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NTR1P02LT3G

NTR1P02LT3G onsemi

NTR1P02LT1_D-2319186.pdf Виробник: onsemi
MOSFET PFET SOT23 20V .160R
на замовлення 19966 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
11+30.25 грн
17+ 19.72 грн
100+ 8.22 грн
1000+ 5.78 грн
2500+ 5.44 грн
10000+ 4.95 грн
20000+ 4.6 грн
Мінімальне замовлення: 11
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Технічний опис NTR1P02LT3G onsemi

Description: MOSFET P-CH 20V 1.3A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta), Rds On (Max) @ Id, Vgs: 220mOhm @ 750mA, 4.5V, Power Dissipation (Max): 400mW (Ta), Vgs(th) (Max) @ Id: 1.25V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4 V, Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 5 V.

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NTR1P02LT3G NTR1P02LT3G Виробник : ONSEMI ntr1p02lt1-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; 0.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.3A
Power dissipation: 0.4W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.22Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10000 шт
товар відсутній
NTR1P02LT3G NTR1P02LT3G Виробник : onsemi ntr1p02lt1-d.pdf Description: MOSFET P-CH 20V 1.3A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 750mA, 4.5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 5 V
товар відсутній
NTR1P02LT3G NTR1P02LT3G Виробник : onsemi ntr1p02lt1-d.pdf Description: MOSFET P-CH 20V 1.3A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 750mA, 4.5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 5 V
товар відсутній
NTR1P02LT3G NTR1P02LT3G Виробник : ONSEMI ntr1p02lt1-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; 0.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.3A
Power dissipation: 0.4W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.22Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній