Продукція > TAIWAN SEMICONDUCTOR CORPORATION > Всі товари виробника TAIWAN SEMICONDUCTOR CORPORATION (23679) > Сторінка 183 з 395

Обрати Сторінку:   [  << Попередня Сторінка ]  1 39 78 117 156 178 179 180 181 182 183 184 185 186 187 188 195 234 273 312 351 390 395  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
без ПДВ
GBPC5002 T0G GBPC5002 T0G Taiwan Semiconductor Corporation GBPC40,%2050%20SERIES_E2103.pdf Description: BRIDGE RECT 1P 200V 50A GBPC40
товар відсутній
GBPC5002M T0G GBPC5002M T0G Taiwan Semiconductor Corporation GBPC40_50%20SERIES_G2211.pdf Description: BRIDGE RECT 1P 200V 50A GBPC40-M
Packaging: Tray
Package / Case: 4-Square, GBPC40-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40-M
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
GBPC5004 T0G GBPC5004 T0G Taiwan Semiconductor Corporation GBPC40,%2050%20SERIES_E2103.pdf Description: BRIDGE RECT 1P 400V 50A GBPC40
товар відсутній
GBPC5004M T0G GBPC5004M T0G Taiwan Semiconductor Corporation GBPC40_50%20SERIES_G2211.pdf Description: BRIDGE RECT 1P 400V 50A GBPC40-M
Packaging: Tray
Package / Case: 4-Square, GBPC40-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40-M
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
BZT52C20S RRG BZT52C20S RRG Taiwan Semiconductor Corporation BZT52C2V4S SERIES_J2212.pdf Description: DIODE ZENER 20V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 14 V
товар відсутній
BZT52C20S RRG BZT52C20S RRG Taiwan Semiconductor Corporation BZT52C2V4S SERIES_J2212.pdf Description: DIODE ZENER 20V 200MW SOD323F
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 14 V
товар відсутній
TSM4435BCS RLG TSM4435BCS RLG Taiwan Semiconductor Corporation Description: MOSFET P-CHANNEL 30V 9.1A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 9.1A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
товар відсутній
TSM4435BCS RLG TSM4435BCS RLG Taiwan Semiconductor Corporation Description: MOSFET P-CHANNEL 30V 9.1A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 9.1A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
товар відсутній
SMAJ7.0CAHR3G SMAJ7.0CAHR3G Taiwan Semiconductor Corporation SMAJ%20SERIES_U2102.pdf Description: TVS DIODE 7VWM 12VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 33.3A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 400W
Power Line Protection: No
на замовлення 49 шт:
термін постачання 21-31 дні (днів)
10+32.69 грн
12+ 25.41 грн
Мінімальне замовлення: 10
TSM1N45DCS RLG TSM1N45DCS RLG Taiwan Semiconductor Corporation TSM1N45DCS-RLG.pdf Description: MOSFET N-CH 450V 500MA 8SOP
товар відсутній
TSM1N45DCS RLG TSM1N45DCS RLG Taiwan Semiconductor Corporation TSM1N45DCS-RLG.pdf Description: MOSFET N-CH 450V 500MA 8SOP
товар відсутній
TSZU52C5V6 RGG TSZU52C5V6 RGG Taiwan Semiconductor Corporation TSZU52C2V0 SERIES_G2009.pdf Description: DIODE ZENER 5.6V 150MW 0603
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: 0603
Power - Max: 150 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
товар відсутній
SMDJ48A M6G SMDJ48A M6G Taiwan Semiconductor Corporation SMDJ%20SERIES_E1708.pdf Description: TVS DIODE 48VWM 77.4VC DO214AB
товар відсутній
SMDJ48AHM6G SMDJ48AHM6G Taiwan Semiconductor Corporation SMDJ%20SERIES_E1708.pdf Description: TVS DIODE 48VWM 77.4VC DO214AB
товар відсутній
SMDJ48A R7G SMDJ48A R7G Taiwan Semiconductor Corporation SMDJ%20SERIES_E1708.pdf Description: TVS DIODE 48VWM 77.4VC DO214AB
товар відсутній
SMDJ48AHR7G SMDJ48AHR7G Taiwan Semiconductor Corporation SMDJ%20SERIES_E1708.pdf Description: TVS DIODE 48VWM 77.4VC DO214AB
товар відсутній
5.0SMDJ48AHM6G 5.0SMDJ48AHM6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_B1708.pdf Description: TVS DIODE 48VWM 77.4VC DO214AB
товар відсутній
5.0SMDJ48A M6G 5.0SMDJ48A M6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_B1708.pdf Description: TVS DIODE 48VWM 77.4VC DO214AB
товар відсутній
BZX585B20 RSG BZX585B20 RSG Taiwan Semiconductor Corporation BZX585B2V4%20SERIES_C1607.pdf Description: DIODE ZENER 20V 200MW SOD523F
