Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (100314) > Сторінка 1671 з 1672
| Фото | Назва | Виробник | Інформація |
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| BA82904YF-CE2 | ROHM SEMICONDUCTOR |
 Category: SMD operational amplifiersDescription: IC: operational amplifier Type of integrated circuit: operational amplifier Mounting: SMT |
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| BD5413EFV-E2 | ROHM SEMICONDUCTOR |
Category: RTV - audio integrated circuits Description: IC: audio amplifier Type of integrated circuit: audio amplifier |
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| BD52E42G-MTR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuits Description: IC: Supervisor Integrated Circuit; voltage detector; open drain Case: SSOP5 Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Manufacturer series: BD52 Active logical level: low Kind of RESET output: open drain Integrated circuit features: ±1% accuracy Threshold on-voltage: 4.2V Kind of integrated circuit: voltage detector Supply voltage: 950mV DC...10V DC Type of integrated circuit: Supervisor Integrated Circuit Number of channels: 1 |
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| BD52E42G-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuits Description: IC: Supervisor Integrated Circuit; voltage detector; open drain Case: VSOF5 Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Manufacturer series: BD52 Active logical level: low Kind of RESET output: open drain Integrated circuit features: ±1% accuracy Threshold on-voltage: 4.2V Kind of integrated circuit: voltage detector Supply voltage: 950mV DC...10V DC Type of integrated circuit: Supervisor Integrated Circuit Number of channels: 1 |
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| BU7486FVM-TR | ROHM SEMICONDUCTOR |
Category: SMD operational amplifiers Description: IC: operational amplifier Mounting: SMT Type of integrated circuit: operational amplifier |
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| BU7411G-TR | ROHM SEMICONDUCTOR |
Category: SMD operational amplifiers Description: IC: operational amplifier Type of integrated circuit: operational amplifier Mounting: SMT |
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| BU7411SG-TR | ROHM SEMICONDUCTOR |
Category: SMD operational amplifiers Description: IC: operational amplifier Type of integrated circuit: operational amplifier Mounting: SMT |
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| BR24G512F-3AGTE2 | ROHM SEMICONDUCTOR |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 512kbEEPROM; 2-wire,I2C; 64kx8bit; 1MHz; SOP8 Mounting: SMD Case: SOP8 Kind of package: reel; tape Operating temperature: -40...85°C Type of integrated circuit: EEPROM memory Interface: 2-wire; I2C Kind of memory: EEPROM Memory organisation: 64kx8bit Access time: 5ms Clock frequency: 1MHz Supply voltage: 1.7...5.5V DC Kind of interface: serial Memory: 512kb EEPROM |
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| BR24G512FJ-3AGTE2 | ROHM SEMICONDUCTOR |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 512kbEEPROM; 2-wire,I2C; 64kx8bit; 1MHz; SOP-J8 Mounting: SMD Operating temperature: -40...85°C Case: SOP-J8 Clock frequency: 1MHz Interface: 2-wire; I2C Type of integrated circuit: EEPROM memory Kind of package: reel; tape Supply voltage: 1.7...5.5V DC Kind of interface: serial Kind of memory: EEPROM Memory: 512kb EEPROM Memory organisation: 64kx8bit Access time: 5ms |
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| BR25G512F-3GE2 | ROHM SEMICONDUCTOR |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 10MHz; SOP8; serial Mounting: SMD Case: SOP8 Kind of package: reel; tape Operating temperature: -40...85°C Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Memory organisation: 64kx8bit Access time: 5ms Clock frequency: 10MHz Supply voltage: 1.8...5.5V DC Kind of interface: serial Memory: 512kb EEPROM |
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| BR25G512FJ-3GE2 | ROHM SEMICONDUCTOR |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 10MHz; SOP-J8 Mounting: SMD Operating temperature: -40...85°C Case: SOP-J8 Clock frequency: 10MHz Interface: SPI Type of integrated circuit: EEPROM memory Kind of package: reel; tape Supply voltage: 1.8...5.5V DC Kind of interface: serial Kind of memory: EEPROM Memory: 512kb EEPROM Memory organisation: 64kx8bit Access time: 5ms |
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| BR25G512FJ-5AE2 | ROHM SEMICONDUCTOR |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 20MHz; SOP8; serial Mounting: SMD Operating temperature: -40...85°C Case: SOP8 Clock frequency: 20MHz Interface: SPI Type of integrated circuit: EEPROM memory Kind of package: reel; tape Supply voltage: 1.6...5.5V DC Kind of interface: serial Kind of memory: EEPROM Memory: 512kb EEPROM Memory organisation: 64kx8bit Access time: 3.5ms |
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| BR25G512FVT-3GE2 | ROHM SEMICONDUCTOR |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 10MHz; TSSOP-B8 Mounting: SMD Case: TSSOP-B8 Kind of package: reel; tape Operating temperature: -40...85°C Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Memory organisation: 64kx8bit Access time: 5ms Clock frequency: 10MHz Supply voltage: 1.8...5.5V DC Kind of interface: serial Memory: 512kb EEPROM |
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| BD2242G-GTR | ROHM SEMICONDUCTOR |
Category: Power switches - integrated circuits Description: IC: power switch; SMD Mounting: SMD Type of integrated circuit: power switch |
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| BD2243G-GTR | ROHM SEMICONDUCTOR |
Category: Power switches - integrated circuits Description: IC: power switch; SMD Mounting: SMD Type of integrated circuit: power switch |
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| BD2244G-MGTR | ROHM SEMICONDUCTOR |
Category: Power switches - integrated circuits Description: IC: power switch; SMD Mounting: SMD Type of integrated circuit: power switch |
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| BD2245G-MGTR | ROHM SEMICONDUCTOR |
Category: Power switches - integrated circuits Description: IC: power switch; SMD Mounting: SMD Type of integrated circuit: power switch |
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| BD2247G-GTR | ROHM SEMICONDUCTOR |
Category: Power switches - integrated circuits Description: IC: power switch; SMD Mounting: SMD Type of integrated circuit: power switch |
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| BD88410GUL-E2 | ROHM SEMICONDUCTOR |
Category: RTV - audio integrated circuits Description: IC: audio amplifier; headphone driver Type of integrated circuit: audio amplifier Integrated circuit features: headphone driver |
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| BD88415GUL-E2 | ROHM SEMICONDUCTOR |
Category: RTV - audio integrated circuits Description: IC: audio amplifier; headphone driver Type of integrated circuit: audio amplifier Integrated circuit features: headphone driver |
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| RQ3G100GNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 27A; Idm: 40A; 15W; HSMT8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 27A Pulsed drain current: 40A Power dissipation: 15W Case: HSMT8 Gate-source voltage: ±20V On-state resistance: 18.3mΩ Mounting: SMD Gate charge: 8.4nC Kind of package: reel; tape Kind of channel: enhanced |
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| UMG1NTR | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88A,SOT353 Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC88A; SOT353 Current gain: 56 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Base-emitter resistor: 22kΩ |
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| EMG11T2R | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT553; R1: 2.2kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT553 Current gain: 80 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ |
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| RSJ400N06FRATL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 40A; Idm: 80A; 50W; D2PAK Kind of package: reel; tape Drain-source voltage: 60V Drain current: 40A On-state resistance: 16mΩ Type of transistor: N-MOSFET Power dissipation: 50W Polarisation: unipolar Gate charge: 52nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 80A Mounting: SMD Case: D2PAK |
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| BR24T512FJ-3AME2 | ROHM SEMICONDUCTOR |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 512kbEEPROM; 2-wire,I2C; 64kx8bit; 1MHz; SOP-J8 Mounting: SMD Operating temperature: -40...85°C Case: SOP-J8 Clock frequency: 1MHz Interface: 2-wire; I2C Type of integrated circuit: EEPROM memory Kind of package: reel; tape Supply voltage: 1.7...5.5V DC Kind of interface: serial Kind of memory: EEPROM Memory: 512kb EEPROM Memory organisation: 64kx8bit Access time: 5ms |
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RB521SM-60FHT2R | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 0.2A; SC79,SOD523; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 0.2A Semiconductor structure: single diode Case: SC79; SOD523 Max. forward voltage: 0.6V Leakage current: 0.1mA Max. forward impulse current: 1A Kind of package: reel; tape |
на замовлення 8875 шт: термін постачання 21-30 дні (днів) |
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RB521SM-30T2R | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SC79,SOD523; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Case: SC79; SOD523 Max. forward voltage: 0.47V Leakage current: 30µA Max. forward impulse current: 1A Kind of package: reel; tape |
на замовлення 8769 шт: термін постачання 21-30 дні (днів) |
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RB521SM-40T2R | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 0.2A; SC79,SOD523; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: single diode Case: SC79; SOD523 Max. forward voltage: 0.54V Leakage current: 90µA Max. forward impulse current: 1A Kind of package: reel; tape |
на замовлення 7500 шт: термін постачання 21-30 дні (днів) |
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RB521SM-60T2R | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 0.2A; SC79,SOD523; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 0.2A Semiconductor structure: single diode Case: SC79; SOD523 Max. forward voltage: 0.6V Leakage current: 0.1mA Max. forward impulse current: 1A Kind of package: reel; tape |
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RB521SM-40FHT2R | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 0.2A; SC79,SOD523; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: single diode Case: SC79; SOD523 Max. forward voltage: 0.54V Leakage current: 90µA Max. forward impulse current: 1A Kind of package: reel; tape |
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RB521SM-30FHT2R | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SC79,SOD523; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Case: SC79; SOD523 Max. forward voltage: 0.47V Leakage current: 30µA Max. forward impulse current: 1A Kind of package: reel; tape |
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SML-E12U8WT86 | ROHM SEMICONDUCTOR |
Category: SMD colour LEDs Description: LED; SMD; 0603; red; 25÷63mcd; 1.6x0.8x0.55mm; 2.2V; 20mA; 54mW LED colour: red Case: 0603 Wavelength: 615...625nm Operating voltage: 2.2V Luminosity: 25...63mcd Mounting: SMD Power: 54mW Front: flat Type of diode: LED LED lens: diffused; white LED current: 20mA Dimensions: 1.6x0.8x0.55mm |
на замовлення 50 шт: термін постачання 21-30 дні (днів) |
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SML-E12Y8WT86 | ROHM SEMICONDUCTOR |
Category: SMD colour LEDs Description: LED; SMD; 0603; yellow; 25÷63mcd; 1.6x0.8x0.55mm; 2.2V; 20mA; 54mW LED colour: yellow Case: 0603 Wavelength: 587...593nm Operating voltage: 2.2V Luminosity: 25...63mcd Mounting: SMD Power: 54mW Front: flat Type of diode: LED LED lens: diffused; white LED current: 20mA Dimensions: 1.6x0.8x0.55mm |
на замовлення 3270 шт: термін постачання 21-30 дні (днів) |
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SML-E12M8WT86 | ROHM SEMICONDUCTOR |
Category: SMD colour LEDs Description: LED; SMD; 0603; yellow green; 10÷25mcd; 1.6x0.8x0.36mm; 2.2V; 20mA LED colour: yellow green Case: 0603 Wavelength: 569...575nm Operating voltage: 2.2V Luminosity: 10...25mcd Mounting: SMD Manufacturer series: EXCELED™ Power: 54mW Front: flat Type of diode: LED LED lens: transparent LED current: 20mA Dimensions: 1.6x0.8x0.36mm |
на замовлення 3380 шт: термін постачання 21-30 дні (днів) |
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SML-D12Y8WT86 | ROHM SEMICONDUCTOR |
Category: SMD colour LEDs Description: LED; SMD; 0603; yellow; 25÷63mcd; 1.6x0.8x0.55mm; 2.2V; 20mA; 54mW LED colour: yellow Case: 0603 Wavelength: 587...593nm Operating voltage: 2.2V Luminosity: 25...63mcd Mounting: SMD Manufacturer series: EXCELED™ Power: 54mW Front: flat Type of diode: LED LED lens: transparent LED current: 20mA Dimensions: 1.6x0.8x0.55mm |
на замовлення 373 шт: термін постачання 21-30 дні (днів) |
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SML-E12D8WT86 | ROHM SEMICONDUCTOR |
Category: SMD colour LEDs Description: LED; SMD; 0603; orange; 40÷100mcd; 1.6x0.8x0.36mm; 2.2V; 20mA; 54mW LED colour: orange Case: 0603 Wavelength: 602...608nm Operating voltage: 2.2V Luminosity: 40...100mcd Mounting: SMD Manufacturer series: EXCELED™ Power: 54mW Front: flat Type of diode: LED LED lens: transparent LED current: 20mA Dimensions: 1.6x0.8x0.36mm |
на замовлення 382 шт: термін постачання 21-30 дні (днів) |
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| BD52E28G-MTR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuits Description: IC: Supervisor Integrated Circuit; voltage detector; open drain Case: SSOP5 Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Manufacturer series: BD52 Active logical level: low Kind of RESET output: open drain Integrated circuit features: ±1% accuracy Threshold on-voltage: 2.8V Kind of integrated circuit: voltage detector Supply voltage: 950mV DC...10V DC Type of integrated circuit: Supervisor Integrated Circuit Number of channels: 1 |
