Продукція > ALLIANCE MEMORY > Всі товари виробника ALLIANCE MEMORY (3714) > Сторінка 13 з 62
Фото | Назва | Виробник | Інформація |
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AS4C2M32SA-6TCNTR | Alliance Memory | DRAM SDRAM,64M,3.3V 166MHz,2M x 32 |
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AS4C2M32SA-6TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 2Mx32bit; 3.3V; 166MHz; 5.5ns; TSOP86 Mounting: SMD Case: TSOP86 Kind of package: reel Operating temperature: 0...70°C Kind of interface: parallel Memory: 64Mb DRAM Operating voltage: 3.3V Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 2Mx32bit Access time: 5.5ns Clock frequency: 166MHz кількість в упаковці: 1000 шт |
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AS4C2M32SA-6TIN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS4C2M32SA-6TIN - DRAM, SDRAM, 64 Mbit, 2M x 32 Bit, 166 MHz, TSOP-II, 86 Pin(s) tariffCode: 85423231 DRAM-Ausführung: SDRAM rohsCompliant: YES IC-Montage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES IC-Gehäuse / Bauform: TSOP-II Speicherdichte: 64Mbit usEccn: EAR99 Versorgungsspannung, nom.: 3.3V Taktfrequenz, max.: 166MHz Betriebstemperatur, min.: -40°C euEccn: NLR Anzahl der Pins: 86Pins Produktpalette: - productTraceability: No Betriebstemperatur, max.: 85°C Speicherkonfiguration: 2M x 32 Bit SVHC: To Be Advised |
на замовлення 335 шт: термін постачання 21-31 дні (днів) |
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AS4C2M32SA-6TIN | Alliance Memory | DRAM SDRAM, 64MB, 2M X 32, 3.3V, 86PIN, TSOP II, 166MHZ, INDUSTRIAL TEMP - Tray |
на замовлення 1595 шт: термін постачання 21-30 дні (днів) |
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AS4C2M32SA-6TIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 2Mx32bit; 3.3V; 166MHz; 5.5ns; TSOP86 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 2Mx32bit Clock frequency: 166MHz Access time: 5.5ns Case: TSOP86 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 3.3V кількість в упаковці: 1 шт |
на замовлення 18 шт: термін постачання 14-21 дні (днів) |
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AS4C2M32SA-6TINTR | Alliance Memory | DRAM SDRAM,64M,3.3V 166MHz,2M x 32 |
на замовлення 886 шт: термін постачання 21-30 дні (днів) |
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AS4C2M32SA-6TINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 2Mx32bit; 3.3V; 166MHz; 5.5ns; TSOP86 Mounting: SMD Case: TSOP86 Kind of package: reel Operating temperature: -40...85°C Kind of interface: parallel Memory: 64Mb DRAM Operating voltage: 3.3V Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 2Mx32bit Access time: 5.5ns Clock frequency: 166MHz кількість в упаковці: 1000 шт |
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AS4C2M32SA-7TCN | Alliance Memory | DRAM SDRAM, 64MB, 2M X 32, 3.3V, 86PIN TSOP II 143 MHZ, COMMERCIAL TEMP - Tray |
на замовлення 244 шт: термін постачання 21-30 дні (днів) |
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AS4C2M32SA-7TCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 2Mx32bit; 3.3V; 143MHz; 5.5ns; TSOP86 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 2Mx32bit Clock frequency: 143MHz Access time: 5.5ns Case: TSOP86 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 3.3V кількість в упаковці: 1 шт |
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AS4C2M32SA-7TCNTR | Alliance Memory | DRAM SDRAM, 64MB, 2M X 32, 3.3V, 86PIN TSOP II 143 MHZ, COMMERCIAL TEMP - Tape & Reel |
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AS4C2M32SA-7TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 2Mx32bit; 3.3V; 143MHz; 5.5ns; TSOP86 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 2Mx32bit Clock frequency: 143MHz Access time: 5.5ns Case: TSOP86 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel Operating voltage: 3.3V кількість в упаковці: 1000 шт |
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AS4C32M16D1-5BAN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; -40÷105°C Memory: 512Mb DRAM Clock frequency: 200MHz Kind of memory: DDR1; SDRAM Operating temperature: -40...105°C Type of integrated circuit: DRAM memory Kind of package: in-tray Memory organisation: 32Mx16bit Operating voltage: 2.5V Mounting: SMD |
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AS4C32M16D1-5BANTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; -40÷105°C Memory: 512Mb DRAM Clock frequency: 200MHz Kind of memory: DDR1; SDRAM Operating temperature: -40...105°C Type of integrated circuit: DRAM memory Kind of package: reel Memory organisation: 32Mx16bit Operating voltage: 2.5V Mounting: SMD |
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AS4C32M16D1-5BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; 0÷70°C Memory: 512Mb DRAM Clock frequency: 200MHz Kind of memory: DDR1; SDRAM Operating temperature: 0...70°C Type of integrated circuit: DRAM memory Kind of interface: parallel Kind of package: in-tray Memory organisation: 32Mx16bit Operating voltage: 2.5V Mounting: SMD |
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AS4C32M16D1-5BCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; 0÷70°C; reel Memory: 512Mb DRAM Clock frequency: 200MHz Kind of memory: DDR1; SDRAM Operating temperature: 0...70°C Type of integrated circuit: DRAM memory Kind of package: reel Memory organisation: 32Mx16bit Operating voltage: 2.5V Mounting: SMD |
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AS4C32M16D1-5BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; -40÷95°C Memory: 512Mb DRAM Clock frequency: 200MHz Kind of memory: DDR1; SDRAM Operating temperature: -40...95°C Type of integrated circuit: DRAM memory Kind of interface: parallel Kind of package: in-tray Memory organisation: 32Mx16bit Operating voltage: 2.5V Mounting: SMD |
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AS4C32M16D1-5BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; -40÷95°C; reel Memory: 512Mb DRAM Clock frequency: 200MHz Kind of memory: DDR1; SDRAM Operating temperature: -40...95°C Type of integrated circuit: DRAM memory Kind of package: reel Memory organisation: 32Mx16bit Operating voltage: 2.5V Mounting: SMD |
