| Фото | Назва | Виробник | Інформація |
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MC74ACT04DTR2G | ONSEMI |
 Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷6VDC; -40÷85°C; 40uA Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Mounting: SMD Case: TSSOP14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 40µA Family: ACT |
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FCH104N60F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 357W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Power dissipation: 357W Case: TO247 Gate-source voltage: ±20V On-state resistance: 0.104Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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| FCH104N60F-F085 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 357W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Power dissipation: 357W Case: TO247 Gate-source voltage: ±20V On-state resistance: 0.104Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Application: automotive industry |
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| FDD6670A | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 60A; 63W; DPAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 60A Power dissipation: 63W Case: DPAK Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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AFGB40T65SQDN | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 40A; 119W; D2PAK; automotive industry Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 119W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: SMD Gate charge: 76nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Application: automotive industry |
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| NCP1055ST100T3G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; AC/DC switcher,PWM controller; 7.5÷10V; SOT223; flyback Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 680mA Mounting: SMD Case: SOT223 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C On-state resistance: 15Ω Operating voltage: 7.5...10V |
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| NCP1055ST136T3G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; AC/DC switcher,PWM controller; 7.5÷10V; SOT223; flyback Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 680mA Mounting: SMD Case: SOT223 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C On-state resistance: 15Ω Operating voltage: 7.5...10V |
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| NCP1076STBT3G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; AC/DC switcher,PWM controller; 6.3÷10V; SOT223; flyback Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.65A Frequency: 90...110kHz Mounting: SMD Case: SOT223 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C On-state resistance: 6.9Ω Operating voltage: 6.3...10V |
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TIP122G | ONSEMI |
Category: NPN THT Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 100V; 5A; 2W; TO220AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 5A Power dissipation: 2W Case: TO220AB Mounting: THT Kind of package: tube |
на замовлення 56 шт: термін постачання 21-30 дні (днів) |
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MBR40250G | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 250V; 40A; TO220AC; Ufmax: 0.86V Type of diode: Schottky rectifying Max. forward impulse current: 150A Semiconductor structure: single diode Mounting: THT Case: TO220AC Max. off-state voltage: 250V Kind of package: tube Heatsink thickness: 1.14...1.39mm Max. load current: 80A Max. forward voltage: 0.86V Load current: 40A |
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MBR40250TG | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 250V; 40A; TO220-3; Ufmax: 0.86V Type of diode: Schottky rectifying Max. forward impulse current: 150A Semiconductor structure: single diode Mounting: THT Case: TO220-3 Max. off-state voltage: 250V Kind of package: tube Heatsink thickness: 1.14...1.39mm Max. load current: 80A Max. forward voltage: 0.86V Load current: 40A |
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MJ11015G | ONSEMI |
 Category: PNP THT Darlington transistorsDescription: Transistor: PNP; bipolar; Darlington; 120V; 30A; 200W; TO3 Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 120V Collector current: 30A Power dissipation: 200W Case: TO3 Mounting: THT Kind of package: in-tray |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
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| FDP8N50NZ | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; 130W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 4.8A Power dissipation: 130W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.85Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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| FDA28N50 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 17A; Idm: 112A; 310W; TO3PN Type of transistor: N-MOSFET Technology: DMOS; UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 17A Pulsed drain current: 112A Power dissipation: 310W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 155mΩ Mounting: THT Gate charge: 105nC Kind of package: tube Kind of channel: enhanced |
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1N5359BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 24V; bulk; CASE017AA; single diode; 0.5uA Type of diode: Zener Power dissipation: 5W Zener voltage: 24V Kind of package: bulk Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA |
на замовлення 925 шт: термін постачання 21-30 дні (днів) |
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1N5359BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 24V; reel,tape; CASE017AA; single diode; 0.5uA Type of diode: Zener Power dissipation: 5W Zener voltage: 24V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA |
на замовлення 332 шт: термін постачання 21-30 дні (днів) |
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FST3257MTCX | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: analog switch; bus switch,demultiplexer,multiplexer; Ch: 4 Technology: CMOS; TTL Mounting: SMD Case: TSSOP20 Kind of package: reel; tape Operating temperature: -40...85°C Kind of integrated circuit: bus switch; demultiplexer; multiplexer Supply voltage: 3...5.5V DC Type of integrated circuit: analog switch Number of channels: 4 Quiescent current: 3µA |
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| 74FST3257MNTWG | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; demultiplexer,multiplexer; Ch: 4; SMD; QFN16; 4÷5.5VDC Mounting: SMD Case: QFN16 Kind of package: reel; tape Operating temperature: -40...85°C Kind of integrated circuit: demultiplexer; multiplexer Supply voltage: 4...5.5V DC Type of integrated circuit: digital Number of channels: 4 Quiescent current: 3µA |
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FST3253MTCX | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: analog switch; bus switch,demultiplexer,multiplexer; Ch: 2 Type of integrated circuit: analog switch Kind of integrated circuit: bus switch; demultiplexer; multiplexer Number of channels: 2 Technology: TTL Mounting: SMD Case: TSSOP16 Supply voltage: 4...5.5V DC Kind of package: reel; tape Operating temperature: -40...85°C Quiescent current: 3µA |
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HGT1S10N120BNST | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1.2kV; 17A; 298W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 17A Power dissipation: 298W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: SMD Gate charge: 150nC Kind of package: reel; tape |
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MC33151DG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: SO8 Output current: -1.5...1.5A Output voltage: 0.8...11.2V Number of channels: 2 Supply voltage: 6.5...18V DC Mounting: SMD Operating temperature: -40...85°C Impulse rise time: 30ns Pulse fall time: 30ns Kind of package: tube Kind of output: inverting Protection: undervoltage UVP |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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MC33151PG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; DIP8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: DIP8 Output current: -1.5...1.5A Output voltage: 0.8...11.2V Number of channels: 2 Supply voltage: 6.5...18V DC Mounting: THT Operating temperature: -40...85°C Impulse rise time: 30ns Pulse fall time: 30ns Kind of package: tube Kind of output: inverting Protection: undervoltage UVP |
на замовлення 94 шт: термін постачання 21-30 дні (днів) |
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MOC3022VM | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; triac; DIP6; Ch: 1; MOC302XM Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: DIP6 Mounting: THT Number of channels: 1 Manufacturer series: MOC302XM |
на замовлення 878 шт: термін постачання 21-30 дні (днів) |
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ES1J | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1A; 35ns; SMA; Ufmax: 1.7V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 8pF Case: SMA Max. forward voltage: 1.7V Max. forward impulse current: 30A Leakage current: 0.1mA Power dissipation: 1.47W Kind of package: reel; tape |
на замовлення 6745 шт: термін постачання 21-30 дні (днів) |
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NDS7002A | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.28A; Idm: 1.5A; 0.3W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.28A Pulsed drain current: 1.5A Power dissipation: 0.3W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 1475 шт: термін постачання 21-30 дні (днів) |
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FAN3224CMX | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Technology: MillerDrive™ Case: SO8 Output current: -4.3...2.8A Number of channels: 2 Supply voltage: 4.5...18V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 20ns Pulse fall time: 17ns Kind of package: reel; tape Kind of output: non-inverting |
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FAN3224TMX | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Technology: MillerDrive™ Case: SO8 Output current: -4.3...2.8A Number of channels: 2 Supply voltage: 4.5...18V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 20ns Pulse fall time: 17ns Kind of package: reel; tape Kind of output: non-inverting |
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6HP04MH-TL-W | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -0.37A; Idm: -1.48A; 0.6W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -0.37A Pulsed drain current: -1.48A Power dissipation: 0.6W Case: SC70; SOT323 Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 0.84nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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LM833DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 15MHz; Ch: 2; SO8; ±5÷18VDC,10÷36VDC Type of integrated circuit: operational amplifier Bandwidth: 15MHz Mounting: SMT Number of channels: 2 Case: SO8 Slew rate: 7V/μs Operating temperature: -40...85°C Input offset voltage: 0.3mV Voltage supply range: ± 5...18V DC; 10...36V DC Kind of package: reel; tape Power dissipation: 0.5W |
на замовлення 1917 шт: термін постачання 21-30 дні (днів) |
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2N5550TA | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 140V; 0.6A; 0.625W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 140V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Current gain: 20...250 Mounting: THT Kind of package: Ammo Pack Frequency: 100...300MHz |
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2N5550TFR | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 140V; 0.6A; 0.625W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 140V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Current gain: 20...250 Mounting: THT Kind of package: reel; tape Frequency: 100...300MHz |
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1N914BWS | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 75V; 0.15A; SOD323F; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.15A Semiconductor structure: single diode Case: SOD323F Kind of package: reel; tape |
на замовлення 4760 шт: термін постачання 21-30 дні (днів) |
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1N914BWT | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOD523F; Ufmax: 1V; Ir: 5uA Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 4pF Case: SOD523F Max. forward voltage: 1V Leakage current: 5µA Power dissipation: 0.2W Kind of package: reel; tape |
на замовлення 5650 шт: термін постачання 21-30 дні (днів) |
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| NCP81161MNTBG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; buck; high-side,low-side,gate driver; DFN8 Operating temperature: -10...125°C Mounting: SMD Kind of integrated circuit: gate driver; high-side; low-side Topology: buck Case: DFN8 Supply voltage: 4.5...13.2V DC Type of integrated circuit: driver |
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MC74HCT245ADTG | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,bus transceiver,octal; Ch: 8; CMOS,TTL; SMD Type of integrated circuit: digital Kind of integrated circuit: 3-state; bus transceiver; octal Number of channels: 8 Technology: CMOS; TTL Mounting: SMD Case: TSSOP20 Manufacturer series: HCT Supply voltage: 4.5...5.5V DC Operating temperature: -55...125°C Kind of output: 3-state Kind of package: tube Family: HCT |
на замовлення 7 шт: термін постачання 21-30 дні (днів) |
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MC74HCT245ADTR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; HCT Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Technology: CMOS; TTL Mounting: SMD Case: TSSOP20 Manufacturer series: HCT Supply voltage: 4.5...5.5V DC Operating temperature: -55...125°C Kind of output: 3-state Kind of package: reel; tape Quiescent current: 160µA |
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MC74HCT245ADWG | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; SO20 Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Technology: CMOS; TTL Mounting: SMD Case: SO20 Manufacturer series: HCT Supply voltage: 4.5...5.5V DC Operating temperature: -55...125°C Kind of output: 3-state Kind of package: tube Quiescent current: 160µA |