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| BD52E33G-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuits Description: IC: Supervisor Integrated Circuit; voltage detector; open drain Case: SSOP5 Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Manufacturer series: BD52 Active logical level: low Kind of RESET output: open drain Integrated circuit features: ±1% accuracy Threshold on-voltage: 3.3V Kind of integrated circuit: voltage detector Supply voltage: 950mV DC...10V DC Type of integrated circuit: Supervisor Integrated Circuit Number of channels: 1 |
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| BD52E45G-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuits Description: IC: Supervisor Integrated Circuit; voltage detector; open drain Case: SSOP5 Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Manufacturer series: BD52 Active logical level: low Kind of RESET output: open drain Integrated circuit features: ±1% accuracy Threshold on-voltage: 4.5V Kind of integrated circuit: voltage detector Supply voltage: 950mV DC...10V DC Type of integrated circuit: Supervisor Integrated Circuit Number of channels: 1 |
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| LM4565FJ-GE2 | ROHM SEMICONDUCTOR |
Category: SMD operational amplifiers Description: IC: operational amplifier Mounting: SMT Type of integrated circuit: operational amplifier |
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| LM4565F-GE2 | ROHM SEMICONDUCTOR |
Category: SMD operational amplifiers Description: IC: operational amplifier Mounting: SMT Type of integrated circuit: operational amplifier |
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| LM4565FV-GE2 | ROHM SEMICONDUCTOR |
Category: SMD operational amplifiers Description: IC: operational amplifier Mounting: SMT Type of integrated circuit: operational amplifier |
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| LM4565FVJ-GE2 | ROHM SEMICONDUCTOR |
Category: SMD operational amplifiers Description: IC: operational amplifier Mounting: SMT Type of integrated circuit: operational amplifier |
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| LM4565FVM-GTR | ROHM SEMICONDUCTOR |
Category: SMD operational amplifiers Description: IC: operational amplifier Mounting: SMT Type of integrated circuit: operational amplifier |
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| RQ5P010SNTL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1A; Idm: 4A; 1W; TSMT3 On-state resistance: 0.58Ω Type of transistor: N-MOSFET Power dissipation: 1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 3.5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 4A Mounting: SMD Case: TSMT3 Drain-source voltage: 100V Drain current: 1A |
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| RQ5A030APTL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -3A; Idm: -9A; 1W; TSMT3 On-state resistance: 0.18Ω Type of transistor: P-MOSFET Power dissipation: 1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 16nC Kind of channel: enhanced Pulsed drain current: -9A Mounting: SMD Case: TSMT3 Drain-source voltage: -12V Drain current: -3A |
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| RQ5A040ZPTL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -4A; Idm: -16A; 1W; TSMT3 On-state resistance: 0.11Ω Type of transistor: P-MOSFET Power dissipation: 1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 30nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: -16A Mounting: SMD Case: TSMT3 Drain-source voltage: -12V Drain current: -4A |
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| RQ5E015RPTL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; Idm: -6A; 1W; TSMT3 On-state resistance: 0.27Ω Type of transistor: P-MOSFET Power dissipation: 1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 3.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -6A Mounting: SMD Case: TSMT3 Drain-source voltage: -30V Drain current: -1.5A |
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| RQ5E025TNTL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 1W; TSMT3 On-state resistance: 0.133Ω Type of transistor: N-MOSFET Power dissipation: 1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 3.3nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 10A Mounting: SMD Case: TSMT3 Drain-source voltage: 30V Drain current: 2.5A |
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| RQ5E040TNTL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 16A; 1W; TSMT3 On-state resistance: 66mΩ Type of transistor: N-MOSFET Power dissipation: 1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 5.9nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 16A Mounting: SMD Case: TSMT3 Drain-source voltage: 30V Drain current: 4A |
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| RQ5H020TNTL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 45V; 2A; Idm: 8A; 1W; TSMT3 On-state resistance: 0.25Ω Type of transistor: N-MOSFET Power dissipation: 1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 2.9nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 8A Mounting: SMD Case: TSMT3 Drain-source voltage: 45V Drain current: 2A |
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| RQ5H025TNTL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 45V; 2.5A; Idm: 10A; 1W; TSMT3 On-state resistance: 0.175Ω Type of transistor: N-MOSFET Power dissipation: 1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 3.2nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 10A Mounting: SMD Case: TSMT3 Drain-source voltage: 45V Drain current: 2.5A |
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| RQ5L020SNTL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 1W; TSMT3 On-state resistance: 0.21Ω Type of transistor: N-MOSFET Power dissipation: 1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 2.7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 8A Mounting: SMD Case: TSMT3 Drain-source voltage: 60V Drain current: 2A |
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RUM001L02T2CL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 0.1A; Idm: 0.4A; 150mW; SOT723 Power dissipation: 0.15W Mounting: SMD Kind of package: reel; tape Case: SOT723 Features of semiconductor devices: ESD protected gate Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 0.4A Drain-source voltage: 20V Drain current: 0.1A On-state resistance: 3.5Ω Type of transistor: N-MOSFET |
на замовлення 16140 шт: термін постачання 21-30 дні (днів) |
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| LM4559FJ-GE2 | ROHM SEMICONDUCTOR |
Category: SMD operational amplifiers Description: IC: operational amplifier Mounting: SMT Type of integrated circuit: operational amplifier |
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| LM4559FVT-GE2 | ROHM SEMICONDUCTOR |
Category: SMD operational amplifiers Description: IC: operational amplifier Mounting: SMT Type of integrated circuit: operational amplifier |
товар відсутній |
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UDZVTE-1715B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 15V; SMD; reel,tape; SC90A,SOD323F; 100nA Type of diode: Zener Power dissipation: 0.2W Zener voltage: 15V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SC90A; SOD323F Semiconductor structure: single diode Leakage current: 0.1µA |
на замовлення 1225 шт: термін постачання 21-30 дні (днів) |
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KDZVTR8.2B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 8.2V; SMD; reel,tape; SOD123F; single diode; 20uA Type of diode: Zener Power dissipation: 1W Zener voltage: 8.2V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 20µA |
на замовлення 2981 шт: термін постачання 21-30 дні (днів) |
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| TFZVTR8.2B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 500mW; 8.2V; SMD; reel,tape; SOD323HE; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 8.2V Mounting: SMD Kind of package: reel; tape Case: SOD323HE Semiconductor structure: single diode Leakage current: 0.5µA |
товар відсутній |
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| YFZVFHTR8.2B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 500mW; 8.2V; SMD; reel,tape; SOD323HE; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 8.2V Mounting: SMD Kind of package: reel; tape Case: SOD323HE Semiconductor structure: single diode Leakage current: 0.5µA |
товар відсутній |
| BA82904YF-CE2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD operational amplifiers
Description: IC: operational amplifier
Type of integrated circuit: operational amplifier
Mounting: SMT
Category: SMD operational amplifiers
Description: IC: operational amplifier
Type of integrated circuit: operational amplifier
Mounting: SMT
товар відсутній
| BD5413EFV-E2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: RTV - audio integrated circuits
Description: IC: audio amplifier
Type of integrated circuit: audio amplifier
Category: RTV - audio integrated circuits
Description: IC: audio amplifier
Type of integrated circuit: audio amplifier
товар відсутній
| BD52E42G-MTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; voltage detector; open drain
Case: SSOP5
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Manufacturer series: BD52
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1% accuracy
Threshold on-voltage: 4.2V
Kind of integrated circuit: voltage detector
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: Supervisor Integrated Circuit
Number of channels: 1
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; voltage detector; open drain
Case: SSOP5
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Manufacturer series: BD52
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1% accuracy
Threshold on-voltage: 4.2V
Kind of integrated circuit: voltage detector
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: Supervisor Integrated Circuit
Number of channels: 1
товар відсутній
| BD52E42G-TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; voltage detector; open drain
Case: VSOF5
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Manufacturer series: BD52
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1% accuracy
Threshold on-voltage: 4.2V
Kind of integrated circuit: voltage detector
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: Supervisor Integrated Circuit
Number of channels: 1
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; voltage detector; open drain
Case: VSOF5
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Manufacturer series: BD52
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1% accuracy
Threshold on-voltage: 4.2V
Kind of integrated circuit: voltage detector
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: Supervisor Integrated Circuit
Number of channels: 1
товар відсутній
| BU7486FVM-TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD operational amplifiers
Description: IC: operational amplifier
Mounting: SMT
Type of integrated circuit: operational amplifier
Category: SMD operational amplifiers
Description: IC: operational amplifier
Mounting: SMT
Type of integrated circuit: operational amplifier
товар відсутній
| BU7411G-TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD operational amplifiers
Description: IC: operational amplifier
Type of integrated circuit: operational amplifier
Mounting: SMT
Category: SMD operational amplifiers
Description: IC: operational amplifier
Type of integrated circuit: operational amplifier
Mounting: SMT
товар відсутній
| BU7411SG-TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD operational amplifiers
Description: IC: operational amplifier
Type of integrated circuit: operational amplifier
Mounting: SMT
Category: SMD operational amplifiers
Description: IC: operational amplifier
Type of integrated circuit: operational amplifier
Mounting: SMT
товар відсутній
| BR24G512F-3AGTE2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; 2-wire,I2C; 64kx8bit; 1MHz; SOP8
Mounting: SMD
Case: SOP8
Kind of package: reel; tape
Operating temperature: -40...85°C
Type of integrated circuit: EEPROM memory
Interface: 2-wire; I2C
Kind of memory: EEPROM
Memory organisation: 64kx8bit
Access time: 5ms
Clock frequency: 1MHz
Supply voltage: 1.7...5.5V DC
Kind of interface: serial
Memory: 512kb EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; 2-wire,I2C; 64kx8bit; 1MHz; SOP8
Mounting: SMD
Case: SOP8
Kind of package: reel; tape
Operating temperature: -40...85°C
Type of integrated circuit: EEPROM memory
Interface: 2-wire; I2C
Kind of memory: EEPROM
Memory organisation: 64kx8bit
Access time: 5ms
Clock frequency: 1MHz
Supply voltage: 1.7...5.5V DC
Kind of interface: serial
Memory: 512kb EEPROM
товар відсутній
| BR24G512FJ-3AGTE2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; 2-wire,I2C; 64kx8bit; 1MHz; SOP-J8
Mounting: SMD
Operating temperature: -40...85°C
Case: SOP-J8
Clock frequency: 1MHz
Interface: 2-wire; I2C
Type of integrated circuit: EEPROM memory
Kind of package: reel; tape
Supply voltage: 1.7...5.5V DC
Kind of interface: serial
Kind of memory: EEPROM
Memory: 512kb EEPROM
Memory organisation: 64kx8bit
Access time: 5ms
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; 2-wire,I2C; 64kx8bit; 1MHz; SOP-J8
Mounting: SMD
Operating temperature: -40...85°C
Case: SOP-J8
Clock frequency: 1MHz
Interface: 2-wire; I2C
Type of integrated circuit: EEPROM memory
Kind of package: reel; tape
Supply voltage: 1.7...5.5V DC
Kind of interface: serial
Kind of memory: EEPROM
Memory: 512kb EEPROM
Memory organisation: 64kx8bit
Access time: 5ms
товар відсутній
| BR25G512F-3GE2 |
Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 10MHz; SOP8; serial
Mounting: SMD
Case: SOP8
Kind of package: reel; tape
Operating temperature: -40...85°C
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 64kx8bit
Access time: 5ms
Clock frequency: 10MHz
Supply voltage: 1.8...5.5V DC
Kind of interface: serial
Memory: 512kb EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 10MHz; SOP8; serial
Mounting: SMD
Case: SOP8
Kind of package: reel; tape
Operating temperature: -40...85°C
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 64kx8bit
Access time: 5ms
Clock frequency: 10MHz
Supply voltage: 1.8...5.5V DC
Kind of interface: serial
Memory: 512kb EEPROM
товар відсутній
| BR25G512FJ-3GE2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 10MHz; SOP-J8
Mounting: SMD
Operating temperature: -40...85°C
Case: SOP-J8
Clock frequency: 10MHz
Interface: SPI
Type of integrated circuit: EEPROM memory
Kind of package: reel; tape
Supply voltage: 1.8...5.5V DC
Kind of interface: serial
Kind of memory: EEPROM
Memory: 512kb EEPROM
Memory organisation: 64kx8bit
Access time: 5ms
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 10MHz; SOP-J8
Mounting: SMD
Operating temperature: -40...85°C
Case: SOP-J8
Clock frequency: 10MHz
Interface: SPI
Type of integrated circuit: EEPROM memory
Kind of package: reel; tape
Supply voltage: 1.8...5.5V DC
Kind of interface: serial
Kind of memory: EEPROM
Memory: 512kb EEPROM
Memory organisation: 64kx8bit
Access time: 5ms
товар відсутній
| BR25G512FJ-5AE2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 20MHz; SOP8; serial
Mounting: SMD
Operating temperature: -40...85°C
Case: SOP8
Clock frequency: 20MHz
Interface: SPI
Type of integrated circuit: EEPROM memory
Kind of package: reel; tape
Supply voltage: 1.6...5.5V DC
Kind of interface: serial
Kind of memory: EEPROM
Memory: 512kb EEPROM
Memory organisation: 64kx8bit
Access time: 3.5ms
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 20MHz; SOP8; serial
Mounting: SMD
Operating temperature: -40...85°C
Case: SOP8
Clock frequency: 20MHz
Interface: SPI
Type of integrated circuit: EEPROM memory
Kind of package: reel; tape
Supply voltage: 1.6...5.5V DC
Kind of interface: serial
Kind of memory: EEPROM
Memory: 512kb EEPROM
Memory organisation: 64kx8bit
Access time: 3.5ms
товар відсутній
| BR25G512FVT-3GE2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 10MHz; TSSOP-B8
Mounting: SMD
Case: TSSOP-B8
Kind of package: reel; tape
Operating temperature: -40...85°C
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 64kx8bit
Access time: 5ms
Clock frequency: 10MHz
Supply voltage: 1.8...5.5V DC
Kind of interface: serial
Memory: 512kb EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 10MHz; TSSOP-B8
Mounting: SMD
Case: TSSOP-B8
Kind of package: reel; tape
Operating temperature: -40...85°C
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 64kx8bit
Access time: 5ms
Clock frequency: 10MHz
Supply voltage: 1.8...5.5V DC
Kind of interface: serial
Memory: 512kb EEPROM
товар відсутній
| BD2242G-GTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Power switches - integrated circuits
Description: IC: power switch; SMD
Mounting: SMD
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch; SMD
Mounting: SMD
Type of integrated circuit: power switch
товар відсутній
| BD2243G-GTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Power switches - integrated circuits
Description: IC: power switch; SMD
Mounting: SMD
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch; SMD
Mounting: SMD
Type of integrated circuit: power switch
товар відсутній
| BD2244G-MGTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Power switches - integrated circuits
Description: IC: power switch; SMD
Mounting: SMD
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch; SMD
Mounting: SMD
Type of integrated circuit: power switch
товар відсутній
| BD2245G-MGTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Power switches - integrated circuits
Description: IC: power switch; SMD
Mounting: SMD
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch; SMD
Mounting: SMD
Type of integrated circuit: power switch
товар відсутній
| BD2247G-GTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Power switches - integrated circuits
Description: IC: power switch; SMD
Mounting: SMD
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch; SMD
Mounting: SMD
Type of integrated circuit: power switch
товар відсутній
| BD88410GUL-E2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; headphone driver
Type of integrated circuit: audio amplifier
Integrated circuit features: headphone driver
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; headphone driver
Type of integrated circuit: audio amplifier
Integrated circuit features: headphone driver
товар відсутній
| BD88415GUL-E2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; headphone driver
Type of integrated circuit: audio amplifier
Integrated circuit features: headphone driver
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; headphone driver
Type of integrated circuit: audio amplifier
Integrated circuit features: headphone driver
товар відсутній
| RQ3G100GNTB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 27A; Idm: 40A; 15W; HSMT8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 27A
Pulsed drain current: 40A
Power dissipation: 15W
Case: HSMT8
Gate-source voltage: ±20V
On-state resistance: 18.3mΩ
Mounting: SMD
Gate charge: 8.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 27A; Idm: 40A; 15W; HSMT8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 27A
Pulsed drain current: 40A
Power dissipation: 15W
Case: HSMT8
Gate-source voltage: ±20V
On-state resistance: 18.3mΩ
Mounting: SMD
Gate charge: 8.4nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| UMG1NTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88A,SOT353
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC88A; SOT353
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88A,SOT353
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC88A; SOT353
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
товар відсутній
| EMG11T2R |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT553; R1: 2.2kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT553
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT553; R1: 2.2kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT553
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
товар відсутній
| RSJ400N06FRATL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; Idm: 80A; 50W; D2PAK
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 40A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Gate charge: 52nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Mounting: SMD
Case: D2PAK
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; Idm: 80A; 50W; D2PAK
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 40A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Gate charge: 52nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Mounting: SMD
Case: D2PAK
товар відсутній
| BR24T512FJ-3AME2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; 2-wire,I2C; 64kx8bit; 1MHz; SOP-J8
Mounting: SMD
Operating temperature: -40...85°C
Case: SOP-J8
Clock frequency: 1MHz
Interface: 2-wire; I2C
Type of integrated circuit: EEPROM memory
Kind of package: reel; tape
Supply voltage: 1.7...5.5V DC
Kind of interface: serial
Kind of memory: EEPROM
Memory: 512kb EEPROM
Memory organisation: 64kx8bit
Access time: 5ms
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; 2-wire,I2C; 64kx8bit; 1MHz; SOP-J8
Mounting: SMD
Operating temperature: -40...85°C
Case: SOP-J8
Clock frequency: 1MHz
Interface: 2-wire; I2C
Type of integrated circuit: EEPROM memory
Kind of package: reel; tape
Supply voltage: 1.7...5.5V DC
Kind of interface: serial
Kind of memory: EEPROM
Memory: 512kb EEPROM
Memory organisation: 64kx8bit
Access time: 5ms
товар відсутній
| RB521SM-60FHT2R |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 0.2A; SC79,SOD523; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 0.2A
Semiconductor structure: single diode
Case: SC79; SOD523
Max. forward voltage: 0.6V
Leakage current: 0.1mA
Max. forward impulse current: 1A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 0.2A; SC79,SOD523; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 0.2A
Semiconductor structure: single diode
Case: SC79; SOD523
Max. forward voltage: 0.6V
Leakage current: 0.1mA
Max. forward impulse current: 1A
Kind of package: reel; tape
на замовлення 8875 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 54+ | 7.59 грн |
| 71+ | 5.32 грн |
| 86+ | 4.41 грн |
| 102+ | 3.7 грн |
| 495+ | 1.77 грн |
| 1359+ | 1.68 грн |
| 8000+ | 1.61 грн |
| RB521SM-30T2R |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SC79,SOD523; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Case: SC79; SOD523
Max. forward voltage: 0.47V
Leakage current: 30µA
Max. forward impulse current: 1A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SC79,SOD523; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Case: SC79; SOD523
Max. forward voltage: 0.47V
Leakage current: 30µA
Max. forward impulse current: 1A
Kind of package: reel; tape
на замовлення 8769 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 175+ | 2.58 грн |
| 225+ | 1.84 грн |
| 500+ | 1.63 грн |
| 625+ | 1.44 грн |
| 1675+ | 1.36 грн |
| RB521SM-40T2R |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.2A; SC79,SOD523; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Case: SC79; SOD523
Max. forward voltage: 0.54V
Leakage current: 90µA
Max. forward impulse current: 1A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.2A; SC79,SOD523; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Case: SC79; SOD523
Max. forward voltage: 0.54V
Leakage current: 90µA
Max. forward impulse current: 1A
Kind of package: reel; tape
на замовлення 7500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 62+ | 6.59 грн |
| 81+ | 4.65 грн |
| 102+ | 3.69 грн |
| 157+ | 2.4 грн |
| 200+ | 2.03 грн |
| 500+ | 1.78 грн |
| 565+ | 1.55 грн |
| 1554+ | 1.47 грн |
| RB521SM-60T2R |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 0.2A; SC79,SOD523; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 0.2A
Semiconductor structure: single diode
Case: SC79; SOD523
Max. forward voltage: 0.6V
Leakage current: 0.1mA
Max. forward impulse current: 1A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 0.2A; SC79,SOD523; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 0.2A
Semiconductor structure: single diode
Case: SC79; SOD523
Max. forward voltage: 0.6V
Leakage current: 0.1mA
Max. forward impulse current: 1A
Kind of package: reel; tape
товар відсутній
| RB521SM-40FHT2R |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.2A; SC79,SOD523; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Case: SC79; SOD523
Max. forward voltage: 0.54V
Leakage current: 90µA
Max. forward impulse current: 1A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.2A; SC79,SOD523; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Case: SC79; SOD523
Max. forward voltage: 0.54V
Leakage current: 90µA
Max. forward impulse current: 1A
Kind of package: reel; tape
товар відсутній
| RB521SM-30FHT2R |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SC79,SOD523; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Case: SC79; SOD523
Max. forward voltage: 0.47V
Leakage current: 30µA
Max. forward impulse current: 1A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SC79,SOD523; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Case: SC79; SOD523
Max. forward voltage: 0.47V
Leakage current: 30µA
Max. forward impulse current: 1A
Kind of package: reel; tape
товар відсутній
| SML-E12U8WT86 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; SMD; 0603; red; 25÷63mcd; 1.6x0.8x0.55mm; 2.2V; 20mA; 54mW
LED colour: red
Case: 0603
Wavelength: 615...625nm
Operating voltage: 2.2V
Luminosity: 25...63mcd
Mounting: SMD
Power: 54mW
Front: flat
Type of diode: LED
LED lens: diffused; white
LED current: 20mA
Dimensions: 1.6x0.8x0.55mm
Category: SMD colour LEDs
Description: LED; SMD; 0603; red; 25÷63mcd; 1.6x0.8x0.55mm; 2.2V; 20mA; 54mW
LED colour: red
Case: 0603
Wavelength: 615...625nm
Operating voltage: 2.2V
Luminosity: 25...63mcd
Mounting: SMD
Power: 54mW
Front: flat
Type of diode: LED
LED lens: diffused; white
LED current: 20mA
Dimensions: 1.6x0.8x0.55mm
на замовлення 50 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 18.56 грн |
| 27+ | 14.31 грн |
| 33+ | 11.63 грн |
| SML-E12Y8WT86 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; SMD; 0603; yellow; 25÷63mcd; 1.6x0.8x0.55mm; 2.2V; 20mA; 54mW
LED colour: yellow
Case: 0603
Wavelength: 587...593nm
Operating voltage: 2.2V
Luminosity: 25...63mcd
Mounting: SMD
Power: 54mW
Front: flat
Type of diode: LED
LED lens: diffused; white
LED current: 20mA
Dimensions: 1.6x0.8x0.55mm
Category: SMD colour LEDs
Description: LED; SMD; 0603; yellow; 25÷63mcd; 1.6x0.8x0.55mm; 2.2V; 20mA; 54mW
LED colour: yellow
Case: 0603
Wavelength: 587...593nm
Operating voltage: 2.2V
Luminosity: 25...63mcd
Mounting: SMD
Power: 54mW
Front: flat
Type of diode: LED
LED lens: diffused; white
LED current: 20mA
Dimensions: 1.6x0.8x0.55mm
на замовлення 3270 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 14.52 грн |
| 39+ | 9.74 грн |
| 100+ | 5.72 грн |
| 255+ | 3.43 грн |
| 701+ | 3.24 грн |
| SML-E12M8WT86 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; SMD; 0603; yellow green; 10÷25mcd; 1.6x0.8x0.36mm; 2.2V; 20mA
LED colour: yellow green
Case: 0603
Wavelength: 569...575nm
Operating voltage: 2.2V
Luminosity: 10...25mcd
Mounting: SMD
Manufacturer series: EXCELED™
Power: 54mW
Front: flat
Type of diode: LED
LED lens: transparent
LED current: 20mA
Dimensions: 1.6x0.8x0.36mm
Category: SMD colour LEDs
Description: LED; SMD; 0603; yellow green; 10÷25mcd; 1.6x0.8x0.36mm; 2.2V; 20mA
LED colour: yellow green
Case: 0603
Wavelength: 569...575nm
Operating voltage: 2.2V
Luminosity: 10...25mcd
Mounting: SMD
Manufacturer series: EXCELED™
Power: 54mW
Front: flat
Type of diode: LED
LED lens: transparent
LED current: 20mA
Dimensions: 1.6x0.8x0.36mm
на замовлення 3380 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 23.4 грн |
| 22+ | 17.53 грн |
| 28+ | 13.61 грн |
| 50+ | 10.46 грн |
| 100+ | 7.83 грн |
| 203+ | 4.32 грн |
| 557+ | 4.09 грн |
| SML-D12Y8WT86 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; SMD; 0603; yellow; 25÷63mcd; 1.6x0.8x0.55mm; 2.2V; 20mA; 54mW
LED colour: yellow
Case: 0603
Wavelength: 587...593nm
Operating voltage: 2.2V
Luminosity: 25...63mcd
Mounting: SMD
Manufacturer series: EXCELED™
Power: 54mW
Front: flat
Type of diode: LED
LED lens: transparent
LED current: 20mA
Dimensions: 1.6x0.8x0.55mm
Category: SMD colour LEDs
Description: LED; SMD; 0603; yellow; 25÷63mcd; 1.6x0.8x0.55mm; 2.2V; 20mA; 54mW
LED colour: yellow
Case: 0603
Wavelength: 587...593nm
Operating voltage: 2.2V
Luminosity: 25...63mcd
Mounting: SMD
Manufacturer series: EXCELED™
Power: 54mW
Front: flat
Type of diode: LED
LED lens: transparent
LED current: 20mA
Dimensions: 1.6x0.8x0.55mm
на замовлення 373 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 29.86 грн |
| 25+ | 15.51 грн |
| 100+ | 7.33 грн |
| 251+ | 3.5 грн |
| SML-E12D8WT86 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; SMD; 0603; orange; 40÷100mcd; 1.6x0.8x0.36mm; 2.2V; 20mA; 54mW
LED colour: orange
Case: 0603
Wavelength: 602...608nm
Operating voltage: 2.2V
Luminosity: 40...100mcd
Mounting: SMD
Manufacturer series: EXCELED™
Power: 54mW
Front: flat
Type of diode: LED
LED lens: transparent
LED current: 20mA
Dimensions: 1.6x0.8x0.36mm
Category: SMD colour LEDs
Description: LED; SMD; 0603; orange; 40÷100mcd; 1.6x0.8x0.36mm; 2.2V; 20mA; 54mW
LED colour: orange
Case: 0603
Wavelength: 602...608nm
Operating voltage: 2.2V
Luminosity: 40...100mcd
Mounting: SMD
Manufacturer series: EXCELED™
Power: 54mW
Front: flat
Type of diode: LED
LED lens: transparent
LED current: 20mA
Dimensions: 1.6x0.8x0.36mm
на замовлення 382 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 16.95 грн |
| 30+ | 12.81 грн |
| 37+ | 10.25 грн |
| 100+ | 6.33 грн |
| 286+ | 3.06 грн |
| BD52E28G-MTR |
Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; voltage detector; open drain
Case: SSOP5
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Manufacturer series: BD52
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1% accuracy
Threshold on-voltage: 2.8V
Kind of integrated circuit: voltage detector
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: Supervisor Integrated Circuit
Number of channels: 1
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; voltage detector; open drain
Case: SSOP5
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Manufacturer series: BD52
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1% accuracy
Threshold on-voltage: 2.8V
Kind of integrated circuit: voltage detector
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: Supervisor Integrated Circuit
Number of channels: 1
товар відсутній
| BD52E33G-TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; voltage detector; open drain
Case: SSOP5
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Manufacturer series: BD52
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1% accuracy
Threshold on-voltage: 3.3V
Kind of integrated circuit: voltage detector
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: Supervisor Integrated Circuit
Number of channels: 1
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; voltage detector; open drain
Case: SSOP5
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Manufacturer series: BD52
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1% accuracy
Threshold on-voltage: 3.3V
Kind of integrated circuit: voltage detector
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: Supervisor Integrated Circuit
Number of channels: 1
товар відсутній
| BD52E45G-TR |
Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; voltage detector; open drain
Case: SSOP5
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Manufacturer series: BD52
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1% accuracy
Threshold on-voltage: 4.5V
Kind of integrated circuit: voltage detector
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: Supervisor Integrated Circuit
Number of channels: 1
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; voltage detector; open drain
Case: SSOP5
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Manufacturer series: BD52
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1% accuracy
Threshold on-voltage: 4.5V
Kind of integrated circuit: voltage detector
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: Supervisor Integrated Circuit
Number of channels: 1
товар відсутній
| LM4565FJ-GE2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD operational amplifiers
Description: IC: operational amplifier
Mounting: SMT
Type of integrated circuit: operational amplifier
Category: SMD operational amplifiers
Description: IC: operational amplifier
Mounting: SMT
Type of integrated circuit: operational amplifier
товар відсутній
| LM4565F-GE2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD operational amplifiers
Description: IC: operational amplifier
Mounting: SMT
Type of integrated circuit: operational amplifier
Category: SMD operational amplifiers
Description: IC: operational amplifier
Mounting: SMT
Type of integrated circuit: operational amplifier
товар відсутній
| LM4565FV-GE2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD operational amplifiers
Description: IC: operational amplifier
Mounting: SMT
Type of integrated circuit: operational amplifier
Category: SMD operational amplifiers
Description: IC: operational amplifier
Mounting: SMT
Type of integrated circuit: operational amplifier
товар відсутній
| LM4565FVJ-GE2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD operational amplifiers
Description: IC: operational amplifier
Mounting: SMT
Type of integrated circuit: operational amplifier
Category: SMD operational amplifiers
Description: IC: operational amplifier
Mounting: SMT
Type of integrated circuit: operational amplifier
товар відсутній
| LM4565FVM-GTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD operational amplifiers
Description: IC: operational amplifier
Mounting: SMT
Type of integrated circuit: operational amplifier
Category: SMD operational amplifiers
Description: IC: operational amplifier
Mounting: SMT
Type of integrated circuit: operational amplifier
товар відсутній
| RQ5P010SNTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1A; Idm: 4A; 1W; TSMT3
On-state resistance: 0.58Ω
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 3.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 4A
Mounting: SMD
Case: TSMT3
Drain-source voltage: 100V
Drain current: 1A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1A; Idm: 4A; 1W; TSMT3
On-state resistance: 0.58Ω
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 3.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 4A
Mounting: SMD
Case: TSMT3
Drain-source voltage: 100V
Drain current: 1A
товар відсутній
| RQ5A030APTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -3A; Idm: -9A; 1W; TSMT3
On-state resistance: 0.18Ω
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 16nC
Kind of channel: enhanced
Pulsed drain current: -9A
Mounting: SMD
Case: TSMT3
Drain-source voltage: -12V
Drain current: -3A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -3A; Idm: -9A; 1W; TSMT3
On-state resistance: 0.18Ω
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 16nC
Kind of channel: enhanced
Pulsed drain current: -9A
Mounting: SMD
Case: TSMT3
Drain-source voltage: -12V
Drain current: -3A
товар відсутній
| RQ5A040ZPTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -4A; Idm: -16A; 1W; TSMT3
On-state resistance: 0.11Ω
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 30nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -16A
Mounting: SMD
Case: TSMT3
Drain-source voltage: -12V
Drain current: -4A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -4A; Idm: -16A; 1W; TSMT3
On-state resistance: 0.11Ω
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 30nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -16A
Mounting: SMD
Case: TSMT3
Drain-source voltage: -12V
Drain current: -4A
товар відсутній
| RQ5E015RPTL |
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; Idm: -6A; 1W; TSMT3
On-state resistance: 0.27Ω
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 3.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -6A
Mounting: SMD
Case: TSMT3
Drain-source voltage: -30V
Drain current: -1.5A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; Idm: -6A; 1W; TSMT3
On-state resistance: 0.27Ω
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 3.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -6A
Mounting: SMD
Case: TSMT3
Drain-source voltage: -30V
Drain current: -1.5A
товар відсутній
| RQ5E025TNTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 1W; TSMT3
On-state resistance: 0.133Ω
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 3.3nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 10A
Mounting: SMD
Case: TSMT3
Drain-source voltage: 30V
Drain current: 2.5A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 1W; TSMT3
On-state resistance: 0.133Ω
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 3.3nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 10A
Mounting: SMD
Case: TSMT3
Drain-source voltage: 30V
Drain current: 2.5A
товар відсутній
| RQ5E040TNTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 16A; 1W; TSMT3
On-state resistance: 66mΩ
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 5.9nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 16A
Mounting: SMD
Case: TSMT3
Drain-source voltage: 30V
Drain current: 4A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 16A; 1W; TSMT3
On-state resistance: 66mΩ
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 5.9nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 16A
Mounting: SMD
Case: TSMT3
Drain-source voltage: 30V
Drain current: 4A
товар відсутній
| RQ5H020TNTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 2A; Idm: 8A; 1W; TSMT3
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 2.9nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 8A
Mounting: SMD
Case: TSMT3
Drain-source voltage: 45V
Drain current: 2A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 2A; Idm: 8A; 1W; TSMT3
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 2.9nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 8A
Mounting: SMD
Case: TSMT3
Drain-source voltage: 45V
Drain current: 2A
товар відсутній
| RQ5H025TNTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 2.5A; Idm: 10A; 1W; TSMT3
On-state resistance: 0.175Ω
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 3.2nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 10A
Mounting: SMD
Case: TSMT3
Drain-source voltage: 45V
Drain current: 2.5A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 2.5A; Idm: 10A; 1W; TSMT3
On-state resistance: 0.175Ω
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 3.2nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 10A
Mounting: SMD
Case: TSMT3
Drain-source voltage: 45V
Drain current: 2.5A
товар відсутній
| RQ5L020SNTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 1W; TSMT3
On-state resistance: 0.21Ω
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 2.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 8A
Mounting: SMD
Case: TSMT3
Drain-source voltage: 60V
Drain current: 2A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 1W; TSMT3
On-state resistance: 0.21Ω
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 2.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 8A
Mounting: SMD
Case: TSMT3
Drain-source voltage: 60V
Drain current: 2A
товар відсутній
| RUM001L02T2CL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.1A; Idm: 0.4A; 150mW; SOT723
Power dissipation: 0.15W
Mounting: SMD
Kind of package: reel; tape
Case: SOT723
Features of semiconductor devices: ESD protected gate
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 0.4A
Drain-source voltage: 20V
Drain current: 0.1A
On-state resistance: 3.5Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.1A; Idm: 0.4A; 150mW; SOT723
Power dissipation: 0.15W
Mounting: SMD
Kind of package: reel; tape
Case: SOT723
Features of semiconductor devices: ESD protected gate
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 0.4A
Drain-source voltage: 20V
Drain current: 0.1A
On-state resistance: 3.5Ω
Type of transistor: N-MOSFET
на замовлення 16140 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 17.75 грн |
| 35+ | 10.94 грн |
| 63+ | 5.99 грн |
| 100+ | 4.67 грн |
| 250+ | 3.61 грн |
| 457+ | 1.92 грн |
| 1257+ | 1.81 грн |
| LM4559FJ-GE2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD operational amplifiers
Description: IC: operational amplifier
Mounting: SMT
Type of integrated circuit: operational amplifier
Category: SMD operational amplifiers
Description: IC: operational amplifier
Mounting: SMT
Type of integrated circuit: operational amplifier
товар відсутній
| LM4559FVT-GE2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD operational amplifiers
Description: IC: operational amplifier
Mounting: SMT
Type of integrated circuit: operational amplifier
Category: SMD operational amplifiers
Description: IC: operational amplifier
Mounting: SMT
Type of integrated circuit: operational amplifier
товар відсутній
| UDZVTE-1715B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 15V; SMD; reel,tape; SC90A,SOD323F; 100nA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SC90A; SOD323F
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 15V; SMD; reel,tape; SC90A,SOD323F; 100nA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SC90A; SOD323F
Semiconductor structure: single diode
Leakage current: 0.1µA
на замовлення 1225 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 15.33 грн |
| 103+ | 3.67 грн |
| 123+ | 3.06 грн |
| 164+ | 2.29 грн |
| 622+ | 1.41 грн |
| KDZVTR8.2B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 8.2V; SMD; reel,tape; SOD123F; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 20µA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 8.2V; SMD; reel,tape; SOD123F; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 20µA
на замовлення 2981 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 34+ | 12.1 грн |
| 48+ | 7.87 грн |
| 100+ | 6.97 грн |
| 136+ | 6.44 грн |
| 374+ | 6.07 грн |
| TFZVTR8.2B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 8.2V; SMD; reel,tape; SOD323HE; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323HE
Semiconductor structure: single diode
Leakage current: 0.5µA
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 8.2V; SMD; reel,tape; SOD323HE; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323HE
Semiconductor structure: single diode
Leakage current: 0.5µA
товар відсутній
| YFZVFHTR8.2B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 8.2V; SMD; reel,tape; SOD323HE; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323HE
Semiconductor structure: single diode
Leakage current: 0.5µA
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 8.2V; SMD; reel,tape; SOD323HE; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323HE
Semiconductor structure: single diode
Leakage current: 0.5µA
товар відсутній