6BIN | Alliance Memory | DRAM 256M 166MHz 16Mx16 Mobile LP SDRAM IT |
на замовлення 369 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
AS4C16M16MSA-6BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 16Mx16bit; 1.7V; 166MHz; 5.5ns; FBGA54; -40÷85°C Type of integrated circuit: DRAM memory Case: FBGA54 Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.7V Kind of package: in-tray Clock frequency: 166MHz Kind of memory: DDR1; SDRAM Kind of interface: parallel Memory capacity: 256Mb Memory organisation: 16Mx16bit Access time: 5.5ns |
товар відсутній |
||||||||||||||||
AS4C16M16MSA-6BINTR | Alliance Memory | DRAM 256M 166MHz 16Mx16 Mobile LP SDRAM IT |
товар відсутній |
||||||||||||||||
AS4C16M16MSA-6BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 16Mx16bit; 1.7V; 166MHz; 5.5ns; FBGA54; -40÷85°C Type of integrated circuit: DRAM memory Case: FBGA54 Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.7V Kind of package: reel Clock frequency: 166MHz Kind of memory: DDR1; SDRAM Kind of interface: parallel Memory capacity: 256Mb Memory organisation: 16Mx16bit Access time: 5.5ns |
товар відсутній |
||||||||||||||||
AS4C16M16S-6BIN | Alliance Memory | DRAM 256Mb, 3.3V, 166Mhz 16M x 16 SDRAM |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
||||||||||||||||
AS4C16M16S-6TAN | Alliance Memory | DRAM 256Mb, 3.3V, 166Mhz 16M x 16 SDRAM |
на замовлення 109 шт: термін постачання 21-30 дні (днів) |
||||||||||||||||
AS4C16M16S-6TCN | Alliance Memory | DRAM 256M SDRAM 16M X 16 166MHz |
на замовлення 47 шт: термін постачання 21-30 дні (днів) |
||||||||||||||||
AS4C16M16S-6TIN | Alliance Memory | DRAM 256Mb, 3.3V, 166Mhz 16M x 16 SDRAM |
товар відсутній |
||||||||||||||||
AS4C16M16S-6TIN | Alliance Memory | Синхронна динамічна пам'ять SDRAM; Uживл, В = 3,0...3,6; Інтерфейс = Паралельний; Об. пам. = 256 Мбіт; Орг. пам. = 16M x 16; Тдост/Частота = 166 МГц; Тексп, °С = -40...+85; TSOP-54 |
на замовлення 26 шт: термін постачання 3-4 дні (днів) |
|
|||||||||||||||
AS4C16M16S-6TINTR | Alliance Memory | DRAM 256Mb, 3.3V, 166Mhz 16M x 16 SDRAM |
товар відсутній |
||||||||||||||||
AS4C16M16S-7TCN | Alliance Memory | DRAM 256Mb, 3.3V, 143Mhz 16M x 16 SDRAM |
на замовлення 972 шт: термін постачання 21-30 дні (днів) |
||||||||||||||||
AS4C16M16SA-6BAN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Clock frequency: 166MHz Access time: 5.4ns Case: FBGA54 Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Operating voltage: 3.3V |
товар відсутній |
||||||||||||||||
AS4C16M16SA-6BANTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Clock frequency: 166MHz Access time: 5.4ns Case: FBGA54 Mounting: SMD Operating temperature: -40...105°C Kind of package: reel Operating voltage: 3.3V |
товар відсутній |
||||||||||||||||
AS4C16M16SA-6BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3÷3.6V; 166MHz; 6ns; TFBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Clock frequency: 166MHz Access time: 6ns Case: TFBGA54 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Operating voltage: 3...3.6V |
товар відсутній |
||||||||||||||||
AS4C16M16SA-6BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Clock frequency: 166MHz Access time: 5.4ns Case: FBGA54 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel Operating voltage: 3.3V |
товар відсутній |
||||||||||||||||
AS4C16M16SA-6TAN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; in-tray Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Clock frequency: 166MHz Access time: 5.4ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Operating voltage: 3.3V |
товар відсутній |
||||||||||||||||
AS4C16M16SA-6TANTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; reel Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Clock frequency: 166MHz Access time: 5.4ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...105°C Kind of package: reel Operating voltage: 3.3V |
товар відсутній |
||||||||||||||||
AS4C16M16SA-6TCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Access time: 5.4ns Case: TSOP54 II Kind of interface: parallel Mounting: SMD Kind of package: in-tray Operating temperature: 0...70°C Clock frequency: 166MHz Operating voltage: 3.3V |
на замовлення 200 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
AS4C16M16SA-6TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Clock frequency: 166MHz Access time: 5.4ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel Operating voltage: 3.3V |
товар відсутній |
||||||||||||||||
AS4C16M16SA-6TIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; in-tray Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Access time: 5.4ns Case: TSOP54 II Kind of interface: parallel Mounting: SMD Kind of package: in-tray Operating temperature: -40...85°C Clock frequency: 166MHz Operating voltage: 3.3V |