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| MC74HCT245ADWR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,bus transceiver,octal; Ch: 8; CMOS,TTL; SMD Type of integrated circuit: digital Kind of integrated circuit: 3-state; bus transceiver; octal Number of channels: 8 Technology: CMOS; TTL Mounting: SMD Case: SOIC20 Manufacturer series: HCT Supply voltage: 4.5...5.5V DC Operating temperature: -55...125°C Kind of output: 3-state Kind of package: reel; tape Family: HCT |
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| MM74HCT245MTC | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,octal,transceiver; Ch: 8; CMOS,TTL; SMD; HCT Type of integrated circuit: digital Kind of integrated circuit: 3-state; octal; transceiver Number of channels: 8 Technology: CMOS; TTL Mounting: SMD Case: TSSOP20WB Manufacturer series: HCT Supply voltage: 4.5...5.5V DC Operating temperature: -55...125°C Kind of output: 3-state Kind of package: tube Family: HCT |
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MM74HCT245MTCX | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; HCT Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Technology: CMOS; TTL Mounting: SMD Case: TSSOP20 Manufacturer series: HCT Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of output: 3-state Kind of package: reel; tape Quiescent current: 160µA |
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MM74HCT245WM | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20; HCT Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Mounting: SMD Case: SO20 Manufacturer series: HCT Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of output: 3-state |
на замовлення 1443 шт: термін постачання 21-30 дні (днів) |
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| MM74HCT245WMX | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,octal,transceiver; Ch: 8; CMOS,TTL; SMD; HCT Type of integrated circuit: digital Kind of integrated circuit: 3-state; octal; transceiver Number of channels: 8 Technology: CMOS; TTL Mounting: SMD Case: SO20WB Manufacturer series: HCT Supply voltage: 4.5...5.5V DC Operating temperature: -55...125°C Kind of output: 3-state Kind of package: reel; tape Family: HCT |
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| NRVB440MFST1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 4A; DFN5; reel,tape Mounting: SMD Application: automotive industry Max. off-state voltage: 40V Load current: 4A Max. load current: 8A Kind of package: reel; tape Semiconductor structure: single diode Case: DFN5 Type of diode: Schottky rectifying Max. forward impulse current: 40A Max. forward voltage: 0.65V |
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| NRVB440MFST3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 4A; DFN5; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 4A Max. load current: 8A Semiconductor structure: single diode Max. forward voltage: 0.65V Case: DFN5 Kind of package: reel; tape Max. forward impulse current: 40A Application: automotive industry |
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| NRVB440MFSWFT1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 4A; DFN5; reel,tape Mounting: SMD Application: automotive industry Max. off-state voltage: 40V Load current: 4A Max. load current: 8A Kind of package: reel; tape Semiconductor structure: single diode Case: DFN5 Type of diode: Schottky rectifying Max. forward impulse current: 40A Max. forward voltage: 0.65V |
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| NRVB440MFSWFT3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 4A; DFN5; reel,tape Mounting: SMD Application: automotive industry Max. off-state voltage: 40V Load current: 4A Max. load current: 8A Kind of package: reel; tape Semiconductor structure: single diode Case: DFN5 Type of diode: Schottky rectifying Max. forward impulse current: 40A Max. forward voltage: 0.65V |
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| NRVB460MFST1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 4A; DFN5; reel,tape Mounting: SMD Case: DFN5 Application: automotive industry Kind of package: reel; tape Load current: 4A Semiconductor structure: single diode Max. forward impulse current: 40A Type of diode: Schottky rectifying Max. off-state voltage: 60V Max. load current: 8A Max. forward voltage: 0.74V |
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| NRVB460MFST3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 4A; DFN5; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 4A Max. load current: 8A Semiconductor structure: single diode Max. forward voltage: 0.74V Case: DFN5 Kind of package: reel; tape Max. forward impulse current: 40A Application: automotive industry |
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1N5406G | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 600V; 3A; Ifsm: 200A; DO27; Ufmax: 1V; Ir: 50uA Type of diode: switching Mounting: THT Max. off-state voltage: 0.6kV Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 200A Case: DO27 Max. forward voltage: 1V Leakage current: 50µA |
на замовлення 525 шт: термін постачання 21-30 дні (днів) |
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1N5406RLG | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 600V; 3A; reel,tape; Ifsm: 200A; DO27; Ir: 50uA Type of diode: switching Mounting: THT Max. off-state voltage: 0.6kV Load current: 3A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 200A Case: DO27 Max. forward voltage: 1V Leakage current: 50µA |
на замовлення 2863 шт: термін постачання 21-30 дні (днів) |
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2N6034G | ONSEMI |
Category: PNP THT Darlington transistors Description: Transistor: PNP; bipolar; Darlington; 40V; 4A; 40W; TO225 Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 40V Collector current: 4A Power dissipation: 40W Case: TO225 Mounting: THT Kind of package: bulk |
на замовлення 16 шт: термін постачання 21-30 дні (днів) |
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2N6036G | ONSEMI |
Category: PNP THT Darlington transistors Description: Transistor: PNP; bipolar; Darlington; 80V; 4A; 40W; TO225 Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 80V Collector current: 4A Power dissipation: 40W Case: TO225 Mounting: THT Kind of package: bulk |
товар відсутній |
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2N6042G | ONSEMI |
Category: PNP THT Darlington transistors Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 75W; TO220AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 8A Power dissipation: 75W Case: TO220AB Mounting: THT Kind of package: tube |
товар відсутній |
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2N6043G | ONSEMI |
Category: NPN THT Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 60V; 8A; 75W; TO220AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 60V Collector current: 8A Power dissipation: 75W Case: TO220AB Mounting: THT Kind of package: tube |
на замовлення 59 шт: термін постачання 21-30 дні (днів) |
