Продукція > TAIWAN SEMICONDUCTOR CORPORATION > Всі товари виробника TAIWAN SEMICONDUCTOR CORPORATION (23462) > Сторінка 182 з 392
| Фото | Назва | Виробник | Інформація |
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BZW04-5V8BHA0G | Taiwan Semiconductor Corporation |
 Description: TVS DIODE 5.8VWM 10.5VC DO204ALPackaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 38A Voltage - Reverse Standoff (Typ): 5.8V Supplier Device Package: DO-204AL (DO-41) Bidirectional Channels: 1 Voltage - Breakdown (Min): 6.45V Voltage - Clamping (Max) @ Ipp: 10.5V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
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BZW04-5V8HA0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 5.8VWM 10.5VC DO204AL |
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BZW04-5V8 B0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 5.8VWM 10.5VC DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 38A Voltage - Reverse Standoff (Typ): 5.8V Supplier Device Package: DO-204AL (DO-41) Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.45V Voltage - Clamping (Max) @ Ipp: 10.5V Power - Peak Pulse: 400W Power Line Protection: No |
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BZW04-5V8B B0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 5.8VWM 10.5VC DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 38A Voltage - Reverse Standoff (Typ): 5.8V Supplier Device Package: DO-204AL (DO-41) Bidirectional Channels: 1 Voltage - Breakdown (Min): 6.45V Voltage - Clamping (Max) @ Ipp: 10.5V Power - Peak Pulse: 400W Power Line Protection: No |
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BZW04-5V8BHB0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 5.8VWM 10.5VC DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 38A Voltage - Reverse Standoff (Typ): 5.8V Supplier Device Package: DO-204AL (DO-41) Bidirectional Channels: 1 Voltage - Breakdown (Min): 6.45V Voltage - Clamping (Max) @ Ipp: 10.5V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
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BZW04-5V8HB0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 5.8VWM 10.5VC DO204AL |
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.jpg "TSM6866SDCA RVG") |
TSM6866SDCA RVG | Taiwan Semiconductor Corporation |
Description: MOSFET 2 N-CH 20V 6A 8TSSOP Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.6W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 565pF @ 8V Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V Vgs(th) (Max) @ Id: 600mV @ 250µA Supplier Device Package: 8-TSSOP Part Status: Active |
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TSM6866SDCA RVG | Taiwan Semiconductor Corporation |
Description: MOSFET 2 N-CH 20V 6A 8TSSOP Packaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.6W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 565pF @ 8V Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V Vgs(th) (Max) @ Id: 600mV @ 250µA Supplier Device Package: 8-TSSOP Part Status: Active |
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,-TO-263AB.jpg "SRAS20150 MNG") |
SRAS20150 MNG | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 150V 20A TO263AB |
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SRAS20150HMNG | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 150V 20A TO263AB |
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RS3KB-T R5G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 3A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 50pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
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RS3KB-T R5G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 3A DO214AA Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 50pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
на замовлення 1984 шт: термін постачання 21-31 дні (днів) |
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S3KB M4G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 3A DO214AA |
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S3KBHM4G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 3A DO214AA |
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HS3KB M4G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 3A DO214AA |
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S3KBHR5G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 3A DO214AA |
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RS3JB-T R5G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 3A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Capacitance @ Vr, F: 50pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
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RS3JB-T R5G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 3A DO214AA Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Capacitance @ Vr, F: 50pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
на замовлення 390 шт: термін постачання 21-31 дні (днів) |
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RS3J V7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 3A DO214AB |
на замовлення 1501 шт: термін постачання 21-31 дні (днів) |
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RS3J R7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 3A DO214AB Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
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RS3J M6G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 3A DO214AB |
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RS3J V6G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 3A DO214AB |
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RS3JHM6G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 3A DO214AB |
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RS3JHR7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 3A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
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.jpg "TSZU52C5V1 RGG") |
TSZU52C5V1 RGG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 5.1V 150MW 0603 |
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SA58AHR0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 58VWM 93.6VC DO204AC |
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SA58CAHR0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 58VWM 93.6VC DO204AC |
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TLD8S10AH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 10VWM 17VC DO218AB Packaging: Cut Tape (CT) Package / Case: DO-218AB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 388A Voltage - Reverse Standoff (Typ): 10V Supplier Device Package: DO-218AB Unidirectional Channels: 1 Voltage - Breakdown (Min): 11.1V Voltage - Clamping (Max) @ Ipp: 17V Power - Peak Pulse: 6600W (6.6kW) Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1475 шт: термін постачання 21-31 дні (днів) |
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TLD5S10AH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 10VWM 17VC DO218AB Packaging: Cut Tape (CT) Package / Case: DO-218AB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 212A Voltage - Reverse Standoff (Typ): 10V Supplier Device Package: DO-218AB Unidirectional Channels: 1 Voltage - Breakdown (Min): 11.1V Voltage - Clamping (Max) @ Ipp: 17V Power - Peak Pulse: 2800W (2.8kW) Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
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TLD6S10AH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 10VWM 17VC DO218AB Packaging: Cut Tape (CT) Package / Case: DO-218AB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 271A Voltage - Reverse Standoff (Typ): 10V Supplier Device Package: DO-218AB Unidirectional Channels: 1 Voltage - Breakdown (Min): 11.1V Voltage - Clamping (Max) @ Ipp: 17V Power - Peak Pulse: 3600W (3.6kW) Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
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YBS2204G RAG | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 400V 2.2A YBS |
на замовлення 1934 шт: термін постачання 21-31 дні (днів) |
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YBS2206G RAG | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 800V 2.2A YBS |
на замовлення 2884 шт: термін постачання 21-31 дні (днів) |
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YBS2207G RAG | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 1KV 2.2A YBS |
на замовлення 1918 шт: термін постачання 21-31 дні (днів) |
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| ZM4730A L0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 3.9V 1W MELF |
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| ZM4731A L0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 4.3V 1W MELF |
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ZM4737A L0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 7.5V 1W MELF Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-213AB, MELF Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Voltage - Zener (Nom) (Vz): 7.5 V Impedance (Max) (Zzt): 4 Ohms Supplier Device Package: MELF Part Status: Active Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 5 V |
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| ZM4738A L0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 8.2V 1W MELF |
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| ZM4740A L0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 10V 1W MELF |
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ZM4741A L0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 11V 1W MELF |
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YBS2205G RAG | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 600V 2.2A YBS |
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SR4050PT C0G | Taiwan Semiconductor Corporation |
Description: DIODE ARRAY SCHOTTKY 50V TO247AD |
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SR4050PTHC0G | Taiwan Semiconductor Corporation |
Description: DIODE ARRAY SCHOTTKY 50V TO247AD |
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SMDJ45A M6G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 45VWM 72.7VC DO214AB |
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SMDJ45AHM6G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 45VWM 72.7VC DO214AB |
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SMDJ45A R7G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 45VWM 72.7VC DO214AB |
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SMDJ45AHR7G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 45VWM 72.7VC DO214AB |
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MBRS6040CT MNG | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 40V 60A TO263AB |
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MBRS6040CT MNG | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 40V 60A TO263AB |
на замовлення 603 шт: термін постачання 21-31 дні (днів) |
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TS10P06G D2G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1P 800V 10A TS-6P |
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TS10P06G C2G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1P 800V 10A TS-6P Packaging: Tube Package / Case: 4-SIP, TS-6P Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: TS-6P Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
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TS10P06GHC2G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1P 800V 10A TS-6P Packaging: Tube Package / Case: 4-SIP, TS-6P Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: TS-6P Grade: Automotive Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V Qualification: AEC-Q101 |
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TS10P06GHD2G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1P 800V 10A TS-6P Packaging: Tube Package / Case: 4-SIP, TS-6P Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: TS-6P Grade: Automotive Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Qualification: AEC-Q101 |
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1.5SMC30CA V7G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 25.6VWM 41.4VC DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 38A Voltage - Reverse Standoff (Typ): 25.6V Supplier Device Package: DO-214AB (SMC) Bidirectional Channels: 1 Voltage - Breakdown (Min): 28.5V Voltage - Clamping (Max) @ Ipp: 41.4V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
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1.5SMC30CA V7G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 25.6VWM 41.4VC DO214AB Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 38A Voltage - Reverse Standoff (Typ): 25.6V Supplier Device Package: DO-214AB (SMC) Bidirectional Channels: 1 Voltage - Breakdown (Min): 28.5V Voltage - Clamping (Max) @ Ipp: 41.4V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
на замовлення 11 шт: термін постачання 21-31 дні (днів) |
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SMCJ70A V7G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 70VWM 113VC DO214AB |
