Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (137769) > Сторінка 475 з 2297
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DF23MR12W1M1B11BOMA1244 | Infineon Technologies |
 Description: MOSFETPackaging: Bulk |
на замовлення 24 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
 |
EVAL6EDL7141TRAP1SHTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR 6EDL7141 Packaging: Bulk Function: Motor Controller/Driver, Gate Driver Type: Power Management Utilized IC / Part: 6EDL7141 Supplied Contents: Board(s) Primary Attributes: Motors (BLDC) Embedded: Yes, MCU, 32-Bit |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
EVALIMD700AFOC3SHTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR IMD701A Packaging: Bulk Function: Motor Controller/Driver Type: Power Management Utilized IC / Part: 6EDL7141, IMD701A, XMC1404 Supplied Contents: Board(s) Primary Attributes: 18V ~ 24V Embedded: Yes, MCU, 32-Bit Part Status: Active |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
| BGH 182M E6327 | Infineon Technologies |
Description: FILTER LC ESD SMD |
товар відсутній |
||||||||||||||||
 |
TC1796256F150EXBEKDUMA1 | Infineon Technologies |
Description: RISC FLASH MICROCONTROLLER, 32-B Packaging: Bulk Part Status: Active DigiKey Programmable: Not Verified |
товар відсутній |
|||||||||||||||
| ACCESSORY26649NOSA1 | Infineon Technologies | Description: ACCESSORY 26649 |
товар відсутній |
||||||||||||||||
 |
CY7C1645KV18-400BZXI | Infineon Technologies |
Description: IC SRAM 144MBIT PAR 165FBGA Packaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 144Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, QDR II+ Clock Frequency: 400 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (15x17) Part Status: Active Memory Interface: Parallel Memory Organization: 4M x 36 DigiKey Programmable: Not Verified |
товар відсутній |
|||||||||||||||
 |
IPI60R250CP | Infineon Technologies |
Description: COOLMOS N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 520µA Supplier Device Package: PG-TO262 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V |
на замовлення 474 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
ILD4180 | Infineon Technologies |
Description: SWITCHING REGULATOR Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Voltage - Output: 0.6V ~ 16V Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 370kHz Type: DC DC Regulator Operating Temperature: -40°C ~ 125°C (TJ) Applications: Commercial & Industrial Lighting Current - Output / Channel: 1.8A Internal Switch(s): Yes Topology: Step-Down (Buck) Supplier Device Package: PG-DSO-8-27 Dimming: PWM Voltage - Supply (Min): 4.75V Voltage - Supply (Max): 45V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
LD403524VBOARDTOBO1 | Infineon Technologies |
Description: BOARD EVAL ILD4035 24V |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
TT820N16KOFHPSA1 | Infineon Technologies |
Description: THYR / DIODE MODULE DK Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: 135°C (TJ) Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 24800A @ 50Hz Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 820 A Voltage - Gate Trigger (Vgt) (Max): 2 V Part Status: Active Current - On State (It (RMS)) (Max): 1050 A Voltage - Off State: 1.6 kV |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
| SAK-TC277TP-64F200S BC | Infineon Technologies | Description: IC MICROCONTROLLER |
товар відсутній |
||||||||||||||||
 |
PEB2096HV2.1OCTAT-P | Infineon Technologies |
Description: IC TRANSCEIVER OCTAL Packaging: Bulk |
товар відсутній |
|||||||||||||||
 |
PEB2096HV2.1 | Infineon Technologies | Description: OCTAT-P OCTAL TRANSCEICER |
товар відсутній |
|||||||||||||||
| IPB042N10NF2SATMA1 | Infineon Technologies |
Description: TRENCH >=100V Packaging: Tape & Reel (TR) Part Status: Discontinued at Digi-Key |
товар відсутній |
||||||||||||||||
 |
TLE7729TXUMA1 | Infineon Technologies |
Description: IC INTERFACE SPECIALIZED 28TSSOP Packaging: Bulk Package / Case: 28-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Interface: SPI Serial Voltage - Supply: 3.3V, 5V Supplier Device Package: PG-TSSOP-28 Grade: Automotive Part Status: Obsolete |
на замовлення 19745 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
TDA5340XUMA1 | Infineon Technologies |
Description: IC RF TXRX ISM<1GHZ 28TSSOP Packaging: Tape & Reel (TR) Package / Case: 28-TSSOP (0.173", 4.40mm Width) Sensitivity: -116dBm Mounting Type: Surface Mount Frequency: 300MHz ~ 320MHz, 415MHz ~ 495MHz, 863MHz ~ 960MHz Type: TxRx Only Operating Temperature: -40°C ~ 110°C Voltage - Supply: 3V ~ 3.6V Power - Output: 14dBm Current - Receiving: 12mA Current - Transmitting: 12mA Supplier Device Package: PG-TSSOP-28 Modulation: ASK, FSK, GFSK RF Family/Standard: General ISM < 1GHz Serial Interfaces: SPI Part Status: Obsolete |
товар відсутній |
|||||||||||||||
 |
XMC1302T028X0128ABXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASH 28TSSOP Packaging: Tape & Reel (TR) Package / Case: 28-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Speed: 32MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 14x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, IrDA, SPI, UART/USART Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT Supplier Device Package: PG-TSSOP-28-16 Number of I/O: 26 DigiKey Programmable: Not Verified |
товар відсутній |
|||||||||||||||
| FS50R17KE3B17BPSA1 | Infineon Technologies |
Description: LOW POWER ECONO AG-ECONO2B-311 Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A NTC Thermistor: No Supplier Device Package: AG-ECONO2B IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 82 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 345 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 4.5 nF @ 25 V |
товар відсутній |
||||||||||||||||
| PEF55016EV1.3-G | Infineon Technologies |