товар відсутній
BZX585B24 RSG BZX585B24 RSG Taiwan Semiconductor Corporation BZX585B2V4%20SERIES_C1607.pdf Description: DIODE ZENER 24V 200MW SOD523F
товар відсутній
BZX585B27 RSG BZX585B27 RSG Taiwan Semiconductor Corporation BZX585B2V4%20SERIES_C1607.pdf Description: DIODE ZENER 27V 200MW SOD523F
товар відсутній
BZX585B2V4 RSG BZX585B2V4 RSG Taiwan Semiconductor Corporation BZX585B2V4%20SERIES_C1607.pdf Description: DIODE ZENER 2.4V 200MW SOD523F
товар відсутній
BZX585B2V7 RSG BZX585B2V7 RSG Taiwan Semiconductor Corporation BZX585B2V4%20SERIES_C1607.pdf Description: DIODE ZENER 2.7V 200MW SOD523F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-523F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 18 µA @ 1 V
товар відсутній
BZX585B30 RSG BZX585B30 RSG Taiwan Semiconductor Corporation BZX585B2V4%20SERIES_C1607.pdf Description: DIODE ZENER 30V 200MW SOD523F
товар відсутній
BZX585B33 RSG BZX585B33 RSG Taiwan Semiconductor Corporation BZX585B2V4%20SERIES_C1607.pdf Description: DIODE ZENER 33V 200MW SOD523F
товар відсутній
BZX585B36 RSG BZX585B36 RSG Taiwan Semiconductor Corporation BZX585B2V4%20SERIES_C1607.pdf Description: DIODE ZENER 36V 200MW SOD523F
товар відсутній
BZX585B3V0 RSG BZX585B3V0 RSG Taiwan Semiconductor Corporation BZX585B2V4%20SERIES_C1607.pdf Description: DIODE ZENER 3V 200MW SOD523F
товар відсутній
BZX585B3V3 RSG BZX585B3V3 RSG Taiwan Semiconductor Corporation BZX585B2V4%20SERIES_C1607.pdf Description: DIODE ZENER 3.3V 200MW SOD523F
товар відсутній
BZX585B3V6 RSG BZX585B3V6 RSG Taiwan Semiconductor Corporation BZX585B2V4%20SERIES_C1607.pdf Description: DIODE ZENER 3.6V 200MW SOD523F
товар відсутній
BZX585B3V9 RSG BZX585B3V9 RSG Taiwan Semiconductor Corporation BZX585B2V4%20SERIES_C1607.pdf Description: DIODE ZENER 3.9V 200MW SOD523F
товар відсутній
BZX585B43 RSG BZX585B43 RSG Taiwan Semiconductor Corporation BZX585B2V4%20SERIES_C1607.pdf Description: DIODE ZENER 43V 200MW SOD523F
товар відсутній
BZX585B47 RSG BZX585B47 RSG Taiwan Semiconductor Corporation BZX585B2V4%20SERIES_C1607.pdf Description: DIODE ZENER 47V 200MW SOD523F
товар відсутній
BZX585B4V7 RSG BZX585B4V7 RSG Taiwan Semiconductor Corporation BZX585B2V4 SERIES_C1607.pdf Description: DIODE ZENER 4.7V 200MW SOD523F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-523F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 2.7 µA @ 2 V
товар відсутній
BZX585B51 RSG BZX585B51 RSG Taiwan Semiconductor Corporation BZX585B2V4%20SERIES_C1607.pdf Description: DIODE ZENER 51V 200MW SOD523F
товар відсутній
BZX585B5V1 RSG BZX585B5V1 RSG Taiwan Semiconductor Corporation BZX585B2V4%20SERIES_C1607.pdf Description: DIODE ZENER 5.1V 200MW SOD523F
товар відсутній
BZX585B5V6 RSG BZX585B5V6 RSG Taiwan Semiconductor Corporation BZX585B2V4%20SERIES_C1607.pdf Description: DIODE ZENER 5.6V 200MW SOD523F
товар відсутній
BZW04-10B R0G BZW04-10B R0G Taiwan Semiconductor Corporation BZW04%20SERIES_I15.pdf Description: TVS DIODE 10.2VWM 16.7VC DO204AL
товар відсутній
BZW04-37B R0G BZW04-37B R0G Taiwan Semiconductor Corporation BZW04%20SERIES_I15.pdf Description: TVS DIODE 36.8VWM 59.3VC DO204AL
товар відсутній
BZW04-44B R0G BZW04-44B R0G Taiwan Semiconductor Corporation BZW04%20SERIES_I15.pdf Description: TVS DIODE 43.6VWM 70.1VC DO204AL
товар відсутній
BZW04-48B R0G BZW04-48B R0G Taiwan Semiconductor Corporation BZW04%20SERIES_I15.pdf Description: TVS DIODE 47.8VWM 77VC DO204AL
товар відсутній
BZW04-53B R0G BZW04-53B R0G Taiwan Semiconductor Corporation BZW04%20SERIES_I15.pdf Description: TVS DIODE 53VWM 85VC DO204AL
товар відсутній
BZW04-58B R0G BZW04-58B R0G Taiwan Semiconductor Corporation BZW04%20SERIES_I15.pdf Description: TVS DIODE 58.1VWM 92VC DO204AL
товар відсутній
BZW04-48 R0G BZW04-48 R0G Taiwan Semiconductor Corporation BZW04%20SERIES_I15.pdf Description: TVS DIODE 47.8VWM 77VC DO204AL
товар відсутній
BZW04-53 R0G BZW04-53 R0G Taiwan Semiconductor Corporation BZW04%20SERIES_I15.pdf Description: TVS DIODE 53VWM 85VC DO204AL
