Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (136447) > Сторінка 396 з 2275
Фото | Назва | Виробник | Інформація |
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FF900R12ME7B11BOSA1 | Infineon Technologies |
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на замовлення 6 шт: термін постачання 21-31 дні (днів) |
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FF900R12IE4VBOSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Not For New Designs Current - Collector (Ic) (Max): 900 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 5100 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 54 nF @ 25 V |
на замовлення 450 шт: термін постачання 21-31 дні (днів) |
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FF900R12IP4VBOSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Not For New Designs Current - Collector (Ic) (Max): 900 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 5100 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 54 nF @ 25 V |
на замовлення 74 шт: термін постачання 21-31 дні (днів) |
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FF900R12IP4DVBOSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Not For New Designs Current - Collector (Ic) (Max): 900 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 5100 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 54 nF @ 25 V |
на замовлення 15 шт: термін постачання 21-31 дні (днів) |
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FF900R12ME7B11NPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 900A NTC Thermistor: Yes Supplier Device Package: AG-ECONOD-3 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 900 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 100 µA Input Capacitance (Cies) @ Vce: 122 nF @ 25 V |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
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F3L400R07ME4B23BOSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 400A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 450 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 1150 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 26 nF @ 25 V |
товар відсутній |
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CY25811SXC | Infineon Technologies |
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на замовлення 176 шт: термін постачання 21-31 дні (днів) |
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BSC052N08NS5ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 47.5A, 10V Power Dissipation (Max): 2.5W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 49µA Supplier Device Package: PG-TDSON-8-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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BTS712N1NT | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 DSO-20 Features: Auto Restart, Status Flag Packaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 4 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 165mOhm Input Type: Non-Inverting Voltage - Load: 5V ~ 34V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.7A Ratio - Input:Output: 1:1 Supplier Device Package: PG-DSO-20-31 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage |
товар відсутній |
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TLE4263GMXUMA2 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 50 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: PG-DSO-14-61 Voltage - Output (Min/Fixed): 5V Control Features: Reset, Wake-Up, Watchdog Part Status: Active PSRR: 54dB (100Hz) Voltage Dropout (Max): 0.5V @ 150mA Protection Features: Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 23 mA Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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TLE4923HALA1 | Infineon Technologies |
![]() Features: Temperature Compensated Packaging: Bulk Package / Case: 3-SIP, SSO-3-06 Output Type: Digital Mounting Type: Through Hole Function: Special Purpose Voltage - Supply: 4.5V ~ 18V Technology: Hall Effect Current - Supply (Max): 13.6mA Supplier Device Package: P-SSO-3-6 Part Status: Obsolete |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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TLE4927CXAAD47XAMA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 3-SSIP Module Polarization: North Pole, South Pole Mounting Type: Through Hole Technology: Hall Effect Supplier Device Package: PG-SSO-3-92 Part Status: Active |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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TLE4925C | Infineon Technologies |
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на замовлення 61290 шт: термін постачання 21-31 дні (днів) |
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TLE4925CHAMA3 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 3-SSIP Module Output Type: Open Drain Polarization: North Pole, South Pole Mounting Type: Through Hole Function: Special Purpose Operating Temperature: -40°C ~ 175°C (TJ) Voltage - Supply: 3.3V ~ 18V Technology: Hall Effect Current - Output (Max): 50mA Current - Supply (Max): 9mA Supplier Device Package: PG-SSO-3-91 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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TLE4926CHTNE6747HAMA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 3-SSIP Module Polarization: North Pole, South Pole Mounting Type: Through Hole Function: Special Purpose Technology: Hall Effect Supplier Device Package: PG-SSO-3-92 Part Status: Active |
на замовлення 16000 шт: термін постачання 21-31 дні (днів) |
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TLE4928CE6547 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 3-SSIP Module Polarization: North Pole, South Pole Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C Technology: Hall Effect Supplier Device Package: PG-SSO-3-92 Part Status: Active |
на замовлення 10460 шт: термін постачання 21-31 дні (днів) |
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TLE4928C-NE6947 | Infineon Technologies |
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на замовлення 64500 шт: термін постачання 21-31 дні (днів) |
