RGT40NS65DGTL Rohm Semiconductor
Виробник: Rohm SemiconductorDescription: IGBT TRENCH FIELD 650V 40A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/75ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 161 W
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 88.15 грн |
| 2000+ | 80.64 грн |
| 5000+ | 77.61 грн |
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Технічний опис RGT40NS65DGTL Rohm Semiconductor
Description: IGBT TRENCH FIELD 650V 40A LPDS, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 58 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A, Supplier Device Package: LPDS, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 22ns/75ns, Test Condition: 400V, 20A, 10Ohm, 15V, Gate Charge: 40 nC, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 161 W.
Інші пропозиції RGT40NS65DGTL за ціною від 77.69 грн до 207.29 грн
| Фото | Назва | Виробник | Інформація |
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RGT40NS65DGTL | Виробник : Rohm Semiconductor |
Description: IGBT TRENCH FIELD 650V 40A LPDS Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A Supplier Device Package: LPDS IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 22ns/75ns Test Condition: 400V, 20A, 10Ohm, 15V Gate Charge: 40 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 60 A Power - Max: 161 W |
на замовлення 6965 шт: термін постачання 21-31 дні (днів) |
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RGT40NS65DGTL | Виробник : ROHM Semiconductor |
IGBTs 650V 20A IGBT Stop Trench |
на замовлення 1940 шт: термін постачання 21-30 дні (днів) |
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| RGT40NS65DGTL | Виробник : ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 20A; 70W; LPDS Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 20A Power dissipation: 70W Case: LPDS Gate-emitter voltage: ±30V Pulsed collector current: 60A Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Turn-on time: 51ns Turn-off time: 204ns Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
товар відсутній |
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| RGT40NS65DGTL | Виробник : ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 20A; 70W; LPDS Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 20A Power dissipation: 70W Case: LPDS Gate-emitter voltage: ±30V Pulsed collector current: 60A Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Turn-on time: 51ns Turn-off time: 204ns Features of semiconductor devices: integrated anti-parallel diode |
товар відсутній |