Продукція > ALLIANCE MEMORY > Всі товари виробника ALLIANCE MEMORY (3685) > Сторінка 18 з 62
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AS4C4M32D1A-5BCNTR | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 128Mb DRAM Memory organisation: 4Mx32bit Clock frequency: 200MHz Access time: 15ns Case: BGA144 Mounting: SMD Operating temperature: 0...70°C Kind of package: reel Operating voltage: 2.5V |
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AS4C4M32D1A-5BIN | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 128Mb DRAM Memory organisation: 4Mx32bit Clock frequency: 200MHz Access time: 15ns Case: BGA144 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V |
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AS4C4M32D1A-5BINTR | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 128Mb DRAM Memory organisation: 4Mx32bit Clock frequency: 200MHz Access time: 15ns Case: BGA144 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel Operating voltage: 2.5V |
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AS4C4M32D1A-5BCN | Alliance Memory |
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AS4C4M32D1A-5BCN | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 128Mb DRAM Memory organisation: 4Mx32bit Clock frequency: 200MHz Access time: 15ns Case: BGA144 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V кількість в упаковці: 189 шт |
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AS4C4M32D1A-5BCNTR | Alliance Memory |
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AS4C4M32D1A-5BCNTR | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 128Mb DRAM Memory organisation: 4Mx32bit Clock frequency: 200MHz Access time: 15ns Case: BGA144 Mounting: SMD Operating temperature: 0...70°C Kind of package: reel Operating voltage: 2.5V кількість в упаковці: 1500 шт |
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AS4C4M32D1A-5BIN | Alliance Memory |
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на замовлення 24 шт: термін постачання 21-30 дні (днів) |
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AS4C4M32D1A-5BIN | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 128Mb DRAM Memory organisation: 4Mx32bit Clock frequency: 200MHz Access time: 15ns Case: BGA144 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 2.5V кількість в упаковці: 189 шт |
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AS4C4M32D1A-5BINTR | Alliance Memory |
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AS4C4M32D1A-5BINTR | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 128Mb DRAM Memory organisation: 4Mx32bit Clock frequency: 200MHz Access time: 15ns Case: BGA144 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel Operating voltage: 2.5V кількість в упаковці: 1500 шт |
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AS4C4M32MSA-6BIN | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 4Mx32bit; 1.7V; 166MHz; 5.5ns; FBGA90; -40÷85°C Case: FBGA90 Operating temperature: -40...85°C Mounting: SMD Access time: 5.5ns Kind of package: in-tray Kind of memory: DDR1; SDRAM Kind of interface: parallel Memory capacity: 128Mb Clock frequency: 166MHz Operating voltage: 1.7V Type of integrated circuit: DRAM memory Memory organisation: 4Mx32bit |
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AS4C4M32MSA-6BINTR | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 4Mx32bit; 1.7V; 166MHz; 5.5ns; FBGA90; -40÷85°C Case: FBGA90 Operating temperature: -40...85°C Mounting: SMD Access time: 5.5ns Kind of package: in-tray Kind of memory: DDR1; SDRAM Kind of interface: parallel Memory capacity: 128Mb Clock frequency: 166MHz Operating voltage: 1.7V Type of integrated circuit: DRAM memory Memory organisation: 4Mx32bit |
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AS4C4M32MSA-6BIN | Alliance Memory |
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AS4C4M32MSA-6BINTR | Alliance Memory |
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AS4C4M32S-6BIN | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 4Mx32bit; 3÷3.6V; 166MHz; 6.5ns; TFBGA90; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx32bit Clock frequency: 166MHz Access time: 6.5ns Case: TFBGA90 Memory capacity: 128Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Operating voltage: 3...3.6V |
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AS4C4M32S-6BINTR | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 1Mx32bitx4; 3.3V; 166MHz; 5.4ns; FBGA90; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 1Mx32bitx4 Clock frequency: 166MHz Access time: 5.4ns Case: FBGA90 Memory capacity: 128Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: reel Operating voltage: 3.3V |
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AS4C4M32S-7BCN | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 4Mx32bit; 3÷3.6V; 143MHz; 6.5ns; TFBGA90; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx32bit Clock frequency: 143MHz Access time: 6.5ns Case: TFBGA90 Memory capacity: 128Mb Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Operating voltage: 3...3.6V |
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AS4C4M32S-7BCNTR | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 1Mx32bitx4; 3.3V; 143MHz; 5.4ns; FBGA90; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 1Mx32bitx4 Clock frequency: 143MHz Access time: 5.4ns Case: FBGA90 Memory capacity: 128Mb Mounting: SMD Operating temperature: 0...70°C Kind of package: reel Operating voltage: 3.3V |
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AS4C4M32S-6BCN | Alliance Memory |
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AS4C4M32S-6BIN | Alliance Memory |
