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IR3898MTRPBF IR3898MTRPBF Infineon Technologies ir3898m.pdf?fileId=5546d462533600a4015355d5ebb01815 Description: IC REG BUCK ADJUSTABLE 6A 16PQFN
товар відсутній
IR3898MTRPBF IR3898MTRPBF Infineon Technologies ir3898m.pdf?fileId=5546d462533600a4015355d5ebb01815 Description: IC REG BUCK ADJUSTABLE 6A 16PQFN
на замовлення 3996 шт:
термін постачання 21-31 дні (днів)
IR3899MTRPBF IR3899MTRPBF Infineon Technologies ir3899m.pdf?fileId=5546d462533600a4015355d5f3f71817 Description: IC REG BUCK ADJUSTABLE 9A 16PQFN
товар відсутній
IR3899MTRPBF IR3899MTRPBF Infineon Technologies ir3899m.pdf?fileId=5546d462533600a4015355d5f3f71817 Description: IC REG BUCK ADJUSTABLE 9A 16PQFN
товар відсутній
IR3894MTRPBF IR3894MTRPBF Infineon Technologies ir3894m.pdf?fileId=5546d462533600a4015355d5d4d6180f Description: IC REG BUCK ADJ 12A 16PQFN
товар відсутній
IR3894MTRPBF IR3894MTRPBF Infineon Technologies ir3894m.pdf?fileId=5546d462533600a4015355d5d4d6180f Description: IC REG BUCK ADJ 12A 16PQFN
товар відсутній
CY7C1480V33-200AXC CY7C1480V33-200AXC Infineon Technologies Infineon-CY7C1480BV33_CY7C1482BV33_72_MBIT_(2M_X_36_4M_X_18)_PIPELINED_SYNC_SRAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec45b3739ca Description: IC SRAM 72MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
на замовлення 45 шт:
термін постачання 21-31 дні (днів)
3+10482.69 грн
Мінімальне замовлення: 3
BC817K-25WE6327 BC817K-25WE6327 Infineon Technologies INFNS16504-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR GEN PURPOSE TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT323-3-1
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
товар відсутній
BC817K-16WH6327 Infineon Technologies INFNS16504-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR GEN PURPOSE TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT323-3-1
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
товар відсутній
BC817K-16E6327 BC817K-16E6327 Infineon Technologies INFNS16504-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR GEN PURPOSE TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
7572+2.78 грн
Мінімальне замовлення: 7572
BC817K-25E6327 BC817K-25E6327 Infineon Technologies INFNS16504-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR GEN PURPOSE TRANSISTOR
товар відсутній
BC817K-16 BC817K-16 Infineon Technologies INFNS16504-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 45V 0.5A SOT23-3
товар відсутній
BC817K-25WH6327 BC817K-25WH6327 Infineon Technologies INFNS16504-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR GEN PURPOSE TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
на замовлення 23600 шт:
термін постачання 21-31 дні (днів)
5735+3.51 грн
Мінімальне замовлення: 5735
BC817K-25WH6433 BC817K-25WH6433 Infineon Technologies INFNS16504-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR GEN PURPOSE TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
5735+3.51 грн
Мінімальне замовлення: 5735
SIDC07D60AF6X1SA1 Infineon Technologies SIDC07D60AF6_L4294M.pdf?folderId=db3a304412b407950112b435f0da6425&fileId=db3a304412b407950112b435f1586426 Description: DIODE GP 600V 22.5A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 22.5A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 22.5 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товар відсутній
IRSM515-055DA IRSM515-055DA Infineon Technologies irsm505-055.pdf?fileId=5546d462533600a40153567bf5dc287d Description: IC HALF BRIDGE DRIVER 2.4A 23DIP
Features: Bootstrap Circuit
Packaging: Bulk
Package / Case: 23-DIP Module
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 1.3Ohm
Applications: AC Motors
Current - Output / Channel: 2.4A
Current - Peak Output: 15A
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 23-DIP
Fault Protection: UVLO
Load Type: Inductive
Part Status: Discontinued at Digi-Key
на замовлення 5520 шт:
термін постачання 21-31 дні (днів)
56+379.7 грн
Мінімальне замовлення: 56
IPP045N10N3G Infineon Technologies Description: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 137A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V
товар відсутній
IFX1117MEV33 IFX1117MEV33 Infineon Technologies INFNS16936-1.pdf?t.download=true&u=5oefqw Description: IFX1117 - LINEAR VOLTAGE REGULAT
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 1.4V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
на замовлення 29922 шт:
термін постачання 21-31 дні (днів)
1041+22.13 грн
Мінімальне замовлення: 1041
IFX1117MEV IFX1117MEV Infineon Technologies INFNS16936-1.pdf?t.download=true&u=5oefqw Description: IFX1117 - LINEAR VOLTAGE REGULAT
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4
Voltage - Output (Max): 13.6V
Voltage - Output (Min/Fixed): 1.25V
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.4V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
на замовлення 39213 шт:
термін постачання 21-31 дні (днів)
961+22.39 грн
Мінімальне замовлення: 961
IFX1117MEV33HTMA1 IFX1117MEV33HTMA1 Infineon Technologies IFX1117_Rev1.0_2-24-11.pdf Description: IC REG LINEAR 3.3V 1A SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4-21
Voltage - Output (Min/Fixed): 3.3V
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 1.4V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
на замовлення 3059 шт:
термін постачання 21-31 дні (днів)
961+21.84 грн
Мінімальне замовлення: 961
IPT60R075CFD7XTMA1 IPT60R075CFD7XTMA1 Infineon Technologies Infineon-IPT60R075CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46271bf4f920171df2a0edb30e3 Description: MOSFET N-CH 600V 33A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 11.4A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 570µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 400 V
товар відсутній
IPD35N10S3L-26 IPD35N10S3L-26 Infineon Technologies INFNS16590-1.pdf?t.download=true&u=5oefqw Description: IPD35N10 - 75V-100V N-CHANNEL AU
товар відсутній
IPD60R1K0CEAUMA1 IPD60R1K0CEAUMA1 Infineon Technologies Infineon-IPD60R1K0CE-DS-v02_02-EN.pdf?fileId=5546d46249be182c0149c7bf4c481e94 Description: MOSFET N-CH 600V 6.8A 61W TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-TO252-3-344
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
на замовлення 10017 шт:
термін постачання 21-31 дні (днів)
6+54.18 грн
10+ 45.19 грн
100+ 31.28 грн
500+ 24.53 грн
1000+ 20.88 грн
Мінімальне замовлення: 6
TLE4269GL TLE4269GL Infineon Technologies Infineon-TLE4269-DS-v02_50-EN.pdf?fileId=5546d46259d9a4bf0159f96807553e57 Description: IC REG LIN FIXED POS LDO REG 5V
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 300 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-20
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Part Status: Active
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Antisaturation, Over Current, Over Temperature, Reverse Polarity, Short Circuit
товар відсутній
DDB6U205N16LHOSA1 DDB6U205N16LHOSA1 Infineon Technologies Infineon-DDB6U205N16L-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b4314e925403 Description: DIODE MODULE GP 1600V
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Standard
Diode Configuration: 3 Independent
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.47 V @ 200 A
Current - Reverse Leakage @ Vr: 10 mA @ 1600 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+14460.44 грн
BTC50010-1TAA Infineon Technologies INFN-S-A0001300279-1.pdf?t.download=true&u=5oefqw Description: BUFFER/INVERTER PERIPHL DRIVER
Features: Load Discharge
Packaging: Bulk
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 900µOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 30A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO-263-7-8
Fault Protection: Over Voltage
Part Status: Active
на замовлення 1866 шт:
термін постачання 21-31 дні (днів)
74+311.32 грн
Мінімальне замовлення: 74
BGSA20VGL8E6327XTSA1 BGSA20VGL8E6327XTSA1 Infineon Technologies Infineon-BGSA20VGL8-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f9201722cfc21123da1 Description: IC RF SWITCH SPST 6GHZ TSNP8-1
Packaging: Tape & Reel (TR)
Package / Case: 8-XFQFN
Mounting Type: Surface Mount
Circuit: SPST
RF Type: CDMA, EDGE, LTE, W-CDMA
Voltage - Supply: 1.65V ~ 3.6V
Frequency Range: 6GHz
Supplier Device Package: PG-TSNP-8-1
товар відсутній
BGSA20UGL8E6327XTSA1 BGSA20UGL8E6327XTSA1 Infineon Technologies Infineon-BGSA20UGL8-DataSheet-v02_01-EN.pdf?fileId=5546d46271bf4f9201722cfc2b923da4 Description: IC RF ANT DEVICE 10TSLP
Packaging: Tape & Reel (TR)
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
15000+15.06 грн
Мінімальне замовлення: 15000
BGSA20UGL8E6327XTSA1 BGSA20UGL8E6327XTSA1 Infineon Technologies Infineon-BGSA20UGL8-DataSheet-v02_01-EN.pdf?fileId=5546d46271bf4f9201722cfc2b923da4 Description: IC RF ANT DEVICE 10TSLP
Packaging: Cut Tape (CT)
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
8+43.49 грн
10+ 36.81 грн
25+ 34.56 грн
100+ 26.49 грн
250+ 24.6 грн
500+ 20.94 грн
1000+ 16.47 грн
2500+ 14.93 грн
5000+ 13.9 грн
Мінімальне замовлення: 8
BGSA20GN10E6327XTSA1 BGSA20GN10E6327XTSA1 Infineon Technologies Infineon-RF Front End Solutions for Mobile Applications-BC-v01_00-EN.pdf?fileId=5546d46254e133b401552f350ee3697c Description: IC RF ANT DEVICE 10TSNP
товар відсутній
IRS2113MTRPBF IRS2113MTRPBF Infineon Technologies irs2113mpbf.pdf?fileId=5546d462533600a40153567676a227b7 Description: IC GATE DRVR HALF-BRIDGE 16MLPQ
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad, 14 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-MLPQ (4x4)
Rise / Fall Time (Typ): 25ns, 17ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
товар відсутній
IPI80N06S207AKSA1 IPI80N06S207AKSA1 Infineon Technologies Infineon-IPP_B_I80N06S2_07-DS-v01_00-en.pdf?folderId=db3a304412b407950112b426db703ad9&fileId=db3a304412b407950112b43339a25ab4&ack=t Description: MOSFET N-CH 55V 80A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 68A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 180µA
Supplier Device Package: PG-TO262-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
365+58.35 грн
Мінімальне замовлення: 365
IPI80N06S4L07AKSA2 IPI80N06S4L07AKSA2 Infineon Technologies Infineon-IPP_B_I80N06S4L_07-DS-v01_00-en%5B1%5D.pdf?fileId=db3a304320d39d590121aa3ae68d1c80 Description: MOSFET N-CH 60V 80A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 80A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 40µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5680 pF @ 25 V
на замовлення 9057 шт:
термін постачання 21-31 дні (днів)
347+61.9 грн
Мінімальне замовлення: 347
IPB80N06S2L-11 IPB80N06S2L-11 Infineon Technologies INFNS17038-1.pdf?t.download=true&u=5oefqw Description: IPB80N06 - 55V-60V N-CHANNEL AUT
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 40A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 2V @ 93µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2075 pF @ 25 V
товар відсутній
IPI80N06S207AKSA2 IPI80N06S207AKSA2 Infineon Technologies Infineon-IPP_B_I80N06S2_07-DS-v01_00-en.pdf?fileId=db3a304412b407950112b43339a25ab4&ack=t Description: MOSFET N-CH 55V 80A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 68A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 180µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
173+123.81 грн
Мінімальне замовлення: 173
IKW75N65SS5XKSA1 IKW75N65SS5XKSA1 Infineon Technologies Infineon-IKW75N65SS5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc2833db31af Description: IGBT TRENCH FS 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 75A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/145ns
Switching Energy: 450µJ (on), 750µJ (off)
Test Condition: 400V, 75A, 5.6Ohm, 15V
Gate Charge: 164 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
товар відсутній
IKW75N65RH5XKSA1 IKW75N65RH5XKSA1 Infineon Technologies Infineon-IKW75N65RH5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc281ce931ac Description: IGBT TRENCH FS 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/180ns
Switching Energy: 360µJ (on), 300µJ (off)
Test Condition: 400V, 37.5A, 9Ohm, 15V
Gate Charge: 168 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
на замовлення 254 шт:
термін постачання 21-31 дні (днів)
1+625.7 грн
30+ 481.01 грн
120+ 430.39 грн
IDK12G65C5XTMA1 IDK12G65C5XTMA1 Infineon Technologies INFNS29239-1.pdf?t.download=true&u=5oefqw Description: RECTIFIER DIODE
на замовлення 1437 шт:
термін постачання 21-31 дні (днів)
103+224.91 грн
Мінімальне замовлення: 103
CYW170-01SXC CYW170-01SXC Infineon Technologies Description: IC CLK ZDB 133MHZ 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Clock
Input: Clock
Supplier Device Package: 8-SOIC
Part Status: Obsolete
на замовлення 6567 шт:
термін постачання 21-31 дні (днів)
189+121.32 грн
Мінімальне замовлення: 189
IPP60R180C7 Infineon Technologies Infineon-IPP60R180C7-DS-v02_00-EN.pdf?fileId=5546d4624cb7f111014d483fe4ba707b Description: 13A, 600V, 0.18OHM, N-CHANNEL MO
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.3A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 260µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
товар відсутній
BCR35PNH6433 BCR35PNH6433 Infineon Technologies INFNS19243-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Frequency - Transition: 150MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: PG-SOT363-6-1
Part Status: Active
товар відсутній
BCR 35PN H6327 Infineon Technologies INFNS19243-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Frequency - Transition: 150MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: PG-SOT363-6
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
4116+5.34 грн
Мінімальне замовлення: 4116
BCR39PN-E6327 BCR39PN-E6327 Infineon Technologies INFNS19243-1.pdf?t.download=true&u=5oefqw Description: TRANS PREBIAS NPN/PNP
Packaging: Bulk
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
2077+9.86 грн
Мінімальне замовлення: 2077
DF200R12PT4B6BOSA1 DF200R12PT4B6BOSA1 Infineon Technologies Infineon-DF200R12PT4_B6-DS-v03_00-en_de.pdf?fileId=db3a30433a047ba0013a6e34322f5f8d Description: IGBT MOD 1200V 300A 1100W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1100 W
Current - Collector Cutoff (Max): 15 µA
Input Capacitance (Cies) @ Vce: 12.5 nF @ 25 V
на замовлення 90 шт:
термін постачання 21-31 дні (днів)
FD200R12PT4B6BOSA1 FD200R12PT4B6BOSA1 Infineon Technologies Infineon-FD200R12PT4_B6-DS-v03_00-en_de.pdf?fileId=db3a30433a047ba0013a6e3a8c455fa0 Description: IGBT MOD 1200V 300A 1100W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1100 W
Current - Collector Cutoff (Max): 15 µA
Input Capacitance (Cies) @ Vce: 12.5 nF @ 25 V
на замовлення 86 шт:
термін постачання 21-31 дні (днів)
FS200R12PT4PBOSA1 FS200R12PT4PBOSA1 Infineon Technologies Infineon-FS200R12PT4P-DS-v02_00-EN.pdf?fileId=5546d46253f6505701542e3844cf3eda Description: IGBT MOD 1200V 200A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
2+21974.13 грн
Мінімальне замовлення: 2
FS200R07PE4BOSA1 FS200R07PE4BOSA1 Infineon Technologies Infineon-FS200R07PE4-DS-v02_01-en_de.pdf?fileId=db3a304333227b5e01335963ee7908dd Description: IGBT MOD 650V 200A 600W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 12 nF @ 25 V
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
1+13974.38 грн
12+ 12603.67 грн
FF200R12KT3EHOSA1 FF200R12KT3EHOSA1 Infineon Technologies Infineon-FF200R12KT3_E-DS-v02_00-en_de.pdf?fileId=db3a30431441fb5d0114d51250e31b88 Description: IGBT MODULE 1200V 1050W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1050 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
на замовлення 41 шт:
термін постачання 21-31 дні (днів)
3+10589.52 грн
Мінімальне замовлення: 3
F3L200R07PE4BOSA1 F3L200R07PE4BOSA1 Infineon Technologies Infineon-F3L200R07PE4-DS-v02_00-en_de.pdf?fileId=db3a30432f0d175c012f1060f84238f4 Description: IGBT MOD 650V 200A 680W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 680 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 12.5 nF @ 25 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+15363.12 грн
DF200R12PT4B6BOSA1 DF200R12PT4B6BOSA1 Infineon Technologies Infineon-DF200R12PT4_B6-DS-v03_00-en_de.pdf?fileId=db3a30433a047ba0013a6e34322f5f8d Description: IGBT MOD 1200V 300A 1100W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1100 W
Current - Collector Cutoff (Max): 15 µA
Input Capacitance (Cies) @ Vce: 12.5 nF @ 25 V
товар відсутній
FS200R12KT4RB11BOSA1 FS200R12KT4RB11BOSA1 Infineon Technologies Infineon-FS200R12KT4R_B11-DS-v02_01-en_de.pdf?fileId=db3a30432a14dd54012a3336af6002b6 Description: IGBT MOD 1200V 280A 1000W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 280 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1000 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
на замовлення 11 шт:
термін постачання 21-31 дні (днів)
1+18968.5 грн
10+ 17107.94 грн
FS200R12PT4PBOSA1 FS200R12PT4PBOSA1 Infineon Technologies Infineon-FS200R12PT4P-DS-v02_00-EN.pdf?fileId=5546d46253f6505701542e3844cf3eda Description: IGBT MOD 1200V 200A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
товар відсутній
BAS7006WH6327XTSA1 BAS7006WH6327XTSA1 Infineon Technologies INFNS30154-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOTT 70V 70MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
12+25.94 грн
16+ 19.25 грн
100+ 11.54 грн
Мінімальне замовлення: 12
SPU02N60S5XK SPU02N60S5XK Infineon Technologies Infineon-SPD_U02N60S5-DS-v02_05-en.pdf?fileId=db3a304412b407950112b42c91374727 Description: SPU02N60 - 600V COOLMOS N-CHANNE
Packaging: Bulk
Part Status: Active
на замовлення 1493 шт:
термін постачання 21-31 дні (днів)
434+48 грн
Мінімальне замовлення: 434
SPU02N60S5 Infineon Technologies Infineon-SPD_U02N60S5-DS-v02_05-en.pdf?fileId=db3a304412b407950112b42c91374727 Description: SPU02N60 - 600V COOLMOS N-CHANNE
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 80µA
Supplier Device Package: PG-TO251-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
товар відсутній
BAS140WE6327 BAS140WE6327 Infineon Technologies INFNS11688-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTT 40V 120MA SOD323-2
товар відсутній
BAS7006E6433HTMA1 BAS7006E6433HTMA1 Infineon Technologies INFNS30154-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOTT 70V 70MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
товар відсутній
BAS7006E6433HTMA1 BAS7006E6433HTMA1 Infineon Technologies INFNS30154-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOTT 70V 70MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
12+25.94 грн
16+ 19.25 грн
100+ 11.54 грн
Мінімальне замовлення: 12
BAS70-06E6327 BAS70-06E6327 Infineon Technologies INFNS11040-1.pdf?t.download=true&u=5oefqw Description: BAS70 - HIGH SPEED SWITCHING, CL
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
товар відсутній
BAS70-06E6433 BAS70-06E6433 Infineon Technologies INFNS11040-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOTT 70V 70MA SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
3328+6.26 грн
Мінімальне замовлення: 3328
IR3898MTRPBF ir3898m.pdf?fileId=5546d462533600a4015355d5ebb01815
IR3898MTRPBF
Виробник: Infineon Technologies
