Продукція > ALLIANCE MEMORY > Всі товари виробника ALLIANCE MEMORY (3714) > Сторінка 30 з 62
Фото | Назва | Виробник | Інформація |
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AS6C1616B-45TINTR | Alliance Memory | SRAM |
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AS6C1616B-45TINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 45ns; TSOP48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 45ns Case: TSOP48 Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...3.6V кількість в упаковці: 1500 шт |
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AS6C1616B-55BIN | Alliance Memory | SRAM LP SRAM, 16Mb, 1M x 16, 2.7 - 3.6V, 48 ball TFBGA, 45ns, Industrial Temp - Tray |
на замовлення 170 шт: термін постачання 21-30 дні (днів) |
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AS6C1616B-55BIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 55ns Case: TFBGA48 Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...3.6V кількість в упаковці: 480 шт |
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AS6C1616B-55BINTR | Alliance Memory | SRAM 16Mb, LP SRAM, 1024K x 16, 2.7 - 3.6V, 48ball 6mmx8mm FBGA, 55ns, Industrial Temp, B Die, T&R |
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AS6C1616B-55BINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 55ns Case: TFBGA48 Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...3.6V кількість в упаковці: 1000 шт |
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AS6C1616B-55TINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TSOP48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 55ns Case: TSOP48 Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...3.6V кількість в упаковці: 1500 шт |
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AS6C1616C-45TIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit/2Mx8bit; 2.7÷3.6V; 45ns Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit/2Mx8bit Access time: 45ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating voltage: 2.7...3.6V |
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AS6C1616C-45TINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit/2Mx8bit; 2.7÷3.6V; 45ns Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit/2Mx8bit Access time: 45ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating voltage: 2.7...3.6V |
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AS6C1616C-45TIN | Alliance Memory | SRAM 16Mb 1M x 16 Bit Low Power CMOS SRAM with switchable IO options x16 or x8 Tray |
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AS6C1616C-45TIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit/2Mx8bit; 2.7÷3.6V; 45ns Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit/2Mx8bit Access time: 45ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating voltage: 2.7...3.6V кількість в упаковці: 1 шт |
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AS6C1616C-45TINTR | Alliance Memory | SRAM 16Mb 1M x 16 Bit Low Power CMOS SRAM with switchable IO options x16 or x8 Reel |
на замовлення 1478 шт: термін постачання 21-30 дні (днів) |
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AS6C1616C-45TINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit/2Mx8bit; 2.7÷3.6V; 45ns Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit/2Mx8bit Access time: 45ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating voltage: 2.7...3.6V кількість в упаковці: 1500 шт |
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AS6C2008-55BIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 3÷3.6V; 55ns; TFBGA36 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Access time: 55ns Case: TFBGA36 Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC Operating voltage: 3...3.6V |
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AS6C2008-55BINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 3.3V; 55ns; TFBGA36; parallel Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Access time: 55ns Case: TFBGA36 Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC Operating voltage: 3.3V |
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AS6C2008-55SIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 3÷3.6V; 55ns; SOP32; parallel IC width: 450mils Kind of interface: parallel Memory: 2Mb SRAM Mounting: SMD Case: SOP32 Operating voltage: 3...3.6V Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory organisation: 256kx8bit Access time: 55ns Integrated circuit features: LPC |
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AS6C2008-55SINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 3.3V; 55ns; SOP32; parallel IC width: 450mils Kind of interface: parallel Memory: 2Mb SRAM Mounting: SMD Case: SOP32 Operating voltage: 3.3V Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory organisation: 256kx8bit Access time: 55ns Integrated circuit features: LPC |
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AS6C2008-55STINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 3.3V; 55ns; STSOP32; parallel Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Access time: 55ns Case: STSOP32 Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC Operating voltage: 3.3V |
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AS6C2008-55TIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 3÷3.6V; 55ns; TSOP32; parallel Kind of interface: parallel Memory: 2Mb SRAM Mounting: SMD Case: TSOP32 Operating voltage: 3...3.6V Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory organisation: 256kx8bit Access time: 55ns Integrated circuit features: LPC |
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AS6C2008-55TINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 3.3V; 55ns; TSOP32; parallel Kind of interface: parallel Memory: 2Mb SRAM Mounting: SMD Case: TSOP32 Operating voltage: 3.3V Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory organisation: 256kx8bit Access time: 55ns Integrated circuit features: LPC |
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AS6C2008-55BIN | Alliance Memory | SRAM LP SRAM, 2Mb, 256K x 8, 3V, 36pin TFBGA (6 x 8mm), 55ns, Industrial Temp - Tray |
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AS6C2008-55BIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 3÷3.6V; 55ns; TFBGA36 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Access time: 55ns Case: TFBGA36 Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC Operating voltage: 3...3.6V кількість в упаковці: 480 шт |
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AS6C2008-55BINTR | Alliance Memory | SRAM 2M, 2.7-3.6V, 55ns 256K x 8 Asynch SRAM |
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AS6C2008-55BINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 3.3V; 55ns; TFBGA36; parallel Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Access time: 55ns Case: TFBGA36 Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC Operating voltage: 3.3V кількість в упаковці: 2000 шт |
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AS6C2008-55SIN | Alliance Memory | SRAM LP SRAM, 2Mb, 256K x 8, 3V, 32pin 450 mil SOP, 55ns, Industrial Temp - Tray |
на замовлення 81 шт: термін постачання 21-30 дні (днів) |
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AS6C2008-55SIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 3÷3.6V; 55ns; SOP32; parallel IC width: 450mils Kind of interface: parallel Memory: 2Mb SRAM Mounting: SMD Case: SOP32 Operating voltage: 3...3.6V Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory organisation: 256kx8bit Access time: 55ns Integrated circuit features: LPC кількість в упаковці: 1 шт |
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AS6C2008-55SINTR | Alliance Memory | SRAM 2M, 2.7-3.6V, 55ns 256K x 8 Asynch SRAM |
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AS6C2008-55SINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 3.3V; 55ns; SOP32; parallel IC width: 450mils Kind of interface: parallel Memory: 2Mb SRAM Mounting: SMD Case: SOP32 Operating voltage: 3.3V Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory organisation: 256kx8bit Access time: 55ns Integrated circuit features: LPC кількість в упаковці: 1000 шт |
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AS6C2008-55STIN | Alliance Memory | SRAM 2M, 3.3V, 55ns 256K x 8 Asynch SRAM |
на замовлення 66 шт: термін постачання 21-30 дні (днів) |
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AS6C2008-55STINTR | Alliance Memory | SRAM 2M, 3.3V, 55ns 256K x 8 Asynch SRAM |
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AS6C2008-55STINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 3.3V; 55ns; STSOP32; parallel Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Access time: 55ns Case: STSOP32 Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC Operating voltage: 3.3V кількість в упаковці: 1500 шт |
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AS6C2008-55TIN | Alliance Memory | SRAM 2M, 3.3V, 55ns 256K x 8 Asynch SRAM |
на замовлення 121 шт: термін постачання 21-30 дні (днів) |
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AS6C2008-55TIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 3÷3.6V; 55ns; TSOP32; parallel Kind of interface: parallel Memory: 2Mb SRAM Mounting: SMD Case: TSOP32 Operating voltage: 3...3.6V Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory organisation: 256kx8bit Access time: 55ns Integrated circuit features: LPC кількість в упаковці: 1 шт |
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AS6C2008-55TINTR | Alliance Memory | SRAM 2M, 3.3V, 55ns 256K x 8 Asynch SRAM |
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AS6C2008-55TINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 3.3V; 55ns; TSOP32; parallel Kind of interface: parallel Memory: 2Mb SRAM Mounting: SMD Case: TSOP32 Operating voltage: 3.3V Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory organisation: 256kx8bit Access time: 55ns Integrated circuit features: LPC кількість в упаковці: 1500 шт |
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AS6C2008A-55BIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.7÷5.5V; 55ns; TFBGA36 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Access time: 55ns Case: TFBGA36 Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...5.5V |
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AS6C2008A-55BINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.7÷5.5V; 55ns; TFBGA36 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Access time: 55ns Case: TFBGA36 Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...5.5V |
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AS6C2008A-55SIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.7÷5.5V; 55ns; SOP32; 450mils Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Access time: 55ns Case: SOP32 Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC IC width: 450mils Operating voltage: 2.7...5.5V |
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AS6C2008A-55SINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.7÷5.5V; 55ns; SOP32; 450mils Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Access time: 55ns Case: SOP32 Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC IC width: 450mils Operating voltage: 2.7...5.5V |
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AS6C2008A-55STIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.7÷5.5V; 55ns; STSOP32 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Access time: 55ns Case: STSOP32 Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...5.5V |
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AS6C2008A-55STINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.7÷5.5V; 55ns; STSOP32 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Access time: 55ns Case: STSOP32 Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...5.5V |
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AS6C2008A-55TIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.7÷5.5V; 55ns; TSOP32 Type of integrated circuit: SRAM memory Case: TSOP32 Mounting: SMD Kind of interface: parallel Memory: 2Mb SRAM Operating voltage: 2.7...5.5V Kind of memory: asynchronous; SRAM Memory organisation: 256kx8bit Access time: 55ns Integrated circuit features: LPC |
на замовлення 102 шт: термін постачання 21-30 дні (днів) |
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AS6C2008A-55TINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.7÷5.5V; 55ns; TSOP32 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Access time: 55ns Case: TSOP32 Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...5.5V |
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AS6C2008A-55BIN | Alliance Memory | SRAM 2M 2.7-3.6V 55ns 256Kx8 LP Async SRAM |
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AS6C2008A-55BIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.7÷5.5V; 55ns; TFBGA36 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Access time: 55ns Case: TFBGA36 Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...5.5V кількість в упаковці: 480 шт |
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AS6C2008A-55BINTR | Alliance Memory | SRAM 2M 2.7-3.6V 55ns 256Kx8 LP Async SRAM |
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AS6C2008A-55BINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.7÷5.5V; 55ns; TFBGA36 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Access time: 55ns Case: TFBGA36 Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...5.5V кількість в упаковці: 2000 шт |
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AS6C2008A-55SIN | Alliance Memory | SRAM 2M, 3.3V, 55ns 256K x 8 Asynch SRAM |
на замовлення 38 шт: термін постачання 21-30 дні (днів) |
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AS6C2008A-55SIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.7÷5.5V; 55ns; SOP32; 450mils Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Access time: 55ns Case: SOP32 Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC IC width: 450mils Operating voltage: 2.7...5.5V кількість в упаковці: 1 шт |
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AS6C2008A-55SINTR | Alliance Memory | SRAM 2M, 3.3V, 55ns 256K x 8 Asynch SRAM |
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AS6C2008A-55SINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.7÷5.5V; 55ns; SOP32; 450mils Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Access time: 55ns Case: SOP32 Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC IC width: 450mils Operating voltage: 2.7...5.5V кількість в упаковці: 1000 шт |
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AS6C2008A-55STIN | Alliance Memory | SRAM 2M, 3.3V, 55ns 256K x 8 Asynch SRAM |
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AS6C2008A-55STIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.7÷5.5V; 55ns; STSOP32 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Access time: 55ns Case: STSOP32 Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...5.5V кількість в упаковці: 1 шт |
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AS6C2008A-55STINTR | Alliance Memory | SRAM 2M, 3.3V, 55ns 256K x 8 Asynch SRAM |
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AS6C2008A-55STINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.7÷5.5V; 55ns; STSOP32 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Access time: 55ns Case: STSOP32 Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...5.5V кількість в упаковці: 1500 шт |