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AS4C32M16D1-5BAN | Alliance Memory | DRAM DDR1, 512Mb, 32M X 16, 2.5V, 60-ball BGA, 200 MHz, Automotive Temp - Tray |
на замовлення 132 шт: термін постачання 21-30 дні (днів) |
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AS4C32M16D1-5BAN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; -40÷105°C Memory: 512Mb DRAM Clock frequency: 200MHz Kind of memory: DDR1; SDRAM Operating temperature: -40...105°C Type of integrated circuit: DRAM memory Kind of package: in-tray Memory organisation: 32Mx16bit Operating voltage: 2.5V Mounting: SMD кількість в упаковці: 1 шт |
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AS4C32M16D1-5BANTR | Alliance Memory | DRAM DDR1, 512Mb, 32M X 16, 2.5V, 60-ball BGA, 200 MHz, Automotive Temp - Tape & Reel |
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AS4C32M16D1-5BANTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; -40÷105°C Memory: 512Mb DRAM Clock frequency: 200MHz Kind of memory: DDR1; SDRAM Operating temperature: -40...105°C Type of integrated circuit: DRAM memory Kind of package: reel Memory organisation: 32Mx16bit Operating voltage: 2.5V Mounting: SMD кількість в упаковці: 2500 шт |
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AS4C32M16D1-5BCN | Alliance Memory | DRAM DDR1, 512Mb, 32M X 16, 2.5V, 60-ball BGA, 200 MHz, Commercial Temp - Tray |
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AS4C32M16D1-5BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; 0÷70°C Memory: 512Mb DRAM Clock frequency: 200MHz Kind of memory: DDR1; SDRAM Operating temperature: 0...70°C Type of integrated circuit: DRAM memory Kind of interface: parallel Kind of package: in-tray Memory organisation: 32Mx16bit Operating voltage: 2.5V Mounting: SMD кількість в упаковці: 240 шт |
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AS4C32M16D1-5BCNTR | Alliance Memory | DRAM 512M 2.5V 200Mhz 32M x 16 DDR1 |
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AS4C32M16D1-5BCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; 0÷70°C; reel Memory: 512Mb DRAM Clock frequency: 200MHz Kind of memory: DDR1; SDRAM Operating temperature: 0...70°C Type of integrated circuit: DRAM memory Kind of package: reel Memory organisation: 32Mx16bit Operating voltage: 2.5V Mounting: SMD кількість в упаковці: 2500 шт |
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AS4C32M16D1-5BIN | Alliance Memory | DRAM DDR1, 512Mb, 32M X 16, 2.5V, 60-ball BGA, 200 MHz, Industriall Temp - Tray |
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AS4C32M16D1-5BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; -40÷95°C Memory: 512Mb DRAM Clock frequency: 200MHz Kind of memory: DDR1; SDRAM Operating temperature: -40...95°C Type of integrated circuit: DRAM memory Kind of interface: parallel Kind of package: in-tray Memory organisation: 32Mx16bit Operating voltage: 2.5V Mounting: SMD кількість в упаковці: 240 шт |
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AS4C32M16D1-5BINTR | Alliance Memory | DRAM DDR1, 512Mb, 32M X 16, 2.5V, 60-ball BGA, 200 MHz, Industriall Temp, T&R |
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AS4C32M16D1-5BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; -40÷95°C; reel Memory: 512Mb DRAM Clock frequency: 200MHz Kind of memory: DDR1; SDRAM Operating temperature: -40...95°C Type of integrated circuit: DRAM memory Kind of package: reel Memory organisation: 32Mx16bit Operating voltage: 2.5V Mounting: SMD кількість в упаковці: 2500 шт |
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AS4C32M16D1-5TCN | Alliance Memory | DRAM 512Mb, 3.3V, 200Mhz 32M x 16 DDR |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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AS4C32M16D1A-5TAN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; TSOP66 II Clock frequency: 200MHz Kind of memory: DDR1; SDRAM Memory: 512Mb DRAM Operating temperature: -40...105°C Case: TSOP66 II Kind of package: in-tray Memory organisation: 32Mx16bit Type of integrated circuit: DRAM memory Mounting: SMD Operating voltage: 2.5V |
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AS4C32M16D1A-5TANTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; TSOP66 II Memory: 512Mb DRAM Clock frequency: 200MHz Kind of memory: DDR1; SDRAM Operating temperature: -40...105°C Type of integrated circuit: DRAM memory Kind of package: reel Memory organisation: 32Mx16bit Operating voltage: 2.5V Case: TSOP66 II Mounting: SMD |
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AS4C32M16D1A-5TCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32Mx16bit; 2.5V; 200MHz; TSOP66 II; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 32Mx16bit Clock frequency: 200MHz Case: TSOP66 II Memory capacity: 512Mb Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V |
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AS4C32M16D1A-5TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; TSOP66 II Memory: 512Mb DRAM Clock frequency: 200MHz Kind of memory: DDR1; SDRAM Operating temperature: 0...70°C Type of integrated circuit: DRAM memory Kind of package: reel Memory organisation: 32Mx16bit Operating voltage: 2.5V Case: TSOP66 II Mounting: SMD |
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AS4C32M16D1A-5TIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 512Mb DRAM Memory organisation: 32Mx16bit Clock frequency: 200MHz Case: TSOP66 II Mounting: SMD Operating temperature: -40...95°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V |
на замовлення 325 шт: термін постачання 21-30 дні (днів) |
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AS4C32M16D1A-5TINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; TSOP66 II Memory: 512Mb DRAM Clock frequency: 200MHz Kind of memory: DDR1; SDRAM Operating temperature: -40...95°C Type of integrated circuit: DRAM memory Kind of package: reel Memory organisation: 32Mx16bit Operating voltage: 2.5V Case: TSOP66 II Mounting: SMD |
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AS4C32M16D1A-5TAN | Alliance Memory | DRAM 512m, 2.5V, 200Mhz 32M x 16 DDR1 |
на замовлення 14 шт: термін постачання 21-30 дні (днів) |
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AS4C32M16D1A-5TAN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; TSOP66 II Clock frequency: 200MHz Kind of memory: DDR1; SDRAM Memory: 512Mb DRAM Operating temperature: -40...105°C Case: TSOP66 II Kind of package: in-tray Memory organisation: 32Mx16bit Type of integrated circuit: DRAM memory Mounting: SMD Operating voltage: 2.5V кількість в упаковці: 1 шт |
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AS4C32M16D1A-5TANTR | Alliance Memory | DRAM 512m, 2.5V, 200Mhz 32M x 16 DDR1 |
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AS4C32M16D1A-5TANTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; TSOP66 II Memory: 512Mb DRAM Clock frequency: 200MHz Kind of memory: DDR1; SDRAM Operating temperature: -40...105°C Type of integrated circuit: DRAM memory Kind of package: reel Memory organisation: 32Mx16bit Operating voltage: 2.5V Case: TSOP66 II Mounting: SMD кількість в упаковці: 1000 шт |
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AS4C32M16D1A-5TCN | Alliance Memory | DRAM DDR1, 512Mb, 32M X 16, 2.5V, 66pin TSOP II, 200 MHz, Commercial Temp A |
на замовлення 215 шт: термін постачання 21-30 дні (днів) |
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AS4C32M16D1A-5TCN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS4C32M16D1A-5TCN - DRAM, DDR1, 512 Mbit, 32M x 16 Bit, 200 MHz, TSOP-II, 66 Pin(s) tariffCode: 85423231 DRAM-Ausführung: DDR1 rohsCompliant: YES IC-Montage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES IC-Gehäuse / Bauform: TSOP-II Speicherdichte: 512Mbit usEccn: EAR99 Versorgungsspannung, nom.: 2.5V Taktfrequenz, max.: 200MHz Betriebstemperatur, min.: 0°C euEccn: NLR Anzahl der Pins: 66Pin(s) Produktpalette: - productTraceability: No Betriebstemperatur, max.: 70°C Speicherkonfiguration: 32M x 16 Bit SVHC: No SVHC (14-Jun-2023) |
на замовлення 108 шт: термін постачання 21-31 дні (днів) |
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AS4C32M16D1A-5TCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32Mx16bit; 2.5V; 200MHz; TSOP66 II; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 32Mx16bit Clock frequency: 200MHz Case: TSOP66 II Memory capacity: 512Mb Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V |
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AS4C32M16D1A-5TCNTR | Alliance Memory | DRAM |
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AS4C32M16D1A-5TCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; TSOP66 II Memory: 512Mb DRAM Clock frequency: 200MHz Kind of memory: DDR1; SDRAM Operating temperature: 0...70°C Type of integrated circuit: DRAM memory Kind of package: reel Memory organisation: 32Mx16bit Operating voltage: 2.5V Case: TSOP66 II Mounting: SMD кількість в упаковці: 1000 шт |
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AS4C32M16D1A-5TIN | Alliance Memory | DRAM DDR1, 512Mb, 32M X 16, 2.5V, 66pin TSOP II, 200 MHz, Industrial Temp (A) |
на замовлення 258 шт: термін постачання 21-30 дні (днів) |
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AS4C32M16D1A-5TIN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS4C32M16D1A-5TIN - DRAM, DDR1, 512 Mbit, 32M x 16 Bit, 200 MHz, TSOP-II, 66 Pin(s) tariffCode: 85423231 DRAM-Ausführung: DDR1 rohsCompliant: YES IC-Montage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES IC-Gehäuse / Bauform: TSOP-II Speicherdichte: 512Mbit usEccn: EAR99 Versorgungsspannung, nom.: 2.5V Taktfrequenz, max.: 200MHz Betriebstemperatur, min.: -40°C euEccn: NLR Anzahl der Pins: 66Pin(s) Produktpalette: - productTraceability: No Betriebstemperatur, max.: 85°C Speicherkonfiguration: 32M x 16 Bit SVHC: No SVHC (14-Jun-2023) |
на замовлення 436 шт: термін постачання 21-31 дні (днів) |
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AS4C32M16D1A-5TIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 512Mb DRAM Memory organisation: 32Mx16bit Clock frequency: 200MHz Case: TSOP66 II Mounting: SMD Operating temperature: -40...95°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V кількість в упаковці: 1 шт |
на замовлення 325 шт: термін постачання 14-21 дні (днів) |
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AS4C32M16D1A-5TINTR | Alliance Memory | DRAM |
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AS4C32M16D1A-5TINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; TSOP66 II Memory: 512Mb DRAM Clock frequency: 200MHz Kind of memory: DDR1; SDRAM Operating temperature: -40...95°C Type of integrated circuit: DRAM memory Kind of package: reel Memory organisation: 32Mx16bit Operating voltage: 2.5V Case: TSOP66 II Mounting: SMD кількість в упаковці: 1000 шт |
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AS4C32M16D2-25BCN | Alliance Memory | DRAM 512M, 1.8V, 32M x 16 DDR2 |
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AS4C32M16D2A-25BAN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32Mx16bit; 1.8V; 400MHz; 12.5ns; FBGA84; -40÷105°C Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 32Mx16bit Clock frequency: 400MHz Access time: 12.5ns Case: FBGA84 Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Operating voltage: 1.8V |
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AS4C32M16D2A-25BANTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32Mx16bit; 1.8V; 400MHz; 12.5ns; FBGA84; -40÷105°C Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 32Mx16bit Clock frequency: 400MHz Access time: 12.5ns Case: FBGA84 Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...105°C Kind of package: reel Operating voltage: 1.8V |
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AS4C32M16D2A-25BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 1.8V; 400MHz; 12.5ns; FBGA84 Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory: 512Mb DRAM Case: FBGA84 Mounting: SMD Operating temperature: 0...85°C Operating voltage: 1.8V Clock frequency: 400MHz Kind of interface: parallel Kind of package: in-tray Access time: 12.5ns Memory organisation: 32Mx16bit |
на замовлення 146 шт: термін постачання 21-30 дні (днів) |
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AS4C32M16D2A-25BCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32Mx16bit; 1.8V; 400MHz; 12.5ns; FBGA84; 0÷85°C Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 32Mx16bit Clock frequency: 400MHz Access time: 12.5ns Case: FBGA84 Memory capacity: 512Mb Mounting: SMD Operating temperature: 0...85°C Kind of package: reel Operating voltage: 1.8V |
