Продукція > VISHAY SILICONIX > Всі товари виробника VISHAY SILICONIX (10975) > Сторінка 152 з 183
Фото | Назва | Виробник | Інформація |
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SUP10250E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 250V 63A TO220AB |
на замовлення 290 шт: термін постачання 21-31 дні (днів) |
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SIS890ADN-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 7.6A/24.7A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 24.7A (Tc) Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V Power Dissipation (Max): 3.6W (Ta), 39W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 50 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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SIS890ADN-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 7.6A/24.7A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 24.7A (Tc) Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V Power Dissipation (Max): 3.6W (Ta), 39W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 50 V |
на замовлення 6385 шт: термін постачання 21-31 дні (днів) |
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SIC453ED-T1-GE3 | Vishay Siliconix |
Description: IC REG BCK ADJ POWERPAK MLP34-57 Packaging: Cut Tape (CT) Package / Case: 34-PowerWFQFN Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 15A Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 300kHz ~ 1.5MHz Voltage - Input (Max): 20V Topology: Buck Supplier Device Package: PowerPAK® MLP34-57 Synchronous Rectifier: Yes Voltage - Output (Max): 12V Voltage - Input (Min): 4.5V Voltage - Output (Min/Fixed): 0.3V Part Status: Active |
на замовлення 5481 шт: термін постачання 21-31 дні (днів) |
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SQJA82EP-T1_GE3 | Vishay Siliconix | Description: MOSFET N-CH 80V 60A PPAK SO-8 |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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SQJA82EP-T1_GE3 | Vishay Siliconix | Description: MOSFET N-CH 80V 60A PPAK SO-8 |
на замовлення 13956 шт: термін постачання 21-31 дні (днів) |
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SQJQ410EL-T1_GE3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 135A PPAK 8 X 8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 8 x 8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 135A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7350 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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SQJQ410EL-T1_GE3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 135A PPAK 8 X 8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 8 x 8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 135A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7350 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 318 шт: термін постачання 21-31 дні (днів) |
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SI2304DDS-T1-BE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 3.3A/3.6A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 3.6A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.2A, 10V Power Dissipation (Max): 1.1W (Ta), 1.7W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 15 V |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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SI2304DDS-T1-BE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 3.3A/3.6A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 3.6A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.2A, 10V Power Dissipation (Max): 1.1W (Ta), 1.7W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 15 V |
на замовлення 12378 шт: термін постачання 21-31 дні (днів) |
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SQJA37EP-T1_GE3 | Vishay Siliconix |
Description: MOSFET P-CH 30V 30A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 9.2mOhm @ 6A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SQJA37EP-T1_GE3 | Vishay Siliconix |
Description: MOSFET P-CH 30V 30A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 9.2mOhm @ 6A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 4857 шт: термін постачання 21-31 дні (днів) |
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SQJQ910EL-T1_GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 100V 70A PPAK8X8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 8 x 8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 187W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2832pF @ 50V Rds On (Max) @ Id, Vgs: 8.6mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Dual Grade: Automotive Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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SQJQ910EL-T1_GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 100V 70A PPAK8X8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 8 x 8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 187W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2832pF @ 50V Rds On (Max) @ Id, Vgs: 8.6mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Dual Grade: Automotive Qualification: AEC-Q101 |
на замовлення 6232 шт: термін постачання 21-31 дні (днів) |
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SIHFPS38N60L-GE3 | Vishay Siliconix |
Description: POWER MOSFET SUPER-247, 150 M @ Packaging: Tube Package / Case: TO-274AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 23A, 10V Power Dissipation (Max): 540W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: SUPER-247™ (TO-274AA) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7990 pF @ 25 V |
на замовлення 475 шт: термін постачання 21-31 дні (днів) |
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SQJ136ELP-T1_GE3 | Vishay Siliconix | Description: MOSFET N-CH 40V 350A PPAK SO-8 |
товару немає в наявності |
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SUM70030M-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 150A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263-7 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10870 pF @ 50 V |
товару немає в наявності |
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SIHJ690N60E-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 600V 5.6A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc) Rds On (Max) @ Id, Vgs: 700mOhm @ 2A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 347 pF @ 100 V |
товару немає в наявності |
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SIHJ690N60E-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 600V 5.6A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc) Rds On (Max) @ Id, Vgs: 700mOhm @ 2A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 347 pF @ 100 V |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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SUP90100E-GE3 | Vishay Siliconix |
