SQ3461EV-T1_GE3 Vishay / Siliconix
на замовлення 16631 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
6+ | 58.92 грн |
10+ | 50.29 грн |
100+ | 30.33 грн |
500+ | 25.32 грн |
1000+ | 21.58 грн |
3000+ | 19.19 грн |
6000+ | 18.13 грн |
Відгуки про товар
Написати відгук
Технічний опис SQ3461EV-T1_GE3 Vishay / Siliconix
Description: MOSFET P-CHANNEL 12V 8A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 7.9A, 4.5V, Power Dissipation (Max): 5W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 6-TSOP, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 6 V.
Інші пропозиції SQ3461EV-T1_GE3
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
SQ3461EV-T1_GE3 | Виробник : Vishay | Trans MOSFET P-CH 12V 8A Automotive 6-Pin TSOP T/R |
товар відсутній |
||
SQ3461EV-T1_GE3 | Виробник : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -6.6A; 1.67W; TSOP6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -6.6A Power dissipation: 1.67W Case: TSOP6 Gate-source voltage: ±8V On-state resistance: 25mΩ Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
||
SQ3461EV-T1_GE3 | Виробник : Vishay Siliconix |
Description: MOSFET P-CHANNEL 12V 8A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 7.9A, 4.5V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 6 V |
товар відсутній |
||
SQ3461EV-T1_GE3 | Виробник : Vishay Siliconix |
Description: MOSFET P-CHANNEL 12V 8A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 7.9A, 4.5V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 6 V |
товар відсутній |
||
SQ3461EV-T1_GE3 | Виробник : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -6.6A; 1.67W; TSOP6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -6.6A Power dissipation: 1.67W Case: TSOP6 Gate-source voltage: ±8V On-state resistance: 25mΩ Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |