Продукція > TAIWAN SEMICONDUCTOR CORPORATION > Всі товари виробника TAIWAN SEMICONDUCTOR CORPORATION (23684) > Сторінка 180 з 395
Фото | Назва | Виробник | Інформація |
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MTZJ8V2SC R0G | Taiwan Semiconductor Corporation |
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1PGSMA180Z M2G | Taiwan Semiconductor Corporation |
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TSPB5H100S S1G | Taiwan Semiconductor Corporation |
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на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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HS3D-K M6G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 3A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 53pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
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HS3D V7G | Taiwan Semiconductor Corporation |
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PGSMAJ100A F3G | Taiwan Semiconductor Corporation |
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SMA6J26AHR3G | Taiwan Semiconductor Corporation |
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на замовлення 3600 шт: термін постачання 21-31 дні (днів) |
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SMA6J26AHR3G | Taiwan Semiconductor Corporation |
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на замовлення 4785 шт: термін постачання 21-31 дні (днів) |
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S3KB R5G | Taiwan Semiconductor Corporation |
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на замовлення 850 шт: термін постачання 21-31 дні (днів) |
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S3KB R5G | Taiwan Semiconductor Corporation |
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на замовлення 1520 шт: термін постачання 21-31 дні (днів) |
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SMCJ64A R7G | Taiwan Semiconductor Corporation |
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SMBJ110CAHM4G | Taiwan Semiconductor Corporation |
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SMBJ110CA M4G | Taiwan Semiconductor Corporation |
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MTZJ6V8SA R0G | Taiwan Semiconductor Corporation |
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MTZJ6V8SB R0G | Taiwan Semiconductor Corporation |
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MTZJ6V8SC R0G | Taiwan Semiconductor Corporation |
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BZT52B6V8S RRG | Taiwan Semiconductor Corporation |
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TSSA5U60 E3G | Taiwan Semiconductor Corporation |
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на замовлення 1800 шт: термін постачання 21-31 дні (днів) |
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SF2006PT C0G | Taiwan Semiconductor Corporation |
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SRF1040 C0G | Taiwan Semiconductor Corporation |
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SRF1040HC0G | Taiwan Semiconductor Corporation |
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MBRS10150CT MNG | Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 150 V |
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HS5K R7G | Taiwan Semiconductor Corporation |
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HS5K R7G | Taiwan Semiconductor Corporation |
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LSR102 L0G | Taiwan Semiconductor Corporation |
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ES1CL R3G | Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 150 V |
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ES1AL R3G | Taiwan Semiconductor Corporation |
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FR207G A0G | Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - DC Reverse (Vr) (Max): 1000 V |
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FR207G B0G | Taiwan Semiconductor Corporation |
![]() Packaging: Bulk Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - DC Reverse (Vr) (Max): 1000 V |
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P4KE12A R0G | Taiwan Semiconductor Corporation |
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P4KE12AHR0G | Taiwan Semiconductor Corporation |
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SK53B M4G | Taiwan Semiconductor Corporation |
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SK53BHM4G | Taiwan Semiconductor Corporation |
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SK53C V6G | Taiwan Semiconductor Corporation |
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SK53C R7G | Taiwan Semiconductor Corporation |
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SK53C M6G | Taiwan Semiconductor Corporation |
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SK53CHM6G | Taiwan Semiconductor Corporation |
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SK53B R5G | Taiwan Semiconductor Corporation |
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SK53CHR7G | Taiwan Semiconductor Corporation |
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SK53C V7G | Taiwan Semiconductor Corporation |
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MBS6 RCG | Taiwan Semiconductor Corporation |
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MBS6 RCG | Taiwan Semiconductor Corporation |
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MBS6HRCG | Taiwan Semiconductor Corporation |
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SF15G B0G | Taiwan Semiconductor Corporation |
![]() Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 300 V |
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SK29A M2G | Taiwan Semiconductor Corporation |
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BZD27C18PWH | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 18V 1W SOD123W Tolerance: ±6.4% Packaging: Tape & Reel (TR) Package / Case: SOD-123W Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOD-123W Grade: Automotive Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 13 V Qualification: AEC-Q101 |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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BZD27C18PWH | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 18V 1W SOD123W Tolerance: ±6.4% Packaging: Cut Tape (CT) Package / Case: SOD-123W Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOD-123W Grade: Automotive Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 13 V Qualification: AEC-Q101 |
на замовлення 44343 шт: термін постачання 21-31 дні (днів) |
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SMAJ8.5CA M2G | Taiwan Semiconductor Corporation |
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SMAJ8.5CAHM2G | Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Automotive Current - Peak Pulse (10/1000µs): 27.8A Voltage - Reverse Standoff (Typ): 8.5V Supplier Device Package: DO-214AC (SMA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 9.44V Voltage - Clamping (Max) @ Ipp: 14.4V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Active |
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SMAJ8.5CA R3G | Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 27.8A Voltage - Reverse Standoff (Typ): 8.5V Supplier Device Package: DO-214AC (SMA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 9.44V Voltage - Clamping (Max) @ Ipp: 14.4V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Discontinued at Digi-Key |
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PGSMAJ8.5CA M2G | Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: Automotive Current - Peak Pulse (10/1000µs): 27.8A Voltage - Reverse Standoff (Typ): 8.5V Supplier Device Package: DO-214AC (SMA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 9.44V Voltage - Clamping (Max) @ Ipp: 14.4V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Obsolete |
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PGSMAJ8.5CAHM2G | Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: Automotive Current - Peak Pulse (10/1000µs): 27.8A Voltage - Reverse Standoff (Typ): 8.5V Supplier Device Package: DO-214AC (SMA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 9.44V Voltage - Clamping (Max) @ Ipp: 14.4V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Obsolete |
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PGSMAJ75AHF2G | Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 3.3A Voltage - Reverse Standoff (Typ): 75V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 83.3V Voltage - Clamping (Max) @ Ipp: 121V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
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ABS20M REG | Taiwan Semiconductor Corporation |
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на замовлення 7000 шт: термін постачання 21-31 дні (днів) |
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ABS20M REG | Taiwan Semiconductor Corporation |
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на замовлення 7589 шт: термін постачання 21-31 дні (днів) |
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TSM7N65ACI C0G | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 650V 7A ITO220AB Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 1.45Ohm @ 3A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: ITO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 27.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1406 pF @ 25 V |
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1PGSMA4753 M2G | Taiwan Semiconductor Corporation |
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TSS0340L RWG | Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: 1005 (2512 Metric) Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 1.5pF @ 1V, 1MHz Current - Average Rectified (Io): 30mA Supplier Device Package: 1005 Operating Temperature - Junction: -40°C ~ 125°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA Current - Reverse Leakage @ Vr: 1 µA @ 40 V |
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TSS0340U RGG | Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 1.5pF @ 1V, 1MHz Current - Average Rectified (Io): 30mA Supplier Device Package: 0603 Operating Temperature - Junction: -40°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA Current - Reverse Leakage @ Vr: 1 µA @ 40 V |
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S1KLS RVG | Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: SOD-123H Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1.2A Supplier Device Package: SOD-123HE Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
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MTZJ8V2SC R0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 8.24V 500MW DO34
Description: DIODE ZENER 8.24V 500MW DO34
товар відсутній
1PGSMA180Z M2G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 180V 1.25W DO214AC
Description: DIODE ZENER 180V 1.25W DO214AC
товар відсутній
TSPB5H100S S1G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 5A SMPC4.0
Description: DIODE SCHOTTKY 100V 5A SMPC4.0
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)HS3D-K M6G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 53pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 53pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
HS3D V7G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Description: DIODE GEN PURP 200V 3A DO214AB
товар відсутній
PGSMAJ100A F3G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE TVS 400W SMA
Description: DIODE TVS 400W SMA
товар відсутній
SMA6J26AHR3G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 26VWM 40.9VC DO214AC
Description: TVS DIODE 26VWM 40.9VC DO214AC
на замовлення 3600 шт:
термін постачання 21-31 дні (днів)SMA6J26AHR3G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 26VWM 40.9VC DO214AC
Description: TVS DIODE 26VWM 40.9VC DO214AC
на замовлення 4785 шт:
термін постачання 21-31 дні (днів)S3KB R5G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 3A DO214AA
Description: DIODE GEN PURP 800V 3A DO214AA
на замовлення 850 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
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850+ | 26.78 грн |
