| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| NCP139AFCT110T2G | ONSEMI |
 Category: LDO unregulated voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.1V; 1A; WLCSP6; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 80mV Output voltage: 1.1V Output current: 1A Case: WLCSP6 Mounting: SMD Operating temperature: -40...85°C Tolerance: ±1% Number of channels: 1 Input voltage: 1.1...5.5V Manufacturer series: NCP139 |
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| FSUSB242GEVB | ONSEMI |
Category: Microchip development kits Description: Dev.kit: STM32 Type of development kit: STM32 |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
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| NCP177BMX070TCG | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 0.7V; 500mA; XDFN4; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 0.7V Output current: 0.5A Case: XDFN4 Mounting: SMD Operating temperature: -40...85°C Number of channels: 1 Input voltage: 1.6...5.5V Manufacturer series: NCP177 |
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SB5100 | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 5A; 5W; DO201; reel,tape Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 5A Power dissipation: 5W Semiconductor structure: single diode Capacitance: 380pF Case: DO201 Kind of package: reel; tape Max. forward impulse current: 150A |
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74VHC14M | ONSEMI |
 Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; VHC; 2÷5.5VDC; -40÷85°C; tube Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Mounting: SMD Case: SO14 Manufacturer series: VHC Supply voltage: 2...5.5V DC Operating temperature: -40...85°C Kind of package: tube Quiescent current: 20µA Kind of input: with Schmitt trigger |
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FQA8N90C-F109 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 5.1A; Idm: 32A; 240W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 240W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 1.9Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhanced |
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MUN5131DW1T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ Type of transistor: PNP x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.187W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ |
на замовлення 780 шт: термін постачання 21-30 дні (днів) |
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FODM8061 | ONSEMI |
Category: Optocouplers - digital output Description: Optocoupler; SMD; Ch: 1; OUT: open collector; 3.75kV; 40kV/μs Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: open collector Insulation voltage: 3.75kV Case: Mini-flat 4pin Slew rate: 40kV/μs |
на замовлення 2155 шт: термін постачання 21-30 дні (днів) |
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| FODM8061R2 | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: gate,logic; Uinsul: 3.75kV; 10Mbps Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: gate; logic Insulation voltage: 3.75kV Transfer rate: 10Mbps Case: MFP5 Slew rate: 40kV/μs Max. off-state voltage: 5V Output voltage: -500mV...7.5V Manufacturer series: FODM8061 |
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MC74VHC1G00DTT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷5.5VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: single; 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSOP5 Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape Quiescent current: 40µA Family: VHC |
на замовлення 248 шт: термін постачання 21-30 дні (днів) |
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MBRD340T4G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 3A; DPAK; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 3A Max. load current: 6A Semiconductor structure: single diode Max. forward voltage: 0.45V Case: DPAK Kind of package: reel; tape |
на замовлення 1796 шт: термін постачання 21-30 дні (днів) |
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MC74LVXT8051DTRG | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; TSSOP16; CMOS Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Type of integrated circuit: analog switch Supply voltage: 2...6V DC Case: TSSOP16 Technology: CMOS Kind of integrated circuit: demultiplexer; multiplexer Number of channels: 1 Quiescent current: 160µA |
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| FDP3652 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 43A; 150W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 43A Power dissipation: 150W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 43mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
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| NCP164AMT180TAG | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 300mA; WDFN6; SMD Operating temperature: -40...150°C Case: WDFN6 Mounting: SMD Manufacturer series: NCP164 Output voltage: 1.8V Output current: 0.3A Voltage drop: 0.255V Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 1.6...5.5V Kind of voltage regulator: fixed; LDO; linear Tolerance: ±2% |
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| NCP164ASN330T1G | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 300mA; TSOP5; SMD Operating temperature: -40...150°C Case: TSOP5 Mounting: SMD Manufacturer series: NCP164 Output voltage: 3.3V Output current: 0.3A Voltage drop: 0.17V Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 1.6...5.5V Kind of voltage regulator: fixed; LDO; linear Tolerance: ±2% |
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| NCP164ASNADJT1G | ONSEMI |
Category: LDO regulated voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 300mA; TSOP5; SMD Operating temperature: -40...150°C Case: TSOP5 Mounting: SMD Manufacturer series: NCP164 Output current: 0.3A Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 1.6...5.5V Kind of voltage regulator: adjustable; LDO; linear Tolerance: ±2% |
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| ADD5051-868-2-GEVK | ONSEMI |
