Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (136444) > Сторінка 394 з 2275

Обрати Сторінку:   [  << Попередня Сторінка ]  1 227 389 390 391 392 393 394 395 396 397 398 399 454 681 908 1135 1362 1589 1816 2043 2270 2275  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
без ПДВ
EVALM5IMZ120RSICTOBO1 EVALM5IMZ120RSICTOBO1 Infineon Technologies Infineon-Evaluation_board_EVAL-M5-IMZ120R-SiC-ApplicationNotes-v01_00-EN.pdf?fileId=5546d462700c0ae60170a08dcc430f53 Description: DEV KIT
Packaging: Bulk
Function: MOSFET
Type: Interface
Utilized IC / Part: M5IMZ120RSIC
Supplied Contents: Board(s)
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+51153.67 грн
ESD202B1CSP01005XTSA1 ESD202B1CSP01005XTSA1 Infineon Technologies Infineon-ESD202-B1-CSP01005-DS-v01_03-EN.pdf?fileId=5546d4624cb7f111014d435043872914 Description: TVS DIODE 5.5VWM 12VC P/WLL-2-2
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 6.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: P/PG-WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V (Typ)
Power - Peak Pulse: 36W
Power Line Protection: No
Part Status: Active
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
15000+1.12 грн
Мінімальне замовлення: 15000
ESD202B1CSP01005XTSA1 ESD202B1CSP01005XTSA1 Infineon Technologies Infineon-ESD202-B1-CSP01005-DS-v01_03-EN.pdf?fileId=5546d4624cb7f111014d435043872914 Description: TVS DIODE 5.5VWM 12VC P/WLL-2-2
Packaging: Cut Tape (CT)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 6.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: P/PG-WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V (Typ)
Power - Peak Pulse: 36W
Power Line Protection: No
Part Status: Active
на замовлення 33591 шт:
термін постачання 21-31 дні (днів)
40+7.63 грн
54+ 5.51 грн
100+ 2.98 грн
500+ 2.19 грн
1000+ 1.52 грн
2000+ 1.26 грн
5000+ 1.17 грн
Мінімальне замовлення: 40
BSC0703LSATMA1 BSC0703LSATMA1 Infineon Technologies Infineon-BSC0703LS-DataSheet-v02_02-EN.pdf?fileId=5546d462700c0ae6017086e9635e1d29 Description: MOSFET N-CH 60V 15A/64A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 32A, 10V
Power Dissipation (Max): 2.5W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 20µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V
товар відсутній
BSC0703LSATMA1 BSC0703LSATMA1 Infineon Technologies Infineon-BSC0703LS-DataSheet-v02_02-EN.pdf?fileId=5546d462700c0ae6017086e9635e1d29 Description: MOSFET N-CH 60V 15A/64A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 32A, 10V
Power Dissipation (Max): 2.5W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 20µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V
на замовлення 6753 шт:
термін постачання 21-31 дні (днів)
5+72.49 грн
10+ 62.38 грн
100+ 48.64 грн
500+ 37.71 грн
1000+ 29.77 грн
2000+ 27.79 грн
Мінімальне замовлення: 5
IPI052NE7N3G IPI052NE7N3G Infineon Technologies INFN-S-A0001300366-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 91µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 37.5 V
на замовлення 396 шт:
термін постачання 21-31 дні (днів)
396+58.58 грн
Мінімальне замовлення: 396
IPP052NE7N3G IPP052NE7N3G Infineon Technologies INFN-S-A0001300366-1.pdf?t.download=true&u=5oefqw Description: IPP052NE7 - 12V-300V N-CHANNEL P
товар відсутній
TLE42754D Infineon Technologies Infineon-TLE42754-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8e99a01fab Description: IC REG LINEAR VOLT TLE42754
Packaging: Bulk
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 450mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TO252-5
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 25 mA
товар відсутній
TLE4997E2 TLE4997E2 Infineon Technologies Infineon-TLE4997-DS-v02_08-en.pdf?fileId=db3a30431ce5fb52011d3e4c832a2594 Description: PROGRAMMABLE HALL EFFECT SENSOR
товар відсутній
SIGC121T60NR2CX7SA1 Infineon Technologies Description: IGBT 3 CHIP 600V WAFER
товар відсутній
SIGC121T60NR2CX1SA2 Infineon Technologies SIGC121T60NR2C_ed2_11-28-03.pdf Description: IGBT 3 CHIP 600V WAFER
товар відсутній
SIGC121T60NR2CX1SA3 Infineon Technologies SIGC121T60NR2C_ed2_11-28-03.pdf Description: IGBT 3 CHIP 600V WAFER
товар відсутній
BTS114AE3045ANTMA1 BTS114AE3045ANTMA1 Infineon Technologies INFNS05896-1.pdf?t.download=true&u=5oefqw Description: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Supplier Device Package: PG-TO220-3-5
на замовлення 28000 шт:
термін постачання 21-31 дні (днів)
88+243.62 грн
Мінімальне замовлення: 88
