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RGTV60TS65DGC11 RGTV60TS65DGC11 Rohm Semiconductor datasheet?p=RGTV60TS65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRNCH FIELD 650V 60A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 95 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/105ns
Switching Energy: 570µJ (on), 500µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 64 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 194 W
товар відсутній
RGTV60TS65GC11 RGTV60TS65GC11 Rohm Semiconductor datasheet?p=RGTV60TS65&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRNCH FIELD 650V 60A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/105ns
Switching Energy: 570µJ (on), 500µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 64 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 194 W
на замовлення 157 шт:
термін постачання 21-31 дні (днів)
3+115.98 грн
30+ 89.94 грн
120+ 73.99 грн
Мінімальне замовлення: 3
RGW00TK65DGVC11 RGW00TK65DGVC11 Rohm Semiconductor datasheet?p=RGW00TK65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRNCH FIELD 650V 45A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 95 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 52ns/180ns
Switching Energy: 1.18mJ (on), 960µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 141 nC
Part Status: Active
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 89 W
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
1+494.45 грн
30+ 380.23 грн
120+ 340.2 грн
RGW00TK65GVC11 RGW00TK65GVC11 Rohm Semiconductor datasheet?p=RGW00TK65&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRNCH FIELD 650V 45A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 52ns/180ns
Switching Energy: 1.18mJ (on), 960µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 141 nC
Part Status: Active
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 89 W
товар відсутній
RGW00TS65DGC11 RGW00TS65DGC11 Rohm Semiconductor rgw00ts65d-e.pdf Description: IGBT TRNCH FIELD 650V 96A TO247N
товар відсутній
RGW00TS65GC11 RGW00TS65GC11 Rohm Semiconductor rgw00ts65-e.pdf Description: IGBT TRNCH FIELD 650V 96A TO247N
на замовлення 439 шт:
термін постачання 21-31 дні (днів)
1+436.46 грн
10+ 377.31 грн
100+ 309.13 грн
RGW60TS65DGC11 RGW60TS65DGC11 Rohm Semiconductor datasheet?p=RGW60TS65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRNCH FIELD 650V 60A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 92 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/114ns
Switching Energy: 480µJ (on), 490µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 84 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 178 W
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
1+402.89 грн
30+ 307.6 грн
120+ 263.66 грн
RGW60TS65GC11 RGW60TS65GC11 Rohm Semiconductor datasheet?p=RGW60TS65&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRNCH FIELD 650V 60A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/114ns
Switching Energy: 480µJ (on), 490µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 84 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 178 W
на замовлення 430 шт:
термін постачання 21-31 дні (днів)
2+243.41 грн
30+ 185.88 грн
120+ 159.32 грн
Мінімальне замовлення: 2
RGW80TK65DGVC11 RGW80TK65DGVC11 Rohm Semiconductor datasheet?p=RGW80TK65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRNCH FIELD 650V 39A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 92 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/143ns
Switching Energy: 760µJ (on), 720µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 39 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 81 W
на замовлення 440 шт:
термін постачання 21-31 дні (днів)
1+314.37 грн
30+ 241.67 грн
120+ 223.94 грн
RGW80TK65GVC11 RGW80TK65GVC11 Rohm Semiconductor datasheet?p=RGW80TK65&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRNCH FIELD 650V 39A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/143ns
Switching Energy: 760µJ (on), 720µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 39 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 81 W
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
1+435.7 грн
30+ 332.71 грн
120+ 285.17 грн
RGW80TS65DGC11 RGW80TS65DGC11 Rohm Semiconductor datasheet?p=RGW80TS65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRNCH FIELD 650V 78A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 92 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/143ns
Switching Energy: 760µJ (on), 720µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 110 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 78 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 214 W
на замовлення 314 шт:
термін постачання 21-31 дні (днів)
1+443.33 грн
30+ 338.32 грн
120+ 289.99 грн
RGW80TS65GC11 RGW80TS65GC11 Rohm Semiconductor datasheet?p=RGW80TS65&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRNCH FIELD 650V 78A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/143ns
Switching Energy: 760µJ (on), 720µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 110 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 78 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 214 W
на замовлення 152 шт:
термін постачання 21-31 дні (днів)
1+416.62 грн
10+ 359.97 грн
100+ 294.95 грн
BH1726NUC-E2 BH1726NUC-E2 Rohm Semiconductor datasheet?p=BH1726NUC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: SENSOR OPT AMBIENT WSON008X2120
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Output Type: I2C
Mounting Type: Surface Mount
Type: Ambient
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Supplier Device Package: WSON008X2120
Proximity Detection: No
Part Status: Active
товар відсутній
BU52792GWZ-E2 Rohm Semiconductor bu52792gwz-e Description: OMNIPOLAR HALL IC INCORPORATING
товар відсутній
BH1726NUC-E2 BH1726NUC-E2 Rohm Semiconductor datasheet?p=BH1726NUC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: SENSOR OPT AMBIENT WSON008X2120
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Output Type: I2C
Mounting Type: Surface Mount
Type: Ambient
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Supplier Device Package: WSON008X2120
Proximity Detection: No
Part Status: Active
товар відсутній
BU52792GWZ-E2 Rohm Semiconductor bu52792gwz-e Description: OMNIPOLAR HALL IC INCORPORATING
на замовлення 2715 шт:
термін постачання 21-31 дні (днів)
BU52792GWZ-E2 Rohm Semiconductor bu52792gwz-e Description: OMNIPOLAR HALL IC INCORPORATING
на замовлення 2715 шт:
термін постачання 21-31 дні (днів)
ROHM-STEPMO_EVK_206 ROHM-STEPMO_EVK_206 Rohm Semiconductor STEPMO_EVK_20x_Manual_REV1.3.pdf Description: BD63720A STEPMOTOR DRVR SHIELD
Packaging: Box
Function: Motor Controller/Driver, Stepper
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BD63720A
Platform: Arduino
Part Status: Active
товар відсутній
SCS230KE2AHRC SCS230KE2AHRC Rohm Semiconductor Description: DIODE ARRAY SCHOTTKY 1200V TO247
товар відсутній
SCS240KE2AHRC SCS240KE2AHRC Rohm Semiconductor datasheet?p=SCS240KE2AHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTTKY 1200V TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
товар відсутній
SCS310AMC SCS310AMC Rohm Semiconductor scs310am-e.pdf Description: SHORTER RECOVERY TIME, ENABLING
на замовлення 345 шт:
термін постачання 21-31 дні (днів)
1+529.55 грн
10+ 457.77 грн
100+ 375.08 грн
SCS312AHGC9 SCS312AHGC9 Rohm Semiconductor datasheet?p=SCS312AH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SIL CARB 650V 12A TO220ACP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 600pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220ACP
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
на замовлення 43 шт:
термін постачання 21-31 дні (днів)
1+529.55 грн
10+ 460.78 грн
SCS315AHGC9 SCS315AHGC9 Rohm Semiconductor datasheet?p=SCS315AH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SIL CARB 650V 15A TO220ACP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 750pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220ACP
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 75 µA @ 650 V
на замовлення 392 шт:
термін постачання 21-31 дні (днів)
1+563.89 грн
50+ 433.02 грн
100+ 387.45 грн
SCS320AHGC9 SCS320AHGC9 Rohm Semiconductor datasheet?p=SCS320AH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SIL CARB 650V 20A TO220ACP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1000pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220ACP
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
на замовлення 510 шт:
термін постачання 21-31 дні (днів)
1+701.24 грн
50+ 538.65 грн
100+ 481.96 грн
500+ 399.08 грн
SDR03EZPJ203 SDR03EZPJ203 Rohm Semiconductor sdr-e.pdf Description: RES SMD 20 KOHM 5% 0.3W 0603
Packaging: Tape & Reel (TR)
Power (Watts): 0.3W
Tolerance: ±5%
Features: Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 20 kOhms
товар відсутній
SDR03EZPJ203 SDR03EZPJ203 Rohm Semiconductor sdr-e.pdf Description: RES SMD 20 KOHM 5% 0.3W 0603
Packaging: Cut Tape (CT)
Power (Watts): 0.3W
Tolerance: ±5%
Features: Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 20 kOhms
на замовлення 1943 шт:
термін постачання 21-31 дні (днів)
34+9.16 грн
73+ 4.04 грн
110+ 2.67 грн
130+ 2.12 грн
500+ 1.5 грн
1000+ 1.31 грн
Мінімальне замовлення: 34
R6003KND3TL1 R6003KND3TL1 Rohm Semiconductor datasheet?p=R6003KND3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 3A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 185 pF @ 25 V
товар відсутній
R6003KND3TL1 R6003KND3TL1 Rohm Semiconductor datasheet?p=R6003KND3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 3A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 185 pF @ 25 V