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AS6C2008A-55TIN | Alliance Memory | SRAM 2M, 3.3V, 55ns 256K x 8 Asynch SRAM |
на замовлення 37 шт: термін постачання 21-30 дні (днів) |
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AS6C2008A-55TIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.7÷5.5V; 55ns; TSOP32 Type of integrated circuit: SRAM memory Case: TSOP32 Mounting: SMD Kind of interface: parallel Memory: 2Mb SRAM Operating voltage: 2.7...5.5V Kind of memory: asynchronous; SRAM Memory organisation: 256kx8bit Access time: 55ns Integrated circuit features: LPC кількість в упаковці: 1 шт |
на замовлення 102 шт: термін постачання 14-21 дні (днів) |
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AS6C2008A-55TINTR | Alliance Memory | SRAM 2M, 3.3V, 55ns 256K x 8 Asynch SRAM |
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AS6C2008A-55TINTR | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.7÷5.5V; 55ns; TSOP32 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Access time: 55ns Case: TSOP32 Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC Operating voltage: 2.7...5.5V кількість в упаковці: 1500 шт |
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AS6C2016-55ZIN | ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.7÷5.5V; 55ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 128kx16bit Access time: 55ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Integrated circuit features: LPC; synchronous Operating voltage: 2.7...5.5V |
товар відсутній |
AS6C1616B-45TINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 45ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 45ns
Case: TSOP48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
кількість в упаковці: 1500 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 45ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 45ns
Case: TSOP48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
кількість в упаковці: 1500 шт
товар відсутній
AS6C1616B-55BIN |
Виробник: Alliance Memory
SRAM LP SRAM, 16Mb, 1M x 16, 2.7 - 3.6V, 48 ball TFBGA, 45ns, Industrial Temp - Tray
SRAM LP SRAM, 16Mb, 1M x 16, 2.7 - 3.6V, 48 ball TFBGA, 45ns, Industrial Temp - Tray
на замовлення 170 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 863.56 грн |
10+ | 788.35 грн |
25+ | 670.42 грн |
100+ | 586.98 грн |
250+ | 563.24 грн |
480+ | 551.01 грн |
960+ | 540.94 грн |
AS6C1616B-55BIN |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TFBGA48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
кількість в упаковці: 480 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TFBGA48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
кількість в упаковці: 480 шт
товар відсутній
AS6C1616B-55BINTR |
Виробник: Alliance Memory
SRAM 16Mb, LP SRAM, 1024K x 16, 2.7 - 3.6V, 48ball 6mmx8mm FBGA, 55ns, Industrial Temp, B Die, T&R
SRAM 16Mb, LP SRAM, 1024K x 16, 2.7 - 3.6V, 48ball 6mmx8mm FBGA, 55ns, Industrial Temp, B Die, T&R
товар відсутній
AS6C1616B-55BINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TFBGA48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
кількість в упаковці: 1000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TFBGA48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
кількість в упаковці: 1000 шт
товар відсутній
AS6C1616B-55TINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TSOP48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
кількість в упаковці: 1500 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.7÷3.6V; 55ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 55ns
Case: TSOP48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
кількість в упаковці: 1500 шт
товар відсутній
AS6C1616C-45TIN |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit/2Mx8bit; 2.7÷3.6V; 45ns
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit/2Mx8bit
Access time: 45ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating voltage: 2.7...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit/2Mx8bit; 2.7÷3.6V; 45ns
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit/2Mx8bit
Access time: 45ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating voltage: 2.7...3.6V
товар відсутній
AS6C1616C-45TINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit/2Mx8bit; 2.7÷3.6V; 45ns
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit/2Mx8bit
Access time: 45ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating voltage: 2.7...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit/2Mx8bit; 2.7÷3.6V; 45ns
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit/2Mx8bit
Access time: 45ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating voltage: 2.7...3.6V
товар відсутній
AS6C1616C-45TIN |
Виробник: Alliance Memory
SRAM 16Mb 1M x 16 Bit Low Power CMOS SRAM with switchable IO options x16 or x8 Tray
SRAM 16Mb 1M x 16 Bit Low Power CMOS SRAM with switchable IO options x16 or x8 Tray
товар відсутній
AS6C1616C-45TIN |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit/2Mx8bit; 2.7÷3.6V; 45ns
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit/2Mx8bit
Access time: 45ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating voltage: 2.7...3.6V