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2N6045G | ONSEMI |
Category: NPN THT Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 75W; TO220AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 8A Power dissipation: 75W Case: TO220AB Mounting: THT Kind of package: tube |
на замовлення 167 шт: термін постачання 21-30 дні (днів) |
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FSB50450S | ONSEMI |
Category: Motor and PWM drivers Description: IC: driver; MOSFET three-phase bridge; Motion SPM® 5; SPM5D-023 Operating temperature: -20...100°C Mounting: SMD Operating voltage: 13.5...16.5/0...400V Technology: Motion SPM® 5 Kind of integrated circuit: 3-phase motor controller; IPM Topology: MOSFET three-phase bridge Case: SPM5D-023 Frequency: 15kHz Collector-emitter voltage: 500V Output current: 1.5A Type of integrated circuit: driver Number of channels: 6 Power dissipation: 10W |
товар відсутній |
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FDB12N50FTM-WS | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 6.9A Pulsed drain current: 46A Power dissipation: 165W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.7Ω Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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| FDB12N50TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK Type of transistor: N-MOSFET Technology: DMOS; UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 6.9A Pulsed drain current: 46A Power dissipation: 165W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.65Ω Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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NSI45030AT1G | ONSEMI |
Category: LED drivers Description: IC: driver; current regulator,LED driver; SOD123; 45V; 460mW; 30mA Type of integrated circuit: driver Kind of integrated circuit: current regulator; LED driver Case: SOD123 Mounting: SMD Operating temperature: -55...150°C Operating voltage: 45V Power dissipation: 0.46W Operating current: 30mA |
на замовлення 1489 шт: термін постачання 21-30 дні (днів) |
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NSI45030T1G | ONSEMI |
Category: LED drivers Description: IC: driver; current regulator,LED driver; SOD123; 45V; 460mW; 30mA Type of integrated circuit: driver Kind of integrated circuit: current regulator; LED driver Case: SOD123 Mounting: SMD Operating temperature: -55...150°C Operating voltage: 45V Power dissipation: 0.46W Operating current: 30mA |
товар відсутній |
| MC74ACT04DTR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷6VDC; -40÷85°C; 40uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: ACT
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷6VDC; -40÷85°C; 40uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: ACT
товар відсутній
| FCH104N60F |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 357W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 357W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.104Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 357W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 357W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.104Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| FCH104N60F-F085 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 357W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 357W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.104Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Application: automotive industry
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 357W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 357W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.104Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Application: automotive industry
товар відсутній
| FDD6670A |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 60A; 63W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Power dissipation: 63W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 60A; 63W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Power dissipation: 63W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| AFGB40T65SQDN |
|
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; D2PAK; automotive industry
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 119W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: SMD
Gate charge: 76nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Application: automotive industry
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; D2PAK; automotive industry
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 119W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: SMD
Gate charge: 76nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Application: automotive industry
товар відсутній
| NCP1055ST100T3G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 7.5÷10V; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 680mA
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 15Ω
Operating voltage: 7.5...10V
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 7.5÷10V; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 680mA
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 15Ω
Operating voltage: 7.5...10V
товар відсутній
| NCP1055ST136T3G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 7.5÷10V; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 680mA
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 15Ω
Operating voltage: 7.5...10V
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 7.5÷10V; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 680mA
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 15Ω
Operating voltage: 7.5...10V
товар відсутній
| NCP1076STBT3G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 6.3÷10V; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.65A
Frequency: 90...110kHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 6.9Ω
Operating voltage: 6.3...10V
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 6.3÷10V; SOT223; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.65A
Frequency: 90...110kHz
Mounting: SMD
Case: SOT223
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 6.9Ω
Operating voltage: 6.3...10V
товар відсутній
| TIP122G |
|
Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 5A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 5A
Power dissipation: 2W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 5A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 5A
Power dissipation: 2W
Case: TO220AB
Mounting: THT
Kind of package: tube
на замовлення 56 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 46.13 грн |
| 11+ | 35.14 грн |
| 35+ | 24.68 грн |
| MBR40250G |
|
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 250V; 40A; TO220AC; Ufmax: 0.86V
Type of diode: Schottky rectifying
Max. forward impulse current: 150A
Semiconductor structure: single diode
Mounting: THT
Case: TO220AC
Max. off-state voltage: 250V
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. load current: 80A
Max. forward voltage: 0.86V
Load current: 40A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 250V; 40A; TO220AC; Ufmax: 0.86V
Type of diode: Schottky rectifying
