![ISC130N20NM6ATMA1 ISC130N20NM6ATMA1](https://www.mouser.com/images/infineon/lrg/PG-TSON-8_SPL.jpg)
на замовлення 3261 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 446.08 грн |
10+ | 369.39 грн |
100+ | 259.35 грн |
500+ | 230.54 грн |
1000+ | 193.99 грн |
2500+ | 186.26 грн |
5000+ | 182.04 грн |
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Технічний опис ISC130N20NM6ATMA1 Infineon Technologies
Description: MOSFET, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 88A (Tc), Rds On (Max) @ Id, Vgs: 11.7mOhm @ 50A, 15V, Power Dissipation (Max): 3W (Ta), 242W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 135µA, Supplier Device Package: PG-TSON-8-3, Drive Voltage (Max Rds On, Min Rds On): 10V, 15V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 100 V.
Інші пропозиції ISC130N20NM6ATMA1
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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ISC130N20NM6ATMA1 | Виробник : Infineon Technologies |
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товар відсутній |
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ISC130N20NM6ATMA1 | Виробник : Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 88A (Tc) Rds On (Max) @ Id, Vgs: 11.7mOhm @ 50A, 15V Power Dissipation (Max): 3W (Ta), 242W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 135µA Supplier Device Package: PG-TSON-8-3 Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 100 V |
товар відсутній |
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ISC130N20NM6ATMA1 | Виробник : Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 88A (Tc) Rds On (Max) @ Id, Vgs: 11.7mOhm @ 50A, 15V Power Dissipation (Max): 3W (Ta), 242W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 135µA Supplier Device Package: PG-TSON-8-3 Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 100 V |
товар відсутній |