на замовлення 1640 шт: термін постачання 21-31 дні (днів) |
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P6SMB160AHM4G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 136VWM 219VC DO214AA |
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TSM4ND60CI C0G | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 600V 4A ITO220 |
на замовлення 464 шт: термін постачання 21-31 дні (днів) |
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P4SMA6.8A M2G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 5.8VWM 10.5VC DO214AC |
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P4SMA6.8AHM2G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 5.8VWM 10.5VC DO214AC |
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P4SMA6.8A R3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 5.8VWM 10.5VC DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 40A Voltage - Reverse Standoff (Typ): 5.8V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.46V Voltage - Clamping (Max) @ Ipp: 10.5V Power - Peak Pulse: 400W Power Line Protection: No |
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| BZW04-5V8BHA0G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 5.8VWM 10.5VC DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 5.8VWM 10.5VC DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
| BZW04-5V8HA0G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 5.8VWM 10.5VC DO204AL
Description: TVS DIODE 5.8VWM 10.5VC DO204AL
товар відсутній
| BZW04-5V8 B0G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 5.8VWM 10.5VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Description: TVS DIODE 5.8VWM 10.5VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 400W
Power Line Protection: No
товар відсутній
| BZW04-5V8B B0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 5.8VWM 10.5VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Description: TVS DIODE 5.8VWM 10.5VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 400W
Power Line Protection: No
товар відсутній
| BZW04-5V8BHB0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 5.8VWM 10.5VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 5.8VWM 10.5VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
| BZW04-5V8HB0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 5.8VWM 10.5VC DO204AL
Description: TVS DIODE 5.8VWM 10.5VC DO204AL
товар відсутній
| TSM6866SDCA RVG |
|
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET 2 N-CH 20V 6A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 565pF @ 8V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA
Supplier Device Package: 8-TSSOP
Part Status: Active
Description: MOSFET 2 N-CH 20V 6A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 565pF @ 8V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA
Supplier Device Package: 8-TSSOP
Part Status: Active
товар відсутній
| TSM6866SDCA RVG |
|
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET 2 N-CH 20V 6A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 565pF @ 8V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA
Supplier Device Package: 8-TSSOP
Part Status: Active
Description: MOSFET 2 N-CH 20V 6A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 565pF @ 8V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA
Supplier Device Package: 8-TSSOP
Part Status: Active
товар відсутній
| SRAS20150 MNG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 20A TO263AB
Description: DIODE SCHOTTKY 150V 20A TO263AB
товар відсутній
| SRAS20150HMNG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 20A TO263AB
Description: DIODE SCHOTTKY 150V 20A TO263AB
товар відсутній
| RS3KB-T R5G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: DIODE GEN PURP 800V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
| RS3KB-T R5G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: DIODE GEN PURP 800V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 1984 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 31.66 грн |
| 13+ | 24.1 грн |
| 100+ | 14.48 грн |
| S3KB M4G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 3A DO214AA
Description: DIODE GEN PURP 800V 3A DO214AA
товар відсутній
| S3KBHM4G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 3A DO214AA
Description: DIODE GEN PURP 800V 3A DO214AA
товар відсутній
| HS3KB M4G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 3A DO214AA
Description: DIODE GEN PURP 800V 3A DO214AA
товар відсутній
| S3KBHR5G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 3A DO214AA
Description: DIODE GEN PURP 800V 3A DO214AA
товар відсутній
| RS3JB-T R5G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
| RS3JB-T R5G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 390 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 33.17 грн |
| 12+ | 25.99 грн |
| 100+ | 17.72 грн |
| RS3J V7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO214AB
Description: DIODE GEN PURP 600V 3A DO214AB
на замовлення 1501 шт:
термін постачання 21-31 дні (днів)| RS3J R7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
| RS3J M6G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO214AB
Description: DIODE GEN PURP 600V 3A DO214AB
товар відсутній
| RS3J V6G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO214AB
Description: DIODE GEN PURP 600V 3A DO214AB
товар відсутній
| RS3JHM6G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO214AB
Description: DIODE GEN PURP 600V 3A DO214AB
товар відсутній
| RS3JHR7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
| TSZU52C5V1 RGG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.1V 150MW 0603
Description: DIODE ZENER 5.1V 150MW 0603
товар відсутній
| SA58AHR0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 58VWM 93.6VC DO204AC
Description: TVS DIODE 58VWM 93.6VC DO204AC
товар відсутній
| SA58CAHR0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 58VWM 93.6VC DO204AC
Description: TVS DIODE 58VWM 93.6VC DO204AC
товар відсутній
| TLD8S10AH |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 10VWM 17VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 388A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 10VWM 17VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 388A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1475 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 260.84 грн |
| 10+ | 211.25 грн |
| 100+ | 170.95 грн |
| TLD5S10AH |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 10VWM 17VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 212A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 2800W (2.8kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 10VWM 17VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 212A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 2800W (2.8kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
| TLD6S10AH |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 10VWM 17VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 271A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 10VWM 17VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 271A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
| YBS2204G RAG |
|
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 2.2A YBS
Description: BRIDGE RECT 1PHASE 400V 2.2A YBS
на замовлення 1934 шт:
термін постачання 21-31 дні (днів)| YBS2206G RAG |
|
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 2.2A YBS
Description: BRIDGE RECT 1PHASE 800V 2.2A YBS
на замовлення 2884 шт:
термін постачання 21-31 дні (днів)| YBS2207G RAG |
|
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 2.2A YBS
Description: BRIDGE RECT 1PHASE 1KV 2.2A YBS
на замовлення 1918 шт:
термін постачання 21-31 дні (днів)| ZM4730A L0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.9V 1W MELF
Description: DIODE ZENER 3.9V 1W MELF
товар відсутній
| ZM4731A L0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.3V 1W MELF
Description: DIODE ZENER 4.3V 1W MELF
товар відсутній
| ZM4737A L0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 7.5V 1W MELF
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: MELF
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 5 V
Description: DIODE ZENER 7.5V 1W MELF
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: MELF
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 5 V
товар відсутній
| ZM4738A L0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 8.2V 1W MELF
Description: DIODE ZENER 8.2V 1W MELF
товар відсутній
| ZM4740A L0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 10V 1W MELF
Description: DIODE ZENER 10V 1W MELF
товар відсутній
| ZM4741A L0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 11V 1W MELF
Description: DIODE ZENER 11V 1W MELF
товар відсутній
| YBS2205G RAG |
|
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 2.2A YBS
Description: BRIDGE RECT 1PHASE 600V 2.2A YBS
товар відсутній
| SR4050PT C0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 50V TO247AD
Description: DIODE ARRAY SCHOTTKY 50V TO247AD
товар відсутній
| SR4050PTHC0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 50V TO247AD
Description: DIODE ARRAY SCHOTTKY 50V TO247AD
товар відсутній
| SMDJ45A M6G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 45VWM 72.7VC DO214AB
Description: TVS DIODE 45VWM 72.7VC DO214AB
товар відсутній
| SMDJ45AHM6G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 45VWM 72.7VC DO214AB
Description: TVS DIODE 45VWM 72.7VC DO214AB
товар відсутній
| SMDJ45A R7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 45VWM 72.7VC DO214AB
Description: TVS DIODE 45VWM 72.7VC DO214AB
товар відсутній
| SMDJ45AHR7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 45VWM 72.7VC DO214AB
Description: TVS DIODE 45VWM 72.7VC DO214AB
товар відсутній
| MBRS6040CT MNG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 60A TO263AB
Description: DIODE SCHOTTKY 40V 60A TO263AB
товар відсутній
| MBRS6040CT MNG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 60A TO263AB
Description: DIODE SCHOTTKY 40V 60A TO263AB
на замовлення 603 шт:
термін постачання 21-31 дні (днів)| TS10P06G D2G |
|
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 10A TS-6P
Description: BRIDGE RECT 1P 800V 10A TS-6P
товар відсутній
| TS10P06G C2G |
|
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 10A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: BRIDGE RECT 1P 800V 10A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товар відсутній
| TS10P06GHC2G |
|
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 10A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Grade: Automotive
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Qualification: AEC-Q101
Description: BRIDGE RECT 1P 800V 10A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Grade: Automotive
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Qualification: AEC-Q101
товар відсутній
| TS10P06GHD2G |
|
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 10A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Grade: Automotive
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
Description: BRIDGE RECT 1P 800V 10A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Grade: Automotive
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
товар відсутній
| 1.5SMC30CA V7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 25.6VWM 41.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 25.6VWM 41.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
товар відсутній
| 1.5SMC30CA V7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 25.6VWM 41.4VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 25.6VWM 41.4VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
на замовлення 11 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 94.99 грн |
| 10+ | 74.48 грн |
| SMCJ70A V7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 70VWM 113VC DO214AB
Description: TVS DIODE 70VWM 113VC DO214AB
на замовлення 1640 шт:
термін постачання 21-31 дні (днів)| P6SMB160AHM4G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 136VWM 219VC DO214AA
Description: TVS DIODE 136VWM 219VC DO214AA
товар відсутній
| TSM4ND60CI C0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 600V 4A ITO220
Description: MOSFET N-CH 600V 4A ITO220
на замовлення 464 шт:
термін постачання 21-31 дні (днів)| P4SMA6.8A M2G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 5.8VWM 10.5VC DO214AC
Description: TVS DIODE 5.8VWM 10.5VC DO214AC
товар відсутній
| P4SMA6.8AHM2G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 5.8VWM 10.5VC DO214AC
Description: TVS DIODE 5.8VWM 10.5VC DO214AC
товар відсутній
| P4SMA6.8A R3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 5.8VWM 10.5VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 40A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.46V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Description: TVS DIODE 5.8VWM 10.5VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 40A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.46V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 400W
Power Line Protection: No
товар відсутній