кількість в упаковці: 1 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit/2Mx8bit; 2.7÷3.6V; 45ns
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit/2Mx8bit
Access time: 45ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating voltage: 2.7...3.6V
кількість в упаковці: 1 шт
товар відсутній
AS6C1616C-45TINTR |
Виробник: Alliance Memory
SRAM 16Mb 1M x 16 Bit Low Power CMOS SRAM with switchable IO options x16 or x8 Reel
SRAM 16Mb 1M x 16 Bit Low Power CMOS SRAM with switchable IO options x16 or x8 Reel
на замовлення 1478 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 920.63 грн |
10+ | 840.47 грн |
25+ | 714.3 грн |
100+ | 625.82 грн |
250+ | 594.89 грн |
500+ | 588.41 грн |
1000+ | 568.99 грн |
AS6C1616C-45TINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit/2Mx8bit; 2.7÷3.6V; 45ns
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit/2Mx8bit
Access time: 45ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating voltage: 2.7...3.6V
кількість в упаковці: 1500 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit/2Mx8bit; 2.7÷3.6V; 45ns
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit/2Mx8bit
Access time: 45ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating voltage: 2.7...3.6V
кількість в упаковці: 1500 шт
товар відсутній
AS6C2008-55BIN |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 3÷3.6V; 55ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 55ns
Case: TFBGA36
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 3...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 3÷3.6V; 55ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 55ns
Case: TFBGA36
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 3...3.6V
товар відсутній
AS6C2008-55BINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 3.3V; 55ns; TFBGA36; parallel
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 55ns
Case: TFBGA36
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 3.3V; 55ns; TFBGA36; parallel
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 55ns
Case: TFBGA36
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 3.3V
товар відсутній
AS6C2008-55SIN |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 3÷3.6V; 55ns; SOP32; parallel
IC width: 450mils
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
Case: SOP32
Operating voltage: 3...3.6V
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory organisation: 256kx8bit
Access time: 55ns
Integrated circuit features: LPC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 3÷3.6V; 55ns; SOP32; parallel
IC width: 450mils
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
Case: SOP32
Operating voltage: 3...3.6V
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory organisation: 256kx8bit
Access time: 55ns
Integrated circuit features: LPC
товар відсутній
AS6C2008-55SINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 3.3V; 55ns; SOP32; parallel
IC width: 450mils
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
Case: SOP32
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory organisation: 256kx8bit
Access time: 55ns
Integrated circuit features: LPC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 3.3V; 55ns; SOP32; parallel
IC width: 450mils
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
Case: SOP32
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory organisation: 256kx8bit
Access time: 55ns
Integrated circuit features: LPC
товар відсутній
AS6C2008-55STINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 3.3V; 55ns; STSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 55ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 3.3V; 55ns; STSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 55ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 3.3V
товар відсутній
AS6C2008-55TIN |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 3÷3.6V; 55ns; TSOP32; parallel
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
Case: TSOP32
Operating voltage: 3...3.6V
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory organisation: 256kx8bit
Access time: 55ns
Integrated circuit features: LPC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 3÷3.6V; 55ns; TSOP32; parallel
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
Case: TSOP32
Operating voltage: 3...3.6V
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory organisation: 256kx8bit
Access time: 55ns
Integrated circuit features: LPC
товар відсутній
AS6C2008-55TINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 3.3V; 55ns; TSOP32; parallel
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
Case: TSOP32
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory organisation: 256kx8bit
Access time: 55ns
Integrated circuit features: LPC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 3.3V; 55ns; TSOP32; parallel
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
Case: TSOP32
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory organisation: 256kx8bit
Access time: 55ns
Integrated circuit features: LPC
товар відсутній
AS6C2008-55BIN |
Виробник: Alliance Memory
SRAM LP SRAM, 2Mb, 256K x 8, 3V, 36pin TFBGA (6 x 8mm), 55ns, Industrial Temp - Tray