Max. forward impulse current: 150A
Semiconductor structure: single diode
Mounting: THT
Case: TO220AC
Max. off-state voltage: 250V
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. load current: 80A
Max. forward voltage: 0.86V
Load current: 40A
товар відсутній
| MBR40250TG |
|
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 250V; 40A; TO220-3; Ufmax: 0.86V
Type of diode: Schottky rectifying
Max. forward impulse current: 150A
Semiconductor structure: single diode
Mounting: THT
Case: TO220-3
Max. off-state voltage: 250V
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. load current: 80A
Max. forward voltage: 0.86V
Load current: 40A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 250V; 40A; TO220-3; Ufmax: 0.86V
Type of diode: Schottky rectifying
Max. forward impulse current: 150A
Semiconductor structure: single diode
Mounting: THT
Case: TO220-3
Max. off-state voltage: 250V
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. load current: 80A
Max. forward voltage: 0.86V
Load current: 40A
товар відсутній
| MJ11015G | |
|
Виробник: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 120V; 30A; 200W; TO3
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 120V
Collector current: 30A
Power dissipation: 200W
Case: TO3
Mounting: THT
Kind of package: in-tray
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 120V; 30A; 200W; TO3
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 120V
Collector current: 30A
Power dissipation: 200W
Case: TO3
Mounting: THT
Kind of package: in-tray
на замовлення 2 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 673.91 грн |
| 2+ | 448.64 грн |
| FDP8N50NZ |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; 130W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.8A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; 130W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.8A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| FDA28N50 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 17A; Idm: 112A; 310W; TO3PN
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 17A
Pulsed drain current: 112A
Power dissipation: 310W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 155mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 17A; Idm: 112A; 310W; TO3PN
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 17A
Pulsed drain current: 112A
Power dissipation: 310W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 155mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| 1N5359BG | |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 24V; bulk; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 24V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Category: THT Zener diodes
Description: Diode: Zener; 5W; 24V; bulk; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 24V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
на замовлення 925 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 24.24 грн |
| 21+ | 17.79 грн |
| 50+ | 14.81 грн |
| 68+ | 12.49 грн |
| 187+ | 11.83 грн |
| 1N5359BRLG | |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 24V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 24V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Category: THT Zener diodes
Description: Diode: Zener; 5W; 24V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 24V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
на замовлення 332 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 32.29 грн |
| 25+ | 17.13 грн |
| 70+ | 12.27 грн |
| 191+ | 11.62 грн |
| FST3257MTCX |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: analog switch; bus switch,demultiplexer,multiplexer; Ch: 4
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of integrated circuit: bus switch; demultiplexer; multiplexer
Supply voltage: 3...5.5V DC
Type of integrated circuit: analog switch
Number of channels: 4
Quiescent current: 3µA
Category: Decoders, multiplexers, switches
Description: IC: analog switch; bus switch,demultiplexer,multiplexer; Ch: 4
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of integrated circuit: bus switch; demultiplexer; multiplexer
Supply voltage: 3...5.5V DC
Type of integrated circuit: analog switch
Number of channels: 4
Quiescent current: 3µA
товар відсутній
| 74FST3257MNTWG |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; demultiplexer,multiplexer; Ch: 4; SMD; QFN16; 4÷5.5VDC
Mounting: SMD
Case: QFN16
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of integrated circuit: demultiplexer; multiplexer
Supply voltage: 4...5.5V DC
Type of integrated circuit: digital
Number of channels: 4
Quiescent current: 3µA
Category: Decoders, multiplexers, switches
Description: IC: digital; demultiplexer,multiplexer; Ch: 4; SMD; QFN16; 4÷5.5VDC
Mounting: SMD
Case: QFN16
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of integrated circuit: demultiplexer; multiplexer
Supply voltage: 4...5.5V DC
Type of integrated circuit: digital
Number of channels: 4
Quiescent current: 3µA
товар відсутній
| FST3253MTCX |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: analog switch; bus switch,demultiplexer,multiplexer; Ch: 2
Type of integrated circuit: analog switch
Kind of integrated circuit: bus switch; demultiplexer; multiplexer
Number of channels: 2
Technology: TTL
Mounting: SMD
Case: TSSOP16
Supply voltage: 4...5.5V DC
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 3µA
Category: Decoders, multiplexers, switches
Description: IC: analog switch; bus switch,demultiplexer,multiplexer; Ch: 2
Type of integrated circuit: analog switch
Kind of integrated circuit: bus switch; demultiplexer; multiplexer
Number of channels: 2
Technology: TTL
Mounting: SMD
Case: TSSOP16
Supply voltage: 4...5.5V DC
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 3µA
товар відсутній
| HGT1S10N120BNST |
|
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 17A; 298W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 17A
Power dissipation: 298W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 17A; 298W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 17A
Power dissipation: 298W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
товар відсутній
| MC33151DG |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Output voltage: 0.8...11.2V
Number of channels: 2
Supply voltage: 6.5...18V DC
Mounting: SMD
Operating temperature: -40...85°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: tube
Kind of output: inverting
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Output voltage: 0.8...11.2V
Number of channels: 2
Supply voltage: 6.5...18V DC
Mounting: SMD
Operating temperature: -40...85°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: tube
Kind of output: inverting
Protection: undervoltage UVP
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 390.9 грн |
| MC33151PG | |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: DIP8
Output current: -1.5...1.5A
Output voltage: 0.8...11.2V
Number of channels: 2
Supply voltage: 6.5...18V DC
Mounting: THT
Operating temperature: -40...85°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: tube
Kind of output: inverting