товар відсутній
BZW04-58 R0G BZW04-58 R0G Taiwan Semiconductor Corporation BZW04%20SERIES_I15.pdf Description: TVS DIODE 58.1VWM 92VC DO204AL
товар відсутній
PU2DMH M3G PU2DMH M3G Taiwan Semiconductor Corporation PU2BMH%20SERIES_C2103.pdf Description: DIODE GEN PURP 200V 2A MICRO SMA
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 36 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
товар відсутній
PU2DMH M3G PU2DMH M3G Taiwan Semiconductor Corporation PU2BMH%20SERIES_C2103.pdf Description: DIODE GEN PURP 200V 2A MICRO SMA
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 36 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 5648 шт:
термін постачання 21-31 дні (днів)
9+36.49 грн
10+ 30.02 грн
100+ 22.4 грн
500+ 16.51 грн
1000+ 12.76 грн
Мінімальне замовлення: 9
TSM080NB03CR RLG TSM080NB03CR RLG Taiwan Semiconductor Corporation TSM080NB03CR_A1910.pdf Description: MOSFET N-CH 30V 14A/59A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 10V
Power Dissipation (Max): 3.1W (Ta), 55.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1097 pF @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+19.38 грн
5000+ 17.68 грн
Мінімальне замовлення: 2500
TSM080NB03CR RLG TSM080NB03CR RLG Taiwan Semiconductor Corporation TSM080NB03CR_A1910.pdf Description: MOSFET N-CH 30V 14A/59A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 10V
Power Dissipation (Max): 3.1W (Ta), 55.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1097 pF @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
6+50.94 грн
10+ 42.61 грн
100+ 29.46 грн
500+ 23.1 грн
1000+ 19.66 грн
Мінімальне замовлення: 6
TSM250NB06LDCR RLG TSM250NB06LDCR RLG Taiwan Semiconductor Corporation TSM250NB06LDCR_A2001.pdf Description: MOSFET 2N-CH 60V 6A/29A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 29A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 30V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+31.64 грн
Мінімальне замовлення: 2500
TSM250NB06LDCR RLG TSM250NB06LDCR RLG Taiwan Semiconductor Corporation TSM250NB06LDCR_A2001.pdf Description: MOSFET 2N-CH 60V 6A/29A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 29A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 30V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
на замовлення 4774 шт:
термін постачання 21-31 дні (днів)
4+84.39 грн
10+ 66.48 грн
100+ 51.7 грн
500+ 41.12 грн
1000+ 33.5 грн
Мінімальне замовлення: 4
TS79M05CP ROG TS79M05CP ROG Taiwan Semiconductor Corporation Description: IC REG LINEAR -5V 500MA TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: 0°C ~ 125°C (TJ)
Output Configuration: Negative
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): -35V
Number of Regulators: 1
Supplier Device Package: TO-252 (DPAK)
Voltage - Output (Min/Fixed): -5V
Control Features: Current Limit
Part Status: Obsolete
PSRR: 66dB (120Hz)
Voltage Dropout (Max): 2V @ 500mA (Typ)
Protection Features: Over Temperature
товар відсутній
SK55C R7G SK55C R7G Taiwan Semiconductor Corporation SK52C%20SERIES_S2311.pdf Description: DIODE SCHOTTKY 50V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
товар відсутній
SK55C M6G SK55C M6G Taiwan Semiconductor Corporation SK52C%20SERIES_S2311.pdf Description: DIODE SCHOTTKY 50V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
товар відсутній
SK55CHM6G SK55CHM6G Taiwan Semiconductor Corporation SK52CH%20SERIES_C2311.pdf Description: DIODE SCHOTTKY 50V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Qualification: AEC-Q101
товар відсутній
SK55CHR7G SK55CHR7G Taiwan Semiconductor Corporation SK52CH%20SERIES_C2311.pdf Description: DIODE SCHOTTKY 50V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Qualification: AEC-Q101
товар відсутній
SK55C V6G SK55C V6G Taiwan Semiconductor Corporation SK52C%20SERIES_S2311.pdf Description: DIODE SCHOTTKY 50V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
товар відсутній
SK55C V7G SK55C V7G Taiwan Semiconductor Corporation SK52C%20SERIES_S2311.pdf Description: DIODE SCHOTTKY 50V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
товар відсутній
1SMB5954 M4G 1SMB5954 M4G Taiwan Semiconductor Corporation 1SMB5926%20SERIES_K1701.pdf Description: DIODE ZENER 160V 3W DO214AA
товар відсутній
1SMB5954HM4G 1SMB5954HM4G Taiwan Semiconductor Corporation 1SMB5926%20SERIES_K1701.pdf Description: DIODE ZENER 160V 3W DO214AA
товар відсутній
GBPC5002 T0G GBPC40,%2050%20SERIES_E2103.pdf
GBPC5002 T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 200V 50A GBPC40
товар відсутній
GBPC5002M T0G GBPC40_50%20SERIES_G2211.pdf
GBPC5002M T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 200V 50A GBPC40-M
Packaging: Tray
Package / Case: 4-Square, GBPC40-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40-M
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
GBPC5004 T0G GBPC40,%2050%20SERIES_E2103.pdf
GBPC5004 T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 400V 50A GBPC40
товар відсутній
GBPC5004M T0G GBPC40_50%20SERIES_G2211.pdf
GBPC5004M T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 400V 50A GBPC40-M
Packaging: Tray
Package / Case: 4-Square, GBPC40-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40-M
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
BZT52C20S RRG BZT52C2V4S SERIES_J2212.pdf
BZT52C20S RRG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 20V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 14 V
товар відсутній
BZT52C20S RRG BZT52C2V4S SERIES_J2212.pdf
BZT52C20S RRG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 20V 200MW SOD323F
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 14 V
товар відсутній
TSM4435BCS RLG
TSM4435BCS RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 30V 9.1A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 9.1A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
товар відсутній
TSM4435BCS RLG
TSM4435BCS RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 30V 9.1A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 9.1A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
товар відсутній
SMAJ7.0CAHR3G SMAJ%20SERIES_U2102.pdf
SMAJ7.0CAHR3G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 7VWM 12VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 33.3A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 400W
Power Line Protection: No
на замовлення 49 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+32.69 грн
12+ 25.41 грн
Мінімальне замовлення: 10
TSM1N45DCS RLG TSM1N45DCS-RLG.pdf
TSM1N45DCS RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 450V 500MA 8SOP
товар відсутній
TSM1N45DCS RLG TSM1N45DCS-RLG.pdf
TSM1N45DCS RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 450V 500MA 8SOP
товар відсутній
TSZU52C5V6 RGG TSZU52C2V0 SERIES_G2009.pdf
TSZU52C5V6 RGG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.6V 150MW 0603
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: 0603
Power - Max: 150 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
товар відсутній
SMDJ48A M6G SMDJ%20SERIES_E1708.pdf
SMDJ48A M6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 48VWM 77.4VC DO214AB
товар відсутній
SMDJ48AHM6G SMDJ%20SERIES_E1708.pdf
SMDJ48AHM6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 48VWM 77.4VC DO214AB
товар відсутній
SMDJ48A R7G SMDJ%20SERIES_E1708.pdf
SMDJ48A R7G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 48VWM 77.4VC DO214AB
товар відсутній
SMDJ48AHR7G SMDJ%20SERIES_E1708.pdf
SMDJ48AHR7G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 48VWM 77.4VC DO214AB
товар відсутній
5.0SMDJ48AHM6G 5.0SMDJ%20SERIES_B1708.pdf
5.0SMDJ48AHM6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 48VWM 77.4VC DO214AB
товар відсутній
5.0SMDJ48A M6G 5.0SMDJ%20SERIES_B1708.pdf
5.0SMDJ48A M6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 48VWM 77.4VC DO214AB
товар відсутній
BZX585B20 RSG BZX585B2V4%20SERIES_C1607.pdf
BZX585B20 RSG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 20V 200MW SOD523F
товар відсутній
BZX585B24 RSG BZX585B2V4%20SERIES_C1607.pdf
BZX585B24 RSG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 24V 200MW SOD523F
товар відсутній
BZX585B27 RSG BZX585B2V4%20SERIES_C1607.pdf
BZX585B27 RSG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 27V 200MW SOD523F
товар відсутній
BZX585B2V4 RSG BZX585B2V4%20SERIES_C1607.pdf
BZX585B2V4 RSG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 2.4V 200MW SOD523F
товар відсутній
BZX585B2V7 RSG BZX585B2V4%20SERIES_C1607.pdf
BZX585B2V7 RSG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 2.7V 200MW SOD523F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-523F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 18 µA @ 1 V
товар відсутній
BZX585B30 RSG BZX585B2V4%20SERIES_C1607.pdf
BZX585B30 RSG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 30V 200MW SOD523F
товар відсутній
BZX585B33 RSG BZX585B2V4%20SERIES_C1607.pdf
BZX585B33 RSG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 33V 200MW SOD523F
товар відсутній
BZX585B36 RSG BZX585B2V4%20SERIES_C1607.pdf
BZX585B36 RSG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 36V 200MW SOD523F
товар відсутній
BZX585B3V0 RSG BZX585B2V4%20SERIES_C1607.pdf
BZX585B3V0 RSG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3V 200MW SOD523F
товар відсутній
BZX585B3V3 RSG BZX585B2V4%20SERIES_C1607.pdf
BZX585B3V3 RSG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.3V 200MW SOD523F
товар відсутній
BZX585B3V6 RSG BZX585B2V4%20SERIES_C1607.pdf
BZX585B3V6 RSG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.6V 200MW SOD523F
товар відсутній
BZX585B3V9 RSG BZX585B2V4%20SERIES_C1607.pdf
BZX585B3V9 RSG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.9V 200MW SOD523F
товар відсутній
BZX585B43 RSG BZX585B2V4%20SERIES_C1607.pdf
BZX585B43 RSG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 43V 200MW SOD523F
товар відсутній
BZX585B47 RSG BZX585B2V4%20SERIES_C1607.pdf
BZX585B47 RSG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 47V 200MW SOD523F
товар відсутній
BZX585B4V7 RSG BZX585B2V4 SERIES_C1607.pdf
BZX585B4V7 RSG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.7V 200MW SOD523F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-523F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 2.7 µA @ 2 V
товар відсутній
BZX585B51 RSG BZX585B2V4%20SERIES_C1607.pdf
BZX585B51 RSG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 51V 200MW SOD523F
товар відсутній
BZX585B5V1 RSG BZX585B2V4%20SERIES_C1607.pdf
BZX585B5V1 RSG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.1V 200MW SOD523F
товар відсутній
BZX585B5V6 RSG BZX585B2V4%20SERIES_C1607.pdf
BZX585B5V6 RSG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.6V 200MW SOD523F
товар відсутній
BZW04-10B R0G BZW04%20SERIES_I15.pdf
BZW04-10B R0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 10.2VWM 16.7VC DO204AL
товар відсутній
BZW04-37B R0G BZW04%20SERIES_I15.pdf
BZW04-37B R0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 36.8VWM 59.3VC DO204AL
товар відсутній
BZW04-44B R0G BZW04%20SERIES_I15.pdf
BZW04-44B R0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 43.6VWM 70.1VC DO204AL
товар відсутній
BZW04-48B R0G BZW04%20SERIES_I15.pdf
BZW04-48B R0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 47.8VWM 77VC DO204AL
товар відсутній
BZW04-53B R0G BZW04%20SERIES_I15.pdf
BZW04-53B R0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 53VWM 85VC DO204AL
товар відсутній
BZW04-58B R0G BZW04%20SERIES_I15.pdf
BZW04-58B R0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 58.1VWM 92VC DO204AL
товар відсутній
BZW04-48 R0G BZW04%20SERIES_I15.pdf
BZW04-48 R0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 47.8VWM 77VC DO204AL
товар відсутній
BZW04-53 R0G BZW04%20SERIES_I15.pdf
BZW04-53 R0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 53VWM 85VC DO204AL
товар відсутній
BZW04-58 R0G BZW04%20SERIES_I15.pdf
BZW04-58 R0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 58.1VWM 92VC DO204AL
