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IRFR214PBF-BE3 IRFR214PBF-BE3 Vishay Siliconix sihfr214.pdf Description: MOSFET N-CH 250V 2.2A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.3A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
на замовлення 1286 шт:
термін постачання 21-31 дні (днів)
5+70.03 грн
75+ 54.54 грн
150+ 43.21 грн
525+ 34.38 грн
1050+ 34 грн
Мінімальне замовлення: 5
SQJ411EP-T1_GE3 SQJ411EP-T1_GE3 Vishay Siliconix sqj411ep.pdf Description: MOSFET P-CH 12V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 15A, 4.5V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 6 V
товар відсутній
SQJ411EP-T1_GE3 SQJ411EP-T1_GE3 Vishay Siliconix sqj411ep.pdf Description: MOSFET P-CH 12V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 15A, 4.5V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 6 V
на замовлення 2994 шт:
термін постачання 21-31 дні (днів)
4+91.82 грн
10+ 72.08 грн
100+ 56.03 грн
500+ 44.57 грн
1000+ 36.31 грн
Мінімальне замовлення: 4
SI7110DN-T1-GE3 SI7110DN-T1-GE3 Vishay Siliconix si7110dn.pdf Description: MOSFET N-CH 20V 13.5A PPAK1212-8
товар відсутній
SI7110DN-T1-GE3 SI7110DN-T1-GE3 Vishay Siliconix si7110dn.pdf Description: MOSFET N-CH 20V 13.5A PPAK1212-8
на замовлення 1850 шт:
термін постачання 21-31 дні (днів)
2+165.74 грн
10+ 143.49 грн
100+ 115.3 грн
500+ 88.9 грн
1000+ 73.66 грн
Мінімальне замовлення: 2
SQJ142EP-T1_GE3 Vishay Siliconix Description: MOSFET N-CH 40V 167A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 167A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 15A, 10V
Power Dissipation (Max): 191W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+32.15 грн
Мінімальне замовлення: 3000
SQJ142EP-T1_GE3 Vishay Siliconix Description: MOSFET N-CH 40V 167A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 167A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 15A, 10V
Power Dissipation (Max): 191W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
Qualification: AEC-Q101
на замовлення 4200 шт:
термін постачання 21-31 дні (днів)
4+77.81 грн
10+ 61.22 грн
100+ 47.64 грн
500+ 37.89 грн
1000+ 30.87 грн
Мінімальне замовлення: 4
SQJ500AEP-T1_BE3 SQJ500AEP-T1_BE3 Vishay Siliconix Description: MOSFET N/P CHAN 40V SO8L DUAL
товар відсутній
SQJ500AEP-T1_BE3 SQJ500AEP-T1_BE3 Vishay Siliconix Description: MOSFET N/P CHAN 40V SO8L DUAL
товар відсутній
SIDR104AEP-T1-RE3 SIDR104AEP-T1-RE3 Vishay Siliconix sidr104aep.pdf Description: N-CHANNEL 100 V (D-S) 175C MOSFE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.1A (Ta), 90.5A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V
Power Dissipation (Max): 6.5W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 50 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+95.66 грн
Мінімальне замовлення: 3000
SIDR104AEP-T1-RE3 SIDR104AEP-T1-RE3 Vishay Siliconix sidr104aep.pdf Description: N-CHANNEL 100 V (D-S) 175C MOSFE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.1A (Ta), 90.5A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V
Power Dissipation (Max): 6.5W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 50 V
на замовлення 8728 шт:
термін постачання 21-31 дні (днів)
2+204.65 грн
10+ 165.6 грн
100+ 133.98 грн
500+ 111.76 грн
1000+ 95.7 грн
Мінімальне замовлення: 2
SIDR220DP-T1-GE3 Vishay Siliconix sidr220dp.pdf Description: MOSFET N-CH 25V 87.7A/100A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87.7A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1085 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+84.92 грн
Мінімальне замовлення: 3000
SIDR220EP-T1-RE3 SIDR220EP-T1-RE3 Vishay Siliconix sidr220ep.pdf Description: N-CHANNEL 25 V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 92.8A (Ta), 415A (Tc)
Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 415W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10850 pF @ 10 V
товар відсутній
SIDR220EP-T1-RE3 SIDR220EP-T1-RE3 Vishay Siliconix sidr220ep.pdf Description: N-CHANNEL 25 V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 92.8A (Ta), 415A (Tc)
Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 415W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10850 pF @ 10 V
на замовлення 5988 шт:
термін постачання 21-31 дні (днів)
2+158.74 грн
10+ 128.21 грн
100+ 103.73 грн
500+ 95.22 грн
Мінімальне замовлення: 2
SIDR402EP-T1-RE3 SIDR402EP-T1-RE3 Vishay Siliconix sidr402ep.pdf Description: N-CHANNEL 40 V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65.2A (Ta), 291A (Tc)
Rds On (Max) @ Id, Vgs: 0.88mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 20 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+76.23 грн
Мінімальне замовлення: 3000
SIDR402EP-T1-RE3 SIDR402EP-T1-RE3 Vishay Siliconix sidr402ep.pdf Description: N-CHANNEL 40 V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65.2A (Ta), 291A (Tc)
Rds On (Max) @ Id, Vgs: 0.88mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 20 V
на замовлення 5995 шт:
термін постачання 21-31 дні (днів)
2+168.85 грн
10+ 135.17 грн
100+ 107.63 грн
500+ 85.47 грн
1000+ 72.52 грн