SRAM LP SRAM, 2Mb, 256K x 8, 3V, 36pin TFBGA (6 x 8mm), 55ns, Industrial Temp - Tray
товар відсутній
AS6C2008-55BIN |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 3÷3.6V; 55ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 55ns
Case: TFBGA36
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 3...3.6V
кількість в упаковці: 480 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 3÷3.6V; 55ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 55ns
Case: TFBGA36
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 3...3.6V
кількість в упаковці: 480 шт
товар відсутній
AS6C2008-55BINTR |
Виробник: Alliance Memory
SRAM 2M, 2.7-3.6V, 55ns 256K x 8 Asynch SRAM
SRAM 2M, 2.7-3.6V, 55ns 256K x 8 Asynch SRAM
товар відсутній
AS6C2008-55BINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 3.3V; 55ns; TFBGA36; parallel
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 55ns
Case: TFBGA36
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 3.3V
кількість в упаковці: 2000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 3.3V; 55ns; TFBGA36; parallel
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 55ns
Case: TFBGA36
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 3.3V
кількість в упаковці: 2000 шт
товар відсутній
AS6C2008-55SIN |
Виробник: Alliance Memory
SRAM LP SRAM, 2Mb, 256K x 8, 3V, 32pin 450 mil SOP, 55ns, Industrial Temp - Tray
SRAM LP SRAM, 2Mb, 256K x 8, 3V, 32pin 450 mil SOP, 55ns, Industrial Temp - Tray
на замовлення 81 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 303.8 грн |
10+ | 281.26 грн |
72+ | 207.17 грн |
1008+ | 205.73 грн |
2520+ | 203.57 грн |
5040+ | 197.1 грн |
10008+ | 195.66 грн |
AS6C2008-55SIN |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 3÷3.6V; 55ns; SOP32; parallel
IC width: 450mils
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
Case: SOP32
Operating voltage: 3...3.6V
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory organisation: 256kx8bit
Access time: 55ns
Integrated circuit features: LPC
кількість в упаковці: 1 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 3÷3.6V; 55ns; SOP32; parallel
IC width: 450mils
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
Case: SOP32
Operating voltage: 3...3.6V
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory organisation: 256kx8bit
Access time: 55ns
Integrated circuit features: LPC
кількість в упаковці: 1 шт
товар відсутній
AS6C2008-55SINTR |
Виробник: Alliance Memory
SRAM 2M, 2.7-3.6V, 55ns 256K x 8 Asynch SRAM
SRAM 2M, 2.7-3.6V, 55ns 256K x 8 Asynch SRAM
товар відсутній
AS6C2008-55SINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 3.3V; 55ns; SOP32; parallel
IC width: 450mils
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
Case: SOP32
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory organisation: 256kx8bit
Access time: 55ns
Integrated circuit features: LPC
кількість в упаковці: 1000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 3.3V; 55ns; SOP32; parallel
IC width: 450mils
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
Case: SOP32
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory organisation: 256kx8bit
Access time: 55ns
Integrated circuit features: LPC
кількість в упаковці: 1000 шт
товар відсутній
AS6C2008-55STIN |
Виробник: Alliance Memory
SRAM 2M, 3.3V, 55ns 256K x 8 Asynch SRAM
SRAM 2M, 3.3V, 55ns 256K x 8 Asynch SRAM
на замовлення 66 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 303.8 грн |
10+ | 271.33 грн |
100+ | 223.71 грн |
234+ | 189.18 грн |
5148+ | 186.31 грн |
10062+ | 183.43 грн |
AS6C2008-55STINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 3.3V; 55ns; STSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 55ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 3.3V
кількість в упаковці: 1500 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 3.3V; 55ns; STSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 55ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 3.3V
кількість в упаковці: 1500 шт
товар відсутній
AS6C2008-55TIN |
Виробник: Alliance Memory
SRAM 2M, 3.3V, 55ns 256K x 8 Asynch SRAM
SRAM 2M, 3.3V, 55ns 256K x 8 Asynch SRAM
на замовлення 121 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 303.8 грн |
10+ | 271.33 грн |
100+ | 210.76 грн |
250+ | 203.57 грн |
468+ | 199.26 грн |
1092+ | 194.22 грн |
2652+ | 189.18 грн |
AS6C2008-55TIN |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 3÷3.6V; 55ns; TSOP32; parallel
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
Case: TSOP32
Operating voltage: 3...3.6V
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory organisation: 256kx8bit
Access time: 55ns
Integrated circuit features: LPC
кількість в упаковці: 1 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 3÷3.6V; 55ns; TSOP32; parallel
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
Case: TSOP32
Operating voltage: 3...3.6V
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory organisation: 256kx8bit
Access time: 55ns
Integrated circuit features: LPC
кількість в упаковці: 1 шт
товар відсутній
AS6C2008-55TINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 3.3V; 55ns; TSOP32; parallel
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
