SI8416DB-T2-E1 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N-CH 8V 16A 6MICRO FOOT
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 4 V
Description: MOSFET N-CH 8V 16A 6MICRO FOOT
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 4 V
на замовлення 7042 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
7+ | 50.16 грн |
10+ | 41.74 грн |
100+ | 28.9 грн |
500+ | 22.66 грн |
1000+ | 19.29 грн |
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Технічний опис SI8416DB-T2-E1 Vishay Siliconix
Description: MOSFET N-CH 8V 16A 6MICRO FOOT, Packaging: Tape & Reel (TR), Package / Case: 6-UFBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 23mOhm @ 1.5A, 4.5V, Power Dissipation (Max): 2.77W (Ta), 13W (Tc), Vgs(th) (Max) @ Id: 800mV @ 250µA, Supplier Device Package: 6-Micro Foot™ (1.5x1), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±5V, Drain to Source Voltage (Vdss): 8 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 4 V.
Інші пропозиції SI8416DB-T2-E1 за ціною від 20.5 грн до 53.42 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||
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SI8416DB-T2-E1 | Виробник : Vishay Semiconductors | MOSFET 8V Vds 5V Vgs MICRO FOOT 1.5 x 1 |
на замовлення 3661 шт: термін постачання 21-30 дні (днів) |
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SI8416DB-T2-E1 | Виробник : Vishay | Trans MOSFET N-CH 8V 16A 6-Pin Micro Foot T/R |
товар відсутній |
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SI8416DB-T2-E1 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 16A; Idm: 20A; 13W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 8V Drain current: 16A Pulsed drain current: 20A Power dissipation: 13W Gate-source voltage: ±5V On-state resistance: 95mΩ Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
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SI8416DB-T2-E1 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 8V 16A 6MICRO FOOT Packaging: Tape & Reel (TR) Package / Case: 6-UFBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 1.5A, 4.5V Power Dissipation (Max): 2.77W (Ta), 13W (Tc) Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: 6-Micro Foot™ (1.5x1) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±5V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 4 V |
товар відсутній |
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SI8416DB-T2-E1 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 16A; Idm: 20A; 13W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 8V Drain current: 16A Pulsed drain current: 20A Power dissipation: 13W Gate-source voltage: ±5V On-state resistance: 95mΩ Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |