| Фото | Назва | Виробник | Інформація |
Доступність |
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NCP698SQ25T1G | onsemi |
 Description: IC REG LINEAR 2.5V 150MA SC82ABPackaging: Cut Tape (CT) Package / Case: SC-82A, SOT-343 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 6 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: SC-82AB Voltage - Output (Min/Fixed): 2.5V Control Features: Enable Part Status: Active Voltage Dropout (Max): 0.7V @ 150mA Protection Features: Over Current, Over Temperature |
на замовлення 5990 шт: термін постачання 21-31 дні (днів) |
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NCP698SQ33T1G | onsemi |
Description: IC REG LINEAR 3.3V 150MA SC82AB Packaging: Cut Tape (CT) Package / Case: SC-82A, SOT-343 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 6 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: SC-82AB Voltage - Output (Min/Fixed): 3.3V Control Features: Enable Part Status: Active Voltage Dropout (Max): 0.525V @ 150mA Protection Features: Over Current, Over Temperature |
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NCP698SQ50T1G | onsemi |
Description: IC REG LINEAR 5V 150MA SC82AB |
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FDP24N40 | onsemi |
Description: MOSFET N-CH 400V 24A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 175mOhm @ 12A, 10V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 25 V |
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FDP090N10 | onsemi |
Description: MOSFET N-CH 100V 75A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 75A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8225 pF @ 25 V |
на замовлення 14360 шт: термін постачання 21-31 дні (днів) |
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FPF1007 | onsemi |
Description: IC PWR SWITCH P-CH 1:1 6MICROFET |
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FPF1008 | onsemi |
Description: IC PWR SWITCH P-CH 1:1 6MICROFET Packaging: Tape & Reel (TR) Features: Load Discharge, Slew Rate Controlled Package / Case: 6-WDFN Exposed Pad Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 30mOhm Input Type: Non-Inverting Voltage - Load: 1.2V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.5A Ratio - Input:Output: 1:1 Supplier Device Package: 6-MicroFET (2x2) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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FPF1009 | onsemi |
Description: IC PWR SWITCH P-CH 1:1 6MICROFET |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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FPF1007 | onsemi |
Description: IC PWR SWITCH P-CH 1:1 6MICROFET |
на замовлення 481 шт: термін постачання 21-31 дні (днів) |
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FPF1008 | onsemi |
Description: IC PWR SWITCH P-CH 1:1 6MICROFET Packaging: Cut Tape (CT) Features: Load Discharge, Slew Rate Controlled Package / Case: 6-WDFN Exposed Pad Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 30mOhm Input Type: Non-Inverting Voltage - Load: 1.2V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.5A Ratio - Input:Output: 1:1 Supplier Device Package: 6-MicroFET (2x2) |
на замовлення 6381 шт: термін постачання 21-31 дні (днів) |
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FPF1009 | onsemi |
Description: IC PWR SWITCH P-CH 1:1 6MICROFET |
на замовлення 9531 шт: термін постачання 21-31 дні (днів) |
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FAN3224CMX | onsemi |
Description: IC GATE DRVR LOW-SIDE 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 18V Input Type: Non-Inverting Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 12ns, 9ns Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: N-Channel MOSFET Current - Peak Output (Source, Sink): 5A, 5A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 17500 шт: термін постачання 21-31 дні (днів) |
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FAN3226TMX | onsemi |
Description: IC GATE DRVR LOW-SIDE 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 18V Input Type: Inverting Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 12ns, 9ns Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2V Current - Peak Output (Source, Sink): 3A, 3A Part Status: Last Time Buy DigiKey Programmable: Not Verified |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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FAN3224CMX | onsemi |
Description: IC GATE DRVR LOW-SIDE 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 18V Input Type: Non-Inverting Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 12ns, 9ns Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: N-Channel MOSFET Current - Peak Output (Source, Sink): 5A, 5A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 18714 шт: термін постачання 21-31 дні (днів) |
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FAN3226TMX | onsemi |
Description: IC GATE DRVR LOW-SIDE 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 18V Input Type: Inverting Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 12ns, 9ns Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2V Current - Peak Output (Source, Sink): 3A, 3A Part Status: Last Time Buy DigiKey Programmable: Not Verified |
на замовлення 4570 шт: термін постачання 21-31 дні (днів) |
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CAT3637HV3-GT2 | onsemi |
Description: IC LED DRV RGLT MULT-STEP 16TQFN Packaging: Tape & Reel (TR) Package / Case: 16-WFQFN Exposed Pad Voltage - Output: 7V Mounting Type: Surface Mount Number of Outputs: 6 Frequency: 800kHz ~ 1.1MHz Type: DC DC Regulator Operating Temperature: -40°C ~ 85°C (TA) Applications: Backlight Current - Output / Channel: 30mA Internal Switch(s): Yes Topology: Switched Capacitor (Charge Pump) Supplier Device Package: 16-TQFN (3x3) Dimming: Multi-Step Voltage - Supply (Min): 2.5V Voltage - Supply (Max): 5.5V Part Status: Obsolete |
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FDA24N40F | onsemi |
Description: MOSFET N-CH 400V 23A TO3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 11.5A, 10V Power Dissipation (Max): 235W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3030 pF @ 25 V |
на замовлення 5241 шт: термін постачання 21-31 дні (днів) |
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FDC855N | onsemi |
Description: MOSFET N-CH 30V 6.1A SUPERSOT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta) Rds On (Max) @ Id, Vgs: 27mOhm @ 6.1A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SuperSOT™-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 15 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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FDD3860 | onsemi |
Description: MOSFET N-CH 100V 6.2A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta) Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V Power Dissipation (Max): 3.1W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1740 pF @ 50 V |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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FDMS8460 | onsemi |
Description: MOSFET N-CH 40V 25A/49A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 49A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 25A, 10V Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7205 pF @ 20 V |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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FDP18N20F | onsemi |
Description: MOSFET N-CH 200V 18A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 145mOhm @ 9A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V |
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FDP26N40 | onsemi |
Description: MOSFET N-CH 400V 26A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 13A, 10V Power Dissipation (Max): 265W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3185 pF @ 25 V |
на замовлення 164 шт: термін постачання 21-31 дні (днів) |
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FGH80N60FD2TU | onsemi |
Description: IGBT FIELD STOP 600V 80A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 61 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Field Stop Td (on/off) @ 25°C: 21ns/126ns Switching Energy: 1mJ (on), 520µJ (off) Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 120 nC Part Status: Obsolete Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 160 A Power - Max: 290 W |
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FGPF50N30TTU | onsemi |
Description: IGBT 300V 46.8W TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 15A Supplier Device Package: TO-220F-3 IGBT Type: Trench Gate Charge: 97 nC Part Status: Not For New Designs Voltage - Collector Emitter Breakdown (Max): 300 V Current - Collector Pulsed (Icm): 120 A Power - Max: 46.8 W |
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FOD420 | onsemi |
Description: OPTOISOLATOR 5KV TRIAC 6DIP Packaging: Tube Package / Case: 6-DIP (0.300", 7.62mm) Output Type: Triac Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.28V Voltage - Isolation: 5000Vrms Approval Agency: cUL, FIMKO, UL Current - Hold (Ih): 500µA Turn On Time: 60µs Supplier Device Package: 6-DIP Zero Crossing Circuit: No Static dV/dt (Min): 10kV/µs Current - LED Trigger (Ift) (Max): 2mA Part Status: Active Number of Channels: 1 Voltage - Off State: 600 V Current - DC Forward (If) (Max): 30 mA |
на замовлення 1880 шт: термін постачання 21-31 дні (днів) |
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FOD4208 | onsemi |
Description: OPTOISOLATOR 5KV TRIAC 6DIP Packaging: Tube Package / Case: 6-DIP (0.300", 7.62mm) Output Type: Triac Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.28V Voltage - Isolation: 5000Vrms Approval Agency: cUL, FIMKO, UL Current - Hold (Ih): 500µA Turn On Time: 60µs Supplier Device Package: 6-DIP Zero Crossing Circuit: No Static dV/dt (Min): 10kV/µs Current - LED Trigger (Ift) (Max): 2mA Part Status: Active Number of Channels: 1 Voltage - Off State: 800 V Current - DC Forward (If) (Max): 30 mA |
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FOD4218 | onsemi |
Description: OPTOISOLATOR 5KV TRIAC 6DIP Packaging: Tube Package / Case: 6-DIP (0.300", 7.62mm) Output Type: Triac Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.28V Voltage - Isolation: 5000Vrms Approval Agency: cUL, FIMKO, UL Current - Hold (Ih): 500µA Turn On Time: 60µs Supplier Device Package: 6-DIP Zero Crossing Circuit: No Static dV/dt (Min): 10kV/µs Current - LED Trigger (Ift) (Max): 1.3mA Part Status: Active Number of Channels: 1 Voltage - Off State: 800 V Current - DC Forward (If) (Max): 30 mA |
на замовлення 2086 шт: термін постачання 21-31 дні (днів) |
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FSBB20CH60C | onsemi |
Description: MODULE SPM 600V 20A 27PWRDIP Packaging: Tube Package / Case: 27-PowerDIP Module (1.205", 30.60mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Voltage - Isolation: 2500Vrms Part Status: Not For New Designs Current: 20 A Voltage: 600 V |
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FSBB30CH60C | onsemi |
Description: MODULE SPM 600KV 30A 27PWRDIP Packaging: Tube Package / Case: 27-PowerDIP Module (1.205", 30.60mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Voltage - Isolation: 2500Vrms Part Status: Not For New Designs Current: 30 A Voltage: 600 V |
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FDC855N | onsemi |
Description: MOSFET N-CH 30V 6.1A SUPERSOT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta) Rds On (Max) @ Id, Vgs: 27mOhm @ 6.1A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SuperSOT™-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 15 V |
на замовлення 5289 шт: термін постачання 21-31 дні (днів) |
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FDD3860 | onsemi |
Description: MOSFET N-CH 100V 6.2A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta) Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V Power Dissipation (Max): 3.1W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1740 pF @ 50 V |
на замовлення 8398 шт: термін постачання 21-31 дні (днів) |
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FDMS8460 | onsemi |
Description: MOSFET N-CH 40V 25A/49A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 49A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 25A, 10V Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7205 pF @ 20 V |
на замовлення 22412 шт: термін постачання 21-31 дні (днів) |
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NOII4SM6600A-QDC | onsemi |
Description: SENSOR IMAGE MONO CMOS 68-LCC |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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| CYIL1SE0300-EVAL | onsemi |
Description: BOARD EVAL IMAGE SENSOR LUPA-300 Packaging: Tray Sensitivity: 250fps Interface: SPI Voltage - Supply: 2.5V ~ 3.3V Sensor Type: CMOS Imaging, Color (RGB) Utilized IC / Part: LUPA-300 Supplied Contents: Board(s) Embedded: No Sensing Range: VGA |
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CYIL1SM0300-EVAL | onsemi |
Description: BOARD EVAL IMAGE SENSOR LUPA-300 Packaging: Tray Sensitivity: 250fps Interface: SPI Voltage - Supply: 2.5V ~ 3.3V Sensor Type: CMOS Imaging, Monochrome Utilized IC / Part: LUPA-300 Supplied Contents: Board(s) Embedded: No Sensing Range: VGA |
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CYIL1SM0300AA-QDC | onsemi |
Description: SENSOR IMAGE MONO CMOS 48-LCC Packaging: Tray Package / Case: 48-LCC Type: CMOS Operating Temperature: -40°C ~ 70°C (TA) Voltage - Supply: 2.5V ~ 3.3V Pixel Size: 9.9µm x 9.9µm Active Pixel Array: 640H x 480V Supplier Device Package: 48-LCC (14.22x14.22) Frames per Second: 250 |
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CYIL1SM4000-EVAL | onsemi |
Description: BOARD EVAL IMAGE SENS LUPA-4000 Packaging: Tray Sensitivity: 15fps Interface: SPI Voltage - Supply: 2.5V ~ 3.3V Sensor Type: CMOS Imaging, Monochrome Utilized IC / Part: LUPA-4000 Supplied Contents: Board(s) Embedded: No Sensing Range: 4 Megapixel |
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CAT3648HV3-GT2 | onsemi |
Description: IC LED DRV RGLT MULT-STEP 16TQFN Packaging: Tape & Reel (TR) Package / Case: 16-WFQFN Exposed Pad Voltage - Output: 7V Mounting Type: Surface Mount Number of Outputs: 4 Frequency: 1MHz ~ 1.3MHz Type: DC DC Regulator Operating Temperature: -40°C ~ 85°C (TA) Applications: Backlight Current - Output / Channel: 25mA Internal Switch(s): Yes Topology: Switched Capacitor (Charge Pump) Supplier Device Package: 16-TQFN (3x3) Dimming: Multi-Step Voltage - Supply (Min): 2.5V Voltage - Supply (Max): 5.5V Part Status: Obsolete |
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CAT3648HV3-GT2 | onsemi |
Description: IC LED DRV RGLT MULT-STEP 16TQFN Packaging: Cut Tape (CT) Package / Case: 16-WFQFN Exposed Pad Voltage - Output: 7V Mounting Type: Surface Mount Number of Outputs: 4 Frequency: 1MHz ~ 1.3MHz Type: DC DC Regulator Operating Temperature: -40°C ~ 85°C (TA) Applications: Backlight Current - Output / Channel: 25mA Internal Switch(s): Yes Topology: Switched Capacitor (Charge Pump) Supplier Device Package: 16-TQFN (3x3) Dimming: Multi-Step Voltage - Supply (Min): 2.5V Voltage - Supply (Max): 5.5V Part Status: Obsolete |
товар відсутній |
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MOC3021SR2M | onsemi |
Description: OPTOISOLATOR 4.17KV TRIAC 6SMD Packaging: Cut Tape (CT) Package / Case: 6-SMD, Gull Wing Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.15V Voltage - Isolation: 4170Vrms Approval Agency: UL Current - Hold (Ih): 100µA (Typ) Supplier Device Package: 6-SMD Zero Crossing Circuit: No Current - LED Trigger (Ift) (Max): 15mA Part Status: Active Number of Channels: 1 Voltage - Off State: 400 V Current - DC Forward (If) (Max): 60 mA |
на замовлення 114000 шт: термін постачання 21-31 дні (днів) |
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MOC3023SR2VM | onsemi |
Description: OPTOISOLATOR 4.17KV TRIAC 6SMD Packaging: Cut Tape (CT) Package / Case: 6-SMD, Gull Wing Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.15V Voltage - Isolation: 4170Vrms Approval Agency: IEC/EN/DIN, UL Current - Hold (Ih): 100µA (Typ) Supplier Device Package: 6-SMD Zero Crossing Circuit: No Current - LED Trigger (Ift) (Max): 5mA Part Status: Active Number of Channels: 1 Voltage - Off State: 400 V Current - DC Forward (If) (Max): 60 mA |
на замовлення 583497 шт: термін постачання 21-31 дні (днів) |
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MOC3052SR2M | onsemi |
Description: OPTOISOLATOR 4.17KV TRIAC 6SMD Packaging: Cut Tape (CT) Package / Case: 6-SMD, Gull Wing Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.18V Voltage - Isolation: 4170Vrms Approval Agency: UR Current - Hold (Ih): 220µA (Typ) Supplier Device Package: 6-SMD Zero Crossing Circuit: No Static dV/dt (Min): 1kV/µs Current - LED Trigger (Ift) (Max): 10mA Part Status: Active Number of Channels: 1 Voltage - Off State: 600 V Current - DC Forward (If) (Max): 60 mA |
на замовлення 1089735 шт: термін постачання 21-31 дні (днів) |
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MOC3083SR2M | onsemi |
Description: OPTOISOLATOR 4.17KV TRIAC 6SMD Packaging: Cut Tape (CT) Package / Case: 6-SMD, Gull Wing Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.3V Voltage - Isolation: 4170Vrms Approval Agency: UL Current - Hold (Ih): 500µA (Typ) Supplier Device Package: 6-SMD Zero Crossing Circuit: Yes Static dV/dt (Min): 600V/µs Current - LED Trigger (Ift) (Max): 5mA Part Status: Active Number of Channels: 1 Voltage - Off State: 800 V Current - DC Forward (If) (Max): 60 mA |
на замовлення 432186 шт: термін постачання 21-31 дні (днів) |
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FDB13AN06A0 | onsemi |
Description: MOSFET N-CH 60V 10.9A/62A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 62A (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 62A, 10V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V |
на замовлення 5710 шт: термін постачання 21-31 дні (днів) |
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FDB3652 | onsemi |
Description: MOSFET N-CH 100V 9A/61A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 61A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 61A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V |
товар відсутній |
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FDC602P | onsemi |
Description: MOSFET P-CH 20V 5.5A SUPERSOT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 5.5A, 4.5V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SuperSOT™-6 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 10 V |
на замовлення 8413 шт: термін постачання 21-31 дні (днів) |
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FDC6321C | onsemi |
Description: MOSFET N/P-CH 25V 0.68A SSOT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 680mA, 460mA Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SuperSOT™-6 |
на замовлення 8535 шт: термін постачання 21-31 дні (днів) |
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FDC6323L | onsemi |
Description: IC PWR SWITCH P-CH 1:1 SUPERSOT6 |
товар відсутній |
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FDC6324L | onsemi |
Description: IC PWR SWITCH P-CH 1:1 SUPERSOT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -55°C ~ 150°C (TJ) Output Configuration: High Side Input Type: Non-Inverting Voltage - Load: 3V ~ 20V Voltage - Supply (Vcc/Vdd): 1.5V ~ 8V Current - Output (Max): 1.5A Ratio - Input:Output: 1:1 Supplier Device Package: SuperSOT™-6 Part Status: Active |
на замовлення 2132 шт: термін постачання 21-31 дні (днів) |
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FDC6329L | onsemi |
Description: IC PWR SWITCH P-CH 1:1 SUPERSOT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -55°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 47mOhm Input Type: Non-Inverting Voltage - Load: 2.5V ~ 8V Voltage - Supply (Vcc/Vdd): 1.5V ~ 8V Current - Output (Max): 2.5A Ratio - Input:Output: 1:1 Supplier Device Package: SuperSOT™-6 |
на замовлення 51487 шт: термін постачання 21-31 дні (днів) |
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FDC640P | onsemi |
Description: MOSFET P-CH 20V 4.5A SUPERSOT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 53mOhm @ 4.5A, 4.5V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SuperSOT™-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 10 V |
на замовлення 3468 шт: термін постачання 21-31 дні (днів) |
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FDC6420C | onsemi |
Description: MOSFET N/P-CH 20V 3A/2.2A SSOT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A, 2.2A Input Capacitance (Ciss) (Max) @ Vds: 324pF @ 10V Rds On (Max) @ Id, Vgs: 70mOhm @ 3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SuperSOT™-6 |
на замовлення 2630 шт: термін постачання 21-31 дні (днів) |
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| FDC654P | onsemi |
Description: MOSFET P-CH 30V 3.6A SUPERSOT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 3.6A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SuperSOT™-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 298 pF @ 15 V |
на замовлення 10965 шт: термін постачання 21-31 дні (днів) |
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FDC655BN | onsemi |
Description: MOSFET N-CH 30V 6.3A SUPERSOT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 6.3A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SuperSOT™-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 15 V |
на замовлення 34858 шт: термін постачання 21-31 дні (днів) |
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FDG6306P | onsemi |
Description: MOSFET 2P-CH 20V 600MA SC88 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 600mA Input Capacitance (Ciss) (Max) @ Vds: 114pF @ 10V Rds On (Max) @ Id, Vgs: 420mOhm @ 600mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-88 (SC-70-6) |
товар відсутній |
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FDG6321C | onsemi |
Description: MOSFET N/P-CH 25V 0.5A SC88 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300mW Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 500mA, 410mA Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-88 (SC-70-6) |
на замовлення 2600 шт: термін постачання 21-31 дні (днів) |
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FDG6332C | onsemi |
Description: MOSFET N/P-CH 20V 0.7A SC88 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 700mA, 600mA Input Capacitance (Ciss) (Max) @ Vds: 113pF @ 10V Rds On (Max) @ Id, Vgs: 300mOhm @ 700mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-88 (SC-70-6) Part Status: Active |
на замовлення 8963 шт: термін постачання 21-31 дні (днів) |
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FDN302P | onsemi |
Description: MOSFET P-CH 20V 2.4A SUPERSOT3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Rds On (Max) @ Id, Vgs: 55mOhm @ 2.4A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 882 pF @ 10 V |
на замовлення 22270 шт: термін постачання 21-31 дні (днів) |
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FDN304PZ | onsemi |
Description: MOSFET P-CH 20V 2.4A SUPERSOT3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 2.4A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 10 V |
на замовлення 45734 шт: термін постачання 21-31 дні (днів) |
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FDN327N | onsemi |
Description: MOSFET N-CH 20V 2A SUPERSOT3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 423 pF @ 10 V |
на замовлення 18736 шт: термін постачання 21-31 дні (днів) |
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| NCP698SQ25T1G |
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Виробник: onsemi
Description: IC REG LINEAR 2.5V 150MA SC82AB
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SC-82AB
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.7V @ 150mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 2.5V 150MA SC82AB
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SC-82AB
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.7V @ 150mA
Protection Features: Over Current, Over Temperature
на замовлення 5990 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 39.68 грн |
| 10+ | 32.4 грн |
| 25+ | 30.3 грн |
| 100+ | 21.12 грн |
| 250+ | 17.87 грн |
| 500+ | 17.06 грн |
| 1000+ | 12.38 грн |
| NCP698SQ33T1G |
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Виробник: onsemi
Description: IC REG LINEAR 3.3V 150MA SC82AB
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SC-82AB
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.525V @ 150mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 3.3V 150MA SC82AB
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SC-82AB
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.525V @ 150mA
Protection Features: Over Current, Over Temperature
товар відсутній
| FDP24N40 |
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Виробник: onsemi
Description: MOSFET N-CH 400V 24A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 12A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 25 V
Description: MOSFET N-CH 400V 24A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 12A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 25 V
товар відсутній
| FDP090N10 |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 75A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 75A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8225 pF @ 25 V
Description: MOSFET N-CH 100V 75A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 75A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8225 pF @ 25 V
на замовлення 14360 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 171.68 грн |
| 50+ | 130.94 грн |
| 100+ | 112.23 грн |
| 500+ | 103.02 грн |
| FPF1008 |
|
Виробник: onsemi
Description: IC PWR SWITCH P-CH 1:1 6MICROFET
Packaging: Tape & Reel (TR)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 6-WDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 30mOhm
Input Type: Non-Inverting
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-MicroFET (2x2)
Description: IC PWR SWITCH P-CH 1:1 6MICROFET
Packaging: Tape & Reel (TR)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 6-WDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 30mOhm
Input Type: Non-Inverting
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-MicroFET (2x2)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 23.42 грн |
| 6000+ | 21.71 грн |
| FPF1009 |
|
Виробник: onsemi
Description: IC PWR SWITCH P-CH 1:1 6MICROFET
Description: IC PWR SWITCH P-CH 1:1 6MICROFET
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 30.46 грн |
| 6000+ | 27.87 грн |
| FPF1007 |
|
Виробник: onsemi
Description: IC PWR SWITCH P-CH 1:1 6MICROFET
Description: IC PWR SWITCH P-CH 1:1 6MICROFET
на замовлення 481 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 71.73 грн |
| 10+ | 60.55 грн |
| 25+ | 56.87 грн |
| 100+ | 43.56 грн |
| 250+ | 40.46 грн |
| FPF1008 |
|
Виробник: onsemi
Description: IC PWR SWITCH P-CH 1:1 6MICROFET
Packaging: Cut Tape (CT)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 6-WDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 30mOhm
Input Type: Non-Inverting
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-MicroFET (2x2)
Description: IC PWR SWITCH P-CH 1:1 6MICROFET
Packaging: Cut Tape (CT)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 6-WDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 30mOhm
Input Type: Non-Inverting
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-MicroFET (2x2)
на замовлення 6381 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 57.99 грн |
| 10+ | 50.04 грн |
| 25+ | 47.5 грн |
| 100+ | 34.22 грн |
| 250+ | 30.24 грн |
| FPF1009 |
|
Виробник: onsemi
Description: IC PWR SWITCH P-CH 1:1 6MICROFET
Description: IC PWR SWITCH P-CH 1:1 6MICROFET
на замовлення 9531 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 71.73 грн |
| 10+ | 61.8 грн |
| 25+ | 58.67 грн |
| 100+ | 45.23 грн |
| 250+ | 42.28 грн |
| 500+ | 37.36 грн |
| 1000+ | 29.01 грн |
| FAN3224CMX |
|
Виробник: onsemi
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 17500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 67.54 грн |
| 5000+ | 62.54 грн |
| FAN3226TMX |
|
Виробник: onsemi