IGT60R070D1ATMA1 IGT60R070D1ATMA1 Infineon Technologies Infineon-IGT60R070D1-DS-v02_01-EN.pdf?fileId=5546d46265f064ff016686028dd56526 Description: GANFET N-CH 600V 31A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-HSOF-8-3
Part Status: Obsolete
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
товар відсутній
BC847CWE6778 BC847CWE6778 Infineon Technologies INFNS16507-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR GEN PURPOSE TRANSISTOR
Packaging: Bulk
товар відсутній
CY8C4245AZI-M445 CY8C4245AZI-M445 Infineon Technologies download Description: IC MCU 32BIT 32KB FLASH 64TQFP
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 51
DigiKey Programmable: Not Verified
на замовлення 110 шт:
термін постачання 21-31 дні (днів)
110+227.58 грн
Мінімальне замовлення: 110
IPB03N03LAG IPB03N03LAG Infineon Technologies INFNS08712-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 55A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 7027 pF @ 15 V
на замовлення 703 шт:
термін постачання 21-31 дні (днів)
297+71.86 грн
Мінімальне замовлення: 297
IPB03N03LBG IPB03N03LBG Infineon Technologies INFNS08712-1.pdf?t.download=true&u=5oefqw Description: OPTLMOS N-CHANNEL POWER MOSFET
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
SAB80C166MT3DDBXUMA1 SAB80C166MT3DDBXUMA1 Infineon Technologies INFND00010-603.pdf?t.download=true&u=5oefqw Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: Mask ROM
Core Processor: C166
Data Converters: A/D 10x10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: ASC, UART/USART
Peripherals: WDT
Supplier Device Package: P-MQFP-100-2
Part Status: Active
Number of I/O: 76
товар відсутній
SAB-80C166-M-T3DD Infineon Technologies INFND00010-603.pdf?t.download=true&u=5oefqw Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 10x10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: ASC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-100-2
Part Status: Active
Number of I/O: 76
товар відсутній
BTS611L1E3128A BTS611L1E3128A Infineon Technologies INFN-S-A0000110231-1.pdf?t.download=true&u=5oefqw Description: SMART TWO CHANNEL HIGH-SIDE POWE
Features: Auto Restart, Slew Rate Controlled
Packaging: Bulk
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 160mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.4A
Ratio - Input:Output: 1:1
Supplier Device Package: P-TO263-7-2
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Short Circuit, UVLO
Part Status: Active
товар відсутній
BSC019N04LSATMA1 BSC019N04LSATMA1 Infineon Technologies Infineon-BSC019N04LS-DS-v02_01-EN.pdf?fileId=db3a304342371bb001424b8aca0c6fc4 Description: MOSFET N-CH 40V 27A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 20 V
на замовлення 25843 шт:
термін постачання 21-31 дні (днів)
3+133.53 грн
10+ 107.06 грн
100+ 85.21 грн
500+ 67.66 грн
1000+ 57.41 грн
2000+ 54.54 грн
Мінімальне замовлення: 3
TDA7116FHTMA1 TDA7116FHTMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: RF TX IC ASK 866-870MHZ 10TFSOP
Packaging: Tape & Reel (TR)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Frequency: 866MHz ~ 870MHz
Modulation or Protocol: ASK, FSK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.1V ~ 4V
Power - Output: 13dBm
Current - Transmitting: 14.2mA
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-10-2
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
TDA7116FHTMA1 TDA7116FHTMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: RF TX IC ASK 866-870MHZ 10TFSOP
Packaging: Cut Tape (CT)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Frequency: 866MHz ~ 870MHz
Modulation or Protocol: ASK, FSK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.1V ~ 4V
Power - Output: 13dBm
Current - Transmitting: 14.2mA
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-10-2
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
BCR148WH6327 BCR148WH6327 Infineon Technologies INFNS17184-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 100 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
товар відсутній
BCR 148F E6327 BCR 148F E6327 Infineon Technologies bcr148series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a373011440144ad602b8 Description: TRANS PREBIAS NPN 50V TSFP-3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-TSFP-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 100 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
товар відсутній
BCR 148L3 E6327 BCR 148L3 E6327 Infineon Technologies BCR148_2011.pdf Description: TRANS PREBIAS NPN 50V TSLP-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-TSLP-3-4