Мінімальне замовлення: 2
SIDR608EP-T1-RE3 SIDR608EP-T1-RE3 Vishay Siliconix sidr608ep.pdf Description: N-CHANNEL 45 V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Ta), 228A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 20 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+74.36 грн
Мінімальне замовлення: 3000
SIDR608EP-T1-RE3 SIDR608EP-T1-RE3 Vishay Siliconix sidr608ep.pdf Description: N-CHANNEL 45 V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Ta), 228A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 20 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
2+177.41 грн
10+ 141.77 грн
100+ 112.82 грн
500+ 89.6 грн
1000+ 76.02 грн
Мінімальне замовлення: 2
SIDR626LDP-T1-RE3 SIDR626LDP-T1-RE3 Vishay Siliconix sidr626ldp.pdf Description: MOSFET N-CH 60V 45.6A/2.4A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45.6A (Ta)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 30 V
товар відсутній
SIDR626LEP-T1-RE3 SIDR626LEP-T1-RE3 Vishay Siliconix sidr626lep.pdf Description: N-CHANNEL 60 V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48.7A (Ta), 218A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 30 V
товар відсутній
SIDR626LEP-T1-RE3 SIDR626LEP-T1-RE3 Vishay Siliconix sidr626lep.pdf Description: N-CHANNEL 60 V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48.7A (Ta), 218A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 30 V
на замовлення 123 шт:
термін постачання 21-31 дні (днів)
2+228.77 грн
10+ 184.78 грн
100+ 149.52 грн
Мінімальне замовлення: 2
SIDR680ADP-T1-RE3 Vishay Siliconix sidr680adp.pdf Description: MOSFET N-CH 80V 30.7A/137A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.7A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 2.88mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 40 V
товар відсутній
SISH892BDN-T1-GE3 SISH892BDN-T1-GE3 Vishay Siliconix sish892bdn.pdf Description: N-CHANNEL 100 V (D-S) MOSFET POW
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 30.4mOhm @ 10A, 10V
Power Dissipation (Max): 3.4W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 50 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+22.61 грн
Мінімальне замовлення: 3000
SISH892BDN-T1-GE3 SISH892BDN-T1-GE3 Vishay Siliconix sish892bdn.pdf Description: N-CHANNEL 100 V (D-S) MOSFET POW
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 30.4mOhm @ 10A, 10V
Power Dissipation (Max): 3.4W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 50 V
на замовлення 3312 шт:
термін постачання 21-31 дні (днів)
4+89.48 грн
10+ 54.17 грн
100+ 35.79 грн
500+ 26.15 грн
1000+ 23.76 грн
Мінімальне замовлення: 4
SIDR140DP-T1-GE3 SIDR140DP-T1-GE3 Vishay Siliconix sidr140dp.pdf Description: MOSFET N-CH 25V 79A/100A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.67mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8150 pF @ 10 V
товар відсутній
SIDR140DP-T1-GE3 SIDR140DP-T1-GE3 Vishay Siliconix sidr140dp.pdf Description: MOSFET N-CH 25V 79A/100A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.67mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8150 pF @ 10 V
товар відсутній
SIDR390DP-T1-GE3 SIDR390DP-T1-GE3 Vishay Siliconix sidr390dp.pdf Description: MOSFET N-CH 30V 69.9A/100A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69.9A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10180 pF @ 15 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+75.42 грн
6000+ 69.89 грн
Мінімальне замовлення: 3000
SIDR390DP-T1-GE3 SIDR390DP-T1-GE3 Vishay Siliconix sidr390dp.pdf Description: MOSFET N-CH 30V 69.9A/100A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69.9A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10180 pF @ 15 V
на замовлення 7987 шт:
термін постачання 21-31 дні (днів)
2+167.3 грн
10+ 133.83 грн
100+ 106.48 грн
500+ 84.55 грн
1000+ 71.74 грн
Мінімальне замовлення: 2
SIDR390DP-T1-RE3 Vishay Siliconix sidr390dp.pdf Description: MOSFET N-CH 30V 69.9A/100A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69.9A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10180 pF @ 15 V
товар відсутній
SIDR390DP-T1-RE3 Vishay Siliconix sidr390dp.pdf Description: MOSFET N-CH 30V 69.9A/100A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69.9A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10180 pF @ 15 V
на замовлення 11 шт:
термін постачання 21-31 дні (днів)
2+174.3 грн
10+ 139.15 грн
Мінімальне замовлення: 2
SIDR610DP-T1-GE3 SIDR610DP-T1-GE3 Vishay Siliconix sidr610dp.pdf Description: MOSFET N-CH 200V 8.9A/39.6A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 39.6A (Tc)
Rds On (Max) @ Id, Vgs: 31.9mOhm @ 10A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 100 V
товар відсутній
SIDR610DP-T1-GE3 SIDR610DP-T1-GE3 Vishay Siliconix sidr610dp.pdf Description: MOSFET N-CH 200V 8.9A/39.6A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 39.6A (Tc)
Rds On (Max) @ Id, Vgs: 31.9mOhm @ 10A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 100 V
товар відсутній
SQW44N65EF-GE3 SQW44N65EF-GE3 Vishay Siliconix sqw44n65ef.pdf Description: E SERIES POWER MOSFET WITH FAST