Category: Development kits - others Description: Expansion board; Comp: AX5051,AX8052F100 Type of accessories for development kits: expansion board Components: AX5051; AX8052F100 |
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| NCP4204MNTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC Mounting: SMD Type of integrated circuit: PMIC |
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LM285D-2.5R2G | ONSEMI |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.5V; ±1.5%; SO8; reel,tape; 20mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±1.5% Mounting: SMD Case: SO8 Operating temperature: -40...85°C Kind of package: reel; tape Maximum output current: 20mA |
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MC100LVELT20DG | ONSEMI |
Category: Level translators Description: IC: digital; logic level voltage translator; Ch: 1; SMD; SO8; tube Mounting: SMD Operating temperature: -40...85°C Manufacturer series: 100LVELT Number of outputs: 2 Kind of package: tube Number of inputs: 1 Case: SO8 Kind of integrated circuit: logic level voltage translator Type of integrated circuit: digital Number of channels: 1 |
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| BSV52 | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 12V; 0.2A; 0.225W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 12V Collector current: 0.2A Power dissipation: 0.225W Case: SOT23 Current gain: 25...120 Mounting: SMD Kind of package: reel; tape Frequency: 400MHz |
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UF4007 | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; Ir: 75uA Case: DO41 Mounting: THT Capacitance: 17pF Max. off-state voltage: 1kV Max. forward voltage: 1.7V Load current: 1A Reverse recovery time: 75ns Max. forward impulse current: 30A Leakage current: 75µA Power dissipation: 2.08W Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: fast switching Semiconductor structure: single diode |
на замовлення 4066 шт: термін постачання 21-30 дні (днів) |
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MOC8204M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 400V Mounting: THT Case: DIP6 Insulation voltage: 4.17kV Kind of output: transistor CTR@If: 20%@10mA Type of optocoupler: optocoupler Max. off-state voltage: 6V Collector-emitter voltage: 400V Turn-on time: 5µs Turn-off time: 5µs Number of channels: 1 |
на замовлення 1744 шт: термін постачання 21-30 дні (днів) |
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NTE4151PT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.76A; 313mW; SC89 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.76A Power dissipation: 313mW Case: SC89 Gate-source voltage: ±6V On-state resistance: 1Ω Mounting: SMD Gate charge: 2.1nC Kind of package: reel; tape Kind of channel: enhanced |
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FQP65N06 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 46.1A; Idm: 260A; 150W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 46.1A Pulsed drain current: 260A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±25V On-state resistance: 16mΩ Mounting: THT Gate charge: 65nC Kind of package: tube Kind of channel: enhanced |
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MJF18004G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 450V; 5A; 35W; TO220FP Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 450V Collector current: 5A Power dissipation: 35W Case: TO220FP Current gain: 6...34 Mounting: THT Kind of package: tube Frequency: 13MHz |
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1N5937BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 3W; 33V; reel,tape; CASE59; single diode; 1uA Mounting: THT Leakage current: 1µA Zener voltage: 33V Semiconductor structure: single diode Tolerance: ±5% Power dissipation: 3W Case: CASE59 Kind of package: reel; tape Type of diode: Zener |
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MMBZ5230BLT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.225W; 4.7V; 20mA; SMD; reel,tape; SOT23; Ir: 5uA Mounting: SMD Leakage current: 5µA Zener current: 20mA Zener voltage: 4.7V Semiconductor structure: single diode Power dissipation: 0.225W Kind of package: reel; tape Type of diode: Zener Tolerance: ±5% Case: SOT23 |
на замовлення 61 шт: термін постачання 21-30 дні (днів) |
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MUN5111DW1T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 10kΩ Type of transistor: PNP x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.187W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
на замовлення 2090 шт: термін постачання 21-30 дні (днів) |
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MUN5111T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.202W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.202W Case: SC70; SOT323 Current gain: 35...60 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
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MUN5115DW1T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; 10kΩ Type of transistor: PNP x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.187W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ |
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MUN5335DW1T1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.187W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ |
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SMUN5111DW1T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 10kΩ; R2: 10kΩ Type of transistor: PNP x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 10kΩ |
на замовлення 2930 шт: термін постачання 21-30 дні (днів) |
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SMUN5111T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.31W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 10kΩ |
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SMUN5114DW1T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 10kΩ; R2: 47kΩ Type of transistor: PNP x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
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SMUN5115DW1T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.25W; 10kΩ Type of transistor: PNP x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry |
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MMBZ5239BLT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.225W; 9.1V; 20mA; SMD; reel,tape; SOT23; Ir: 3uA Type of diode: Zener Power dissipation: 0.225W Zener voltage: 9.1V Zener current: 20mA Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 3µA |
на замовлення 2975 шт: термін постачання 21-30 дні (днів) |
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BD244A | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 6A; 65W; TO220AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 6A Power dissipation: 65W Case: TO220AB Current gain: 30 Mounting: THT Kind of package: tube |
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IRF530A | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 9.9A; 55W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 9.9A Power dissipation: 55W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhanced |
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GBU8K | ONSEMI |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 8A Max. forward impulse current: 200A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
на замовлення 588 шт: термін постачання 21-30 дні (днів) |
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| NCP511SN15T1G | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.15A; TSOP5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.245V Output voltage: 1.5V Output current: 0.15A Case: TSOP5 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 2.5...6V Manufacturer series: NCP511 |
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| NCP511SN28T1G | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; TSOP5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.1V Output voltage: 2.8V Output current: 0.15A Case: TSOP5 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 3.8...6V Manufacturer series: NCP511 |
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| FUSB252GEVB | ONSEMI |
Category: Microchip development kits Description: Dev.kit: evaluation Type of development kit: evaluation |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
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2N6387G | ONSEMI |
Category: NPN THT Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 60V; 10A; 2W; TO220AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 60V Collector current: 10A Power dissipation: 2W Case: TO220AB Mounting: THT Kind of package: tube |
на замовлення 37 шт: термін постачання 21-30 дні (днів) |
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| KSC2752OSTU | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 400V; 0.5A; 1W; TO126ISO Case: TO126ISO Mounting: THT Kind of package: tube Power dissipation: 1W Collector-emitter voltage: 400V Collector current: 0.5A Polarisation: bipolar Current gain: 30...60 Type of transistor: NPN Pulsed collector current: 1A |
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| NCP511SN30T1G | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.15A; TSOP5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.1V Output voltage: 3V Output current: 0.15A Case: TSOP5 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 4...6V Manufacturer series: NCP511 |
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| CAV24C16YE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 2.5÷5.5V; 400kHz Operating temperature: -40...125°C Mounting: SMD Kind of package: reel; tape Kind of interface: serial Memory: 16kb EEPROM Case: TSSOP8 Operating voltage: 2.5...5.5V Type of integrated circuit: EEPROM memory Interface: I2C Kind of memory: EEPROM Memory organisation: 2048x8bit Access time: 900ns Clock frequency: 400kHz |
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BZX84C47LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 47V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 47V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode |
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BZX84C47LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 47V; SMD; reel,tape; SOT23; single diode; 0.05uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 47V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 50nA |
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2N6292G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 80V; 7A; 40W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 7A Power dissipation: 40W Case: TO220AB Mounting: THT Kind of package: tube Frequency: 4MHz |
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| FDB088N08 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 60A; Idm: 340A; 160W; D2PAK Mounting: SMD Case: D2PAK Kind of package: reel; tape Power dissipation: 160W Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 340A Drain-source voltage: 75V Drain current: 60A On-state resistance: 8.8mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 118nC |
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| NLSX0102FCT1G | ONSEMI |
Category: Level translators Description: IC: digital; 2bit,translator; Ch: 2; CMOS; 1.65÷5.5VDC; SMD Mounting: SMD Case: flip chip8 Operating temperature: -40...85°C Kind of package: reel; tape Technology: CMOS Kind of integrated circuit: 2bit; translator Supply voltage: 1.65...5.5V DC Type of integrated circuit: digital Number of channels: 2 |
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| NLSX0102FCT2G | ONSEMI |
Category: Level translators Description: IC: digital; 2bit,translator; Ch: 2; CMOS; 1.65÷5.5VDC; SMD Mounting: SMD Case: flip chip8 Operating temperature: -40...85°C Kind of package: reel; tape Technology: CMOS Kind of integrated circuit: 2bit; translator Supply voltage: 1.65...5.5V DC Type of integrated circuit: digital Number of channels: 2 |
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 |
1N914TR | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 100V; 0.3A; reel,tape; DO35; 4ns Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: single diode Case: DO35 Kind of package: reel; tape |
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| NRVUS360VBT3G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 3A; 75ns; SMB; Ufmax: 1.25V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 3A Reverse recovery time: 75ns Semiconductor structure: single diode Max. forward voltage: 1.25V Case: SMB Kind of package: reel; tape Max. forward impulse current: 100A Application: automotive industry |
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| NRVBS360T3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 3A; SMC; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.63V Case: SMC Kind of package: reel; tape Max. forward impulse current: 125A Application: automotive industry |
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| NRVTS360ETFSTAG | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 3A; WDFN8; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 3A Max. load current: 6A Semiconductor structure: single diode Max. forward voltage: 0.9V Case: WDFN8 Kind of package: reel; tape Max. forward impulse current: 50A Application: automotive industry |
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| NRVTS360ETFSWFTAG | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 3A; WDFN8; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 3A Max. load current: 6A Semiconductor structure: single diode Max. forward voltage: 0.9V Case: WDFN8 Kind of package: reel; tape Max. forward impulse current: 50A Application: automotive industry |
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 |
GBU4K | ONSEMI |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 150A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 4A Max. forward impulse current: 150A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
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| BAR43S | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; 5ns; SOT23; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Reverse recovery time: 5ns Semiconductor structure: double series Case: SOT23 Kind of package: reel; tape Max. forward impulse current: 0.75A Power dissipation: 0.29W |
товар відсутній |
| NCP139AFCT110T2G |
|
Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.1V; 1A; WLCSP6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 80mV
Output voltage: 1.1V
Output current: 1A
Case: WLCSP6
Mounting: SMD
Operating temperature: -40...85°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.1...5.5V
Manufacturer series: NCP139
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.1V; 1A; WLCSP6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 80mV
Output voltage: 1.1V
Output current: 1A
Case: WLCSP6
Mounting: SMD
Operating temperature: -40...85°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.1...5.5V
Manufacturer series: NCP139
товар відсутній
| FSUSB242GEVB |
|
Виробник: ONSEMI
Category: Microchip development kits
Description: Dev.kit: STM32
Type of development kit: STM32
Category: Microchip development kits
Description: Dev.kit: STM32
Type of development kit: STM32
на замовлення 3 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 8551.26 грн |
| NCP177BMX070TCG |
|
Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.7V; 500mA; XDFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 0.7V
Output current: 0.5A
Case: XDFN4
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 1.6...5.5V
Manufacturer series: NCP177
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.7V; 500mA; XDFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 0.7V
Output current: 0.5A
Case: XDFN4
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 1.6...5.5V
Manufacturer series: NCP177
товар відсутній
| SB5100 |
|
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5A; 5W; DO201; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 5A
Power dissipation: 5W
Semiconductor structure: single diode
Capacitance: 380pF
Case: DO201
Kind of package: reel; tape
Max. forward impulse current: 150A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5A; 5W; DO201; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 5A
Power dissipation: 5W
Semiconductor structure: single diode
Capacitance: 380pF
Case: DO201
Kind of package: reel; tape
Max. forward impulse current: 150A
товар відсутній
| 74VHC14M | |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; VHC; 2÷5.5VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 20µA
Kind of input: with Schmitt trigger
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; VHC; 2÷5.5VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 20µA
Kind of input: with Schmitt trigger
товар відсутній
| FQA8N90C-F109 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5.1A; Idm: 32A; 240W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 240W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5.1A; Idm: 32A; 240W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 240W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| MUN5131DW1T1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
на замовлення 780 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 90+ | 4.53 грн |
| 150+ | 2.47 грн |
| 380+ | 2.25 грн |
| 500+ | 2.19 грн |
| FODM8061 |
|
Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: open collector; 3.75kV; 40kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: open collector
Insulation voltage: 3.75kV
Case: Mini-flat 4pin
Slew rate: 40kV/μs
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: open collector; 3.75kV; 40kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: open collector
Insulation voltage: 3.75kV
Case: Mini-flat 4pin
Slew rate: 40kV/μs
на замовлення 2155 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 216.56 грн |
| 5+ | 136.48 грн |
| 8+ | 115.43 грн |
| 21+ | 108.89 грн |
| 100+ | 104.54 грн |
| FODM8061R2 |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: gate,logic; Uinsul: 3.75kV; 10Mbps
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: gate; logic
Insulation voltage: 3.75kV
Transfer rate: 10Mbps
Case: MFP5
Slew rate: 40kV/μs
Max. off-state voltage: 5V
Output voltage: -500mV...7.5V
Manufacturer series: FODM8061
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: gate,logic; Uinsul: 3.75kV; 10Mbps
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: gate; logic
Insulation voltage: 3.75kV
Transfer rate: 10Mbps
Case: MFP5
Slew rate: 40kV/μs
Max. off-state voltage: 5V
Output voltage: -500mV...7.5V
Manufacturer series: FODM8061
товар відсутній
| MC74VHC1G00DTT1G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSOP5
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: VHC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSOP5
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: VHC
на замовлення 248 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 38+ | 10.48 грн |
| 47+ | 7.84 грн |
| 100+ | 5.87 грн |
| MBRD340T4G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 3A; DPAK; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Max. load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Case: DPAK
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 3A; DPAK; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Max. load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Case: DPAK
Kind of package: reel; tape
на замовлення 1796 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 38.54 грн |
| 25+ | 33.1 грн |
| 34+ | 25.19 грн |
| 94+ | 23.81 грн |
| MC74LVXT8051DTRG |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; TSSOP16; CMOS
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Type of integrated circuit: analog switch
Supply voltage: 2...6V DC
Case: TSSOP16
Technology: CMOS
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 1
Quiescent current: 160µA
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; TSSOP16; CMOS
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Type of integrated circuit: analog switch
Supply voltage: 2...6V DC
Case: TSSOP16
Technology: CMOS
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 1
Quiescent current: 160µA
товар відсутній
| FDP3652 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; 150W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; 150W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| NCP164AMT180TAG |
|
Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 300mA; WDFN6; SMD
Operating temperature: -40...150°C
Case: WDFN6
Mounting: SMD
Manufacturer series: NCP164
Output voltage: 1.8V
Output current: 0.3A
Voltage drop: 0.255V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 1.6...5.5V
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±2%
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 300mA; WDFN6; SMD
Operating temperature: -40...150°C
Case: WDFN6
Mounting: SMD
Manufacturer series: NCP164
Output voltage: 1.8V
Output current: 0.3A
Voltage drop: 0.255V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 1.6...5.5V
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±2%
товар відсутній
| NCP164ASN330T1G |
|
Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 300mA; TSOP5; SMD
Operating temperature: -40...150°C
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP164
Output voltage: 3.3V
Output current: 0.3A
Voltage drop: 0.17V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 1.6...5.5V
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±2%
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 300mA; TSOP5; SMD
Operating temperature: -40...150°C
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP164
Output voltage: 3.3V
Output current: 0.3A
Voltage drop: 0.17V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 1.6...5.5V
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±2%
товар відсутній
| NCP164ASNADJT1G |
|
Виробник: ONSEMI
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 300mA; TSOP5; SMD
Operating temperature: -40...150°C
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP164
Output current: 0.3A
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 1.6...5.5V
Kind of voltage regulator: adjustable; LDO; linear
Tolerance: ±2%
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 300mA; TSOP5; SMD
Operating temperature: -40...150°C
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP164
Output current: 0.3A
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 1.6...5.5V
Kind of voltage regulator: adjustable; LDO; linear
Tolerance: ±2%
товар відсутній
| ADD5051-868-2-GEVK |
|
Виробник: ONSEMI
Category: Development kits - others
Description: Expansion board; Comp: AX5051,AX8052F100
Type of accessories for development kits: expansion board
Components: AX5051; AX8052F100
Category: Development kits - others
Description: Expansion board; Comp: AX5051,AX8052F100
Type of accessories for development kits: expansion board
Components: AX5051; AX8052F100
товар відсутній
| NCP4204MNTXG |
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC
Mounting: SMD
Type of integrated circuit: PMIC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC
Mounting: SMD
Type of integrated circuit: PMIC
товар відсутній
| LM285D-2.5R2G |
|
Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1.5%; SO8; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1.5%
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 20mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1.5%; SO8; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1.5%
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 20mA
товар відсутній
| MC100LVELT20DG |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 1; SMD; SO8; tube
Mounting: SMD
Operating temperature: -40...85°C
Manufacturer series: 100LVELT
Number of outputs: 2
Kind of package: tube
Number of inputs: 1
Case: SO8
Kind of integrated circuit: logic level voltage translator
Type of integrated circuit: digital
Number of channels: 1
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 1; SMD; SO8; tube
Mounting: SMD
Operating temperature: -40...85°C
Manufacturer series: 100LVELT
Number of outputs: 2
Kind of package: tube
Number of inputs: 1
Case: SO8
Kind of integrated circuit: logic level voltage translator
Type of integrated circuit: digital
Number of channels: 1
товар відсутній
| BSV52 |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 0.2A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23
Current gain: 25...120
Mounting: SMD
Kind of package: reel; tape
Frequency: 400MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 0.2A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23
Current gain: 25...120
Mounting: SMD
Kind of package: reel; tape
Frequency: 400MHz
товар відсутній
| UF4007 |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; Ir: 75uA
Case: DO41
Mounting: THT
Capacitance: 17pF
Max. off-state voltage: 1kV
Max. forward voltage: 1.7V
Load current: 1A
Reverse recovery time: 75ns
Max. forward impulse current: 30A
Leakage current: 75µA
Power dissipation: 2.08W
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: fast switching
Semiconductor structure: single diode
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; Ir: 75uA
Case: DO41
Mounting: THT
Capacitance: 17pF
Max. off-state voltage: 1kV
Max. forward voltage: 1.7V
Load current: 1A
Reverse recovery time: 75ns
Max. forward impulse current: 30A
Leakage current: 75µA
Power dissipation: 2.08W
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: fast switching
Semiconductor structure: single diode
на замовлення 4066 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 29.71 грн |
| 17+ | 21.78 грн |
| 21+ | 17.93 грн |
| 25+ | 15.24 грн |
| 100+ | 10.02 грн |
| 128+ | 6.68 грн |
| 353+ | 6.32 грн |
| MOC8204M |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 400V
Mounting: THT
Case: DIP6
Insulation voltage: 4.17kV
Kind of output: transistor
CTR@If: 20%@10mA
Type of optocoupler: optocoupler
Max. off-state voltage: 6V
Collector-emitter voltage: 400V
Turn-on time: 5µs
Turn-off time: 5µs
Number of channels: 1
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 400V
Mounting: THT
Case: DIP6
Insulation voltage: 4.17kV
Kind of output: transistor
CTR@If: 20%@10mA
Type of optocoupler: optocoupler
Max. off-state voltage: 6V
Collector-emitter voltage: 400V
Turn-on time: 5µs
Turn-off time: 5µs
Number of channels: 1
на замовлення 1744 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 73.49 грн |
| 7+ | 54.74 грн |
| 22+ | 39.64 грн |
| 60+ | 37.46 грн |
| NTE4151PT1G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.76A; 313mW; SC89
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.76A
Power dissipation: 313mW
Case: SC89
Gate-source voltage: ±6V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 2.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.76A; 313mW; SC89
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.76A
Power dissipation: 313mW
Case: SC89
Gate-source voltage: ±6V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 2.1nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FQP65N06 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 46.1A; Idm: 260A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 46.1A
Pulsed drain current: 260A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 46.1A; Idm: 260A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 46.1A
Pulsed drain current: 260A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| MJF18004G | |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 450V; 5A; 35W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 450V
Collector current: 5A
Power dissipation: 35W
Case: TO220FP
Current gain: 6...34
Mounting: THT
Kind of package: tube
Frequency: 13MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 450V; 5A; 35W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 450V
Collector current: 5A
Power dissipation: 35W
Case: TO220FP
Current gain: 6...34
Mounting: THT
Kind of package: tube
Frequency: 13MHz
товар відсутній
| 1N5937BRLG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 33V; reel,tape; CASE59; single diode; 1uA
Mounting: THT
Leakage current: 1µA
Zener voltage: 33V
Semiconductor structure: single diode
Tolerance: ±5%
Power dissipation: 3W
Case: CASE59
Kind of package: reel; tape
Type of diode: Zener
Category: THT Zener diodes
Description: Diode: Zener; 3W; 33V; reel,tape; CASE59; single diode; 1uA
Mounting: THT
Leakage current: 1µA
Zener voltage: 33V
Semiconductor structure: single diode
Tolerance: ±5%
Power dissipation: 3W
Case: CASE59
Kind of package: reel; tape
Type of diode: Zener
товар відсутній
| MMBZ5230BLT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.225W; 4.7V; 20mA; SMD; reel,tape; SOT23; Ir: 5uA
Mounting: SMD
Leakage current: 5µA
Zener current: 20mA
Zener voltage: 4.7V
Semiconductor structure: single diode
Power dissipation: 0.225W
Kind of package: reel; tape
Type of diode: Zener
Tolerance: ±5%
Case: SOT23
Category: SMD Zener diodes
Description: Diode: Zener; 0.225W; 4.7V; 20mA; SMD; reel,tape; SOT23; Ir: 5uA
Mounting: SMD
Leakage current: 5µA
Zener current: 20mA
Zener voltage: 4.7V
Semiconductor structure: single diode
Power dissipation: 0.225W
Kind of package: reel; tape
Type of diode: Zener
Tolerance: ±5%
Case: SOT23
на замовлення 61 шт:
термін постачання 21-30 дні (днів)| MUN5111DW1T1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 10kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 10kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
на замовлення 2090 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 60+ | 6.8 грн |
| 120+ | 3.14 грн |
| 380+ | 2.26 грн |
| 1040+ | 2.13 грн |
| MUN5111T1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.202W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.202W
Case: SC70; SOT323
Current gain: 35...60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.202W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.202W
Case: SC70; SOT323
Current gain: 35...60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
товар відсутній
| MUN5115DW1T1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; 10kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; 10kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
товар відсутній
| MUN5335DW1T1G |
|
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
товар відсутній
