Продукція > ALLIANCE MEMORY > Всі товари виробника ALLIANCE MEMORY (3714) > Сторінка 20 з 62
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
AS4C512M32MD4V-046BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 16GbDRAM; FBGA200; -40÷95°C; in-tray Type of integrated circuit: DRAM memory Kind of memory: LPDDR4; SDRAM Memory: 16Gb DRAM Case: FBGA200 Mounting: SMD Operating temperature: -40...95°C Kind of package: in-tray |
товар відсутній |
||||||||||||||||
AS4C512M32MD4V-053BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 16GbSDRAM; 1866MHz; FBGA200; -40÷105°C Type of integrated circuit: DRAM memory Kind of memory: LPDDR4; SDRAM Memory: 16Gb SDRAM Clock frequency: 1866MHz Case: FBGA200 Mounting: SMD Operating temperature: -40...105°C |
товар відсутній |
||||||||||||||||
AS4C512M32MD4V-046BIN | Alliance Memory | DRAM LPDDR4X, 16Gb, 512M x 32, 0.6V, 200ball TFBGA, 2133MHZ, INDUSTRIAL TEMP |
на замовлення 240 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
AS4C512M32MD4V-053BIN | Alliance Memory | DRAM LPDDR4X, 16Gb, 512M x 32, 0.6V, 200ball TFBGA, 1866MHZ, INDUSTRIAL TEMP - Tray |
товар відсутній |
||||||||||||||||
AS4C512M32MD4V-053BIN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS4C512M32MD4V-053BIN - DRAM, Mobile LPDDR4X, 16 GB, 512M x 32 Bit, 1.866 GHz, TFBGA, 200 Pin(s) tariffCode: 85423290 DRAM-Ausführung: Mobile LPDDR4X rohsCompliant: YES IC-Montage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: TBA IC-Gehäuse / Bauform: TFBGA Speicherdichte: 16GB usEccn: 3A991.b.1.a Versorgungsspannung, nom.: 1.8V Taktfrequenz, max.: 1.866GHz Betriebstemperatur, min.: -40°C euEccn: NLR Anzahl der Pins: 200Pin(s) Produktpalette: - productTraceability: No Betriebstemperatur, max.: 85°C Speicherkonfiguration: 512M x 32 Bit SVHC: No SVHC (14-Jun-2023) |
на замовлення 120 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
AS4C512M4D3LC-12BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 512Mx4bit; 1.35V; 800MHz; 13.75ns; FBGA78 Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory: 2Gb DRAM Memory organisation: 512Mx4bit Clock frequency: 800MHz Access time: 13.75ns Case: FBGA78 Mounting: SMD Operating temperature: 0...95°C Kind of package: in-tray Operating voltage: 1.35V |
товар відсутній |
||||||||||||||||
AS4C512M4D3LC-12BCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 512Mx4bit; 1.35V; 800MHz; 13.75ns; FBGA78 Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory: 2Gb DRAM Memory organisation: 512Mx4bit Clock frequency: 800MHz Access time: 13.75ns Case: FBGA78 Mounting: SMD Operating temperature: 0...95°C Kind of package: reel Operating voltage: 1.35V |
товар відсутній |
||||||||||||||||
AS4C512M4D3LC-12BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 512Mx4bit; 1.35V; 800MHz; 13.75ns; FBGA78 Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory: 2Gb DRAM Memory organisation: 512Mx4bit Clock frequency: 800MHz Access time: 13.75ns Case: FBGA78 Mounting: SMD Operating temperature: 0...95°C Kind of package: in-tray Operating voltage: 1.35V кількість в упаковці: 210 шт |
товар відсутній |
||||||||||||||||
AS4C512M4D3LC-12BCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 512Mx4bit; 1.35V; 800MHz; 13.75ns; FBGA78 Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory: 2Gb DRAM Memory organisation: 512Mx4bit Clock frequency: 800MHz Access time: 13.75ns Case: FBGA78 Mounting: SMD Operating temperature: 0...95°C Kind of package: reel Operating voltage: 1.35V кількість в упаковці: 2500 шт |
товар відсутній |
||||||||||||||||
AS4C512M8D3-12BAN | Alliance Memory | DRAM 4G 1.5V 1600Mhz 512M x 8 DDR3 |
на замовлення 92 шт: термін постачання 21-30 дні (днів) |
||||||||||||||||
AS4C512M8D3-12BCN | Alliance Memory | DRAM 4G, 1.5V, 1600Mhz 512M x 8 DDR3 |
на замовлення 125 шт: термін постачання 21-30 дні (днів) |
||||||||||||||||
AS4C512M8D3A-12BAN | Alliance Memory | DRAM 4G 1.5V 800MHz 512M x 8 DDR3 |
на замовлення 220 шт: термін постачання 21-30 дні (днів) |
||||||||||||||||
AS4C512M8D3A-12BANTR | Alliance Memory | DRAM 4G 1.5V 800MHz 512M x 8 DDR3 |
товар відсутній |
||||||||||||||||
AS4C512M8D3A-12BCN | Alliance Memory | DRAM 4G 1.5V 800MHz 512M x 8 DDR3 |
на замовлення 204 шт: термін постачання 21-30 дні (днів) |
||||||||||||||||
AS4C512M8D3A-12BCNTR | Alliance Memory | DRAM 4G 1.5V 800MHz 512M x 8 DDR3 |
товар відсутній |
||||||||||||||||
AS4C512M8D3A-12BIN | Alliance Memory | DRAM 4G 1.5V 800MHz 512M x 8 DDR3 |
на замовлення 972 шт: термін постачання 21-30 дні (днів) |
||||||||||||||||
AS4C512M8D3A-12BINTR | Alliance Memory | DRAM 4G 1.5V 800MHz 512M x 8 DDR3 |
товар відсутній |
||||||||||||||||
AS4C512M8D3B-12BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.5V; 800MHz; FBGA78; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory: 4Gb DRAM Memory organisation: 512Mx8bit Clock frequency: 800MHz Case: FBGA78 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 1.5V |
товар відсутній |
||||||||||||||||
AS4C512M8D3B-12BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.5V; 800MHz; FBGA78; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory: 4Gb DRAM Memory organisation: 512Mx8bit Clock frequency: 800MHz Case: FBGA78 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 1.5V |
товар відсутній |
||||||||||||||||
AS4C512M8D3B-12BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.5V; 800MHz; FBGA78; 0÷70°C Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory: 4Gb DRAM Memory organisation: 512Mx8bit Clock frequency: 800MHz Case: FBGA78 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 1.5V кількість в упаковці: 220 шт |
товар відсутній |
||||||||||||||||
AS4C512M8D3B-12BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.5V; 800MHz; FBGA78; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: DDR3; SDRAM Memory: 4Gb DRAM Memory organisation: 512Mx8bit Clock frequency: 800MHz Case: FBGA78 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray Operating voltage: 1.5V кількість в упаковці: 220 шт |
товар відсутній |
||||||||||||||||
AS4C512M8D3L-12BCN | Alliance Memory | DRAM 4G 1.35V 1600Mhz 512M x 8 DDR3 |
на замовлення 222 шт: термін постачання 21-30 дні (днів) |
||||||||||||||||
AS4C512M8D3LA-12BAN | Alliance Memory | DRAM 4G 1.35V 800MHz 512M x 8 DDR3 |
на замовлення 220 шт: термін постачання 21-30 дні (днів) |
||||||||||||||||
AS4C512M8D3LA-12BANTR | Alliance Memory | DRAM 4G 1.35V 800MHz 512M x 8 DDR3 |
товар відсутній |
||||||||||||||||
AS4C512M8D3LA-12BCN | Alliance Memory | DRAM 4G 1.35V 800MHz 512M x 8 DDR3 |
на замовлення 220 шт: термін постачання 21-30 дні (днів) |
||||||||||||||||
AS4C512M8D3LA-12BCNTR | Alliance Memory | DRAM 4G 1.35V 800MHz 512M x 8 DDR3 |
товар відсутній |
||||||||||||||||
AS4C512M8D3LA-12BIN | Alliance Memory | DRAM 4G 1.35V 800MHz 512M x 8 DDR3 |
на замовлення 213 шт: термін постачання 21-30 дні (днів) |
||||||||||||||||
AS4C512M8D3LA-12BINTR | Alliance Memory | DRAM 4G 1.35V 800MHz 512M x 8 DDR3 |
товар відсутній |
||||||||||||||||
AS4C512M8D3LB-12BAN | Alliance Memory | DRAM 4G 1.35V 800MHz 512Mx8 DDR3 A-Temp |
на замовлення 412 шт: термін постачання 21-30 дні (днів) |
||||||||||||||||
AS4C512M8D3LB-12BANTR | Alliance Memory | DRAM 4G 1.35V 800MHz 512Mx8 DDR3 A-Temp |
товар відсутній |
||||||||||||||||
AS4C512M8D3LB-12BCN | Alliance Memory | DRAM 4G 1.35V 800MHz 512M x 8 DDR3 |
на замовлення 399 шт: термін постачання 21-30 дні (днів) |
||||||||||||||||
AS4C512M8D3LB-12BCNTR | Alliance Memory | DRAM 4G 1.35V 800MHz 512M x 8 DDR3 |
товар відсутній |
||||||||||||||||
AS4C512M8D3LB-12BIN | Alliance Memory | DRAM 4G 1.35V 800MHz 512M x 8 DDR3 I-Temp |
на замовлення 106 шт: термін постачання 21-30 дні (днів) |
||||||||||||||||
AS4C512M8D3LB-12BINTR | Alliance Memory | DRAM 4G 1.35V 800MHz 512M x 8 DDR3 I-Temp |
товар відсутній |
||||||||||||||||
AS4C512M8D3LC-12BAN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78 Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory: 4Gb DRAM Memory organisation: 512Mx8bit Clock frequency: 800MHz Access time: 13.75ns Case: FBGA78 Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Operating voltage: 1.35V |
товар відсутній |
||||||||||||||||
AS4C512M8D3LC-12BANTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78 Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory: 4Gb DRAM Memory organisation: 512Mx8bit Clock frequency: 800MHz Access time: 13.75ns Case: FBGA78 Mounting: SMD Operating temperature: -40...105°C Kind of package: reel Operating voltage: 1.35V |
товар відсутній |
||||||||||||||||
AS4C512M8D3LC-12BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78 Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory: 4Gb DRAM Memory organisation: 512Mx8bit Clock frequency: 800MHz Access time: 13.75ns Case: FBGA78 Mounting: SMD Operating temperature: 0...95°C Kind of package: in-tray Operating voltage: 1.35V |
товар відсутній |
||||||||||||||||
AS4C512M8D3LC-12BCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78 Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory: 4Gb DRAM Memory organisation: 512Mx8bit Clock frequency: 800MHz Access time: 13.75ns Case: FBGA78 Mounting: SMD Operating temperature: 0...95°C Kind of package: reel Operating voltage: 1.35V |
товар відсутній |
||||||||||||||||
AS4C512M8D3LC-12BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78 Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory: 4Gb DRAM Memory organisation: 512Mx8bit Clock frequency: 800MHz Access time: 13.75ns Case: FBGA78 Mounting: SMD Operating temperature: -40...95°C Kind of package: in-tray Operating voltage: 1.35V |
товар відсутній |
||||||||||||||||
AS4C512M8D3LC-12BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78 Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory: 4Gb DRAM Memory organisation: 512Mx8bit Clock frequency: 800MHz Access time: 13.75ns Case: FBGA78 Mounting: SMD Operating temperature: -40...95°C Kind of package: reel Operating voltage: 1.35V |
товар відсутній |
||||||||||||||||
AS4C512M8D3LC-10BAN | Alliance Memory | DRAM DDR3, 4G, 512M x 8, 1.35V, 96-BALL FBGA, 933MHZ, Automotive Temp - Tray |
товар відсутній |
||||||||||||||||
AS4C512M8D3LC-10BANTR | Alliance Memory | DRAM DDR3, 4G, 512M x 8, 1.35V, 96-BALL FBGA, 933MHZ, Automotive Temp - Tape & Reel |
товар відсутній |
||||||||||||||||
AS4C512M8D3LC-12BAN | Alliance Memory | DRAM DDR3, 4G, 512M x 8, 1.35V, 78-Ball FBGA, 800 MHz, Automotive Temp - Tray |
товар відсутній |
||||||||||||||||
AS4C512M8D3LC-12BAN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78 Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory: 4Gb DRAM Memory organisation: 512Mx8bit Clock frequency: 800MHz Access time: 13.75ns Case: FBGA78 Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Operating voltage: 1.35V кількість в упаковці: 220 шт |
товар відсутній |
||||||||||||||||
AS4C512M8D3LC-12BANTR | Alliance Memory | DRAM DDR3, 4G, 512M x 8, 1.35V, 78-Ball FBGA, 800 MHz, Automotive Temp - Tape & Reel |
товар відсутній |
||||||||||||||||
AS4C512M8D3LC-12BANTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78 Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory: 4Gb DRAM Memory organisation: 512Mx8bit Clock frequency: 800MHz Access time: 13.75ns Case: FBGA78 Mounting: SMD Operating temperature: -40...105°C Kind of package: reel Operating voltage: 1.35V кількість в упаковці: 2500 шт |
товар відсутній |
||||||||||||||||
AS4C512M8D3LC-12BCN | ALLIANCE MEMORY |
Description: ALLIANCE MEMORY - AS4C512M8D3LC-12BCN - DRAM, DDR3, 4 Gbit, 512M x 8 Bit, 800 MHz, FBGA, 78 Pin(s) tariffCode: 85423231 DRAM-Ausführung: DDR3 rohsCompliant: YES IC-Montage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES IC-Gehäuse / Bauform: FBGA Speicherdichte: 4Gbit usEccn: EAR99 Versorgungsspannung, nom.: 1.35V Taktfrequenz, max.: 800MHz Betriebstemperatur, min.: - euEccn: NLR Anzahl der Pins: 78Pin(s) Produktpalette: - productTraceability: No Betriebstemperatur, max.: 95°C Speicherkonfiguration: 512M x 8 Bit SVHC: No SVHC (27-Jun-2024) |
на замовлення 242 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
AS4C512M8D3LC-12BCN | Alliance Memory | DRAM DDR3, 4G, 512M x 8, 1.35V, 78-Ball FBGA, 800 MHz, Commercial Temp - Tray |
на замовлення 61 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
AS4C512M8D3LC-12BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78 Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory: 4Gb DRAM Memory organisation: 512Mx8bit Clock frequency: 800MHz Access time: 13.75ns Case: FBGA78 Mounting: SMD Operating temperature: 0...95°C Kind of package: in-tray Operating voltage: 1.35V кількість в упаковці: 220 шт |
товар відсутній |
||||||||||||||||
AS4C512M8D3LC-12BCNTR | Alliance Memory | DRAM DDR3, 4G, 512M x 8, 1.35V, 78-Ball FBGA, 800 MHz, Commercial Temp - Tape & Reel |
товар відсутній |
||||||||||||||||
AS4C512M8D3LC-12BCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78 Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory: 4Gb DRAM Memory organisation: 512Mx8bit Clock frequency: 800MHz Access time: 13.75ns Case: FBGA78 Mounting: SMD Operating temperature: 0...95°C Kind of package: reel Operating voltage: 1.35V кількість в упаковці: 2500 шт |
товар відсутній |
||||||||||||||||
AS4C512M8D3LC-12BIN | Alliance Memory | DRAM DDR3, 4G, 512M x 8, 1.35V, 78-Ball FBGA, 800 MHz, Industrial Temp - Tray |
на замовлення 904 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
AS4C512M8D3LC-12BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78 Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory: 4Gb DRAM Memory organisation: 512Mx8bit Clock frequency: 800MHz Access time: 13.75ns Case: FBGA78 Mounting: SMD Operating temperature: -40...95°C Kind of package: in-tray Operating voltage: 1.35V кількість в упаковці: 220 шт |
товар відсутній |
||||||||||||||||
AS4C512M8D3LC-12BINTR | Alliance Memory | DRAM DDR3, 4G, 512M x 8, 1.35V, 78-Ball FBGA, 800 MHz, Industrial Temp - Tape & Reel |
товар відсутній |
||||||||||||||||
