Продукція > ALLIANCE MEMORY > Всі товари виробника ALLIANCE MEMORY (3714) > Сторінка 16 з 62
Фото | Назва | Виробник | Інформація |
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AS4C32M32MD1-5BINTR | Alliance Memory | DRAM 1G, 1.8V, 200Mhz 32M x 32 Mobile DDR |
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AS4C32M32MD1A-5BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32Mx32bit; 1.7÷1.95V; 200MHz; 6ns; FBGA90 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 32Mx32bit Clock frequency: 200MHz Access time: 6ns Case: FBGA90 Memory capacity: 1024Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Operating voltage: 1.7...1.95V |
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AS4C32M32MD1A-5BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32Mx16bit; 1.8V; 200MHz; 15ns; FPBGA60; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 32Mx16bit Clock frequency: 200MHz Access time: 15ns Case: FPBGA60 Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: reel Operating voltage: 1.8V |
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AS4C32M32MD1A-5BIN | Alliance Memory | DRAM 1G 1.8V 32M x 32 Mobile DDR I-Temp |
на замовлення 290 шт: термін постачання 21-30 дні (днів) |
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AS4C32M32MD1A-5BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32Mx32bit; 1.7÷1.95V; 200MHz; 6ns; FBGA90 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 32Mx32bit Clock frequency: 200MHz Access time: 6ns Case: FBGA90 Memory capacity: 1024Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Operating voltage: 1.7...1.95V |
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AS4C32M32MD1A-5BINTR | Alliance Memory | DRAM 1G 1.8V 32M x 32 Mobile DDR I-Temp |
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AS4C32M32MD1A-5BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32Mx16bit; 1.8V; 200MHz; 15ns; FPBGA60; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 32Mx16bit Clock frequency: 200MHz Access time: 15ns Case: FPBGA60 Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: reel Operating voltage: 1.8V |
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AS4C32M32MD2-25BCN | Alliance Memory | DRAM 1G 1.2V/1.8V 400MHz 32Mx32 Mobile DDR2 |
на замовлення 242 шт: термін постачання 21-30 дні (днів) |
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AS4C32M32MD2-25BCNTR | Alliance Memory | DRAM 1G 1.2V/1.8V 400MHz 32Mx32 Mobile DDR2 |
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AS4C32M32MD2A-25BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32Mx32bit; 1.8V; 400MHz; 18ns; FBGA134; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 32Mx32bit Clock frequency: 400MHz Access time: 18ns Case: FBGA134 Memory capacity: 1Gb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 1.8V |
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AS4C32M32MD2A-25BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 32Mx32bit; 1.2÷1.8V; 400MHz; 18ns; reel Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory: 1Gb DRAM Memory organisation: 32Mx32bit Clock frequency: 400MHz Access time: 18ns Case: FBGA134 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel Operating voltage: 1.2...1.8V |
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AS4C32M32MD2A-25BIN | Alliance Memory | DRAM LPDDR2, 1G, 32M X 32, 1.2V, 134ball BGA, (A-DIE), INDUSTRIAL TEMP - Tray |
на замовлення 67 шт: термін постачання 21-30 дні (днів) |
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AS4C32M32MD2A-25BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32Mx32bit; 1.8V; 400MHz; 18ns; FBGA134; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 32Mx32bit Clock frequency: 400MHz Access time: 18ns Case: FBGA134 Memory capacity: 1Gb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 1.8V |
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AS4C32M32MD2A-25BINTR | Alliance Memory | DRAM LPDDR2, 1G, 32M X 32, 1.2V, 134ball BGA, (A-DIE), INDUSTRIAL TEMP - Tape & Reel |
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AS4C32M32MD2A-25BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 32Mx32bit; 1.2÷1.8V; 400MHz; 18ns; reel Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory: 1Gb DRAM Memory organisation: 32Mx32bit Clock frequency: 400MHz Access time: 18ns Case: FBGA134 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel Operating voltage: 1.2...1.8V кількість в упаковці: 1000 шт |
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AS4C32M8D1-5TCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32Mx8bit; 2.5V; 200MHz; 15ns; TSOP66 II; 0÷70°C Operating temperature: 0...70°C Clock frequency: 200MHz Memory capacity: 256Mb Kind of interface: parallel Memory organisation: 32Mx8bit Kind of package: in-tray Case: TSOP66 II Operating voltage: 2.5V Kind of memory: DDR1; SDRAM Mounting: SMD Access time: 15ns Type of integrated circuit: DRAM memory |
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AS4C32M8D1-5TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32Mx8bit; 2.5V; 200MHz; 15ns; TSOP66 II; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 32Mx8bit Clock frequency: 200MHz Access time: 15ns Case: TSOP66 II Memory capacity: 256Mb Mounting: SMD Operating temperature: 0...70°C Kind of package: reel Operating voltage: 2.5V |