товар відсутній
PU2DMH M3G PU2BMH%20SERIES_C2103.pdf
PU2DMH M3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A MICRO SMA
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 36 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
товар відсутній
PU2DMH M3G PU2BMH%20SERIES_C2103.pdf
PU2DMH M3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A MICRO SMA
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 36 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 5648 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
9+36.49 грн
10+ 30.02 грн
100+ 22.4 грн
500+ 16.51 грн
1000+ 12.76 грн
Мінімальне замовлення: 9
TSM080NB03CR RLG TSM080NB03CR_A1910.pdf
TSM080NB03CR RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 14A/59A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 10V
Power Dissipation (Max): 3.1W (Ta), 55.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1097 pF @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+19.38 грн
5000+ 17.68 грн
Мінімальне замовлення: 2500
TSM080NB03CR RLG TSM080NB03CR_A1910.pdf
TSM080NB03CR RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 14A/59A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 10V
Power Dissipation (Max): 3.1W (Ta), 55.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1097 pF @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6+50.94 грн
10+ 42.61 грн
100+ 29.46 грн
500+ 23.1 грн
1000+ 19.66 грн
Мінімальне замовлення: 6
TSM250NB06LDCR RLG TSM250NB06LDCR_A2001.pdf
TSM250NB06LDCR RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 60V 6A/29A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 29A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 30V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+31.64 грн
Мінімальне замовлення: 2500
TSM250NB06LDCR RLG TSM250NB06LDCR_A2001.pdf
TSM250NB06LDCR RLG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 60V 6A/29A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 29A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 30V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
на замовлення 4774 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+84.39 грн
10+ 66.48 грн
100+ 51.7 грн
500+ 41.12 грн
1000+ 33.5 грн
Мінімальне замовлення: 4
TS79M05CP ROG
TS79M05CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: IC REG LINEAR -5V 500MA TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: 0°C ~ 125°C (TJ)
Output Configuration: Negative
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): -35V
Number of Regulators: 1
Supplier Device Package: TO-252 (DPAK)
Voltage - Output (Min/Fixed): -5V
Control Features: Current Limit
Part Status: Obsolete
PSRR: 66dB (120Hz)
Voltage Dropout (Max): 2V @ 500mA (Typ)
Protection Features: Over Temperature
товар відсутній
SK55C R7G SK52C%20SERIES_S2311.pdf
SK55C R7G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
товар відсутній
SK55C M6G SK52C%20SERIES_S2311.pdf
SK55C M6G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
товар відсутній
SK55CHM6G SK52CH%20SERIES_C2311.pdf
SK55CHM6G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Qualification: AEC-Q101
товар відсутній
SK55CHR7G SK52CH%20SERIES_C2311.pdf
SK55CHR7G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Qualification: AEC-Q101
товар відсутній
SK55C V6G SK52C%20SERIES_S2311.pdf
SK55C V6G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
товар відсутній
SK55C V7G SK52C%20SERIES_S2311.pdf
SK55C V7G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
товар відсутній
1SMB5954 M4G 1SMB5926%20SERIES_K1701.pdf
1SMB5954 M4G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 160V 3W DO214AA
товар відсутній
1SMB5954HM4G 1SMB5926%20SERIES_K1701.pdf
1SMB5954HM4G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 160V 3W DO214AA
товар відсутній
Обрати Сторінку:   [  << Попередня Сторінка ]  1 39 78 117 156 178 179 180 181 182 183 184 185 186 187 188 195 234 273 312 351 390 395  [ Наступна Сторінка >> ]