Description: GEMINAX-D16 PRO E V2.1 16 CHANNE Packaging: Bulk |
на замовлення 3960 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
 |
DF23MR12W1M1B11BOMA1 | Infineon Technologies |
Description: SIC 2N-CH 1200V AG-EASY1BM-2 Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 25A Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 800V Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V Gate Charge (Qg) (Max) @ Vgs: 620nC @ 15V Vgs(th) (Max) @ Id: 5.5V @ 10mA Supplier Device Package: AG-EASY1BM-2 |
товар відсутній |
|||||||||||||||
| FF900R12IE4VPBOSA1 | Infineon Technologies |
Description: PP, IHM I, XHP 1,7KV Packaging: Bulk Part Status: Active |
на замовлення 117 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
 |
FF900R12ME7WB11BPSA1 | Infineon Technologies |
Description: MEDIUM POWER ECONO Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 900A NTC Thermistor: Yes Supplier Device Package: AG-ECONOD IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 890 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 100 µA Input Capacitance (Cies) @ Vce: 122 nF @ 25 V |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
| IR3565BMFS08TRP | Infineon Technologies | Description: IC DC/DC MULTIPHASE CTLR |
на замовлення 62358 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
 |
CY7C1049G30-10VXI | Infineon Technologies |
Description: IC SRAM 4MBIT PARALLEL 36SOJ Packaging: Tube Package / Case: 36-BSOJ (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 36-SOJ Part Status: Active Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 512K x 8 DigiKey Programmable: Not Verified |
на замовлення 519 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
IDDD10G65C6XTMA1 | Infineon Technologies |
Description: DIODE SIL CARB 650V 29A HDSOP-10 Packaging: Tape & Reel (TR) Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 495pF @ 1V, 1MHz Current - Average Rectified (Io): 29A Supplier Device Package: PG-HDSOP-10-1 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Current - Reverse Leakage @ Vr: 33 µA @ 420 V |
товар відсутній |
|||||||||||||||
|
|
IDDD10G65C6XTMA1 | Infineon Technologies |
Description: DIODE SIL CARB 650V 29A HDSOP-10 Packaging: Cut Tape (CT) Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 495pF @ 1V, 1MHz Current - Average Rectified (Io): 29A Supplier Device Package: PG-HDSOP-10-1 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Current - Reverse Leakage @ Vr: 33 µA @ 420 V |
на замовлення 1538 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
IDDD16G65C6XTMA1 | Infineon Technologies |
Description: DIODE SIL CARB 650V 43A HDSOP-10 Packaging: Tape & Reel (TR) Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 783pF @ 1V, 1MHz Current - Average Rectified (Io): 43A Supplier Device Package: PG-HDSOP-10-1 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Current - Reverse Leakage @ Vr: 53 µA @ 420 V |
на замовлення 3400 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
IDDD16G65C6XTMA1 | Infineon Technologies |
Description: DIODE SIL CARB 650V 43A HDSOP-10 Packaging: Cut Tape (CT) Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 783pF @ 1V, 1MHz Current - Average Rectified (Io): 43A Supplier Device Package: PG-HDSOP-10-1 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Current - Reverse Leakage @ Vr: 53 µA @ 420 V |
на замовлення 4735 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
PTF180101M V1 | Infineon Technologies |
Description: IC FET RF LDMOS 10W TSSOP-10 Packaging: Tape & Reel (TR) Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Current Rating (Amps): 1µA Mounting Type: Surface Mount Frequency: 1.99GHz Power - Output: 10W Gain: 16.5dB Technology: LDMOS Supplier Device Package: PG-RFP-10 Part Status: Discontinued at Digi-Key Voltage - Rated: 65 V Voltage - Test: 28 V Current - Test: 180 mA |
товар відсутній |
|||||||||||||||
|
|
PTF210101M V1 | Infineon Technologies |
Description: IC FET RF LDMOS 10W TSSOP-10 Packaging: Tape & Reel (TR) Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Current Rating (Amps): 1µA Mounting Type: Surface Mount Frequency: 2.17GHz Power - Output: 10W Gain: 15dB Technology: LDMOS Supplier Device Package: PG-RFP-10 Part Status: Obsolete Voltage - Rated: 65 V Voltage - Test: 28 V Current - Test: 180 mA |
товар відсутній |
|||||||||||||||
| BSB280N15NZ3G | Infineon Technologies |
Description: BSB280N15 - 12V-300V N-CHANNEL P Packaging: Bulk Package / Case: DirectFET™ Isometric MX Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 30A, 10V Power Dissipation (Max): 2.8W (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 4V @ 60µA Supplier Device Package: MG-WDSON-2-5 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 75 V |
товар відсутній |
||||||||||||||||
| PXB4330EV2.1 | Infineon Technologies | Description: AOP ATM OAM PROCESSOR |
на замовлення 246 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
| PXB4330EV1.1 | Infineon Technologies | Description: AOP ATM OAM PROCESSOR |
товар відсутній |
||||||||||||||||
| BTS56033LBBXUMA1 | Infineon Technologies |
Description: BTS56033-LBB - SPOC+ SPI POWER C |
товар відсутній |
||||||||||||||||
 |
TD215N22KOFTIMHPSA1 | Infineon Technologies |
Description: THYR / DIODE MODULE DK BG-PB50AT Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: 125°C (TJ) Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 200 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 7000A @ 50Hz Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 215 A Voltage - Gate Trigger (Vgt) (Max): 2 V Part Status: Active Current - On State (It (RMS)) (Max): 410 A Voltage - Off State: 2.2 kV |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
DD390N22STIMHPSA1 | Infineon Technologies |
Description: DIODE MOD GP 2200V BGPB50SB Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 390A Supplier Device Package: BG-PB50SB-1 Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 2200 V Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 800 A Current - Reverse Leakage @ Vr: 1 mA @ 2200 V |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
| BSM200GB120DLCE3256HOSA1 | Infineon Technologies |
Description: BSM200GB120DLC - IGBT Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 200A NTC Thermistor: No Supplier Device Package: Module Current - Collector (Ic) (Max): 420 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1550 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 13 nF @ 25 V |
товар відсутній |
||||||||||||||||
 |
BA892-02V | Infineon Technologies |
Description: SILICON RF SWITCHING DIODE Packaging: Bulk Package / Case: SC-79, SOD-523 Diode Type: Standard - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz Resistance @ If, F: 500mOhm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 35V Supplier Device Package: PG-SC79-2-1 Part Status: Active Current - Max: 100 mA |
товар відсутній |
|||||||||||||||
 |
IRL40S212ARMA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 195A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V Power Dissipation (Max): 231W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 150µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 25 V |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
SLE 66R35 MCC2 | Infineon Technologies |
Description: IC RFID TRANSP 13.56MHZ MCC2-2-1 |
товар відсутній |
|||||||||||||||
 |
SP4001511XTMA1 | Infineon Technologies |
Description: SENSOR 203.05PSIA DSOSP14 Packaging: Tape & Reel (TR) Package / Case: 14-BSSOP (0.220", 5.60mm Width) Output Type: RF Mounting Type: Surface Mount Operating Pressure: 14.5PSI ~ 203.05PSI (100kPa ~ 1400kPa) Pressure Type: Absolute Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3.6V Applications: Board Mount Supplier Device Package: PG-DSOSP-14-82 Port Style: No Port Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
товар відсутній |
|||||||||||||||
|
|
SP4001511XTMA1 | Infineon Technologies |
Description: SENSOR 203.05PSIA DSOSP14 Packaging: Cut Tape (CT) Package / Case: 14-BSSOP (0.220", 5.60mm Width) Output Type: RF Mounting Type: Surface Mount Operating Pressure: 14.5PSI ~ 203.05PSI (100kPa ~ 1400kPa) Pressure Type: Absolute Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3.6V Applications: Board Mount Supplier Device Package: PG-DSOSP-14-82 Port Style: No Port Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
на замовлення 1143 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
SAF-XE164FN-24F80L AA | Infineon Technologies |
Description: IC MCU 16BIT 192KB FLASH 100LQFP |
товар відсутній |
|||||||||||||||
 |
IPB120N06S403ATMA2 | Infineon Technologies |
Description: MOSFET N-CH 60V 120A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 4V @ 120µA Supplier Device Package: PG-TO263-3-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13150 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
|||||||||||||||
| FF23MR12W1M1C11BPSA1 | Infineon Technologies |
Description: LOW POWER EASY AG-EASY1BM-2 Packaging: Tray Part Status: Obsolete |
товар відсутній |
||||||||||||||||
 |
BGA824N6E6329XTSA1 | Infineon Technologies |
Description: IC AMP GALI 1.164-1.615GHZ TSNP6 Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Mounting Type: Surface Mount Frequency: 1.164GHz ~ 1.615GHz RF Type: Galileo, GLONASS, GPS Voltage - Supply: 1.5V ~ 3.6V Gain: 19.5dB Current - Supply: 3.9mA Noise Figure: 0.7dB P1dB: -9dBm Test Frequency: 1.164GHz ~ 1.3GHz Supplier Device Package: PG-TSNP-6-2 Part Status: Active |
на замовлення 48000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
EVALISO1H815GTOBO1 | Infineon Technologies |
Description: EVAL ISO1H815G Packaging: Bulk Function: Power Distribution Switch (Load Switch) Type: Power Management Utilized IC / Part: ISO1H815G Supplied Contents: Board(s) Primary Attributes: 8-Channel (Octal) Embedded: No Part Status: Active |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
T3801N36TOFVTXPSA1 | Infineon Technologies |
Description: SCR MODULE 3600V 6020A DO200AE Packaging: Tray Package / Case: TO-200AF Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C Structure: Single Current - Hold (Ih) (Max): 350 mA Current - Gate Trigger (Igt) (Max): 350 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 91000A @ 50Hz Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 5370 A Voltage - Gate Trigger (Vgt) (Max): 2.5 V Current - On State (It (RMS)) (Max): 6020 A Voltage - Off State: 3.6 kV |
товар відсутній |
|||||||||||||||
 |
IFX54211MBV33HTSA1 | Infineon Technologies |
Description: IC REG LINEAR 3.3V 150MA SCT595 Packaging: Bulk Package / Case: 6-SMD (5 Leads), Gull Wing Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 100 µA Voltage - Input (Max): 18V Number of Regulators: 1 Supplier Device Package: PG-SCT595-5-1 Voltage - Output (Min/Fixed): 3.3V Control Features: Enable Part Status: Obsolete PSRR: 63dB (10kHz) Voltage Dropout (Max): 0.57V @ 150mA Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 200 µA |
на замовлення 170749 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
ISP98DP10LMXTSA1 | Infineon Technologies |
Description: SMALL SIGNAL MOSFETS PG-SOT223-4 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 930mA (Ta), 1.55A (Tc) Rds On (Max) @ Id, Vgs: 980mOhm @ 900mA, 10V Power Dissipation (Max): 1.8W (Ta), 5W (Tc) Vgs(th) (Max) @ Id: 2V @ 165µA Supplier Device Package: PG-SOT223-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 50 V |
товар відсутній |
|||||||||||||||
|
|
ISP98DP10LMXTSA1 | Infineon Technologies |
Description: SMALL SIGNAL MOSFETS PG-SOT223-4 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 930mA (Ta), 1.55A (Tc) Rds On (Max) @ Id, Vgs: 980mOhm @ 900mA, 10V Power Dissipation (Max): 1.8W (Ta), 5W (Tc) Vgs(th) (Max) @ Id: 2V @ 165µA Supplier Device Package: PG-SOT223-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 50 V |
товар відсутній |
|||||||||||||||
 |
IPN65R1K5CE | Infineon Technologies |
Description: SMALL SIGNAL FIELD-EFFECT TRANSI Packaging: Bulk Package / Case: TO-261-3 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 100µA Supplier Device Package: PG-SOT223 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V |
товар відсутній |
|||||||||||||||
 |
IPN65R1K5CEATMA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 5.2A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 100µA Supplier Device Package: PG-SOT223 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V |
товар відсутній |
|||||||||||||||
| MA15037577NDSA1 | Infineon Technologies | Description: POWER MODULE IGBT |
товар відсутній |
||||||||||||||||
 |
IPW65R310CFD | Infineon Technologies |
Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc) Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V Power Dissipation (Max): 104.2W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 440µA Supplier Device Package: PG-TO247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V |
на замовлення 10341 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
IPW65R155CFD7XKSA1 | Infineon Technologies |
Description: HIGH POWER_NEW Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 155mOhm @ 6.4A, 10V Power Dissipation (Max): 77W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 320µA Supplier Device Package: PG-TO247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 400 V |
на замовлення 240 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
IPW65R125CFD7XKSA1 | Infineon Technologies |
Description: HIGH POWER_NEW Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 8.5A, 10V Power Dissipation (Max): 98W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 420µA Supplier Device Package: PG-TO247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V |
на замовлення 235 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
IPW65R090CFD7XKSA1 | Infineon Technologies |
Description: HIGH POWER_NEW Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 12.5A, 10V Power Dissipation (Max): 127W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 630µA Supplier Device Package: PG-TO247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V |
на замовлення 179 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
IPW65R018CFD7XKSA1 | Infineon Technologies |
Description: 650 V COOLMOS CFD7 SUPERJUNCTION Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 106A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 58.2A, 10V Power Dissipation (Max): 446W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 2.91mA Supplier Device Package: PG-TO247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11659 pF @ 400 V |
товар відсутній |
| DF23MR12W1M1B11BOMA1244 |
|
на замовлення 24 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 6330.66 грн |
| EVAL6EDL7141TRAP1SHTOBO1 |
|
Виробник: Infineon Technologies
Description: EVAL BOARD FOR 6EDL7141
Packaging: Bulk
Function: Motor Controller/Driver, Gate Driver
Type: Power Management
Utilized IC / Part: 6EDL7141
Supplied Contents: Board(s)
Primary Attributes: Motors (BLDC)
Embedded: Yes, MCU, 32-Bit
Description: EVAL BOARD FOR 6EDL7141
Packaging: Bulk
Function: Motor Controller/Driver, Gate Driver
Type: Power Management
Utilized IC / Part: 6EDL7141
Supplied Contents: Board(s)
Primary Attributes: Motors (BLDC)
Embedded: Yes, MCU, 32-Bit
на замовлення 6 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 17456.54 грн |
| EVALIMD700AFOC3SHTOBO1 |
|
Виробник: Infineon Technologies
Description: EVAL BOARD FOR IMD701A
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: 6EDL7141, IMD701A, XMC1404
Supplied Contents: Board(s)
Primary Attributes: 18V ~ 24V
Embedded: Yes, MCU, 32-Bit
Part Status: Active
Description: EVAL BOARD FOR IMD701A
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: 6EDL7141, IMD701A, XMC1404
Supplied Contents: Board(s)
Primary Attributes: 18V ~ 24V
Embedded: Yes, MCU, 32-Bit
Part Status: Active
на замовлення 6 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 15434.89 грн |
| TC1796256F150EXBEKDUMA1 |
|
Виробник: Infineon Technologies
Description: RISC FLASH MICROCONTROLLER, 32-B
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
Description: RISC FLASH MICROCONTROLLER, 32-B
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
товар відсутній
| CY7C1645KV18-400BZXI |
|
Виробник: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 4M x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 4M x 36
DigiKey Programmable: Not Verified
товар відсутній
| IPI60R250CP |
|
Виробник: Infineon Technologies
Description: COOLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 520µA
Supplier Device Package: PG-TO262
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V
Description: COOLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 520µA
Supplier Device Package: PG-TO262
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V
на замовлення 474 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 176+ | 118.83 грн |
| ILD4180 |
|
Виробник: Infineon Technologies
Description: SWITCHING REGULATOR
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 0.6V ~ 16V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 370kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Commercial & Industrial Lighting
Current - Output / Channel: 1.8A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: PG-DSO-8-27
Dimming: PWM
Voltage - Supply (Min): 4.75V
Voltage - Supply (Max): 45V
Description: SWITCHING REGULATOR
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 0.6V ~ 16V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 370kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Commercial & Industrial Lighting
Current - Output / Channel: 1.8A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: PG-DSO-8-27
Dimming: PWM
Voltage - Supply (Min): 4.75V
Voltage - Supply (Max): 45V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 416+ | 51.81 грн |
| LD403524VBOARDTOBO1 |
|
Виробник: Infineon Technologies
Description: BOARD EVAL ILD4035 24V
Description: BOARD EVAL ILD4035 24V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1376.91 грн |
| TT820N16KOFHPSA1 |
|
Виробник: Infineon Technologies
Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 24800A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 820 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Off State: 1.6 kV
Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 24800A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 820 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Off State: 1.6 kV
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 25333.27 грн |
| SAK-TC277TP-64F200S BC |
Виробник: Infineon Technologies
Description: IC MICROCONTROLLER
Description: IC MICROCONTROLLER
товар відсутній
| IPB042N10NF2SATMA1 |
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
товар відсутній
| TLE7729TXUMA1 |
|
Виробник: Infineon Technologies
Description: IC INTERFACE SPECIALIZED 28TSSOP
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Interface: SPI Serial
Voltage - Supply: 3.3V, 5V
Supplier Device Package: PG-TSSOP-28
Grade: Automotive
Part Status: Obsolete
Description: IC INTERFACE SPECIALIZED 28TSSOP
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Interface: SPI Serial
Voltage - Supply: 3.3V, 5V
Supplier Device Package: PG-TSSOP-28
Grade: Automotive
Part Status: Obsolete
на замовлення 19745 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 115+ | 183.27 грн |
| TDA5340XUMA1 |
|
Виробник: Infineon Technologies
Description: IC RF TXRX ISM<1GHZ 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Sensitivity: -116dBm
Mounting Type: Surface Mount
Frequency: 300MHz ~ 320MHz, 415MHz ~ 495MHz, 863MHz ~ 960MHz
Type: TxRx Only
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 3V ~ 3.6V
Power - Output: 14dBm
Current - Receiving: 12mA
Current - Transmitting: 12mA
Supplier Device Package: PG-TSSOP-28
Modulation: ASK, FSK, GFSK
RF Family/Standard: General ISM < 1GHz
Serial Interfaces: SPI
Part Status: Obsolete
Description: IC RF TXRX ISM<1GHZ 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Sensitivity: -116dBm
Mounting Type: Surface Mount
Frequency: 300MHz ~ 320MHz, 415MHz ~ 495MHz, 863MHz ~ 960MHz
Type: TxRx Only
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 3V ~ 3.6V
Power - Output: 14dBm
Current - Receiving: 12mA
Current - Transmitting: 12mA
Supplier Device Package: PG-TSSOP-28
Modulation: ASK, FSK, GFSK
RF Family/Standard: General ISM < 1GHz
Serial Interfaces: SPI
Part Status: Obsolete
товар відсутній
| XMC1302T028X0128ABXUMA1 |
|
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-16
Number of I/O: 26
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 128KB FLASH 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-16
Number of I/O: 26
DigiKey Programmable: Not Verified
товар відсутній
| FS50R17KE3B17BPSA1 |
|
Виробник: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2B-311
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 82 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 345 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.5 nF @ 25 V
Description: LOW POWER ECONO AG-ECONO2B-311
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 82 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 345 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.5 nF @ 25 V
товар відсутній
| PEF55016EV1.3-G |
на замовлення 3960 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 1541.89 грн |
| DF23MR12W1M1B11BOMA1 |
|
Виробник: Infineon Technologies
Description: SIC 2N-CH 1200V AG-EASY1BM-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 25A
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 800V
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V
Gate Charge (Qg) (Max) @ Vgs: 620nC @ 15V
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Supplier Device Package: AG-EASY1BM-2
Description: SIC 2N-CH 1200V AG-EASY1BM-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 25A
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 800V
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V
Gate Charge (Qg) (Max) @ Vgs: 620nC @ 15V
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Supplier Device Package: AG-EASY1BM-2
товар відсутній
| FF900R12IE4VPBOSA1 |
|
на замовлення 117 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 40651.84 грн |
| FF900R12ME7WB11BPSA1 |
|
Виробник: Infineon Technologies
Description: MEDIUM POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 890 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 122 nF @ 25 V
Description: MEDIUM POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 890 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 122 nF @ 25 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 23817.99 грн |
| IR3565BMFS08TRP |
Виробник: Infineon Technologies
Description: IC DC/DC MULTIPHASE CTLR
Description: IC DC/DC MULTIPHASE CTLR
на замовлення 62358 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 88+ | 254.18 грн |
| CY7C1049G30-10VXI |
|
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 36SOJ
Packaging: Tube
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-SOJ
Part Status: Active
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 36SOJ
Packaging: Tube
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-SOJ
Part Status: Active
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
на замовлення 519 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 511.68 грн |
| 19+ | 453.43 грн |
| 38+ | 443.97 грн |
| 57+ | 415.22 грн |
| 114+ | 372.56 грн |
| 266+ | 361.3 грн |
| 513+ | 337.94 грн |
| IDDD10G65C6XTMA1 |
|
Виробник: Infineon Technologies