на замовлення 117 шт:
термін постачання 21-31 дні (днів)
3+128.19 грн
10+ 110.58 грн
100+ 88.9 грн
Мінімальне замовлення: 3
2SA2088U3T106 2SA2088U3T106 Rohm Semiconductor datasheet?p=2SA2088U3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PNP 60V 0.5A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 200 mW
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+5.92 грн
6000+ 5.57 грн
9000+ 4.93 грн
Мінімальне замовлення: 3000
DTA113ZU3T106 DTA113ZU3T106 Rohm Semiconductor datasheet?p=DTA113ZU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+2.36 грн
Мінімальне замовлення: 3000
DTA115EU3T106 DTA115EU3T106 Rohm Semiconductor dta115eu3t106-e.pdf Description: DTA115EU3 IS AN DIGITAL TRANSIST
товар відсутній
DTA123EU3T106 DTA123EU3T106 Rohm Semiconductor datasheet?p=DTA123EU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DTA123EU3 IS AN DIGITAL TRANSIST
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
товар відсутній
DTA123YU3T106 DTA123YU3T106 Rohm Semiconductor datasheet?p=DTA123YU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DTA123YU3 IS AN DIGITAL TRANSIST
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
товар відсутній
DTC113ZU3T106 DTC113ZU3T106 Rohm Semiconductor datasheet?p=DTC113ZU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+2.39 грн
Мінімальне замовлення: 3000
DTC115GU3T106 DTC115GU3T106 Rohm Semiconductor datasheet?p=DTC115GU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Emitter Base (R2): 100 kOhms
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+2.33 грн
Мінімальне замовлення: 3000
DTC123YU3T106 DTC123YU3T106 Rohm Semiconductor datasheet?p=DTC123YU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+2.39 грн
Мінімальне замовлення: 3000
DTC143EU3T106 DTC143EU3T106 Rohm Semiconductor datasheet?p=DTC143EU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+2.38 грн
Мінімальне замовлення: 3000
DTC143XU3T106 DTC143XU3T106 Rohm Semiconductor datasheet?p=DTC143XU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
товар відсутній
2SA2088U3T106 2SA2088U3T106 Rohm Semiconductor datasheet?p=2SA2088U3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PNP 60V 0.5A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 200 mW
на замовлення 10737 шт:
термін постачання 21-31 дні (днів)
12+26.71 грн
17+ 18.3 грн
100+ 9.23 грн
500+ 7.68 грн
1000+ 5.98 грн
Мінімальне замовлення: 12
DTA113ZU3T106 DTA113ZU3T106 Rohm Semiconductor datasheet?p=DTA113ZU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 10620 шт:
термін постачання 21-31 дні (днів)
23+13.73 грн
32+ 9.26 грн
100+ 4.53 грн
500+ 3.54 грн
1000+ 2.46 грн
Мінімальне замовлення: 23
DTA115EU3T106 DTA115EU3T106 Rohm Semiconductor dta115eu3t106-e.pdf Description: DTA115EU3 IS AN DIGITAL TRANSIST
на замовлення 2742 шт:
термін постачання 21-31 дні (днів)
20+15.26 грн
25+ 12.12 грн
100+ 6.42 грн
500+ 3.96 грн
1000+ 2.7 грн
Мінімальне замовлення: 20
DTA123EU3T106 DTA123EU3T106 Rohm Semiconductor datasheet?p=DTA123EU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DTA123EU3 IS AN DIGITAL TRANSIST
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
на замовлення 480 шт:
термін постачання 21-31 дні (днів)
20+15.26 грн
25+ 12.2 грн
100+ 6.47 грн
Мінімальне замовлення: 20
DTA123YU3T106 DTA123YU3T106 Rohm Semiconductor datasheet?p=DTA123YU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DTA123YU3 IS AN DIGITAL TRANSIST
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 410 шт:
термін постачання 21-31 дні (днів)
20+15.26 грн
25+ 12.2 грн
100+ 6.47 грн
Мінімальне замовлення: 20
DTC113ZU3T106 DTC113ZU3T106 Rohm Semiconductor datasheet?p=DTC113ZU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 3590 шт:
термін постачання 21-31 дні (днів)
22+14.5 грн
32+ 9.41 грн
100+ 4.59 грн
500+ 3.59 грн
1000+ 2.49 грн
Мінімальне замовлення: 22
DTC115GU3T106 DTC115GU3T106 Rohm Semiconductor datasheet?p=DTC115GU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Emitter Base (R2): 100 kOhms
на замовлення 5970 шт:
термін постачання 21-31 дні (днів)
23+13.73 грн
32+ 9.18 грн
100+ 4.48 грн
500+ 3.5 грн
1000+ 2.43 грн
Мінімальне замовлення: 23
DTC123YU3T106 DTC123YU3T106 Rohm Semiconductor datasheet?p=DTC123YU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 5845 шт:
термін постачання 21-31 дні (днів)
22+14.5 грн
32+ 9.41 грн
100+ 4.59 грн
500+ 3.59 грн
1000+ 2.49 грн
Мінімальне замовлення: 22
DTC143EU3T106 DTC143EU3T106 Rohm Semiconductor datasheet?p=DTC143EU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
на замовлення 8702 шт:
термін постачання 21-31 дні (днів)
22+14.5 грн
32+ 9.41 грн
100+ 4.57 грн
500+ 3.57 грн
1000+ 2.48 грн
Мінімальне замовлення: 22
DTC143XU3T106 DTC143XU3T106 Rohm Semiconductor datasheet?p=DTC143XU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 2383 шт:
термін постачання 21-31 дні (днів)