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 3A, 3A
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 3A, 3A
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 44.21 грн |
| FAN3224CMX |
|
Виробник: onsemi
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 18714 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 153.37 грн |
| 10+ | 132.55 грн |
| 25+ | 125.06 грн |
| 100+ | 93.9 грн |
| 250+ | 82.16 грн |
| 500+ | 79.82 грн |
| 1000+ | 62.34 грн |
| FAN3226TMX |
|
Виробник: onsemi
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 3A, 3A
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 3A, 3A
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
на замовлення 4570 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 109.88 грн |
| 10+ | 94.42 грн |
| 25+ | 89.61 грн |
| 100+ | 64.58 грн |
| 250+ | 57.07 грн |
| 500+ | 54.07 грн |
| 1000+ | 41.37 грн |
| CAT3637HV3-GT2 |
|
Виробник: onsemi
Description: IC LED DRV RGLT MULT-STEP 16TQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-WFQFN Exposed Pad
Voltage - Output: 7V
Mounting Type: Surface Mount
Number of Outputs: 6
Frequency: 800kHz ~ 1.1MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 30mA
Internal Switch(s): Yes
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: 16-TQFN (3x3)
Dimming: Multi-Step
Voltage - Supply (Min): 2.5V
Voltage - Supply (Max): 5.5V
Part Status: Obsolete
Description: IC LED DRV RGLT MULT-STEP 16TQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-WFQFN Exposed Pad
Voltage - Output: 7V
Mounting Type: Surface Mount
Number of Outputs: 6
Frequency: 800kHz ~ 1.1MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 30mA
Internal Switch(s): Yes
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: 16-TQFN (3x3)
Dimming: Multi-Step
Voltage - Supply (Min): 2.5V
Voltage - Supply (Max): 5.5V
Part Status: Obsolete
товар відсутній
| FDA24N40F |
|
Виробник: onsemi
Description: MOSFET N-CH 400V 23A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 11.5A, 10V
Power Dissipation (Max): 235W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3030 pF @ 25 V
Description: MOSFET N-CH 400V 23A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 11.5A, 10V
Power Dissipation (Max): 235W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3030 pF @ 25 V
на замовлення 5241 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 287.67 грн |
| 30+ | 219.43 грн |
| 120+ | 188.09 грн |
| 510+ | 156.91 грн |
| 1020+ | 134.35 грн |
| 2010+ | 126.51 грн |
| 5010+ | 119.38 грн |
| FDC855N |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 6.1A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 6.1A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 15 V
Description: MOSFET N-CH 30V 6.1A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 6.1A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 16.82 грн |
| FDD3860 |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 6.2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V
Power Dissipation (Max): 3.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1740 pF @ 50 V
Description: MOSFET N-CH 100V 6.2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V
Power Dissipation (Max): 3.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1740 pF @ 50 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 33.83 грн |
| 5000+ | 31.02 грн |
| FDMS8460 |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 25A/49A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 25A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7205 pF @ 20 V
Description: MOSFET N-CH 40V 25A/49A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 25A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7205 pF @ 20 V
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 88.76 грн |
| 6000+ | 82.26 грн |
| FDP18N20F |
|
Виробник: onsemi
Description: MOSFET N-CH 200V 18A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 9A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V
Description: MOSFET N-CH 200V 18A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 9A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V
товар відсутній
| FDP26N40 |
|
Виробник: onsemi
Description: MOSFET N-CH 400V 26A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 13A, 10V
Power Dissipation (Max): 265W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3185 pF @ 25 V
Description: MOSFET N-CH 400V 26A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 13A, 10V
Power Dissipation (Max): 265W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3185 pF @ 25 V
на замовлення 164 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 199.92 грн |
| 10+ | 161.43 грн |
| 100+ | 130.56 грн |
| FGH80N60FD2TU |
|
Виробник: onsemi
Description: IGBT FIELD STOP 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 61 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 21ns/126ns
Switching Energy: 1mJ (on), 520µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 290 W
Description: IGBT FIELD STOP 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 61 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 21ns/126ns
Switching Energy: 1mJ (on), 520µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 290 W
товар відсутній
| FGPF50N30TTU |
|
Виробник: onsemi
Description: IGBT 300V 46.8W TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 15A
Supplier Device Package: TO-220F-3
IGBT Type: Trench
Gate Charge: 97 nC
Part Status: Not For New Designs
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 46.8 W
Description: IGBT 300V 46.8W TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 15A
Supplier Device Package: TO-220F-3
IGBT Type: Trench
Gate Charge: 97 nC
Part Status: Not For New Designs
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 46.8 W
товар відсутній
| FOD420 |
|
Виробник: onsemi
Description: OPTOISOLATOR 5KV TRIAC 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.28V
Voltage - Isolation: 5000Vrms
Approval Agency: cUL, FIMKO, UL
Current - Hold (Ih): 500µA
Turn On Time: 60µs
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Static dV/dt (Min): 10kV/µs
Current - LED Trigger (Ift) (Max): 2mA
Part Status: Active
Number of Channels: 1
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 30 mA
Description: OPTOISOLATOR 5KV TRIAC 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.28V
Voltage - Isolation: 5000Vrms
Approval Agency: cUL, FIMKO, UL
Current - Hold (Ih): 500µA
Turn On Time: 60µs
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Static dV/dt (Min): 10kV/µs
Current - LED Trigger (Ift) (Max): 2mA
Part Status: Active
Number of Channels: 1
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 30 mA
на замовлення 1880 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 292.25 грн |
| 10+ | 199.35 грн |
| 100+ | 163.25 грн |
| 500+ | 129.15 грн |
| 1000+ | 118.46 грн |
| FOD4208 |
|
Виробник: onsemi
Description: OPTOISOLATOR 5KV TRIAC 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.28V
Voltage - Isolation: 5000Vrms
Approval Agency: cUL, FIMKO, UL
Current - Hold (Ih): 500µA
Turn On Time: 60µs
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Static dV/dt (Min): 10kV/µs
Current - LED Trigger (Ift) (Max): 2mA
Part Status: Active
Number of Channels: 1
Voltage - Off State: 800 V
Current - DC Forward (If) (Max): 30 mA
Description: OPTOISOLATOR 5KV TRIAC 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.28V
Voltage - Isolation: 5000Vrms
Approval Agency: cUL, FIMKO, UL
Current - Hold (Ih): 500µA
Turn On Time: 60µs
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Static dV/dt (Min): 10kV/µs
Current - LED Trigger (Ift) (Max): 2mA
Part Status: Active
Number of Channels: 1
Voltage - Off State: 800 V
Current - DC Forward (If) (Max): 30 mA
товар відсутній
| FOD4218 |
|
Виробник: onsemi
Description: OPTOISOLATOR 5KV TRIAC 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.28V
Voltage - Isolation: 5000Vrms
Approval Agency: cUL, FIMKO, UL
Current - Hold (Ih): 500µA
Turn On Time: 60µs
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Static dV/dt (Min): 10kV/µs
Current - LED Trigger (Ift) (Max): 1.3mA
Part Status: Active
Number of Channels: 1
Voltage - Off State: 800 V
Current - DC Forward (If) (Max): 30 mA
Description: OPTOISOLATOR 5KV TRIAC 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.28V
Voltage - Isolation: 5000Vrms
Approval Agency: cUL, FIMKO, UL
Current - Hold (Ih): 500µA
Turn On Time: 60µs
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Static dV/dt (Min): 10kV/µs
Current - LED Trigger (Ift) (Max): 1.3mA
Part Status: Active
Number of Channels: 1
Voltage - Off State: 800 V
Current - DC Forward (If) (Max): 30 mA
на замовлення 2086 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 407.47 грн |
| 10+ | 277.16 грн |
| 100+ | 227.03 грн |
| 500+ | 179.61 грн |
| 1000+ | 164.75 грн |
| 2000+ | 157.93 грн |
| FSBB20CH60C |
|
Виробник: onsemi
Description: MODULE SPM 600V 20A 27PWRDIP
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Part Status: Not For New Designs
Current: 20 A
Voltage: 600 V
Description: MODULE SPM 600V 20A 27PWRDIP
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Part Status: Not For New Designs
Current: 20 A
Voltage: 600 V
товар відсутній
| FSBB30CH60C |
|
Виробник: onsemi
Description: MODULE SPM 600KV 30A 27PWRDIP
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Part Status: Not For New Designs
Current: 30 A
Voltage: 600 V
Description: MODULE SPM 600KV 30A 27PWRDIP
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Part Status: Not For New Designs
Current: 30 A
Voltage: 600 V
товар відсутній
| FDC855N |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 6.1A SUPERSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 6.1A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 15 V
Description: MOSFET N-CH 30V 6.1A SUPERSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 6.1A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 15 V
на замовлення 5289 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 44.26 грн |
| 10+ | 36.96 грн |
| 100+ | 25.56 грн |
| 500+ | 20.05 грн |
| 1000+ | 17.06 грн |
| FDD3860 |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 6.2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V
Power Dissipation (Max): 3.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1740 pF @ 50 V
Description: MOSFET N-CH 100V 6.2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V
Power Dissipation (Max): 3.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1740 pF @ 50 V
на замовлення 8398 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 81.65 грн |
| 10+ | 64.44 грн |
| 100+ | 50.11 грн |
| 500+ | 39.86 грн |
| 1000+ | 32.47 грн |
| FDMS8460 |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 25A/49A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 25A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7205 pF @ 20 V
Description: MOSFET N-CH 40V 25A/49A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 25A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7205 pF @ 20 V
на замовлення 22412 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 196.87 грн |
| 10+ | 157.46 грн |
| 100+ | 125.31 грн |
| 500+ | 99.51 грн |
| 1000+ | 84.43 грн |
| NOII4SM6600A-QDC |
|
Виробник: onsemi
Description: SENSOR IMAGE MONO CMOS 68-LCC
Description: SENSOR IMAGE MONO CMOS 68-LCC
на замовлення 100 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 20432.78 грн |
| 9+ | 18445.9 грн |
| 18+ | 17831.05 грн |
| 27+ | 16156.74 грн |
| 45+ | 15868.23 грн |
| 81+ | 15348.9 грн |
| CYIL1SE0300-EVAL |
|
Виробник: onsemi
Description: BOARD EVAL IMAGE SENSOR LUPA-300
Packaging: Tray
Sensitivity: 250fps
Interface: SPI
Voltage - Supply: 2.5V ~ 3.3V
Sensor Type: CMOS Imaging, Color (RGB)
Utilized IC / Part: LUPA-300
Supplied Contents: Board(s)
Embedded: No
Sensing Range: VGA
Description: BOARD EVAL IMAGE SENSOR LUPA-300
Packaging: Tray
Sensitivity: 250fps
Interface: SPI
Voltage - Supply: 2.5V ~ 3.3V
Sensor Type: CMOS Imaging, Color (RGB)
Utilized IC / Part: LUPA-300
Supplied Contents: Board(s)
Embedded: No
Sensing Range: VGA
товар відсутній
| CYIL1SM0300-EVAL |
|
Виробник: onsemi
Description: BOARD EVAL IMAGE SENSOR LUPA-300
Packaging: Tray
Sensitivity: 250fps
Interface: SPI
Voltage - Supply: 2.5V ~ 3.3V
Sensor Type: CMOS Imaging, Monochrome
Utilized IC / Part: LUPA-300
Supplied Contents: Board(s)
Embedded: No
Sensing Range: VGA
Description: BOARD EVAL IMAGE SENSOR LUPA-300
Packaging: Tray
Sensitivity: 250fps
Interface: SPI
Voltage - Supply: 2.5V ~ 3.3V
Sensor Type: CMOS Imaging, Monochrome
Utilized IC / Part: LUPA-300
Supplied Contents: Board(s)
Embedded: No
Sensing Range: VGA
товар відсутній
| CYIL1SM0300AA-QDC |
|
Виробник: onsemi
Description: SENSOR IMAGE MONO CMOS 48-LCC
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS
Operating Temperature: -40°C ~ 70°C (TA)
Voltage - Supply: 2.5V ~ 3.3V
Pixel Size: 9.9µm x 9.9µm
Active Pixel Array: 640H x 480V
Supplier Device Package: 48-LCC (14.22x14.22)
Frames per Second: 250
Description: SENSOR IMAGE MONO CMOS 48-LCC
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS
Operating Temperature: -40°C ~ 70°C (TA)
Voltage - Supply: 2.5V ~ 3.3V
Pixel Size: 9.9µm x 9.9µm
Active Pixel Array: 640H x 480V
Supplier Device Package: 48-LCC (14.22x14.22)
Frames per Second: 250
товар відсутній
| CYIL1SM4000-EVAL |
|
Виробник: onsemi
Description: BOARD EVAL IMAGE SENS LUPA-4000
Packaging: Tray
Sensitivity: 15fps
Interface: SPI
Voltage - Supply: 2.5V ~ 3.3V
Sensor Type: CMOS Imaging, Monochrome
Utilized IC / Part: LUPA-4000
Supplied Contents: Board(s)
Embedded: No
Sensing Range: 4 Megapixel
Description: BOARD EVAL IMAGE SENS LUPA-4000
Packaging: Tray
Sensitivity: 15fps
Interface: SPI
Voltage - Supply: 2.5V ~ 3.3V
Sensor Type: CMOS Imaging, Monochrome
Utilized IC / Part: LUPA-4000
Supplied Contents: Board(s)
Embedded: No
Sensing Range: 4 Megapixel
товар відсутній
| CAT3648HV3-GT2 |
Виробник: onsemi
Description: IC LED DRV RGLT MULT-STEP 16TQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-WFQFN Exposed Pad
Voltage - Output: 7V
Mounting Type: Surface Mount
Number of Outputs: 4
Frequency: 1MHz ~ 1.3MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 25mA
Internal Switch(s): Yes
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: 16-TQFN (3x3)
Dimming: Multi-Step
Voltage - Supply (Min): 2.5V
Voltage - Supply (Max): 5.5V
Part Status: Obsolete
Description: IC LED DRV RGLT MULT-STEP 16TQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-WFQFN Exposed Pad
Voltage - Output: 7V
Mounting Type: Surface Mount
Number of Outputs: 4
Frequency: 1MHz ~ 1.3MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 25mA
Internal Switch(s): Yes
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: 16-TQFN (3x3)
Dimming: Multi-Step
Voltage - Supply (Min): 2.5V
Voltage - Supply (Max): 5.5V
Part Status: Obsolete
товар відсутній
| CAT3648HV3-GT2 |
Виробник: onsemi
Description: IC LED DRV RGLT MULT-STEP 16TQFN
Packaging: Cut Tape (CT)
Package / Case: 16-WFQFN Exposed Pad
Voltage - Output: 7V
Mounting Type: Surface Mount
Number of Outputs: 4
Frequency: 1MHz ~ 1.3MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 25mA
Internal Switch(s): Yes
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: 16-TQFN (3x3)
Dimming: Multi-Step
Voltage - Supply (Min): 2.5V
Voltage - Supply (Max): 5.5V
Part Status: Obsolete
Description: IC LED DRV RGLT MULT-STEP 16TQFN
Packaging: Cut Tape (CT)
Package / Case: 16-WFQFN Exposed Pad
Voltage - Output: 7V
Mounting Type: Surface Mount
Number of Outputs: 4
Frequency: 1MHz ~ 1.3MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 25mA
Internal Switch(s): Yes
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: 16-TQFN (3x3)
Dimming: Multi-Step
Voltage - Supply (Min): 2.5V
Voltage - Supply (Max): 5.5V
Part Status: Obsolete
товар відсутній
| MOC3021SR2M |
|
Виробник: onsemi
Description: OPTOISOLATOR 4.17KV TRIAC 6SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 4170Vrms
Approval Agency: UL
Current - Hold (Ih): 100µA (Typ)
Supplier Device Package: 6-SMD
Zero Crossing Circuit: No
Current - LED Trigger (Ift) (Max): 15mA
Part Status: Active
Number of Channels: 1
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISOLATOR 4.17KV TRIAC 6SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 4170Vrms
Approval Agency: UL
Current - Hold (Ih): 100µA (Typ)
Supplier Device Package: 6-SMD
Zero Crossing Circuit: No
Current - LED Trigger (Ift) (Max): 15mA
Part Status: Active
Number of Channels: 1
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 60 mA
на замовлення 114000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 57.23 грн |
| 10+ | 36 грн |
| 100+ | 23.55 грн |
| MOC3023SR2VM |
|
Виробник: onsemi
Description: OPTOISOLATOR 4.17KV TRIAC 6SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 4170Vrms
Approval Agency: IEC/EN/DIN, UL
Current - Hold (Ih): 100µA (Typ)
Supplier Device Package: 6-SMD
Zero Crossing Circuit: No
Current - LED Trigger (Ift) (Max): 5mA
Part Status: Active
Number of Channels: 1
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISOLATOR 4.17KV TRIAC 6SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 4170Vrms
Approval Agency: IEC/EN/DIN, UL
Current - Hold (Ih): 100µA (Typ)
Supplier Device Package: 6-SMD
Zero Crossing Circuit: No
Current - LED Trigger (Ift) (Max): 5mA
Part Status: Active
Number of Channels: 1
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 60 mA
на замовлення 583497 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 67.15 грн |
| 10+ | 42.1 грн |
| 100+ | 27.56 грн |
| MOC3052SR2M |
|
Виробник: onsemi
Description: OPTOISOLATOR 4.17KV TRIAC 6SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.18V
Voltage - Isolation: 4170Vrms
Approval Agency: UR
Current - Hold (Ih): 220µA (Typ)
Supplier Device Package: 6-SMD
Zero Crossing Circuit: No
Static dV/dt (Min): 1kV/µs
Current - LED Trigger (Ift) (Max): 10mA
Part Status: Active
Number of Channels: 1
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISOLATOR 4.17KV TRIAC 6SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.18V
Voltage - Isolation: 4170Vrms
Approval Agency: UR
Current - Hold (Ih): 220µA (Typ)
Supplier Device Package: 6-SMD
Zero Crossing Circuit: No
Static dV/dt (Min): 1kV/µs
Current - LED Trigger (Ift) (Max): 10mA
Part Status: Active
Number of Channels: 1
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 60 mA
на замовлення 1089735 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 79.36 грн |
| 10+ | 49.97 грн |
| 100+ | 32.71 грн |
| MOC3083SR2M |
|
Виробник: onsemi
Description: OPTOISOLATOR 4.17KV TRIAC 6SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.3V
Voltage - Isolation: 4170Vrms
Approval Agency: UL
Current - Hold (Ih): 500µA (Typ)
Supplier Device Package: 6-SMD
Zero Crossing Circuit: Yes
Static dV/dt (Min): 600V/µs
Current - LED Trigger (Ift) (Max): 5mA
Part Status: Active
Number of Channels: 1
Voltage - Off State: 800 V
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISOLATOR 4.17KV TRIAC 6SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.3V
Voltage - Isolation: 4170Vrms
Approval Agency: UL
Current - Hold (Ih): 500µA (Typ)
Supplier Device Package: 6-SMD
Zero Crossing Circuit: Yes
Static dV/dt (Min): 600V/µs
Current - LED Trigger (Ift) (Max): 5mA
Part Status: Active
Number of Channels: 1
Voltage - Off State: 800 V
Current - DC Forward (If) (Max): 60 mA
на замовлення 432186 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 94.62 грн |
| 10+ | 57.75 грн |
| 100+ | 42.72 грн |
| 500+ | 36.84 грн |
| FDB13AN06A0 |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 10.9A/62A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 62A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 62A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Description: MOSFET N-CH 60V 10.9A/62A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 62A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 62A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
на замовлення 5710 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 149.56 грн |
| 10+ | 119.48 грн |
| 100+ | 95.1 грн |
| FDB3652 |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 9A/61A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 61A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Description: MOSFET N-CH 100V 9A/61A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 61A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
товар відсутній
| FDC602P |
|
Виробник: onsemi
Description: MOSFET P-CH 20V 5.5A SUPERSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.5A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 10 V
Description: MOSFET P-CH 20V 5.5A SUPERSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.5A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 10 V
на замовлення 8413 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 43.49 грн |
| 10+ | 36 грн |
| 100+ | 24.92 грн |
| 500+ | 19.54 грн |
| 1000+ | 16.63 грн |
| FDC6321C |
|
Виробник: onsemi
Description: MOSFET N/P-CH 25V 0.68A SSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 680mA, 460mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Description: MOSFET N/P-CH 25V 0.68A SSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 680mA, 460mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
на замовлення 8535 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 43.49 грн |
| 10+ | 35.71 грн |
| 100+ | 24.83 грн |
| 500+ | 18.19 грн |
| 1000+ | 14.79 грн |
| FDC6324L |
|
Виробник: onsemi
Description: IC PWR SWITCH P-CH 1:1 SUPERSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 3V ~ 20V
Voltage - Supply (Vcc/Vdd): 1.5V ~ 8V
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: SuperSOT™-6
Part Status: Active
Description: IC PWR SWITCH P-CH 1:1 SUPERSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 3V ~ 20V
Voltage - Supply (Vcc/Vdd): 1.5V ~ 8V
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: SuperSOT™-6
Part Status: Active
на замовлення 2132 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 46.55 грн |
| 10+ | 39.31 грн |
| 25+ | 36.92 грн |
| 100+ | 26.24 грн |
| 250+ | 22.34 грн |
| 500+ | 21.22 грн |
| 1000+ | 15.93 грн |
| FDC6329L |
|
Виробник: onsemi
Description: IC PWR SWITCH P-CH 1:1 SUPERSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 47mOhm
Input Type: Non-Inverting
Voltage - Load: 2.5V ~ 8V
Voltage - Supply (Vcc/Vdd): 1.5V ~ 8V
Current - Output (Max): 2.5A
Ratio - Input:Output: 1:1
Supplier Device Package: SuperSOT™-6
Description: IC PWR SWITCH P-CH 1:1 SUPERSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 47mOhm
Input Type: Non-Inverting
Voltage - Load: 2.5V ~ 8V
Voltage - Supply (Vcc/Vdd): 1.5V ~ 8V
Current - Output (Max): 2.5A
Ratio - Input:Output: 1:1
Supplier Device Package: SuperSOT™-6
на замовлення 51487 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 63.33 грн |
| 10+ | 53.79 грн |
| 25+ | 50.55 грн |
| 100+ | 35.97 грн |
| 250+ | 30.61 грн |
| 500+ | 29.08 грн |
| 1000+ | 21.83 грн |
| FDC640P |
|
Виробник: onsemi
Description: MOSFET P-CH 20V 4.5A SUPERSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 10 V
Description: MOSFET P-CH 20V 4.5A SUPERSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 10 V
на замовлення 3468 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 41.2 грн |
| 10+ | 33.65 грн |
| 100+ | 23.4 грн |
| 500+ | 17.14 грн |
| 1000+ | 13.93 грн |
| FDC6420C |
|
Виробник: onsemi
Description: MOSFET N/P-CH 20V 3A/2.2A SSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A, 2.2A
Input Capacitance (Ciss) (Max) @ Vds: 324pF @ 10V
Rds On (Max) @ Id, Vgs: 70mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Description: MOSFET N/P-CH 20V 3A/2.2A SSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A, 2.2A
Input Capacitance (Ciss) (Max) @ Vds: 324pF @ 10V
Rds On (Max) @ Id, Vgs: 70mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
на замовлення 2630 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 43.49 грн |
| 10+ | 36 грн |
| 100+ | 24.92 грн |
| 500+ | 19.54 грн |
| 1000+ | 16.63 грн |
| FDC654P |
|
Виробник: onsemi
Description: MOSFET P-CH 30V 3.6A SUPERSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.6A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 298 pF @ 15 V
Description: MOSFET P-CH 30V 3.6A SUPERSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.6A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 298 pF @ 15 V
на замовлення 10965 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 35.86 грн |
| 10+ | 29.46 грн |
| 100+ | 20.48 грн |
| 500+ | 15 грн |
| 1000+ | 12.19 грн |
| FDC655BN |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 6.3A SUPERSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6.3A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 15 V
Description: MOSFET N-CH 30V 6.3A SUPERSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6.3A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 15 V
на замовлення 34858 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.81 грн |
| 11+ | 27.04 грн |
| 100+ | 18.83 грн |
| 500+ | 13.79 грн |
| 1000+ | 11.21 грн |
| FDG6306P |
|
Виробник: onsemi
Description: MOSFET 2P-CH 20V 600MA SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 600mA
Input Capacitance (Ciss) (Max) @ Vds: 114pF @ 10V
Rds On (Max) @ Id, Vgs: 420mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-88 (SC-70-6)
Description: MOSFET 2P-CH 20V 600MA SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 600mA
Input Capacitance (Ciss) (Max) @ Vds: 114pF @ 10V
Rds On (Max) @ Id, Vgs: 420mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-88 (SC-70-6)
товар відсутній
| FDG6321C |
|
Виробник: onsemi
Description: MOSFET N/P-CH 25V 0.5A SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 500mA, 410mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-88 (SC-70-6)
Description: MOSFET N/P-CH 25V 0.5A SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 500mA, 410mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-88 (SC-70-6)
на замовлення 2600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 37.39 грн |
| 10+ | 31.08 грн |
| 100+ | 21.65 грн |
| 500+ | 15.86 грн |
| 1000+ | 12.89 грн |
| FDG6332C |
|
Виробник: onsemi
Description: MOSFET N/P-CH 20V 0.7A SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 700mA, 600mA
Input Capacitance (Ciss) (Max) @ Vds: 113pF @ 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 700mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-88 (SC-70-6)
Part Status: Active
Description: MOSFET N/P-CH 20V 0.7A SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 700mA, 600mA
Input Capacitance (Ciss) (Max) @ Vds: 113pF @ 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 700mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-88 (SC-70-6)
Part Status: Active
на замовлення 8963 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 34.34 грн |
| 11+ | 28.07 грн |
| 100+ | 19.54 грн |
| 500+ | 14.32 грн |
| 1000+ | 11.64 грн |
| FDN302P |
|
Виробник: onsemi
Description: MOSFET P-CH 20V 2.4A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 2.4A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 882 pF @ 10 V
Description: MOSFET P-CH 20V 2.4A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 2.4A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 882 pF @ 10 V
на замовлення 22270 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 35.1 грн |
| 12+ | 26.53 грн |
| 100+ | 15.93 грн |
| 500+ | 13.84 грн |
| 1000+ | 9.41 грн |
| FDN304PZ |
|
Виробник: onsemi
Description: MOSFET P-CH 20V 2.4A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 2.4A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 10 V
Description: MOSFET P-CH 20V 2.4A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 2.4A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 10 V
на замовлення 45734 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 42.73 грн |
| 10+ | 35.2 грн |
| 100+ | 24.46 грн |
| 500+ | 17.92 грн |
| 1000+ | 14.57 грн |
| FDN327N |
|
Виробник: onsemi
Description: MOSFET N-CH 20V 2A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 423 pF @ 10 V
Description: MOSFET N-CH 20V 2A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 423 pF @ 10 V
на замовлення 18736 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.05 грн |
| 13+ | 24.32 грн |
| 100+ | 14.6 грн |
| 500+ | 12.68 грн |
| 1000+ | 8.62 грн |