на замовлення 1281 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
AS4C16M16SA-7BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3÷3.6V; 143MHz; 6ns; TFBGA55 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Clock frequency: 143MHz Access time: 6ns Case: TFBGA55 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Operating voltage: 3...3.6V |
товар відсутній |
||||||||||||||||
AS4C16M16SA-7BCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; FBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Clock frequency: 143MHz Access time: 5.4ns Case: FBGA54 Mounting: SMD Operating temperature: 0...70°C Kind of package: reel Operating voltage: 3.3V |
товар відсутній |
||||||||||||||||
AS4C16M16SA-7TCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Access time: 5.4ns Case: TSOP54 II Kind of interface: parallel Mounting: SMD Kind of package: in-tray Operating temperature: 0...70°C Clock frequency: 143MHz Operating voltage: 3.3V |
на замовлення 173 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
AS4C16M16SA-7TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Access time: 5.4ns Case: TSOP54 II Kind of interface: parallel Mounting: SMD Kind of package: reel Operating temperature: 0...70°C Clock frequency: 143MHz Quantity in set/package: 1000pcs. Operating voltage: 3.3V |
на замовлення 2444 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
AS4C16M16SA-6BAN | Alliance Memory | DRAM SDRAM, 256Mb, 16M x 16, 3.3V, 54ball BGA, 166 Mhz, automotive temp - Tray |
на замовлення 2288 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
AS4C16M16SA-6BAN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS4C16M16SA-6BAN - DRAM, SDRAM, 256 Mbit, 16M x 16 Bit, 166 MHz, FBGA, 54 Pin(s) tariffCode: 85423231 DRAM-Ausführung: SDRAM rohsCompliant: YES IC-Montage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES IC-Gehäuse / Bauform: FBGA Speicherdichte: 256Mbit usEccn: EAR99 Versorgungsspannung, nom.: 3.3V Taktfrequenz, max.: 166MHz Betriebstemperatur, min.: -40°C euEccn: NLR Anzahl der Pins: 54Pins Produktpalette: - productTraceability: No Betriebstemperatur, max.: 105°C Speicherkonfiguration: 16M x 16 Bit SVHC: To Be Advised |
на замовлення 679 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
AS4C16M16SA-6BAN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Clock frequency: 166MHz Access time: 5.4ns Case: FBGA54 Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Operating voltage: 3.3V кількість в упаковці: 348 шт |
товар відсутній |
||||||||||||||||
AS4C16M16SA-6BAN | Alliance Memory | Синхронна динамічна енергозалежна пам'ять SDRAM; Uживл, В = 3,0...3,6; Інтерфейс = Паралельний; Об. пам. = 256 Мбіт; Орг. пам. = DRAM; Тдост/Частота = 166 МГц; Тексп, °С = -40...+105; t = 5 нс; TFBGA-54 |
на замовлення 3 шт: термін постачання 3-4 дні (днів) |
|
|||||||||||||||
AS4C16M16SA-6BANTR | Alliance Memory | DRAM SDR, 256Mb, 16M x 16, 3.3V, 54ball BGA, 166 Mhz, automotive temp(.63), T&R, A Die |
товар відсутній |
||||||||||||||||
AS4C16M16SA-6BANTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Clock frequency: 166MHz Access time: 5.4ns Case: FBGA54 Mounting: SMD Operating temperature: -40...105°C Kind of package: reel Operating voltage: 3.3V кількість в упаковці: 2500 шт |
товар відсутній |
||||||||||||||||
AS4C16M16SA-6BIN | Alliance Memory | DRAM SDRAM, 256Mb, 16M x 16, 3.3V, 54-ball FBGA, 166 MHz, Industrial Temp - Tray |
на замовлення 2411 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
AS4C16M16SA-6BIN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS4C16M16SA-6BIN - DRAM, SDRAM, 256 Mbit, 16M x 16 Bit, 166 MHz, TFBGA, 54 Pin(s) tariffCode: 85423231 DRAM-Ausführung: SDRAM rohsCompliant: YES IC-Montage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES IC-Gehäuse / Bauform: TFBGA Speicherdichte: 256Mbit usEccn: EAR99 Versorgungsspannung, nom.: 3.3V Taktfrequenz, max.: 166MHz Betriebstemperatur, min.: -40°C euEccn: NLR Anzahl der Pins: 54Pins Produktpalette: - productTraceability: No Betriebstemperatur, max.: 85°C Speicherkonfiguration: 16M x 16 Bit SVHC: To Be Advised |
на замовлення 482 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
AS4C16M16SA-6BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3÷3.6V; 166MHz; 6ns; TFBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Clock frequency: 166MHz Access time: 6ns Case: TFBGA54 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Operating voltage: 3...3.6V кількість в упаковці: 348 шт |
товар відсутній |
||||||||||||||||
AS4C16M16SA-6BINTR | Alliance Memory | DRAM 256Mb, 3.3V, 166Mhz 16M x 16 SDRAM |
на замовлення 2466 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