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AS4C32M16D2A-25BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32Mx16bit; 1.8V; 400MHz; 12.5ns; FBGA84; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 32Mx16bit Clock frequency: 400MHz Access time: 12.5ns Case: FBGA84 Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 1.8V |
товар відсутній |
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AS4C32M16D2A-25BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32Mx16bit; 1.8V; 400MHz; 12.5ns; FBGA84; -40÷95°C Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 32Mx16bit Clock frequency: 400MHz Access time: 12.5ns Case: FBGA84 Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...95°C Kind of package: reel Operating voltage: 1.8V |
товар відсутній |
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AS4C32M16D2A-25BAN | Alliance Memory | DRAM |
на замовлення 178 шт: термін постачання 21-30 дні (днів) |
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AS4C32M16D2A-25BAN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 32Mx16bit; 1.8V; 400MHz; 12.5ns; FBGA84; -40÷105°C Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 32Mx16bit Clock frequency: 400MHz Access time: 12.5ns Case: FBGA84 Memory capacity: 512Mb Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Operating voltage: 1.8V |
товар відсутній |
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AS4C32M16D2A-25BANTR | Alliance Memory | DRAM |
товар відсутній |
AS4C2M32SA-6TCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 2Mx32bit; 3.3V; 166MHz; 5.5ns; TSOP86
Mounting: SMD
Case: TSOP86
Kind of package: reel
Operating temperature: 0...70°C
Kind of interface: parallel
Memory: 64Mb DRAM
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 2Mx32bit
Access time: 5.5ns
Clock frequency: 166MHz
кількість в упаковці: 1000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 2Mx32bit; 3.3V; 166MHz; 5.5ns; TSOP86
Mounting: SMD
Case: TSOP86
Kind of package: reel
Operating temperature: 0...70°C
Kind of interface: parallel
Memory: 64Mb DRAM
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 2Mx32bit
Access time: 5.5ns
Clock frequency: 166MHz
кількість в упаковці: 1000 шт
товар відсутній
AS4C2M32SA-6TIN |
Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C2M32SA-6TIN - DRAM, SDRAM, 64 Mbit, 2M x 32 Bit, 166 MHz, TSOP-II, 86 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: SDRAM
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: TSOP-II
Speicherdichte: 64Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Betriebstemperatur, min.: -40°C
euEccn: NLR
Anzahl der Pins: 86Pins
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 85°C
Speicherkonfiguration: 2M x 32 Bit
SVHC: To Be Advised
Description: ALLIANCE MEMORY - AS4C2M32SA-6TIN - DRAM, SDRAM, 64 Mbit, 2M x 32 Bit, 166 MHz, TSOP-II, 86 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: SDRAM
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: TSOP-II
Speicherdichte: 64Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Betriebstemperatur, min.: -40°C
euEccn: NLR
Anzahl der Pins: 86Pins
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 85°C
Speicherkonfiguration: 2M x 32 Bit
SVHC: To Be Advised
на замовлення 335 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 421.22 грн |
10+ | 344.57 грн |
25+ | 331.65 грн |
50+ | 295.23 грн |
100+ | 261.45 грн |
250+ | 257.3 грн |
AS4C2M32SA-6TIN |
Виробник: Alliance Memory
DRAM SDRAM, 64MB, 2M X 32, 3.3V, 86PIN, TSOP II, 166MHZ, INDUSTRIAL TEMP - Tray
DRAM SDRAM, 64MB, 2M X 32, 3.3V, 86PIN, TSOP II, 166MHZ, INDUSTRIAL TEMP - Tray
на замовлення 1595 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 393.6 грн |
10+ | 351.57 грн |
108+ | 263.28 грн |
216+ | 251.05 грн |
540+ | 250.33 грн |
AS4C2M32SA-6TIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 2Mx32bit; 3.3V; 166MHz; 5.5ns; TSOP86
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 2Mx32bit
Clock frequency: 166MHz
Access time: 5.5ns
Case: TSOP86
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 2Mx32bit; 3.3V; 166MHz; 5.5ns; TSOP86
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 2Mx32bit
Clock frequency: 166MHz
Access time: 5.5ns
Case: TSOP86
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
кількість в упаковці: 1 шт
на замовлення 18 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 453.18 грн |
4+ | 321.21 грн |
10+ | 292.23 грн |
108+ | 284.14 грн |
AS4C2M32SA-6TINTR |
Виробник: Alliance Memory
DRAM SDRAM,64M,3.3V 166MHz,2M x 32
DRAM SDRAM,64M,3.3V 166MHz,2M x 32
на замовлення 886 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 401.99 грн |
10+ | 359.85 грн |
100+ | 272.63 грн |
500+ | 262.56 грн |
1000+ | 243.85 грн |
10000+ | 235.94 грн |
AS4C2M32SA-6TINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 2Mx32bit; 3.3V; 166MHz; 5.5ns; TSOP86
Mounting: SMD
Case: TSOP86
Kind of package: reel
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 64Mb DRAM
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 2Mx32bit
Access time: 5.5ns
Clock frequency: 166MHz
кількість в упаковці: 1000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 2Mx32bit; 3.3V; 166MHz; 5.5ns; TSOP86
Mounting: SMD
Case: TSOP86
Kind of package: reel
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 64Mb DRAM
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 2Mx32bit
Access time: 5.5ns
Clock frequency: 166MHz
кількість в упаковці: 1000 шт
товар відсутній
AS4C2M32SA-7TCN |
Виробник: Alliance Memory
DRAM SDRAM, 64MB, 2M X 32, 3.3V, 86PIN TSOP II 143 MHZ, COMMERCIAL TEMP - Tray
DRAM SDRAM, 64MB, 2M X 32, 3.3V, 86PIN TSOP II 143 MHZ, COMMERCIAL TEMP - Tray
на замовлення 244 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 292.89 грн |
10+ | 236.59 грн |
108+ | 198.54 грн |
216+ | 197.1 грн |
540+ | 180.55 грн |
AS4C2M32SA-7TCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 2Mx32bit; 3.3V; 143MHz; 5.5ns; TSOP86
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 2Mx32bit
Clock frequency: 143MHz
Access time: 5.5ns
Case: TSOP86
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 2Mx32bit; 3.3V; 143MHz; 5.5ns; TSOP86
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 2Mx32bit
Clock frequency: 143MHz
Access time: 5.5ns
Case: TSOP86
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
кількість в упаковці: 1 шт
товар відсутній
AS4C2M32SA-7TCNTR |
Виробник: Alliance Memory
DRAM SDRAM, 64MB, 2M X 32, 3.3V, 86PIN TSOP II 143 MHZ, COMMERCIAL TEMP - Tape & Reel
DRAM SDRAM, 64MB, 2M X 32, 3.3V, 86PIN TSOP II 143 MHZ, COMMERCIAL TEMP - Tape & Reel
товар відсутній
AS4C2M32SA-7TCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 2Mx32bit; 3.3V; 143MHz; 5.5ns; TSOP86
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 2Mx32bit
Clock frequency: 143MHz
Access time: 5.5ns
Case: TSOP86
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
кількість в упаковці: 1000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 2Mx32bit; 3.3V; 143MHz; 5.5ns; TSOP86
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 64Mb DRAM
Memory organisation: 2Mx32bit
Clock frequency: 143MHz
Access time: 5.5ns
Case: TSOP86
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
кількість в упаковці: 1000 шт
товар відсутній
AS4C32M16D1-5BAN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; -40÷105°C
Memory: 512Mb DRAM
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Operating temperature: -40...105°C
Type of integrated circuit: DRAM memory
Kind of package: in-tray
Memory organisation: 32Mx16bit
Operating voltage: 2.5V
Mounting: SMD
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; -40÷105°C
Memory: 512Mb DRAM
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Operating temperature: -40...105°C
Type of integrated circuit: DRAM memory
Kind of package: in-tray
Memory organisation: 32Mx16bit
Operating voltage: 2.5V
Mounting: SMD
товар відсутній
AS4C32M16D1-5BANTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; -40÷105°C
Memory: 512Mb DRAM
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Operating temperature: -40...105°C
Type of integrated circuit: DRAM memory
Kind of package: reel
Memory organisation: 32Mx16bit
Operating voltage: 2.5V
Mounting: SMD
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; -40÷105°C
Memory: 512Mb DRAM
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Operating temperature: -40...105°C
Type of integrated circuit: DRAM memory
Kind of package: reel
Memory organisation: 32Mx16bit
Operating voltage: 2.5V
Mounting: SMD
товар відсутній
AS4C32M16D1-5BCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; 0÷70°C
Memory: 512Mb DRAM
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Operating temperature: 0...70°C
Type of integrated circuit: DRAM memory
Kind of interface: parallel
Kind of package: in-tray
Memory organisation: 32Mx16bit
Operating voltage: 2.5V
Mounting: SMD
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; 0÷70°C
Memory: 512Mb DRAM
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Operating temperature: 0...70°C
Type of integrated circuit: DRAM memory
Kind of interface: parallel
Kind of package: in-tray
Memory organisation: 32Mx16bit
Operating voltage: 2.5V
Mounting: SMD
товар відсутній
AS4C32M16D1-5BCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; 0÷70°C; reel
Memory: 512Mb DRAM
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Operating temperature: 0...70°C
Type of integrated circuit: DRAM memory
Kind of package: reel
Memory organisation: 32Mx16bit
Operating voltage: 2.5V
Mounting: SMD
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; 0÷70°C; reel
Memory: 512Mb DRAM
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Operating temperature: 0...70°C
Type of integrated circuit: DRAM memory
Kind of package: reel
Memory organisation: 32Mx16bit
Operating voltage: 2.5V
Mounting: SMD
товар відсутній
AS4C32M16D1-5BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; -40÷95°C
Memory: 512Mb DRAM
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of interface: parallel
Kind of package: in-tray
Memory organisation: 32Mx16bit
Operating voltage: 2.5V
Mounting: SMD
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; -40÷95°C
Memory: 512Mb DRAM
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of interface: parallel
Kind of package: in-tray
Memory organisation: 32Mx16bit
Operating voltage: 2.5V
Mounting: SMD
товар відсутній
AS4C32M16D1-5BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; -40÷95°C; reel
Memory: 512Mb DRAM
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of package: reel
Memory organisation: 32Mx16bit
Operating voltage: 2.5V
Mounting: SMD
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; -40÷95°C; reel
Memory: 512Mb DRAM
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of package: reel
Memory organisation: 32Mx16bit
Operating voltage: 2.5V
Mounting: SMD
товар відсутній
AS4C32M16D1-5BAN |
Виробник: Alliance Memory
DRAM DDR1, 512Mb, 32M X 16, 2.5V, 60-ball BGA, 200 MHz, Automotive Temp - Tray
DRAM DDR1, 512Mb, 32M X 16, 2.5V, 60-ball BGA, 200 MHz, Automotive Temp - Tray
на замовлення 132 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 497.66 грн |
10+ | 391.28 грн |
100+ | 339.53 грн |
240+ | 317.95 грн |
480+ | 303.56 грн |
5040+ | 299.24 грн |
10080+ | 294.93 грн |
AS4C32M16D1-5BAN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; -40÷105°C
Memory: 512Mb DRAM
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Operating temperature: -40...105°C
Type of integrated circuit: DRAM memory
Kind of package: in-tray
Memory organisation: 32Mx16bit
Operating voltage: 2.5V
Mounting: SMD
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; -40÷105°C
Memory: 512Mb DRAM
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Operating temperature: -40...105°C
Type of integrated circuit: DRAM memory
Kind of package: in-tray
Memory organisation: 32Mx16bit
Operating voltage: 2.5V
Mounting: SMD
кількість в упаковці: 1 шт
товар відсутній
AS4C32M16D1-5BANTR |
Виробник: Alliance Memory
DRAM DDR1, 512Mb, 32M X 16, 2.5V, 60-ball BGA, 200 MHz, Automotive Temp - Tape & Reel
DRAM DDR1, 512Mb, 32M X 16, 2.5V, 60-ball BGA, 200 MHz, Automotive Temp - Tape & Reel
товар відсутній
AS4C32M16D1-5BANTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; -40÷105°C
Memory: 512Mb DRAM
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Operating temperature: -40...105°C
Type of integrated circuit: DRAM memory
Kind of package: reel
Memory organisation: 32Mx16bit
Operating voltage: 2.5V
Mounting: SMD
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; -40÷105°C
Memory: 512Mb DRAM
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Operating temperature: -40...105°C
Type of integrated circuit: DRAM memory
Kind of package: reel
Memory organisation: 32Mx16bit
Operating voltage: 2.5V
Mounting: SMD
кількість в упаковці: 2500 шт
товар відсутній
AS4C32M16D1-5BCN |
Виробник: Alliance Memory
DRAM DDR1, 512Mb, 32M X 16, 2.5V, 60-ball BGA, 200 MHz, Commercial Temp - Tray
DRAM DDR1, 512Mb, 32M X 16, 2.5V, 60-ball BGA, 200 MHz, Commercial Temp - Tray
товар відсутній
AS4C32M16D1-5BCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; 0÷70°C
Memory: 512Mb DRAM
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Operating temperature: 0...70°C
Type of integrated circuit: DRAM memory
Kind of interface: parallel
Kind of package: in-tray
Memory organisation: 32Mx16bit
Operating voltage: 2.5V
Mounting: SMD
кількість в упаковці: 240 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; 0÷70°C
Memory: 512Mb DRAM
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Operating temperature: 0...70°C
Type of integrated circuit: DRAM memory
Kind of interface: parallel
Kind of package: in-tray
Memory organisation: 32Mx16bit
Operating voltage: 2.5V
Mounting: SMD
кількість в упаковці: 240 шт
товар відсутній
AS4C32M16D1-5BCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; 0÷70°C; reel
Memory: 512Mb DRAM
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Operating temperature: 0...70°C
Type of integrated circuit: DRAM memory
Kind of package: reel
Memory organisation: 32Mx16bit
Operating voltage: 2.5V
Mounting: SMD
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; 0÷70°C; reel
Memory: 512Mb DRAM
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Operating temperature: 0...70°C
Type of integrated circuit: DRAM memory
Kind of package: reel
Memory organisation: 32Mx16bit
Operating voltage: 2.5V
Mounting: SMD
кількість в упаковці: 2500 шт
товар відсутній
AS4C32M16D1-5BIN |
Виробник: Alliance Memory
DRAM DDR1, 512Mb, 32M X 16, 2.5V, 60-ball BGA, 200 MHz, Industriall Temp - Tray
DRAM DDR1, 512Mb, 32M X 16, 2.5V, 60-ball BGA, 200 MHz, Industriall Temp - Tray
товар відсутній
AS4C32M16D1-5BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; -40÷95°C
Memory: 512Mb DRAM
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of interface: parallel
Kind of package: in-tray
Memory organisation: 32Mx16bit
Operating voltage: 2.5V
Mounting: SMD
кількість в упаковці: 240 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; -40÷95°C
Memory: 512Mb DRAM
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of interface: parallel
Kind of package: in-tray
Memory organisation: 32Mx16bit
Operating voltage: 2.5V
Mounting: SMD
кількість в упаковці: 240 шт
товар відсутній
AS4C32M16D1-5BINTR |
Виробник: Alliance Memory
DRAM DDR1, 512Mb, 32M X 16, 2.5V, 60-ball BGA, 200 MHz, Industriall Temp, T&R
DRAM DDR1, 512Mb, 32M X 16, 2.5V, 60-ball BGA, 200 MHz, Industriall Temp, T&R
товар відсутній
AS4C32M16D1-5BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; -40÷95°C; reel
Memory: 512Mb DRAM
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of package: reel
Memory organisation: 32Mx16bit
Operating voltage: 2.5V
Mounting: SMD
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; -40÷95°C; reel
Memory: 512Mb DRAM
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of package: reel
Memory organisation: 32Mx16bit
Operating voltage: 2.5V
Mounting: SMD
кількість в упаковці: 2500 шт
товар відсутній
AS4C32M16D1-5TCN |
Виробник: Alliance Memory
DRAM 512Mb, 3.3V, 200Mhz 32M x 16 DDR
DRAM 512Mb, 3.3V, 200Mhz 32M x 16 DDR
на замовлення 1 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 279.46 грн |
10+ | 249.82 грн |
108+ | 189.18 грн |
216+ | 187.75 грн |
540+ | 181.27 грн |
1080+ | 172.64 грн |
2592+ | 164.01 грн |
AS4C32M16D1A-5TAN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; TSOP66 II
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Operating temperature: -40...105°C
Case: TSOP66 II
Kind of package: in-tray
Memory organisation: 32Mx16bit
Type of integrated circuit: DRAM memory
Mounting: SMD
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; TSOP66 II
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Operating temperature: -40...105°C
Case: TSOP66 II
Kind of package: in-tray
Memory organisation: 32Mx16bit
Type of integrated circuit: DRAM memory
Mounting: SMD
Operating voltage: 2.5V
товар відсутній
AS4C32M16D1A-5TANTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; TSOP66 II
Memory: 512Mb DRAM
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Operating temperature: -40...105°C
Type of integrated circuit: DRAM memory
Kind of package: reel
Memory organisation: 32Mx16bit
Operating voltage: 2.5V
Case: TSOP66 II
Mounting: SMD
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; TSOP66 II
Memory: 512Mb DRAM
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Operating temperature: -40...105°C
Type of integrated circuit: DRAM memory
Kind of package: reel
Memory organisation: 32Mx16bit
Operating voltage: 2.5V
Case: TSOP66 II
Mounting: SMD
товар відсутній
AS4C32M16D1A-5TCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 2.5V; 200MHz; TSOP66 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 2.5V; 200MHz; TSOP66 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
товар відсутній
AS4C32M16D1A-5TCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; TSOP66 II
Memory: 512Mb DRAM
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Operating temperature: 0...70°C
Type of integrated circuit: DRAM memory
Kind of package: reel
Memory organisation: 32Mx16bit
Operating voltage: 2.5V
Case: TSOP66 II
Mounting: SMD
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; TSOP66 II
Memory: 512Mb DRAM
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Operating temperature: 0...70°C
Type of integrated circuit: DRAM memory
Kind of package: reel
Memory organisation: 32Mx16bit
Operating voltage: 2.5V