AS4C512M8D3LC-12BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78 Type of integrated circuit: DRAM memory Kind of memory: DDR3L; SDRAM Memory: 4Gb DRAM Memory organisation: 512Mx8bit Clock frequency: 800MHz Access time: 13.75ns Case: FBGA78 Mounting: SMD Operating temperature: -40...95°C Kind of package: reel Operating voltage: 1.35V кількість в упаковці: 2500 шт |
товар відсутній |
||||||||||||||||
AS4C512M8D4-75BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78 Type of integrated circuit: DRAM memory Kind of memory: DDR4; SDRAM Memory: 4Gb DRAM Memory organisation: 512Mx8bit Clock frequency: 1333MHz Access time: 14.25ns Case: FBGA78 Mounting: SMD Operating temperature: 0...95°C Kind of package: in-tray Operating voltage: 1.2V |
товар відсутній |
||||||||||||||||
AS4C512M8D4-75BCNTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78 Type of integrated circuit: DRAM memory Kind of memory: DDR4; SDRAM Memory: 4Gb DRAM Memory organisation: 512Mx8bit Clock frequency: 1333MHz Access time: 14.25ns Case: FBGA78 Mounting: SMD Operating temperature: 0...95°C Kind of package: reel Operating voltage: 1.2V |
товар відсутній |
||||||||||||||||
AS4C512M8D4-75BIN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78 Type of integrated circuit: DRAM memory Kind of memory: DDR4; SDRAM Memory: 4Gb DRAM Memory organisation: 512Mx8bit Clock frequency: 1333MHz Access time: 14.25ns Case: FBGA78 Mounting: SMD Operating temperature: -40...95°C Kind of package: in-tray Operating voltage: 1.2V |
товар відсутній |
||||||||||||||||
AS4C512M8D4-75BINTR | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78 Type of integrated circuit: DRAM memory Kind of memory: DDR4; SDRAM Memory: 4Gb DRAM Memory organisation: 512Mx8bit Clock frequency: 1333MHz Access time: 14.25ns Case: FBGA78 Mounting: SMD Operating temperature: -40...95°C Kind of package: reel Operating voltage: 1.2V |
товар відсутній |
||||||||||||||||
AS4C512M8D4-83BCN | ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1.2GHz; 14.16ns; FBGA78 Memory: 4Gb DRAM Clock frequency: 1.2GHz Operating temperature: 0...95°C Kind of memory: DDR4; SDRAM Operating voltage: 1.2V Mounting: SMD Case: FBGA78 Type of integrated circuit: DRAM memory Memory organisation: 512Mx8bit Access time: 14.16ns Kind of package: in-tray |
товар відсутній |
AS4C512M32MD4V-046BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16GbDRAM; FBGA200; -40÷95°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR4; SDRAM
Memory: 16Gb DRAM
Case: FBGA200
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: in-tray
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16GbDRAM; FBGA200; -40÷95°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR4; SDRAM
Memory: 16Gb DRAM
Case: FBGA200
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: in-tray
товар відсутній
AS4C512M32MD4V-053BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16GbSDRAM; 1866MHz; FBGA200; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR4; SDRAM
Memory: 16Gb SDRAM
Clock frequency: 1866MHz
Case: FBGA200
Mounting: SMD
Operating temperature: -40...105°C
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16GbSDRAM; 1866MHz; FBGA200; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR4; SDRAM
Memory: 16Gb SDRAM
Clock frequency: 1866MHz
Case: FBGA200
Mounting: SMD
Operating temperature: -40...105°C
товар відсутній
AS4C512M32MD4V-046BIN |
Виробник: Alliance Memory
DRAM LPDDR4X, 16Gb, 512M x 32, 0.6V, 200ball TFBGA, 2133MHZ, INDUSTRIAL TEMP
DRAM LPDDR4X, 16Gb, 512M x 32, 0.6V, 200ball TFBGA, 2133MHZ, INDUSTRIAL TEMP
на замовлення 240 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1089.31 грн |
10+ | 994.33 грн |
25+ | 853.13 грн |
120+ | 738.04 грн |
240+ | 705.67 грн |
600+ | 701.35 грн |
1200+ | 656.75 грн |
AS4C512M32MD4V-053BIN |
Виробник: Alliance Memory
DRAM LPDDR4X, 16Gb, 512M x 32, 0.6V, 200ball TFBGA, 1866MHZ, INDUSTRIAL TEMP - Tray
DRAM LPDDR4X, 16Gb, 512M x 32, 0.6V, 200ball TFBGA, 1866MHZ, INDUSTRIAL TEMP - Tray
товар відсутній
AS4C512M32MD4V-053BIN |
Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C512M32MD4V-053BIN - DRAM, Mobile LPDDR4X, 16 GB, 512M x 32 Bit, 1.866 GHz, TFBGA, 200 Pin(s)
tariffCode: 85423290
DRAM-Ausführung: Mobile LPDDR4X
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: TBA
IC-Gehäuse / Bauform: TFBGA
Speicherdichte: 16GB
usEccn: 3A991.b.1.a
Versorgungsspannung, nom.: 1.8V
Taktfrequenz, max.: 1.866GHz
Betriebstemperatur, min.: -40°C
euEccn: NLR
Anzahl der Pins: 200Pin(s)
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 85°C
Speicherkonfiguration: 512M x 32 Bit
SVHC: No SVHC (14-Jun-2023)
Description: ALLIANCE MEMORY - AS4C512M32MD4V-053BIN - DRAM, Mobile LPDDR4X, 16 GB, 512M x 32 Bit, 1.866 GHz, TFBGA, 200 Pin(s)
tariffCode: 85423290
DRAM-Ausführung: Mobile LPDDR4X
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: TBA
IC-Gehäuse / Bauform: TFBGA
Speicherdichte: 16GB
usEccn: 3A991.b.1.a
Versorgungsspannung, nom.: 1.8V
Taktfrequenz, max.: 1.866GHz
Betriebstemperatur, min.: -40°C
euEccn: NLR
Anzahl der Pins: 200Pin(s)
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 85°C
Speicherkonfiguration: 512M x 32 Bit
SVHC: No SVHC (14-Jun-2023)
на замовлення 120 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1053.06 грн |
10+ | 935.25 грн |
25+ | 922.34 грн |
50+ | 798.76 грн |
100+ | 684.06 грн |
AS4C512M4D3LC-12BCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 512Mx4bit; 1.35V; 800MHz; 13.75ns; FBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory: 2Gb DRAM
Memory organisation: 512Mx4bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA78
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: in-tray
Operating voltage: 1.35V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 512Mx4bit; 1.35V; 800MHz; 13.75ns; FBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory: 2Gb DRAM
Memory organisation: 512Mx4bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA78
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: in-tray
Operating voltage: 1.35V
товар відсутній
AS4C512M4D3LC-12BCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 512Mx4bit; 1.35V; 800MHz; 13.75ns; FBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory: 2Gb DRAM
Memory organisation: 512Mx4bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA78
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: reel
Operating voltage: 1.35V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 512Mx4bit; 1.35V; 800MHz; 13.75ns; FBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory: 2Gb DRAM
Memory organisation: 512Mx4bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA78
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: reel
Operating voltage: 1.35V
товар відсутній
AS4C512M4D3LC-12BCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 512Mx4bit; 1.35V; 800MHz; 13.75ns; FBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory: 2Gb DRAM
Memory organisation: 512Mx4bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA78
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: in-tray
Operating voltage: 1.35V
кількість в упаковці: 210 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 512Mx4bit; 1.35V; 800MHz; 13.75ns; FBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory: 2Gb DRAM
Memory organisation: 512Mx4bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA78
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: in-tray
Operating voltage: 1.35V
кількість в упаковці: 210 шт
товар відсутній
AS4C512M4D3LC-12BCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 512Mx4bit; 1.35V; 800MHz; 13.75ns; FBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory: 2Gb DRAM
Memory organisation: 512Mx4bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA78
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: reel
Operating voltage: 1.35V
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 2GbDRAM; 512Mx4bit; 1.35V; 800MHz; 13.75ns; FBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory: 2Gb DRAM
Memory organisation: 512Mx4bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA78
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: reel
Operating voltage: 1.35V
кількість в упаковці: 2500 шт
товар відсутній
AS4C512M8D3-12BAN |
Виробник: Alliance Memory
DRAM 4G 1.5V 1600Mhz 512M x 8 DDR3
DRAM 4G 1.5V 1600Mhz 512M x 8 DDR3
на замовлення 92 шт:
термін постачання 21-30 дні (днів)AS4C512M8D3-12BCN |
Виробник: Alliance Memory
DRAM 4G, 1.5V, 1600Mhz 512M x 8 DDR3
DRAM 4G, 1.5V, 1600Mhz 512M x 8 DDR3
на замовлення 125 шт:
термін постачання 21-30 дні (днів)AS4C512M8D3A-12BAN |
Виробник: Alliance Memory
DRAM 4G 1.5V 800MHz 512M x 8 DDR3
DRAM 4G 1.5V 800MHz 512M x 8 DDR3
на замовлення 220 шт:
термін постачання 21-30 дні (днів)AS4C512M8D3A-12BCN |
Виробник: Alliance Memory
DRAM 4G 1.5V 800MHz 512M x 8 DDR3
DRAM 4G 1.5V 800MHz 512M x 8 DDR3
на замовлення 204 шт:
термін постачання 21-30 дні (днів)AS4C512M8D3A-12BIN |
Виробник: Alliance Memory
DRAM 4G 1.5V 800MHz 512M x 8 DDR3
DRAM 4G 1.5V 800MHz 512M x 8 DDR3
на замовлення 972 шт:
термін постачання 21-30 дні (днів)AS4C512M8D3B-12BCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.5V; 800MHz; FBGA78; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Clock frequency: 800MHz
Case: FBGA78
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 1.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.5V; 800MHz; FBGA78; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Clock frequency: 800MHz
Case: FBGA78
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 1.5V
товар відсутній
AS4C512M8D3B-12BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.5V; 800MHz; FBGA78; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Clock frequency: 800MHz
Case: FBGA78
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 1.5V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.5V; 800MHz; FBGA78; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Clock frequency: 800MHz
Case: FBGA78
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 1.5V
товар відсутній
AS4C512M8D3B-12BCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.5V; 800MHz; FBGA78; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Clock frequency: 800MHz
Case: FBGA78
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 1.5V
кількість в упаковці: 220 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.5V; 800MHz; FBGA78; 0÷70°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Clock frequency: 800MHz
Case: FBGA78
Mounting: SMD
Operating temperature: 0...70°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 1.5V
кількість в упаковці: 220 шт
товар відсутній
AS4C512M8D3B-12BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.5V; 800MHz; FBGA78; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Clock frequency: 800MHz
Case: FBGA78
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 1.5V
кількість в упаковці: 220 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.5V; 800MHz; FBGA78; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DDR3; SDRAM
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Clock frequency: 800MHz
Case: FBGA78
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: in-tray
Operating voltage: 1.5V
кількість в упаковці: 220 шт
товар відсутній
AS4C512M8D3L-12BCN |
Виробник: Alliance Memory
DRAM 4G 1.35V 1600Mhz 512M x 8 DDR3
DRAM 4G 1.35V 1600Mhz 512M x 8 DDR3
на замовлення 222 шт:
термін постачання 21-30 дні (днів)AS4C512M8D3LA-12BAN |
Виробник: Alliance Memory
DRAM 4G 1.35V 800MHz 512M x 8 DDR3
DRAM 4G 1.35V 800MHz 512M x 8 DDR3
на замовлення 220 шт:
термін постачання 21-30 дні (днів)AS4C512M8D3LA-12BCN |
Виробник: Alliance Memory
DRAM 4G 1.35V 800MHz 512M x 8 DDR3
DRAM 4G 1.35V 800MHz 512M x 8 DDR3
на замовлення 220 шт:
термін постачання 21-30 дні (днів)AS4C512M8D3LA-12BIN |
Виробник: Alliance Memory
DRAM 4G 1.35V 800MHz 512M x 8 DDR3
DRAM 4G 1.35V 800MHz 512M x 8 DDR3
на замовлення 213 шт:
термін постачання 21-30 дні (днів)AS4C512M8D3LB-12BAN |
Виробник: Alliance Memory
DRAM 4G 1.35V 800MHz 512Mx8 DDR3 A-Temp
DRAM 4G 1.35V 800MHz 512Mx8 DDR3 A-Temp
на замовлення 412 шт:
термін постачання 21-30 дні (днів)AS4C512M8D3LB-12BANTR |
Виробник: Alliance Memory
DRAM 4G 1.35V 800MHz 512Mx8 DDR3 A-Temp
DRAM 4G 1.35V 800MHz 512Mx8 DDR3 A-Temp
товар відсутній
AS4C512M8D3LB-12BCN |
Виробник: Alliance Memory
DRAM 4G 1.35V 800MHz 512M x 8 DDR3
DRAM 4G 1.35V 800MHz 512M x 8 DDR3
на замовлення 399 шт:
термін постачання 21-30 дні (днів)AS4C512M8D3LB-12BIN |
Виробник: Alliance Memory
DRAM 4G 1.35V 800MHz 512M x 8 DDR3 I-Temp
DRAM 4G 1.35V 800MHz 512M x 8 DDR3 I-Temp
на замовлення 106 шт:
термін постачання 21-30 дні (днів)AS4C512M8D3LB-12BINTR |
Виробник: Alliance Memory
DRAM 4G 1.35V 800MHz 512M x 8 DDR3 I-Temp
DRAM 4G 1.35V 800MHz 512M x 8 DDR3 I-Temp
товар відсутній
AS4C512M8D3LC-12BAN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA78
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 1.35V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA78
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 1.35V
товар відсутній
AS4C512M8D3LC-12BANTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA78
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Operating voltage: 1.35V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA78
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Operating voltage: 1.35V
товар відсутній
AS4C512M8D3LC-12BCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA78
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: in-tray
Operating voltage: 1.35V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA78
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: in-tray
Operating voltage: 1.35V
товар відсутній
AS4C512M8D3LC-12BCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA78
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: reel
Operating voltage: 1.35V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA78
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: reel
Operating voltage: 1.35V
товар відсутній
AS4C512M8D3LC-12BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA78
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: in-tray
Operating voltage: 1.35V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA78
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: in-tray
Operating voltage: 1.35V
товар відсутній
AS4C512M8D3LC-12BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA78
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 1.35V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA78
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 1.35V
товар відсутній
AS4C512M8D3LC-10BAN |
Виробник: Alliance Memory
DRAM DDR3, 4G, 512M x 8, 1.35V, 96-BALL FBGA, 933MHZ, Automotive Temp - Tray
DRAM DDR3, 4G, 512M x 8, 1.35V, 96-BALL FBGA, 933MHZ, Automotive Temp - Tray
товар відсутній
AS4C512M8D3LC-10BANTR |
Виробник: Alliance Memory
DRAM DDR3, 4G, 512M x 8, 1.35V, 96-BALL FBGA, 933MHZ, Automotive Temp - Tape & Reel
DRAM DDR3, 4G, 512M x 8, 1.35V, 96-BALL FBGA, 933MHZ, Automotive Temp - Tape & Reel
товар відсутній
AS4C512M8D3LC-12BAN |
Виробник: Alliance Memory
DRAM DDR3, 4G, 512M x 8, 1.35V, 78-Ball FBGA, 800 MHz, Automotive Temp - Tray
DRAM DDR3, 4G, 512M x 8, 1.35V, 78-Ball FBGA, 800 MHz, Automotive Temp - Tray
товар відсутній
AS4C512M8D3LC-12BAN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA78
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 1.35V
кількість в упаковці: 220 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA78
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating voltage: 1.35V
кількість в упаковці: 220 шт
товар відсутній
AS4C512M8D3LC-12BANTR |
Виробник: Alliance Memory
DRAM DDR3, 4G, 512M x 8, 1.35V, 78-Ball FBGA, 800 MHz, Automotive Temp - Tape & Reel
DRAM DDR3, 4G, 512M x 8, 1.35V, 78-Ball FBGA, 800 MHz, Automotive Temp - Tape & Reel
товар відсутній
AS4C512M8D3LC-12BANTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA78
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Operating voltage: 1.35V
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA78
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel
Operating voltage: 1.35V
кількість в упаковці: 2500 шт
товар відсутній
AS4C512M8D3LC-12BCN |
Виробник: ALLIANCE MEMORY
Description: ALLIANCE MEMORY - AS4C512M8D3LC-12BCN - DRAM, DDR3, 4 Gbit, 512M x 8 Bit, 800 MHz, FBGA, 78 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: DDR3
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: FBGA
Speicherdichte: 4Gbit
usEccn: EAR99
Versorgungsspannung, nom.: 1.35V
Taktfrequenz, max.: 800MHz
Betriebstemperatur, min.: -
euEccn: NLR
Anzahl der Pins: 78Pin(s)
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 95°C
Speicherkonfiguration: 512M x 8 Bit
SVHC: No SVHC (27-Jun-2024)
Description: ALLIANCE MEMORY - AS4C512M8D3LC-12BCN - DRAM, DDR3, 4 Gbit, 512M x 8 Bit, 800 MHz, FBGA, 78 Pin(s)
tariffCode: 85423231
DRAM-Ausführung: DDR3
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
IC-Gehäuse / Bauform: FBGA
Speicherdichte: 4Gbit
usEccn: EAR99
Versorgungsspannung, nom.: 1.35V
Taktfrequenz, max.: 800MHz
Betriebstemperatur, min.: -
euEccn: NLR
Anzahl der Pins: 78Pin(s)
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 95°C
Speicherkonfiguration: 512M x 8 Bit
SVHC: No SVHC (27-Jun-2024)
на замовлення 242 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 901.36 грн |
10+ | 769.82 грн |
25+ | 691.55 грн |
50+ | 606.94 грн |
100+ | 527.05 грн |
AS4C512M8D3LC-12BCN |
Виробник: Alliance Memory
DRAM DDR3, 4G, 512M x 8, 1.35V, 78-Ball FBGA, 800 MHz, Commercial Temp - Tray
DRAM DDR3, 4G, 512M x 8, 1.35V, 78-Ball FBGA, 800 MHz, Commercial Temp - Tray
на замовлення 61 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 845.94 грн |
10+ | 772.64 грн |
25+ | 625.1 грн |
100+ | 539.5 грн |
242+ | 524.39 грн |
484+ | 520.8 грн |
968+ | 507.85 грн |
AS4C512M8D3LC-12BCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA78
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: in-tray
Operating voltage: 1.35V
кількість в упаковці: 220 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA78
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: in-tray
Operating voltage: 1.35V
кількість в упаковці: 220 шт
товар відсутній
AS4C512M8D3LC-12BCNTR |
Виробник: Alliance Memory
DRAM DDR3, 4G, 512M x 8, 1.35V, 78-Ball FBGA, 800 MHz, Commercial Temp - Tape & Reel
DRAM DDR3, 4G, 512M x 8, 1.35V, 78-Ball FBGA, 800 MHz, Commercial Temp - Tape & Reel
товар відсутній
AS4C512M8D3LC-12BCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA78
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: reel
Operating voltage: 1.35V
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA78