31+9.92 грн
45+ 6.61 грн
100+ 3.21 грн
500+ 2.51 грн
1000+ 1.75 грн
Мінімальне замовлення: 31
RS1P600BETB1 RS1P600BETB1 Rohm Semiconductor rs1p600betb1-e.pdf Description: MOSFET N-CH 100V 17.5A/60A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 17.5A, 10V
Power Dissipation (Max): 3W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: 8-HSOP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
товар відсутній
RS1P600BETB1 RS1P600BETB1 Rohm Semiconductor rs1p600betb1-e.pdf Description: MOSFET N-CH 100V 17.5A/60A 8HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 17.5A, 10V
Power Dissipation (Max): 3W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: 8-HSOP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
товар відсутній
R8002ANJFRGTL R8002ANJFRGTL Rohm Semiconductor datasheet?p=R8002ANJFRG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 800V 2A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
RSJ451N04FRATL RSJ451N04FRATL Rohm Semiconductor rsj451n04fratl-e.pdf Description: MOSFET N-CH 40V 45A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 25A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
PDZVTFTR11B PDZVTFTR11B Rohm Semiconductor datasheet?p=PDZVTF11B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 1165V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±5.91%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11.65 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: PMDTM
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 8 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+8.16 грн
Мінімальне замовлення: 3000
PDZVTFTR12B PDZVTFTR12B Rohm Semiconductor datasheet?p=PDZVTF12B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 12.75V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±6.25%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12.75 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 9 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+6.61 грн
Мінімальне замовлення: 3000
PDZVTFTR13B PDZVTFTR13B Rohm Semiconductor datasheet?p=PDZVTF13B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 14.15V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±6.54%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 14.15 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: PMDTM
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 10 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+8.16 грн
Мінімальне замовлення: 3000
PDZVTFTR16B PDZVTFTR16B Rohm Semiconductor Description: DIODE ZENER 17.25V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±6.56%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 17.25 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 12 V
товар відсутній
PDZVTFTR18B PDZVTFTR18B Rohm Semiconductor datasheet?p=PDZVTF18B&amp;dist=Digi-key&amp;media=referral&amp;source=digi-key.com&amp;campaign=Digi-key Description: DIODE ZENER 19.15V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±6.39%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 19.15 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 13 V
товар відсутній
PDZVTFTR2.4B PDZVTFTR2.4B Rohm Semiconductor datasheet?p=PDZVTF2.4B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 2.55V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±6.25%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.55 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: PMDTM
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 200 µA @ 1 V
Qualification: AEC-Q101
товар відсутній
PDZVTFTR20B PDZVTFTR20B Rohm Semiconductor pdzvtftr20b-e Description: PDZVTF20B IS A ZENER DIODE WITH
товар відсутній
PDZVTFTR22B PDZVTFTR22B Rohm Semiconductor datasheet?p=PDZVTF22B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 23.25V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±5.68%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 23.25 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 17 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+8.16 грн
Мінімальне замовлення: 3000
RGTV60TS65DGC11 datasheet?p=RGTV60TS65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGTV60TS65DGC11
Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 60A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 95 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/105ns
Switching Energy: 570µJ (on), 500µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 64 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 194 W
товар відсутній
RGTV60TS65GC11 datasheet?p=RGTV60TS65&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGTV60TS65GC11
Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 60A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/105ns
Switching Energy: 570µJ (on), 500µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 64 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 194 W
на замовлення 157 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+115.98 грн
30+ 89.94 грн
120+ 73.99 грн
Мінімальне замовлення: 3
RGW00TK65DGVC11 datasheet?p=RGW00TK65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGW00TK65DGVC11
Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 45A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 95 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 52ns/180ns
Switching Energy: 1.18mJ (on), 960µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 141 nC
Part Status: Active
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 89 W
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+494.45 грн
30+ 380.23 грн
120+ 340.2 грн
RGW00TK65GVC11 datasheet?p=RGW00TK65&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGW00TK65GVC11
Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 45A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 52ns/180ns
Switching Energy: 1.18mJ (on), 960µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 141 nC
Part Status: Active
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 89 W
товар відсутній
RGW00TS65DGC11 rgw00ts65d-e.pdf
RGW00TS65DGC11
Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 96A TO247N
товар відсутній
RGW00TS65GC11 rgw00ts65-e.pdf
RGW00TS65GC11
Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 96A TO247N
на замовлення 439 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+436.46 грн
10+ 377.31 грн
100+ 309.13 грн
RGW60TS65DGC11 datasheet?p=RGW60TS65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGW60TS65DGC11
Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 60A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 92 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/114ns
Switching Energy: 480µJ (on), 490µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 84 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 178 W
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+402.89 грн
30+ 307.6 грн
120+ 263.66 грн
RGW60TS65GC11 datasheet?p=RGW60TS65&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGW60TS65GC11
Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 60A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/114ns
Switching Energy: 480µJ (on), 490µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 84 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 178 W
на замовлення 430 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+243.41 грн
30+ 185.88 грн
120+ 159.32 грн
Мінімальне замовлення: 2
RGW80TK65DGVC11 datasheet?p=RGW80TK65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGW80TK65DGVC11
Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 39A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 92 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/143ns
Switching Energy: 760µJ (on), 720µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 39 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 81 W
на замовлення 440 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+314.37 грн
30+ 241.67 грн
120+ 223.94 грн
RGW80TK65GVC11 datasheet?p=RGW80TK65&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGW80TK65GVC11
Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 39A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/143ns
Switching Energy: 760µJ (on), 720µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 39 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 81 W
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+435.7 грн
30+ 332.71 грн
120+ 285.17 грн
RGW80TS65DGC11 datasheet?p=RGW80TS65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGW80TS65DGC11
Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 78A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 92 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/143ns
Switching Energy: 760µJ (on), 720µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 110 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 78 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 214 W
на замовлення 314 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+443.33 грн
30+ 338.32 грн
120+ 289.99 грн
RGW80TS65GC11 datasheet?p=RGW80TS65&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGW80TS65GC11
Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 78A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/143ns
Switching Energy: 760µJ (on), 720µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 110 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 78 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 214 W
на замовлення 152 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+416.62 грн
10+ 359.97 грн
100+ 294.95 грн
BH1726NUC-E2 datasheet?p=BH1726NUC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BH1726NUC-E2
Виробник: Rohm Semiconductor