Case: TSOP66 II
Mounting: SMD
товар відсутній
AS4C32M16D1A-5TIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Memory organisation: 32Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Memory organisation: 32Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
на замовлення 325 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 389.75 грн |
4+ | 275.74 грн |
9+ | 260.76 грн |
108+ | 250.27 грн |
AS4C32M16D1A-5TINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; TSOP66 II
Memory: 512Mb DRAM
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of package: reel
Memory organisation: 32Mx16bit
Operating voltage: 2.5V
Case: TSOP66 II
Mounting: SMD
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; TSOP66 II
Memory: 512Mb DRAM
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of package: reel
Memory organisation: 32Mx16bit
Operating voltage: 2.5V
Case: TSOP66 II
Mounting: SMD
товар відсутній
AS4C32M16D1A-5TAN |
Виробник: Alliance Memory
DRAM 512m, 2.5V, 200Mhz 32M x 16 DDR1
DRAM 512m, 2.5V, 200Mhz 32M x 16 DDR1
на замовлення 14 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 495.98 грн |
10+ | 446.71 грн |
25+ | 380.53 грн |
50+ | 377.65 грн |
108+ | 369.02 грн |
216+ | 332.33 грн |
540+ | 329.45 грн |
AS4C32M16D1A-5TAN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; TSOP66 II
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Operating temperature: -40...105°C
Case: TSOP66 II
Kind of package: in-tray
Memory organisation: 32Mx16bit
Type of integrated circuit: DRAM memory
Mounting: SMD
Operating voltage: 2.5V
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; TSOP66 II
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Operating temperature: -40...105°C
Case: TSOP66 II
Kind of package: in-tray
Memory organisation: 32Mx16bit
Type of integrated circuit: DRAM memory
Mounting: SMD
Operating voltage: 2.5V
кількість в упаковці: 1 шт
товар відсутній
AS4C32M16D1A-5TANTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; TSOP66 II
Memory: 512Mb DRAM
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Operating temperature: -40...105°C
Type of integrated circuit: DRAM memory
Kind of package: reel
Memory organisation: 32Mx16bit
Operating voltage: 2.5V
Case: TSOP66 II
Mounting: SMD
кількість в упаковці: 1000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; TSOP66 II
Memory: 512Mb DRAM
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Operating temperature: -40...105°C
Type of integrated circuit: DRAM memory
Kind of package: reel
Memory organisation: 32Mx16bit
Operating voltage: 2.5V
Case: TSOP66 II
Mounting: SMD
кількість в упаковці: 1000 шт
товар відсутній
AS4C32M16D1A-5TCN |
Виробник: Alliance Memory
DRAM DDR1, 512Mb, 32M X 16, 2.5V, 66pin TSOP II, 200 MHz, Commercial Temp A
DRAM DDR1, 512Mb, 32M X 16, 2.5V, 66pin TSOP II, 200 MHz, Commercial Temp A
на замовлення 215 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 344.08 грн |
10+ | 300.29 грн |
108+ | 217.24 грн |
216+ | 214.36 грн |
540+ | 212.92 грн |
1080+ | 210.76 грн |
2592+ | 205.73 грн |
AS4C32M16D1A-5TCN |
Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C32M16D1A-5TCN - DRAM, DDR1, 512 Mbit, 32M x 16 Bit, 200 MHz, TSOP-II, 66 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: DDR1
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: TSOP-II
Speicherdichte: 512Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 2.5V
Taktfrequenz, max.: 200MHz
Betriebstemperatur, min.: 0°C
euEccn: NLR
Anzahl der Pins: 66Pin(s)
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 70°C
Speicherkonfiguration: 32M x 16 Bit
SVHC: No SVHC (14-Jun-2023)
Description: ALLIANCE MEMORY - AS4C32M16D1A-5TCN - DRAM, DDR1, 512 Mbit, 32M x 16 Bit, 200 MHz, TSOP-II, 66 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: DDR1
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: TSOP-II
Speicherdichte: 512Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 2.5V
Taktfrequenz, max.: 200MHz
Betriebstemperatur, min.: 0°C
euEccn: NLR
Anzahl der Pins: 66Pin(s)
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 70°C
Speicherkonfiguration: 32M x 16 Bit
SVHC: No SVHC (14-Jun-2023)
на замовлення 108 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 384.91 грн |
10+ | 305.83 грн |
25+ | 287.27 грн |
50+ | 250.27 грн |
100+ | 215.11 грн |
AS4C32M16D1A-5TCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 2.5V; 200MHz; TSOP66 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 2.5V; 200MHz; TSOP66 II; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
товар відсутній
AS4C32M16D1A-5TCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; TSOP66 II
Memory: 512Mb DRAM
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Operating temperature: 0...70°C
Type of integrated circuit: DRAM memory
Kind of package: reel
Memory organisation: 32Mx16bit
Operating voltage: 2.5V
Case: TSOP66 II
Mounting: SMD
кількість в упаковці: 1000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; TSOP66 II
Memory: 512Mb DRAM
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Operating temperature: 0...70°C
Type of integrated circuit: DRAM memory
Kind of package: reel
Memory organisation: 32Mx16bit
Operating voltage: 2.5V
Case: TSOP66 II
Mounting: SMD
кількість в упаковці: 1000 шт
товар відсутній
AS4C32M16D1A-5TIN |
Виробник: Alliance Memory
DRAM DDR1, 512Mb, 32M X 16, 2.5V, 66pin TSOP II, 200 MHz, Industrial Temp (A)
DRAM DDR1, 512Mb, 32M X 16, 2.5V, 66pin TSOP II, 200 MHz, Industrial Temp (A)
на замовлення 258 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 401.99 грн |
10+ | 349.92 грн |
108+ | 272.63 грн |
216+ | 271.91 грн |
540+ | 248.89 грн |
2592+ | 247.45 грн |
5076+ | 238.1 грн |
AS4C32M16D1A-5TIN |
Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C32M16D1A-5TIN - DRAM, DDR1, 512 Mbit, 32M x 16 Bit, 200 MHz, TSOP-II, 66 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: DDR1
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: TSOP-II
Speicherdichte: 512Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 2.5V
Taktfrequenz, max.: 200MHz
Betriebstemperatur, min.: -40°C
euEccn: NLR
Anzahl der Pins: 66Pin(s)
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 85°C
Speicherkonfiguration: 32M x 16 Bit