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на замовлення 1206 шт: термін постачання 21-30 дні (днів) |
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AS4C4M32S-6BIN | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 4Mx32bit; 3÷3.6V; 166MHz; 6.5ns; TFBGA90; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx32bit Clock frequency: 166MHz Access time: 6.5ns Case: TFBGA90 Memory capacity: 128Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Operating voltage: 3...3.6V |
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AS4C4M32S-6BIN | Alliance Memory |
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на замовлення 1 шт: термін постачання 3-4 дні (днів) |
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AS4C4M32S-6BINTR | Alliance Memory |
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AS4C4M32S-6BINTR | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 1Mx32bitx4; 3.3V; 166MHz; 5.4ns; FBGA90; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 1Mx32bitx4 Clock frequency: 166MHz Access time: 5.4ns Case: FBGA90 Memory capacity: 128Mb Mounting: SMD Operating temperature: -40...85°C Kind of package: reel Operating voltage: 3.3V |
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AS4C4M32S-7BCN | Alliance Memory |
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на замовлення 327 шт: термін постачання 21-30 дні (днів) |
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AS4C4M32S-7BCN | ALLIANCE MEMORY |
![]() tariffCode: 85423231 DRAM-Ausführung: SDRAM rohsCompliant: YES IC-Montage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES IC-Gehäuse / Bauform: TFBGA Speicherdichte: 128Mbit usEccn: EAR99 Versorgungsspannung, nom.: 3.3V Taktfrequenz, max.: 143MHz Betriebstemperatur, min.: 0°C euEccn: NLR Anzahl der Pins: 90Pin(s) Produktpalette: - productTraceability: No Betriebstemperatur, max.: 70°C Speicherkonfiguration: 4M x 32 Bit SVHC: No SVHC (14-Jun-2023) |
на замовлення 180 шт: термін постачання 21-31 дні (днів) |
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AS4C4M32S-7BCN | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 4Mx32bit; 3÷3.6V; 143MHz; 6.5ns; TFBGA90; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx32bit Clock frequency: 143MHz Access time: 6.5ns Case: TFBGA90 Memory capacity: 128Mb Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Operating voltage: 3...3.6V |
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AS4C4M32S-7BCNTR | Alliance Memory |
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AS4C4M32S-7BCNTR | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 1Mx32bitx4; 3.3V; 143MHz; 5.4ns; FBGA90; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 1Mx32bitx4 Clock frequency: 143MHz Access time: 5.4ns Case: FBGA90 Memory capacity: 128Mb Mounting: SMD Operating temperature: 0...70°C Kind of package: reel Operating voltage: 3.3V |
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AS4C4M32S-7TCN | Alliance Memory |
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на замовлення 421 шт: термін постачання 21-30 дні (днів) |
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AS4C4M32SA-6TCN | ALLIANCE MEMORY |
![]() ![]() Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 3.3V; 166MHz; 5.4ns; TSOP86 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 128Mb DRAM Memory organisation: 1Mx32bitx4 Clock frequency: 166MHz Access time: 5.4ns Case: TSOP86 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 3.3V |
на замовлення 60 шт: термін постачання 21-30 дні (днів) |
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AS4C4M32SA-6TCNTR | ALLIANCE MEMORY |
![]() ![]() Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 3.3V; 166MHz; 5.4ns; TSOP86 Mounting: SMD Case: TSOP86 Kind of package: reel Operating temperature: 0...70°C Kind of interface: parallel Memory: 128Mb DRAM Operating voltage: 3.3V Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 1Mx32bitx4 Access time: 5.4ns Clock frequency: 166MHz |
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AS4C4M32SA-6TINTR | ALLIANCE MEMORY |
![]() ![]() Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 3.3V; 166MHz; 5.4ns; TSOP86 Mounting: SMD Case: TSOP86 Kind of package: reel Operating temperature: -40...85°C Kind of interface: parallel Memory: 128Mb DRAM Operating voltage: 3.3V Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 1Mx32bitx4 Access time: 5.4ns Clock frequency: 166MHz |
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AS4C4M32SA-7TCNTR | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 1Mx32bitx4; 3.3V; 143MHz; 5.4ns; TSOP86; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 1Mx32bitx4 Clock frequency: 143MHz Access time: 5.4ns Case: TSOP86 Memory capacity: 128Mb Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel Operating voltage: 3.3V |
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AS4C4M32SA-6TCN | Alliance Memory |
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на замовлення 64 шт: термін постачання 21-30 дні (днів) |
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AS4C4M32SA-6TCN | ALLIANCE MEMORY |
![]() ![]() Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 3.3V; 166MHz; 5.4ns; TSOP86 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 128Mb DRAM Memory organisation: 1Mx32bitx4 Clock frequency: 166MHz Access time: 5.4ns Case: TSOP86 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 3.3V кількість в упаковці: 1 шт |
на замовлення 60 шт: термін постачання 14-21 дні (днів) |
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AS4C4M32SA-6TCNTR | Alliance Memory |
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AS4C4M32SA-6TCNTR | ALLIANCE MEMORY |