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: DIP8
Output current: -1.5...1.5A
Output voltage: 0.8...11.2V
Number of channels: 2
Supply voltage: 6.5...18V DC
Mounting: THT
Operating temperature: -40...85°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: tube
Kind of output: inverting
Protection: undervoltage UVP
на замовлення 94 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 80.58 грн |
| 10+ | 71.87 грн |
| 14+ | 61.71 грн |
| 38+ | 58.08 грн |
| MOC3022VM |
|
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; triac; DIP6; Ch: 1; MOC302XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Mounting: THT
Number of channels: 1
Manufacturer series: MOC302XM
Category: Optotriacs
Description: Optotriac; 4.17kV; triac; DIP6; Ch: 1; MOC302XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Mounting: THT
Number of channels: 1
Manufacturer series: MOC302XM
на замовлення 878 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 51.6 грн |
| 12+ | 30.93 грн |
| 25+ | 22.36 грн |
| 46+ | 18.73 грн |
| 100+ | 17.71 грн |
| 500+ | 17.13 грн |
| ES1J |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 35ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 8pF
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Leakage current: 0.1mA
Power dissipation: 1.47W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 35ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 8pF
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Leakage current: 0.1mA
Power dissipation: 1.47W
Kind of package: reel; tape
на замовлення 6745 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 17.98 грн |
| 40+ | 9.15 грн |
| 100+ | 8.2 грн |
| 120+ | 7.19 грн |
| 330+ | 6.82 грн |
| NDS7002A |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.28A; Idm: 1.5A; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.28A
Pulsed drain current: 1.5A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.28A; Idm: 1.5A; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.28A
Pulsed drain current: 1.5A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 1475 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 75+ | 5.94 грн |
| 100+ | 4.95 грн |
| 225+ | 3.79 грн |
| 625+ | 3.59 грн |
| FAN3224CMX |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8
Output current: -4.3...2.8A
Number of channels: 2
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 20ns
Pulse fall time: 17ns
Kind of package: reel; tape
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8
Output current: -4.3...2.8A
Number of channels: 2
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 20ns
Pulse fall time: 17ns
Kind of package: reel; tape
Kind of output: non-inverting
товар відсутній
| FAN3224TMX |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8
Output current: -4.3...2.8A
Number of channels: 2
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 20ns
Pulse fall time: 17ns
Kind of package: reel; tape
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8
Output current: -4.3...2.8A
Number of channels: 2
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 20ns
Pulse fall time: 17ns
Kind of package: reel; tape
Kind of output: non-inverting
товар відсутній
| 6HP04MH-TL-W |
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.37A; Idm: -1.48A; 0.6W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.37A
Pulsed drain current: -1.48A
Power dissipation: 0.6W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 0.84nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.37A; Idm: -1.48A; 0.6W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.37A
Pulsed drain current: -1.48A
Power dissipation: 0.6W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 0.84nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| LM833DR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 15MHz; Ch: 2; SO8; ±5÷18VDC,10÷36VDC
Type of integrated circuit: operational amplifier
Bandwidth: 15MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 7V/μs
Operating temperature: -40...85°C
Input offset voltage: 0.3mV
Voltage supply range: ± 5...18V DC; 10...36V DC
Kind of package: reel; tape
Power dissipation: 0.5W
Category: SMD operational amplifiers
Description: IC: operational amplifier; 15MHz; Ch: 2; SO8; ±5÷18VDC,10÷36VDC
Type of integrated circuit: operational amplifier
Bandwidth: 15MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 7V/μs
Operating temperature: -40...85°C
Input offset voltage: 0.3mV
Voltage supply range: ± 5...18V DC; 10...36V DC
Kind of package: reel; tape
Power dissipation: 0.5W
на замовлення 1917 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 22.12 грн |
| 25+ | 17.64 грн |
| 69+ | 12.41 грн |
| 189+ | 11.76 грн |
| 2N5550TA |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 140V; 0.6A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 20...250
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100...300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 140V; 0.6A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 20...250
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100...300MHz
товар відсутній
| 2N5550TFR |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 140V; 0.6A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 20...250
Mounting: THT
Kind of package: reel; tape
Frequency: 100...300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 140V; 0.6A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 20...250
Mounting: THT
Kind of package: reel; tape
Frequency: 100...300MHz
товар відсутній
| 1N914BWS |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; SOD323F; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Semiconductor structure: single diode
Case: SOD323F
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; SOD323F; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Semiconductor structure: single diode
Case: SOD323F
Kind of package: reel; tape
на замовлення 4760 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 120+ | 3.28 грн |
| 185+ | 1.98 грн |
| 500+ | 1.8 грн |
| 595+ | 1.43 грн |
| 1630+ | 1.35 грн |
| 1N914BWT |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOD523F; Ufmax: 1V; Ir: 5uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 4pF
Case: SOD523F
Max. forward voltage: 1V
Leakage current: 5µA
Power dissipation: 0.2W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOD523F; Ufmax: 1V; Ir: 5uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 4pF
Case: SOD523F
Max. forward voltage: 1V
Leakage current: 5µA
Power dissipation: 0.2W
Kind of package: reel; tape
на замовлення 5650 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 175+ | 2.35 грн |
| 200+ | 1.96 грн |
| 500+ | 1.73 грн |
| 575+ | 1.5 грн |
| 1575+ | 1.42 грн |
| NCP81161MNTBG |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; DFN8
Operating temperature: -10...125°C
Mounting: SMD
Kind of integrated circuit: gate driver; high-side; low-side
Topology: buck
Case: DFN8
Supply voltage: 4.5...13.2V DC
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; DFN8
Operating temperature: -10...125°C
Mounting: SMD
Kind of integrated circuit: gate driver; high-side; low-side
Topology: buck
Case: DFN8
Supply voltage: 4.5...13.2V DC
Type of integrated circuit: driver
товар відсутній
| MC74HCT245ADTG |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus transceiver,octal; Ch: 8; CMOS,TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bus transceiver; octal
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: tube
Family: HCT
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus transceiver,octal; Ch: 8; CMOS,TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bus transceiver; octal
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: tube
Family: HCT
на замовлення 7 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 67.23 грн |
| MC74HCT245ADTR2G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; HCT
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 160µA
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; HCT
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 160µA
товар відсутній
| MC74HCT245ADWG |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; SO20
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SO20
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: tube
Quiescent current: 160µA
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; SO20
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SO20
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: tube
Quiescent current: 160µA
товар відсутній
| MC74HCT245ADWR2G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus transceiver,octal; Ch: 8; CMOS,TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bus transceiver; octal
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC20
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Family: HCT
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus transceiver,octal; Ch: 8; CMOS,TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bus transceiver; octal
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC20
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Family: HCT
товар відсутній
| MM74HCT245MTC |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,octal,transceiver; Ch: 8; CMOS,TTL; SMD; HCT
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; octal; transceiver
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20WB
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: tube
Family: HCT
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,octal,transceiver; Ch: 8; CMOS,TTL; SMD; HCT
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; octal; transceiver
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20WB
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: tube
Family: HCT
товар відсутній
| MM74HCT245MTCX |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; HCT
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 160µA
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; HCT
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 160µA
товар відсутній
| MM74HCT245WM |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20; HCT
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: SO20
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20; HCT
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: SO20
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
на замовлення 1443 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 52.38 грн |
| 10+ | 41.45 грн |
| 24+ | 35.82 грн |
| 66+ | 33.86 грн |
| 114+ | 33.25 грн |
| 532+ | 32.6 грн |
| MM74HCT245WMX |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,octal,transceiver; Ch: 8; CMOS,TTL; SMD; HCT
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; octal; transceiver
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SO20WB
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Family: HCT
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,octal,transceiver; Ch: 8; CMOS,TTL; SMD; HCT
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; octal; transceiver
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SO20WB
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Family: HCT
товар відсутній
| NRVB440MFST1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 4A; DFN5; reel,tape
Mounting: SMD
Application: automotive industry
Max. off-state voltage: 40V
Load current: 4A
Max. load current: 8A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: DFN5
Type of diode: Schottky rectifying
Max. forward impulse current: 40A
Max. forward voltage: 0.65V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 4A; DFN5; reel,tape
Mounting: SMD
Application: automotive industry
Max. off-state voltage: 40V
Load current: 4A
Max. load current: 8A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: DFN5
Type of diode: Schottky rectifying
Max. forward impulse current: 40A
Max. forward voltage: 0.65V
товар відсутній
| NRVB440MFST3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 4A; DFN5; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 4A
Max. load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.65V
Case: DFN5
Kind of package: reel; tape
Max. forward impulse current: 40A
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 4A; DFN5; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 4A
Max. load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.65V
Case: DFN5
Kind of package: reel; tape
Max. forward impulse current: 40A
Application: automotive industry
товар відсутній
| NRVB440MFSWFT1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 4A; DFN5; reel,tape
Mounting: SMD
Application: automotive industry
Max. off-state voltage: 40V
Load current: 4A
Max. load current: 8A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: DFN5
Type of diode: Schottky rectifying
Max. forward impulse current: 40A
Max. forward voltage: 0.65V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 4A; DFN5; reel,tape
Mounting: SMD
Application: automotive industry
Max. off-state voltage: 40V
Load current: 4A
Max. load current: 8A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: DFN5
Type of diode: Schottky rectifying
Max. forward impulse current: 40A
Max. forward voltage: 0.65V
товар відсутній
| NRVB440MFSWFT3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 4A; DFN5; reel,tape
Mounting: SMD
Application: automotive industry
Max. off-state voltage: 40V
Load current: 4A
Max. load current: 8A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: DFN5
Type of diode: Schottky rectifying
Max. forward impulse current: 40A
Max. forward voltage: 0.65V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 4A; DFN5; reel,tape
Mounting: SMD
Application: automotive industry
Max. off-state voltage: 40V
Load current: 4A
Max. load current: 8A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: DFN5
Type of diode: Schottky rectifying
Max. forward impulse current: 40A
Max. forward voltage: 0.65V
товар відсутній
| NRVB460MFST1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 4A; DFN5; reel,tape
Mounting: SMD
Case: DFN5
Application: automotive industry
Kind of package: reel; tape
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 40A
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. load current: 8A
Max. forward voltage: 0.74V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 4A; DFN5; reel,tape
