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TS10P06GHD2G Taiwan Semiconductor Corporation
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Description: BRIDGE RECT 1P 800V 10A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Grade: Automotive
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
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Технічний опис TS10P06GHD2G Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 10A TS-6P, Packaging: Tube, Package / Case: 4-SIP, TS-6P, Mounting Type: Through Hole, Diode Type: Single Phase, Operating Temperature: -55°C ~ 150°C (TJ), Technology: Standard, Supplier Device Package: TS-6P, Grade: Automotive, Voltage - Peak Reverse (Max): 800 V, Current - Average Rectified (Io): 10 A, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A, Current - Reverse Leakage @ Vr: 10 µA @ 1000 V, Qualification: AEC-Q101.