Case: TSOP32
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory organisation: 256kx8bit
Access time: 55ns
Integrated circuit features: LPC
кількість в упаковці: 1500 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 3.3V; 55ns; TSOP32; parallel
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
Case: TSOP32
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory organisation: 256kx8bit
Access time: 55ns
Integrated circuit features: LPC
кількість в упаковці: 1500 шт
товар відсутній
AS6C2008A-55BIN |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.7÷5.5V; 55ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 55ns
Case: TFBGA36
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...5.5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.7÷5.5V; 55ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 55ns
Case: TFBGA36
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...5.5V
товар відсутній
AS6C2008A-55BINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.7÷5.5V; 55ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 55ns
Case: TFBGA36
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...5.5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.7÷5.5V; 55ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 55ns
Case: TFBGA36
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...5.5V
товар відсутній
AS6C2008A-55SIN |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.7÷5.5V; 55ns; SOP32; 450mils
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 55ns
Case: SOP32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
IC width: 450mils
Operating voltage: 2.7...5.5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.7÷5.5V; 55ns; SOP32; 450mils
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 55ns
Case: SOP32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
IC width: 450mils
Operating voltage: 2.7...5.5V
товар відсутній
AS6C2008A-55SINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.7÷5.5V; 55ns; SOP32; 450mils
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 55ns
Case: SOP32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
IC width: 450mils
Operating voltage: 2.7...5.5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.7÷5.5V; 55ns; SOP32; 450mils
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 55ns
Case: SOP32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
IC width: 450mils
Operating voltage: 2.7...5.5V
товар відсутній
AS6C2008A-55STIN |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.7÷5.5V; 55ns; STSOP32
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 55ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...5.5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.7÷5.5V; 55ns; STSOP32
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 55ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...5.5V
товар відсутній
AS6C2008A-55STINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.7÷5.5V; 55ns; STSOP32
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 55ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...5.5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.7÷5.5V; 55ns; STSOP32
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 55ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...5.5V
товар відсутній
AS6C2008A-55TIN |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.7÷5.5V; 55ns; TSOP32
Type of integrated circuit: SRAM memory
Case: TSOP32
Mounting: SMD
Kind of interface: parallel
Memory: 2Mb SRAM
Operating voltage: 2.7...5.5V
Kind of memory: asynchronous; SRAM
Memory organisation: 256kx8bit
Access time: 55ns
Integrated circuit features: LPC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.7÷5.5V; 55ns; TSOP32
Type of integrated circuit: SRAM memory
Case: TSOP32
Mounting: SMD
Kind of interface: parallel
Memory: 2Mb SRAM
Operating voltage: 2.7...5.5V
Kind of memory: asynchronous; SRAM
Memory organisation: 256kx8bit
Access time: 55ns
Integrated circuit features: LPC
на замовлення 102 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 293.73 грн |
5+ | 201.56 грн |
12+ | 190.32 грн |
100+ | 182.83 грн |
AS6C2008A-55TINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.7÷5.5V; 55ns; TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 55ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...5.5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.7÷5.5V; 55ns; TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 55ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...5.5V
товар відсутній
AS6C2008A-55BIN |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.7÷5.5V; 55ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 55ns
Case: TFBGA36
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...5.5V
кількість в упаковці: 480 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.7÷5.5V; 55ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 55ns
Case: TFBGA36
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...5.5V
кількість в упаковці: 480 шт
товар відсутній
AS6C2008A-55BINTR |
Виробник: Alliance Memory
SRAM 2M 2.7-3.6V 55ns 256Kx8 LP Async SRAM
SRAM 2M 2.7-3.6V 55ns 256Kx8 LP Async SRAM
товар відсутній
AS6C2008A-55BINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.7÷5.5V; 55ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 55ns
Case: TFBGA36
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...5.5V
кількість в упаковці: 2000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.7÷5.5V; 55ns; TFBGA36
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 55ns
Case: TFBGA36
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...5.5V
кількість в упаковці: 2000 шт
товар відсутній
AS6C2008A-55SIN |
Виробник: Alliance Memory
SRAM 2M, 3.3V, 55ns 256K x 8 Asynch SRAM
SRAM 2M, 3.3V, 55ns 256K x 8 Asynch SRAM
на замовлення 38 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 303.8 грн |
10+ | 258.1 грн |
72+ | 210.05 грн |
288+ | 207.89 грн |
504+ | 203.57 грн |
1008+ | 198.54 грн |
2520+ | 194.94 грн |
AS6C2008A-55SIN |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.7÷5.5V; 55ns; SOP32; 450mils
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 55ns
Case: SOP32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
IC width: 450mils
Operating voltage: 2.7...5.5V
кількість в упаковці: 1 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.7÷5.5V; 55ns; SOP32; 450mils
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 55ns
Case: SOP32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
IC width: 450mils
Operating voltage: 2.7...5.5V
кількість в упаковці: 1 шт
товар відсутній
AS6C2008A-55SINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.7÷5.5V; 55ns; SOP32; 450mils
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 55ns
Case: SOP32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
IC width: 450mils
Operating voltage: 2.7...5.5V
кількість в упаковці: 1000 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.7÷5.5V; 55ns; SOP32; 450mils
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 55ns
Case: SOP32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
IC width: 450mils
Operating voltage: 2.7...5.5V
кількість в упаковці: 1000 шт
товар відсутній
AS6C2008A-55STIN |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.7÷5.5V; 55ns; STSOP32
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 55ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...5.5V
кількість в упаковці: 1 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.7÷5.5V; 55ns; STSOP32
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 55ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...5.5V
кількість в упаковці: 1 шт
товар відсутній
AS6C2008A-55STINTR |
Виробник: Alliance Memory
SRAM 2M, 3.3V, 55ns 256K x 8 Asynch SRAM
SRAM 2M, 3.3V, 55ns 256K x 8 Asynch SRAM
товар відсутній
AS6C2008A-55STINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.7÷5.5V; 55ns; STSOP32
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 55ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...5.5V
кількість в упаковці: 1500 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.7÷5.5V; 55ns; STSOP32
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 55ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...5.5V
кількість в упаковці: 1500 шт
товар відсутній
AS6C2008A-55TIN |
Виробник: Alliance Memory
SRAM 2M, 3.3V, 55ns 256K x 8 Asynch SRAM
SRAM 2M, 3.3V, 55ns 256K x 8 Asynch SRAM
на замовлення 37 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 303.8 грн |
10+ | 271.33 грн |
100+ | 203.57 грн |
250+ | 201.41 грн |
468+ | 196.38 грн |
1092+ | 192.78 грн |
2652+ | 190.62 грн |
AS6C2008A-55TIN |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.7÷5.5V; 55ns; TSOP32
Type of integrated circuit: SRAM memory
Case: TSOP32
Mounting: SMD
Kind of interface: parallel
Memory: 2Mb SRAM
Operating voltage: 2.7...5.5V
Kind of memory: asynchronous; SRAM
Memory organisation: 256kx8bit
Access time: 55ns
Integrated circuit features: LPC
кількість в упаковці: 1 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.7÷5.5V; 55ns; TSOP32
Type of integrated circuit: SRAM memory
Case: TSOP32
Mounting: SMD
Kind of interface: parallel
Memory: 2Mb SRAM
Operating voltage: 2.7...5.5V
Kind of memory: asynchronous; SRAM
Memory organisation: 256kx8bit
Access time: 55ns
Integrated circuit features: LPC
кількість в упаковці: 1 шт
на замовлення 102 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 352.47 грн |
5+ | 251.18 грн |
12+ | 228.39 грн |
100+ | 219.4 грн |
AS6C2008A-55TINTR |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.7÷5.5V; 55ns; TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 55ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...5.5V
кількість в упаковці: 1500 шт
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.7÷5.5V; 55ns; TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Access time: 55ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...5.5V
кількість в упаковці: 1500 шт
товар відсутній
AS6C2016-55ZIN |
Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.7÷5.5V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC; synchronous
Operating voltage: 2.7...5.5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.7÷5.5V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Integrated circuit features: LPC; synchronous
Operating voltage: 2.7...5.5V
товар відсутній