S3KB R5G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 3A DO214AA
Description: DIODE GEN PURP 800V 3A DO214AA
на замовлення 1520 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
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7+ | 45.62 грн |
10+ | 38.66 грн |
100+ | 29.65 грн |
SMCJ64A R7G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 64VWM 103VC DO214AB
Description: TVS DIODE 64VWM 103VC DO214AB
товар відсутній
SMBJ110CAHM4G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 110V 177V DO214AA
Description: TVS DIODE 110V 177V DO214AA
товар відсутній
SMBJ110CA M4G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 110V 177V DO214AA
Description: TVS DIODE 110V 177V DO214AA
товар відсутній
MTZJ6V8SA R0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.46V 500MW DO34
Description: DIODE ZENER 6.46V 500MW DO34
товар відсутній
MTZJ6V8SB R0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.66V 500MW DO34
Description: DIODE ZENER 6.66V 500MW DO34
товар відсутній
MTZJ6V8SC R0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.84V 500MW DO34
Description: DIODE ZENER 6.84V 500MW DO34
товар відсутній
BZT52B6V8S RRG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.8V 200MW SOD323F
Description: DIODE ZENER 6.8V 200MW SOD323F
товар відсутній
TSSA5U60 E3G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 5A DO214AC
Description: DIODE SCHOTTKY 60V 5A DO214AC
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)SF2006PT C0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 20A TO247AD
Description: DIODE GEN PURP 400V 20A TO247AD
товар відсутній
SRF1040 C0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 40V ITO220AB
Description: DIODE ARRAY SCHOTT 40V ITO220AB
товар відсутній
SRF1040HC0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 40V ITO220AB
Description: DIODE ARRAY SCHOTT 40V ITO220AB
товар відсутній
MBRS10150CT MNG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 150V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Description: DIODE ARR SCHOT 150V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
товар відсутній
HS5K R7G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 5A DO214AB
Description: DIODE GEN PURP 800V 5A DO214AB
товар відсутній
HS5K R7G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 5A DO214AB
Description: DIODE GEN PURP 800V 5A DO214AB
товар відсутній
LSR102 L0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 1A MELF
Description: DIODE SCHOTTKY 20V 1A MELF
товар відсутній
ES1CL R3G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Description: DIODE GEN PURP 150V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
товар відсутній
ES1AL R3G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1A SUB SMA
Description: DIODE GEN PURP 50V 1A SUB SMA
товар відсутній
FR207G A0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - DC Reverse (Vr) (Max): 1000 V
Description: DIODE GEN PURP 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - DC Reverse (Vr) (Max): 1000 V
товар відсутній
FR207G B0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 2A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - DC Reverse (Vr) (Max): 1000 V
Description: DIODE GEN PURP 2A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - DC Reverse (Vr) (Max): 1000 V
товар відсутній
P4KE12A R0G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 10.2V 16.7V DO204AL
Description: TVS DIODE 10.2V 16.7V DO204AL
товар відсутній
P4KE12AHR0G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 10.2V 16.7V DO204AL
Description: TVS DIODE 10.2V 16.7V DO204AL
товар відсутній
SK53B M4G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 5A DO214AA
Description: DIODE SCHOTTKY 30V 5A DO214AA
товар відсутній
SK53BHM4G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 5A DO214AA
Description: DIODE SCHOTTKY 30V 5A DO214AA
товар відсутній
SK53C V6G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 5A 30V DO-214AB
Description: DIODE SCHOTTKY 5A 30V DO-214AB
товар відсутній
SK53C R7G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 5A DO214AB
Description: DIODE SCHOTTKY 30V 5A DO214AB
товар відсутній
SK53C M6G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 5A DO214AB
Description: DIODE SCHOTTKY 30V 5A DO214AB
товар відсутній
SK53CHM6G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 5A DO214AB
Description: DIODE SCHOTTKY 30V 5A DO214AB
товар відсутній
SK53B R5G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 5A DO214AA
Description: DIODE SCHOTTKY 30V 5A DO214AA
товар відсутній
SK53CHR7G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 5A DO214AB
Description: DIODE SCHOTTKY 30V 5A DO214AB
товар відсутній
SK53C V7G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 5A 30V DO-214AB
Description: DIODE SCHOTTKY 5A 30V DO-214AB
товар відсутній
MBS6 RCG |
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Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 600V 800MA MBS
Description: BRIDGE RECT 1P 600V 800MA MBS
товар відсутній
MBS6 RCG |
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Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 600V 800MA MBS
Description: BRIDGE RECT 1P 600V 800MA MBS
товар відсутній
MBS6HRCG |
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Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 600V 500MA MBS
Description: BRIDGE RECT 1P 600V 500MA MBS
товар відсутній
SF15G B0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Description: DIODE GEN PURP 300V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
товар відсутній
SK29A M2G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 2A DO214AC
Description: DIODE SCHOTTKY 90V 2A DO214AC
товар відсутній
BZD27C18PWH |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 18V 1W SOD123W
Tolerance: ±6.4%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123W
Grade: Automotive
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 13 V
Qualification: AEC-Q101
Description: DIODE ZENER 18V 1W SOD123W
Tolerance: ±6.4%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123W
Grade: Automotive
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 13 V
Qualification: AEC-Q101
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10000+ | 6.55 грн |
BZD27C18PWH |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 18V 1W SOD123W
Tolerance: ±6.4%
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123W
Grade: Automotive
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 13 V
Qualification: AEC-Q101
Description: DIODE ZENER 18V 1W SOD123W
Tolerance: ±6.4%
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123W
Grade: Automotive
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 13 V
Qualification: AEC-Q101
на замовлення 44343 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 34.21 грн |
13+ | 23.36 грн |
100+ | 11.8 грн |
500+ | 9.81 грн |
1000+ | 7.64 грн |
2000+ | 6.84 грн |
5000+ | 6.57 грн |
SMAJ8.5CA M2G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 8.5VWM 14.4VC DO214AC
Description: TVS DIODE 8.5VWM 14.4VC DO214AC
товар відсутній
SMAJ8.5CAHM2G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 8.5VWM 14.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 27.8A
Voltage - Reverse Standoff (Typ): 8.5V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 9.44V
Voltage - Clamping (Max) @ Ipp: 14.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 8.5VWM 14.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 27.8A
Voltage - Reverse Standoff (Typ): 8.5V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 9.44V
Voltage - Clamping (Max) @ Ipp: 14.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
товар відсутній
SMAJ8.5CA R3G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 8.5VWM 14.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 27.8A
Voltage - Reverse Standoff (Typ): 8.5V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 9.44V
Voltage - Clamping (Max) @ Ipp: 14.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Description: TVS DIODE 8.5VWM 14.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 27.8A
Voltage - Reverse Standoff (Typ): 8.5V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 9.44V
Voltage - Clamping (Max) @ Ipp: 14.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
товар відсутній
PGSMAJ8.5CA M2G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 8.5VWM 14.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 27.8A
Voltage - Reverse Standoff (Typ): 8.5V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 9.44V
Voltage - Clamping (Max) @ Ipp: 14.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 8.5VWM 14.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 27.8A
Voltage - Reverse Standoff (Typ): 8.5V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 9.44V
Voltage - Clamping (Max) @ Ipp: 14.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
товар відсутній
PGSMAJ8.5CAHM2G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 8.5VWM 14.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 27.8A
Voltage - Reverse Standoff (Typ): 8.5V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 9.44V
Voltage - Clamping (Max) @ Ipp: 14.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 8.5VWM 14.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 27.8A
Voltage - Reverse Standoff (Typ): 8.5V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 9.44V
Voltage - Clamping (Max) @ Ipp: 14.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Obsolete
товар відсутній
PGSMAJ75AHF2G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 75VWM 121VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 3.3A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 75VWM 121VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 3.3A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
ABS20M REG |
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Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 2A ABS
Description: BRIDGE RECT 1PHASE 1KV 2A ABS
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1000+ | 30.95 грн |
2000+ | 27.81 грн |
5000+ | 27.09 грн |
ABS20M REG |
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Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 2A ABS
Description: BRIDGE RECT 1PHASE 1KV 2A ABS
на замовлення 7589 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 67.67 грн |
10+ | 58.57 грн |
100+ | 45.69 грн |
500+ | 35.42 грн |
TSM7N65ACI C0G |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 650V 7A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 3A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1406 pF @ 25 V
Description: MOSFET N-CH 650V 7A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 3A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1406 pF @ 25 V
товар відсутній
1PGSMA4753 M2G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 36V 1.25W DO214AC
Description: DIODE ZENER 36V 1.25W DO214AC
товар відсутній
TSS0340L RWG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 30MA 1005
Packaging: Tape & Reel (TR)
Package / Case: 1005 (2512 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 1.5pF @ 1V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: 1005
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 1 µA @ 40 V
Description: DIODE SCHOTTKY 45V 30MA 1005
Packaging: Tape & Reel (TR)
Package / Case: 1005 (2512 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 1.5pF @ 1V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: 1005
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 1 µA @ 40 V
товар відсутній
TSS0340U RGG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 30MA 0603
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 1.5pF @ 1V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: 0603
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 1 µA @ 40 V
Description: DIODE SCHOTTKY 45V 30MA 0603
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 1.5pF @ 1V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: 0603
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 1 µA @ 40 V
товар відсутній
S1KLS RVG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 800V 1.2A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: DIODE GP 800V 1.2A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній