Продукція > TAIWAN SEMICONDUCTOR CORPORATION > Всі товари виробника TAIWAN SEMICONDUCTOR CORPORATION (23462) > Сторінка 185 з 392
Фото | Назва | Виробник | Інформація |
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S1GBHR5G | Taiwan Semiconductor Corporation |
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BZX79B56 A0G | Taiwan Semiconductor Corporation |
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TLD8S24AH | Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-218AB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: Automotive Current - Peak Pulse (10/1000µs): 170A Voltage - Reverse Standoff (Typ): 24V Supplier Device Package: DO-218AB Unidirectional Channels: 1 Voltage - Breakdown (Min): 26.7V Voltage - Clamping (Max) @ Ipp: 38.9V Power - Peak Pulse: 6600W (6.6kW) Power Line Protection: No Part Status: Active |
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TLD8S24AH | Taiwan Semiconductor Corporation |
![]() Packaging: Cut Tape (CT) Package / Case: DO-218AB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: Automotive Current - Peak Pulse (10/1000µs): 170A Voltage - Reverse Standoff (Typ): 24V Supplier Device Package: DO-218AB Unidirectional Channels: 1 Voltage - Breakdown (Min): 26.7V Voltage - Clamping (Max) @ Ipp: 38.9V Power - Peak Pulse: 6600W (6.6kW) Power Line Protection: No Part Status: Active |
на замовлення 346 шт: термін постачання 21-31 дні (днів) |
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MBR10H200CT C0G | Taiwan Semiconductor Corporation |
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на замовлення 915 шт: термін постачання 21-31 дні (днів) |
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TS2937CP50 ROG | Taiwan Semiconductor Corporation |
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TS2937CZ33 C0G | Taiwan Semiconductor Corporation |
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TS2937CZ50 C0G | Taiwan Semiconductor Corporation |
![]() Packaging: Tube Package / Case: TO-220-3 Output Type: Fixed Mounting Type: Through Hole Current - Output: 500mA Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Voltage - Input (Max): 26V Number of Regulators: 1 Supplier Device Package: TO-220 Voltage - Output (Min/Fixed): 5V Control Features: Current Limit Part Status: Active Voltage Dropout (Max): 0.7V @ 500mA Protection Features: Over Voltage, Thermal Shutdown, Transient Voltage Current - Supply (Max): 25 mA |
на замовлення 3958 шт: термін постачання 21-31 дні (днів) |
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BZD27C30PW | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 30V 1W SOD123W Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: SOD-123W Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 30 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOD-123W Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 22 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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MBS4 RCG | Taiwan Semiconductor Corporation |
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на замовлення 944 шт: термін постачання 21-31 дні (днів) |
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SK33A R3G | Taiwan Semiconductor Corporation |
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SK33AHR3G | Taiwan Semiconductor Corporation |
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TSM4N90CZ C0G | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 900V 4A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 4Ohm @ 2A, 10V Power Dissipation (Max): 38.7W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 25 V |
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UDZS4V3B RRG | Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 4.3 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: SOD-323F Part Status: Active Power - Max: 200 mW Current - Reverse Leakage @ Vr: 2.7 µA @ 1 V |
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BZY55C12 RYG | Taiwan Semiconductor Corporation |
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BZY55C16 RYG | Taiwan Semiconductor Corporation |
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BZY55C3V3 RYG | Taiwan Semiconductor Corporation |
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BZY55C3V6 RYG | Taiwan Semiconductor Corporation |
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BZY55C3V9 RYG | Taiwan Semiconductor Corporation |
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BZY55B11 RYG | Taiwan Semiconductor Corporation |
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BZY55B16 RYG | Taiwan Semiconductor Corporation |
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BZY55B20 RYG | Taiwan Semiconductor Corporation |
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BZY55B22 RYG | Taiwan Semiconductor Corporation |
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BZY55B27 RYG | Taiwan Semiconductor Corporation |
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BZY55B12 RYG | Taiwan Semiconductor Corporation |
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TST20L60CW C0G | Taiwan Semiconductor Corporation |
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на замовлення 925 шт: термін постачання 21-31 дні (днів) |
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KBP157G C2 | Taiwan Semiconductor Corporation |
![]() Packaging: Tube Package / Case: 4-SIP, KBP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBP Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
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KBP157G C2G | Taiwan Semiconductor Corporation |
![]() Packaging: Tube Package / Case: 4-SIP, KBP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBP Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
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TS431ACX RFG | Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Tolerance: ±1% Package / Case: TO-236-3, SC-59, SOT-23-3 Temperature Coefficient: 50ppm/°C Output Type: Programmable Mounting Type: Surface Mount Reference Type: Shunt Operating Temperature: 0°C ~ 70°C Supplier Device Package: SOT-23 Voltage - Output (Min/Fixed): 2.495V Part Status: Obsolete Current - Cathode: 600 µA Current - Output: 100 mA Voltage - Output (Max): 36 V |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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KBP152G C2 | Taiwan Semiconductor Corporation |
![]() Packaging: Tube Package / Case: 4-SIP, KBP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBP Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
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KBP152G C2G | Taiwan Semiconductor Corporation |
![]() Packaging: Tube Package / Case: 4-SIP, KBP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBP Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
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SMF6.5A RVG | Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: SOD-123W Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 17.9A Voltage - Reverse Standoff (Typ): 6.5V Supplier Device Package: SOD-123W Unidirectional Channels: 1 Voltage - Breakdown (Min): 7.22V Voltage - Clamping (Max) @ Ipp: 11.2V Power - Peak Pulse: 200W Power Line Protection: No Part Status: Active |
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SMF6.5A RVG | Taiwan Semiconductor Corporation |
![]() Packaging: Cut Tape (CT) Package / Case: SOD-123W Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 17.9A Voltage - Reverse Standoff (Typ): 6.5V Supplier Device Package: SOD-123W Unidirectional Channels: 1 Voltage - Breakdown (Min): 7.22V Voltage - Clamping (Max) @ Ipp: 11.2V Power - Peak Pulse: 200W Power Line Protection: No Part Status: Active |
на замовлення 8 шт: термін постачання 21-31 дні (днів) |
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SMF6.5A RQG | Taiwan Semiconductor Corporation |
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SMF6.5AHRQG | Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: SOD-123W Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 17.9A Voltage - Reverse Standoff (Typ): 6.5V Supplier Device Package: SOD-123W Unidirectional Channels: 1 Voltage - Breakdown (Min): 7.22V Voltage - Clamping (Max) @ Ipp: 11.2V Power - Peak Pulse: 200W Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
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SMF6.5AHRVG | Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: SOD-123W Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 17.9A Voltage - Reverse Standoff (Typ): 6.5V Supplier Device Package: SOD-123W Unidirectional Channels: 1 Voltage - Breakdown (Min): 7.22V Voltage - Clamping (Max) @ Ipp: 11.2V Power - Peak Pulse: 200W Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
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1SMA5933 M2G | Taiwan Semiconductor Corporation |
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1SMA5933HM2G | Taiwan Semiconductor Corporation |
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1SMA5933 R3G | Taiwan Semiconductor Corporation |
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1SMA5933HR3G | Taiwan Semiconductor Corporation |
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SFS1606G MNG | Taiwan Semiconductor Corporation |
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SFS1608G MNG | Taiwan Semiconductor Corporation |
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SFS1606GHMNG | Taiwan Semiconductor Corporation |
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SFS1608GHMNG | Taiwan Semiconductor Corporation |
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TWSES1DR2 | Taiwan Semiconductor Corporation | Description: TWSES1DR2 |
на замовлення 210600 шт: термін постачання 21-31 дні (днів) |
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MMSZ5234B RHG | Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: SOD-123F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 6.2 V Impedance (Max) (Zzt): 7 Ohms Supplier Device Package: SOD-123F Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 5 µA @ 4 V |
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SMF8.0AHRVG | Taiwan Semiconductor Corporation |
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на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SMF8.0AHRVG | Taiwan Semiconductor Corporation |
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на замовлення 5960 шт: термін постачання 21-31 дні (днів) |
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TSM301K12CQ RFG | Taiwan Semiconductor Corporation |
Description: MOSFET P-CH 20V 4.5A 6TDFN Packaging: Tape & Reel (TR) Package / Case: 6-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 94mOhm @ 2.8A, 4.5V Power Dissipation (Max): 6.5W (Tc) Vgs(th) (Max) @ Id: 500mV @ 250µA (Min) Supplier Device Package: 6-TDFN (2x2) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5.2 pF @ 6 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TSM301K12CQ RFG | Taiwan Semiconductor Corporation |
Description: MOSFET P-CH 20V 4.5A 6TDFN Packaging: Cut Tape (CT) Package / Case: 6-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 94mOhm @ 2.8A, 4.5V Power Dissipation (Max): 6.5W (Tc) Vgs(th) (Max) @ Id: 500mV @ 250µA (Min) Supplier Device Package: 6-TDFN (2x2) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5.2 pF @ 6 V |
на замовлення 6434 шт: термін постачання 21-31 дні (днів) |
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P4KE120A R0G | Taiwan Semiconductor Corporation |
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P4KE120AHR0G | Taiwan Semiconductor Corporation |
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P4KE120CA R0G | Taiwan Semiconductor Corporation |
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P4KE120CAHR0G | Taiwan Semiconductor Corporation |
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SS22HM4G | Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 125°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Current - Reverse Leakage @ Vr: 400 µA @ 20 V Qualification: AEC-Q101 |
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SS22HR5G | Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 125°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Current - Reverse Leakage @ Vr: 400 µA @ 20 V Qualification: AEC-Q101 |
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TBS410 M1G | Taiwan Semiconductor Corporation |
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на замовлення 1800 шт: термін постачання 21-31 дні (днів) |
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TBS410 M1G | Taiwan Semiconductor Corporation |
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на замовлення 1969 шт: термін постачання 21-31 дні (днів) |
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HER3003PT C0G | Taiwan Semiconductor Corporation |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-247AD (TO-3P) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
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1SMA5937 R3G | Taiwan Semiconductor Corporation |
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S1GBHR5G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO214AA
Description: DIODE GEN PURP 400V 1A DO214AA
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BZX79B56 A0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 56V 500MW DO35
Description: DIODE ZENER 56V 500MW DO35
товар відсутній
TLD8S24AH |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 24VWM 38.9VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 170A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 24VWM 38.9VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 170A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Part Status: Active
товар відсутній
TLD8S24AH |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 24VWM 38.9VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 170A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 24VWM 38.9VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 170A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Part Status: Active
на замовлення 346 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
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1+ | 506.6 грн |
10+ | 438.11 грн |
100+ | 358.98 грн |
MBR10H200CT C0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 10A TO220AB
Description: DIODE SCHOTTKY 200V 10A TO220AB
на замовлення 915 шт:
термін постачання 21-31 дні (днів)TS2937CP50 ROG |
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Виробник: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 5V 500MA TO252
Description: IC REG LINEAR 5V 500MA TO252
товар відсутній
TS2937CZ33 C0G |
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Виробник: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 3.3V 500MA TO220
Description: IC REG LINEAR 3.3V 500MA TO220
товар відсутній
TS2937CZ50 C0G |
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Виробник: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 5V 500MA TO220
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: TO-220
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
Part Status: Active
Voltage Dropout (Max): 0.7V @ 500mA
Protection Features: Over Voltage, Thermal Shutdown, Transient Voltage
Current - Supply (Max): 25 mA
Description: IC REG LINEAR 5V 500MA TO220
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: TO-220
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
Part Status: Active
Voltage Dropout (Max): 0.7V @ 500mA
Protection Features: Over Voltage, Thermal Shutdown, Transient Voltage
Current - Supply (Max): 25 mA
на замовлення 3958 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 157.56 грн |
10+ | 136.55 грн |
25+ | 128.81 грн |
100+ | 103 грн |
250+ | 96.71 грн |
500+ | 84.62 грн |
1000+ | 68.97 грн |
2500+ | 67.31 грн |
BZD27C30PW |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 30V 1W SOD123W
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123W
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 22 V
Description: DIODE ZENER 30V 1W SOD123W
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123W
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 22 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10000+ | 6.41 грн |
MBS4 RCG |
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Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 400V 800MA MBS
Description: BRIDGE RECT 1P 400V 800MA MBS
на замовлення 944 шт:
термін постачання 21-31 дні (днів)SK33A R3G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 3A DO214AC
Description: DIODE SCHOTTKY 30V 3A DO214AC
товар відсутній
SK33AHR3G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 3A DO214AC
