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AUIRFR4105 International Rectifier
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Description: AUTOMOTIVE HEXFET N CHANNEL
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 16A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
на замовлення 5362 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
455+ | 47 грн |
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Технічний опис AUIRFR4105 International Rectifier
Description: MOSFET N-CH 55V 20A DPAK, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 45mOhm @ 16A, 10V, Power Dissipation (Max): 68W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA (DPAK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V.
Інші пропозиції AUIRFR4105
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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AUIRFR4105 | Виробник : Infineon Technologies |
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товар відсутній |
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AUIRFR4105 | Виробник : Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 16A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V |
товар відсутній |
|
![]() |
AUIRFR4105 | Виробник : Infineon Technologies |
![]() |
товар відсутній |
|
![]() |
AUIRFR4105 | Виробник : Infineon (IRF) |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 27A; 68W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 27A Power dissipation: 68W Case: DPAK Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Gate charge: 22.7nC Kind of channel: enhanced |
товар відсутній |