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TLE4928C-N E6947 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 3-SSIP Module Polarization: North Pole, South Pole Mounting Type: Through Hole Function: Bipolar Switch Technology: Hall Effect Supplier Device Package: PG-SSO-3-92 Part Status: Active |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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TLE4926C-HTNE6547 | Infineon Technologies |
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на замовлення 3675 шт: термін постачання 21-31 дні (днів) |
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TLE4926CHTNE6547 | Infineon Technologies |
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на замовлення 3750 шт: термін постачання 21-31 дні (днів) |
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TLE4925CHAMA2 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 3-SSIP Module Output Type: Open Drain Polarization: North Pole, South Pole Mounting Type: Through Hole Function: Special Purpose Operating Temperature: -40°C ~ 175°C (TJ) Voltage - Supply: 3.3V ~ 18V Technology: Hall Effect Current - Output (Max): 50mA Current - Supply (Max): 9mA Supplier Device Package: PG-SSO-3-91 |
на замовлення 16000 шт: термін постачання 21-31 дні (днів) |
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TLE4928CXAAF47XAMA1 | Infineon Technologies |
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на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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TLE4924CB2E6547XTMA1 | Infineon Technologies |
![]() Packaging: Bulk Part Status: Discontinued at Digi-Key |
на замовлення 72138 шт: термін постачання 21-31 дні (днів) |
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TLE4928CE6547HAMA1 | Infineon Technologies |
![]() Packaging: Bulk Part Status: Obsolete |
на замовлення 2871 шт: термін постачання 21-31 дні (днів) |
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TLE4928CNE6947HAMA1 | Infineon Technologies |
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на замовлення 10500 шт: термін постачання 21-31 дні (днів) |
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TLE4922XINFHALA1 | Infineon Technologies |
![]() Packaging: Tape & Box (TB) Package / Case: 4-SIP, SSO-4-1 Output Type: Analog Voltage Mounting Type: Through Hole Axis: Single Operating Temperature: -40°C ~ 155°C Voltage - Supply: 4.5V ~ 18V Bandwidth: 8kHz Technology: Hall Effect Sensing Range: ±400mT Current - Output (Max): 8mA Current - Supply (Max): 7mA Supplier Device Package: PG-SSO-4-1 Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
товар відсутній |
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TLE4922XINFHALA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 4-SIP, SSO-4-1 Output Type: Analog Voltage Mounting Type: Through Hole Axis: Single Operating Temperature: -40°C ~ 155°C Voltage - Supply: 4.5V ~ 18V Bandwidth: 8kHz Technology: Hall Effect Sensing Range: ±400mT Current - Output (Max): 8mA Current - Supply (Max): 7mA Supplier Device Package: PG-SSO-4-1 Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
на замовлення 1979 шт: термін постачання 21-31 дні (днів) |
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TLE4928HALA1 | Infineon Technologies | Description: MAGNETIC SWITCH SPEC PURP SSO-3 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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TLE4922XANFHALA1 | Infineon Technologies |
![]() Packaging: Tape & Box (TB) Package / Case: 4-SIP, SSO-4-1 Output Type: Analog Voltage Mounting Type: Through Hole Axis: Single Operating Temperature: -40°C ~ 155°C Voltage - Supply: 4.5V ~ 18V Bandwidth: 8kHz Technology: Hall Effect Sensing Range: ±400mT Current - Output (Max): 8mA Current - Supply (Max): 7mA Supplier Device Package: PG-SSO-4-1 Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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TLE4922XANFHALA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 4-SIP, SSO-4-1 Output Type: Analog Voltage Mounting Type: Through Hole Axis: Single Operating Temperature: -40°C ~ 155°C Voltage - Supply: 4.5V ~ 18V Bandwidth: 8kHz Technology: Hall Effect Sensing Range: ±400mT Current - Output (Max): 8mA Current - Supply (Max): 7mA Supplier Device Package: PG-SSO-4-1 Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 1096 шт: термін постачання 21-31 дні (днів) |
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TLE4926CHTE6547HAMA1 | Infineon Technologies |
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товар відсутній |
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IPB80R290C3AATMA2 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 1mA Supplier Device Package: PG-TO263-3-2 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V Qualification: AEC-Q101 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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IPB80R290C3AATMA2 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 1mA Supplier Device Package: PG-TO263-3-2 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V Qualification: AEC-Q101 |
на замовлення 9641 шт: термін постачання 21-31 дні (днів) |
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ICE3AR10080JZ | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Mounting Type: Through Hole Operating Temperature: -20°C ~ 150°C (TJ) Duty Cycle: 75% Frequency - Switching: 100kHz Internal Switch(s): Yes Voltage - Breakdown: 800V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V Supplier Device Package: PG-DIP-7-1 Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage, UVLO Voltage - Start Up: 17 V Control Features: Soft Start Part Status: Active Power (Watts): 22 W |
на замовлення 6167 шт: термін постачання 21-31 дні (днів) |
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ICE3A2065 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -25°C ~ 130°C (TJ) Duty Cycle: 75% Frequency - Switching: 100kHz Internal Switch(s): Yes Voltage - Breakdown: 650V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 10.5V ~ 26V Supplier Device Package: PG-DIP-8 Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 18 V Control Features: Soft Start Part Status: Active Power (Watts): 57 W |
товар відсутній |
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IRL530NSTRRPBF | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V Power Dissipation (Max): 3.8W (Ta), 79W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V |
товар відсутній |
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IRL530NSTRRPBF | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V Power Dissipation (Max): 3.8W (Ta), 79W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V |
товар відсутній |
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IPDD60R125CFD7XTMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 6.8A, 10V Power Dissipation (Max): 176W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 340µA Supplier Device Package: PG-HDSOP-10-1 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1329 pF @ 400 V |
товар відсутній |
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IPDD60R125CFD7XTMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 6.8A, 10V Power Dissipation (Max): 176W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 340µA Supplier Device Package: PG-HDSOP-10-1 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1329 pF @ 400 V |
на замовлення 1698 шт: термін постачання 21-31 дні (днів) |
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BSS126IXTSA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V FET Feature: Depletion Mode Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.7V @ 8µA Supplier Device Package: PG-SOT23-3-5 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 25 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BSS126IXTSA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V FET Feature: Depletion Mode Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.7V @ 8µA Supplier Device Package: PG-SOT23-3-5 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 25 V |
на замовлення 4025 шт: термін постачання 21-31 дні (днів) |
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BSS126 H6906 | Infineon Technologies |
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TDA4916GG | Infineon Technologies |
![]() Packaging: Bulk Part Status: Active |
на замовлення 667 шт: термін постачання 21-31 дні (днів) |
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BTS5210G | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 110mOhm Input Type: Non-Inverting Voltage - Load: 5.5V ~ 40V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.8A Ratio - Input:Output: 1:1 Supplier Device Package: PG-DSO-14 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage Part Status: Active |
товар відсутній |
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CY7C1356SV25-166AXC | Infineon Technologies |
Description: IC SRAM 9MBIT PARALLEL 100TQFP Packaging: Bag Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 9Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.375V ~ 2.625V Technology: SRAM - Synchronous, SDR Clock Frequency: 166 MHz Memory Format: SRAM Supplier Device Package: 100-TQFP (14x14) Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 512K x 18 DigiKey Programmable: Not Verified |
на замовлення 385 шт: термін постачання 21-31 дні (днів) |
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PX8897EDQGR2ER1232AXUMA1 | Infineon Technologies | Description: IC REGULATOR PG-VQFN-48-2 |
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PX8897EDQGR2ER1233AXUMA1 | Infineon Technologies | Description: IC REGULATOR PG-VQFN-48-2 |
товар відсутній |
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ADM6992X-AD-T-1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 128-BFQFP Function: Switch Operating Temperature: 0°C ~ 115°C Voltage - Supply: 3.135V ~ 3.465V Protocol: Ethernet Standards: 10/100 Base-FX/T/TX PHY Supplier Device Package: PG-BFQFP-128 Part Status: Obsolete DigiKey Programmable: Not Verified |
на замовлення 384 шт: термін постачання 21-31 дні (днів) |
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ADM6992KX-AB-T-1-INF | Infineon Technologies |
![]() Packaging: Tray Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 2486 шт: термін постачання 21-31 дні (днів) |
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IRFS7534TRLPBF | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Power Dissipation (Max): 294W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: PG-TO263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 279 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10034 pF @ 25 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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IRFS7534TRLPBF | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Power Dissipation (Max): 294W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: PG-TO263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 279 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10034 pF @ 25 V |
на замовлення 1843 шт: термін постачання 21-31 дні (днів) |
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IRFS7534TRL7PP | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V Power Dissipation (Max): 290W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: D2PAK (7-Lead) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9990 pF @ 25 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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IRFS7534TRL7PP | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V Power Dissipation (Max): 290W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: D2PAK (7-Lead) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9990 pF @ 25 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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SAF-XC836M-1FRIAB | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 28-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 4KB (4K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: XC800 Data Converters: A/D 8x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V Connectivity: I2C, SSC, UART/USART Peripherals: Brown-out Detect/Reset, LED, POR, PWM, WDT Supplier Device Package: PG-TSSOP-28-1 Part Status: Active Number of I/O: 25 DigiKey Programmable: Not Verified |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SAK-XC836MT-2FRAAB | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 28-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 8KB (8K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: XC800 Data Converters: A/D 8x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V Connectivity: I²C, SSC, UART/USART Peripherals: Brown-out Detect/Reset, LED, POR, PWM, WDT Supplier Device Package: PG-TSSOP-28-1 Part Status: Active Number of I/O: 25 DigiKey Programmable: Not Verified |
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6ED003L06FXUMA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 13V ~ 17.5V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 620 V Supplier Device Package: PG-DSO-28-17 Rise / Fall Time (Typ): 60ns, 26ns Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: IGBT, N-Channel, P-Channel MOSFET Logic Voltage - VIL, VIH: 1.1V, 1.7V Current - Peak Output (Source, Sink): 165mA, 375mA Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 19812 шт: термін постачання 21-31 дні (днів) |
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6ED003L06-FXUMA1 | Infineon Technologies |
Description: 6ED003L06 - HALF-BRIDGE BASED MO Packaging: Bulk Package / Case: 28-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 13V ~ 17.5V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 620 V Supplier Device Package: PG-TSSOP-28 Rise / Fall Time (Typ): 60ns, 26ns Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: IGBT, N-Channel, P-Channel MOSFET Logic Voltage - VIL, VIH: 1.1V, 1.7V Current - Peak Output (Source, Sink): 165mA, 375mA Part Status: Active DigiKey Programmable: Not Verified |
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111-4204PBF | Infineon Technologies | Description: IC REGULATOR SMD |
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SIDC73D170E6X1SA2 | Infineon Technologies |
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CY62157EV30LL-45ZSXAT | Infineon Technologies |
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на замовлення 74 шт: термін постачання 21-31 дні (днів) |
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FF900R12ME7B11BOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1200V 900A
Description: IGBT MOD 1200V 900A
на замовлення 6 шт:
термін постачання 21-31 дні (днів)FF900R12IE4VBOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1200V 900A 5100W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 5100 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
Description: IGBT MOD 1200V 900A 5100W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 5100 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
на замовлення 450 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 41136.44 грн |
FF900R12IP4VBOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1200V 900A 5100W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 5100 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
Description: IGBT MOD 1200V 900A 5100W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 5100 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
на замовлення 74 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 42245.14 грн |
FF900R12IP4DVBOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1200V 900A 5100W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 5100 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
Description: IGBT MOD 1200V 900A 5100W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 5100 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
на замовлення 15 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 46692.15 грн |
FF900R12ME7B11NPSA1 |
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Виробник: Infineon Technologies
Description: MEDIUM POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 122 nF @ 25 V
Description: MEDIUM POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 122 nF @ 25 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 19920.01 грн |
F3L400R07ME4B23BOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 650V 450A 1150W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 400A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1150 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
Description: IGBT MOD 650V 450A 1150W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 400A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1150 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
товар відсутній
CY25811SXC |
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Виробник: Infineon Technologies
Description: IC CLOCK GEN 3.3V SS 8-SOIC
Description: IC CLOCK GEN 3.3V SS 8-SOIC
на замовлення 176 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
62+ | 338.29 грн |
BSC052N08NS5ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 95A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 47.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
Description: MOSFET N-CH 80V 95A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 47.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 68.65 грн |
BTS712N1NT |
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-20
Features: Auto Restart, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 165mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-20-31
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Description: IC PWR SWITCH N-CHAN 1:1 DSO-20
Features: Auto Restart, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 165mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-20-31
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
товар відсутній
TLE4263GMXUMA2 |
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Виробник: Infineon Technologies
Description: IC REG LINEAR 5V 200MA DSO14-61
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14-61
Voltage - Output (Min/Fixed): 5V
Control Features: Reset, Wake-Up, Watchdog
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 150mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 23 mA
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LINEAR 5V 200MA DSO14-61
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14-61
Voltage - Output (Min/Fixed): 5V
Control Features: Reset, Wake-Up, Watchdog
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 150mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 23 mA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 74.65 грн |
TLE4923HALA1 |
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Виробник: Infineon Technologies
Description: MAG SWITCH SPEC PURP SSO-3-6
Features: Temperature Compensated
Packaging: Bulk
Package / Case: 3-SIP, SSO-3-06
Output Type: Digital
Mounting Type: Through Hole
Function: Special Purpose
Voltage - Supply: 4.5V ~ 18V
Technology: Hall Effect
Current - Supply (Max): 13.6mA
Supplier Device Package: P-SSO-3-6
Part Status: Obsolete
Description: MAG SWITCH SPEC PURP SSO-3-6
Features: Temperature Compensated
Packaging: Bulk
Package / Case: 3-SIP, SSO-3-06
Output Type: Digital
Mounting Type: Through Hole
Function: Special Purpose
Voltage - Supply: 4.5V ~ 18V
Technology: Hall Effect
Current - Supply (Max): 13.6mA
Supplier Device Package: P-SSO-3-6
Part Status: Obsolete
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
160+ | 132.44 грн |
TLE4927CXAAD47XAMA1 |
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Виробник: Infineon Technologies
Description: MAGNETIC SWITCH DYN HALL EFFECT
Packaging: Bulk
Package / Case: 3-SSIP Module
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Technology: Hall Effect
Supplier Device Package: PG-SSO-3-92
Part Status: Active
Description: MAGNETIC SWITCH DYN HALL EFFECT
Packaging: Bulk
Package / Case: 3-SSIP Module
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Technology: Hall Effect
Supplier Device Package: PG-SSO-3-92
Part Status: Active
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
140+ | 164.05 грн |
TLE4925C |
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Виробник: Infineon Technologies
Description: MAG SWITCH SPEC PURP SSO-3-9
Description: MAG SWITCH SPEC PURP SSO-3-9
на замовлення 61290 шт:
термін постачання 21-31 дні (днів)TLE4925CHAMA3 |
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Виробник: Infineon Technologies
Description: DYNAMIC DIFFERENTIAL HALL EFFECT
Packaging: Bulk
Package / Case: 3-SSIP Module
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3.3V ~ 18V
Technology: Hall Effect
Current - Output (Max): 50mA
Current - Supply (Max): 9mA
Supplier Device Package: PG-SSO-3-91
Description: DYNAMIC DIFFERENTIAL HALL EFFECT
Packaging: Bulk
Package / Case: 3-SSIP Module
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3.3V ~ 18V
Technology: Hall Effect
Current - Output (Max): 50mA
Current - Supply (Max): 9mA
Supplier Device Package: PG-SSO-3-91
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
126+ | 167.26 грн |
TLE4926CHTNE6747HAMA1 |
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Виробник: Infineon Technologies
Description: MAGNETIC SPEED SENSORS
Packaging: Bulk
Package / Case: 3-SSIP Module
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Technology: Hall Effect
Supplier Device Package: PG-SSO-3-92
Part Status: Active
Description: MAGNETIC SPEED SENSORS
Packaging: Bulk
Package / Case: 3-SSIP Module
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Technology: Hall Effect
Supplier Device Package: PG-SSO-3-92
Part Status: Active
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
116+ | 182.72 грн |
TLE4928CE6547 |
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Виробник: Infineon Technologies
Description: MAGNETIC SWITCH SPEED SENSOR
Packaging: Bulk
Package / Case: 3-SSIP Module
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C
Technology: Hall Effect
Supplier Device Package: PG-SSO-3-92
Part Status: Active
Description: MAGNETIC SWITCH SPEED SENSOR
Packaging: Bulk
Package / Case: 3-SSIP Module
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C
Technology: Hall Effect
Supplier Device Package: PG-SSO-3-92
Part Status: Active
на замовлення 10460 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
96+ | 224.12 грн |
TLE4928C-NE6947 |
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Виробник: Infineon Technologies
Description: MAGNETIC SWITCH SPEED SENSOR
Description: MAGNETIC SWITCH SPEED SENSOR
на замовлення 64500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
93+ | 237.72 грн |
TLE4928C-N E6947 |
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Виробник: Infineon Technologies
Description: MAGNETIC SWITCH SPEED SENSOR
Packaging: Bulk
Package / Case: 3-SSIP Module
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Bipolar Switch
Technology: Hall Effect
Supplier Device Package: PG-SSO-3-92
Part Status: Active
Description: MAGNETIC SWITCH SPEED SENSOR
Packaging: Bulk
Package / Case: 3-SSIP Module
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Bipolar Switch
Technology: Hall Effect
Supplier Device Package: PG-SSO-3-92
Part Status: Active
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
86+ | 243.48 грн |
TLE4926C-HTNE6547 |
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Виробник: Infineon Technologies
Description: MAGNETIC SWITCH SPEED SENSOR
Description: MAGNETIC SWITCH SPEED SENSOR
на замовлення 3675 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
93+ | 237.72 грн |
TLE4926CHTNE6547 |
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Виробник: Infineon Technologies
Description: MAGNETIC SWITCH SPEED SENSOR
Description: MAGNETIC SWITCH SPEED SENSOR
на замовлення 3750 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
93+ | 237.72 грн |
TLE4925CHAMA2 |
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Виробник: Infineon Technologies
Description: DYNAMIC DIFFERENTIAL HALL EFFECT
Packaging: Bulk
Package / Case: 3-SSIP Module
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3.3V ~ 18V
Technology: Hall Effect
Current - Output (Max): 50mA
Current - Supply (Max): 9mA
Supplier Device Package: PG-SSO-3-91
Description: DYNAMIC DIFFERENTIAL HALL EFFECT
Packaging: Bulk
Package / Case: 3-SSIP Module
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3.3V ~ 18V
Technology: Hall Effect
Current - Output (Max): 50mA
Current - Supply (Max): 9mA
Supplier Device Package: PG-SSO-3-91
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
126+ | 167.26 грн |
TLE4928CXAAF47XAMA1 |
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Виробник: Infineon Technologies
Description: TLE4928C - DYNAMIC DIFFERENTIAL
Description: TLE4928C - DYNAMIC DIFFERENTIAL
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
137+ | 153.45 грн |
TLE4924CB2E6547XTMA1 |
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Виробник: Infineon Technologies
Description: IC HALL EFFECT SENSOR SSOM-3
Packaging: Bulk
Part Status: Discontinued at Digi-Key
Description: IC HALL EFFECT SENSOR SSOM-3
Packaging: Bulk
Part Status: Discontinued at Digi-Key
на замовлення 72138 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
92+ | 238.11 грн |
TLE4928CE6547HAMA1 |
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Виробник: Infineon Technologies
Description: MAGNETIC SWITCH HALL EFF SSO-3
Packaging: Bulk
Part Status: Obsolete
Description: MAGNETIC SWITCH HALL EFF SSO-3
Packaging: Bulk
Part Status: Obsolete
на замовлення 2871 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
96+ | 224.12 грн |
TLE4928CNE6947HAMA1 |
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Виробник: Infineon Technologies
Description: MAGNETIC SWITCH BIPOLAR 3SSO
Description: MAGNETIC SWITCH BIPOLAR 3SSO
на замовлення 10500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
93+ | 249.99 грн |
TLE4922XINFHALA1 |
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Виробник: Infineon Technologies
Description: SENSOR HALL ANALOG SSO4-1
Packaging: Tape & Box (TB)
Package / Case: 4-SIP, SSO-4-1
Output Type: Analog Voltage
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 155°C
Voltage - Supply: 4.5V ~ 18V
Bandwidth: 8kHz
Technology: Hall Effect
Sensing Range: ±400mT
Current - Output (Max): 8mA
Current - Supply (Max): 7mA
Supplier Device Package: PG-SSO-4-1
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: SENSOR HALL ANALOG SSO4-1
Packaging: Tape & Box (TB)
Package / Case: 4-SIP, SSO-4-1
Output Type: Analog Voltage
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 155°C
Voltage - Supply: 4.5V ~ 18V
Bandwidth: 8kHz
Technology: Hall Effect
Sensing Range: ±400mT
Current - Output (Max): 8mA
Current - Supply (Max): 7mA
Supplier Device Package: PG-SSO-4-1
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
товар відсутній
TLE4922XINFHALA1 |
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Виробник: Infineon Technologies
Description: SENSOR HALL ANALOG SSO4-1
Packaging: Cut Tape (CT)
Package / Case: 4-SIP, SSO-4-1
Output Type: Analog Voltage
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 155°C
Voltage - Supply: 4.5V ~ 18V
Bandwidth: 8kHz
Technology: Hall Effect
Sensing Range: ±400mT
Current - Output (Max): 8mA
Current - Supply (Max): 7mA
Supplier Device Package: PG-SSO-4-1
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: SENSOR HALL ANALOG SSO4-1
Packaging: Cut Tape (CT)
Package / Case: 4-SIP, SSO-4-1
Output Type: Analog Voltage
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 155°C
Voltage - Supply: 4.5V ~ 18V
Bandwidth: 8kHz
Technology: Hall Effect
Sensing Range: ±400mT
Current - Output (Max): 8mA
Current - Supply (Max): 7mA
Supplier Device Package: PG-SSO-4-1
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 1979 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 229.68 грн |
10+ | 180.54 грн |
25+ | 146.46 грн |
50+ | 127.85 грн |
100+ | 121.46 грн |
500+ | 102.28 грн |
1000+ | 94.32 грн |
TLE4928HALA1 |
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH SPEC PURP SSO-3
Description: MAGNETIC SWITCH SPEC PURP SSO-3
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 531.08 грн |
5+ | 450.72 грн |
10+ | 398.18 грн |
25+ | 303.19 грн |
50+ | 267.95 грн |
100+ | 260.89 грн |
500+ | 241.24 грн |
TLE4922XANFHALA1 |
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Виробник: Infineon Technologies
Description: SENSOR HALL ANALOG SSO4-1
Packaging: Tape & Box (TB)
Package / Case: 4-SIP, SSO-4-1
Output Type: Analog Voltage
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 155°C
Voltage - Supply: 4.5V ~ 18V
Bandwidth: 8kHz
Technology: Hall Effect
Sensing Range: ±400mT
Current - Output (Max): 8mA
Current - Supply (Max): 7mA
Supplier Device Package: PG-SSO-4-1
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: SENSOR HALL ANALOG SSO4-1
Packaging: Tape & Box (TB)
Package / Case: 4-SIP, SSO-4-1
Output Type: Analog Voltage
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 155°C
Voltage - Supply: 4.5V ~ 18V
Bandwidth: 8kHz
Technology: Hall Effect
Sensing Range: ±400mT
Current - Output (Max): 8mA
Current - Supply (Max): 7mA
Supplier Device Package: PG-SSO-4-1
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2000+ | 72.24 грн |
TLE4922XANFHALA1 |
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Виробник: Infineon Technologies
Description: SENSOR HALL ANALOG SSO4-1
Packaging: Cut Tape (CT)
Package / Case: 4-SIP, SSO-4-1
Output Type: Analog Voltage
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 155°C
Voltage - Supply: 4.5V ~ 18V
Bandwidth: 8kHz
Technology: Hall Effect
Sensing Range: ±400mT
Current - Output (Max): 8mA
Current - Supply (Max): 7mA
Supplier Device Package: PG-SSO-4-1
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: SENSOR HALL ANALOG SSO4-1
Packaging: Cut Tape (CT)
Package / Case: 4-SIP, SSO-4-1
Output Type: Analog Voltage
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 155°C
Voltage - Supply: 4.5V ~ 18V
Bandwidth: 8kHz
Technology: Hall Effect
Sensing Range: ±400mT
Current - Output (Max): 8mA
Current - Supply (Max): 7mA
Supplier Device Package: PG-SSO-4-1
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1096 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 190 грн |
10+ | 148.94 грн |
25+ | 120.83 грн |
50+ | 105.5 грн |
100+ | 100.22 грн |
500+ | 84.4 грн |
1000+ | 77.83 грн |
TLE4926CHTE6547HAMA1 |
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Виробник: Infineon Technologies
Description: SENSOR HALL EFFECT SSO-3
Description: SENSOR HALL EFFECT SSO-3
товар відсутній
IPB80R290C3AATMA2 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 17A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V
Qualification: AEC-Q101
Description: MOSFET N-CH 800V 17A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V
Qualification: AEC-Q101
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1000+ | 210.22 грн |
2000+ | 190.61 грн |
IPB80R290C3AATMA2 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 17A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V
Qualification: AEC-Q101
Description: MOSFET N-CH 800V 17A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V
Qualification: AEC-Q101
на замовлення 9641 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 406.7 грн |
10+ | 328.74 грн |
100+ | 265.97 грн |
500+ | 221.87 грн |
ICE3AR10080JZ |
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Виробник: Infineon Technologies
Description: ICE3AR10080 - FIXED FREQUENCY CO
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -20°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Supplier Device Package: PG-DIP-7-1
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage, UVLO
Voltage - Start Up: 17 V
Control Features: Soft Start
Part Status: Active
Power (Watts): 22 W
Description: ICE3AR10080 - FIXED FREQUENCY CO
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -20°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Supplier Device Package: PG-DIP-7-1
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage, UVLO
Voltage - Start Up: 17 V
Control Features: Soft Start
Part Status: Active
Power (Watts): 22 W
на замовлення 6167 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
192+ | 110.34 грн |
ICE3A2065 |
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Виробник: Infineon Technologies
Description: ICE3A2065 - FIXED FREQUENCY COOL
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 130°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 26V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Control Features: Soft Start
Part Status: Active
Power (Watts): 57 W
Description: ICE3A2065 - FIXED FREQUENCY COOL
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 130°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 26V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Control Features: Soft Start
Part Status: Active
Power (Watts): 57 W
товар відсутній
IRL530NSTRRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V
Power Dissipation (Max): 3.8W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Description: MOSFET N-CH 100V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V
Power Dissipation (Max): 3.8W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
товар відсутній
IRL530NSTRRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 17A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V
Power Dissipation (Max): 3.8W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Description: MOSFET N-CH 100V 17A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V
Power Dissipation (Max): 3.8W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
товар відсутній
IPDD60R125CFD7XTMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 27A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6.8A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1329 pF @ 400 V
Description: MOSFET N-CH 600V 27A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6.8A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1329 pF @ 400 V
товар відсутній
IPDD60R125CFD7XTMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 27A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6.8A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1329 pF @ 400 V
Description: MOSFET N-CH 600V 27A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6.8A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1329 pF @ 400 V
на замовлення 1698 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 282.33 грн |
10+ | 228.44 грн |
100+ | 184.82 грн |
500+ | 154.17 грн |
BSS126IXTSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 21MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
FET Feature: Depletion Mode
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 8µA
Supplier Device Package: PG-SOT23-3-5
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 25 V
Description: MOSFET N-CH 600V 21MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
FET Feature: Depletion Mode
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 8µA
Supplier Device Package: PG-SOT23-3-5
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 25 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 8.15 грн |
BSS126IXTSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 21MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
FET Feature: Depletion Mode
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 8µA
Supplier Device Package: PG-SOT23-3-5
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 25 V
Description: MOSFET N-CH 600V 21MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
FET Feature: Depletion Mode
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 8µA
Supplier Device Package: PG-SOT23-3-5
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 25 V
на замовлення 4025 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 29.76 грн |
13+ | 22.63 грн |
100+ | 13.55 грн |
500+ | 11.77 грн |
1000+ | 8 грн |
BSS126 H6906 |
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Виробник: Infineon Technologies
Description: SMALL SIGNAL N-CHANNEL MOSFET
Description: SMALL SIGNAL N-CHANNEL MOSFET
товар відсутній
TDA4916GG |
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на замовлення 667 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
667+ | 35.93 грн |
BTS5210G |
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Виробник: Infineon Technologies
Description: BUFFER/INVERTER BASED PERIPHERAL
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 110mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 40V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
Description: BUFFER/INVERTER BASED PERIPHERAL
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 110mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 40V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
товар відсутній
CY7C1356SV25-166AXC |
Виробник: Infineon Technologies
Description: IC SRAM 9MBIT PARALLEL 100TQFP
Packaging: Bag
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 166 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 512K x 18
DigiKey Programmable: Not Verified
Description: IC SRAM 9MBIT PARALLEL 100TQFP
Packaging: Bag
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 166 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 512K x 18
DigiKey Programmable: Not Verified
на замовлення 385 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 858 грн |
PX8897EDQGR2ER1232AXUMA1 |
Виробник: Infineon Technologies
Description: IC REGULATOR PG-VQFN-48-2
Description: IC REGULATOR PG-VQFN-48-2
товар відсутній
PX8897EDQGR2ER1233AXUMA1 |
Виробник: Infineon Technologies
Description: IC REGULATOR PG-VQFN-48-2
Description: IC REGULATOR PG-VQFN-48-2
товар відсутній
ADM6992X-AD-T-1 |
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Виробник: Infineon Technologies
Description: IC ETHERNET CONVERTER 128QFP
Packaging: Tray
Package / Case: 128-BFQFP