![]() ![]() Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 3.3V; 166MHz; 5.4ns; TSOP86 Mounting: SMD Case: TSOP86 Kind of package: reel Operating temperature: 0...70°C Kind of interface: parallel Memory: 128Mb DRAM Operating voltage: 3.3V Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 1Mx32bitx4 Access time: 5.4ns Clock frequency: 166MHz кількість в упаковці: 1000 шт |
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AS4C4M32SA-6TIN | ALLIANCE MEMORY |
![]() tariffCode: 85423231 DRAM-Ausführung: SDRAM rohsCompliant: YES IC-Montage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES IC-Gehäuse / Bauform: TSOP-II Speicherdichte: 128Mbit usEccn: EAR99 Versorgungsspannung, nom.: 3.3V Taktfrequenz, max.: 166MHz Betriebstemperatur, min.: -40°C euEccn: NLR Anzahl der Pins: 86Pin(s) Produktpalette: - productTraceability: No Betriebstemperatur, max.: 85°C Speicherkonfiguration: 4M x 32 Bit SVHC: No SVHC (14-Jun-2023) |
на замовлення 22 шт: термін постачання 21-31 дні (днів) |
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AS4C4M32SA-6TIN | Alliance Memory |
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на замовлення 838 шт: термін постачання 21-30 дні (днів) |
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AS4C4M32SA-6TINTR | Alliance Memory |
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на замовлення 800 шт: термін постачання 21-30 дні (днів) |
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AS4C4M32SA-6TINTR | ALLIANCE MEMORY |
![]() ![]() Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 3.3V; 166MHz; 5.4ns; TSOP86 Mounting: SMD Case: TSOP86 Kind of package: reel Operating temperature: -40...85°C Kind of interface: parallel Memory: 128Mb DRAM Operating voltage: 3.3V Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 1Mx32bitx4 Access time: 5.4ns Clock frequency: 166MHz кількість в упаковці: 1000 шт |
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AS4C4M32SA-7TCN | Alliance Memory |
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на замовлення 463 шт: термін постачання 21-30 дні (днів) |
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AS4C4M32SA-7TCNTR | Alliance Memory |
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AS4C4M32SA-7TCNTR | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 1Mx32bitx4; 3.3V; 143MHz; 5.4ns; TSOP86; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 1Mx32bitx4 Clock frequency: 143MHz Access time: 5.4ns Case: TSOP86 Memory capacity: 128Mb Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel Operating voltage: 3.3V |
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AS4C512M16D3L-12BCN | Alliance Memory |
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на замовлення 34 шт: термін постачання 21-30 дні (днів) |
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AS4C512M16D3L-12BCNTR | Alliance Memory |
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AS4C512M16D3L-12BIN | Alliance Memory |
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на замовлення 2423 шт: термін постачання 21-30 дні (днів) |
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AS4C512M16D3L-12BINTR | Alliance Memory |
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AS4C512M16D3LA-10BAN | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 1.35V; 933MHz; 13.91ns Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory: 8Gb DRAM Memory organisation: 512Mx16bit Clock frequency: 933MHz Access time: 13.91ns Case: FBGA96 Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Operating voltage: 1.35V |
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AS4C512M16D3LA-10BANTR | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 1.35V; 933MHz; 13.91ns; reel Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory: 8Gb DRAM Memory organisation: 512Mx16bit Clock frequency: 933MHz Access time: 13.91ns Case: FBGA96 Mounting: SMD Operating temperature: -40...105°C Kind of package: reel Operating voltage: 1.35V |
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AS4C512M16D3LA-10BCN | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 1.35V; 933MHz; 13.91ns Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory: 8Gb DRAM Memory organisation: 512Mx16bit Clock frequency: 933MHz Access time: 13.91ns Case: FBGA96 Mounting: SMD Operating temperature: 0...95°C Kind of package: in-tray Operating voltage: 1.35V |
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AS4C512M16D3LA-10BCNTR | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 1.35V; 933MHz; 13.91ns; reel Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory: 8Gb DRAM Memory organisation: 512Mx16bit Clock frequency: 933MHz Access time: 13.91ns Case: FBGA96 Mounting: SMD Operating temperature: 0...95°C Kind of package: reel Operating voltage: 1.35V |
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AS4C512M16D3LA-10BIN | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 1.35V; 933MHz; 13.91ns Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory: 8Gb DRAM Memory organisation: 512Mx16bit Clock frequency: 933MHz Access time: 13.91ns Case: FBGA96 Mounting: SMD Operating temperature: -40...95°C Kind of package: in-tray Operating voltage: 1.35V |
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AS4C512M16D3LA-10BINTR | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 1.35V; 933MHz; 13.91ns; reel Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory: 8Gb DRAM Memory organisation: 512Mx16bit Clock frequency: 933MHz Access time: 13.91ns Case: FBGA96 Mounting: SMD Operating temperature: -40...95°C Kind of package: reel Operating voltage: 1.35V |
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AS4C512M16D3LA-10BAN | Alliance Memory |