SVHC: No SVHC (14-Jun-2023)
Description: ALLIANCE MEMORY - AS4C32M16D1A-5TIN - DRAM, DDR1, 512 Mbit, 32M x 16 Bit, 200 MHz, TSOP-II, 66 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: DDR1
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: TSOP-II
Speicherdichte: 512Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 2.5V
Taktfrequenz, max.: 200MHz
Betriebstemperatur, min.: -40°C
euEccn: NLR
Anzahl der Pins: 66Pin(s)
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 85°C
Speicherkonfiguration: 32M x 16 Bit
SVHC: No SVHC (14-Jun-2023)
на замовлення 436 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 430.1 грн |
10+ | 342.95 грн |
25+ | 330.85 грн |
50+ | 295.23 грн |
100+ | 262.14 грн |
250+ | 251.08 грн |
AS4C32M16D1A-5TIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Memory organisation: 32Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; TSOP66 II
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 512Mb DRAM
Memory organisation: 32Mx16bit
Clock frequency: 200MHz
Case: TSOP66 II
Mounting: SMD
Operating temperature: -40...95°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
кількість в упаковці: 1 шт
на замовлення 325 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 467.7 грн |
4+ | 343.62 грн |
9+ | 312.91 грн |
108+ | 300.32 грн |
AS4C32M16D1A-5TINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; TSOP66 II
Memory: 512Mb DRAM
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of package: reel
Memory organisation: 32Mx16bit
Operating voltage: 2.5V
Case: TSOP66 II
Mounting: SMD
кількість в упаковці: 1000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 2.5V; 200MHz; TSOP66 II
Memory: 512Mb DRAM
Clock frequency: 200MHz
Kind of memory: DDR1; SDRAM
Operating temperature: -40...95°C
Type of integrated circuit: DRAM memory
Kind of package: reel
Memory organisation: 32Mx16bit
Operating voltage: 2.5V
Case: TSOP66 II
Mounting: SMD
кількість в упаковці: 1000 шт
товар відсутній
AS4C32M16D2A-25BAN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 1.8V; 400MHz; 12.5ns; FBGA84; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 400MHz
Access time: 12.5ns
Case: FBGA84
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 1.8V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 1.8V; 400MHz; 12.5ns; FBGA84; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 400MHz
Access time: 12.5ns
Case: FBGA84
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 1.8V
товар відсутній
AS4C32M16D2A-25BANTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 1.8V; 400MHz; 12.5ns; FBGA84; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 400MHz
Access time: 12.5ns
Case: FBGA84
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Operating voltage: 1.8V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 1.8V; 400MHz; 12.5ns; FBGA84; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 400MHz
Access time: 12.5ns
Case: FBGA84
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Operating voltage: 1.8V
товар відсутній
AS4C32M16D2A-25BCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 1.8V; 400MHz; 12.5ns; FBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 512Mb DRAM
Case: FBGA84
Mounting: SMD
Operating temperature: 0...85°C
Operating voltage: 1.8V
Clock frequency: 400MHz
Kind of interface: parallel
Kind of package: in-tray
Access time: 12.5ns
Memory organisation: 32Mx16bit
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 32Mx16bit; 1.8V; 400MHz; 12.5ns; FBGA84
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory: 512Mb DRAM
Case: FBGA84
Mounting: SMD
Operating temperature: 0...85°C
Operating voltage: 1.8V
Clock frequency: 400MHz
Kind of interface: parallel
Kind of package: in-tray
Access time: 12.5ns
Memory organisation: 32Mx16bit
на замовлення 146 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 280.01 грн |
5+ | 212.05 грн |
12+ | 200.06 грн |
100+ | 195.57 грн |
AS4C32M16D2A-25BCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 1.8V; 400MHz; 12.5ns; FBGA84; 0÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 400MHz
Access time: 12.5ns
Case: FBGA84
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...85°C
Kind of package: reel
Operating voltage: 1.8V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 1.8V; 400MHz; 12.5ns; FBGA84; 0÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 400MHz
Access time: 12.5ns
Case: FBGA84
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: 0...85°C
Kind of package: reel
Operating voltage: 1.8V
товар відсутній
AS4C32M16D2A-25BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 1.8V; 400MHz; 12.5ns; FBGA84; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 400MHz
Access time: 12.5ns
Case: FBGA84
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 1.8V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 1.8V; 400MHz; 12.5ns; FBGA84; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 400MHz
Access time: 12.5ns
Case: FBGA84
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 1.8V
товар відсутній
AS4C32M16D2A-25BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 1.8V; 400MHz; 12.5ns; FBGA84; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 400MHz
Access time: 12.5ns
Case: FBGA84
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 1.8V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 1.8V; 400MHz; 12.5ns; FBGA84; -40÷95°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 400MHz
Access time: 12.5ns
Case: FBGA84
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 1.8V
товар відсутній
AS4C32M16D2A-25BAN |
Виробник: Alliance Memory
DRAM
DRAM
на замовлення 178 шт:
термін постачання 21-30 дні (днів)AS4C32M16D2A-25BAN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 1.8V; 400MHz; 12.5ns; FBGA84; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 400MHz
Access time: 12.5ns
Case: FBGA84
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 1.8V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 32Mx16bit; 1.8V; 400MHz; 12.5ns; FBGA84; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR2; SDRAM
Memory organisation: 32Mx16bit
Clock frequency: 400MHz
Access time: 12.5ns
Case: FBGA84
Memory capacity: 512Mb
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 1.8V
товар відсутній