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AS4C32M8D1-5TIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32Mx8bit; 2.5V; 200MHz; 15ns; TSOP66 II; -40÷85°C Operating temperature: -40...85°C Clock frequency: 200MHz Memory capacity: 256Mb Kind of interface: parallel Memory organisation: 32Mx8bit Kind of package: in-tray Case: TSOP66 II Operating voltage: 2.5V Kind of memory: DDR1; SDRAM Mounting: SMD Access time: 15ns Type of integrated circuit: DRAM memory |
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AS4C32M8D1-5TINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32Mx8bit; 2.5V; 200MHz; 15ns; TSOP66 II; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 32Mx8bit Clock frequency: 200MHz Access time: 15ns Case: TSOP66 II Memory capacity: 256Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: reel Operating voltage: 2.5V |
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AS4C32M8D1-5TCN | Alliance Memory | DRAM |
на замовлення 108 шт: термін постачання 21-30 дні (днів) |
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AS4C32M8D1-5TCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32Mx8bit; 2.5V; 200MHz; 15ns; TSOP66 II; 0÷70°C Operating temperature: 0...70°C Clock frequency: 200MHz Memory capacity: 256Mb Kind of interface: parallel Memory organisation: 32Mx8bit Kind of package: in-tray Case: TSOP66 II Operating voltage: 2.5V Kind of memory: DDR1; SDRAM Mounting: SMD Access time: 15ns Type of integrated circuit: DRAM memory кількість в упаковці: 108 шт |
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AS4C32M8D1-5TCNTR | Alliance Memory | DRAM |
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AS4C32M8D1-5TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32Mx8bit; 2.5V; 200MHz; 15ns; TSOP66 II; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 32Mx8bit Clock frequency: 200MHz Access time: 15ns Case: TSOP66 II Memory capacity: 256Mb Mounting: SMD Operating temperature: 0...70°C Kind of package: reel Operating voltage: 2.5V |
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AS4C32M8D1-5TIN | Alliance Memory | DRAM |
на замовлення 108 шт: термін постачання 21-30 дні (днів) |
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AS4C32M8D1-5TIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32Mx8bit; 2.5V; 200MHz; 15ns; TSOP66 II; -40÷85°C Operating temperature: -40...85°C Clock frequency: 200MHz Memory capacity: 256Mb Kind of interface: parallel Memory organisation: 32Mx8bit Kind of package: in-tray Case: TSOP66 II Operating voltage: 2.5V Kind of memory: DDR1; SDRAM Mounting: SMD Access time: 15ns Type of integrated circuit: DRAM memory кількість в упаковці: 108 шт |
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AS4C32M8D1-5TINTR | Alliance Memory | DRAM |
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AS4C32M8D1-5TINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32Mx8bit; 2.5V; 200MHz; 15ns; TSOP66 II; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 32Mx8bit Clock frequency: 200MHz Access time: 15ns Case: TSOP66 II Memory capacity: 256Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: reel Operating voltage: 2.5V |
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AS4C32M8SA-6TIN | Alliance Memory | DRAM Chip SDRAM 256Mbit 32Mx8 3.3V 54-Pin TSOP-II Tray |
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AS4C32M8SA-6TIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 32Mx8bit; 3.3V; 166MHz; 5ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 32Mx8bit Access time: 5ns Case: TSOP54 II Mounting: SMD Kind of package: in-tray Operating temperature: -40...85°C Clock frequency: 166MHz Operating voltage: 3.3V |
на замовлення 106 шт: термін постачання 21-30 дні (днів) |
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AS4C32M8SA-6TINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 32Mx8bit; 3.3V; 166MHz; 5ns; TSOP54 II Mounting: SMD Case: TSOP54 II Kind of package: reel Operating temperature: -40...85°C Memory: 256Mb DRAM Operating voltage: 3.3V Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 32Mx8bit Access time: 5ns Clock frequency: 166MHz |
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AS4C32M8SA-7TCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 32Mx8bit; 3.3V; 143MHz; 5.4ns; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 32Mx8bit Access time: 5.4ns Case: TSOP54 II Mounting: SMD Kind of package: in-tray Operating temperature: 0...70°C Clock frequency: 143MHz Operating voltage: 3.3V |
на замовлення 106 шт: термін постачання 21-30 дні (днів) |
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AS4C32M8SA-7TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32Mx8bit; 3.3V; 143MHz; 5.4ns; TSOP54 II; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 32Mx8bit Clock frequency: 143MHz Access time: 5.4ns Case: TSOP54 II Memory capacity: 256Mb Mounting: SMD Operating temperature: 0...70°C Kind of package: reel Operating voltage: 3.3V |
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AS4C32M8SA-6TIN | Alliance Memory | DRAM SDRAM, 256M, 32M X8, 3.3V, 54 PIN TSOP II, 166MHZ, INDUSTRIAL TEMP - Tray |
на замовлення 71 шт: термін постачання 21-30 дні (днів) |
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AS4C32M8SA-6TIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 32Mx8bit; 3.3V; 166MHz; 5ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 32Mx8bit Access time: 5ns Case: TSOP54 II Mounting: SMD Kind of package: in-tray Operating temperature: -40...85°C Clock frequency: 166MHz Operating voltage: 3.3V кількість в упаковці: 1 шт |
на замовлення 106 шт: термін постачання 14-21 дні (днів) |
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AS4C32M8SA-6TINTR | Alliance Memory | DRAM SDRAM, 256M, 32M X8, 3.3V, 54 PIN TSOP II, 166MHZ, INDUSTRIAL TEMP - Tape & Reel |
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AS4C32M8SA-6TINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 32Mx8bit; 3.3V; 166MHz; 5ns; TSOP54 II Mounting: SMD Case: TSOP54 II Kind of package: reel Operating temperature: -40...85°C Memory: 256Mb DRAM Operating voltage: 3.3V Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 32Mx8bit Access time: 5ns Clock frequency: 166MHz кількість в упаковці: 1000 шт |
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AS4C32M8SA-7TCN | Alliance Memory | DRAM SDRAM, 256M, 32M X 8, 3.3V, 54PIN TSOP II, 143 MHZ, COMMERCIAL TEMP - Tray |
на замовлення 10198 шт: термін постачання 21-30 дні (днів) |
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AS4C32M8SA-7TCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 32Mx8bit; 3.3V; 143MHz; 5.4ns; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 256Mb DRAM Memory organisation: 32Mx8bit Access time: 5.4ns Case: TSOP54 II Mounting: SMD Kind of package: in-tray Operating temperature: 0...70°C Clock frequency: 143MHz Operating voltage: 3.3V кількість в упаковці: 1 шт |
на замовлення 106 шт: термін постачання 14-21 дні (днів) |
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AS4C32M8SA-7TCNTR | Alliance Memory | DRAM 256Mb, 3.3V, 143Mhz 32M x 8 SDRAM |
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AS4C32M8SA-7TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32Mx8bit; 3.3V; 143MHz; 5.4ns; TSOP54 II; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 32Mx8bit Clock frequency: 143MHz Access time: 5.4ns Case: TSOP54 II Memory capacity: 256Mb Mounting: SMD Operating temperature: 0...70°C Kind of package: reel Operating voltage: 3.3V |
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AS4C4M16D1-5TCN | Alliance Memory | DRAM 64Mb, 3.3V, 200Mhz 4M x 16 DDR |
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AS4C4M16D1A-5TAN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 2.5V; 200MHz; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 64Mb DRAM Memory organisation: 4Mx16bit Clock frequency: 200MHz Case: TSOP66 II Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Operating voltage: 2.5V |
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AS4C4M16D1A-5TANTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 2.5V; 200MHz; TSOP66 II; reel Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 4Mx16bit Clock frequency: 200MHz Case: TSOP66 II Mounting: SMD Operating temperature: -40...105°C Kind of package: reel Operating voltage: 2.5V |
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AS4C4M16D1A-5TCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 2.5V; 200MHz; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 64Mb DRAM Memory organisation: 4Mx16bit Clock frequency: 200MHz Case: TSOP66 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V |
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AS4C4M16D1A-5TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 2.5V; 200MHz; TSOP66 II; reel Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 64Mb DRAM Memory organisation: 4Mx16bit Clock frequency: 200MHz Case: TSOP66 II Mounting: SMD Operating temperature: 0...70°C Kind of package: reel Operating voltage: 2.5V |
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AS4C4M16D1A-5TIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 2.5V; 200MHz; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 64Mb DRAM Memory organisation: 4Mx16bit Clock frequency: 200MHz Case: TSOP66 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V |
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AS4C4M16D1A-5TINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 2.5V; 200MHz; TSOP66 II; reel Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 64Mb DRAM Memory organisation: 4Mx16bit Clock frequency: 200MHz Case: TSOP66 II Mounting: SMD Operating temperature: -40...85°C Kind of package: reel Operating voltage: 2.5V |
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AS4C4M16D1A-5TAN | Alliance Memory | DRAM 64Mb, DDR1, 4M x 16, 2.5V, 66pin TSOP II, 200 MHz, Automotive Temp(A) |
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AS4C4M16D1A-5TAN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 2.5V; 200MHz; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 64Mb DRAM Memory organisation: 4Mx16bit Clock frequency: 200MHz Case: TSOP66 II Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Operating voltage: 2.5V кількість в упаковці: 1 шт |
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AS4C4M16D1A-5TANTR | Alliance Memory | DRAM 64Mb, DDR1, 4M x 16, 2.5V, 66pin TSOP II, 200 MHz, Automotive Temp(A), T&R |
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AS4C4M16D1A-5TANTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 2.5V; 200MHz; TSOP66 II; reel Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 4Mx16bit Clock frequency: 200MHz Case: TSOP66 II Mounting: SMD Operating temperature: -40...105°C Kind of package: reel Operating voltage: 2.5V кількість в упаковці: 1000 шт |
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AS4C4M16D1A-5TCN | Alliance Memory | DRAM 64Mb, DDR1, 4M x 16, 2.5V, 66pin TSOP II, 200 MHz, Commercial Temp(A) |
на замовлення 189 шт: термін постачання 21-30 дні (днів) |
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AS4C4M16D1A-5TCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 2.5V; 200MHz; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 64Mb DRAM Memory organisation: 4Mx16bit Clock frequency: 200MHz Case: TSOP66 II Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V кількість в упаковці: 108 шт |
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AS4C4M16D1A-5TCNTR | Alliance Memory | DRAM 64Mb, DDR1, 4M x 16, 2.5V, 66pin TSOP II, 200 MHz, Commercial Temp(A), T&R |
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AS4C4M16D1A-5TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 2.5V; 200MHz; TSOP66 II; reel Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 64Mb DRAM Memory organisation: 4Mx16bit Clock frequency: 200MHz Case: TSOP66 II Mounting: SMD Operating temperature: 0...70°C Kind of package: reel Operating voltage: 2.5V кількість в упаковці: 1000 шт |
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AS4C4M16D1A-5TIN | Alliance Memory | DRAM DDR1, 64Mb, 4M x 16, 2.5V, 66pin TSOP II, 200 MHz, Industrial Temp(A) |
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AS4C4M16D1A-5TIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 2.5V; 200MHz; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 64Mb DRAM Memory organisation: 4Mx16bit Clock frequency: 200MHz Case: TSOP66 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V кількість в упаковці: 108 шт |
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AS4C4M16D1A-5TINTR | Alliance Memory | DRAM DDR1, 64Mb, 4M x 16, 2.5V, 66pin TSOP II, 200 MHz, Industrial Temp(A) Tape and Reel |
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AS4C4M16D1A-5TINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 2.5V; 200MHz; TSOP66 II; reel Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 64Mb DRAM Memory organisation: 4Mx16bit Clock frequency: 200MHz Case: TSOP66 II Mounting: SMD Operating temperature: -40...85°C Kind of package: reel Operating voltage: 2.5V кількість в упаковці: 1000 шт |
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AS4C4M16S-6BIN | Alliance Memory | DRAM 64Mb, 3.3V, 166Mhz 4M x 16 SDRAM |
на замовлення 767 шт: термін постачання 21-30 дні (днів) |
AS4C32M32MD1-5BINTR |
Виробник: Alliance Memory
DRAM 1G, 1.8V, 200Mhz 32M x 32 Mobile DDR
DRAM 1G, 1.8V, 200Mhz 32M x 32 Mobile DDR
товар відсутній
AS4C32M32MD1A-5BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx32bit; 1.7÷1.95V; 200MHz; 6ns; FBGA90
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 32Mx32bit
Clock frequency: 200MHz
Access time: 6ns
Case: FBGA90
Memory capacity: 1024Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 1.7...1.95V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx32bit; 1.7÷1.95V; 200MHz; 6ns; FBGA90
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 32Mx32bit
Clock frequency: 200MHz
Access time: 6ns
Case: FBGA90
Memory capacity: 1024Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 1.7...1.95V
товар відсутній
AS4C32M32MD1A-5BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 1.8V; 200MHz; 15ns; FPBGA60; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 200MHz
Access time: 15ns
Case: FPBGA60
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 1.8V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 1.8V; 200MHz; 15ns; FPBGA60; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 200MHz
Access time: 15ns
Case: FPBGA60
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 1.8V
товар відсутній
AS4C32M32MD1A-5BIN |
Виробник: Alliance Memory
DRAM 1G 1.8V 32M x 32 Mobile DDR I-Temp
DRAM 1G 1.8V 32M x 32 Mobile DDR I-Temp
на замовлення 290 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 736 грн |
10+ | 668.4 грн |
25+ | 568.99 грн |
50+ | 567.55 грн |
AS4C32M32MD1A-5BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx32bit; 1.7÷1.95V; 200MHz; 6ns; FBGA90
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 32Mx32bit
Clock frequency: 200MHz
Access time: 6ns
Case: FBGA90
Memory capacity: 1024Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 1.7...1.95V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx32bit; 1.7÷1.95V; 200MHz; 6ns; FBGA90
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 32Mx32bit
Clock frequency: 200MHz
Access time: 6ns
Case: FBGA90
Memory capacity: 1024Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 1.7...1.95V
товар відсутній
AS4C32M32MD1A-5BINTR |
Виробник: Alliance Memory
DRAM 1G 1.8V 32M x 32 Mobile DDR I-Temp
DRAM 1G 1.8V 32M x 32 Mobile DDR I-Temp
товар відсутній
AS4C32M32MD1A-5BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 1.8V; 200MHz; 15ns; FPBGA60; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 200MHz
Access time: 15ns
Case: FPBGA60
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 1.8V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 1.8V; 200MHz; 15ns; FPBGA60; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 200MHz
Access time: 15ns
Case: FPBGA60
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 1.8V
товар відсутній
AS4C32M32MD2-25BCN |
Виробник: Alliance Memory
DRAM 1G 1.2V/1.8V 400MHz 32Mx32 Mobile DDR2
DRAM 1G 1.2V/1.8V 400MHz 32Mx32 Mobile DDR2
на замовлення 242 шт:
термін постачання 21-30 дні (днів)AS4C32M32MD2-25BCNTR |
Виробник: Alliance Memory
DRAM 1G 1.2V/1.8V 400MHz 32Mx32 Mobile DDR2
DRAM 1G 1.2V/1.8V 400MHz 32Mx32 Mobile DDR2
товар відсутній
AS4C32M32MD2A-25BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx32bit; 1.8V; 400MHz; 18ns; FBGA134; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 32Mx32bit
Clock frequency: 400MHz
Access time: 18ns
Case: FBGA134
Memory capacity: 1Gb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 1.8V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx32bit; 1.8V; 400MHz; 18ns; FBGA134; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 32Mx32bit
Clock frequency: 400MHz
Access time: 18ns
Case: FBGA134
Memory capacity: 1Gb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 1.8V
товар відсутній
AS4C32M32MD2A-25BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 32Mx32bit; 1.2÷1.8V; 400MHz; 18ns; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 1Gb DRAM
Memory organisation: 32Mx32bit
Clock frequency: 400MHz
Access time: 18ns
Case: FBGA134
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 1.2...1.8V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 32Mx32bit; 1.2÷1.8V; 400MHz; 18ns; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 1Gb DRAM
Memory organisation: 32Mx32bit
Clock frequency: 400MHz
Access time: 18ns
Case: FBGA134
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 1.2...1.8V
товар відсутній
AS4C32M32MD2A-25BIN |
Виробник: Alliance Memory
DRAM LPDDR2, 1G, 32M X 32, 1.2V, 134ball BGA, (A-DIE), INDUSTRIAL TEMP - Tray
DRAM LPDDR2, 1G, 32M X 32, 1.2V, 134ball BGA, (A-DIE), INDUSTRIAL TEMP - Tray
на замовлення 67 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 605.92 грн |
10+ | 549.28 грн |
25+ | 466.13 грн |
100+ | 406.42 грн |
256+ | 394.19 грн |
512+ | 375.49 грн |
1024+ | 363.26 грн |
AS4C32M32MD2A-25BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx32bit; 1.8V; 400MHz; 18ns; FBGA134; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 32Mx32bit
Clock frequency: 400MHz
Access time: 18ns
Case: FBGA134
Memory capacity: 1Gb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 1.8V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx32bit; 1.8V; 400MHz; 18ns; FBGA134; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 32Mx32bit
Clock frequency: 400MHz
Access time: 18ns
Case: FBGA134
Memory capacity: 1Gb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 1.8V
товар відсутній
AS4C32M32MD2A-25BINTR |
Виробник: Alliance Memory
DRAM LPDDR2, 1G, 32M X 32, 1.2V, 134ball BGA, (A-DIE), INDUSTRIAL TEMP - Tape & Reel
DRAM LPDDR2, 1G, 32M X 32, 1.2V, 134ball BGA, (A-DIE), INDUSTRIAL TEMP - Tape & Reel
товар відсутній
AS4C32M32MD2A-25BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 32Mx32bit; 1.2÷1.8V; 400MHz; 18ns; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 1Gb DRAM
Memory organisation: 32Mx32bit
Clock frequency: 400MHz
Access time: 18ns
Case: FBGA134
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 1.2...1.8V
кількість в упаковці: 1000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 32Mx32bit; 1.2÷1.8V; 400MHz; 18ns; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 1Gb DRAM
Memory organisation: 32Mx32bit
Clock frequency: 400MHz
Access time: 18ns
Case: FBGA134
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 1.2...1.8V
кількість в упаковці: 1000 шт
товар відсутній
AS4C32M8D1-5TCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 2.5V; 200MHz; 15ns; TSOP66 II; 0÷70°C
Operating temperature: 0...70°C
Clock frequency: 200MHz
Memory capacity: 256Mb
Kind of interface: parallel
Memory organisation: 32Mx8bit
Kind of package: in-tray
Case: TSOP66 II
Operating voltage: 2.5V
Kind of memory: DDR1; SDRAM
Mounting: SMD
Access time: 15ns
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 2.5V; 200MHz; 15ns; TSOP66 II; 0÷70°C
Operating temperature: 0...70°C
Clock frequency: 200MHz
Memory capacity: 256Mb
Kind of interface: parallel
Memory organisation: 32Mx8bit
Kind of package: in-tray
Case: TSOP66 II
Operating voltage: 2.5V
Kind of memory: DDR1; SDRAM
Mounting: SMD
Access time: 15ns
Type of integrated circuit: DRAM memory
товар відсутній
AS4C32M8D1-5TCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 2.5V; 200MHz; 15ns; TSOP66 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 32Mx8bit
Clock frequency: 200MHz
Access time: 15ns
Case: TSOP66 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 2.5V; 200MHz; 15ns; TSOP66 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 32Mx8bit
Clock frequency: 200MHz
Access time: 15ns
Case: TSOP66 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 2.5V
товар відсутній
AS4C32M8D1-5TIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 2.5V; 200MHz; 15ns; TSOP66 II; -40÷85°C
Operating temperature: -40...85°C
Clock frequency: 200MHz
Memory capacity: 256Mb
Kind of interface: parallel
Memory organisation: 32Mx8bit
Kind of package: in-tray
Case: TSOP66 II
Operating voltage: 2.5V
Kind of memory: DDR1; SDRAM
Mounting: SMD
Access time: 15ns
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 2.5V; 200MHz; 15ns; TSOP66 II; -40÷85°C
Operating temperature: -40...85°C
Clock frequency: 200MHz
Memory capacity: 256Mb
Kind of interface: parallel
Memory organisation: 32Mx8bit
Kind of package: in-tray
Case: TSOP66 II
Operating voltage: 2.5V
Kind of memory: DDR1; SDRAM
Mounting: SMD
Access time: 15ns
Type of integrated circuit: DRAM memory
товар відсутній
AS4C32M8D1-5TINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 2.5V; 200MHz; 15ns; TSOP66 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 32Mx8bit
Clock frequency: 200MHz
Access time: 15ns
Case: TSOP66 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 2.5V; 200MHz; 15ns; TSOP66 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 32Mx8bit
Clock frequency: 200MHz
Access time: 15ns
Case: TSOP66 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 2.5V
товар відсутній
AS4C32M8D1-5TCN |
Виробник: Alliance Memory
DRAM
DRAM
на замовлення 108 шт:
термін постачання 21-30 дні (днів)AS4C32M8D1-5TCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 2.5V; 200MHz; 15ns; TSOP66 II; 0÷70°C
Operating temperature: 0...70°C
Clock frequency: 200MHz
Memory capacity: 256Mb
Kind of interface: parallel
Memory organisation: 32Mx8bit
Kind of package: in-tray
Case: TSOP66 II
Operating voltage: 2.5V
Kind of memory: DDR1; SDRAM
Mounting: SMD
Access time: 15ns
Type of integrated circuit: DRAM memory
кількість в упаковці: 108 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 2.5V; 200MHz; 15ns; TSOP66 II; 0÷70°C
Operating temperature: 0...70°C
Clock frequency: 200MHz
Memory capacity: 256Mb
Kind of interface: parallel
Memory organisation: 32Mx8bit
Kind of package: in-tray
Case: TSOP66 II
Operating voltage: 2.5V
Kind of memory: DDR1; SDRAM
Mounting: SMD
Access time: 15ns
Type of integrated circuit: DRAM memory
кількість в упаковці: 108 шт
товар відсутній
AS4C32M8D1-5TCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 2.5V; 200MHz; 15ns; TSOP66 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 32Mx8bit
Clock frequency: 200MHz
Access time: 15ns
Case: TSOP66 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 2.5V; 200MHz; 15ns; TSOP66 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 32Mx8bit
Clock frequency: 200MHz
Access time: 15ns
Case: TSOP66 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 2.5V
товар відсутній
AS4C32M8D1-5TIN |
Виробник: Alliance Memory
DRAM
DRAM
на замовлення 108 шт:
термін постачання 21-30 дні (днів)AS4C32M8D1-5TIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 2.5V; 200MHz; 15ns; TSOP66 II; -40÷85°C
Operating temperature: -40...85°C
Clock frequency: 200MHz
Memory capacity: 256Mb
Kind of interface: parallel
Memory organisation: 32Mx8bit
Kind of package: in-tray
Case: TSOP66 II
Operating voltage: 2.5V
Kind of memory: DDR1; SDRAM
Mounting: SMD
Access time: 15ns
Type of integrated circuit: DRAM memory
кількість в упаковці: 108 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 2.5V; 200MHz; 15ns; TSOP66 II; -40÷85°C
Operating temperature: -40...85°C
Clock frequency: 200MHz
Memory capacity: 256Mb
Kind of interface: parallel
Memory organisation: 32Mx8bit
Kind of package: in-tray
Case: TSOP66 II
Operating voltage: 2.5V
Kind of memory: DDR1; SDRAM
Mounting: SMD
Access time: 15ns
Type of integrated circuit: DRAM memory
кількість в упаковці: 108 шт
товар відсутній
AS4C32M8D1-5TINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 2.5V; 200MHz; 15ns; TSOP66 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 32Mx8bit
Clock frequency: 200MHz
Access time: 15ns
Case: TSOP66 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 2.5V; 200MHz; 15ns; TSOP66 II; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 32Mx8bit
Clock frequency: 200MHz
Access time: 15ns
Case: TSOP66 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 2.5V
товар відсутній
AS4C32M8SA-6TIN |
Виробник: Alliance Memory
DRAM Chip SDRAM 256Mbit 32Mx8 3.3V 54-Pin TSOP-II Tray
DRAM Chip SDRAM 256Mbit 32Mx8 3.3V 54-Pin TSOP-II Tray
товар відсутній
AS4C32M8SA-6TIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 32Mx8bit; 3.3V; 166MHz; 5ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 32Mx8bit
Access time: 5ns
Case: TSOP54 II
Mounting: SMD
Kind of package: in-tray
Operating temperature: -40...85°C
Clock frequency: 166MHz
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 32Mx8bit; 3.3V; 166MHz; 5ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 32Mx8bit
Access time: 5ns
Case: TSOP54 II
Mounting: SMD
Kind of package: in-tray
Operating temperature: -40...85°C
Clock frequency: 166MHz
Operating voltage: 3.3V
на замовлення 106 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 418 грн |
3+ | 364.16 грн |
4+ | 283.24 грн |
9+ | 268.25 грн |
25+ | 261.51 грн |
AS4C32M8SA-6TINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 32Mx8bit; 3.3V; 166MHz; 5ns; TSOP54 II
Mounting: SMD
Case: TSOP54 II
Kind of package: reel
Operating temperature: -40...85°C
Memory: 256Mb DRAM
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx8bit
Access time: 5ns
Clock frequency: 166MHz
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 32Mx8bit; 3.3V; 166MHz; 5ns; TSOP54 II
Mounting: SMD
Case: TSOP54 II
Kind of package: reel
Operating temperature: -40...85°C
Memory: 256Mb DRAM
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx8bit
Access time: 5ns
Clock frequency: 166MHz
товар відсутній
AS4C32M8SA-7TCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 32Mx8bit; 3.3V; 143MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 32Mx8bit
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Kind of package: in-tray
Operating temperature: 0...70°C
Clock frequency: 143MHz
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 32Mx8bit; 3.3V; 143MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 32Mx8bit
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Kind of package: in-tray
Operating temperature: 0...70°C
Clock frequency: 143MHz
Operating voltage: 3.3V
на замовлення 106 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 332.46 грн |
4+ | 227.79 грн |
11+ | 215.8 грн |
AS4C32M8SA-7TCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 3.3V; 143MHz; 5.4ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx8bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 3.3V; 143MHz; 5.4ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx8bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C32M8SA-6TIN |
Виробник: Alliance Memory
DRAM SDRAM, 256M, 32M X8, 3.3V, 54 PIN TSOP II, 166MHZ, INDUSTRIAL TEMP - Tray
DRAM SDRAM, 256M, 32M X8, 3.3V, 54 PIN TSOP II, 166MHZ, INDUSTRIAL TEMP - Tray
на замовлення 71 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 248.41 грн |
108+ | 215.08 грн |
AS4C32M8SA-6TIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 32Mx8bit; 3.3V; 166MHz; 5ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 32Mx8bit
Access time: 5ns
Case: TSOP54 II
Mounting: SMD
Kind of package: in-tray
Operating temperature: -40...85°C
Clock frequency: 166MHz
Operating voltage: 3.3V
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 32Mx8bit; 3.3V; 166MHz; 5ns; TSOP54 II
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 32Mx8bit
Access time: 5ns
Case: TSOP54 II
Mounting: SMD
Kind of package: in-tray
Operating temperature: -40...85°C
Clock frequency: 166MHz
Operating voltage: 3.3V
кількість в упаковці: 1 шт
на замовлення 106 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 501.6 грн |
3+ | 453.8 грн |
4+ | 339.88 грн |
9+ | 321.9 грн |
25+ | 313.81 грн |
AS4C32M8SA-6TINTR |
Виробник: Alliance Memory
DRAM SDRAM, 256M, 32M X8, 3.3V, 54 PIN TSOP II, 166MHZ, INDUSTRIAL TEMP - Tape & Reel
DRAM SDRAM, 256M, 32M X8, 3.3V, 54 PIN TSOP II, 166MHZ, INDUSTRIAL TEMP - Tape & Reel
товар відсутній
AS4C32M8SA-6TINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 32Mx8bit; 3.3V; 166MHz; 5ns; TSOP54 II
Mounting: SMD
Case: TSOP54 II
Kind of package: reel
Operating temperature: -40...85°C
Memory: 256Mb DRAM
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx8bit
Access time: 5ns
Clock frequency: 166MHz
кількість в упаковці: 1000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 32Mx8bit; 3.3V; 166MHz; 5ns; TSOP54 II
Mounting: SMD
Case: TSOP54 II
Kind of package: reel
Operating temperature: -40...85°C
Memory: 256Mb DRAM
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx8bit
Access time: 5ns
Clock frequency: 166MHz
кількість в упаковці: 1000 шт
товар відсутній
AS4C32M8SA-7TCN |
Виробник: Alliance Memory
DRAM SDRAM, 256M, 32M X 8, 3.3V, 54PIN TSOP II, 143 MHZ, COMMERCIAL TEMP - Tray
DRAM SDRAM, 256M, 32M X 8, 3.3V, 54PIN TSOP II, 143 MHZ, COMMERCIAL TEMP - Tray
на замовлення 10198 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 328.14 грн |
10+ | 285.4 грн |
108+ | 190.62 грн |
216+ | 174.08 грн |
AS4C32M8SA-7TCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 32Mx8bit; 3.3V; 143MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 32Mx8bit
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Kind of package: in-tray
Operating temperature: 0...70°C
Clock frequency: 143MHz
Operating voltage: 3.3V
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 32Mx8bit; 3.3V; 143MHz; 5.4ns; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 256Mb DRAM
Memory organisation: 32Mx8bit
Access time: 5.4ns
Case: TSOP54 II
Mounting: SMD
Kind of package: in-tray
Operating temperature: 0...70°C
Clock frequency: 143MHz
Operating voltage: 3.3V
кількість в упаковці: 1 шт
на замовлення 106 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 398.95 грн |
4+ | 283.86 грн |
11+ | 258.96 грн |
108+ | 249.97 грн |
AS4C32M8SA-7TCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 3.3V; 143MHz; 5.4ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx8bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx8bit; 3.3V; 143MHz; 5.4ns; TSOP54 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 32Mx8bit
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP54 II
Memory capacity: 256Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C4M16D1A-5TAN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 2.5V; 200MHz; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 64Mb DRAM
Memory organisation: 4Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 2.5V; 200MHz; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 64Mb DRAM
Memory organisation: 4Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 2.5V
товар відсутній
AS4C4M16D1A-5TANTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 2.5V; 200MHz; TSOP66 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 4Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 2.5V; 200MHz; TSOP66 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 4Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Operating voltage: 2.5V
товар відсутній
AS4C4M16D1A-5TCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 2.5V; 200MHz; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 64Mb DRAM
Memory organisation: 4Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 2.5V; 200MHz; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 64Mb DRAM
Memory organisation: 4Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
товар відсутній
AS4C4M16D1A-5TCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 2.5V; 200MHz; TSOP66 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 64Mb DRAM
Memory organisation: 4Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 2.5V; 200MHz; TSOP66 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 64Mb DRAM
Memory organisation: 4Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 2.5V
товар відсутній
AS4C4M16D1A-5TIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 2.5V; 200MHz; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 64Mb DRAM
Memory organisation: 4Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 2.5V; 200MHz; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 64Mb DRAM
Memory organisation: 4Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
товар відсутній
AS4C4M16D1A-5TINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 2.5V; 200MHz; TSOP66 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 64Mb DRAM
Memory organisation: 4Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 2.5V; 200MHz; TSOP66 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 64Mb DRAM
Memory organisation: 4Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 2.5V
товар відсутній
AS4C4M16D1A-5TAN |
Виробник: Alliance Memory
DRAM 64Mb, DDR1, 4M x 16, 2.5V, 66pin TSOP II, 200 MHz, Automotive Temp(A)
DRAM 64Mb, DDR1, 4M x 16, 2.5V, 66pin TSOP II, 200 MHz, Automotive Temp(A)
товар відсутній
AS4C4M16D1A-5TAN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 2.5V; 200MHz; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 64Mb DRAM
Memory organisation: 4Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 2.5V
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 2.5V; 200MHz; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 64Mb DRAM
Memory organisation: 4Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 2.5V
кількість в упаковці: 1 шт
товар відсутній
AS4C4M16D1A-5TANTR |
Виробник: Alliance Memory
DRAM 64Mb, DDR1, 4M x 16, 2.5V, 66pin TSOP II, 200 MHz, Automotive Temp(A), T&R
DRAM 64Mb, DDR1, 4M x 16, 2.5V, 66pin TSOP II, 200 MHz, Automotive Temp(A), T&R
товар відсутній
AS4C4M16D1A-5TANTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 2.5V; 200MHz; TSOP66 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 4Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Operating voltage: 2.5V
кількість в упаковці: 1000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 2.5V; 200MHz; TSOP66 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 4Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Operating voltage: 2.5V
кількість в упаковці: 1000 шт
товар відсутній
AS4C4M16D1A-5TCN |
Виробник: Alliance Memory
DRAM 64Mb, DDR1, 4M x 16, 2.5V, 66pin TSOP II, 200 MHz, Commercial Temp(A)
DRAM 64Mb, DDR1, 4M x 16, 2.5V, 66pin TSOP II, 200 MHz, Commercial Temp(A)
на замовлення 189 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 155.26 грн |
10+ | 136.49 грн |
108+ | 112.94 грн |
AS4C4M16D1A-5TCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 2.5V; 200MHz; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 64Mb DRAM
Memory organisation: 4Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
кількість в упаковці: 108 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 2.5V; 200MHz; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 64Mb DRAM
Memory organisation: 4Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
кількість в упаковці: 108 шт
товар відсутній
AS4C4M16D1A-5TCNTR |
Виробник: Alliance Memory
DRAM 64Mb, DDR1, 4M x 16, 2.5V, 66pin TSOP II, 200 MHz, Commercial Temp(A), T&R
DRAM 64Mb, DDR1, 4M x 16, 2.5V, 66pin TSOP II, 200 MHz, Commercial Temp(A), T&R
товар відсутній
AS4C4M16D1A-5TCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 2.5V; 200MHz; TSOP66 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 64Mb DRAM
Memory organisation: 4Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 2.5V
кількість в упаковці: 1000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 2.5V; 200MHz; TSOP66 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 64Mb DRAM
Memory organisation: 4Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 2.5V
кількість в упаковці: 1000 шт
товар відсутній
AS4C4M16D1A-5TIN |
Виробник: Alliance Memory
DRAM DDR1, 64Mb, 4M x 16, 2.5V, 66pin TSOP II, 200 MHz, Industrial Temp(A)
DRAM DDR1, 64Mb, 4M x 16, 2.5V, 66pin TSOP II, 200 MHz, Industrial Temp(A)
товар відсутній
AS4C4M16D1A-5TIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 2.5V; 200MHz; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 64Mb DRAM
Memory organisation: 4Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
кількість в упаковці: 108 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 2.5V; 200MHz; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 64Mb DRAM
Memory organisation: 4Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
кількість в упаковці: 108 шт
товар відсутній
AS4C4M16D1A-5TINTR |
Виробник: Alliance Memory
DRAM DDR1, 64Mb, 4M x 16, 2.5V, 66pin TSOP II, 200 MHz, Industrial Temp(A) Tape and Reel
DRAM DDR1, 64Mb, 4M x 16, 2.5V, 66pin TSOP II, 200 MHz, Industrial Temp(A) Tape and Reel
товар відсутній
AS4C4M16D1A-5TINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 2.5V; 200MHz; TSOP66 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 64Mb DRAM
Memory organisation: 4Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 2.5V
кількість в упаковці: 1000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 2.5V; 200MHz; TSOP66 II; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 64Mb DRAM
Memory organisation: 4Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 2.5V
кількість в упаковці: 1000 шт
товар відсутній
AS4C4M16S-6BIN |
Виробник: Alliance Memory
DRAM 64Mb, 3.3V, 166Mhz 4M x 16 SDRAM
DRAM 64Mb, 3.3V, 166Mhz 4M x 16 SDRAM
на замовлення 767 шт:
термін постачання 21-30 дні (днів)