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 73mOhm @ 22A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 266 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5858 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 387 шт:
термін постачання 21-31 дні (днів)
1+606.16 грн
10+ 398.93 грн
SQ4282EY-T1_GE3 SQ4282EY-T1_GE3 Vishay Siliconix sq4282ey.pdf Description: MOSFET 2 N-CHANNEL 30V 8A 8SOIC
товар відсутній
SQ4282EY-T1_GE3 SQ4282EY-T1_GE3 Vishay Siliconix sq4282ey.pdf Description: MOSFET 2 N-CHANNEL 30V 8A 8SOIC
на замовлення 710 шт:
термін постачання 21-31 дні (днів)
3+118.28 грн
10+ 102.21 грн
100+ 79.65 грн
500+ 61.75 грн
Мінімальне замовлення: 3
SQ4282EY-T1_BE3 SQ4282EY-T1_BE3 Vishay Siliconix Description: MOSFET 2 N-CHANNEL 30V 8A 8SOIC
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+53.94 грн
Мінімальне замовлення: 2500
SQ4282EY-T1_BE3 SQ4282EY-T1_BE3 Vishay Siliconix Description: MOSFET 2 N-CHANNEL 30V 8A 8SOIC
на замовлення 2608 шт:
термін постачання 21-31 дні (днів)
3+118.28 грн
10+ 102.21 грн
100+ 79.65 грн
500+ 61.75 грн
1000+ 48.75 грн
Мінімальне замовлення: 3
SUM120N04-1M7L-GE3 SUM120N04-1M7L-GE3 Vishay Siliconix SUM120N04-1m7L.pdf Description: MOSFET N-CH 40V 120A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11685 pF @ 20 V
товар відсутній
SIHP052N60EF-GE3 SIHP052N60EF-GE3 Vishay Siliconix sihp052n60ef.pdf Description: MOSFET EF SERIES TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 23A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 100 V
на замовлення 934 шт:
термін постачання 21-31 дні (днів)
1+467.65 грн
50+ 356.73 грн
100+ 305.77 грн
500+ 255.07 грн
SI2387DS-T1-GE3 SI2387DS-T1-GE3 Vishay Siliconix si2387ds.pdf Description: P-CHANNEL -80V SOT-23, 164 M @ 1
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta), 3A (Tc)
Rds On (Max) @ Id, Vgs: 164mOhm @ 2.1A, 10V
Power Dissipation (Max): 1.3W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 40 V
товар відсутній
SI2387DS-T1-GE3 SI2387DS-T1-GE3 Vishay Siliconix si2387ds.pdf Description: P-CHANNEL -80V SOT-23, 164 M @ 1
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta), 3A (Tc)
Rds On (Max) @ Id, Vgs: 164mOhm @ 2.1A, 10V
Power Dissipation (Max): 1.3W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 40 V
на замовлення 92 шт:
термін постачання 21-31 дні (днів)
9+35.79 грн
12+ 26.23 грн
Мінімальне замовлення: 9
SI1427EDH-T1-BE3 SI1427EDH-T1-BE3 Vishay Siliconix si1427ed.pdf Description: MOSFET P-CH 20V 2A/2A SC70-6
товар відсутній
SI1427EDH-T1-BE3 SI1427EDH-T1-BE3 Vishay Siliconix si1427ed.pdf Description: MOSFET P-CH 20V 2A/2A SC70-6
на замовлення 86 шт:
термін постачання 21-31 дні (днів)
SIC453ED-T1-GE3 SIC453ED-T1-GE3 Vishay Siliconix sic450_sic451_sic453.pdf Description: IC REG BUCK ADJ 15A POWERPAK
Packaging: Tape & Reel (TR)
Package / Case: 34-PowerWFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 15A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 300kHz ~ 1.5MHz
Voltage - Input (Max): 20V
Topology: Buck
Supplier Device Package: PowerPAK® MLP34-57
Synchronous Rectifier: Yes
Voltage - Output (Max): 12V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.3V
Part Status: Active
товар відсутній
SIC450ED-T1-GE3 SIC450ED-T1-GE3 Vishay Siliconix sic450_sic451_sic453.pdf Description: IC REG BUCK ADJ 40A POWERPAK
Packaging: Tape & Reel (TR)
Package / Case: 34-PowerWFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 40A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 300kHz ~ 1.5MHz
Voltage - Input (Max): 20V
Topology: Buck
Supplier Device Package: PowerPAK® MLP34-57
Synchronous Rectifier: Yes
Voltage - Output (Max): 12V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.3V
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+260.38 грн
Мінімальне замовлення: 3000
SIC450ED-T1-GE3 SIC450ED-T1-GE3 Vishay Siliconix sic450_sic451_sic453.pdf Description: IC REG BUCK ADJ 40A POWERPAK
Packaging: Cut Tape (CT)
Package / Case: 34-PowerWFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 40A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 300kHz ~ 1.5MHz
Voltage - Input (Max): 20V
Topology: Buck
Supplier Device Package: PowerPAK® MLP34-57
Synchronous Rectifier: Yes
Voltage - Output (Max): 12V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.3V
Part Status: Active
на замовлення 8799 шт:
термін постачання 21-31 дні (днів)
1+476.21 грн
10+ 414.67 грн
25+ 395.39 грн
100+ 322.19 грн
250+ 307.71 грн
500+ 280.56 грн
1000+ 240.35 грн
DG9431EDV-T1-GE3 DG9431EDV-T1-GE3 Vishay Siliconix dg9431e.pdf Description: IC SWITCH SPDT X 1 25OHM 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 25Ohm
Supplier Device Package: 6-TSOP
Voltage - Supply, Single (V+): 2.7V ~ 5.5V
Charge Injection: -0.78pC
Crosstalk: -108dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 1:2
Channel-to-Channel Matching (ΔRon): 400mOhm
Switch Time (Ton, Toff) (Max): 75ns, 50ns
Channel Capacitance (CS(off), CD(off)): 3.8pF
Current - Leakage (IS(off)) (Max): 100pA
Part Status: Active
Number of Circuits: 1
товар відсутній
DG9431EDV-T1-GE3 DG9431EDV-T1-GE3 Vishay Siliconix dg9431e.pdf Description: IC SWITCH SPDT X 1 25OHM 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 25Ohm
Supplier Device Package: 6-TSOP
Voltage - Supply, Single (V+): 2.7V ~ 5.5V
Charge Injection: -0.78pC
Crosstalk: -108dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 1:2
Channel-to-Channel Matching (ΔRon): 400mOhm
Switch Time (Ton, Toff) (Max): 75ns, 50ns
Channel Capacitance (CS(off), CD(off)): 3.8pF
Current - Leakage (IS(off)) (Max): 100pA
Part Status: Active
Number of Circuits: 1
на замовлення 1060 шт:
термін постачання 21-31 дні (днів)
3+154.07 грн
10+ 133.3 грн
25+ 125.79 грн
100+ 100.58 грн
250+ 94.44 грн
500+ 82.64 грн
1000+ 67.35 грн
Мінімальне замовлення: 3
SQ4064EY-T1_GE3 SQ4064EY-T1_GE3 Vishay Siliconix sq4064ey.pdf Description: MOSFET N-CHANNEL 60V 12A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 19.8mOhm @ 6.1A, 10V
Power Dissipation (Max): 6.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2096 pF @ 25 V
Qualification: AEC-Q101
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
2500+29.79 грн
5000+ 27.32 грн
Мінімальне замовлення: 2500
SQ4064EY-T1_GE3 SQ4064EY-T1_GE3 Vishay Siliconix sq4064ey.pdf Description: MOSFET N-CHANNEL 60V 12A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 19.8mOhm @ 6.1A, 10V
Power Dissipation (Max): 6.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2096 pF @ 25 V
Qualification: AEC-Q101
на замовлення 9813 шт:
термін постачання 21-31 дні (днів)
5+71.59 грн
10+ 56.72 грн
100+ 44.13 грн
500+ 35.11 грн
1000+ 28.6 грн
Мінімальне замовлення: 5
SQ4064EY-T1_BE3 SQ4064EY-T1_BE3 Vishay Siliconix doc?62842 Description: MOSFET N-CHANNEL 60V 12A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 19.8mOhm @ 6.1A, 10V
Power Dissipation (Max): 6.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2096 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
SQ4064EY-T1_BE3 SQ4064EY-T1_BE3 Vishay Siliconix doc?62842 Description: MOSFET N-CHANNEL 60V 12A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 19.8mOhm @ 6.1A, 10V
Power Dissipation (Max): 6.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2096 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1272 шт:
термін постачання 21-31 дні (днів)
5+71.59 грн
10+ 56.72 грн
100+ 44.13 грн
500+ 35.11 грн
1000+ 28.6 грн
Мінімальне замовлення: 5
SQJQ906E-T1_GE3 SQJQ906E-T1_GE3 Vishay Siliconix SQJQ906E_Web.pdf Description: MOSFET 2N-CH 40V 95A PPAK8X8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 8 x 8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 20V
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8 Dual
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
SQJQ906E-T1_GE3 SQJQ906E-T1_GE3 Vishay Siliconix SQJQ906E_Web.pdf Description: MOSFET 2N-CH 40V 95A PPAK8X8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 8 x 8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 20V
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8 Dual
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 1378 шт:
термін постачання 21-31 дні (днів)
2+179.75 грн
10+ 143.87 грн
100+ 114.52 грн
500+ 90.93 грн
1000+ 77.15 грн
Мінімальне замовлення: 2
SQ4005EY-T1_GE3 SQ4005EY-T1_GE3 Vishay Siliconix sq4005ey.pdf Description: MOSFET P-CHANNEL 12V 15A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm@ 13.5A, 4.5V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 6 V
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+27.98 грн
Мінімальне замовлення: 2500
SQ4005EY-T1_GE3 SQ4005EY-T1_GE3 Vishay Siliconix sq4005ey.pdf Description: MOSFET P-CHANNEL 12V 15A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm@ 13.5A, 4.5V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 6 V
Qualification: AEC-Q101
на замовлення 5556 шт:
термін постачання 21-31 дні (днів)
5+67.7 грн
10+ 53.28 грн
100+ 41.45 грн
500+ 32.98 грн
1000+ 26.86 грн
Мінімальне замовлення: 5
SIHS36N50D-GE3 SIHS36N50D-GE3 Vishay Siliconix sihs36n50d.pdf Description: D SERIES POWER MOSFET SUPER-247,
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 18A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3233 pF @ 100 V
на замовлення 527 шт:
термін постачання 21-31 дні (днів)
1+546.24 грн
30+ 305.02 грн
120+ 256.21 грн
510+ 208.43 грн
92042022C Vishay Siliconix Description: IC MUX DUAL 4:1 100 OHM 20LCC
товар відсутній
DG613EEY-T1-GE4 DG613EEY-T1-GE4 Vishay Siliconix dg611e.pdf Description: IC ANALOG SWITCH 16SOIC
товар відсутній
DG613EEY-T1-GE4 DG613EEY-T1-GE4 Vishay Siliconix dg611e.pdf Description: IC ANALOG SWITCH 16SOIC
на замовлення 2192 шт:
термін постачання 21-31 дні (днів)
3+114.38 грн
10+ 98.46 грн
25+ 93.51 грн
100+ 72.09 грн
250+ 67.39 грн
500+ 59.55 грн
1000+ 47.99 грн
Мінімальне замовлення: 3
IRFR214PBF-BE3 sihfr214.pdf
IRFR214PBF-BE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 250V 2.2A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.3A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
на замовлення 1286 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+70.03 грн
75+ 54.54 грн
150+ 43.21 грн
525+ 34.38 грн
1050+ 34 грн
Мінімальне замовлення: 5
SQJ411EP-T1_GE3 sqj411ep.pdf
SQJ411EP-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 12V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 15A, 4.5V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 6 V
товар відсутній
SQJ411EP-T1_GE3 sqj411ep.pdf
SQJ411EP-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 12V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 15A, 4.5V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 6 V
на замовлення 2994 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+91.82 грн
10+ 72.08 грн
100+ 56.03 грн
500+ 44.57 грн
1000+ 36.31 грн
Мінімальне замовлення: 4
SI7110DN-T1-GE3 si7110dn.pdf
SI7110DN-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 20V 13.5A PPAK1212-8
товар відсутній
SI7110DN-T1-GE3 si7110dn.pdf
SI7110DN-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 20V 13.5A PPAK1212-8
на замовлення 1850 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+165.74 грн
10+ 143.49 грн
100+ 115.3 грн
500+ 88.9 грн
1000+ 73.66 грн
Мінімальне замовлення: 2
SQJ142EP-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 167A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 167A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 15A, 10V
Power Dissipation (Max): 191W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+32.15 грн
Мінімальне замовлення: 3000
SQJ142EP-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 167A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 167A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 15A, 10V
Power Dissipation (Max): 191W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
Qualification: AEC-Q101
на замовлення 4200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+77.81 грн
10+ 61.22 грн
100+ 47.64 грн
500+ 37.89 грн
1000+ 30.87 грн
Мінімальне замовлення: 4
SQJ500AEP-T1_BE3
SQJ500AEP-T1_BE3
Виробник: Vishay Siliconix
Description: MOSFET N/P CHAN 40V SO8L DUAL
товар відсутній
SQJ500AEP-T1_BE3
SQJ500AEP-T1_BE3
Виробник: Vishay Siliconix
Description: MOSFET N/P CHAN 40V SO8L DUAL
товар відсутній
SIDR104AEP-T1-RE3 sidr104aep.pdf
SIDR104AEP-T1-RE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) 175C MOSFE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.1A (Ta), 90.5A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V
Power Dissipation (Max): 6.5W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 50 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+95.66 грн
Мінімальне замовлення: 3000
SIDR104AEP-T1-RE3 sidr104aep.pdf
SIDR104AEP-T1-RE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) 175C MOSFE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.1A (Ta), 90.5A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V
Power Dissipation (Max): 6.5W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 50 V
на замовлення 8728 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+204.65 грн
10+ 165.6 грн
100+ 133.98 грн
500+ 111.76 грн
1000+ 95.7 грн
Мінімальне замовлення: 2
SIDR220DP-T1-GE3 sidr220dp.pdf
Виробник: Vishay Siliconix
Description: MOSFET N-CH 25V 87.7A/100A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87.7A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1085 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+84.92 грн
Мінімальне замовлення: 3000
SIDR220EP-T1-RE3 sidr220ep.pdf
SIDR220EP-T1-RE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 25 V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 92.8A (Ta), 415A (Tc)
Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 415W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10850 pF @ 10 V
товар відсутній
SIDR220EP-T1-RE3 sidr220ep.pdf
SIDR220EP-T1-RE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 25 V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 92.8A (Ta), 415A (Tc)
Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 415W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10850 pF @ 10 V
на замовлення 5988 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+158.74 грн
10+ 128.21 грн
100+ 103.73 грн
500+ 95.22 грн
Мінімальне замовлення: 2
SIDR402EP-T1-RE3 sidr402ep.pdf
SIDR402EP-T1-RE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 40 V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65.2A (Ta), 291A (Tc)
Rds On (Max) @ Id, Vgs: 0.88mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 20 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+76.23 грн
Мінімальне замовлення: 3000
SIDR402EP-T1-RE3 sidr402ep.pdf
SIDR402EP-T1-RE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 40 V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65.2A (Ta), 291A (Tc)
Rds On (Max) @ Id, Vgs: 0.88mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 20 V
на замовлення 5995 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+168.85 грн
10+ 135.17 грн
100+ 107.63 грн
500+ 85.47 грн
1000+ 72.52 грн
Мінімальне замовлення: 2
SIDR608EP-T1-RE3 sidr608ep.pdf
SIDR608EP-T1-RE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 45 V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Ta), 228A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 20 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+74.36 грн
Мінімальне замовлення: 3000
SIDR608EP-T1-RE3 sidr608ep.pdf
SIDR608EP-T1-RE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 45 V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Ta), 228A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 20 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+177.41 грн
10+ 141.77 грн
100+ 112.82 грн
500+ 89.6 грн
1000+ 76.02 грн
Мінімальне замовлення: 2
SIDR626LDP-T1-RE3 sidr626ldp.pdf
SIDR626LDP-T1-RE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 45.6A/2.4A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45.6A (Ta)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 30 V
товар відсутній
SIDR626LEP-T1-RE3 sidr626lep.pdf
SIDR626LEP-T1-RE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 60 V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48.7A (Ta), 218A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 30 V
товар відсутній
SIDR626LEP-T1-RE3 sidr626lep.pdf
SIDR626LEP-T1-RE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 60 V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48.7A (Ta), 218A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 30 V
на замовлення 123 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+228.77 грн
10+ 184.78 грн
100+ 149.52 грн
Мінімальне замовлення: 2
SIDR680ADP-T1-RE3 sidr680adp.pdf
Виробник: Vishay Siliconix
Description: MOSFET N-CH 80V 30.7A/137A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.7A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 2.88mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 40 V
товар відсутній
SISH892BDN-T1-GE3 sish892bdn.pdf
SISH892BDN-T1-GE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) MOSFET POW
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 30.4mOhm @ 10A, 10V
Power Dissipation (Max): 3.4W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 50 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+22.61 грн
Мінімальне замовлення: 3000
SISH892BDN-T1-GE3 sish892bdn.pdf
SISH892BDN-T1-GE3
Виробник: Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) MOSFET POW
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 30.4mOhm @ 10A, 10V
Power Dissipation (Max): 3.4W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 50 V
на замовлення 3312 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+89.48 грн
10+ 54.17 грн
100+ 35.79 грн
500+ 26.15 грн
1000+ 23.76 грн
Мінімальне замовлення: 4
SIDR140DP-T1-GE3 sidr140dp.pdf
SIDR140DP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 25V 79A/100A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.67mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8150 pF @ 10 V
товар відсутній
SIDR140DP-T1-GE3 sidr140dp.pdf
SIDR140DP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 25V 79A/100A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.67mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8150 pF @ 10 V
товар відсутній
SIDR390DP-T1-GE3 sidr390dp.pdf
SIDR390DP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 69.9A/100A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69.9A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10180 pF @ 15 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+75.42 грн
6000+ 69.89 грн
Мінімальне замовлення: 3000
SIDR390DP-T1-GE3 sidr390dp.pdf
SIDR390DP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 69.9A/100A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69.9A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10180 pF @ 15 V
на замовлення 7987 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+167.3 грн
10+ 133.83 грн
100+ 106.48 грн
500+ 84.55 грн
1000+ 71.74 грн
Мінімальне замовлення: 2
SIDR390DP-T1-RE3 sidr390dp.pdf
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 69.9A/100A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69.9A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10180 pF @ 15 V
товар відсутній
SIDR390DP-T1-RE3 sidr390dp.pdf
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 69.9A/100A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69.9A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10180 pF @ 15 V
на замовлення 11 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+174.3 грн
10+ 139.15 грн
Мінімальне замовлення: 2
SIDR610DP-T1-GE3 sidr610dp.pdf
SIDR610DP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 8.9A/39.6A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 39.6A (Tc)
Rds On (Max) @ Id, Vgs: 31.9mOhm @ 10A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 100 V
товар відсутній
SIDR610DP-T1-GE3 sidr610dp.pdf
SIDR610DP-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 8.9A/39.6A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 39.6A (Tc)
Rds On (Max) @ Id, Vgs: 31.9mOhm @ 10A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 100 V
товар відсутній
SQW44N65EF-GE3 sqw44n65ef.pdf
SQW44N65EF-GE3
Виробник: Vishay Siliconix
Description: E SERIES POWER MOSFET WITH FAST