| SMUN5111DW1T1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 10kΩ; R2: 10kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 10kΩ; R2: 10kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
на замовлення 2930 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 35+ | 12.35 грн |
| 40+ | 10.16 грн |
| 100+ | 9 грн |
| 110+ | 8.06 грн |
| 295+ | 7.62 грн |
| SMUN5111T1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
товар відсутній
| SMUN5114DW1T1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 10kΩ; R2: 47kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 10kΩ; R2: 47kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
товар відсутній
| SMUN5115DW1T1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.25W; 10kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.25W; 10kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
товар відсутній
| MMBZ5239BLT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.225W; 9.1V; 20mA; SMD; reel,tape; SOT23; Ir: 3uA
Type of diode: Zener
Power dissipation: 0.225W
Zener voltage: 9.1V
Zener current: 20mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.225W; 9.1V; 20mA; SMD; reel,tape; SOT23; Ir: 3uA
Type of diode: Zener
Power dissipation: 0.225W
Zener voltage: 9.1V
Zener current: 20mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
на замовлення 2975 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 150+ | 2.88 грн |
| 225+ | 1.75 грн |
| 500+ | 1.58 грн |
| 725+ | 1.21 грн |
| 1950+ | 1.15 грн |
| BD244A |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 6A; 65W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 6A
Power dissipation: 65W
Case: TO220AB
Current gain: 30
Mounting: THT
Kind of package: tube
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 6A; 65W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 6A
Power dissipation: 65W
Case: TO220AB
Current gain: 30
Mounting: THT
Kind of package: tube
товар відсутній
| IRF530A |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.9A; 55W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.9A
Power dissipation: 55W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.9A; 55W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.9A
Power dissipation: 55W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| GBU8K |
|
Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
на замовлення 588 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 107.11 грн |
| 5+ | 89.29 грн |
| 13+ | 68.97 грн |
| 35+ | 65.34 грн |
| NCP511SN15T1G |
|
Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.15A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.245V
Output voltage: 1.5V
Output current: 0.15A
Case: TSOP5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...6V
Manufacturer series: NCP511
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.15A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.245V
Output voltage: 1.5V
Output current: 0.15A
Case: TSOP5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...6V
Manufacturer series: NCP511
товар відсутній
| NCP511SN28T1G |
|
Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.1V
Output voltage: 2.8V
Output current: 0.15A
Case: TSOP5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.8...6V
Manufacturer series: NCP511
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.1V
Output voltage: 2.8V
Output current: 0.15A
Case: TSOP5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.8...6V
Manufacturer series: NCP511
товар відсутній
| FUSB252GEVB |
|
Виробник: ONSEMI
Category: Microchip development kits
Description: Dev.kit: evaluation
Type of development kit: evaluation
Category: Microchip development kits
Description: Dev.kit: evaluation
Type of development kit: evaluation
на замовлення 10 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 8626.31 грн |
| 4+ | 6920.49 грн |
| 2N6387G |
|
Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 10A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 2W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 10A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 2W
Case: TO220AB
Mounting: THT
Kind of package: tube
на замовлення 37 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 88.34 грн |
| 6+ | 64.61 грн |
| 10+ | 50.74 грн |
| 19+ | 44.94 грн |
| KSC2752OSTU |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 0.5A; 1W; TO126ISO
Case: TO126ISO
Mounting: THT
Kind of package: tube
Power dissipation: 1W
Collector-emitter voltage: 400V
Collector current: 0.5A
Polarisation: bipolar
Current gain: 30...60
Type of transistor: NPN
Pulsed collector current: 1A
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 0.5A; 1W; TO126ISO
Case: TO126ISO
Mounting: THT
Kind of package: tube
Power dissipation: 1W
Collector-emitter voltage: 400V
Collector current: 0.5A
Polarisation: bipolar
Current gain: 30...60
Type of transistor: NPN
Pulsed collector current: 1A
товар відсутній
| NCP511SN30T1G |
|
Виробник: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.15A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.1V
Output voltage: 3V
Output current: 0.15A
Case: TSOP5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4...6V
Manufacturer series: NCP511
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.15A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.1V
Output voltage: 3V
Output current: 0.15A
Case: TSOP5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4...6V
Manufacturer series: NCP511
товар відсутній
| CAV24C16YE-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 2.5÷5.5V; 400kHz
Operating temperature: -40...125°C
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Memory: 16kb EEPROM
Case: TSSOP8
Operating voltage: 2.5...5.5V
Type of integrated circuit: EEPROM memory
Interface: I2C
Kind of memory: EEPROM
Memory organisation: 2048x8bit
Access time: 900ns
Clock frequency: 400kHz
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 2.5÷5.5V; 400kHz
Operating temperature: -40...125°C
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Memory: 16kb EEPROM
Case: TSSOP8
Operating voltage: 2.5...5.5V
Type of integrated circuit: EEPROM memory
Interface: I2C
Kind of memory: EEPROM
Memory organisation: 2048x8bit
Access time: 900ns
Clock frequency: 400kHz
товар відсутній
| BZX84C47LT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 47V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 47V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
товар відсутній
| BZX84C47LT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 47V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 47V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
товар відсутній
| 2N6292G | |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 7A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 7A
Power dissipation: 40W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 4MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 7A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 7A
Power dissipation: 40W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 4MHz
товар відсутній
| FDB088N08 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 60A; Idm: 340A; 160W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Power dissipation: 160W
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 340A
Drain-source voltage: 75V
Drain current: 60A
On-state resistance: 8.8mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 118nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 60A; Idm: 340A; 160W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Power dissipation: 160W
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 340A
Drain-source voltage: 75V
Drain current: 60A
On-state resistance: 8.8mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 118nC
товар відсутній
| NLSX0102FCT1G |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; 2bit,translator; Ch: 2; CMOS; 1.65÷5.5VDC; SMD
Mounting: SMD
Case: flip chip8
Operating temperature: -40...85°C
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: 2bit; translator
Supply voltage: 1.65...5.5V DC
Type of integrated circuit: digital
Number of channels: 2
Category: Level translators
Description: IC: digital; 2bit,translator; Ch: 2; CMOS; 1.65÷5.5VDC; SMD
Mounting: SMD
Case: flip chip8
Operating temperature: -40...85°C
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: 2bit; translator
Supply voltage: 1.65...5.5V DC
Type of integrated circuit: digital
Number of channels: 2
товар відсутній
| NLSX0102FCT2G |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; 2bit,translator; Ch: 2; CMOS; 1.65÷5.5VDC; SMD
Mounting: SMD
Case: flip chip8
Operating temperature: -40...85°C
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: 2bit; translator
Supply voltage: 1.65...5.5V DC
Type of integrated circuit: digital
Number of channels: 2
Category: Level translators
Description: IC: digital; 2bit,translator; Ch: 2; CMOS; 1.65÷5.5VDC; SMD
Mounting: SMD
Case: flip chip8
Operating temperature: -40...85°C
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: 2bit; translator
Supply voltage: 1.65...5.5V DC
Type of integrated circuit: digital
Number of channels: 2
товар відсутній
| 1N914TR |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; reel,tape; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: DO35
Kind of package: reel; tape
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; reel,tape; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: DO35
Kind of package: reel; tape
товар відсутній
| NRVUS360VBT3G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 75ns; SMB; Ufmax: 1.25V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Max. forward voltage: 1.25V
Case: SMB
Kind of package: reel; tape
Max. forward impulse current: 100A
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 75ns; SMB; Ufmax: 1.25V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Max. forward voltage: 1.25V
Case: SMB
Kind of package: reel; tape
Max. forward impulse current: 100A
Application: automotive industry
товар відсутній
| NRVBS360T3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; SMC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.63V
Case: SMC
Kind of package: reel; tape
Max. forward impulse current: 125A
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; SMC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.63V
Case: SMC
Kind of package: reel; tape
Max. forward impulse current: 125A
Application: automotive industry
товар відсутній
| NRVTS360ETFSTAG |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; WDFN8; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Max. load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Case: WDFN8
Kind of package: reel; tape
Max. forward impulse current: 50A
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; WDFN8; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Max. load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Case: WDFN8
Kind of package: reel; tape
Max. forward impulse current: 50A
Application: automotive industry
товар відсутній
| NRVTS360ETFSWFTAG |
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; WDFN8; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Max. load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Case: WDFN8
Kind of package: reel; tape
Max. forward impulse current: 50A
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; WDFN8; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Max. load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Case: WDFN8
Kind of package: reel; tape
Max. forward impulse current: 50A
Application: automotive industry
товар відсутній
| GBU4K |
|
Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
товар відсутній
| BAR43S |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; 5ns; SOT23; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Reverse recovery time: 5ns
Semiconductor structure: double series
Case: SOT23
Kind of package: reel; tape
Max. forward impulse current: 0.75A
Power dissipation: 0.29W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; 5ns; SOT23; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Reverse recovery time: 5ns
Semiconductor structure: double series
Case: SOT23
Kind of package: reel; tape
Max. forward impulse current: 0.75A
Power dissipation: 0.29W
товар відсутній