Продукція > TAIWAN SEMICONDUCTOR CORPORATION > Всі товари виробника TAIWAN SEMICONDUCTOR CORPORATION (23679) > Сторінка 184 з 395
| Фото | Назва | Виробник | Інформація |
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1SMB5954 R5G | Taiwan Semiconductor Corporation |
 Description: DIODE ZENER 160V 3W DO214AAPackaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 160 V Impedance (Max) (Zzt): 700 Ohms Supplier Device Package: DO-214AA (SMB) Power - Max: 3 W Current - Reverse Leakage @ Vr: 1 µA @ 121.6 V |
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1SMB5954HR5G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 160V 3W DO214AA Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 160 V Impedance (Max) (Zzt): 700 Ohms Supplier Device Package: DO-214AA (SMB) Power - Max: 3 W Current - Reverse Leakage @ Vr: 1 µA @ 121.6 V |
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SMA6J30AHR3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 30VWM 48.4VC DO214AC |
на замовлення 3600 шт: термін постачання 21-31 дні (днів) |
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SMA6J30AHR3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 30VWM 48.4VC DO214AC |
на замовлення 4272 шт: термін постачання 21-31 дні (днів) |
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SMB10J30A R5G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 30VWM 48.4VC DO214AA |
на замовлення 3400 шт: термін постачання 21-31 дні (днів) |
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SMB10J30A R5G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 30VWM 48.4VC DO214AA |
на замовлення 3786 шт: термін постачання 21-31 дні (днів) |
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TS20P07G C2G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 1KV 20A TS-6P |
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TS20P07GHC2G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 1KV 20A TS-6P |
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MMBT3906L RFG | Taiwan Semiconductor Corporation |
Description: TRANS PNP 40V 0.2A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 250MHz Supplier Device Package: SOT-23 Part Status: Obsolete Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 350 mW |
на замовлення 54000 шт: термін постачання 21-31 дні (днів) |
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MMBT3906L RFG | Taiwan Semiconductor Corporation |
Description: TRANS PNP 40V 0.2A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 250MHz Supplier Device Package: SOT-23 Part Status: Obsolete Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 350 mW |
на замовлення 65946 шт: термін постачання 21-31 дні (днів) |
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TSD1GH | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 1A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 14pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 400 V Current - Reverse Leakage @ Vr: 1 µA @ 400 V Qualification: AEC-Q101 |
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TSD1GH | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 1A DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 14pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 400 V Current - Reverse Leakage @ Vr: 1 µA @ 400 V Qualification: AEC-Q101 |
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GBU2507 D2 | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 1KV 25A GBU Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Discontinued at Digi-Key Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
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LL5819 L0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 40V 1A MELF Packaging: Tape & Reel (TR) Package / Case: DO-213AB, MELF Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 110pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: MELF Operating Temperature - Junction: -65°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A Current - Reverse Leakage @ Vr: 500 µA @ 40 V |
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| LL5819-J0 L0 | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 40V 1A MELF Packaging: Tape & Reel (TR) Package / Case: DO-213AB, MELF Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 110pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: MELF Operating Temperature - Junction: -65°C ~ 125°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A Current - Reverse Leakage @ Vr: 500 µA @ 40 V |
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P4SMA8.2A M2G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 7.02VWM 12.1VC DO214AC |
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1SMA4738HM2G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 8.2V 1.25W DO214AC Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 8.2 V Impedance (Max) (Zzt): 4.5 Ohms Supplier Device Package: DO-214AC (SMA) Grade: Automotive Power - Max: 1.25 W Current - Reverse Leakage @ Vr: 5 µA @ 6 V Qualification: AEC-Q101 |
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SMCJ78A R7G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 78VWM 126VC DO214AB |
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SR3050PT C0G | Taiwan Semiconductor Corporation |
Description: DIODE ARRAY SCHOTTKY 50V TO247AD |
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SR3050PTHC0G | Taiwan Semiconductor Corporation |
Description: DIODE ARRAY SCHOTTKY 50V TO247AD |
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S1GBHM4G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 1A DO214AA |
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S1GB R5G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 1A DO214AA |
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S1GBHR5G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 1A DO214AA |
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BZX79B56 A0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 56V 500MW DO35 |
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TLD8S24AH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 24VWM 38.9VC DO218AB Packaging: Tape & Reel (TR) Package / Case: DO-218AB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 170A Voltage - Reverse Standoff (Typ): 24V Supplier Device Package: DO-218AB Unidirectional Channels: 1 Voltage - Breakdown (Min): 26.7V Voltage - Clamping (Max) @ Ipp: 38.9V Power - Peak Pulse: 6600W (6.6kW) Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
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TLD8S24AH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 24VWM 38.9VC DO218AB Packaging: Cut Tape (CT) Package / Case: DO-218AB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 170A Voltage - Reverse Standoff (Typ): 24V Supplier Device Package: DO-218AB Unidirectional Channels: 1 Voltage - Breakdown (Min): 26.7V Voltage - Clamping (Max) @ Ipp: 38.9V Power - Peak Pulse: 6600W (6.6kW) Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 231 шт: термін постачання 21-31 дні (днів) |
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MBR10H200CT C0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 200V 10A TO220AB |
на замовлення 915 шт: термін постачання 21-31 дні (днів) |
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TS2937CZ33 C0G | Taiwan Semiconductor Corporation |
Description: IC REG LINEAR 3.3V 500MA TO220 |
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TS2937CZ50 C0G | Taiwan Semiconductor Corporation |
Description: IC REG LINEAR 5V 500MA TO220 Packaging: Tube Package / Case: TO-220-3 Output Type: Fixed Mounting Type: Through Hole Current - Output: 500mA Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Voltage - Input (Max): 26V Number of Regulators: 1 Supplier Device Package: TO-220 Voltage - Output (Min/Fixed): 5V Control Features: Current Limit Part Status: Active Voltage Dropout (Max): 0.7V @ 500mA Protection Features: Over Voltage, Thermal Shutdown, Transient Voltage Current - Supply (Max): 25 mA |
на замовлення 3958 шт: термін постачання 21-31 дні (днів) |
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BZD27C30PW | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 30V 1W SOD123W Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: SOD-123W Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 30 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOD-123W Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 22 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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MBS4 RCG | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1P 400V 800MA MBS |
на замовлення 944 шт: термін постачання 21-31 дні (днів) |
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SK33A R3G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 30V 3A DO214AC |
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SK33AHR3G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 30V 3A DO214AC |
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TSM4N90CZ C0G | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 900V 4A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 4Ohm @ 2A, 10V Power Dissipation (Max): 38.7W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 25 V |
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UDZS4V3B RRG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 4.3V 200MW SOD323F Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 4.3 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: SOD-323F Part Status: Active Power - Max: 200 mW Current - Reverse Leakage @ Vr: 2.7 µA @ 1 V |
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| BZY55C12 RYG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 12V 500MW 0805 |
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RYG.jpg "BZY55C16 RYG") |
BZY55C16 RYG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 16V 500MW 0805 |
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BZY55C3V3 RYG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 3.3V 500MW 0805 |
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BZY55C3V6 RYG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 3.6V 500MW 0805 |
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BZY55C3V9 RYG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 3.9V 500MW 0805 |
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BZY55B11 RYG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 11V 500MW 0805 |
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BZY55B16 RYG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 16V 500MW 0805 |
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BZY55B20 RYG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 20V 500MW 0805 |
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BZY55B22 RYG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 22V 500MW 0805 |
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BZY55B27 RYG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 27V 500MW 0805 |
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BZY55B12 RYG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 12V 500MW 0805 |
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TST20L60CW C0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 10A TO220AB |
на замовлення 925 шт: термін постачання 21-31 дні (днів) |
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| KBP157G C2 | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 1KV 1.5A KBP Packaging: Tube Package / Case: 4-SIP, KBP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBP Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
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| KBP157G C2G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 1KV 1.5A KBP Packaging: Tube Package / Case: 4-SIP, KBP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBP Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
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TS431ACX RFG | Taiwan Semiconductor Corporation |
Description: IC VREF SHUNT 36V 1% SOT23 Tolerance: ±1% Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Temperature Coefficient: 50ppm/°C Output Type: Programmable Mounting Type: Surface Mount Reference Type: Shunt Operating Temperature: 0°C ~ 70°C Supplier Device Package: SOT-23 Voltage - Output (Min/Fixed): 2.495V Part Status: Obsolete Current - Cathode: 600 µA Current - Output: 100 mA Voltage - Output (Max): 36 V |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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| KBP152G C2 | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 100V 1.5A KBP Packaging: Tube Package / Case: 4-SIP, KBP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBP Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
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| KBP152G C2G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 100V 1.5A KBP Packaging: Tube Package / Case: 4-SIP, KBP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBP Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
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SMF6.5A RVG | Taiwan Semiconductor Corporation |
Description: TVS DIODE 6.5VWM 11.2VC SOD123W Packaging: Tape & Reel (TR) Package / Case: SOD-123W Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 17.9A Voltage - Reverse Standoff (Typ): 6.5V Supplier Device Package: SOD-123W Unidirectional Channels: 1 Voltage - Breakdown (Min): 7.22V Voltage - Clamping (Max) @ Ipp: 11.2V Power - Peak Pulse: 200W Power Line Protection: No Part Status: Active |
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SMF6.5A RVG | Taiwan Semiconductor Corporation |
Description: TVS DIODE 6.5VWM 11.2VC SOD123W Packaging: Cut Tape (CT) Package / Case: SOD-123W Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 17.9A Voltage - Reverse Standoff (Typ): 6.5V Supplier Device Package: SOD-123W Unidirectional Channels: 1 Voltage - Breakdown (Min): 7.22V Voltage - Clamping (Max) @ Ipp: 11.2V Power - Peak Pulse: 200W Power Line Protection: No Part Status: Active |
на замовлення 8 шт: термін постачання 21-31 дні (днів) |
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SMF6.5A RQG | Taiwan Semiconductor Corporation |
Description: TVS DIODE 6.5VWM 11.2VC SOD123W |
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SMF6.5AHRQG | Taiwan Semiconductor Corporation |
Description: TVS DIODE 6.5VWM 11.2VC SOD123W Packaging: Tape & Reel (TR) Package / Case: SOD-123W Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 17.9A Voltage - Reverse Standoff (Typ): 6.5V Supplier Device Package: SOD-123W Unidirectional Channels: 1 Voltage - Breakdown (Min): 7.22V Voltage - Clamping (Max) @ Ipp: 11.2V Power - Peak Pulse: 200W Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
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SMF6.5AHRVG | Taiwan Semiconductor Corporation |
Description: TVS DIODE 6.5VWM 11.2VC SOD123W Packaging: Tape & Reel (TR) Package / Case: SOD-123W Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 17.9A Voltage - Reverse Standoff (Typ): 6.5V Supplier Device Package: SOD-123W Unidirectional Channels: 1 Voltage - Breakdown (Min): 7.22V Voltage - Clamping (Max) @ Ipp: 11.2V Power - Peak Pulse: 200W Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
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1SMA5933 M2G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 22V 1.5W DO214AC |
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1SMA5933HM2G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 22V 1.5W DO214AC |
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1SMA5933 R3G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 22V 1.5W DO214AC |
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| 1SMB5954 R5G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 160V 3W DO214AA
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 700 Ohms
Supplier Device Package: DO-214AA (SMB)
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 1 µA @ 121.6 V
Description: DIODE ZENER 160V 3W DO214AA
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 700 Ohms
Supplier Device Package: DO-214AA (SMB)
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 1 µA @ 121.6 V
товар відсутній
| 1SMB5954HR5G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 160V 3W DO214AA
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 700 Ohms
Supplier Device Package: DO-214AA (SMB)
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 1 µA @ 121.6 V
Description: DIODE ZENER 160V 3W DO214AA
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 700 Ohms
Supplier Device Package: DO-214AA (SMB)
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 1 µA @ 121.6 V
товар відсутній
| SMA6J30AHR3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 30VWM 48.4VC DO214AC
Description: TVS DIODE 30VWM 48.4VC DO214AC
на замовлення 3600 шт:
термін постачання 21-31 дні (днів)| SMA6J30AHR3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 30VWM 48.4VC DO214AC
Description: TVS DIODE 30VWM 48.4VC DO214AC
на замовлення 4272 шт:
термін постачання 21-31 дні (днів)| SMB10J30A R5G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 30VWM 48.4VC DO214AA
Description: TVS DIODE 30VWM 48.4VC DO214AA
на замовлення 3400 шт:
термін постачання 21-31 дні (днів)| SMB10J30A R5G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 30VWM 48.4VC DO214AA
Description: TVS DIODE 30VWM 48.4VC DO214AA
на замовлення 3786 шт:
термін постачання 21-31 дні (днів)| TS20P07G C2G |
|
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 20A TS-6P
Description: BRIDGE RECT 1PHASE 1KV 20A TS-6P
товар відсутній
| TS20P07GHC2G |
|
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 20A TS-6P
Description: BRIDGE RECT 1PHASE 1KV 20A TS-6P
товар відсутній
| MMBT3906L RFG |
Виробник: Taiwan Semiconductor Corporation
Description: TRANS PNP 40V 0.2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 350 mW
Description: TRANS PNP 40V 0.2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 350 mW
на замовлення 54000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 2.11 грн |
| 6000+ | 1.92 грн |
| 9000+ | 1.63 грн |
| 30000+ | 1.42 грн |
| MMBT3906L RFG |
Виробник: Taiwan Semiconductor Corporation
Description: TRANS PNP 40V 0.2A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 350 mW
Description: TRANS PNP 40V 0.2A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 350 mW
на замовлення 65946 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 11.4 грн |
| 45+ | 6.52 грн |
| 100+ | 4.01 грн |
| 500+ | 2.73 грн |
| 1000+ | 2.4 грн |
| TSD1GH |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 14pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 400V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 14pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
товар відсутній
| TSD1GH |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 14pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 400V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 14pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: AEC-Q101
товар відсутній
| GBU2507 D2 |
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 25A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Discontinued at Digi-Key
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 25A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Discontinued at Digi-Key
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товар відсутній
| LL5819 L0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 1A MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MELF
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Description: DIODE SCHOTTKY 40V 1A MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MELF
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
товар відсутній
| LL5819-J0 L0 |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 1A MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MELF
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Description: DIODE SCHOTTKY 40V 1A MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MELF
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
товар відсутній
| P4SMA8.2A M2G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 7.02VWM 12.1VC DO214AC
Description: TVS DIODE 7.02VWM 12.1VC DO214AC
товар відсутній
| 1SMA4738HM2G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 8.2V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 4.5 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1.25 W
Current - Reverse Leakage @ Vr: 5 µA @ 6 V
Qualification: AEC-Q101
Description: DIODE ZENER 8.2V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 4.5 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1.25 W
Current - Reverse Leakage @ Vr: 5 µA @ 6 V
Qualification: AEC-Q101
товар відсутній
| SMCJ78A R7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 78VWM 126VC DO214AB
Description: TVS DIODE 78VWM 126VC DO214AB
товар відсутній
| SR3050PT C0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 50V TO247AD
Description: DIODE ARRAY SCHOTTKY 50V TO247AD
товар відсутній
| SR3050PTHC0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 50V TO247AD
Description: DIODE ARRAY SCHOTTKY 50V TO247AD
товар відсутній
| S1GBHM4G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO214AA
Description: DIODE GEN PURP 400V 1A DO214AA
товар відсутній
| S1GB R5G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO214AA
Description: DIODE GEN PURP 400V 1A DO214AA
товар відсутній
| S1GBHR5G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO214AA
Description: DIODE GEN PURP 400V 1A DO214AA
товар відсутній
| BZX79B56 A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 56V 500MW DO35
Description: DIODE ZENER 56V 500MW DO35
товар відсутній
| TLD8S24AH |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 24VWM 38.9VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 170A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 24VWM 38.9VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 170A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
| TLD8S24AH |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 24VWM 38.9VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 170A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 24VWM 38.9VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 170A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 231 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 192.36 грн |
| 10+ | 154.04 грн |
| 100+ | 122.63 грн |
| MBR10H200CT C0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 10A TO220AB
Description: DIODE SCHOTTKY 200V 10A TO220AB
на замовлення 915 шт:
термін постачання 21-31 дні (днів)| TS2937CZ33 C0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 3.3V 500MA TO220
Description: IC REG LINEAR 3.3V 500MA TO220
товар відсутній
| TS2937CZ50 C0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 5V 500MA TO220
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: TO-220
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
Part Status: Active
Voltage Dropout (Max): 0.7V @ 500mA
Protection Features: Over Voltage, Thermal Shutdown, Transient Voltage
Current - Supply (Max): 25 mA
Description: IC REG LINEAR 5V 500MA TO220
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: TO-220
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
Part Status: Active
Voltage Dropout (Max): 0.7V @ 500mA
Protection Features: Over Voltage, Thermal Shutdown, Transient Voltage
Current - Supply (Max): 25 mA
на замовлення 3958 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 158.9 грн |
| 10+ | 137.72 грн |
| 25+ | 129.91 грн |
| 100+ | 103.87 грн |
| 250+ | 97.54 грн |
| 500+ | 85.34 грн |
| 1000+ | 69.55 грн |
| 2500+ | 67.88 грн |
| BZD27C30PW |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 30V 1W SOD123W
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123W
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 22 V
Description: DIODE ZENER 30V 1W SOD123W
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123W
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 22 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 6.47 грн |
| MBS4 RCG |
|
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 400V 800MA MBS
Description: BRIDGE RECT 1P 400V 800MA MBS
на замовлення 944 шт:
термін постачання 21-31 дні (днів)| SK33A R3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 3A DO214AC
Description: DIODE SCHOTTKY 30V 3A DO214AC
товар відсутній
| SK33AHR3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 3A DO214AC
Description: DIODE SCHOTTKY 30V 3A DO214AC
товар відсутній
| TSM4N90CZ C0G |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 900V 4A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 2A, 10V
Power Dissipation (Max): 38.7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 25 V
Description: MOSFET N-CHANNEL 900V 4A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 2A, 10V
Power Dissipation (Max): 38.7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 25 V
товар відсутній
| UDZS4V3B RRG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.3V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 2.7 µA @ 1 V
Description: DIODE ZENER 4.3V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 2.7 µA @ 1 V
товар відсутній
| BZY55C12 RYG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 500MW 0805
Description: DIODE ZENER 12V 500MW 0805
товар відсутній
| BZY55C16 RYG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 16V 500MW 0805
Description: DIODE ZENER 16V 500MW 0805
товар відсутній
| BZY55C3V3 RYG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.3V 500MW 0805
Description: DIODE ZENER 3.3V 500MW 0805
товар відсутній
| BZY55C3V6 RYG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.6V 500MW 0805
Description: DIODE ZENER 3.6V 500MW 0805
товар відсутній
| BZY55C3V9 RYG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.9V 500MW 0805
Description: DIODE ZENER 3.9V 500MW 0805
товар відсутній
| BZY55B11 RYG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 11V 500MW 0805
Description: DIODE ZENER 11V 500MW 0805
товар відсутній
| BZY55B16 RYG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 16V 500MW 0805
Description: DIODE ZENER 16V 500MW 0805
товар відсутній
| BZY55B20 RYG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 20V 500MW 0805
Description: DIODE ZENER 20V 500MW 0805
товар відсутній
| BZY55B22 RYG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 500MW 0805
Description: DIODE ZENER 22V 500MW 0805
товар відсутній
| BZY55B27 RYG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 27V 500MW 0805
Description: DIODE ZENER 27V 500MW 0805
товар відсутній
| BZY55B12 RYG |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 500MW 0805
Description: DIODE ZENER 12V 500MW 0805
товар відсутній
| TST20L60CW C0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 10A TO220AB
Description: DIODE SCHOTTKY 60V 10A TO220AB
на замовлення 925 шт:
термін постачання 21-31 дні (днів)| KBP157G C2 |
|
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 1.5A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 1.5A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товар відсутній
| KBP157G C2G |
|
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 1.5A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 1.5A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товар відсутній
| TS431ACX RFG |
|
Виробник: Taiwan Semiconductor Corporation
Description: IC VREF SHUNT 36V 1% SOT23
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 50ppm/°C
Output Type: Programmable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C
Supplier Device Package: SOT-23
Voltage - Output (Min/Fixed): 2.495V
Part Status: Obsolete
Current - Cathode: 600 µA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Description: IC VREF SHUNT 36V 1% SOT23
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 50ppm/°C
Output Type: Programmable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C
Supplier Device Package: SOT-23
Voltage - Output (Min/Fixed): 2.495V
Part Status: Obsolete
Current - Cathode: 600 µA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 8.56 грн |
| 6000+ | 7.74 грн |
| KBP152G C2 |
|
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 100V 1.5A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: BRIDGE RECT 1PHASE 100V 1.5A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
| KBP152G C2G |
|
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 100V 1.5A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: BRIDGE RECT 1PHASE 100V 1.5A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
| SMF6.5A RVG |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 6.5VWM 11.2VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 17.9A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 6.5VWM 11.2VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 17.9A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
товар відсутній
| SMF6.5A RVG |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 6.5VWM 11.2VC SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 17.9A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 6.5VWM 11.2VC SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 17.9A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
на замовлення 8 шт:
термін постачання 21-31 дні (днів)| SMF6.5A RQG |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 6.5VWM 11.2VC SOD123W
Description: TVS DIODE 6.5VWM 11.2VC SOD123W
товар відсутній
| SMF6.5AHRQG |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 6.5VWM 11.2VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 17.9A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 6.5VWM 11.2VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 17.9A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
| SMF6.5AHRVG |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 6.5VWM 11.2VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 17.9A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 6.5VWM 11.2VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 17.9A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
| 1SMA5933 M2G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 1.5W DO214AC
Description: DIODE ZENER 22V 1.5W DO214AC
товар відсутній
| 1SMA5933HM2G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 1.5W DO214AC
Description: DIODE ZENER 22V 1.5W DO214AC
товар відсутній
| 1SMA5933 R3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 1.5W DO214AC
Description: DIODE ZENER 22V 1.5W DO214AC
товар відсутній