Технічний опис IS64WV51216EDBLL-10BLA3 ISSI
Description: IC SRAM 8MBIT PARALLEL 48TFBGA, Packaging: Tray, Package / Case: 48-TFBGA, Mounting Type: Surface Mount, Memory Size: 8Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 125°C (TA), Voltage - Supply: 2.4V ~ 3.6V, Technology: SRAM - Asynchronous, Memory Format: SRAM, Supplier Device Package: 48-TFBGA (6x8), Part Status: Active, Write Cycle Time - Word, Page: 10ns, Memory Interface: Parallel, Access Time: 10 ns, Memory Organization: 512K x 16, DigiKey Programmable: Not Verified.
Інші пропозиції IS64WV51216EDBLL-10BLA3
| Фото | Назва | Виробник | Інформація |
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IS64WV51216EDBLL-10BLA3 | Виробник : ISSI |
 SRAM Chip Async Single 2.5V/3.3V 8M-bit 512K x 16 10ns Automotive AEC-Q100 48-Pin TFBGA |
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| IS64WV51216EDBLL-10BLA3 | Виробник : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube Operating voltage: 2.4...3.6V кількість в упаковці: 480 шт |
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%20Renders/706;48TFBGA-1.2-6x8;;48.jpg "IS64WV51216EDBLL-10BLA3") |
IS64WV51216EDBLL-10BLA3 | Виробник : ISSI, Integrated Silicon Solution Inc |
Description: IC SRAM 8MBIT PARALLEL 48TFBGA Packaging: Tray Package / Case: 48-TFBGA Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.4V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 48-TFBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 512K x 16 DigiKey Programmable: Not Verified |
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IS64WV51216EDBLL-10BLA3 | Виробник : ISSI |
SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4v-3.6v,48 Ball mBGA (6x8 mm), RoHS, Automotive temp |
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| IS64WV51216EDBLL-10BLA3 | Виробник : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube Operating voltage: 2.4...3.6V |
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