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: reel
Operating voltage: 1.35V
кількість в упаковці: 2500 шт
товар відсутній
AS4C512M8D3LC-12BIN |
Виробник: Alliance Memory
DRAM DDR3, 4G, 512M x 8, 1.35V, 78-Ball FBGA, 800 MHz, Industrial Temp - Tray
DRAM DDR3, 4G, 512M x 8, 1.35V, 78-Ball FBGA, 800 MHz, Industrial Temp - Tray
на замовлення 904 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 863.56 грн |
10+ | 788.35 грн |
25+ | 586.98 грн |
100+ | 551.73 грн |
242+ | 540.22 грн |
484+ | 532.31 грн |
968+ | 530.15 грн |
AS4C512M8D3LC-12BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA78
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: in-tray
Operating voltage: 1.35V
кількість в упаковці: 220 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA78
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: in-tray
Operating voltage: 1.35V
кількість в упаковці: 220 шт
товар відсутній
AS4C512M8D3LC-12BINTR |
Виробник: Alliance Memory
DRAM DDR3, 4G, 512M x 8, 1.35V, 78-Ball FBGA, 800 MHz, Industrial Temp - Tape & Reel
DRAM DDR3, 4G, 512M x 8, 1.35V, 78-Ball FBGA, 800 MHz, Industrial Temp - Tape & Reel
товар відсутній
AS4C512M8D3LC-12BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA78
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 1.35V
кількість в упаковці: 2500 шт
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR3L; SDRAM
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Clock frequency: 800MHz
Access time: 13.75ns
Case: FBGA78
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 1.35V
кількість в упаковці: 2500 шт
товар відсутній
AS4C512M8D4-75BCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR4; SDRAM
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Clock frequency: 1333MHz
Access time: 14.25ns
Case: FBGA78
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: in-tray
Operating voltage: 1.2V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR4; SDRAM
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Clock frequency: 1333MHz
Access time: 14.25ns
Case: FBGA78
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: in-tray
Operating voltage: 1.2V
товар відсутній
AS4C512M8D4-75BCNTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR4; SDRAM
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Clock frequency: 1333MHz
Access time: 14.25ns
Case: FBGA78
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: reel
Operating voltage: 1.2V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR4; SDRAM
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Clock frequency: 1333MHz
Access time: 14.25ns
Case: FBGA78
Mounting: SMD
Operating temperature: 0...95°C
Kind of package: reel
Operating voltage: 1.2V
товар відсутній
AS4C512M8D4-75BIN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR4; SDRAM
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Clock frequency: 1333MHz
Access time: 14.25ns
Case: FBGA78
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: in-tray
Operating voltage: 1.2V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR4; SDRAM
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Clock frequency: 1333MHz
Access time: 14.25ns
Case: FBGA78
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: in-tray
Operating voltage: 1.2V
товар відсутній
AS4C512M8D4-75BINTR |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR4; SDRAM
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Clock frequency: 1333MHz
Access time: 14.25ns
Case: FBGA78
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 1.2V
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1333MHz; 14.25ns; FBGA78
Type of integrated circuit: DRAM memory
Kind of memory: DDR4; SDRAM
Memory: 4Gb DRAM
Memory organisation: 512Mx8bit
Clock frequency: 1333MHz
Access time: 14.25ns
Case: FBGA78
Mounting: SMD
Operating temperature: -40...95°C
Kind of package: reel
Operating voltage: 1.2V
товар відсутній
AS4C512M8D4-83BCN |
Виробник: ALLIANCE MEMORY
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1.2GHz; 14.16ns; FBGA78
Memory: 4Gb DRAM
Clock frequency: 1.2GHz
Operating temperature: 0...95°C
Kind of memory: DDR4; SDRAM
Operating voltage: 1.2V
Mounting: SMD
Case: FBGA78
Type of integrated circuit: DRAM memory
Memory organisation: 512Mx8bit
Access time: 14.16ns
Kind of package: in-tray
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1.2GHz; 14.16ns; FBGA78
Memory: 4Gb DRAM
Clock frequency: 1.2GHz
Operating temperature: 0...95°C
Kind of memory: DDR4; SDRAM
Operating voltage: 1.2V
Mounting: SMD
Case: FBGA78
Type of integrated circuit: DRAM memory
Memory organisation: 512Mx8bit
Access time: 14.16ns
Kind of package: in-tray
товар відсутній