Description: N-CHANNEL 200 V (D-S) MOSFET TO- Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 10.9mOhm @ 16A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3930 pF @ 100 V |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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SiR616DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 200V 20.2A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc) Rds On (Max) @ Id, Vgs: 50.5mOhm @ 10A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 7.5 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 100 V |
товару немає в наявності |
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SiR616DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 200V 20.2A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc) Rds On (Max) @ Id, Vgs: 50.5mOhm @ 10A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 7.5 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 100 V |
товару немає в наявності |
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SI7190ADP-T1-RE3 | Vishay Siliconix |
Description: MOSFET N-CH 250V 4.3A/14.4A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 14.4A (Tc) Rds On (Max) @ Id, Vgs: 102mOhm @ 4.3A, 10V Power Dissipation (Max): 5W (Ta), 56.8W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 100 V |
товару немає в наявності |
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SIRA50DP-T1-RE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 62.5A/100A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62.5A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 194 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8445 pF @ 20 V |
товару немає в наявності |
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SIHFPS40N60K-GE3 | Vishay Siliconix |
Description: POWER MOSFET SUPER-247, 130 M @ Packaging: Tube Package / Case: TO-274AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 24A, 10V Power Dissipation (Max): 570W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: SUPER-247™ (TO-274AA) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7970 pF @ 25 V |
товару немає в наявності |
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SIRA64DP-T1-RE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 60A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 10A, 10V Power Dissipation (Max): 27.8W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 15 V |
товару немає в наявності |
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SISS76LDN-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 70V 19.6A/67.4A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8SH Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19.6A (Ta), 67.4A (Tc) Rds On (Max) @ Id, Vgs: 6.25mOhm @ 10A, 4.5V Power Dissipation (Max): 4.8W (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: PowerPAK® 1212-8SH Drive Voltage (Max Rds On, Min Rds On): 3.3V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 70 V Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 35 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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SISS76LDN-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 70V 19.6A/67.4A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8SH Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19.6A (Ta), 67.4A (Tc) Rds On (Max) @ Id, Vgs: 6.25mOhm @ 10A, 4.5V Power Dissipation (Max): 4.8W (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: PowerPAK® 1212-8SH Drive Voltage (Max Rds On, Min Rds On): 3.3V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 70 V Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 35 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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SIHA105N60EF-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 600V 12A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 102mOhm @ 13A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1804 pF @ 100 V |
на замовлення 1033 шт: термін постачання 21-31 дні (днів) |
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SIHB105N60EF-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 600V 29A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 102mOhm @ 13A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1804 pF @ 100 V |
на замовлення 5691 шт: термін постачання 21-31 дні (днів) |
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SIHG105N60EF-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 600V 29A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 102mOhm @ 13A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1804 pF @ 100 V |
на замовлення 367 шт: термін постачання 21-31 дні (днів) |
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SQJQ148ER-T1_GE3 | Vishay Siliconix |
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S) Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 8 x 8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 372A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V Power Dissipation (Max): 394W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5750 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
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SQJQ148ER-T1_GE3 | Vishay Siliconix |
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S) Packaging: Cut Tape (CT) Package / Case: PowerPAK® 8 x 8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 372A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V Power Dissipation (Max): 394W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5750 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 1738 шт: термін постачання 21-31 дні (днів) |
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SIHS90N65E-GE3 | Vishay Siliconix |
Description: E SERIES POWER MOSFET SUPER-247, Packaging: Tube Package / Case: TO-274AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 87A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 45A, 10V Power Dissipation (Max): 625W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SUPER-247™ (TO-274AA) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 591 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11826 pF @ 100 V |
на замовлення 233 шт: термін постачання 21-31 дні (днів) |
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SISS54DN-T1-GE3 | Vishay Siliconix |
Description: N-CHANNEL 30-V (D-S) MOSFET POWE Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51.1A (Ta), 185.6A (Tc) Rds On (Max) @ Id, Vgs: 1.06mOhm @ 20A, 10V Power Dissipation (Max): 5W (Ta), 65.7W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® 1212-8S Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +16V, -12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 15 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SISS54DN-T1-GE3 | Vishay Siliconix |
Description: N-CHANNEL 30-V (D-S) MOSFET POWE Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51.1A (Ta), 185.6A (Tc) Rds On (Max) @ Id, Vgs: 1.06mOhm @ 20A, 10V Power Dissipation (Max): 5W (Ta), 65.7W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® 1212-8S Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +16V, -12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 15 V |
на замовлення 6089 шт: термін постачання 21-31 дні (днів) |
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SIHP15N80AEF-GE3 | Vishay Siliconix |
Description: EF SERIES POWER MOSFET WITH FAST Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 6.5A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1128 pF @ 100 V |
на замовлення 2161 шт: термін постачання 21-31 дні (днів) |
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SIA929DJ-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2P-CH 30V 4.5A SC70-6 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SC-70-6 Dual Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 7.8W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 15V Rds On (Max) @ Id, Vgs: 64mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Dual Part Status: Active |
товару немає в наявності |
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SIA929DJ-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2P-CH 30V 4.5A SC70-6 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-70-6 Dual Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 7.8W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 15V Rds On (Max) @ Id, Vgs: 64mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Dual Part Status: Active |
на замовлення 1141 шт: термін постачання 21-31 дні (днів) |
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IRFZ20PBF-BE3 | Vishay Siliconix |
Description: MOSFET N-CH 50V 15A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V |
на замовлення 639 шт: термін постачання 21-31 дні (днів) |
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SQ3461EV-T1_GE3 | Vishay Siliconix |
Description: MOSFET P-CHANNEL 12V 8A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 7.9A, 4.5V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 6 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SQ3461EV-T1_GE3 | Vishay Siliconix |
Description: MOSFET P-CHANNEL 12V 8A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 7.9A, 4.5V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 6 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 5915 шт: термін постачання 21-31 дні (днів) |
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SIHB053N60E-GE3 | Vishay Siliconix |
Description: E SERIES POWER MOSFET D2PAK (TO- Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 54mOhm @ 26.5A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3722 pF @ 100 V |
на замовлення 1010 шт: термін постачання 21-31 дні (днів) |
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SI1302DL-T1-BE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 600MA SC70-3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 600mA (Ta) Rds On (Max) @ Id, Vgs: 480mOhm @ 600mA, 10V Power Dissipation (Max): 280mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SC-70-3 Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SI1302DL-T1-BE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 600MA SC70-3 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 600mA (Ta) Rds On (Max) @ Id, Vgs: 480mOhm @ 600mA, 10V Power Dissipation (Max): 280mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SC-70-3 Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V |
на замовлення 3003 шт: термін постачання 21-31 дні (днів) |
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SIHF9540PBF | Vishay Siliconix |
Description: MOSFET P-CH 100V TO-220AB Packaging: Tube Part Status: Active |
товару немає в наявності |
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SIHD3N50D-BE3 | Vishay Siliconix |
Description: MOSFET N-CH 500V 3A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 3.2Ohm @ 1.5A, 10V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 100 V |
товару немає в наявності |
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SIP12117DMP-T1-GE4 | Vishay Siliconix |
Description: IC REG BUCK ADJ 3A 10DFN Packaging: Tape & Reel (TR) Package / Case: 10-VFDFN Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 3A Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 600kHz Voltage - Input (Max): 15V Topology: Buck Supplier Device Package: 10-DFN (3x3) Synchronous Rectifier: Yes Voltage - Output (Max): 5.5V Voltage - Input (Min): 4.5V Voltage - Output (Min/Fixed): 0.6V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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SIP12117DMP-T1-GE4 | Vishay Siliconix |
Description: IC REG BUCK ADJ 3A 10DFN Packaging: Cut Tape (CT) Package / Case: 10-VFDFN Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 3A Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 600kHz Voltage - Input (Max): 15V Topology: Buck Supplier Device Package: 10-DFN (3x3) Synchronous Rectifier: Yes Voltage - Output (Max): 5.5V Voltage - Input (Min): 4.5V Voltage - Output (Min/Fixed): 0.6V |
на замовлення 4978 шт: термін постачання 21-31 дні (днів) |
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SIHU6N80AE-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 800V 5A TO251AA Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-251AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 100 V |
товару немає в наявності |
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SIS178LDN-T1-GE3 | Vishay Siliconix |
Description: N-CHANNEL 70 V (D-S) MOSFET POWE Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.9A (Ta), 45.3A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V Power Dissipation (Max): 3.6W (Ta), 39W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 70 V Gate Charge (Qg) (Max) @ Vgs: 28.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1135 pF @ 35 V |
на замовлення 2802 шт: термін постачання 21-31 дні (днів) |
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SIS176LDN-T1-GE3 | Vishay Siliconix |
Description: N-CHANNEL 70 V (D-S) MOSFET POWE Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.9A (Ta), 42.3A (Tc) Rds On (Max) @ Id, Vgs: 10.9mOhm @ 10A, 4.5V Power Dissipation (Max): 3.6W (Ta), 39W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 3.3V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 70 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 35 V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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SIS176LDN-T1-GE3 | Vishay Siliconix |
Description: N-CHANNEL 70 V (D-S) MOSFET POWE Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.9A (Ta), 42.3A (Tc) Rds On (Max) @ Id, Vgs: 10.9mOhm @ 10A, 4.5V Power Dissipation (Max): 3.6W (Ta), 39W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 3.3V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 70 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 35 V |
на замовлення 17023 шт: термін постачання 21-31 дні (днів) |
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SUM70030M-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 150A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263-7 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10870 pF @ 50 V |
на замовлення 293 шт: термін постачання 21-31 дні (днів) |
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SUM70042E-GE3 | Vishay Siliconix |
Description: N-CHANNEL 100-V (D-S) MOSFET D2P Packaging: Strip Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6490 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1929 шт: термін постачання 21-31 дні (днів) |
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SIHG026N60EF-GE3 | Vishay Siliconix |
Description: EF SERIES POWER MOSFET WITH FAST Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 38A, 10V Power Dissipation (Max): 521W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7926 pF @ 100 V |
на замовлення 238 шт: термін постачання 21-31 дні (днів) |
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IRF610STRLPBF | Vishay Siliconix |
Description: MOSFET N-CH 200V 3.3A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2A, 10V Power Dissipation (Max): 3W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V |
товару немає в наявності |
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IRF610STRLPBF | Vishay Siliconix |
Description: MOSFET N-CH 200V 3.3A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2A, 10V Power Dissipation (Max): 3W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V |
на замовлення 677 шт: термін постачання 21-31 дні (днів) |
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SIHA17N80AEF-GE3 | Vishay Siliconix |
Description: EF SERIES POWER MOSFET WITH FAST Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 305mOhm @ 8.5A, 10V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 100 V |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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SQJ488EP-T1_BE3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 42A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 7.1A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 978 pF @ 50 V |
товару немає в наявності |
SUP10250E-GE3 |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 250V 63A TO220AB
Description: MOSFET N-CH 250V 63A TO220AB
на замовлення 290 шт:
термін постачання 21-31 дні (днів)SIS890ADN-T1-GE3 |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 7.6A/24.7A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 24.7A (Tc)
Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 50 V
Description: MOSFET N-CH 100V 7.6A/24.7A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 24.7A (Tc)
Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 50 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 25.06 грн |
6000+ | 22.86 грн |
SIS890ADN-T1-GE3 |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 7.6A/24.7A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 24.7A (Tc)
Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 50 V
Description: MOSFET N-CH 100V 7.6A/24.7A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 24.7A (Tc)
Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 50 V
на замовлення 6385 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 66.02 грн |
10+ | 55 грн |
100+ | 38.1 грн |
500+ | 29.87 грн |
1000+ | 25.43 грн |
SIC453ED-T1-GE3 |
Виробник: Vishay Siliconix
Description: IC REG BCK ADJ POWERPAK MLP34-57
Packaging: Cut Tape (CT)
Package / Case: 34-PowerWFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 15A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 300kHz ~ 1.5MHz
Voltage - Input (Max): 20V
Topology: Buck
Supplier Device Package: PowerPAK® MLP34-57
Synchronous Rectifier: Yes
Voltage - Output (Max): 12V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.3V
Part Status: Active
Description: IC REG BCK ADJ POWERPAK MLP34-57
Packaging: Cut Tape (CT)
Package / Case: 34-PowerWFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 15A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 300kHz ~ 1.5MHz
Voltage - Input (Max): 20V
Topology: Buck
Supplier Device Package: PowerPAK® MLP34-57
Synchronous Rectifier: Yes
Voltage - Output (Max): 12V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.3V
Part Status: Active
на замовлення 5481 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 375.41 грн |
10+ | 266.51 грн |
25+ | 242.63 грн |
100+ | 203.07 грн |
250+ | 191.33 грн |
500+ | 184.24 грн |
1000+ | 175.49 грн |
SQJA82EP-T1_GE3 |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 80V 60A PPAK SO-8
Description: MOSFET N-CH 80V 60A PPAK SO-8
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)SQJA82EP-T1_GE3 |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 80V 60A PPAK SO-8
Description: MOSFET N-CH 80V 60A PPAK SO-8
на замовлення 13956 шт:
термін постачання 21-31 дні (днів)SQJQ410EL-T1_GE3 |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 135A PPAK 8 X 8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7350 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 135A PPAK 8 X 8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7350 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
SQJQ410EL-T1_GE3 |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 135A PPAK 8 X 8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7350 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 135A PPAK 8 X 8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7350 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 318 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 206.52 грн |
10+ | 167.08 грн |
100+ | 135.15 грн |
SI2304DDS-T1-BE3 |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 3.3A/3.6A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.2A, 10V
Power Dissipation (Max): 1.1W (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 15 V
Description: MOSFET N-CH 30V 3.3A/3.6A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.2A, 10V
Power Dissipation (Max): 1.1W (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 15 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 7.63 грн |
6000+ | 7.04 грн |