AS4C16M16SA-6BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Clock frequency: 166MHz Access time: 5.4ns Case: FBGA54 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel Operating voltage: 3.3V кількість в упаковці: 2500 шт |
товар відсутній |
||||||||||||||||
AS4C16M16SA-6TAN | Alliance Memory | DRAM SDRAM, 256Mb, 16M x 16, 3.3V, 54pin TSOP II, 166 Mhz, automotive temp - Tray |
на замовлення 189 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
AS4C16M16SA-6TAN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; in-tray Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Clock frequency: 166MHz Access time: 5.4ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Operating voltage: 3.3V кількість в упаковці: 1 шт |
товар відсутній |
||||||||||||||||
AS4C16M16SA-6TANTR | Alliance Memory | DRAM SDR, 256Mb, 16M x 16, 3.3V, 54pin TSOP II, 166 Mhz, automotive temp(.63), T&R, A Die |
товар відсутній |
||||||||||||||||
AS4C16M16SA-6TANTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; reel Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Clock frequency: 166MHz Access time: 5.4ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...105°C Kind of package: reel Operating voltage: 3.3V кількість в упаковці: 1000 шт |
товар відсутній |
||||||||||||||||
AS4C16M16SA-6TCN | Alliance Memory | DRAM SDRAM, 256Mb, 16M x 16, 3.3V, 54pin TSOP II, 166 Mhz, Commercial Temp - Tray |
на замовлення 441 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
AS4C16M16SA-6TCN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS4C16M16SA-6TCN - DRAM, SDRAM, 256 Mbit, 16M x 16 Bit, 166 MHz, TSOP-II, 54 Pin(s) tariffCode: 85423231 DRAM-Ausführung: SDRAM rohsCompliant: YES IC-Montage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES IC-Gehäuse / Bauform: TSOP-II Speicherdichte: 256Mbit usEccn: EAR99 Versorgungsspannung, nom.: 3.3V Taktfrequenz, max.: 166MHz Betriebstemperatur, min.: - euEccn: NLR Anzahl der Pins: 54Pins Produktpalette: - productTraceability: No Betriebstemperatur, max.: 70°C Speicherkonfiguration: 16M x 16 Bit SVHC: To Be Advised |
на замовлення 61 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
AS4C16M16SA-6TCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Access time: 5.4ns Case: TSOP54 II Kind of interface: parallel Mounting: SMD Kind of package: in-tray Operating temperature: 0...70°C Clock frequency: 166MHz Operating voltage: 3.3V кількість в упаковці: 1 шт |
на замовлення 200 шт: термін постачання 14-21 дні (днів) |
|
|||||||||||||||
AS4C16M16SA-6TCNTR | Alliance Memory | DRAM SDR, 256Mb, 16M x 16, 3.3V, 54pin TSOP II, 166 Mhz, Commercial Temp Tape and Reel, A Die |
на замовлення 889 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
AS4C16M16SA-6TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 16Mx16bit Clock frequency: 166MHz Access time: 5.4ns Case: TSOP54 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel Operating voltage: 3.3V кількість в упаковці: 1000 шт |
товар відсутній |
AS4C16M16D2-25BCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 1.8V; 400MHz; 12.5ns; FBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 400MHz
Access time: 12.5ns
Case: FBGA84
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 1.8V
кількість в упаковці: 209 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 1.8V; 400MHz; 12.5ns; FBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 400MHz
Access time: 12.5ns
Case: FBGA84
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 1.8V
кількість в упаковці: 209 шт
товар відсутній
AS4C16M16D2-25BCNTR |
Виробник: Alliance Memory
DRAM DDR2, 256M, 16M X 16, 1.8V, 84-BALL BGA, 400 MHZ, COMMERCIAL TEMP - Tape & Reel
DRAM DDR2, 256M, 16M X 16, 1.8V, 84-BALL BGA, 400 MHZ, COMMERCIAL TEMP - Tape & Reel
товар відсутній
AS4C16M16D2-25BCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 1.8V; 400MHz; 12.5ns; FBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 400MHz
Access time: 12.5ns
Case: FBGA84
Mounting: SMD
Operating temperature: 0...85°C
Kind of package: reel
Operating voltage: 1.8V
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 1.8V; 400MHz; 12.5ns; FBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 400MHz
Access time: 12.5ns
Case: FBGA84
Mounting: SMD
Operating temperature: 0...85°C
Kind of package: reel
Operating voltage: 1.8V
кількість в упаковці: 2500 шт
товар відсутній
AS4C16M16D2-25BIN |
Виробник: Alliance Memory
DRAM DDR2, 256M, 16M X 16, 1.8V, 84-BALL BGA, 400MHZ, INDUSTRIAL TEMP - Tray
DRAM DDR2, 256M, 16M X 16, 1.8V, 84-BALL BGA, 400MHZ, INDUSTRIAL TEMP - Tray
на замовлення 240 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 344.92 грн |
10+ | 300.29 грн |
100+ | 238.82 грн |
209+ | 233.06 грн |
418+ | 224.43 грн |
1045+ | 212.92 грн |
2508+ | 212.2 грн |
AS4C16M16D2-25BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 1.8V; 400MHz; 12.5ns; FBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 400MHz