Description: DIODE SCHOTTKY 30V 3A DO214AC
товар відсутній
TSM4N90CZ C0G |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 900V 4A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 2A, 10V
Power Dissipation (Max): 38.7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 25 V
Description: MOSFET N-CHANNEL 900V 4A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 2A, 10V
Power Dissipation (Max): 38.7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 25 V
товар відсутній
UDZS4V3B RRG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.3V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 2.7 µA @ 1 V
Description: DIODE ZENER 4.3V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 2.7 µA @ 1 V
товар відсутній
BZY55C12 RYG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 500MW 0805
Description: DIODE ZENER 12V 500MW 0805
товар відсутній
BZY55C16 RYG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 16V 500MW 0805
Description: DIODE ZENER 16V 500MW 0805
товар відсутній
BZY55C3V3 RYG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.3V 500MW 0805
Description: DIODE ZENER 3.3V 500MW 0805
товар відсутній
BZY55C3V6 RYG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.6V 500MW 0805
Description: DIODE ZENER 3.6V 500MW 0805
товар відсутній
BZY55C3V9 RYG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.9V 500MW 0805
Description: DIODE ZENER 3.9V 500MW 0805
товар відсутній
BZY55B11 RYG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 11V 500MW 0805
Description: DIODE ZENER 11V 500MW 0805
товар відсутній
BZY55B16 RYG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 16V 500MW 0805
Description: DIODE ZENER 16V 500MW 0805
товар відсутній
BZY55B20 RYG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 20V 500MW 0805
Description: DIODE ZENER 20V 500MW 0805
товар відсутній
BZY55B22 RYG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 500MW 0805
Description: DIODE ZENER 22V 500MW 0805
товар відсутній
BZY55B27 RYG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 27V 500MW 0805
Description: DIODE ZENER 27V 500MW 0805
товар відсутній
BZY55B12 RYG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 500MW 0805
Description: DIODE ZENER 12V 500MW 0805
товар відсутній
TST20L60CW C0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 10A TO220AB
Description: DIODE SCHOTTKY 60V 10A TO220AB
на замовлення 925 шт:
термін постачання 21-31 дні (днів)KBP157G C2 |
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Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 1.5A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 1.5A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товар відсутній
KBP157G C2G |
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Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 1.5A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 1.5A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товар відсутній
TS431ACX RFG |
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Виробник: Taiwan Semiconductor Corporation
Description: IC VREF SHUNT 36V 1% SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 50ppm/°C
Output Type: Programmable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C
Supplier Device Package: SOT-23
Voltage - Output (Min/Fixed): 2.495V
Part Status: Obsolete
Current - Cathode: 600 µA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Description: IC VREF SHUNT 36V 1% SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 50ppm/°C
Output Type: Programmable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C
Supplier Device Package: SOT-23
Voltage - Output (Min/Fixed): 2.495V
Part Status: Obsolete
Current - Cathode: 600 µA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 8.6 грн |
6000+ | 7.78 грн |
KBP152G C2 |
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Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 100V 1.5A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: BRIDGE RECT 1PHASE 100V 1.5A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
KBP152G C2G |
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Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 100V 1.5A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: BRIDGE RECT 1PHASE 100V 1.5A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
SMF6.5A RVG |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 6.5VWM 11.2VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 17.9A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 6.5VWM 11.2VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 17.9A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
товар відсутній
SMF6.5A RVG |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 6.5VWM 11.2VC SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 17.9A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 6.5VWM 11.2VC SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 17.9A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
на замовлення 8 шт:
термін постачання 21-31 дні (днів)SMF6.5A RQG |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 6.5VWM 11.2VC SOD123W
Description: TVS DIODE 6.5VWM 11.2VC SOD123W
товар відсутній
SMF6.5AHRQG |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 6.5VWM 11.2VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 17.9A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 6.5VWM 11.2VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 17.9A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
SMF6.5AHRVG |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 6.5VWM 11.2VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 17.9A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 6.5VWM 11.2VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 17.9A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
1SMA5933 M2G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 1.5W DO214AC
Description: DIODE ZENER 22V 1.5W DO214AC
товар відсутній
1SMA5933HM2G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 1.5W DO214AC
Description: DIODE ZENER 22V 1.5W DO214AC
товар відсутній
1SMA5933 R3G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 1.5W DO214AC
Description: DIODE ZENER 22V 1.5W DO214AC
товар відсутній
1SMA5933HR3G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 1.5W DO214AC
Description: DIODE ZENER 22V 1.5W DO214AC
товар відсутній
SFS1606G MNG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 16A TO263AB
Description: DIODE GEN PURP 400V 16A TO263AB
товар відсутній
SFS1608G MNG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 16A TO263AB
Description: DIODE GEN PURP 600V 16A TO263AB
товар відсутній
SFS1606GHMNG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 16A TO263AB
Description: DIODE GEN PURP 400V 16A TO263AB
товар відсутній
SFS1608GHMNG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 16A TO263AB
Description: DIODE GEN PURP 600V 16A TO263AB
товар відсутній
TWSES1DR2 |
Виробник: Taiwan Semiconductor Corporation
Description: TWSES1DR2
Description: TWSES1DR2
на замовлення 210600 шт:
термін постачання 21-31 дні (днів)MMSZ5234B RHG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.2V 500MW SOD123F
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 5 µA @ 4 V
Description: DIODE ZENER 6.2V 500MW SOD123F
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 5 µA @ 4 V
товар відсутній
SMF8.0AHRVG |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC SOD123W
Description: TVS DIODE 8VWM 13.6VC SOD123W
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)SMF8.0AHRVG |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 8VWM 13.6VC SOD123W
Description: TVS DIODE 8VWM 13.6VC SOD123W
на замовлення 5960 шт:
термін постачання 21-31 дні (днів)TSM301K12CQ RFG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET P-CH 20V 4.5A 6TDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 94mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 6.5W (Tc)
Vgs(th) (Max) @ Id: 500mV @ 250µA (Min)
Supplier Device Package: 6-TDFN (2x2)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5.2 pF @ 6 V
Description: MOSFET P-CH 20V 4.5A 6TDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 94mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 6.5W (Tc)
Vgs(th) (Max) @ Id: 500mV @ 250µA (Min)
Supplier Device Package: 6-TDFN (2x2)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5.2 pF @ 6 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 23.23 грн |
TSM301K12CQ RFG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET P-CH 20V 4.5A 6TDFN
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 94mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 6.5W (Tc)
Vgs(th) (Max) @ Id: 500mV @ 250µA (Min)
Supplier Device Package: 6-TDFN (2x2)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5.2 pF @ 6 V
Description: MOSFET P-CH 20V 4.5A 6TDFN
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 94mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 6.5W (Tc)
Vgs(th) (Max) @ Id: 500mV @ 250µA (Min)
Supplier Device Package: 6-TDFN (2x2)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5.2 pF @ 6 V
на замовлення 6434 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 61.06 грн |
10+ | 51.03 грн |
100+ | 35.32 грн |
500+ | 27.7 грн |
1000+ | 23.57 грн |
P4KE120A R0G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 102VWM 165VC DO204AL
Description: TVS DIODE 102VWM 165VC DO204AL
товар відсутній
P4KE120AHR0G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 102VWM 165VC DO204AL
Description: TVS DIODE 102VWM 165VC DO204AL
товар відсутній
P4KE120CA R0G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 102VWM 165VC DO204AL
Description: TVS DIODE 102VWM 165VC DO204AL
товар відсутній
P4KE120CAHR0G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 102VWM 165VC DO204AL
Description: TVS DIODE 102VWM 165VC DO204AL
товар відсутній
SS22HM4G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 20 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 20V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 20 V
Qualification: AEC-Q101
товар відсутній
SS22HR5G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 20 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 20V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 20 V
Qualification: AEC-Q101
товар відсутній
TBS410 M1G |
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Виробник: Taiwan Semiconductor Corporation
Description: 4A 1000V STANDARD BRIDGE RECTIFI
Description: 4A 1000V STANDARD BRIDGE RECTIFI
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)TBS410 M1G |
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Виробник: Taiwan Semiconductor Corporation
Description: 4A 1000V STANDARD BRIDGE RECTIFI
Description: 4A 1000V STANDARD BRIDGE RECTIFI
на замовлення 1969 шт:
термін постачання 21-31 дні (днів)HER3003PT C0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 200V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE ARRAY GP 200V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
1SMA5937 R3G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 33V 1.5W DO214AC
Description: DIODE ZENER 33V 1.5W DO214AC
товар відсутній