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 100 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
товар відсутній
BCR 148T E6327 BCR 148T E6327 Infineon Technologies BCR148_2011.pdf Description: TRANS PREBIAS NPN 50V 0.07A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SC75-3D
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 100 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
товар відсутній
BCR 148S H6827 BCR 148S H6827 Infineon Technologies bcr148series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a373011440144ad602b8 Description: TRANS 2NPN PREBIAS 0.25W SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Frequency - Transition: 100MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: PG-SOT363-PO
Part Status: Obsolete
товар відсутній
IMBF170R1K0M1XTMA1 IMBF170R1K0M1XTMA1 Infineon Technologies Infineon-IMBF170R1K0M1-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b70171820c93e21adc Description: SICFET N-CH 1700V 5.2A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 1000mOhm @ 1A, 15V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.1mA
Supplier Device Package: PG-TO263-7-13
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 1000 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+176.35 грн
Мінімальне замовлення: 1000
IMBF170R1K0M1XTMA1 IMBF170R1K0M1XTMA1 Infineon Technologies Infineon-IMBF170R1K0M1-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b70171820c93e21adc Description: SICFET N-CH 1700V 5.2A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 1000mOhm @ 1A, 15V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.1mA
Supplier Device Package: PG-TO263-7-13
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 1000 V
на замовлення 1540 шт:
термін постачання 21-31 дні (днів)
1+341.08 грн
10+ 275.76 грн
100+ 223.12 грн
500+ 186.13 грн
IMBF170R450M1XTMA1 IMBF170R450M1XTMA1 Infineon Technologies Infineon-IMBF170R450M1-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b70171820c850e1ad9 Description: SICFET N-CH 1700V 9.8A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 2A, 15V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 2.5mA
Supplier Device Package: PG-TO263-7-13
Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 1000 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+246.76 грн
Мінімальне замовлення: 1000
IMBF170R450M1XTMA1 IMBF170R450M1XTMA1 Infineon Technologies Infineon-IMBF170R450M1-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b70171820c850e1ad9 Description: SICFET N-CH 1700V 9.8A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 2A, 15V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 2.5mA
Supplier Device Package: PG-TO263-7-13
Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 1000 V
на замовлення 1263 шт:
термін постачання 21-31 дні (днів)
1+434.93 грн
10+ 359.01 грн
100+ 299.22 грн
500+ 247.77 грн
SAACIC61508OSRF3VAAAXUMA1 SAACIC61508OSRF3VAAAXUMA1 Infineon Technologies Description: IC SUPERVISOR PWR SUP SUPPORT
товар відсутній
BSZ037N06LS5ATMA1 BSZ037N06LS5ATMA1 Infineon Technologies Infineon-BSZ037N06LS5-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a53b0879f52ec Description: MOSFET N-CH 60V 18A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 30 V
на замовлення 9960 шт:
термін постачання 21-31 дні (днів)
3+138.87 грн
10+ 121.09 грн
25+ 108.13 грн
100+ 91.33 грн
250+ 81.19 грн
500+ 71.04 грн
1000+ 60.76 грн
Мінімальне замовлення: 3
IPT020N10N5ATMA1 IPT020N10N5ATMA1 Infineon Technologies Infineon-IPT020N10N5-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016ac02955ee32f4 Description: MOSFET N-CH 100V 31A/260A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 260A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 150A, 10V
Power Dissipation (Max): 273W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 202µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
2000+217.05 грн
Мінімальне замовлення: 2000
IPT020N10N5ATMA1 IPT020N10N5ATMA1 Infineon Technologies Infineon-IPT020N10N5-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016ac02955ee32f4 Description: MOSFET N-CH 100V 31A/260A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 260A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 150A, 10V
Power Dissipation (Max): 273W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 202µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V
на замовлення 8107 шт:
термін постачання 21-31 дні (днів)
1+464.69 грн
10+ 375.77 грн
100+ 303.99 грн
500+ 253.59 грн
1000+ 217.13 грн
IKFW50N65EH5XKSA1 IKFW50N65EH5XKSA1 Infineon Technologies Infineon-IKFW50N65EH5-DataSheet-v02_01-EN.pdf?fileId=5546d4627506bb3201754b1a2aa576ae Description: IGBT TRENCH FS 650V 59A HSIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 52 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-HSIP247-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/138ns
Switching Energy: 1.2mJ (on), 400µJ (off)
Test Condition: 400V, 40A, 15.1Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 59 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 124 W
на замовлення 105 шт:
термін постачання 21-31 дні (днів)
1+426.54 грн
30+ 327.79 грн
FP40R12KT3BPSA1 FP40R12KT3BPSA1 Infineon Technologies Infineon-FP40R12KT3-DS-v02_00-EN.pdf?fileId=db3a304412b407950112b4316d775442 Description: LOW POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2-8
Part Status: Active
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 105 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
на замовлення 17 шт:
термін постачання 21-31 дні (днів)
1+8837.57 грн
IRF7341GTRPBF IRF7341GTRPBF Infineon Technologies irf7341gpbf.pdf?fileId=5546d462533600a4015355f63e9b1b5f Description: MOSFET 2N-CH 55V 5.1A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 5.1A
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
4000+57.81 грн
Мінімальне замовлення: 4000
IRF7341GTRPBF IRF7341GTRPBF Infineon Technologies irf7341gpbf.pdf?fileId=5546d462533600a4015355f63e9b1b5f Description: MOSFET 2N-CH 55V 5.1A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 5.1A
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 7847 шт:
термін постачання 21-31 дні (днів)
3+128.19 грн
10+ 102.58 грн
100+ 81.62 грн
500+ 64.81 грн
1000+ 54.99 грн
2000+ 52.24 грн
Мінімальне замовлення: 3
CY2314ANZSXC-1 CY2314ANZSXC-1 Infineon Technologies cy2314anz_8.pdf Description: IC CLK BUFFER 1:14 100MHZ 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: Clock
Type: Fanout Buffer (Distribution)
Input: Clock
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:14
Differential - Input:Output: No/No
Supplier Device Package: 28-SOIC
Frequency - Max: 100 MHz
на замовлення 1243 шт:
термін постачання 21-31 дні (днів)
62+345.88 грн
Мінімальне замовлення: 62
CY2314ANZSXC-1T CY2314ANZSXC-1T Infineon Technologies cy2314anz_8.pdf Description: IC CLK BUFFER 1:14 100MHZ 28SOIC
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: Clock
Type: Fanout Buffer (Distribution)
Input: Clock
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:14
Differential - Input:Output: No/No
Supplier Device Package: 28-SOIC
Frequency - Max: 100 MHz
на замовлення 5015 шт:
термін постачання 21-31 дні (днів)
61+351.51 грн
Мінімальне замовлення: 61
TD215N22KOFHPSA1 TD215N22KOFHPSA1 Infineon Technologies Infineon-TT215N-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b42fe0c84e1c Description: SCR MODULE 2200V 410A MODULE
товар відсутній
SPA03N60C3XK SPA03N60C3XK Infineon Technologies Infineon-SPP_A03N60C3-DS-v03_00-en.pdf?fileId=db3a304318f3fe29011908f075042a10 Description: SPA03N60 - 600V COOLMOS N-CHANNE
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 29.7W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
товар відсутній
BCX6916H6327XTSA1 BCX6916H6327XTSA1 Infineon Technologies bcx69.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589f3f56603ee&location=.en.product.findProductTypeByName.html_dgdl_bcx69.pdf Description: TRANS PNP 20V 1A SOT89
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
на замовлення 19000 шт:
термін постачання 21-31 дні (днів)
1269+18.31 грн
Мінімальне замовлення: 1269
CY15B016Q-SXET CY15B016Q-SXET Infineon Technologies Infineon-CY15B016Q_16_KBIT_(2K_X_8)_SERIAL_(SPI)_AUTOMOTIVE-E_F-RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee3f9176a99&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FRAM 16KBIT SPI 16MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.65V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 16 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Part Status: Active
Memory Interface: SPI
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)
2500+92.88 грн
Мінімальне замовлення: 2500
IGW50N65F5 IGW50N65F5 Infineon Technologies Part_Number_Guide_Web.pdf Description: IGBT 650V 80A 305W PG-TO247-3
товар відсутній