Description: DIODE SIL CARB 650V 29A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 495pF @ 1V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 33 µA @ 420 V
Description: DIODE SIL CARB 650V 29A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 495pF @ 1V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 33 µA @ 420 V
товар відсутній
| IDDD10G65C6XTMA1 |
|
Виробник: Infineon Technologies
Description: DIODE SIL CARB 650V 29A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 495pF @ 1V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 33 µA @ 420 V
Description: DIODE SIL CARB 650V 29A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 495pF @ 1V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 33 µA @ 420 V
на замовлення 1538 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 272.19 грн |
| 10+ | 220.23 грн |
| 100+ | 178.2 грн |
| 500+ | 148.65 грн |
| IDDD16G65C6XTMA1 |
|
Виробник: Infineon Technologies
Description: DIODE SIL CARB 650V 43A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 783pF @ 1V, 1MHz
Current - Average Rectified (Io): 43A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 53 µA @ 420 V
Description: DIODE SIL CARB 650V 43A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 783pF @ 1V, 1MHz
Current - Average Rectified (Io): 43A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 53 µA @ 420 V
на замовлення 3400 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1700+ | 221.9 грн |
| IDDD16G65C6XTMA1 |
|
Виробник: Infineon Technologies
Description: DIODE SIL CARB 650V 43A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 783pF @ 1V, 1MHz
Current - Average Rectified (Io): 43A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 53 µA @ 420 V
Description: DIODE SIL CARB 650V 43A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 783pF @ 1V, 1MHz
Current - Average Rectified (Io): 43A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 53 µA @ 420 V
на замовлення 4735 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 429.57 грн |
| 10+ | 347.04 грн |
| 100+ | 280.75 грн |
| 500+ | 234.2 грн |
| PTF180101M V1 |
|
Виробник: Infineon Technologies
Description: IC FET RF LDMOS 10W TSSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Current Rating (Amps): 1µA
Mounting Type: Surface Mount
Frequency: 1.99GHz
Power - Output: 10W
Gain: 16.5dB
Technology: LDMOS
Supplier Device Package: PG-RFP-10
Part Status: Discontinued at Digi-Key
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 180 mA
Description: IC FET RF LDMOS 10W TSSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Current Rating (Amps): 1µA
Mounting Type: Surface Mount
Frequency: 1.99GHz
Power - Output: 10W
Gain: 16.5dB
Technology: LDMOS
Supplier Device Package: PG-RFP-10
Part Status: Discontinued at Digi-Key
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 180 mA
товар відсутній
| PTF210101M V1 |
|
Виробник: Infineon Technologies
Description: IC FET RF LDMOS 10W TSSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Current Rating (Amps): 1µA
Mounting Type: Surface Mount
Frequency: 2.17GHz
Power - Output: 10W
Gain: 15dB
Technology: LDMOS
Supplier Device Package: PG-RFP-10
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 180 mA
Description: IC FET RF LDMOS 10W TSSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Current Rating (Amps): 1µA
Mounting Type: Surface Mount
Frequency: 2.17GHz
Power - Output: 10W
Gain: 15dB
Technology: LDMOS
Supplier Device Package: PG-RFP-10
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 180 mA
товар відсутній
| BSB280N15NZ3G |
|
Виробник: Infineon Technologies
Description: BSB280N15 - 12V-300V N-CHANNEL P
Packaging: Bulk
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 60µA
Supplier Device Package: MG-WDSON-2-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 75 V
Description: BSB280N15 - 12V-300V N-CHANNEL P
Packaging: Bulk
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 60µA
Supplier Device Package: MG-WDSON-2-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 75 V
товар відсутній
| PXB4330EV2.1 |
Виробник: Infineon Technologies
Description: AOP ATM OAM PROCESSOR
Description: AOP ATM OAM PROCESSOR
на замовлення 246 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 14503.9 грн |
| BTS56033LBBXUMA1 |
|
Виробник: Infineon Technologies
Description: BTS56033-LBB - SPOC+ SPI POWER C
Description: BTS56033-LBB - SPOC+ SPI POWER C
товар відсутній
| TD215N22KOFTIMHPSA1 |
|
Виробник: Infineon Technologies
Description: THYR / DIODE MODULE DK BG-PB50AT
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7000A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 215 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 410 A
Voltage - Off State: 2.2 kV
Description: THYR / DIODE MODULE DK BG-PB50AT
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7000A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 215 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 410 A
Voltage - Off State: 2.2 kV
на замовлення 6 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 14124.89 грн |
| DD390N22STIMHPSA1 |
|
Виробник: Infineon Technologies
Description: DIODE MOD GP 2200V BGPB50SB
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 390A
Supplier Device Package: BG-PB50SB-1
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 800 A
Current - Reverse Leakage @ Vr: 1 mA @ 2200 V
Description: DIODE MOD GP 2200V BGPB50SB
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 390A
Supplier Device Package: BG-PB50SB-1
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 800 A
Current - Reverse Leakage @ Vr: 1 mA @ 2200 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 6378.18 грн |
| BSM200GB120DLCE3256HOSA1 |
Виробник: Infineon Technologies
Description: BSM200GB120DLC - IGBT
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 420 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1550 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
Description: BSM200GB120DLC - IGBT
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 420 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1550 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
товар відсутній
| BA892-02V |
|
Виробник: Infineon Technologies
Description: SILICON RF SWITCHING DIODE
Packaging: Bulk
Package / Case: SC-79, SOD-523
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
Resistance @ If, F: 500mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: PG-SC79-2-1
Part Status: Active
Current - Max: 100 mA
Description: SILICON RF SWITCHING DIODE
Packaging: Bulk
Package / Case: SC-79, SOD-523
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
Resistance @ If, F: 500mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: PG-SC79-2-1
Part Status: Active
Current - Max: 100 mA
товар відсутній
| IRL40S212ARMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 150µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 25 V
Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 150µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 25 V
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 96.7 грн |
| 1600+ | 79.01 грн |
| 2400+ | 75.06 грн |
| 5600+ | 67.79 грн |
| SLE 66R35 MCC2 |
|
Виробник: Infineon Technologies
Description: IC RFID TRANSP 13.56MHZ MCC2-2-1
Description: IC RFID TRANSP 13.56MHZ MCC2-2-1
товар відсутній
| SP4001511XTMA1 |
|
Виробник: Infineon Technologies
Description: SENSOR 203.05PSIA DSOSP14
Packaging: Tape & Reel (TR)
Package / Case: 14-BSSOP (0.220", 5.60mm Width)
Output Type: RF
Mounting Type: Surface Mount
Operating Pressure: 14.5PSI ~ 203.05PSI (100kPa ~ 1400kPa)
Pressure Type: Absolute
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.6V
Applications: Board Mount
Supplier Device Package: PG-DSOSP-14-82
Port Style: No Port
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: SENSOR 203.05PSIA DSOSP14
Packaging: Tape & Reel (TR)
Package / Case: 14-BSSOP (0.220", 5.60mm Width)
Output Type: RF
Mounting Type: Surface Mount
Operating Pressure: 14.5PSI ~ 203.05PSI (100kPa ~ 1400kPa)
Pressure Type: Absolute
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.6V
Applications: Board Mount
Supplier Device Package: PG-DSOSP-14-82
Port Style: No Port
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
товар відсутній
| SP4001511XTMA1 |
|
Виробник: Infineon Technologies
Description: SENSOR 203.05PSIA DSOSP14
Packaging: Cut Tape (CT)
Package / Case: 14-BSSOP (0.220", 5.60mm Width)
Output Type: RF
Mounting Type: Surface Mount
Operating Pressure: 14.5PSI ~ 203.05PSI (100kPa ~ 1400kPa)
Pressure Type: Absolute
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.6V
Applications: Board Mount
Supplier Device Package: PG-DSOSP-14-82
Port Style: No Port
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: SENSOR 203.05PSIA DSOSP14
Packaging: Cut Tape (CT)
Package / Case: 14-BSSOP (0.220", 5.60mm Width)
Output Type: RF
Mounting Type: Surface Mount
Operating Pressure: 14.5PSI ~ 203.05PSI (100kPa ~ 1400kPa)
Pressure Type: Absolute
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.6V
Applications: Board Mount
Supplier Device Package: PG-DSOSP-14-82
Port Style: No Port
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 1143 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 647.78 грн |
| 10+ | 563.6 грн |
| 25+ | 537.39 грн |
| 100+ | 437.89 грн |
| 250+ | 418.21 грн |
| 500+ | 381.31 грн |
| SAF-XE164FN-24F80L AA |
|
Виробник: Infineon Technologies
Description: IC MCU 16BIT 192KB FLASH 100LQFP
Description: IC MCU 16BIT 192KB FLASH 100LQFP
товар відсутній
| IPB120N06S403ATMA2 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 120A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13150 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 120A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13150 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
| FF23MR12W1M1C11BPSA1 |
Виробник: Infineon Technologies
Description: LOW POWER EASY AG-EASY1BM-2
Packaging: Tray
Part Status: Obsolete
Description: LOW POWER EASY AG-EASY1BM-2
Packaging: Tray
Part Status: Obsolete
товар відсутній
| BGA824N6E6329XTSA1 |
|
Виробник: Infineon Technologies
Description: IC AMP GALI 1.164-1.615GHZ TSNP6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.164GHz ~ 1.615GHz
RF Type: Galileo, GLONASS, GPS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 19.5dB
Current - Supply: 3.9mA
Noise Figure: 0.7dB
P1dB: -9dBm
Test Frequency: 1.164GHz ~ 1.3GHz
Supplier Device Package: PG-TSNP-6-2
Part Status: Active
Description: IC AMP GALI 1.164-1.615GHZ TSNP6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.164GHz ~ 1.615GHz
RF Type: Galileo, GLONASS, GPS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 19.5dB
Current - Supply: 3.9mA
Noise Figure: 0.7dB
P1dB: -9dBm
Test Frequency: 1.164GHz ~ 1.3GHz
Supplier Device Package: PG-TSNP-6-2
Part Status: Active
на замовлення 48000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 12000+ | 18.81 грн |
| 24000+ | 17.61 грн |
| EVALISO1H815GTOBO1 |
|
Виробник: Infineon Technologies
Description: EVAL ISO1H815G
Packaging: Bulk
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Utilized IC / Part: ISO1H815G
Supplied Contents: Board(s)
Primary Attributes: 8-Channel (Octal)
Embedded: No
Part Status: Active
Description: EVAL ISO1H815G
Packaging: Bulk
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Utilized IC / Part: ISO1H815G
Supplied Contents: Board(s)
Primary Attributes: 8-Channel (Octal)
Embedded: No
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4390.75 грн |
| T3801N36TOFVTXPSA1 |
|
Виробник: Infineon Technologies
Description: SCR MODULE 3600V 6020A DO200AE
Packaging: Tray
Package / Case: TO-200AF
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 350 mA
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 91000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 5370 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 6020 A
Voltage - Off State: 3.6 kV
Description: SCR MODULE 3600V 6020A DO200AE
Packaging: Tray
Package / Case: TO-200AF
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 350 mA
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 91000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 5370 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 6020 A
Voltage - Off State: 3.6 kV
товар відсутній
| IFX54211MBV33HTSA1 |
|
Виробник: Infineon Technologies
Description: IC REG LINEAR 3.3V 150MA SCT595
Packaging: Bulk
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 18V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5-1
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Obsolete
PSRR: 63dB (10kHz)
Voltage Dropout (Max): 0.57V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 200 µA
Description: IC REG LINEAR 3.3V 150MA SCT595
Packaging: Bulk
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 18V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5-1
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Obsolete
PSRR: 63dB (10kHz)
Voltage Dropout (Max): 0.57V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 200 µA
на замовлення 170749 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1199+ | 17.49 грн |
| ISP98DP10LMXTSA1 |
|
Виробник: Infineon Technologies
Description: SMALL SIGNAL MOSFETS PG-SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 930mA (Ta), 1.55A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 900mA, 10V
Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 165µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 50 V
Description: SMALL SIGNAL MOSFETS PG-SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 930mA (Ta), 1.55A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 900mA, 10V
Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 165µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 50 V
товар відсутній
| ISP98DP10LMXTSA1 |
|
Виробник: Infineon Technologies
Description: SMALL SIGNAL MOSFETS PG-SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 930mA (Ta), 1.55A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 900mA, 10V
Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 165µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 50 V
Description: SMALL SIGNAL MOSFETS PG-SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 930mA (Ta), 1.55A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 900mA, 10V
Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 165µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 50 V
товар відсутній
| IPN65R1K5CE |
|
Виробник: Infineon Technologies
Description: SMALL SIGNAL FIELD-EFFECT TRANSI
Packaging: Bulk
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-SOT223
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
Description: SMALL SIGNAL FIELD-EFFECT TRANSI
Packaging: Bulk
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-SOT223
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
товар відсутній
| IPN65R1K5CEATMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 5.2A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-SOT223
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
Description: MOSFET N-CH 650V 5.2A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-SOT223
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
товар відсутній
| IPW65R310CFD |
|
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V
Power Dissipation (Max): 104.2W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 440µA
Supplier Device Package: PG-TO247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V
Power Dissipation (Max): 104.2W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 440µA
Supplier Device Package: PG-TO247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
на замовлення 10341 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 219+ | 95.93 грн |
| IPW65R155CFD7XKSA1 |
|
Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 6.4A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 400 V
Description: HIGH POWER_NEW
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 6.4A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 400 V
на замовлення 240 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 209.87 грн |
| 90+ | 173.22 грн |
| IPW65R125CFD7XKSA1 |
|
Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.5A, 10V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 420µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V
Description: HIGH POWER_NEW
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.5A, 10V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 420µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V
на замовлення 235 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 307.16 грн |
| 30+ | 234.21 грн |
| 120+ | 200.75 грн |
| IPW65R090CFD7XKSA1 |
|
Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 12.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Description: HIGH POWER_NEW
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 12.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
на замовлення 179 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 405.24 грн |
| 30+ | 309.28 грн |
| 120+ | 265.09 грн |
| IPW65R018CFD7XKSA1 |
|
Виробник: Infineon Technologies
Description: 650 V COOLMOS CFD7 SUPERJUNCTION
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 58.2A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.91mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11659 pF @ 400 V
Description: 650 V COOLMOS CFD7 SUPERJUNCTION
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 58.2A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.91mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11659 pF @ 400 V
товар відсутній