Access time: 12.5ns
Case: FBGA84
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 1.8V
кількість в упаковці: 209 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 1.8V; 400MHz; 12.5ns; FBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 400MHz
Access time: 12.5ns
Case: FBGA84
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 1.8V
кількість в упаковці: 209 шт
товар відсутній
AS4C16M16D2-25BINTR |
Виробник: Alliance Memory
DRAM DDR2, 256M, 16M X 16, 1.8V, 84-BALL BGA, 400MHZ, INDUSTRIAL TEMP - Tape & Reel
DRAM DDR2, 256M, 16M X 16, 1.8V, 84-BALL BGA, 400MHZ, INDUSTRIAL TEMP - Tape & Reel
товар відсутній
AS4C16M16D2-25BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 1.8V; 400MHz; 12.5ns; FBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 400MHz
Access time: 12.5ns
Case: FBGA84
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 1.8V
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 1.8V; 400MHz; 12.5ns; FBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 400MHz
Access time: 12.5ns
Case: FBGA84
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 1.8V
кількість в упаковці: 2500 шт
товар відсутній
AS4C16M16MD1-6BCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx16bit; 1.7÷1.95V; 166MHz; 6.5ns; FPBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 6.5ns
Case: FPBGA60
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -30...85°C
Kind of interface: parallel
Operating voltage: 1.7...1.95V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx16bit; 1.7÷1.95V; 166MHz; 6.5ns; FPBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 6.5ns
Case: FPBGA60
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -30...85°C
Kind of interface: parallel
Operating voltage: 1.7...1.95V
товар відсутній
AS4C16M16MD1-6BCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 1.8V; 166MHz; FBGA60; reel
Memory: 256Mb DRAM
Clock frequency: 166MHz
Kind of memory: SDRAM
Operating temperature: -30...85°C
Type of integrated circuit: DRAM memory
Kind of package: reel
Memory organisation: 16Mx16bit
Operating voltage: 1.8V
Case: FBGA60
Mounting: SMD
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 1.8V; 166MHz; FBGA60; reel
Memory: 256Mb DRAM
Clock frequency: 166MHz
Kind of memory: SDRAM
Operating temperature: -30...85°C
Type of integrated circuit: DRAM memory
Kind of package: reel
Memory organisation: 16Mx16bit
Operating voltage: 1.8V
Case: FBGA60
Mounting: SMD
товар відсутній
AS4C16M16MD1-6BCN |
Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C16M16MD1-6BCN - DRAM, LPDDR1, 256 Mbit, 16M x 16 Bit, 166 MHz, FPBGA, 60 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: LPDDR1
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: FPBGA
Speicherdichte: 256Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 1.8V
Taktfrequenz, max.: 166MHz
Betriebstemperatur, min.: -30°C
euEccn: NLR
Anzahl der Pins: 60Pin(s)
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 85°C
Speicherkonfiguration: 16M x 16 Bit
SVHC: No SVHC (14-Jun-2023)
Description: ALLIANCE MEMORY - AS4C16M16MD1-6BCN - DRAM, LPDDR1, 256 Mbit, 16M x 16 Bit, 166 MHz, FPBGA, 60 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: LPDDR1
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: FPBGA
Speicherdichte: 256Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 1.8V
Taktfrequenz, max.: 166MHz
Betriebstemperatur, min.: -30°C
euEccn: NLR
Anzahl der Pins: 60Pin(s)
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 85°C
Speicherkonfiguration: 16M x 16 Bit
SVHC: No SVHC (14-Jun-2023)
на замовлення 160 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 361.51 грн |
10+ | 286.47 грн |
25+ | 276.78 грн |
50+ | 247.27 грн |
100+ | 219.95 грн |
AS4C16M16MD1-6BCN |
Виробник: Alliance Memory
DRAM LPDDR1, 256M, 16 x 16, 1.8V, 60ball VFBGA - Tray
DRAM LPDDR1, 256M, 16 x 16, 1.8V, 60ball VFBGA - Tray
на замовлення 1856 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 208.13 грн |
AS4C16M16MD1-6BCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx16bit; 1.7÷1.95V; 166MHz; 6.5ns; FPBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 6.5ns
Case: FPBGA60
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -30...85°C
Kind of interface: parallel
Operating voltage: 1.7...1.95V
кількість в упаковці: 160 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx16bit; 1.7÷1.95V; 166MHz; 6.5ns; FPBGA60
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 6.5ns
Case: FPBGA60
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -30...85°C
Kind of interface: parallel
Operating voltage: 1.7...1.95V
кількість в упаковці: 160 шт
товар відсутній
AS4C16M16MD1-6BCNTR |
Виробник: Alliance Memory
DRAM 256M, 1.8V, 166Mhz 16M x 16 Mobile DDR
DRAM 256M, 1.8V, 166Mhz 16M x 16 Mobile DDR
