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SMAJ170CAHR3G SMAJ170CAHR3G Taiwan Semiconductor Corporation SMAJ%20SERIES_U2102.pdf Description: TVS DIODE 170VWM 275VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1.1A
Voltage - Reverse Standoff (Typ): 170V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 189V
Voltage - Clamping (Max) @ Ipp: 275V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
SMAJ170CAHR3G SMAJ170CAHR3G Taiwan Semiconductor Corporation SMAJ%20SERIES_U2102.pdf Description: TVS DIODE 170VWM 275VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1.1A
Voltage - Reverse Standoff (Typ): 170V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 189V
Voltage - Clamping (Max) @ Ipp: 275V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
SS26LHRVG SS26LHRVG Taiwan Semiconductor Corporation SS22L-SS215L_O2103.pdf Description: DIODE SCHOTTKY 60V 2A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Qualification: AEC-Q101
товар відсутній
ESH1DM RSG ESH1DM RSG Taiwan Semiconductor Corporation ESH1DM%20SERIES_D2103.pdf Description: DIODE GEN PURP 200V 1A MICRO SMA
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 216000 шт:
термін постачання 21-31 дні (днів)
3000+10.76 грн
6000+ 9.83 грн
9000+ 9.13 грн
30000+ 8.37 грн
75000+ 8.16 грн
Мінімальне замовлення: 3000
ESH1DM RSG ESH1DM RSG Taiwan Semiconductor Corporation ESH1DM%20SERIES_D2103.pdf Description: DIODE GEN PURP 200V 1A MICRO SMA
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 218485 шт:
термін постачання 21-31 дні (днів)
10+31.66 грн
12+ 26.21 грн
100+ 18.26 грн
500+ 13.38 грн
1000+ 10.87 грн
Мінімальне замовлення: 10
BZX584B6V2 RSG BZX584B6V2 RSG Taiwan Semiconductor Corporation pdf.php?pn=BZX584B6V2 Description: DIODE ZENER 6.2V 150MW SOD523F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-523F
Power - Max: 150 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
на замовлення 88000 шт:
термін постачання 21-31 дні (днів)
8000+5 грн
16000+ 4.16 грн
24000+ 4.09 грн
56000+ 3.17 грн
Мінімальне замовлення: 8000
BZX584B6V2 RSG BZX584B6V2 RSG Taiwan Semiconductor Corporation pdf.php?pn=BZX584B6V2 Description: DIODE ZENER 6.2V 150MW SOD523F
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-523F
Power - Max: 150 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
на замовлення 98055 шт:
термін постачання 21-31 дні (днів)
11+28.65 грн
15+ 19.6 грн
100+ 9.89 грн
500+ 7.57 грн
1000+ 5.62 грн
2000+ 4.73 грн
Мінімальне замовлення: 11
SF14G R1G SF14G R1G Taiwan Semiconductor Corporation SF11G%20SERIES_H2104.pdf Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
SF14GHR1G SF14GHR1G Taiwan Semiconductor Corporation SF11G%20SERIES_H2104.pdf Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
SF14G A0G SF14G A0G Taiwan Semiconductor Corporation SF11G%20SERIES_H2104.pdf Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
SF14GHA0G SF14GHA0G Taiwan Semiconductor Corporation SF11G%20SERIES_H2104.pdf Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
SF14G B0G SF14G B0G Taiwan Semiconductor Corporation SF11G%20SERIES_H2104.pdf Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
SF14GHB0G SF14GHB0G Taiwan Semiconductor Corporation SF11G%20SERIES_H2104.pdf Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
MTZJ4V7SA R0G MTZJ4V7SA R0G Taiwan Semiconductor Corporation MTZJ2V0SA%20SERIES_C1804.pdf Description: DIODE ZENER 4.56V 500MW DO34
товар відсутній
MTZJ4V7SB R0G MTZJ4V7SB R0G Taiwan Semiconductor Corporation MTZJ2V0SA%20SERIES_C1804.pdf Description: DIODE ZENER 4.68V 500MW DO34
товар відсутній
MTZJ4V7SC R0G MTZJ4V7SC R0G Taiwan Semiconductor Corporation MTZJ2V0SA%20SERIES_C1804.pdf Description: DIODE ZENER 4.81V 500MW DO34
товар відсутній
RS3K V6G RS3K V6G Taiwan Semiconductor Corporation RS3A%20SERIES_J1708.pdf Description: DIODE GEN PURP 800V 3A DO214AB
товар відсутній
RS3K R7G RS3K R7G Taiwan Semiconductor Corporation RS3A%20SERIES_L2102.pdf Description: DIODE GEN PURP 800V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товар відсутній
RS3K M6G RS3K M6G Taiwan Semiconductor Corporation RS3A%20SERIES_L2102.pdf Description: DIODE GEN PURP 800V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товар відсутній
RS3KHM6G RS3KHM6G Taiwan Semiconductor Corporation RS3A%20SERIES_L2102.pdf Description: DIODE GEN PURP 800V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
RS3KHR7G RS3KHR7G Taiwan Semiconductor Corporation RS3A%20SERIES_L2102.pdf Description: DIODE GEN PURP 800V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
RS3K V7G RS3K V7G Taiwan Semiconductor Corporation RS3A%20SERIES_L2102.pdf Description: DIODE GEN PURP 800V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товар відсутній