9000+ | 6.34 грн |
SI2304DDS-T1-BE3 |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 3.3A/3.6A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.2A, 10V
Power Dissipation (Max): 1.1W (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 15 V
Description: MOSFET N-CH 30V 3.3A/3.6A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.2A, 10V
Power Dissipation (Max): 1.1W (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 15 V
на замовлення 12378 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 28.41 грн |
14+ | 21.14 грн |
100+ | 12.68 грн |
500+ | 11.01 грн |
1000+ | 7.49 грн |
SQJA37EP-T1_GE3 |
Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V 30A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 6A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET P-CH 30V 30A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 6A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 25.09 грн |
SQJA37EP-T1_GE3 |
Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V 30A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 6A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET P-CH 30V 30A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 6A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V
Qualification: AEC-Q101
на замовлення 4857 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 60.65 грн |
10+ | 47.83 грн |
100+ | 37.18 грн |
500+ | 29.57 грн |
1000+ | 24.09 грн |
SQJQ910EL-T1_GE3 |
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 100V 70A PPAK8X8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 8 x 8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 187W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2832pF @ 50V
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8 Dual
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 100V 70A PPAK8X8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 8 x 8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 187W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2832pF @ 50V
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8 Dual
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2000+ | 82.62 грн |
6000+ | 76.57 грн |
SQJQ910EL-T1_GE3 |
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 100V 70A PPAK8X8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 8 x 8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 187W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2832pF @ 50V
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8 Dual
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 100V 70A PPAK8X8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 8 x 8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 187W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2832pF @ 50V
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8 Dual
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6232 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 183.49 грн |
10+ | 146.53 грн |
100+ | 116.64 грн |
500+ | 92.63 грн |
1000+ | 78.59 грн |
SIHFPS38N60L-GE3 |
Виробник: Vishay Siliconix
Description: POWER MOSFET SUPER-247, 150 M @
Packaging: Tube
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 23A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: SUPER-247™ (TO-274AA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7990 pF @ 25 V
Description: POWER MOSFET SUPER-247, 150 M @
Packaging: Tube
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 23A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: SUPER-247™ (TO-274AA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7990 pF @ 25 V
на замовлення 475 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 377.72 грн |
30+ | 267.3 грн |
SQJ136ELP-T1_GE3 |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 350A PPAK SO-8
Description: MOSFET N-CH 40V 350A PPAK SO-8
товару немає в наявності
SUM70030M-GE3 |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 150A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10870 pF @ 50 V
Description: MOSFET N-CH 100V 150A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10870 pF @ 50 V
товару немає в наявності
SIHJ690N60E-T1-GE3 |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 5.6A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 2A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 347 pF @ 100 V
Description: MOSFET N-CH 600V 5.6A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 2A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 347 pF @ 100 V
товару немає в наявності
SIHJ690N60E-T1-GE3 |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 5.6A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 2A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 347 pF @ 100 V
Description: MOSFET N-CH 600V 5.6A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 2A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 347 pF @ 100 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 133.58 грн |
SUP90100E-GE3 |
Виробник: Vishay Siliconix
Description: N-CHANNEL 200 V (D-S) MOSFET TO-
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 10.9mOhm @ 16A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3930 pF @ 100 V
Description: N-CHANNEL 200 V (D-S) MOSFET TO-
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 10.9mOhm @ 16A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3930 pF @ 100 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 247.21 грн |
SiR616DP-T1-GE3 |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 20.2A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 50.5mOhm @ 10A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 7.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 100 V
Description: MOSFET N-CH 200V 20.2A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 50.5mOhm @ 10A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 7.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 100 V
товару немає в наявності
SiR616DP-T1-GE3 |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 20.2A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 50.5mOhm @ 10A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 7.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 100 V
Description: MOSFET N-CH 200V 20.2A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 50.5mOhm @ 10A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 7.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 100 V
товару немає в наявності
SI7190ADP-T1-RE3 |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 250V 4.3A/14.4A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 14.4A (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 4.3A, 10V
Power Dissipation (Max): 5W (Ta), 56.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 100 V
Description: MOSFET N-CH 250V 4.3A/14.4A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 14.4A (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 4.3A, 10V
Power Dissipation (Max): 5W (Ta), 56.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 100 V
товару немає в наявності
SIRA50DP-T1-RE3 |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 62.5A/100A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62.5A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 194 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8445 pF @ 20 V
Description: MOSFET N-CH 40V 62.5A/100A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62.5A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 194 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8445 pF @ 20 V
товару немає в наявності
SIHFPS40N60K-GE3 |
Виробник: Vishay Siliconix
Description: POWER MOSFET SUPER-247, 130 M @
Packaging: Tube
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 24A, 10V
Power Dissipation (Max): 570W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: SUPER-247™ (TO-274AA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7970 pF @ 25 V
Description: POWER MOSFET SUPER-247, 130 M @
Packaging: Tube
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 24A, 10V
Power Dissipation (Max): 570W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: SUPER-247™ (TO-274AA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7970 pF @ 25 V
товару немає в наявності
SIRA64DP-T1-RE3 |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 10A, 10V
Power Dissipation (Max): 27.8W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 15 V
Description: MOSFET N-CH 30V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 10A, 10V
Power Dissipation (Max): 27.8W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 15 V
товару немає в наявності
SISS76LDN-T1-GE3 |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 70V 19.6A/67.4A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.6A (Ta), 67.4A (Tc)
Rds On (Max) @ Id, Vgs: 6.25mOhm @ 10A, 4.5V
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SH
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 70 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 35 V
Description: MOSFET N-CH 70V 19.6A/67.4A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.6A (Ta), 67.4A (Tc)
Rds On (Max) @ Id, Vgs: 6.25mOhm @ 10A, 4.5V
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SH
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 70 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 35 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 37.42 грн |
6000+ | 34.32 грн |
SISS76LDN-T1-GE3 |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 70V 19.6A/67.4A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.6A (Ta), 67.4A (Tc)
Rds On (Max) @ Id, Vgs: 6.25mOhm @ 10A, 4.5V
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SH
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 70 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 35 V
Description: MOSFET N-CH 70V 19.6A/67.4A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.6A (Ta), 67.4A (Tc)
Rds On (Max) @ Id, Vgs: 6.25mOhm @ 10A, 4.5V
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SH
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 70 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 35 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 90.59 грн |
10+ | 71.27 грн |
100+ | 55.44 грн |
500+ | 44.1 грн |
1000+ | 35.92 грн |
SIHA105N60EF-GE3 |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 12A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 13A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1804 pF @ 100 V
Description: MOSFET N-CH 600V 12A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 13A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1804 pF @ 100 V
на замовлення 1033 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 277.91 грн |
50+ | 148.48 грн |
100+ | 136.32 грн |
500+ | 107.68 грн |
1000+ | 107.19 грн |
SIHB105N60EF-GE3 |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 29A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 13A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1804 pF @ 100 V
Description: MOSFET N-CH 600V 29A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 13A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1804 pF @ 100 V
на замовлення 5691 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 282.52 грн |
50+ | 150.73 грн |
100+ | 138.43 грн |
500+ | 109.41 грн |
1000+ | 109.17 грн |
SIHG105N60EF-GE3 |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 600V 29A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 13A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1804 pF @ 100 V
Description: MOSFET N-CH 600V 29A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 13A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1804 pF @ 100 V
на замовлення 367 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 309.39 грн |
10+ | 207.3 грн |
100+ | 153.19 грн |
SQJQ148ER-T1_GE3 |
Виробник: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 372A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Power Dissipation (Max): 394W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5750 pF @ 25 V
Qualification: AEC-Q101
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 372A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Power Dissipation (Max): 394W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5750 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
SQJQ148ER-T1_GE3 |
Виробник: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 372A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Power Dissipation (Max): 394W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5750 pF @ 25 V
Qualification: AEC-Q101
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 372A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Power Dissipation (Max): 394W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5750 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1738 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 185.02 грн |
10+ | 148.15 грн |
100+ | 117.92 грн |
500+ | 93.64 грн |
1000+ | 79.46 грн |
SIHS90N65E-GE3 |
Виробник: Vishay Siliconix
Description: E SERIES POWER MOSFET SUPER-247,
Packaging: Tube
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 45A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SUPER-247™ (TO-274AA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 591 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11826 pF @ 100 V
Description: E SERIES POWER MOSFET SUPER-247,
Packaging: Tube
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 45A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SUPER-247™ (TO-274AA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 591 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11826 pF @ 100 V
на замовлення 233 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 991.13 грн |
10+ | 765.01 грн |
SISS54DN-T1-GE3 |
Виробник: Vishay Siliconix
Description: N-CHANNEL 30-V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51.1A (Ta), 185.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.06mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 15 V
Description: N-CHANNEL 30-V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51.1A (Ta), 185.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.06mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 44.52 грн |
SISS54DN-T1-GE3 |
Виробник: Vishay Siliconix
Description: N-CHANNEL 30-V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51.1A (Ta), 185.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.06mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 15 V
Description: N-CHANNEL 30-V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51.1A (Ta), 185.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.06mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 15 V
на замовлення 6089 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 130.51 грн |
10+ | 85.39 грн |
100+ | 60.52 грн |
500+ | 46.41 грн |
1000+ | 43.02 грн |
SIHP15N80AEF-GE3 |
Виробник: Vishay Siliconix
Description: EF SERIES POWER MOSFET WITH FAST
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 6.5A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1128 pF @ 100 V
Description: EF SERIES POWER MOSFET WITH FAST
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 6.5A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1128 pF @ 100 V
на замовлення 2161 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 124.37 грн |
50+ | 96.02 грн |
100+ | 79.01 грн |
500+ | 66.94 грн |
SIA929DJ-T1-GE3 |
Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 30V 4.5A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 15V
Rds On (Max) @ Id, Vgs: 64mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
Description: MOSFET 2P-CH 30V 4.5A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 15V
Rds On (Max) @ Id, Vgs: 64mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
товару немає в наявності
SIA929DJ-T1-GE3 |
Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 30V 4.5A SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 15V
Rds On (Max) @ Id, Vgs: 64mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
Description: MOSFET 2P-CH 30V 4.5A SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 15V
Rds On (Max) @ Id, Vgs: 64mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
на замовлення 1141 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 42.22 грн |
10+ | 35.34 грн |
100+ | 24.44 грн |
500+ | 19.17 грн |
1000+ | 16.31 грн |
IRFZ20PBF-BE3 |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 50V 15A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Description: MOSFET N-CH 50V 15A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
на замовлення 639 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 128.98 грн |
50+ | 65.78 грн |
100+ | 59.68 грн |
500+ | 45.74 грн |
SQ3461EV-T1_GE3 |
Виробник: Vishay Siliconix
Description: MOSFET P-CHANNEL 12V 8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.9A, 4.5V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 6 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CHANNEL 12V 8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.9A, 4.5V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 6 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 20.67 грн |
SQ3461EV-T1_GE3 |
Виробник: Vishay Siliconix
Description: MOSFET P-CHANNEL 12V 8A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.9A, 4.5V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 6 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CHANNEL 12V 8A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.9A, 4.5V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 6 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5915 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 54.51 грн |
10+ | 45.39 грн |
100+ | 31.42 грн |
500+ | 24.64 грн |
1000+ | 20.97 грн |
SIHB053N60E-GE3 |
Виробник: Vishay Siliconix
Description: E SERIES POWER MOSFET D2PAK (TO-
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 26.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3722 pF @ 100 V
Description: E SERIES POWER MOSFET D2PAK (TO-
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 26.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3722 pF @ 100 V
на замовлення 1010 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 406.12 грн |
25+ | 243.2 грн |
100+ | 206.4 грн |
500+ | 175.68 грн |
SI1302DL-T1-BE3 |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 600MA SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 480mOhm @ 600mA, 10V
Power Dissipation (Max): 280mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SC-70-3
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Description: MOSFET N-CH 30V 600MA SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 480mOhm @ 600mA, 10V
Power Dissipation (Max): 280mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SC-70-3
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 10.17 грн |
SI1302DL-T1-BE3 |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 600MA SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 480mOhm @ 600mA, 10V
Power Dissipation (Max): 280mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SC-70-3
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Description: MOSFET N-CH 30V 600MA SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 480mOhm @ 600mA, 10V
Power Dissipation (Max): 280mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SC-70-3
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
на замовлення 3003 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 29.94 грн |
12+ | 24.84 грн |
100+ | 17.27 грн |
500+ | 12.65 грн |
1000+ | 10.28 грн |
SIHF9540PBF |
товару немає в наявності
SIHD3N50D-BE3 |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 500V 3A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 3.2Ohm @ 1.5A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 100 V
Description: MOSFET N-CH 500V 3A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 3.2Ohm @ 1.5A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 100 V
товару немає в наявності
SIP12117DMP-T1-GE4 |
Виробник: Vishay Siliconix
Description: IC REG BUCK ADJ 3A 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 600kHz
Voltage - Input (Max): 15V
Topology: Buck