товар відсутній
AS4C16M16MD1-6BCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 1.8V; 166MHz; FBGA60; reel
Memory: 256Mb DRAM
Clock frequency: 166MHz
Kind of memory: SDRAM
Operating temperature: -30...85°C
Type of integrated circuit: DRAM memory
Kind of package: reel
Memory organisation: 16Mx16bit
Operating voltage: 1.8V
Case: FBGA60
Mounting: SMD
кількість в упаковці: 1000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 1.8V; 166MHz; FBGA60; reel
Memory: 256Mb DRAM
Clock frequency: 166MHz
Kind of memory: SDRAM
Operating temperature: -30...85°C
Type of integrated circuit: DRAM memory
Kind of package: reel
Memory organisation: 16Mx16bit
Operating voltage: 1.8V
Case: FBGA60
Mounting: SMD
кількість в упаковці: 1000 шт
товар відсутній
AS4C16M16MSA-6BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx16bit; 1.7V; 166MHz; 5.5ns; FBGA54; -40÷85°C
Type of integrated circuit: DRAM memory
Case: FBGA54
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.7V
Kind of package: in-tray
Clock frequency: 166MHz
Kind of memory: DDR1; SDRAM
Kind of interface: parallel
Memory capacity: 256Mb
Memory organisation: 16Mx16bit
Access time: 5.5ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx16bit; 1.7V; 166MHz; 5.5ns; FBGA54; -40÷85°C
Type of integrated circuit: DRAM memory
Case: FBGA54
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.7V
Kind of package: in-tray
Clock frequency: 166MHz
Kind of memory: DDR1; SDRAM
Kind of interface: parallel
Memory capacity: 256Mb
Memory organisation: 16Mx16bit
Access time: 5.5ns
товар відсутній
AS4C16M16MSA-6BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx16bit; 1.7V; 166MHz; 5.5ns; FBGA54; -40÷85°C
Type of integrated circuit: DRAM memory
Case: FBGA54
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.7V
Kind of package: reel
Clock frequency: 166MHz
Kind of memory: DDR1; SDRAM
Kind of interface: parallel
Memory capacity: 256Mb
Memory organisation: 16Mx16bit
Access time: 5.5ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx16bit; 1.7V; 166MHz; 5.5ns; FBGA54; -40÷85°C
Type of integrated circuit: DRAM memory
Case: FBGA54
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.7V
Kind of package: reel
Clock frequency: 166MHz
Kind of memory: DDR1; SDRAM
Kind of interface: parallel
Memory capacity: 256Mb
Memory organisation: 16Mx16bit
Access time: 5.5ns
товар відсутній
AS4C16M16MSA-6BIN |
Виробник: Alliance Memory
DRAM 256M 166MHz 16Mx16 Mobile LP SDRAM IT
DRAM 256M 166MHz 16Mx16 Mobile LP SDRAM IT
на замовлення 369 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 562.28 грн |
10+ | 510.4 грн |
25+ | 434.48 грн |
100+ | 388.44 грн |
250+ | 376.93 грн |
500+ | 358.23 грн |
957+ | 346 грн |
AS4C16M16MSA-6BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx16bit; 1.7V; 166MHz; 5.5ns; FBGA54; -40÷85°C
Type of integrated circuit: DRAM memory
Case: FBGA54
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.7V
Kind of package: in-tray
Clock frequency: 166MHz
Kind of memory: DDR1; SDRAM
Kind of interface: parallel
Memory capacity: 256Mb
Memory organisation: 16Mx16bit
Access time: 5.5ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx16bit; 1.7V; 166MHz; 5.5ns; FBGA54; -40÷85°C
Type of integrated circuit: DRAM memory
Case: FBGA54
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.7V
Kind of package: in-tray
Clock frequency: 166MHz
Kind of memory: DDR1; SDRAM
Kind of interface: parallel
Memory capacity: 256Mb
Memory organisation: 16Mx16bit
Access time: 5.5ns
товар відсутній
AS4C16M16MSA-6BINTR |
Виробник: Alliance Memory
DRAM 256M 166MHz 16Mx16 Mobile LP SDRAM IT
DRAM 256M 166MHz 16Mx16 Mobile LP SDRAM IT
товар відсутній
AS4C16M16MSA-6BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx16bit; 1.7V; 166MHz; 5.5ns; FBGA54; -40÷85°C
Type of integrated circuit: DRAM memory
Case: FBGA54
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.7V
Kind of package: reel
Clock frequency: 166MHz
Kind of memory: DDR1; SDRAM
Kind of interface: parallel
Memory capacity: 256Mb
Memory organisation: 16Mx16bit
Access time: 5.5ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16Mx16bit; 1.7V; 166MHz; 5.5ns; FBGA54; -40÷85°C
Type of integrated circuit: DRAM memory
Case: FBGA54
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.7V
Kind of package: reel
Clock frequency: 166MHz
Kind of memory: DDR1; SDRAM
Kind of interface: parallel
Memory capacity: 256Mb
Memory organisation: 16Mx16bit
Access time: 5.5ns
товар відсутній
AS4C16M16S-6BIN |
Виробник: Alliance Memory
DRAM 256Mb, 3.3V, 166Mhz 16M x 16 SDRAM
DRAM 256Mb, 3.3V, 166Mhz 16M x 16 SDRAM
на замовлення 1 шт:
термін постачання 21-30 дні (днів)AS4C16M16S-6TAN |
Виробник: Alliance Memory
DRAM 256Mb, 3.3V, 166Mhz 16M x 16 SDRAM
DRAM 256Mb, 3.3V, 166Mhz 16M x 16 SDRAM
на замовлення 109 шт:
термін постачання 21-30 дні (днів)AS4C16M16S-6TCN |
Виробник: Alliance Memory
DRAM 256M SDRAM 16M X 16 166MHz
DRAM 256M SDRAM 16M X 16 166MHz
на замовлення 47 шт:
термін постачання 21-30 дні (днів)AS4C16M16S-6TIN |
Виробник: Alliance Memory
Синхронна динамічна пам'ять SDRAM; Uживл, В = 3,0...3,6; Інтерфейс = Паралельний; Об. пам. = 256 Мбіт; Орг. пам. = 16M x 16; Тдост/Частота = 166 МГц; Тексп, °С = -40...+85; TSOP-54
Синхронна динамічна пам'ять SDRAM; Uживл, В = 3,0...3,6; Інтерфейс = Паралельний; Об. пам. = 256 Мбіт; Орг. пам. = 16M x 16; Тдост/Частота = 166 МГц; Тексп, °С = -40...+85; TSOP-54
на замовлення 26 шт:
термін постачання 3-4 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 172.15 грн |
10+ | 160.68 грн |
100+ | 149.2 грн |
AS4C16M16S-7TCN |
Виробник: Alliance Memory
DRAM 256Mb, 3.3V, 143Mhz 16M x 16 SDRAM
DRAM 256Mb, 3.3V, 143Mhz 16M x 16 SDRAM
на замовлення 972 шт:
термін постачання 21-30 дні (днів)AS4C16M16SA-6BAN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 3.3V
товар відсутній
AS4C16M16SA-6BANTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C16M16SA-6BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3÷3.6V; 166MHz; 6ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 3...3.6V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3÷3.6V; 166MHz; 6ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 3...3.6V
товар відсутній
AS4C16M16SA-6BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C16M16SA-6TAN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 3.3V
товар відсутній
AS4C16M16SA-6TANTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C16M16SA-6TCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Access time: 5.4ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Kind of package: in-tray
Operating temperature: 0...70°C
Clock frequency: 166MHz
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Access time: 5.4ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Kind of package: in-tray
Operating temperature: 0...70°C
Clock frequency: 166MHz
Operating voltage: 3.3V
на замовлення 200 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 345.37 грн |
4+ | 249.52 грн |
10+ | 236.03 грн |
108+ | 227.04 грн |
AS4C16M16SA-6TCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C16M16SA-6TIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Access time: 5.4ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Kind of package: in-tray
Operating temperature: -40...85°C
Clock frequency: 166MHz
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Access time: 5.4ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Kind of package: in-tray
Operating temperature: -40...85°C
Clock frequency: 166MHz
Operating voltage: 3.3V
на замовлення 1281 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 361.51 грн |
4+ | 237.53 грн |
5+ | 236.78 грн |
11+ | 224.04 грн |
108+ | 215.8 грн |
AS4C16M16SA-7BCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3÷3.6V; 143MHz; 6ns; TFBGA55
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 143MHz
Access time: 6ns
Case: TFBGA55
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Operating voltage: 3...3.6V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3÷3.6V; 143MHz; 6ns; TFBGA55
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 143MHz
Access time: 6ns
Case: TFBGA55
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Operating voltage: 3...3.6V
товар відсутній
AS4C16M16SA-7BCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; FBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: FBGA54
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; FBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: FBGA54
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C16M16SA-7TCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Access time: 5.4ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Kind of package: in-tray
Operating temperature: 0...70°C
Clock frequency: 143MHz
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Access time: 5.4ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Kind of package: in-tray
Operating temperature: 0...70°C
Clock frequency: 143MHz
Operating voltage: 3.3V
на замовлення 173 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 321.16 грн |
5+ | 213.55 грн |
12+ | 202.31 грн |
108+ | 195.57 грн |
AS4C16M16SA-7TCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Access time: 5.4ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Kind of package: reel
Operating temperature: 0...70°C
Clock frequency: 143MHz
Quantity in set/package: 1000pcs.
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Access time: 5.4ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Kind of package: reel
Operating temperature: 0...70°C
Clock frequency: 143MHz
Quantity in set/package: 1000pcs.
Operating voltage: 3.3V
на замовлення 2444 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 317.13 грн |
4+ | 233.03 грн |
11+ | 220.3 грн |
250+ | 218.05 грн |
1000+ | 212.05 грн |
AS4C16M16SA-6BAN |
Виробник: Alliance Memory
DRAM SDRAM, 256Mb, 16M x 16, 3.3V, 54ball BGA, 166 Mhz, automotive temp - Tray
DRAM SDRAM, 256Mb, 16M x 16, 3.3V, 54ball BGA, 166 Mhz, automotive temp - Tray
на замовлення 2288 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 485.07 грн |
10+ | 387.97 грн |
250+ | 336.65 грн |
348+ | 312.91 грн |
1044+ | 302.84 грн |
AS4C16M16SA-6BAN |
Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C16M16SA-6BAN - DRAM, SDRAM, 256 Mbit, 16M x 16 Bit, 166 MHz, FBGA, 54 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: SDRAM
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: FBGA
Speicherdichte: 256Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Betriebstemperatur, min.: -40°C
euEccn: NLR
Anzahl der Pins: 54Pins
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 105°C
Speicherkonfiguration: 16M x 16 Bit
SVHC: To Be Advised
Description: ALLIANCE MEMORY - AS4C16M16SA-6BAN - DRAM, SDRAM, 256 Mbit, 16M x 16 Bit, 166 MHz, FBGA, 54 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: SDRAM
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: FBGA
Speicherdichte: 256Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Betriebstemperatur, min.: -40°C
euEccn: NLR
Anzahl der Pins: 54Pins
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 105°C
Speicherkonfiguration: 16M x 16 Bit
SVHC: To Be Advised
на замовлення 679 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 514.02 грн |
10+ | 379.26 грн |
25+ | 372.81 грн |
50+ | 340.18 грн |
100+ | 307.79 грн |
250+ | 302.26 грн |
500+ | 296.03 грн |
AS4C16M16SA-6BAN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 3.3V
кількість в упаковці: 348 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 3.3V
кількість в упаковці: 348 шт
товар відсутній
AS4C16M16SA-6BAN |
Виробник: Alliance Memory
Синхронна динамічна енергозалежна пам'ять SDRAM; Uживл, В = 3,0...3,6; Інтерфейс = Паралельний; Об. пам. = 256 Мбіт; Орг. пам. = DRAM; Тдост/Частота = 166 МГц; Тексп, °С = -40...+105; t = 5 нс; TFBGA-54
Синхронна динамічна енергозалежна пам'ять SDRAM; Uживл, В = 3,0...3,6; Інтерфейс = Паралельний; Об. пам. = 256 Мбіт; Орг. пам. = DRAM; Тдост/Частота = 166 МГц; Тексп, °С = -40...+105; t = 5 нс; TFBGA-54
на замовлення 3 шт:
термін постачання 3-4 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 454.32 грн |
10+ | 424.04 грн |
100+ | 393.74 грн |
AS4C16M16SA-6BANTR |
Виробник: Alliance Memory
DRAM SDR, 256Mb, 16M x 16, 3.3V, 54ball BGA, 166 Mhz, automotive temp(.63), T&R, A Die
DRAM SDR, 256Mb, 16M x 16, 3.3V, 54ball BGA, 166 Mhz, automotive temp(.63), T&R, A Die
товар відсутній
AS4C16M16SA-6BANTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Operating voltage: 3.3V
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Operating voltage: 3.3V
кількість в упаковці: 2500 шт
товар відсутній
AS4C16M16SA-6BIN |
Виробник: Alliance Memory
DRAM SDRAM, 256Mb, 16M x 16, 3.3V, 54-ball FBGA, 166 MHz, Industrial Temp - Tray
DRAM SDRAM, 256Mb, 16M x 16, 3.3V, 54-ball FBGA, 166 MHz, Industrial Temp - Tray
на замовлення 2411 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 423.81 грн |
10+ | 354.88 грн |
100+ | 307.87 грн |
348+ | 287.01 грн |
1044+ | 274.79 грн |
2784+ | 272.63 грн |
5220+ | 265.43 грн |
AS4C16M16SA-6BIN |
Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C16M16SA-6BIN - DRAM, SDRAM, 256 Mbit, 16M x 16 Bit, 166 MHz, TFBGA, 54 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: SDRAM
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: TFBGA
Speicherdichte: 256Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Betriebstemperatur, min.: -40°C
euEccn: NLR
Anzahl der Pins: 54Pins
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 85°C
Speicherkonfiguration: 16M x 16 Bit
SVHC: To Be Advised
Description: ALLIANCE MEMORY - AS4C16M16SA-6BIN - DRAM, SDRAM, 256 Mbit, 16M x 16 Bit, 166 MHz, TFBGA, 54 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: SDRAM
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: TFBGA
Speicherdichte: 256Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Betriebstemperatur, min.: -40°C
euEccn: NLR
Anzahl der Pins: 54Pins
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 85°C
Speicherkonfiguration: 16M x 16 Bit
SVHC: To Be Advised
на замовлення 482 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 452.7 грн |
10+ | 346.99 грн |
25+ | 341.34 грн |
50+ | 311.71 грн |
100+ | 282.2 грн |
250+ | 277.36 грн |
AS4C16M16SA-6BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3÷3.6V; 166MHz; 6ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 3...3.6V
кількість в упаковці: 348 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3÷3.6V; 166MHz; 6ns; TFBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 3...3.6V
кількість в упаковці: 348 шт
товар відсутній
AS4C16M16SA-6BINTR |
Виробник: Alliance Memory
DRAM 256Mb, 3.3V, 166Mhz 16M x 16 SDRAM
DRAM 256Mb, 3.3V, 166Mhz 16M x 16 SDRAM
на замовлення 2466 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 459.05 грн |
10+ | 411.96 грн |
100+ | 313.63 грн |
250+ | 312.19 грн |
500+ | 292.77 грн |
1000+ | 280.54 грн |
2500+ | 271.19 грн |
AS4C16M16SA-6BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 3.3V
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; FBGA54
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA54
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 3.3V
кількість в упаковці: 2500 шт
товар відсутній
AS4C16M16SA-6TAN |
Виробник: Alliance Memory
DRAM SDRAM, 256Mb, 16M x 16, 3.3V, 54pin TSOP II, 166 Mhz, automotive temp - Tray
DRAM SDRAM, 256Mb, 16M x 16, 3.3V, 54pin TSOP II, 166 Mhz, automotive temp - Tray
на замовлення 189 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 490.11 грн |
10+ | 429.33 грн |
108+ | 335.21 грн |
216+ | 333.05 грн |
540+ | 312.19 грн |
1080+ | 299.24 грн |
5076+ | 294.21 грн |
AS4C16M16SA-6TAN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 3.3V
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 3.3V
кількість в упаковці: 1 шт
товар відсутній
AS4C16M16SA-6TANTR |
Виробник: Alliance Memory
DRAM SDR, 256Mb, 16M x 16, 3.3V, 54pin TSOP II, 166 Mhz, automotive temp(.63), T&R, A Die
DRAM SDR, 256Mb, 16M x 16, 3.3V, 54pin TSOP II, 166 Mhz, automotive temp(.63), T&R, A Die
товар відсутній
AS4C16M16SA-6TANTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Operating voltage: 3.3V
кількість в упаковці: 1000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Operating voltage: 3.3V
кількість в упаковці: 1000 шт
товар відсутній
AS4C16M16SA-6TCN |
Виробник: Alliance Memory
DRAM SDRAM, 256Mb, 16M x 16, 3.3V, 54pin TSOP II, 166 Mhz, Commercial Temp - Tray
DRAM SDRAM, 256Mb, 16M x 16, 3.3V, 54pin TSOP II, 166 Mhz, Commercial Temp - Tray
на замовлення 441 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 337.37 грн |
10+ | 294.5 грн |
108+ | 225.15 грн |
540+ | 207.17 грн |
2592+ | 205.73 грн |
5076+ | 205.01 грн |
AS4C16M16SA-6TCN |
Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C16M16SA-6TCN - DRAM, SDRAM, 256 Mbit, 16M x 16 Bit, 166 MHz, TSOP-II, 54 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: SDRAM
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: TSOP-II
Speicherdichte: 256Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Betriebstemperatur, min.: -
euEccn: NLR
Anzahl der Pins: 54Pins
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 70°C
Speicherkonfiguration: 16M x 16 Bit
SVHC: To Be Advised
Description: ALLIANCE MEMORY - AS4C16M16SA-6TCN - DRAM, SDRAM, 256 Mbit, 16M x 16 Bit, 166 MHz, TSOP-II, 54 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: SDRAM
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: TSOP-II
Speicherdichte: 256Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Betriebstemperatur, min.: -
euEccn: NLR
Anzahl der Pins: 54Pins
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 70°C
Speicherkonfiguration: 16M x 16 Bit
SVHC: To Be Advised
на замовлення 61 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 365.55 грн |
10+ | 294.53 грн |
25+ | 281.62 грн |
50+ | 248.77 грн |
AS4C16M16SA-6TCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Access time: 5.4ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Kind of package: in-tray
Operating temperature: 0...70°C
Clock frequency: 166MHz
Operating voltage: 3.3V
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Access time: 5.4ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Kind of package: in-tray
Operating temperature: 0...70°C
Clock frequency: 166MHz
Operating voltage: 3.3V
кількість в упаковці: 1 шт
на замовлення 200 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 414.45 грн |
4+ | 310.94 грн |
10+ | 283.24 грн |
108+ | 272.45 грн |
AS4C16M16SA-6TCNTR |
Виробник: Alliance Memory
DRAM SDR, 256Mb, 16M x 16, 3.3V, 54pin TSOP II, 166 Mhz, Commercial Temp Tape and Reel, A Die
DRAM SDR, 256Mb, 16M x 16, 3.3V, 54pin TSOP II, 166 Mhz, Commercial Temp Tape and Reel, A Die
на замовлення 889 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 335.69 грн |
10+ | 300.29 грн |
100+ | 228.03 грн |
250+ | 226.59 грн |
500+ | 218.68 грн |
1000+ | 212.92 грн |
2000+ | 212.2 грн |
AS4C16M16SA-6TCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
кількість в упаковці: 1000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 16Mx16bit
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
кількість в упаковці: 1000 шт
товар відсутній