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 73mOhm @ 22A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 266 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5858 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 387 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+606.16 грн
10+ 398.93 грн
SQ4282EY-T1_GE3 sq4282ey.pdf
SQ4282EY-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET 2 N-CHANNEL 30V 8A 8SOIC
товар відсутній
SQ4282EY-T1_GE3 sq4282ey.pdf
SQ4282EY-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET 2 N-CHANNEL 30V 8A 8SOIC
на замовлення 710 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+118.28 грн
10+ 102.21 грн
100+ 79.65 грн
500+ 61.75 грн
Мінімальне замовлення: 3
SQ4282EY-T1_BE3
SQ4282EY-T1_BE3
Виробник: Vishay Siliconix
Description: MOSFET 2 N-CHANNEL 30V 8A 8SOIC
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+53.94 грн
Мінімальне замовлення: 2500
SQ4282EY-T1_BE3
SQ4282EY-T1_BE3
Виробник: Vishay Siliconix
Description: MOSFET 2 N-CHANNEL 30V 8A 8SOIC
на замовлення 2608 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+118.28 грн
10+ 102.21 грн
100+ 79.65 грн
500+ 61.75 грн
1000+ 48.75 грн
Мінімальне замовлення: 3
SUM120N04-1M7L-GE3 SUM120N04-1m7L.pdf
SUM120N04-1M7L-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 120A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11685 pF @ 20 V
товар відсутній
SIHP052N60EF-GE3 sihp052n60ef.pdf
SIHP052N60EF-GE3
Виробник: Vishay Siliconix
Description: MOSFET EF SERIES TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 23A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 100 V
на замовлення 934 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+467.65 грн
50+ 356.73 грн
100+ 305.77 грн
500+ 255.07 грн
SI2387DS-T1-GE3 si2387ds.pdf
SI2387DS-T1-GE3
Виробник: Vishay Siliconix
Description: P-CHANNEL -80V SOT-23, 164 M @ 1
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta), 3A (Tc)
Rds On (Max) @ Id, Vgs: 164mOhm @ 2.1A, 10V
Power Dissipation (Max): 1.3W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 40 V
товар відсутній
SI2387DS-T1-GE3 si2387ds.pdf
SI2387DS-T1-GE3
Виробник: Vishay Siliconix
Description: P-CHANNEL -80V SOT-23, 164 M @ 1
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta), 3A (Tc)
Rds On (Max) @ Id, Vgs: 164mOhm @ 2.1A, 10V
Power Dissipation (Max): 1.3W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 40 V
на замовлення 92 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
9+35.79 грн
12+ 26.23 грн
Мінімальне замовлення: 9
SI1427EDH-T1-BE3 si1427ed.pdf
SI1427EDH-T1-BE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 2A/2A SC70-6
товар відсутній
SI1427EDH-T1-BE3 si1427ed.pdf
SI1427EDH-T1-BE3
Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 2A/2A SC70-6
на замовлення 86 шт:
термін постачання 21-31 дні (днів)
SIC453ED-T1-GE3 sic450_sic451_sic453.pdf
SIC453ED-T1-GE3
Виробник: Vishay Siliconix
Description: IC REG BUCK ADJ 15A POWERPAK
Packaging: Tape & Reel (TR)
Package / Case: 34-PowerWFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 15A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 300kHz ~ 1.5MHz
Voltage - Input (Max): 20V
Topology: Buck
Supplier Device Package: PowerPAK® MLP34-57
Synchronous Rectifier: Yes
Voltage - Output (Max): 12V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.3V
Part Status: Active
товар відсутній
SIC450ED-T1-GE3 sic450_sic451_sic453.pdf
SIC450ED-T1-GE3
Виробник: Vishay Siliconix
Description: IC REG BUCK ADJ 40A POWERPAK
Packaging: Tape & Reel (TR)
Package / Case: 34-PowerWFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 40A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 300kHz ~ 1.5MHz
Voltage - Input (Max): 20V
Topology: Buck
Supplier Device Package: PowerPAK® MLP34-57
Synchronous Rectifier: Yes
Voltage - Output (Max): 12V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.3V
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+260.38 грн
Мінімальне замовлення: 3000
SIC450ED-T1-GE3 sic450_sic451_sic453.pdf
SIC450ED-T1-GE3
Виробник: Vishay Siliconix
Description: IC REG BUCK ADJ 40A POWERPAK
Packaging: Cut Tape (CT)
Package / Case: 34-PowerWFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 40A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 300kHz ~ 1.5MHz
Voltage - Input (Max): 20V
Topology: Buck
Supplier Device Package: PowerPAK® MLP34-57
Synchronous Rectifier: Yes
Voltage - Output (Max): 12V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.3V
Part Status: Active
на замовлення 8799 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+476.21 грн
10+ 414.67 грн
25+ 395.39 грн
100+ 322.19 грн
250+ 307.71 грн
500+ 280.56 грн
1000+ 240.35 грн
DG9431EDV-T1-GE3 dg9431e.pdf
DG9431EDV-T1-GE3
Виробник: Vishay Siliconix
Description: IC SWITCH SPDT X 1 25OHM 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 25Ohm
Supplier Device Package: 6-TSOP
Voltage - Supply, Single (V+): 2.7V ~ 5.5V
Charge Injection: -0.78pC
Crosstalk: -108dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 1:2
Channel-to-Channel Matching (ΔRon): 400mOhm
Switch Time (Ton, Toff) (Max): 75ns, 50ns
Channel Capacitance (CS(off), CD(off)): 3.8pF
Current - Leakage (IS(off)) (Max): 100pA
Part Status: Active
Number of Circuits: 1
товар відсутній
DG9431EDV-T1-GE3 dg9431e.pdf
DG9431EDV-T1-GE3
Виробник: Vishay Siliconix
Description: IC SWITCH SPDT X 1 25OHM 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 25Ohm
Supplier Device Package: 6-TSOP
Voltage - Supply, Single (V+): 2.7V ~ 5.5V
Charge Injection: -0.78pC
Crosstalk: -108dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 1:2
Channel-to-Channel Matching (ΔRon): 400mOhm
Switch Time (Ton, Toff) (Max): 75ns, 50ns
Channel Capacitance (CS(off), CD(off)): 3.8pF
Current - Leakage (IS(off)) (Max): 100pA
Part Status: Active
Number of Circuits: 1
на замовлення 1060 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+154.07 грн
10+ 133.3 грн
25+ 125.79 грн
100+ 100.58 грн
250+ 94.44 грн
500+ 82.64 грн
1000+ 67.35 грн
Мінімальне замовлення: 3
SQ4064EY-T1_GE3 sq4064ey.pdf
SQ4064EY-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CHANNEL 60V 12A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 19.8mOhm @ 6.1A, 10V
Power Dissipation (Max): 6.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2096 pF @ 25 V
Qualification: AEC-Q101
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+29.79 грн
5000+ 27.32 грн
Мінімальне замовлення: 2500
SQ4064EY-T1_GE3 sq4064ey.pdf
SQ4064EY-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CHANNEL 60V 12A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 19.8mOhm @ 6.1A, 10V
Power Dissipation (Max): 6.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2096 pF @ 25 V
Qualification: AEC-Q101
на замовлення 9813 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+71.59 грн
10+ 56.72 грн
100+ 44.13 грн
500+ 35.11 грн
1000+ 28.6 грн
Мінімальне замовлення: 5
SQ4064EY-T1_BE3 doc?62842
SQ4064EY-T1_BE3
Виробник: Vishay Siliconix
Description: MOSFET N-CHANNEL 60V 12A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 19.8mOhm @ 6.1A, 10V
Power Dissipation (Max): 6.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2096 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
SQ4064EY-T1_BE3 doc?62842
SQ4064EY-T1_BE3
Виробник: Vishay Siliconix
Description: MOSFET N-CHANNEL 60V 12A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 19.8mOhm @ 6.1A, 10V
Power Dissipation (Max): 6.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2096 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1272 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+71.59 грн
10+ 56.72 грн
100+ 44.13 грн
500+ 35.11 грн
1000+ 28.6 грн
Мінімальне замовлення: 5
SQJQ906E-T1_GE3 SQJQ906E_Web.pdf
SQJQ906E-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 40V 95A PPAK8X8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 8 x 8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 20V
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8 Dual
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
SQJQ906E-T1_GE3 SQJQ906E_Web.pdf
SQJQ906E-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 40V 95A PPAK8X8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 8 x 8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 20V
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8 Dual
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 1378 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+179.75 грн
10+ 143.87 грн
100+ 114.52 грн
500+ 90.93 грн
1000+ 77.15 грн
Мінімальне замовлення: 2
SQ4005EY-T1_GE3 sq4005ey.pdf
SQ4005EY-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CHANNEL 12V 15A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm@ 13.5A, 4.5V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 6 V
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+27.98 грн
Мінімальне замовлення: 2500
SQ4005EY-T1_GE3 sq4005ey.pdf
SQ4005EY-T1_GE3
Виробник: Vishay Siliconix
Description: MOSFET P-CHANNEL 12V 15A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm@ 13.5A, 4.5V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 6 V
Qualification: AEC-Q101
на замовлення 5556 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+67.7 грн
10+ 53.28 грн
100+ 41.45 грн
500+ 32.98 грн
1000+ 26.86 грн
Мінімальне замовлення: 5
SIHS36N50D-GE3 sihs36n50d.pdf
SIHS36N50D-GE3
Виробник: Vishay Siliconix
Description: D SERIES POWER MOSFET SUPER-247,
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 18A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3233 pF @ 100 V
на замовлення 527 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+546.24 грн
30+ 305.02 грн
120+ 256.21 грн
510+ 208.43 грн
92042022C
Виробник: Vishay Siliconix
Description: IC MUX DUAL 4:1 100 OHM 20LCC
товар відсутній
DG613EEY-T1-GE4 dg611e.pdf
DG613EEY-T1-GE4
Виробник: Vishay Siliconix
Description: IC ANALOG SWITCH 16SOIC
товар відсутній
DG613EEY-T1-GE4 dg611e.pdf
DG613EEY-T1-GE4
Виробник: Vishay Siliconix
Description: IC ANALOG SWITCH 16SOIC
на замовлення 2192 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+114.38 грн
10+ 98.46 грн
25+ 93.51 грн
100+ 72.09 грн
250+ 67.39 грн
500+ 59.55 грн
1000+ 47.99 грн
Мінімальне замовлення: 3
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