Function: Switch
Operating Temperature: 0°C ~ 115°C
Voltage - Supply: 3.135V ~ 3.465V
Protocol: Ethernet
Standards: 10/100 Base-FX/T/TX PHY
Supplier Device Package: PG-BFQFP-128
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC ETHERNET CONVERTER 128QFP
Packaging: Tray
Package / Case: 128-BFQFP
Function: Switch
Operating Temperature: 0°C ~ 115°C
Voltage - Supply: 3.135V ~ 3.465V
Protocol: Ethernet
Standards: 10/100 Base-FX/T/TX PHY
Supplier Device Package: PG-BFQFP-128
Part Status: Obsolete
DigiKey Programmable: Not Verified
на замовлення 384 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
59+ | 365.73 грн |
ADM6992KX-AB-T-1-INF |
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Виробник: Infineon Technologies
Description: NINJA: FIBER TO FAST ETHERNET CO
Packaging: Tray
Part Status: Active
DigiKey Programmable: Not Verified
Description: NINJA: FIBER TO FAST ETHERNET CO
Packaging: Tray
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2486 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
55+ | 392.94 грн |
IRFS7534TRLPBF |
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Виробник: Infineon Technologies
Description: MOSFET N CH 60V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 279 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10034 pF @ 25 V
Description: MOSFET N CH 60V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 279 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10034 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
800+ | 131.33 грн |
IRFS7534TRLPBF |
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Виробник: Infineon Technologies
Description: MOSFET N CH 60V 195A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 279 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10034 pF @ 25 V
Description: MOSFET N CH 60V 195A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 279 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10034 pF @ 25 V
на замовлення 1843 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 217.47 грн |
10+ | 175.91 грн |
100+ | 142.28 грн |
IRFS7534TRL7PP |
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Виробник: Infineon Technologies
Description: MOSFET N CH 60V 240A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9990 pF @ 25 V
Description: MOSFET N CH 60V 240A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9990 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
800+ | 115.86 грн |
IRFS7534TRL7PP |
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Виробник: Infineon Technologies
Description: MOSFET N CH 60V 240A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9990 pF @ 25 V
Description: MOSFET N CH 60V 240A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9990 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 247.99 грн |
10+ | 200.6 грн |
100+ | 162.27 грн |
SAF-XC836M-1FRIAB |
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Виробник: Infineon Technologies
Description: XC800 I-FAMILY MICROCONTROLLER ,
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V
Connectivity: I2C, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, LED, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-1
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Not Verified
Description: XC800 I-FAMILY MICROCONTROLLER ,
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V
Connectivity: I2C, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, LED, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-1
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Not Verified
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
189+ | 110.99 грн |
SAK-XC836MT-2FRAAB |
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Виробник: Infineon Technologies
Description: XC800 I-FAMILY MICROCONTROLLER ,
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V
Connectivity: I²C, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, LED, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-1
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Not Verified
Description: XC800 I-FAMILY MICROCONTROLLER ,
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V
Connectivity: I²C, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, LED, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-1
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Not Verified
товар відсутній
6ED003L06FXUMA1 |
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Виробник: Infineon Technologies
Description: 6ED003L06 - HALF-BRIDGE BASED MO
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 13V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 620 V
Supplier Device Package: PG-DSO-28-17
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
Part Status: Active
DigiKey Programmable: Not Verified
Description: 6ED003L06 - HALF-BRIDGE BASED MO
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 13V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 620 V
Supplier Device Package: PG-DSO-28-17
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 19812 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
173+ | 125.67 грн |
6ED003L06-FXUMA1 |
Виробник: Infineon Technologies
Description: 6ED003L06 - HALF-BRIDGE BASED MO
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 13V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 620 V
Supplier Device Package: PG-TSSOP-28
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
Part Status: Active
DigiKey Programmable: Not Verified
Description: 6ED003L06 - HALF-BRIDGE BASED MO
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 13V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 620 V
Supplier Device Package: PG-TSSOP-28
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
Part Status: Active
DigiKey Programmable: Not Verified
товар відсутній
SIDC73D170E6X1SA2 |
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Виробник: Infineon Technologies
Description: DIODE GEN PURP 1.7KV 100A WAFER
Description: DIODE GEN PURP 1.7KV 100A WAFER
товар відсутній
CY62157EV30LL-45ZSXAT |
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Виробник: Infineon Technologies
Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Description: IC SRAM 8MBIT PARALLEL 44TSOP II
на замовлення 74 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
28+ | 798.52 грн |