BZT55C20 L0G BZT55C20 L0G Taiwan Semiconductor Corporation BZT55C2V4%20SERIES_G1804.pdf Description: DIODE ZENER 20V 500MW MINI MELF
товар відсутній
BZT55C20 L1G BZT55C20 L1G Taiwan Semiconductor Corporation BZT55C2V4%20SERIES_G1804.pdf Description: DIODE ZENER 20V 500MW MINI MELF
товар відсутній
BZT55C18 L0G BZT55C18 L0G Taiwan Semiconductor Corporation BZT55C2V4 SERIES_I2301.pdf Description: DIODE ZENER 18V 500MW MINI MELF
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 13 V
товар відсутній
BZT55C18 L1G BZT55C18 L1G Taiwan Semiconductor Corporation BZT55C2V4%20SERIES_G1804.pdf Description: DIODE ZENER 18V 500MW MINI MELF
товар відсутній
BZD27C43P RHG BZD27C43P RHG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 43V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.97%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
товар відсутній
BZD27C43P M2G BZD27C43P M2G Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 43V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.97%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
товар відсутній
BZD27C43P MHG BZD27C43P MHG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 43V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.97%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
товар відсутній
BZD27C43P MQG BZD27C43P MQG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 43V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.97%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
товар відсутній
BZD27C43P MTG BZD27C43P MTG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 43V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.97%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
товар відсутній
BZD27C43P RQG BZD27C43P RQG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 43V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.97%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
товар відсутній
BZD27C43P RTG BZD27C43P RTG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 43V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.97%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
товар відсутній
BZD27C43P RFG BZD27C43P RFG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 43V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.97%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
товар відсутній
BZD27C43P RUG BZD27C43P RUG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 43V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.97%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
товар відсутній
BZD27C43PW BZD27C43PW Taiwan Semiconductor Corporation pdf.php?pn=BZD27C43PW Description: DIODE ZENER 43V 1W SOD123W
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOD-123W
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
товар відсутній
BZD27C43PW BZD27C43PW Taiwan Semiconductor Corporation pdf.php?pn=BZD27C43PW Description: DIODE ZENER 43V 1W SOD123W
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOD-123W
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
товар відсутній
BZD27C43PWH BZD27C43PWH Taiwan Semiconductor Corporation pdf.php?pn=BZD27C43PWH Description: DIODE ZENER 43V 1W SOD123W
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOD-123W
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
товар відсутній
BZD27C43PWH BZD27C43PWH Taiwan Semiconductor Corporation pdf.php?pn=BZD27C43PWH Description: DIODE ZENER 43V 1W SOD123W
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOD-123W
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
товар відсутній
P6KE9.1CA A0G P6KE9.1CA A0G Taiwan Semiconductor Corporation P6KE%20SERIES_P2203.pdf Description: TVS DIODE 7.78VWM 13.4VC DO204AC
товар відсутній
P6KE9.1CAHA0G P6KE9.1CAHA0G Taiwan Semiconductor Corporation P6KE%20SERIES_N2104.pdf Description: TVS DIODE 7.78VWM 13.4VC DO204AC
товар відсутній
P6KE9.1CA B0G P6KE9.1CA B0G Taiwan Semiconductor Corporation P6KE%20SERIES_P2203.pdf Description: TVS DIODE 7.78VWM 13.4VC DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 47A
Voltage - Reverse Standoff (Typ): 7.78V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.65V
Voltage - Clamping (Max) @ Ipp: 13.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
товар відсутній
P6KE9.1CAHB0G P6KE9.1CAHB0G Taiwan Semiconductor Corporation P6KE%20SERIES_N2104.pdf Description: TVS DIODE 7.78VWM 13.4VC DO204AC
товар відсутній
P4KE75A R0G P4KE75A R0G Taiwan Semiconductor Corporation P4KE%20SERIES_N2104.pdf Description: TVS DIODE 64.1VWM 103VC DO204AL
товар відсутній
P4KE75AHR0G P4KE75AHR0G Taiwan Semiconductor Corporation P4KE%20SERIES_N2104.pdf Description: TVS DIODE 64.1VWM 103VC DO204AL
товар відсутній
P4KE75A R1G P4KE75A R1G Taiwan Semiconductor Corporation P4KE%20SERIES_N2104.pdf Description: TVS DIODE 64.1VWM 103VC DO204AL
товар відсутній
P4KE75AHR1G P4KE75AHR1G Taiwan Semiconductor Corporation P4KE%20SERIES_N2104.pdf Description: TVS DIODE 64.1VWM 103VC DO204AL
товар відсутній
P4KE75A A0G P4KE75A A0G Taiwan Semiconductor Corporation P4KE%20SERIES_N2104.pdf Description: TVS DIODE 64.1VWM 103VC DO204AL
товар відсутній
P4KE75AHA0G P4KE75AHA0G Taiwan Semiconductor Corporation P4KE%20SERIES_N2104.pdf Description: TVS DIODE 64.1VWM 103VC DO204AL
товар відсутній
P4KE75A B0G P4KE75A B0G Taiwan Semiconductor Corporation P4KE%20SERIES_N2104.pdf Description: TVS DIODE 64.1VWM 103VC DO204AL
товар відсутній
P4KE75AHB0G P4KE75AHB0G Taiwan Semiconductor Corporation P4KE%20SERIES_N2104.pdf Description: TVS DIODE 64.1VWM 103VC DO204AL
товар відсутній
P4SMA160A M2G P4SMA160A M2G Taiwan Semiconductor Corporation P4SMA%20SERIES_S2102.pdf Description: TVS DIODE 136VWM 219VC DO214AC
товар відсутній
P4SMA16A M2G P4SMA16A M2G Taiwan Semiconductor Corporation P4SMA%20SERIES_S2102.pdf Description: TVS DIODE 13.6VWM 22.5VC DO214AC
товар відсутній
1.5SMC18CA M6G 1.5SMC18CA M6G Taiwan Semiconductor Corporation 1.5SMC%20SERIES_S2207.pdf Description: TVS DIODE 15.3VWM 25.5VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 60A
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
товар відсутній
1.5SMC18CA V6G 1.5SMC18CA V6G Taiwan Semiconductor Corporation 1.5SMC%20SERIES_R2102.pdf Description: TVS DIODE 15.3VWM 25.5VC DO214AB
товар відсутній
1.5SMC18CA R7G 1.5SMC18CA R7G Taiwan Semiconductor Corporation 1.5SMC%20SERIES_S2207.pdf Description: TVS DIODE 15.3VWM 25.5VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 60A
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
товар відсутній
1.5SMC18CAHM6G 1.5SMC18CAHM6G Taiwan Semiconductor Corporation 1.5SMCH%20SERIES_B2207.pdf Description: TVS DIODE 15.3VWM 25.5VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 60A
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
товар відсутній
1.5SMC18CAHR7G 1.5SMC18CAHR7G Taiwan Semiconductor Corporation 1.5SMCH%20SERIES_B2207.pdf Description: TVS DIODE 15.3VWM 25.5VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 60A
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
товар відсутній
1.5SMC18CA V7G 1.5SMC18CA V7G Taiwan Semiconductor Corporation 1.5SMC%20SERIES_S2207.pdf Description: TVS DIODE 15.3VWM 25.5VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 60A
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
товар відсутній
1.5SMC43A R7G 1.5SMC43A R7G Taiwan Semiconductor Corporation 1.5SMCH%20SERIES_B2207.pdf Description: TVS DIODE 36.8VWM 59.3VC DO214AB
товар відсутній
SMAJ170CAHR3G SMAJ%20SERIES_U2102.pdf
SMAJ170CAHR3G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 170VWM 275VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1.1A
Voltage - Reverse Standoff (Typ): 170V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 189V
Voltage - Clamping (Max) @ Ipp: 275V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
SMAJ170CAHR3G SMAJ%20SERIES_U2102.pdf
SMAJ170CAHR3G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 170VWM 275VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1.1A
Voltage - Reverse Standoff (Typ): 170V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 189V
Voltage - Clamping (Max) @ Ipp: 275V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
SS26LHRVG SS22L-SS215L_O2103.pdf
SS26LHRVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 2A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Qualification: AEC-Q101
товар відсутній
ESH1DM RSG ESH1DM%20SERIES_D2103.pdf
ESH1DM RSG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A MICRO SMA
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 216000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+10.76 грн
6000+ 9.83 грн
9000+ 9.13 грн
30000+ 8.37 грн
75000+ 8.16 грн
Мінімальне замовлення: 3000
ESH1DM RSG ESH1DM%20SERIES_D2103.pdf
ESH1DM RSG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A MICRO SMA
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 218485 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+31.66 грн
12+ 26.21 грн
100+ 18.26 грн
500+ 13.38 грн
1000+ 10.87 грн
Мінімальне замовлення: 10
BZX584B6V2 RSG pdf.php?pn=BZX584B6V2
BZX584B6V2 RSG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.2V 150MW SOD523F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-523F
Power - Max: 150 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
на замовлення 88000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8000+5 грн
16000+ 4.16 грн
24000+ 4.09 грн
56000+ 3.17 грн
Мінімальне замовлення: 8000
BZX584B6V2 RSG pdf.php?pn=BZX584B6V2
BZX584B6V2 RSG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.2V 150MW SOD523F
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-523F
Power - Max: 150 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
на замовлення 98055 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
11+28.65 грн
15+ 19.6 грн
100+ 9.89 грн
500+ 7.57 грн
1000+ 5.62 грн
2000+ 4.73 грн
Мінімальне замовлення: 11
SF14G R1G SF11G%20SERIES_H2104.pdf
SF14G R1G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
SF14GHR1G SF11G%20SERIES_H2104.pdf
SF14GHR1G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
SF14G A0G SF11G%20SERIES_H2104.pdf
SF14G A0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
SF14GHA0G SF11G%20SERIES_H2104.pdf
SF14GHA0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
SF14G B0G SF11G%20SERIES_H2104.pdf
SF14G B0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
SF14GHB0G SF11G%20SERIES_H2104.pdf
SF14GHB0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
MTZJ4V7SA R0G MTZJ2V0SA%20SERIES_C1804.pdf
MTZJ4V7SA R0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.56V 500MW DO34
товар відсутній
MTZJ4V7SB R0G MTZJ2V0SA%20SERIES_C1804.pdf
MTZJ4V7SB R0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.68V 500MW DO34
товар відсутній
MTZJ4V7SC R0G MTZJ2V0SA%20SERIES_C1804.pdf
MTZJ4V7SC R0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.81V 500MW DO34
товар відсутній
RS3K V6G RS3A%20SERIES_J1708.pdf
RS3K V6G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 3A DO214AB
товар відсутній
RS3K R7G RS3A%20SERIES_L2102.pdf
RS3K R7G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товар відсутній
RS3K M6G RS3A%20SERIES_L2102.pdf
RS3K M6G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товар відсутній
RS3KHM6G RS3A%20SERIES_L2102.pdf
RS3KHM6G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
RS3KHR7G RS3A%20SERIES_L2102.pdf
RS3KHR7G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
RS3K V7G RS3A%20SERIES_L2102.pdf
RS3K V7G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товар відсутній
BZT55C20 L0G BZT55C2V4%20SERIES_G1804.pdf
BZT55C20 L0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 20V 500MW MINI MELF
товар відсутній
BZT55C20 L1G BZT55C2V4%20SERIES_G1804.pdf
BZT55C20 L1G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 20V 500MW MINI MELF
товар відсутній
BZT55C18 L0G BZT55C2V4 SERIES_I2301.pdf
BZT55C18 L0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 18V 500MW MINI MELF
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 13 V
товар відсутній
BZT55C18 L1G BZT55C2V4%20SERIES_G1804.pdf
BZT55C18 L1G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 18V 500MW MINI MELF
товар відсутній
BZD27C43P RHG BZD27C%20SERIES_AB2103.pdf
BZD27C43P RHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 43V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.97%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
товар відсутній
BZD27C43P M2G BZD27C%20SERIES_AB2103.pdf
BZD27C43P M2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 43V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.97%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
товар відсутній
BZD27C43P MHG BZD27C%20SERIES_AB2103.pdf
BZD27C43P MHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 43V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.97%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
товар відсутній
BZD27C43P MQG BZD27C%20SERIES_AB2103.pdf
BZD27C43P MQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 43V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.97%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
товар відсутній
BZD27C43P MTG BZD27C%20SERIES_AB2103.pdf
BZD27C43P MTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 43V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.97%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
товар відсутній
BZD27C43P RQG BZD27C%20SERIES_AB2103.pdf
BZD27C43P RQG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 43V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.97%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
товар відсутній
BZD27C43P RTG BZD27C%20SERIES_AB2103.pdf
BZD27C43P RTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 43V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.97%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
товар відсутній
BZD27C43P RFG BZD27C%20SERIES_AB2103.pdf
BZD27C43P RFG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 43V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.97%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
товар відсутній
BZD27C43P RUG BZD27C%20SERIES_AB2103.pdf
BZD27C43P RUG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 43V 1W SUB SMA
Packaging: Tape & Reel (TR)
Tolerance: ±6.97%
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
товар відсутній
BZD27C43PW pdf.php?pn=BZD27C43PW
BZD27C43PW
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 43V 1W SOD123W
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOD-123W
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
товар відсутній
BZD27C43PW pdf.php?pn=BZD27C43PW
BZD27C43PW
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 43V 1W SOD123W
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOD-123W
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
товар відсутній
BZD27C43PWH pdf.php?pn=BZD27C43PWH
BZD27C43PWH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 43V 1W SOD123W
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOD-123W
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
товар відсутній
BZD27C43PWH pdf.php?pn=BZD27C43PWH
BZD27C43PWH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 43V 1W SOD123W
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOD-123W
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 33 V
товар відсутній
P6KE9.1CA A0G P6KE%20SERIES_P2203.pdf
P6KE9.1CA A0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 7.78VWM 13.4VC DO204AC
товар відсутній
P6KE9.1CAHA0G P6KE%20SERIES_N2104.pdf
P6KE9.1CAHA0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 7.78VWM 13.4VC DO204AC
товар відсутній
P6KE9.1CA B0G P6KE%20SERIES_P2203.pdf
P6KE9.1CA B0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 7.78VWM 13.4VC DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 47A
Voltage - Reverse Standoff (Typ): 7.78V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.65V
Voltage - Clamping (Max) @ Ipp: 13.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
товар відсутній
P6KE9.1CAHB0G P6KE%20SERIES_N2104.pdf
P6KE9.1CAHB0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 7.78VWM 13.4VC DO204AC
товар відсутній
P4KE75A R0G P4KE%20SERIES_N2104.pdf
P4KE75A R0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 64.1VWM 103VC DO204AL
товар відсутній
P4KE75AHR0G P4KE%20SERIES_N2104.pdf
P4KE75AHR0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 64.1VWM 103VC DO204AL
товар відсутній
P4KE75A R1G P4KE%20SERIES_N2104.pdf
P4KE75A R1G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 64.1VWM 103VC DO204AL
товар відсутній
P4KE75AHR1G P4KE%20SERIES_N2104.pdf
P4KE75AHR1G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 64.1VWM 103VC DO204AL
товар відсутній
P4KE75A A0G P4KE%20SERIES_N2104.pdf
P4KE75A A0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 64.1VWM 103VC DO204AL
товар відсутній
P4KE75AHA0G P4KE%20SERIES_N2104.pdf
P4KE75AHA0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 64.1VWM 103VC DO204AL
товар відсутній
P4KE75A B0G P4KE%20SERIES_N2104.pdf
P4KE75A B0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 64.1VWM 103VC DO204AL
товар відсутній
P4KE75AHB0G P4KE%20SERIES_N2104.pdf
P4KE75AHB0G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 64.1VWM 103VC DO204AL
товар відсутній
P4SMA160A M2G P4SMA%20SERIES_S2102.pdf
P4SMA160A M2G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 136VWM 219VC DO214AC
товар відсутній
P4SMA16A M2G P4SMA%20SERIES_S2102.pdf
P4SMA16A M2G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 13.6VWM 22.5VC DO214AC
товар відсутній
1.5SMC18CA M6G 1.5SMC%20SERIES_S2207.pdf
1.5SMC18CA M6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 15.3VWM 25.5VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 60A
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
товар відсутній
1.5SMC18CA V6G 1.5SMC%20SERIES_R2102.pdf
1.5SMC18CA V6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 15.3VWM 25.5VC DO214AB
товар відсутній
1.5SMC18CA R7G 1.5SMC%20SERIES_S2207.pdf
1.5SMC18CA R7G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 15.3VWM 25.5VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 60A
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
товар відсутній
1.5SMC18CAHM6G 1.5SMCH%20SERIES_B2207.pdf
1.5SMC18CAHM6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 15.3VWM 25.5VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 60A
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
товар відсутній
1.5SMC18CAHR7G 1.5SMCH%20SERIES_B2207.pdf
1.5SMC18CAHR7G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 15.3VWM 25.5VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 60A
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
товар відсутній
1.5SMC18CA V7G 1.5SMC%20SERIES_S2207.pdf
1.5SMC18CA V7G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 15.3VWM 25.5VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 60A
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
товар відсутній
1.5SMC43A R7G 1.5SMCH%20SERIES_B2207.pdf
1.5SMC43A R7G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 36.8VWM 59.3VC DO214AB
товар відсутній
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