Продукція > TAIWAN SEMICONDUCTOR CORPORATION > Всі товари виробника TAIWAN SEMICONDUCTOR CORPORATION (23679) > Сторінка 183 з 395
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GBPC5002 T0G | Taiwan Semiconductor Corporation |
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GBPC5002M T0G | Taiwan Semiconductor Corporation |
![]() Packaging: Tray Package / Case: 4-Square, GBPC40-M Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC40-M Part Status: Active Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 50 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
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GBPC5004 T0G | Taiwan Semiconductor Corporation |
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GBPC5004M T0G | Taiwan Semiconductor Corporation |
![]() Packaging: Tray Package / Case: 4-Square, GBPC40-M Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC40-M Part Status: Active Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 50 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
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BZT52C20S RRG | Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 20 V Impedance (Max) (Zzt): 55 Ohms Supplier Device Package: SOD-323F Part Status: Active Power - Max: 200 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 45 nA @ 14 V |
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BZT52C20S RRG | Taiwan Semiconductor Corporation |
![]() Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 20 V Impedance (Max) (Zzt): 55 Ohms Supplier Device Package: SOD-323F Part Status: Active Power - Max: 200 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 45 nA @ 14 V |
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TSM4435BCS RLG | Taiwan Semiconductor Corporation |
Description: MOSFET P-CHANNEL 30V 9.1A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta) Rds On (Max) @ Id, Vgs: 21mOhm @ 9.1A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V |
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TSM4435BCS RLG | Taiwan Semiconductor Corporation |
Description: MOSFET P-CHANNEL 30V 9.1A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta) Rds On (Max) @ Id, Vgs: 21mOhm @ 9.1A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V |
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SMAJ7.0CAHR3G | Taiwan Semiconductor Corporation |
![]() Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Automotive Current - Peak Pulse (10/1000µs): 33.3A Voltage - Reverse Standoff (Typ): 7V Supplier Device Package: DO-214AC (SMA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 7.78V Voltage - Clamping (Max) @ Ipp: 12V Power - Peak Pulse: 400W Power Line Protection: No |
на замовлення 49 шт: термін постачання 21-31 дні (днів) |
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TSM1N45DCS RLG | Taiwan Semiconductor Corporation |
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TSM1N45DCS RLG | Taiwan Semiconductor Corporation |
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TSZU52C5V6 RGG | Taiwan Semiconductor Corporation |
![]() Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: 0603 (1608 Metric) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TJ) Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: 0603 Power - Max: 150 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 1 V |
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SMDJ48A M6G | Taiwan Semiconductor Corporation |
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SMDJ48AHM6G | Taiwan Semiconductor Corporation |
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SMDJ48A R7G | Taiwan Semiconductor Corporation |
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SMDJ48AHR7G | Taiwan Semiconductor Corporation |
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5.0SMDJ48AHM6G | Taiwan Semiconductor Corporation |
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5.0SMDJ48A M6G | Taiwan Semiconductor Corporation |
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BZX585B20 RSG | Taiwan Semiconductor Corporation |
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BZX585B24 RSG | Taiwan Semiconductor Corporation |
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BZX585B27 RSG | Taiwan Semiconductor Corporation |
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BZX585B2V4 RSG | Taiwan Semiconductor Corporation |
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BZX585B2V7 RSG | Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 2.7 V Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: SOD-523F Part Status: Active Power - Max: 200 mW Current - Reverse Leakage @ Vr: 18 µA @ 1 V |
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BZX585B30 RSG | Taiwan Semiconductor Corporation |
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BZX585B33 RSG | Taiwan Semiconductor Corporation |
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BZX585B36 RSG | Taiwan Semiconductor Corporation |
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BZX585B3V0 RSG | Taiwan Semiconductor Corporation |
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BZX585B3V3 RSG | Taiwan Semiconductor Corporation |
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BZX585B3V6 RSG | Taiwan Semiconductor Corporation |
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BZX585B3V9 RSG | Taiwan Semiconductor Corporation |
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BZX585B43 RSG | Taiwan Semiconductor Corporation |
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BZX585B47 RSG | Taiwan Semiconductor Corporation |
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BZX585B4V7 RSG | Taiwan Semiconductor Corporation |
![]() Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 4.7 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: SOD-523F Power - Max: 200 mW Current - Reverse Leakage @ Vr: 2.7 µA @ 2 V |
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BZX585B51 RSG | Taiwan Semiconductor Corporation |
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BZX585B5V1 RSG | Taiwan Semiconductor Corporation |
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BZX585B5V6 RSG | Taiwan Semiconductor Corporation |
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BZW04-10B R0G | Taiwan Semiconductor Corporation |
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BZW04-37B R0G | Taiwan Semiconductor Corporation |
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BZW04-44B R0G | Taiwan Semiconductor Corporation |
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BZW04-48B R0G | Taiwan Semiconductor Corporation |
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BZW04-53B R0G | Taiwan Semiconductor Corporation |
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BZW04-58B R0G | Taiwan Semiconductor Corporation |
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BZW04-48 R0G | Taiwan Semiconductor Corporation |
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BZW04-53 R0G | Taiwan Semiconductor Corporation |
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BZW04-58 R0G | Taiwan Semiconductor Corporation |
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PU2DMH M3G | Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 36 ns Technology: Standard Capacitance @ Vr, F: 18pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: Micro SMA Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
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PU2DMH M3G | Taiwan Semiconductor Corporation |
![]() Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 36 ns Technology: Standard Capacitance @ Vr, F: 18pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: Micro SMA Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
на замовлення 5648 шт: термін постачання 21-31 дні (днів) |
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TSM080NB03CR RLG | Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 59A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 10V Power Dissipation (Max): 3.1W (Ta), 55.6W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1097 pF @ 15 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TSM080NB03CR RLG | Taiwan Semiconductor Corporation |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 59A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 10V Power Dissipation (Max): 3.1W (Ta), 55.6W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1097 pF @ 15 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TSM250NB06LDCR RLG | Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta), 48W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 29A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 30V Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) Part Status: Active |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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TSM250NB06LDCR RLG | Taiwan Semiconductor Corporation |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta), 48W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 29A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 30V Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) Part Status: Active |
на замовлення 4774 шт: термін постачання 21-31 дні (днів) |
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TS79M05CP ROG | Taiwan Semiconductor Corporation |
Description: IC REG LINEAR -5V 500MA TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: 0°C ~ 125°C (TJ) Output Configuration: Negative Current - Quiescent (Iq): 8 mA Voltage - Input (Max): -35V Number of Regulators: 1 Supplier Device Package: TO-252 (DPAK) Voltage - Output (Min/Fixed): -5V Control Features: Current Limit Part Status: Obsolete PSRR: 66dB (120Hz) Voltage Dropout (Max): 2V @ 500mA (Typ) Protection Features: Over Temperature |
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SK55C R7G | Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A Current - Reverse Leakage @ Vr: 500 µA @ 50 V |
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SK55C M6G | Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A Current - Reverse Leakage @ Vr: 500 µA @ 50 V |
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SK55CHM6G | Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A Current - Reverse Leakage @ Vr: 500 µA @ 50 V Qualification: AEC-Q101 |
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SK55CHR7G | Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A Current - Reverse Leakage @ Vr: 500 µA @ 50 V Qualification: AEC-Q101 |
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SK55C V6G | Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A Current - Reverse Leakage @ Vr: 500 µA @ 50 V |
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SK55C V7G | Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A Current - Reverse Leakage @ Vr: 500 µA @ 50 V |
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1SMB5954 M4G | Taiwan Semiconductor Corporation |
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1SMB5954HM4G | Taiwan Semiconductor Corporation |
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GBPC5002 T0G |
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Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 200V 50A GBPC40
Description: BRIDGE RECT 1P 200V 50A GBPC40
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GBPC5002M T0G |
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Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 200V 50A GBPC40-M
Packaging: Tray
Package / Case: 4-Square, GBPC40-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40-M
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: BRIDGE RECT 1P 200V 50A GBPC40-M
Packaging: Tray
Package / Case: 4-Square, GBPC40-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40-M
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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GBPC5004 T0G |
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Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 400V 50A GBPC40
Description: BRIDGE RECT 1P 400V 50A GBPC40
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GBPC5004M T0G |
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Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 400V 50A GBPC40-M
Packaging: Tray
Package / Case: 4-Square, GBPC40-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40-M
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: BRIDGE RECT 1P 400V 50A GBPC40-M
Packaging: Tray
Package / Case: 4-Square, GBPC40-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40-M
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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BZT52C20S RRG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 20V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 14 V
Description: DIODE ZENER 20V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 14 V
товар відсутній
BZT52C20S RRG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 20V 200MW SOD323F