Mounting: SMD
Case: DFN5
Application: automotive industry
Kind of package: reel; tape
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 40A
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. load current: 8A
Max. forward voltage: 0.74V
товар відсутній
| NRVB460MFST3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 4A; DFN5; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 4A
Max. load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.74V
Case: DFN5
Kind of package: reel; tape
Max. forward impulse current: 40A
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 4A; DFN5; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 4A
Max. load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.74V
Case: DFN5
Kind of package: reel; tape
Max. forward impulse current: 40A
Application: automotive industry
товар відсутній
| 1N5406G |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 600V; 3A; Ifsm: 200A; DO27; Ufmax: 1V; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1V
Leakage current: 50µA
Category: THT universal diodes
Description: Diode: switching; THT; 600V; 3A; Ifsm: 200A; DO27; Ufmax: 1V; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1V
Leakage current: 50µA
на замовлення 525 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 26.58 грн |
| 17+ | 21.78 грн |
| 19+ | 19.82 грн |
| 25+ | 15.46 грн |
| 100+ | 12.78 грн |
| 101+ | 8.42 грн |
| 277+ | 7.99 грн |
| 1N5406RLG |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 600V; 3A; reel,tape; Ifsm: 200A; DO27; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1V
Leakage current: 50µA
Category: THT universal diodes
Description: Diode: switching; THT; 600V; 3A; reel,tape; Ifsm: 200A; DO27; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1V
Leakage current: 50µA
на замовлення 2863 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 24.24 грн |
| 20+ | 19.09 грн |
| 23+ | 16.12 грн |
| 26+ | 14.08 грн |
| 100+ | 11.76 грн |
| 109+ | 7.77 грн |
| 300+ | 7.33 грн |
| 1200+ | 7.11 грн |
| 2N6034G |
|
Виробник: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 40V; 4A; 40W; TO225
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 40V
Collector current: 4A
Power dissipation: 40W
Case: TO225
Mounting: THT
Kind of package: bulk
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 40V; 4A; 40W; TO225
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 40V
Collector current: 4A
Power dissipation: 40W
Case: TO225
Mounting: THT
Kind of package: bulk
на замовлення 16 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 36.98 грн |
| 12+ | 30.64 грн |
| 2N6036G |
|
Виробник: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 80V; 4A; 40W; TO225
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 4A
Power dissipation: 40W
Case: TO225
Mounting: THT
Kind of package: bulk
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 80V; 4A; 40W; TO225
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 4A
Power dissipation: 40W
Case: TO225
Mounting: THT
Kind of package: bulk
товар відсутній
| 2N6042G |
|
Виробник: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 75W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 75W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 75W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 75W
Case: TO220AB
Mounting: THT
Kind of package: tube
товар відсутній
| 2N6043G |
|
Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 8A; 75W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 8A
Power dissipation: 75W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 8A; 75W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 8A
Power dissipation: 75W
Case: TO220AB
Mounting: THT
Kind of package: tube
на замовлення 59 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 66.45 грн |
| 10+ | 51.69 грн |
| 23+ | 37.97 грн |
| 2N6045G |
|
Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 75W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 75W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 75W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 75W
Case: TO220AB
Mounting: THT
Kind of package: tube
на замовлення 167 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 64.89 грн |
| 10+ | 51.47 грн |
| 25+ | 35.5 грн |
| 67+ | 33.54 грн |
| FSB50450S |
|
Виробник: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; MOSFET three-phase bridge; Motion SPM® 5; SPM5D-023
Operating temperature: -20...100°C
Mounting: SMD
Operating voltage: 13.5...16.5/0...400V
Technology: Motion SPM® 5
Kind of integrated circuit: 3-phase motor controller; IPM
Topology: MOSFET three-phase bridge
Case: SPM5D-023
Frequency: 15kHz
Collector-emitter voltage: 500V
Output current: 1.5A
Type of integrated circuit: driver
Number of channels: 6
Power dissipation: 10W
Category: Motor and PWM drivers
Description: IC: driver; MOSFET three-phase bridge; Motion SPM® 5; SPM5D-023
Operating temperature: -20...100°C
Mounting: SMD
Operating voltage: 13.5...16.5/0...400V
Technology: Motion SPM® 5
Kind of integrated circuit: 3-phase motor controller; IPM
Topology: MOSFET three-phase bridge
Case: SPM5D-023
Frequency: 15kHz
Collector-emitter voltage: 500V
Output current: 1.5A
Type of integrated circuit: driver
Number of channels: 6
Power dissipation: 10W
товар відсутній
| FDB12N50FTM-WS |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6.9A
Pulsed drain current: 46A
Power dissipation: 165W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.7Ω
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6.9A
Pulsed drain current: 46A
Power dissipation: 165W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.7Ω
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDB12N50TM |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6.9A
Pulsed drain current: 46A
Power dissipation: 165W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6.9A
Pulsed drain current: 46A
Power dissipation: 165W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| NSI45030AT1G |
|
Виробник: ONSEMI
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOD123; 45V; 460mW; 30mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOD123
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 45V
Power dissipation: 0.46W
Operating current: 30mA
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOD123; 45V; 460mW; 30mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOD123
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 45V
Power dissipation: 0.46W
Operating current: 30mA
на замовлення 1489 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 21.66 грн |
| 25+ | 15.83 грн |
| 70+ | 12.2 грн |
| 193+ | 11.54 грн |
| NSI45030T1G |
|
Виробник: ONSEMI
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOD123; 45V; 460mW; 30mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOD123
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 45V
Power dissipation: 0.46W
Operating current: 30mA
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOD123; 45V; 460mW; 30mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOD123
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 45V
Power dissipation: 0.46W
Operating current: 30mA
товар відсутній