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AS4C4M16SA-6TANTR ALLIANCE MEMORY
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Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP54 II
Mounting: SMD
Case: TSOP54 II
Kind of package: reel
Operating temperature: -40...105°C
Memory: 64Mb DRAM
Operating voltage: 3.3V
Type of integrated circuit: DRAM memory
Kind of memory: SDRAM
Memory organisation: 4Mx16bit
Access time: 5.4ns
Clock frequency: 166MHz
кількість в упаковці: 1000 шт
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Технічний опис AS4C4M16SA-6TANTR ALLIANCE MEMORY
Description: IC DRAM 64MBIT PAR 54TSOP II, Packaging: Tape & Reel (TR), Package / Case: 54-TSOP (0.400", 10.16mm Width), Mounting Type: Surface Mount, Memory Size: 64Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 105°C (TA), Voltage - Supply: 3V ~ 3.6V, Technology: SDRAM, Clock Frequency: 166 MHz, Memory Format: DRAM, Supplier Device Package: 54-TSOP II, Grade: Automotive, Write Cycle Time - Word, Page: 2ns, Memory Interface: Parallel, Access Time: 5.4 ns, Memory Organization: 4M x 16, DigiKey Programmable: Not Verified, Qualification: AEC-Q100.
Інші пропозиції AS4C4M16SA-6TANTR
Фото | Назва | Виробник | Інформація |
Доступність |
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AS4C4M16SA-6TANTR | Виробник : Alliance Memory, Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 54-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 3V ~ 3.6V Technology: SDRAM Clock Frequency: 166 MHz Memory Format: DRAM Supplier Device Package: 54-TSOP II Grade: Automotive Write Cycle Time - Word, Page: 2ns Memory Interface: Parallel Access Time: 5.4 ns Memory Organization: 4M x 16 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
товар відсутній |
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AS4C4M16SA-6TANTR | Виробник : Alliance Memory |
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товар відсутній |
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AS4C4M16SA-6TANTR | Виробник : ALLIANCE MEMORY |
![]() Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 166MHz; 5.4ns; TSOP54 II Mounting: SMD Case: TSOP54 II Kind of package: reel Operating temperature: -40...105°C Memory: 64Mb DRAM Operating voltage: 3.3V Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory organisation: 4Mx16bit Access time: 5.4ns Clock frequency: 166MHz |
товар відсутній |