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 14 V
Description: DIODE ZENER 20V 200MW SOD323F
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 14 V
товар відсутній
TSM4435BCS RLG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 30V 9.1A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 9.1A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
Description: MOSFET P-CHANNEL 30V 9.1A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 9.1A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
товар відсутній
TSM4435BCS RLG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 30V 9.1A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 9.1A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
Description: MOSFET P-CHANNEL 30V 9.1A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 9.1A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
товар відсутній
SMAJ7.0CAHR3G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 7VWM 12VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 33.3A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 400W
Power Line Protection: No
Description: TVS DIODE 7VWM 12VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 33.3A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 400W
Power Line Protection: No
на замовлення 49 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 32.69 грн |
12+ | 25.41 грн |
TSM1N45DCS RLG |
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Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 450V 500MA 8SOP
Description: MOSFET N-CH 450V 500MA 8SOP
товар відсутній
TSM1N45DCS RLG |
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Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 450V 500MA 8SOP
Description: MOSFET N-CH 450V 500MA 8SOP
товар відсутній
TSZU52C5V6 RGG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.6V 150MW 0603
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: 0603
Power - Max: 150 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Description: DIODE ZENER 5.6V 150MW 0603
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: 0603
Power - Max: 150 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
товар відсутній
SMDJ48A M6G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 48VWM 77.4VC DO214AB
Description: TVS DIODE 48VWM 77.4VC DO214AB
товар відсутній
SMDJ48AHM6G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 48VWM 77.4VC DO214AB
Description: TVS DIODE 48VWM 77.4VC DO214AB
товар відсутній
SMDJ48A R7G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 48VWM 77.4VC DO214AB
Description: TVS DIODE 48VWM 77.4VC DO214AB
товар відсутній
SMDJ48AHR7G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 48VWM 77.4VC DO214AB
Description: TVS DIODE 48VWM 77.4VC DO214AB
товар відсутній
5.0SMDJ48AHM6G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 48VWM 77.4VC DO214AB
Description: TVS DIODE 48VWM 77.4VC DO214AB
товар відсутній
5.0SMDJ48A M6G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 48VWM 77.4VC DO214AB
Description: TVS DIODE 48VWM 77.4VC DO214AB
товар відсутній
BZX585B20 RSG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 20V 200MW SOD523F
Description: DIODE ZENER 20V 200MW SOD523F
товар відсутній
BZX585B24 RSG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 24V 200MW SOD523F
Description: DIODE ZENER 24V 200MW SOD523F
товар відсутній
BZX585B27 RSG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 27V 200MW SOD523F
Description: DIODE ZENER 27V 200MW SOD523F
товар відсутній
BZX585B2V4 RSG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 2.4V 200MW SOD523F
Description: DIODE ZENER 2.4V 200MW SOD523F
товар відсутній
BZX585B2V7 RSG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 2.7V 200MW SOD523F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-523F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 18 µA @ 1 V
Description: DIODE ZENER 2.7V 200MW SOD523F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-523F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 18 µA @ 1 V
товар відсутній
BZX585B30 RSG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 30V 200MW SOD523F
Description: DIODE ZENER 30V 200MW SOD523F
товар відсутній
BZX585B33 RSG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 33V 200MW SOD523F
Description: DIODE ZENER 33V 200MW SOD523F
товар відсутній
BZX585B36 RSG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 36V 200MW SOD523F
Description: DIODE ZENER 36V 200MW SOD523F
товар відсутній
BZX585B3V0 RSG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3V 200MW SOD523F
Description: DIODE ZENER 3V 200MW SOD523F
товар відсутній
BZX585B3V3 RSG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.3V 200MW SOD523F
Description: DIODE ZENER 3.3V 200MW SOD523F
товар відсутній
BZX585B3V6 RSG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.6V 200MW SOD523F
Description: DIODE ZENER 3.6V 200MW SOD523F
товар відсутній
BZX585B3V9 RSG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.9V 200MW SOD523F
Description: DIODE ZENER 3.9V 200MW SOD523F
товар відсутній
BZX585B43 RSG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 43V 200MW SOD523F
Description: DIODE ZENER 43V 200MW SOD523F
товар відсутній
BZX585B47 RSG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 47V 200MW SOD523F
Description: DIODE ZENER 47V 200MW SOD523F
товар відсутній
BZX585B4V7 RSG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.7V 200MW SOD523F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-523F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 2.7 µA @ 2 V
Description: DIODE ZENER 4.7V 200MW SOD523F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-523F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 2.7 µA @ 2 V
товар відсутній
BZX585B51 RSG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 51V 200MW SOD523F
Description: DIODE ZENER 51V 200MW SOD523F
товар відсутній
BZX585B5V1 RSG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.1V 200MW SOD523F
Description: DIODE ZENER 5.1V 200MW SOD523F
товар відсутній
BZX585B5V6 RSG |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.6V 200MW SOD523F
Description: DIODE ZENER 5.6V 200MW SOD523F
товар відсутній
BZW04-10B R0G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 10.2VWM 16.7VC DO204AL
Description: TVS DIODE 10.2VWM 16.7VC DO204AL
товар відсутній
BZW04-37B R0G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 36.8VWM 59.3VC DO204AL
Description: TVS DIODE 36.8VWM 59.3VC DO204AL
товар відсутній
BZW04-44B R0G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 43.6VWM 70.1VC DO204AL
Description: TVS DIODE 43.6VWM 70.1VC DO204AL
товар відсутній
BZW04-48B R0G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 47.8VWM 77VC DO204AL
Description: TVS DIODE 47.8VWM 77VC DO204AL
товар відсутній
BZW04-53B R0G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 53VWM 85VC DO204AL
Description: TVS DIODE 53VWM 85VC DO204AL
товар відсутній
BZW04-58B R0G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 58.1VWM 92VC DO204AL
Description: TVS DIODE 58.1VWM 92VC DO204AL
товар відсутній
BZW04-48 R0G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 47.8VWM 77VC DO204AL
Description: TVS DIODE 47.8VWM 77VC DO204AL
товар відсутній
BZW04-53 R0G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 53VWM 85VC DO204AL
Description: TVS DIODE 53VWM 85VC DO204AL
товар відсутній
BZW04-58 R0G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 58.1VWM 92VC DO204AL
Description: TVS DIODE 58.1VWM 92VC DO204AL
товар відсутній
PU2DMH M3G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A MICRO SMA
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 36 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE GEN PURP 200V 2A MICRO SMA
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 36 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
товар відсутній
PU2DMH M3G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A MICRO SMA
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 36 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE GEN PURP 200V 2A MICRO SMA
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 36 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 5648 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 36.49 грн |
10+ | 30.02 грн |
100+ | 22.4 грн |
500+ | 16.51 грн |
1000+ | 12.76 грн |
TSM080NB03CR RLG |
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Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 14A/59A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 10V
Power Dissipation (Max): 3.1W (Ta), 55.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1097 pF @ 15 V
Description: MOSFET N-CH 30V 14A/59A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 10V
Power Dissipation (Max): 3.1W (Ta), 55.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1097 pF @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 19.38 грн |
5000+ | 17.68 грн |
TSM080NB03CR RLG |
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Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 14A/59A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 10V
Power Dissipation (Max): 3.1W (Ta), 55.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1097 pF @ 15 V
Description: MOSFET N-CH 30V 14A/59A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 10V
Power Dissipation (Max): 3.1W (Ta), 55.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1097 pF @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 50.94 грн |
10+ | 42.61 грн |
100+ | 29.46 грн |
500+ | 23.1 грн |
1000+ | 19.66 грн |
TSM250NB06LDCR RLG |
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Виробник: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 60V 6A/29A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 29A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 30V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Description: MOSFET 2N-CH 60V 6A/29A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 29A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 30V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 31.64 грн |
TSM250NB06LDCR RLG |
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Виробник: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 60V 6A/29A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 29A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 30V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Description: MOSFET 2N-CH 60V 6A/29A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 48W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 29A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 30V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
на замовлення 4774 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 84.39 грн |
10+ | 66.48 грн |
100+ | 51.7 грн |
500+ | 41.12 грн |
1000+ | 33.5 грн |
TS79M05CP ROG |
Виробник: Taiwan Semiconductor Corporation
Description: IC REG LINEAR -5V 500MA TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: 0°C ~ 125°C (TJ)
Output Configuration: Negative
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): -35V
Number of Regulators: 1
Supplier Device Package: TO-252 (DPAK)
Voltage - Output (Min/Fixed): -5V
Control Features: Current Limit
Part Status: Obsolete
PSRR: 66dB (120Hz)
Voltage Dropout (Max): 2V @ 500mA (Typ)
Protection Features: Over Temperature
Description: IC REG LINEAR -5V 500MA TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: 0°C ~ 125°C (TJ)
Output Configuration: Negative
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): -35V
Number of Regulators: 1
Supplier Device Package: TO-252 (DPAK)
Voltage - Output (Min/Fixed): -5V
Control Features: Current Limit
Part Status: Obsolete
PSRR: 66dB (120Hz)
Voltage Dropout (Max): 2V @ 500mA (Typ)
Protection Features: Over Temperature
товар відсутній
SK55C R7G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Description: DIODE SCHOTTKY 50V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
товар відсутній
SK55C M6G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Description: DIODE SCHOTTKY 50V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
товар відсутній
SK55CHM6G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 50V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Qualification: AEC-Q101
товар відсутній
SK55CHR7G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 50V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Qualification: AEC-Q101
товар відсутній
SK55C V6G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Description: DIODE SCHOTTKY 50V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
товар відсутній
SK55C V7G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Description: DIODE SCHOTTKY 50V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
товар відсутній
1SMB5954 M4G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 160V 3W DO214AA
Description: DIODE ZENER 160V 3W DO214AA
товар відсутній
1SMB5954HM4G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 160V 3W DO214AA
Description: DIODE ZENER 160V 3W DO214AA
товар відсутній