Supplier Device Package: 10-DFN (3x3)
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.6V
Description: IC REG BUCK ADJ 3A 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 600kHz
Voltage - Input (Max): 15V
Topology: Buck
Supplier Device Package: 10-DFN (3x3)
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.6V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 33.76 грн |
SIP12117DMP-T1-GE4 |
Виробник: Vishay Siliconix
Description: IC REG BUCK ADJ 3A 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 600kHz
Voltage - Input (Max): 15V
Topology: Buck
Supplier Device Package: 10-DFN (3x3)
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.6V
Description: IC REG BUCK ADJ 3A 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 600kHz
Voltage - Input (Max): 15V
Topology: Buck
Supplier Device Package: 10-DFN (3x3)
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.6V
на замовлення 4978 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 79.84 грн |
10+ | 68.53 грн |
25+ | 65.03 грн |
100+ | 50.12 грн |
250+ | 46.85 грн |
500+ | 41.4 грн |
1000+ | 32.15 грн |
SIHU6N80AE-GE3 |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 800V 5A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 100 V
Description: MOSFET N-CH 800V 5A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 100 V
товару немає в наявності
SIS178LDN-T1-GE3 |
Виробник: Vishay Siliconix
Description: N-CHANNEL 70 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.9A (Ta), 45.3A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 70 V
Gate Charge (Qg) (Max) @ Vgs: 28.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1135 pF @ 35 V
Description: N-CHANNEL 70 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.9A (Ta), 45.3A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 70 V
Gate Charge (Qg) (Max) @ Vgs: 28.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1135 pF @ 35 V
на замовлення 2802 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 68.33 грн |
10+ | 57 грн |
100+ | 39.46 грн |
500+ | 30.94 грн |
1000+ | 26.34 грн |
SIS176LDN-T1-GE3 |
Виробник: Vishay Siliconix
Description: N-CHANNEL 70 V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.9A (Ta), 42.3A (Tc)
Rds On (Max) @ Id, Vgs: 10.9mOhm @ 10A, 4.5V
Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 70 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 35 V
Description: N-CHANNEL 70 V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.9A (Ta), 42.3A (Tc)
Rds On (Max) @ Id, Vgs: 10.9mOhm @ 10A, 4.5V
Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 70 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 35 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 25.68 грн |
6000+ | 23.55 грн |
9000+ | 22.46 грн |
SIS176LDN-T1-GE3 |
Виробник: Vishay Siliconix
Description: N-CHANNEL 70 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.9A (Ta), 42.3A (Tc)
Rds On (Max) @ Id, Vgs: 10.9mOhm @ 10A, 4.5V
Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 70 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 35 V
Description: N-CHANNEL 70 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.9A (Ta), 42.3A (Tc)
Rds On (Max) @ Id, Vgs: 10.9mOhm @ 10A, 4.5V
Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 70 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 35 V
на замовлення 17023 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 62.19 грн |
10+ | 48.94 грн |
100+ | 38.04 грн |
500+ | 30.26 грн |
1000+ | 24.65 грн |
SUM70030M-GE3 |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 150A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10870 pF @ 50 V
Description: MOSFET N-CH 100V 150A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10870 pF @ 50 V
на замовлення 293 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 238.76 грн |
10+ | 192.66 грн |
100+ | 155.86 грн |
SUM70042E-GE3 |
Виробник: Vishay Siliconix
Description: N-CHANNEL 100-V (D-S) MOSFET D2P
Packaging: Strip
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6490 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: N-CHANNEL 100-V (D-S) MOSFET D2P
Packaging: Strip
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6490 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1929 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 206.52 грн |
10+ | 166.86 грн |
100+ | 135.02 грн |
500+ | 112.64 грн |
1000+ | 96.45 грн |
SIHG026N60EF-GE3 |
Виробник: Vishay Siliconix
Description: EF SERIES POWER MOSFET WITH FAST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 38A, 10V
Power Dissipation (Max): 521W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7926 pF @ 100 V
Description: EF SERIES POWER MOSFET WITH FAST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 38A, 10V
Power Dissipation (Max): 521W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7926 pF @ 100 V
на замовлення 238 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 666.38 грн |
10+ | 547.74 грн |
IRF610STRLPBF |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 3.3A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2A, 10V
Power Dissipation (Max): 3W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Description: MOSFET N-CH 200V 3.3A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2A, 10V
Power Dissipation (Max): 3W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
товару немає в наявності
IRF610STRLPBF |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 3.3A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2A, 10V
Power Dissipation (Max): 3W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Description: MOSFET N-CH 200V 3.3A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2A, 10V
Power Dissipation (Max): 3W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
на замовлення 677 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 137.42 грн |
10+ | 89.82 грн |
100+ | 63.87 грн |
SIHA17N80AEF-GE3 |
Виробник: Vishay Siliconix
Description: EF SERIES POWER MOSFET WITH FAST
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 305mOhm @ 8.5A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 100 V
Description: EF SERIES POWER MOSFET WITH FAST
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 305mOhm @ 8.5A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 100 V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 158.92 грн |
10+ | 105.2 грн |
SQJ488EP-T1_BE3 |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 42A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.1A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 978 pF @ 50 V
Description: MOSFET N-CH 100V 42A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.1A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 978 pF @ 50 V
товару немає в наявності