Description: SENSOR OPT AMBIENT WSON008X2120
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Output Type: I2C
Mounting Type: Surface Mount
Type: Ambient
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Supplier Device Package: WSON008X2120
Proximity Detection: No
Part Status: Active
товар відсутній
BU52792GWZ-E2 bu52792gwz-e
Виробник: Rohm Semiconductor
Description: OMNIPOLAR HALL IC INCORPORATING
товар відсутній
BH1726NUC-E2 datasheet?p=BH1726NUC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BH1726NUC-E2
Виробник: Rohm Semiconductor
Description: SENSOR OPT AMBIENT WSON008X2120
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Output Type: I2C
Mounting Type: Surface Mount
Type: Ambient
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Supplier Device Package: WSON008X2120
Proximity Detection: No
Part Status: Active
товар відсутній
BU52792GWZ-E2 bu52792gwz-e
Виробник: Rohm Semiconductor
Description: OMNIPOLAR HALL IC INCORPORATING
на замовлення 2715 шт:
термін постачання 21-31 дні (днів)
BU52792GWZ-E2 bu52792gwz-e
Виробник: Rohm Semiconductor
Description: OMNIPOLAR HALL IC INCORPORATING
на замовлення 2715 шт:
термін постачання 21-31 дні (днів)
ROHM-STEPMO_EVK_206 STEPMO_EVK_20x_Manual_REV1.3.pdf
ROHM-STEPMO_EVK_206
Виробник: Rohm Semiconductor
Description: BD63720A STEPMOTOR DRVR SHIELD
Packaging: Box
Function: Motor Controller/Driver, Stepper
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BD63720A
Platform: Arduino
Part Status: Active
товар відсутній
SCS230KE2AHRC
SCS230KE2AHRC
Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTTKY 1200V TO247
товар відсутній
SCS240KE2AHRC datasheet?p=SCS240KE2AHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCS240KE2AHRC
Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTTKY 1200V TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
товар відсутній
SCS310AMC scs310am-e.pdf
SCS310AMC
Виробник: Rohm Semiconductor
Description: SHORTER RECOVERY TIME, ENABLING
на замовлення 345 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+529.55 грн
10+ 457.77 грн
100+ 375.08 грн
SCS312AHGC9 datasheet?p=SCS312AH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCS312AHGC9
Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 650V 12A TO220ACP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 600pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220ACP
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
на замовлення 43 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+529.55 грн
10+ 460.78 грн
SCS315AHGC9 datasheet?p=SCS315AH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCS315AHGC9
Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 650V 15A TO220ACP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 750pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220ACP
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 75 µA @ 650 V
на замовлення 392 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+563.89 грн
50+ 433.02 грн
100+ 387.45 грн
SCS320AHGC9 datasheet?p=SCS320AH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCS320AHGC9
Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 650V 20A TO220ACP
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1000pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220ACP
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
на замовлення 510 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+701.24 грн
50+ 538.65 грн
100+ 481.96 грн
500+ 399.08 грн
SDR03EZPJ203 sdr-e.pdf
SDR03EZPJ203
Виробник: Rohm Semiconductor
Description: RES SMD 20 KOHM 5% 0.3W 0603
Packaging: Tape & Reel (TR)
Power (Watts): 0.3W
Tolerance: ±5%
Features: Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 20 kOhms
товар відсутній
SDR03EZPJ203 sdr-e.pdf
SDR03EZPJ203
Виробник: Rohm Semiconductor
Description: RES SMD 20 KOHM 5% 0.3W 0603
Packaging: Cut Tape (CT)
Power (Watts): 0.3W
Tolerance: ±5%
Features: Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 20 kOhms
на замовлення 1943 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
34+9.16 грн
73+ 4.04 грн
110+ 2.67 грн
130+ 2.12 грн
500+ 1.5 грн
1000+ 1.31 грн
Мінімальне замовлення: 34
R6003KND3TL1 datasheet?p=R6003KND3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6003KND3TL1
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 3A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 185 pF @ 25 V
товар відсутній
R6003KND3TL1 datasheet?p=R6003KND3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6003KND3TL1
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 3A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 185 pF @ 25 V
на замовлення 117 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+128.19 грн
10+ 110.58 грн
100+ 88.9 грн
Мінімальне замовлення: 3
2SA2088U3T106 datasheet?p=2SA2088U3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SA2088U3T106
Виробник: Rohm Semiconductor
Description: TRANS PNP 60V 0.5A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 200 mW
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+5.92 грн
6000+ 5.57 грн
9000+ 4.93 грн
Мінімальне замовлення: 3000
DTA113ZU3T106 datasheet?p=DTA113ZU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA113ZU3T106
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+2.36 грн
Мінімальне замовлення: 3000
DTA115EU3T106 dta115eu3t106-e.pdf
DTA115EU3T106
Виробник: Rohm Semiconductor
Description: DTA115EU3 IS AN DIGITAL TRANSIST
товар відсутній
DTA123EU3T106 datasheet?p=DTA123EU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA123EU3T106
Виробник: Rohm Semiconductor
Description: DTA123EU3 IS AN DIGITAL TRANSIST
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
товар відсутній
DTA123YU3T106 datasheet?p=DTA123YU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA123YU3T106
Виробник: Rohm Semiconductor
Description: DTA123YU3 IS AN DIGITAL TRANSIST
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
товар відсутній
DTC113ZU3T106 datasheet?p=DTC113ZU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC113ZU3T106
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+2.39 грн
Мінімальне замовлення: 3000
DTC115GU3T106 datasheet?p=DTC115GU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC115GU3T106
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Emitter Base (R2): 100 kOhms
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+2.33 грн
Мінімальне замовлення: 3000
DTC123YU3T106 datasheet?p=DTC123YU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC123YU3T106
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+2.39 грн
Мінімальне замовлення: 3000
DTC143EU3T106 datasheet?p=DTC143EU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC143EU3T106
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+2.38 грн
Мінімальне замовлення: 3000
DTC143XU3T106 datasheet?p=DTC143XU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC143XU3T106
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
товар відсутній
2SA2088U3T106 datasheet?p=2SA2088U3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SA2088U3T106
Виробник: Rohm Semiconductor
Description: TRANS PNP 60V 0.5A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 200 mW
на замовлення 10737 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
12+26.71 грн
17+ 18.3 грн
100+ 9.23 грн
500+ 7.68 грн
1000+ 5.98 грн
Мінімальне замовлення: 12
DTA113ZU3T106 datasheet?p=DTA113ZU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA113ZU3T106
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 10620 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
23+13.73 грн
32+ 9.26 грн
100+ 4.53 грн
500+ 3.54 грн
1000+ 2.46 грн
Мінімальне замовлення: 23
DTA115EU3T106 dta115eu3t106-e.pdf
DTA115EU3T106
Виробник: Rohm Semiconductor
Description: DTA115EU3 IS AN DIGITAL TRANSIST
на замовлення 2742 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
20+15.26 грн
25+ 12.12 грн
100+ 6.42 грн
500+ 3.96 грн
1000+ 2.7 грн
Мінімальне замовлення: 20
DTA123EU3T106 datasheet?p=DTA123EU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA123EU3T106
Виробник: Rohm Semiconductor
Description: DTA123EU3 IS AN DIGITAL TRANSIST
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
на замовлення 480 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
20+15.26 грн
25+ 12.2 грн
100+ 6.47 грн
Мінімальне замовлення: 20
DTA123YU3T106 datasheet?p=DTA123YU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA123YU3T106
Виробник: Rohm Semiconductor
Description: DTA123YU3 IS AN DIGITAL TRANSIST
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 410 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
20+15.26 грн
25+ 12.2 грн
100+ 6.47 грн
Мінімальне замовлення: 20
DTC113ZU3T106 datasheet?p=DTC113ZU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC113ZU3T106
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 3590 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
22+14.5 грн
32+ 9.41 грн
100+ 4.59 грн
500+ 3.59 грн
1000+ 2.49 грн
Мінімальне замовлення: 22
DTC115GU3T106 datasheet?p=DTC115GU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC115GU3T106
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Emitter Base (R2): 100 kOhms
на замовлення 5970 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
23+13.73 грн
32+ 9.18 грн
100+ 4.48 грн
500+ 3.5 грн
1000+ 2.43 грн
Мінімальне замовлення: 23
DTC123YU3T106 datasheet?p=DTC123YU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC123YU3T106
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 5845 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
22+14.5 грн
32+ 9.41 грн
100+ 4.59 грн
500+ 3.59 грн
1000+ 2.49 грн
Мінімальне замовлення: 22
DTC143EU3T106 datasheet?p=DTC143EU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC143EU3T106
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
на замовлення 8702 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
22+14.5 грн
32+ 9.41 грн
100+ 4.57 грн
500+ 3.57 грн
1000+ 2.48 грн
Мінімальне замовлення: 22
DTC143XU3T106 datasheet?p=DTC143XU3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC143XU3T106
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 2383 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
31+9.92 грн
45+ 6.61 грн
100+ 3.21 грн
500+ 2.51 грн
1000+ 1.75 грн
Мінімальне замовлення: 31
RS1P600BETB1 rs1p600betb1-e.pdf
RS1P600BETB1
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 100V 17.5A/60A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 17.5A, 10V
Power Dissipation (Max): 3W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: 8-HSOP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
товар відсутній
RS1P600BETB1 rs1p600betb1-e.pdf
RS1P600BETB1
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 100V 17.5A/60A 8HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 17.5A, 10V
Power Dissipation (Max): 3W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: 8-HSOP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
товар відсутній
R8002ANJFRGTL datasheet?p=R8002ANJFRG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R8002ANJFRGTL
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 800V 2A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
RSJ451N04FRATL rsj451n04fratl-e.pdf
RSJ451N04FRATL
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 40V 45A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 25A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
PDZVTFTR11B datasheet?p=PDZVTF11B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
PDZVTFTR11B
Виробник: Rohm Semiconductor
Description: DIODE ZENER 1165V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±5.91%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11.65 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: PMDTM
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 8 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+8.16 грн
Мінімальне замовлення: 3000
PDZVTFTR12B datasheet?p=PDZVTF12B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
PDZVTFTR12B
Виробник: Rohm Semiconductor
Description: DIODE ZENER 12.75V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±6.25%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12.75 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 9 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+6.61 грн
Мінімальне замовлення: 3000
PDZVTFTR13B datasheet?p=PDZVTF13B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
PDZVTFTR13B
Виробник: Rohm Semiconductor
Description: DIODE ZENER 14.15V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±6.54%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 14.15 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: PMDTM
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 10 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+8.16 грн
Мінімальне замовлення: 3000
PDZVTFTR16B
PDZVTFTR16B
Виробник: Rohm Semiconductor
Description: DIODE ZENER 17.25V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±6.56%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 17.25 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 12 V
товар відсутній
PDZVTFTR18B datasheet?p=PDZVTF18B&amp;dist=Digi-key&amp;media=referral&amp;source=digi-key.com&amp;campaign=Digi-key
PDZVTFTR18B
Виробник: Rohm Semiconductor
Description: DIODE ZENER 19.15V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±6.39%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 19.15 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 13 V
товар відсутній
PDZVTFTR2.4B datasheet?p=PDZVTF2.4B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
PDZVTFTR2.4B
Виробник: Rohm Semiconductor
Description: DIODE ZENER 2.55V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±6.25%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.55 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: PMDTM
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 200 µA @ 1 V
Qualification: AEC-Q101
товар відсутній
PDZVTFTR20B pdzvtftr20b-e
PDZVTFTR20B
Виробник: Rohm Semiconductor
Description: PDZVTF20B IS A ZENER DIODE WITH
товар відсутній
PDZVTFTR22B datasheet?p=PDZVTF22B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
PDZVTFTR22B
Виробник: Rohm Semiconductor
Description: DIODE ZENER 23.25V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±5.68%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 23.25 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 17 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+8.16 грн
Мінімальне замовлення: 3000
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