Description: IC REG BUCK ADJUSTABLE 6A 16PQFN
товар відсутній
IR3898MTRPBF ir3898m.pdf?fileId=5546d462533600a4015355d5ebb01815
IR3898MTRPBF
Виробник: Infineon Technologies
Description: IC REG BUCK ADJUSTABLE 6A 16PQFN
на замовлення 3996 шт:
термін постачання 21-31 дні (днів)
IR3899MTRPBF ir3899m.pdf?fileId=5546d462533600a4015355d5f3f71817
IR3899MTRPBF
Виробник: Infineon Technologies
Description: IC REG BUCK ADJUSTABLE 9A 16PQFN
товар відсутній
IR3899MTRPBF ir3899m.pdf?fileId=5546d462533600a4015355d5f3f71817
IR3899MTRPBF
Виробник: Infineon Technologies
Description: IC REG BUCK ADJUSTABLE 9A 16PQFN
товар відсутній
IR3894MTRPBF ir3894m.pdf?fileId=5546d462533600a4015355d5d4d6180f
IR3894MTRPBF
Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 12A 16PQFN
товар відсутній
IR3894MTRPBF ir3894m.pdf?fileId=5546d462533600a4015355d5d4d6180f
IR3894MTRPBF
Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 12A 16PQFN
товар відсутній
CY7C1480V33-200AXC Infineon-CY7C1480BV33_CY7C1482BV33_72_MBIT_(2M_X_36_4M_X_18)_PIPELINED_SYNC_SRAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec45b3739ca
CY7C1480V33-200AXC
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
на замовлення 45 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+10482.69 грн
Мінімальне замовлення: 3
BC817K-25WE6327 INFNS16504-1.pdf?t.download=true&u=5oefqw
BC817K-25WE6327
Виробник: Infineon Technologies
Description: BIPOLAR GEN PURPOSE TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT323-3-1
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
товар відсутній
BC817K-16WH6327 INFNS16504-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: BIPOLAR GEN PURPOSE TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT323-3-1
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
товар відсутній
BC817K-16E6327 INFNS16504-1.pdf?t.download=true&u=5oefqw
BC817K-16E6327
Виробник: Infineon Technologies
Description: BIPOLAR GEN PURPOSE TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
7572+2.78 грн
Мінімальне замовлення: 7572
BC817K-25E6327 INFNS16504-1.pdf?t.download=true&u=5oefqw
BC817K-25E6327
Виробник: Infineon Technologies
Description: BIPOLAR GEN PURPOSE TRANSISTOR
товар відсутній
BC817K-16 INFNS16504-1.pdf?t.download=true&u=5oefqw
BC817K-16
Виробник: Infineon Technologies
Description: TRANS NPN 45V 0.5A SOT23-3
товар відсутній
BC817K-25WH6327 INFNS16504-1.pdf?t.download=true&u=5oefqw
BC817K-25WH6327
Виробник: Infineon Technologies
Description: BIPOLAR GEN PURPOSE TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
на замовлення 23600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5735+3.51 грн
Мінімальне замовлення: 5735
BC817K-25WH6433 INFNS16504-1.pdf?t.download=true&u=5oefqw
BC817K-25WH6433
Виробник: Infineon Technologies
Description: BIPOLAR GEN PURPOSE TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5735+3.51 грн
Мінімальне замовлення: 5735
SIDC07D60AF6X1SA1 SIDC07D60AF6_L4294M.pdf?folderId=db3a304412b407950112b435f0da6425&fileId=db3a304412b407950112b435f1586426
Виробник: Infineon Technologies
Description: DIODE GP 600V 22.5A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 22.5A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 22.5 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товар відсутній
IRSM515-055DA irsm505-055.pdf?fileId=5546d462533600a40153567bf5dc287d
IRSM515-055DA
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 2.4A 23DIP
Features: Bootstrap Circuit
Packaging: Bulk
Package / Case: 23-DIP Module
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 1.3Ohm
Applications: AC Motors
Current - Output / Channel: 2.4A
Current - Peak Output: 15A
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 23-DIP
Fault Protection: UVLO
Load Type: Inductive
Part Status: Discontinued at Digi-Key
на замовлення 5520 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
56+379.7 грн
Мінімальне замовлення: 56
IPP045N10N3G
Виробник: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 137A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V
товар відсутній
IFX1117MEV33 INFNS16936-1.pdf?t.download=true&u=5oefqw
IFX1117MEV33
Виробник: Infineon Technologies
Description: IFX1117 - LINEAR VOLTAGE REGULAT
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 1.4V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
на замовлення 29922 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1041+22.13 грн
Мінімальне замовлення: 1041
IFX1117MEV INFNS16936-1.pdf?t.download=true&u=5oefqw
IFX1117MEV
Виробник: Infineon Technologies
Description: IFX1117 - LINEAR VOLTAGE REGULAT
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4
Voltage - Output (Max): 13.6V
Voltage - Output (Min/Fixed): 1.25V
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.4V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
на замовлення 39213 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
961+22.39 грн
Мінімальне замовлення: 961
IFX1117MEV33HTMA1 IFX1117_Rev1.0_2-24-11.pdf
IFX1117MEV33HTMA1
Виробник: Infineon Technologies
Description: IC REG LINEAR 3.3V 1A SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4-21
Voltage - Output (Min/Fixed): 3.3V
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 1.4V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
на замовлення 3059 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
961+21.84 грн
Мінімальне замовлення: 961
IPT60R075CFD7XTMA1 Infineon-IPT60R075CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46271bf4f920171df2a0edb30e3
IPT60R075CFD7XTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 33A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 11.4A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 570µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 400 V
товар відсутній
IPD35N10S3L-26 INFNS16590-1.pdf?t.download=true&u=5oefqw
IPD35N10S3L-26
Виробник: Infineon Technologies
Description: IPD35N10 - 75V-100V N-CHANNEL AU
товар відсутній
IPD60R1K0CEAUMA1 Infineon-IPD60R1K0CE-DS-v02_02-EN.pdf?fileId=5546d46249be182c0149c7bf4c481e94
IPD60R1K0CEAUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 6.8A 61W TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-TO252-3-344
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
на замовлення 10017 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6+54.18 грн
10+ 45.19 грн
100+ 31.28 грн
500+ 24.53 грн
1000+ 20.88 грн
Мінімальне замовлення: 6
TLE4269GL Infineon-TLE4269-DS-v02_50-EN.pdf?fileId=5546d46259d9a4bf0159f96807553e57
TLE4269GL
Виробник: Infineon Technologies
Description: IC REG LIN FIXED POS LDO REG 5V
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 300 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-20
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Part Status: Active
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Antisaturation, Over Current, Over Temperature, Reverse Polarity, Short Circuit
товар відсутній
DDB6U205N16LHOSA1 Infineon-DDB6U205N16L-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b4314e925403
DDB6U205N16LHOSA1
Виробник: Infineon Technologies
Description: DIODE MODULE GP 1600V
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Standard
Diode Configuration: 3 Independent
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.47 V @ 200 A
Current - Reverse Leakage @ Vr: 10 mA @ 1600 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+14460.44 грн
BTC50010-1TAA INFN-S-A0001300279-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: BUFFER/INVERTER PERIPHL DRIVER
Features: Load Discharge
Packaging: Bulk
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 900µOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 30A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO-263-7-8
Fault Protection: Over Voltage
Part Status: Active
на замовлення 1866 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
74+311.32 грн
Мінімальне замовлення: 74
BGSA20VGL8E6327XTSA1 Infineon-BGSA20VGL8-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f9201722cfc21123da1
BGSA20VGL8E6327XTSA1
Виробник: Infineon Technologies
Description: IC RF SWITCH SPST 6GHZ TSNP8-1
Packaging: Tape & Reel (TR)
Package / Case: 8-XFQFN
Mounting Type: Surface Mount
Circuit: SPST
RF Type: CDMA, EDGE, LTE, W-CDMA
Voltage - Supply: 1.65V ~ 3.6V
Frequency Range: 6GHz
Supplier Device Package: PG-TSNP-8-1
товар відсутній
BGSA20UGL8E6327XTSA1 Infineon-BGSA20UGL8-DataSheet-v02_01-EN.pdf?fileId=5546d46271bf4f9201722cfc2b923da4
BGSA20UGL8E6327XTSA1
Виробник: Infineon Technologies
Description: IC RF ANT DEVICE 10TSLP
Packaging: Tape & Reel (TR)
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
15000+15.06 грн
Мінімальне замовлення: 15000
BGSA20UGL8E6327XTSA1 Infineon-BGSA20UGL8-DataSheet-v02_01-EN.pdf?fileId=5546d46271bf4f9201722cfc2b923da4
BGSA20UGL8E6327XTSA1
Виробник: Infineon Technologies
Description: IC RF ANT DEVICE 10TSLP
Packaging: Cut Tape (CT)
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8+43.49 грн
10+ 36.81 грн
25+ 34.56 грн
100+ 26.49 грн
250+ 24.6 грн
500+ 20.94 грн
1000+ 16.47 грн
2500+ 14.93 грн
5000+ 13.9 грн
Мінімальне замовлення: 8
BGSA20GN10E6327XTSA1 Infineon-RF Front End Solutions for Mobile Applications-BC-v01_00-EN.pdf?fileId=5546d46254e133b401552f350ee3697c
BGSA20GN10E6327XTSA1
Виробник: Infineon Technologies
Description: IC RF ANT DEVICE 10TSNP
товар відсутній
IRS2113MTRPBF irs2113mpbf.pdf?fileId=5546d462533600a40153567676a227b7
IRS2113MTRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16MLPQ
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad, 14 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-MLPQ (4x4)
Rise / Fall Time (Typ): 25ns, 17ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
товар відсутній
IPI80N06S207AKSA1 Infineon-IPP_B_I80N06S2_07-DS-v01_00-en.pdf?folderId=db3a304412b407950112b426db703ad9&fileId=db3a304412b407950112b43339a25ab4&ack=t
IPI80N06S207AKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 68A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 180µA
Supplier Device Package: PG-TO262-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
365+58.35 грн
Мінімальне замовлення: 365
IPI80N06S4L07AKSA2 Infineon-IPP_B_I80N06S4L_07-DS-v01_00-en%5B1%5D.pdf?fileId=db3a304320d39d590121aa3ae68d1c80
IPI80N06S4L07AKSA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 80A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 80A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 40µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5680 pF @ 25 V
на замовлення 9057 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
347+61.9 грн
Мінімальне замовлення: 347
IPB80N06S2L-11 INFNS17038-1.pdf?t.download=true&u=5oefqw
IPB80N06S2L-11
Виробник: Infineon Technologies
Description: IPB80N06 - 55V-60V N-CHANNEL AUT
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 40A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 2V @ 93µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2075 pF @ 25 V
товар відсутній
IPI80N06S207AKSA2 Infineon-IPP_B_I80N06S2_07-DS-v01_00-en.pdf?fileId=db3a304412b407950112b43339a25ab4&ack=t
IPI80N06S207AKSA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 68A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 180µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
173+123.81 грн
Мінімальне замовлення: 173
IKW75N65SS5XKSA1 Infineon-IKW75N65SS5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc2833db31af
IKW75N65SS5XKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 75A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/145ns
Switching Energy: 450µJ (on), 750µJ (off)
Test Condition: 400V, 75A, 5.6Ohm, 15V
Gate Charge: 164 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
товар відсутній
IKW75N65RH5XKSA1 Infineon-IKW75N65RH5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc281ce931ac
IKW75N65RH5XKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/180ns
Switching Energy: 360µJ (on), 300µJ (off)
Test Condition: 400V, 37.5A, 9Ohm, 15V
Gate Charge: 168 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
на замовлення 254 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+625.7 грн
30+ 481.01 грн
120+ 430.39 грн
IDK12G65C5XTMA1 INFNS29239-1.pdf?t.download=true&u=5oefqw
IDK12G65C5XTMA1
Виробник: Infineon Technologies
Description: RECTIFIER DIODE
на замовлення 1437 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
103+224.91 грн
Мінімальне замовлення: 103
CYW170-01SXC
CYW170-01SXC
Виробник: Infineon Technologies
Description: IC CLK ZDB 133MHZ 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Clock
Input: Clock
Supplier Device Package: 8-SOIC
Part Status: Obsolete
на замовлення 6567 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
189+121.32 грн
Мінімальне замовлення: 189
IPP60R180C7 Infineon-IPP60R180C7-DS-v02_00-EN.pdf?fileId=5546d4624cb7f111014d483fe4ba707b
Виробник: Infineon Technologies
Description: 13A, 600V, 0.18OHM, N-CHANNEL MO
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.3A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 260µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
товар відсутній
BCR35PNH6433 INFNS19243-1.pdf?t.download=true&u=5oefqw
BCR35PNH6433
Виробник: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Frequency - Transition: 150MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: PG-SOT363-6-1
Part Status: Active
товар відсутній
BCR 35PN H6327 INFNS19243-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Frequency - Transition: 150MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: PG-SOT363-6
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4116+5.34 грн
Мінімальне замовлення: 4116
BCR39PN-E6327 INFNS19243-1.pdf?t.download=true&u=5oefqw
BCR39PN-E6327
Виробник: Infineon Technologies
Description: TRANS PREBIAS NPN/PNP
Packaging: Bulk
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2077+9.86 грн
Мінімальне замовлення: 2077
DF200R12PT4B6BOSA1 Infineon-DF200R12PT4_B6-DS-v03_00-en_de.pdf?fileId=db3a30433a047ba0013a6e34322f5f8d
DF200R12PT4B6BOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 300A 1100W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1100 W
Current - Collector Cutoff (Max): 15 µA
Input Capacitance (Cies) @ Vce: 12.5 nF @ 25 V
на замовлення 90 шт:
термін постачання 21-31 дні (днів)
FD200R12PT4B6BOSA1 Infineon-FD200R12PT4_B6-DS-v03_00-en_de.pdf?fileId=db3a30433a047ba0013a6e3a8c455fa0
FD200R12PT4B6BOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 300A 1100W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1100 W
Current - Collector Cutoff (Max): 15 µA
Input Capacitance (Cies) @ Vce: 12.5 nF @ 25 V
на замовлення 86 шт:
термін постачання 21-31 дні (днів)
FS200R12PT4PBOSA1 Infineon-FS200R12PT4P-DS-v02_00-EN.pdf?fileId=5546d46253f6505701542e3844cf3eda
FS200R12PT4PBOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 200A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+21974.13 грн
Мінімальне замовлення: 2
FS200R07PE4BOSA1 Infineon-FS200R07PE4-DS-v02_01-en_de.pdf?fileId=db3a304333227b5e01335963ee7908dd
FS200R07PE4BOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 650V 200A 600W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 12 nF @ 25 V
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+13974.38 грн
12+ 12603.67 грн
FF200R12KT3EHOSA1 Infineon-FF200R12KT3_E-DS-v02_00-en_de.pdf?fileId=db3a30431441fb5d0114d51250e31b88
FF200R12KT3EHOSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 1200V 1050W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1050 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
на замовлення 41 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+10589.52 грн
Мінімальне замовлення: 3
F3L200R07PE4BOSA1 Infineon-F3L200R07PE4-DS-v02_00-en_de.pdf?fileId=db3a30432f0d175c012f1060f84238f4
F3L200R07PE4BOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 650V 200A 680W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 680 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 12.5 nF @ 25 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+15363.12 грн
DF200R12PT4B6BOSA1 Infineon-DF200R12PT4_B6-DS-v03_00-en_de.pdf?fileId=db3a30433a047ba0013a6e34322f5f8d
DF200R12PT4B6BOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 300A 1100W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1100 W
Current - Collector Cutoff (Max): 15 µA
Input Capacitance (Cies) @ Vce: 12.5 nF @ 25 V
товар відсутній
FS200R12KT4RB11BOSA1 Infineon-FS200R12KT4R_B11-DS-v02_01-en_de.pdf?fileId=db3a30432a14dd54012a3336af6002b6
FS200R12KT4RB11BOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 280A 1000W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 280 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1000 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
на замовлення 11 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+18968.5 грн
10+ 17107.94 грн
FS200R12PT4PBOSA1 Infineon-FS200R12PT4P-DS-v02_00-EN.pdf?fileId=5546d46253f6505701542e3844cf3eda
FS200R12PT4PBOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 200A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
товар відсутній
BAS7006WH6327XTSA1 INFNS30154-1.pdf?t.download=true&u=5oefqw
BAS7006WH6327XTSA1
Виробник: Infineon Technologies
Description: DIODE ARR SCHOTT 70V 70MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
12+25.94 грн
16+ 19.25 грн
100+ 11.54 грн
Мінімальне замовлення: 12
SPU02N60S5XK Infineon-SPD_U02N60S5-DS-v02_05-en.pdf?fileId=db3a304412b407950112b42c91374727
SPU02N60S5XK
Виробник: Infineon Technologies
Description: SPU02N60 - 600V COOLMOS N-CHANNE
Packaging: Bulk
Part Status: Active
на замовлення 1493 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
434+48 грн
Мінімальне замовлення: 434
SPU02N60S5 Infineon-SPD_U02N60S5-DS-v02_05-en.pdf?fileId=db3a304412b407950112b42c91374727
Виробник: Infineon Technologies
Description: SPU02N60 - 600V COOLMOS N-CHANNE
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 80µA
Supplier Device Package: PG-TO251-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
товар відсутній
BAS140WE6327 INFNS11688-1.pdf?t.download=true&u=5oefqw
BAS140WE6327
Виробник: Infineon Technologies
Description: DIODE SCHOTT 40V 120MA SOD323-2
товар відсутній
BAS7006E6433HTMA1 INFNS30154-1.pdf?t.download=true&u=5oefqw
BAS7006E6433HTMA1
Виробник: Infineon Technologies
Description: DIODE ARR SCHOTT 70V 70MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
товар відсутній
BAS7006E6433HTMA1 INFNS30154-1.pdf?t.download=true&u=5oefqw
BAS7006E6433HTMA1
Виробник: Infineon Technologies
Description: DIODE ARR SCHOTT 70V 70MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
12+25.94 грн
16+ 19.25 грн
100+ 11.54 грн
Мінімальне замовлення: 12
BAS70-06E6327 INFNS11040-1.pdf?t.download=true&u=5oefqw
BAS70-06E6327
Виробник: Infineon Technologies
Description: BAS70 - HIGH SPEED SWITCHING, CL
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
товар відсутній
BAS70-06E6433 INFNS11040-1.pdf?t.download=true&u=5oefqw
BAS70-06E6433
Виробник: Infineon Technologies
Description: DIODE ARR SCHOTT 70V 70MA SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3328+6.26 грн
Мінімальне замовлення: 3328
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