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на замовлення 167 шт: термін постачання 21-30 дні (днів) |
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AS4C512M16D3LA-10BAN | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 1.35V; 933MHz; 13.91ns Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory: 8Gb DRAM Memory organisation: 512Mx16bit Clock frequency: 933MHz Access time: 13.91ns Case: FBGA96 Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Operating voltage: 1.35V кількість в упаковці: 180 шт |
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AS4C512M16D3LA-10BANTR | Alliance Memory |
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AS4C512M16D3LA-10BANTR | ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 1.35V; 933MHz; 13.91ns; reel Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory: 8Gb DRAM Memory organisation: 512Mx16bit Clock frequency: 933MHz Access time: 13.91ns Case: FBGA96 Mounting: SMD Operating temperature: -40...105°C Kind of package: reel Operating voltage: 1.35V кількість в упаковці: 2000 шт |
товар відсутній |
AS4C4M32D1A-5BCNTR |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 4Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: BGA144
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 4Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: BGA144
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 2.5V
товар відсутній
AS4C4M32D1A-5BIN |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 4Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: BGA144
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 4Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: BGA144
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
товар відсутній
AS4C4M32D1A-5BINTR |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 4Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: BGA144
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 2.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 4Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: BGA144
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 2.5V
товар відсутній
AS4C4M32D1A-5BCN |
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Виробник: Alliance Memory
DRAM DDR1, 128MB, 4M X 32, 2.5V, 144BGA, 200MHZ, COMMERCIAL TEMP - Tray
DRAM DDR1, 128MB, 4M X 32, 2.5V, 144BGA, 200MHZ, COMMERCIAL TEMP - Tray
товар відсутній
AS4C4M32D1A-5BCN |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 4Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: BGA144
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
кількість в упаковці: 189 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 4Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: BGA144
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
кількість в упаковці: 189 шт
товар відсутній
AS4C4M32D1A-5BCNTR |
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Виробник: Alliance Memory
DRAM DDR1, 128MB, 4M X 32, 2.5V, 144BGA, 200MHZ, COMMERCIAL TEMP - Tape & Reel
DRAM DDR1, 128MB, 4M X 32, 2.5V, 144BGA, 200MHZ, COMMERCIAL TEMP - Tape & Reel
товар відсутній
AS4C4M32D1A-5BCNTR |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 4Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: BGA144
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 2.5V
кількість в упаковці: 1500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 4Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: BGA144
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 2.5V
кількість в упаковці: 1500 шт
товар відсутній
AS4C4M32D1A-5BIN |
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Виробник: Alliance Memory
DRAM DDR1, 128MB, 4M X 32, 2.5V, 144BGA, 200MHZ, INDUSTRIAL TEMP - Tray
DRAM DDR1, 128MB, 4M X 32, 2.5V, 144BGA, 200MHZ, INDUSTRIAL TEMP - Tray
на замовлення 24 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 392.78 грн |
10+ | 341.9 грн |
100+ | 266.38 грн |
189+ | 265.68 грн |
567+ | 243.19 грн |
1890+ | 241.78 грн |
5670+ | 232.65 грн |
AS4C4M32D1A-5BIN |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 4Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: BGA144
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
кількість в упаковці: 189 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 4Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: BGA144
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 2.5V
кількість в упаковці: 189 шт
товар відсутній
AS4C4M32D1A-5BINTR |
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Виробник: Alliance Memory
DRAM DDR1, 128MB, 4M X 32, 2.5V, 144BGA, 200MHZ, INDUSTRIAL TEMP - Tape & Reel
DRAM DDR1, 128MB, 4M X 32, 2.5V, 144BGA, 200MHZ, INDUSTRIAL TEMP - Tape & Reel
товар відсутній
AS4C4M32D1A-5BINTR |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 4Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: BGA144
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 2.5V
кількість в упаковці: 1500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 4Mx32bit; 2.5V; 200MHz; 15ns; BGA144
Type of integrated circuit: DRAM memory
Kind of memory: DDR1; SDRAM
Memory: 128Mb DRAM
Memory organisation: 4Mx32bit
Clock frequency: 200MHz
Access time: 15ns
Case: BGA144
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 2.5V
кількість в упаковці: 1500 шт
товар відсутній
AS4C4M32MSA-6BIN |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bit; 1.7V; 166MHz; 5.5ns; FBGA90; -40÷85°C
Case: FBGA90
Operating temperature: -40...85°C
Mounting: SMD
Access time: 5.5ns
Kind of package: in-tray
Kind of memory: DDR1; SDRAM
Kind of interface: parallel
Memory capacity: 128Mb
Clock frequency: 166MHz
Operating voltage: 1.7V
Type of integrated circuit: DRAM memory
Memory organisation: 4Mx32bit
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bit; 1.7V; 166MHz; 5.5ns; FBGA90; -40÷85°C
Case: FBGA90
Operating temperature: -40...85°C
Mounting: SMD
Access time: 5.5ns
Kind of package: in-tray
Kind of memory: DDR1; SDRAM
Kind of interface: parallel
Memory capacity: 128Mb
Clock frequency: 166MHz
Operating voltage: 1.7V
Type of integrated circuit: DRAM memory
Memory organisation: 4Mx32bit
товар відсутній
AS4C4M32MSA-6BINTR |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bit; 1.7V; 166MHz; 5.5ns; FBGA90; -40÷85°C
Case: FBGA90
Operating temperature: -40...85°C
Mounting: SMD
Access time: 5.5ns
Kind of package: in-tray
Kind of memory: DDR1; SDRAM
Kind of interface: parallel
Memory capacity: 128Mb
Clock frequency: 166MHz
Operating voltage: 1.7V
Type of integrated circuit: DRAM memory
Memory organisation: 4Mx32bit
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bit; 1.7V; 166MHz; 5.5ns; FBGA90; -40÷85°C
Case: FBGA90
Operating temperature: -40...85°C
Mounting: SMD
Access time: 5.5ns
Kind of package: in-tray
Kind of memory: DDR1; SDRAM
Kind of interface: parallel
Memory capacity: 128Mb
Clock frequency: 166MHz
Operating voltage: 1.7V
Type of integrated circuit: DRAM memory
Memory organisation: 4Mx32bit
товар відсутній
AS4C4M32MSA-6BINTR |
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Виробник: Alliance Memory
DRAM 128M 166MHz 4Mx32 Mobile LP SDRAM IT
DRAM 128M 166MHz 4Mx32 Mobile LP SDRAM IT
товар відсутній
AS4C4M32S-6BIN |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bit; 3÷3.6V; 166MHz; 6.5ns; TFBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx32bit
Clock frequency: 166MHz
Access time: 6.5ns
Case: TFBGA90
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 3...3.6V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bit; 3÷3.6V; 166MHz; 6.5ns; TFBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx32bit
Clock frequency: 166MHz
Access time: 6.5ns
Case: TFBGA90
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 3...3.6V
товар відсутній
AS4C4M32S-6BINTR |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx32bitx4; 3.3V; 166MHz; 5.4ns; FBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA90
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx32bitx4; 3.3V; 166MHz; 5.4ns; FBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA90
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C4M32S-7BCN |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bit; 3÷3.6V; 143MHz; 6.5ns; TFBGA90; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx32bit
Clock frequency: 143MHz
Access time: 6.5ns
Case: TFBGA90
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Operating voltage: 3...3.6V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bit; 3÷3.6V; 143MHz; 6.5ns; TFBGA90; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx32bit
Clock frequency: 143MHz
Access time: 6.5ns
Case: TFBGA90
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Operating voltage: 3...3.6V
товар відсутній
AS4C4M32S-7BCNTR |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx32bitx4; 3.3V; 143MHz; 5.4ns; FBGA90; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: FBGA90
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx32bitx4; 3.3V; 143MHz; 5.4ns; FBGA90; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: FBGA90
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C4M32S-6BIN |
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Виробник: Alliance Memory
DRAM 128M, 3.3V, 4M x 32 SDRAM
DRAM 128M, 3.3V, 4M x 32 SDRAM
на замовлення 1206 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 455.92 грн |
10+ | 410.61 грн |
25+ | 347.21 грн |
100+ | 338.78 грн |
190+ | 287.47 грн |
570+ | 274.11 грн |
AS4C4M32S-6BIN |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bit; 3÷3.6V; 166MHz; 6.5ns; TFBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx32bit
Clock frequency: 166MHz
Access time: 6.5ns
Case: TFBGA90
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 3...3.6V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bit; 3÷3.6V; 166MHz; 6.5ns; TFBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx32bit
Clock frequency: 166MHz
Access time: 6.5ns
Case: TFBGA90
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Operating voltage: 3...3.6V
товар відсутній
AS4C4M32S-6BIN |
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Виробник: Alliance Memory
Синхронна динамічна енергозалежна пам'ять SDRAM; Uживл, В = 3,0...3.6; Об'єм RAM = 128 Кбайт; Орг. пам. = 4М х 32; Тдост/Частота = 166 МГц; Тексп, °C = -40...+85; Тип інтерф. = Паралельний; TFBGA-90
Синхронна динамічна енергозалежна пам'ять SDRAM; Uживл, В = 3,0...3.6; Об'єм RAM = 128 Кбайт; Орг. пам. = 4М х 32; Тдост/Частота = 166 МГц; Тексп, °C = -40...+85; Тип інтерф. = Паралельний; TFBGA-90
на замовлення 1 шт:
термін постачання 3-4 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 624 грн |
10+ | 480.03 грн |
100+ | 445.74 грн |
AS4C4M32S-6BINTR |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx32bitx4; 3.3V; 166MHz; 5.4ns; FBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA90
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx32bitx4; 3.3V; 166MHz; 5.4ns; FBGA90; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: FBGA90
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C4M32S-7BCN |
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Виробник: Alliance Memory
DRAM 128Mb, 3.3V, 143Mhz 4M x 32 SDRAM
DRAM 128Mb, 3.3V, 143Mhz 4M x 32 SDRAM
на замовлення 327 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 397.7 грн |
10+ | 354.84 грн |
25+ | 302.23 грн |
50+ | 300.82 грн |
100+ | 269.19 грн |
190+ | 268.49 грн |
570+ | 257.95 грн |
AS4C4M32S-7BCN |
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Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C4M32S-7BCN - DRAM, SDRAM, 128 Mbit, 4M x 32 Bit, 143 MHz, TFBGA, 90 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: SDRAM
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: TFBGA
Speicherdichte: 128Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 143MHz
Betriebstemperatur, min.: 0°C
euEccn: NLR
Anzahl der Pins: 90Pin(s)
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 70°C
Speicherkonfiguration: 4M x 32 Bit
SVHC: No SVHC (14-Jun-2023)
Description: ALLIANCE MEMORY - AS4C4M32S-7BCN - DRAM, SDRAM, 128 Mbit, 4M x 32 Bit, 143 MHz, TFBGA, 90 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: SDRAM
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: TFBGA
Speicherdichte: 128Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 143MHz
Betriebstemperatur, min.: 0°C
euEccn: NLR
Anzahl der Pins: 90Pin(s)
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 70°C
Speicherkonfiguration: 4M x 32 Bit
SVHC: No SVHC (14-Jun-2023)
на замовлення 180 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 411.58 грн |
10+ | 328 грн |
25+ | 310.65 грн |
50+ | 271.62 грн |
100+ | 235.86 грн |
AS4C4M32S-7BCN |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bit; 3÷3.6V; 143MHz; 6.5ns; TFBGA90; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx32bit
Clock frequency: 143MHz
Access time: 6.5ns
Case: TFBGA90
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Operating voltage: 3...3.6V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4Mx32bit; 3÷3.6V; 143MHz; 6.5ns; TFBGA90; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx32bit
Clock frequency: 143MHz
Access time: 6.5ns
Case: TFBGA90
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Operating voltage: 3...3.6V
товар відсутній
AS4C4M32S-7BCNTR |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx32bitx4; 3.3V; 143MHz; 5.4ns; FBGA90; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: FBGA90
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx32bitx4; 3.3V; 143MHz; 5.4ns; FBGA90; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: FBGA90
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C4M32S-7TCN |
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Виробник: Alliance Memory
DRAM 128Mb, 3.3V, 143Mhz 4M x 32 SDRAM
DRAM 128Mb, 3.3V, 143Mhz 4M x 32 SDRAM
на замовлення 421 шт:
термін постачання 21-30 дні (днів)AS4C4M32SA-6TCN |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 3.3V; 166MHz; 5.4ns; TSOP86
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP86
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 3.3V; 166MHz; 5.4ns; TSOP86
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP86
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
на замовлення 60 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 421.04 грн |
4+ | 284.8 грн |
9+ | 269.43 грн |
AS4C4M32SA-6TCNTR |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 3.3V; 166MHz; 5.4ns; TSOP86
Mounting: SMD
Case: TSOP86
Kind of package: reel
Operating temperature: 0...70°C
Kind of interface: parallel
Memory: 128Mb DRAM
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx32bitx4
Access time: 5.4ns
Clock frequency: 166MHz
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 3.3V; 166MHz; 5.4ns; TSOP86
Mounting: SMD
Case: TSOP86
Kind of package: reel
Operating temperature: 0...70°C
Kind of interface: parallel
Memory: 128Mb DRAM
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx32bitx4
Access time: 5.4ns
Clock frequency: 166MHz
товар відсутній
AS4C4M32SA-6TINTR |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 3.3V; 166MHz; 5.4ns; TSOP86
Mounting: SMD
Case: TSOP86
Kind of package: reel
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 128Mb DRAM
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx32bitx4
Access time: 5.4ns
Clock frequency: 166MHz
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 3.3V; 166MHz; 5.4ns; TSOP86
Mounting: SMD
Case: TSOP86
Kind of package: reel
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 128Mb DRAM
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx32bitx4
Access time: 5.4ns
Clock frequency: 166MHz
товар відсутній
AS4C4M32SA-7TCNTR |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx32bitx4; 3.3V; 143MHz; 5.4ns; TSOP86; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP86
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx32bitx4; 3.3V; 143MHz; 5.4ns; TSOP86; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP86
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C4M32SA-6TCN |
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Виробник: Alliance Memory
DRAM SDRAM, 128MB, 4M X 32, 3.3V, 86PIN TSOP II, 166 MHZ, COMMERCIAL TEMP - Tray
DRAM SDRAM, 128MB, 4M X 32, 3.3V, 86PIN TSOP II, 166 MHZ, COMMERCIAL TEMP - Tray
на замовлення 64 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 353.42 грн |
10+ | 321.7 грн |
108+ | 237.57 грн |
2160+ | 235.46 грн |
5400+ | 231.24 грн |
10800+ | 228.43 грн |
AS4C4M32SA-6TCN |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 3.3V; 166MHz; 5.4ns; TSOP86
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP86
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
кількість в упаковці: 1 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 3.3V; 166MHz; 5.4ns; TSOP86
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory: 128Mb DRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 166MHz
Access time: 5.4ns
Case: TSOP86
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 3.3V
кількість в упаковці: 1 шт
на замовлення 60 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 505.25 грн |
4+ | 354.91 грн |
9+ | 323.31 грн |
108+ | 311.01 грн |
AS4C4M32SA-6TCNTR |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 3.3V; 166MHz; 5.4ns; TSOP86
Mounting: SMD
Case: TSOP86
Kind of package: reel
Operating temperature: 0...70°C
Kind of interface: parallel
Memory: 128Mb DRAM
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx32bitx4
Access time: 5.4ns
Clock frequency: 166MHz
кількість в упаковці: 1000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 3.3V; 166MHz; 5.4ns; TSOP86
Mounting: SMD
Case: TSOP86
Kind of package: reel
Operating temperature: 0...70°C
Kind of interface: parallel
Memory: 128Mb DRAM
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx32bitx4
Access time: 5.4ns
Clock frequency: 166MHz
кількість в упаковці: 1000 шт
товар відсутній
AS4C4M32SA-6TIN |
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Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C4M32SA-6TIN - DRAM, SDRAM, 128 Mbit, 4M x 32 Bit, 166 MHz, TSOP-II, 86 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: SDRAM
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: TSOP-II
Speicherdichte: 128Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Betriebstemperatur, min.: -40°C
euEccn: NLR
Anzahl der Pins: 86Pin(s)
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 85°C
Speicherkonfiguration: 4M x 32 Bit
SVHC: No SVHC (14-Jun-2023)
Description: ALLIANCE MEMORY - AS4C4M32SA-6TIN - DRAM, SDRAM, 128 Mbit, 4M x 32 Bit, 166 MHz, TSOP-II, 86 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: SDRAM
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: TSOP-II
Speicherdichte: 128Mbit
usEccn: EAR99
Versorgungsspannung, nom.: 3.3V
Taktfrequenz, max.: 166MHz
Betriebstemperatur, min.: -40°C
euEccn: NLR
Anzahl der Pins: 86Pin(s)
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 85°C
Speicherkonfiguration: 4M x 32 Bit
SVHC: No SVHC (14-Jun-2023)
на замовлення 22 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 506.19 грн |
10+ | 436.81 грн |
AS4C4M32SA-6TIN |
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Виробник: Alliance Memory
DRAM SDRAM, 128MB, 4M X 32, 3.3V, 86PIN TSOP II, 166 MHZ INDUSTRIAL TEMP - Tray
DRAM SDRAM, 128MB, 4M X 32, 3.3V, 86PIN TSOP II, 166 MHZ INDUSTRIAL TEMP - Tray
на замовлення 838 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 478.88 грн |
10+ | 433.24 грн |
108+ | 319.1 грн |
540+ | 292.39 грн |
5400+ | 291.69 грн |
AS4C4M32SA-6TINTR |
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Виробник: Alliance Memory
DRAM SDRAM,128M,3.3V 166Mhz,4M x 32
DRAM SDRAM,128M,3.3V 166Mhz,4M x 32
на замовлення 800 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 486.26 грн |
10+ | 438.09 грн |
100+ | 332.45 грн |
250+ | 331.75 грн |
500+ | 310.66 грн |
1000+ | 295.9 грн |
2000+ | 293.09 грн |
AS4C4M32SA-6TINTR |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 3.3V; 166MHz; 5.4ns; TSOP86
Mounting: SMD
Case: TSOP86
Kind of package: reel
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 128Mb DRAM
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx32bitx4
Access time: 5.4ns
Clock frequency: 166MHz
кількість в упаковці: 1000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 3.3V; 166MHz; 5.4ns; TSOP86
Mounting: SMD
Case: TSOP86
Kind of package: reel
Operating temperature: -40...85°C
Kind of interface: parallel
Memory: 128Mb DRAM
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx32bitx4
Access time: 5.4ns
Clock frequency: 166MHz
кількість в упаковці: 1000 шт
товар відсутній
AS4C4M32SA-7TCN |
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Виробник: Alliance Memory
DRAM SDRAM, 128MB, 4M X 32, 3.3V, 86PIN TSOP II, 143 MHZ, COMMERCIAL TEMP - Tray
DRAM SDRAM, 128MB, 4M X 32, 3.3V, 86PIN TSOP II, 143 MHZ, COMMERCIAL TEMP - Tray
на замовлення 463 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 353.42 грн |
10+ | 316.85 грн |
108+ | 233.35 грн |
540+ | 218.59 грн |
2160+ | 215.07 грн |
5400+ | 209.45 грн |
10800+ | 208.05 грн |
AS4C4M32SA-7TCNTR |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx32bitx4; 3.3V; 143MHz; 5.4ns; TSOP86; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP86
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1Mx32bitx4; 3.3V; 143MHz; 5.4ns; TSOP86; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 1Mx32bitx4
Clock frequency: 143MHz
Access time: 5.4ns
Case: TSOP86
Memory capacity: 128Mb
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: reel
Operating voltage: 3.3V
товар відсутній
AS4C512M16D3L-12BCN |
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Виробник: Alliance Memory
DRAM 8GB 1.35V 800MHz 512M x 16 DDR3L CT
DRAM 8GB 1.35V 800MHz 512M x 16 DDR3L CT
на замовлення 34 шт:
термін постачання 21-30 дні (днів)AS4C512M16D3L-12BCNTR |
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Виробник: Alliance Memory
DRAM 8GB 1.35V 800MHz 512M x 16 DDR3L CT
DRAM 8GB 1.35V 800MHz 512M x 16 DDR3L CT
товар відсутній
AS4C512M16D3L-12BIN |
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Виробник: Alliance Memory
DRAM 8GB 1.35V 800MHz 512M x 16 DDR3L IT
DRAM 8GB 1.35V 800MHz 512M x 16 DDR3L IT
на замовлення 2423 шт:
термін постачання 21-30 дні (днів)AS4C512M16D3L-12BINTR |
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Виробник: Alliance Memory
DRAM 8GB 1.35V 800MHz 512M x 16 DDR3L IT
DRAM 8GB 1.35V 800MHz 512M x 16 DDR3L IT
товар відсутній
AS4C512M16D3LA-10BAN |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 1.35V; 933MHz; 13.91ns
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 8Gb DRAM
Memory organisation: 512Mx16bit
Clock frequency: 933MHz
Access time: 13.91ns
Case: FBGA96
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 1.35V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 1.35V; 933MHz; 13.91ns
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 8Gb DRAM
Memory organisation: 512Mx16bit
Clock frequency: 933MHz
Access time: 13.91ns
Case: FBGA96
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 1.35V
товар відсутній
AS4C512M16D3LA-10BANTR |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 1.35V; 933MHz; 13.91ns; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 8Gb DRAM
Memory organisation: 512Mx16bit
Clock frequency: 933MHz
Access time: 13.91ns
Case: FBGA96
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Operating voltage: 1.35V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 1.35V; 933MHz; 13.91ns; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 8Gb DRAM
Memory organisation: 512Mx16bit
Clock frequency: 933MHz
Access time: 13.91ns
Case: FBGA96
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Operating voltage: 1.35V
товар відсутній
AS4C512M16D3LA-10BCN |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 1.35V; 933MHz; 13.91ns
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 8Gb DRAM
Memory organisation: 512Mx16bit
Clock frequency: 933MHz
Access time: 13.91ns
Case: FBGA96
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: in-tray
Operating voltage: 1.35V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 1.35V; 933MHz; 13.91ns
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 8Gb DRAM
Memory organisation: 512Mx16bit
Clock frequency: 933MHz
Access time: 13.91ns
Case: FBGA96
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: in-tray
Operating voltage: 1.35V
товар відсутній
AS4C512M16D3LA-10BCNTR |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 1.35V; 933MHz; 13.91ns; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 8Gb DRAM
Memory organisation: 512Mx16bit
Clock frequency: 933MHz
Access time: 13.91ns
Case: FBGA96
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: reel
Operating voltage: 1.35V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 1.35V; 933MHz; 13.91ns; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 8Gb DRAM
Memory organisation: 512Mx16bit
Clock frequency: 933MHz
Access time: 13.91ns
Case: FBGA96
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: reel
Operating voltage: 1.35V
товар відсутній
AS4C512M16D3LA-10BIN |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 1.35V; 933MHz; 13.91ns
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 8Gb DRAM
Memory organisation: 512Mx16bit
Clock frequency: 933MHz
Access time: 13.91ns
Case: FBGA96
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: in-tray
Operating voltage: 1.35V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 1.35V; 933MHz; 13.91ns
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 8Gb DRAM
Memory organisation: 512Mx16bit
Clock frequency: 933MHz
Access time: 13.91ns
Case: FBGA96
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: in-tray
Operating voltage: 1.35V
товар відсутній
AS4C512M16D3LA-10BINTR |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 1.35V; 933MHz; 13.91ns; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 8Gb DRAM
Memory organisation: 512Mx16bit
Clock frequency: 933MHz
Access time: 13.91ns
Case: FBGA96
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 1.35V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 1.35V; 933MHz; 13.91ns; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 8Gb DRAM
Memory organisation: 512Mx16bit
Clock frequency: 933MHz
Access time: 13.91ns
Case: FBGA96
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 1.35V
товар відсутній
AS4C512M16D3LA-10BAN |
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Виробник: Alliance Memory
DRAM DDR3L, 8G, 512M X 16, 1.35V, 96-ball FBGA, 933Mhz, Auto Temp, A Die
DRAM DDR3L, 8G, 512M X 16, 1.35V, 96-ball FBGA, 933Mhz, Auto Temp, A Die
на замовлення 167 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1933.56 грн |
AS4C512M16D3LA-10BAN |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 1.35V; 933MHz; 13.91ns
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 8Gb DRAM
Memory organisation: 512Mx16bit
Clock frequency: 933MHz
Access time: 13.91ns
Case: FBGA96
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 1.35V
кількість в упаковці: 180 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 1.35V; 933MHz; 13.91ns
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 8Gb DRAM
Memory organisation: 512Mx16bit
Clock frequency: 933MHz
Access time: 13.91ns
Case: FBGA96
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 1.35V
кількість в упаковці: 180 шт
товар відсутній
AS4C512M16D3LA-10BANTR |
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Виробник: Alliance Memory
DRAM DDR3L, 8G, 512M X 16, 1.35V, 96-ball FBGA, 933Mhz, Auto Temp, T&R
DRAM DDR3L, 8G, 512M X 16, 1.35V, 96-ball FBGA, 933Mhz, Auto Temp, T&R
товар відсутній
AS4C512M16D3LA-10BANTR |
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Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 1.35V; 933MHz; 13.91ns; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 8Gb DRAM
Memory organisation: 512Mx16bit
Clock frequency: 933MHz
Access time: 13.91ns
Case: FBGA96
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Operating voltage: 1.35V
кількість в упаковці: 2000 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 1.35V; 933MHz; 13.91ns; reel
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 8Gb DRAM
Memory organisation: 512Mx16bit
Clock frequency: 933MHz
Access time: 13.91ns
Case: FBGA96
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Operating voltage: 1.35V
кількість в упаковці: 2000 шт
товар відсутній