BSO303PH Infineon Technologies INFNS16523-1.pdf?t.download=true&u=5oefqw Description: 7A, 30V, 0.021OHM, 2-ELEMENT, P
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2678pF @ 25V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: PG-DSO-8
Part Status: Active
товар відсутній
BSO303P BSO303P Infineon Technologies INFNS11906-1.pdf?t.download=true&u=5oefqw Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.2A
Input Capacitance (Ciss) (Max) @ Vds: 1761pF @ 25V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 72.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: PG-DSO-8
Part Status: Active
товар відсутній
AUIRFR024NTRL AUIRFR024NTRL Infineon Technologies AUIRF%28R%2CU%29024N.pdf Description: MOSFET N-CH 55V 17A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
товар відсутній
AUIRFR024NTRL AUIRFR024NTRL Infineon Technologies AUIRF%28R%2CU%29024N.pdf Description: MOSFET N-CH 55V 17A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
товар відсутній
S70KS1281DPBHI020 S70KS1281DPBHI020 Infineon Technologies Infineon-S27KL0641_S27KS0641_S70KL1281_S70KS1281_3.0_V_1.8_V_64_Mb_(8_MB)_128_Mb_(16_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed18c684db5&utm_source=cypress&utm_medium=referral&utm_ca Description: IC PSRAM 128MBIT PARALLEL 24FBGA
товар відсутній
BS0200N03S Infineon Technologies Description: BSO200 - 20V-250V P-CHANNEL POWE
товар відсутній
AIDK12S65C5ATMA1 AIDK12S65C5ATMA1 Infineon Technologies Infineon-AIDK12S65C5-DataSheet-v03_00-EN.pdf?fileId=5546d462700c0ae601701ac3e9892f51 Description: DISCRETE DIODES
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 363pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 70 µA @ 650 V
Qualification: AEC-Q101
товар відсутній
AIDK12S65C5ATMA1 AIDK12S65C5ATMA1 Infineon Technologies Infineon-AIDK12S65C5-DataSheet-v03_00-EN.pdf?fileId=5546d462700c0ae601701ac3e9892f51 Description: DISCRETE DIODES
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 363pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 70 µA @ 650 V
Qualification: AEC-Q101
на замовлення 980 шт:
термін постачання 21-31 дні (днів)
1+404.41 грн
10+ 326.9 грн
100+ 264.48 грн
500+ 220.63 грн
CP8173ATT Infineon Technologies Description: IC MCU CAPSENSE PLUS 56QFN
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
CP8175ATT Infineon Technologies Description: IC MCU CAPSENSE PLUS 56QFN
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
CP8173AT Infineon Technologies Description: IC MCU CAPSENSE PLUS 56QFN
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
CP8175AT Infineon Technologies Description: IC MCU CAPSENSE PLUS 56QFN
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
EVALM5IMZ120RSICTOBO1 Infineon-Evaluation_board_EVAL-M5-IMZ120R-SiC-ApplicationNotes-v01_00-EN.pdf?fileId=5546d462700c0ae60170a08dcc430f53
EVALM5IMZ120RSICTOBO1
Виробник: Infineon Technologies
Description: DEV KIT
Packaging: Bulk
Function: MOSFET
Type: Interface
Utilized IC / Part: M5IMZ120RSIC
Supplied Contents: Board(s)
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+51153.67 грн
ESD202B1CSP01005XTSA1 Infineon-ESD202-B1-CSP01005-DS-v01_03-EN.pdf?fileId=5546d4624cb7f111014d435043872914
ESD202B1CSP01005XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 5.5VWM 12VC P/WLL-2-2
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 6.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: P/PG-WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V (Typ)
Power - Peak Pulse: 36W
Power Line Protection: No
Part Status: Active
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
15000+1.12 грн
Мінімальне замовлення: 15000
ESD202B1CSP01005XTSA1 Infineon-ESD202-B1-CSP01005-DS-v01_03-EN.pdf?fileId=5546d4624cb7f111014d435043872914
ESD202B1CSP01005XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 5.5VWM 12VC P/WLL-2-2
Packaging: Cut Tape (CT)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 6.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: P/PG-WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V (Typ)
Power - Peak Pulse: 36W
Power Line Protection: No
Part Status: Active
на замовлення 33591 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
40+7.63 грн
54+ 5.51 грн
100+ 2.98 грн
500+ 2.19 грн
1000+ 1.52 грн
2000+ 1.26 грн
5000+ 1.17 грн
Мінімальне замовлення: 40
BSC0703LSATMA1 Infineon-BSC0703LS-DataSheet-v02_02-EN.pdf?fileId=5546d462700c0ae6017086e9635e1d29
BSC0703LSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 15A/64A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 32A, 10V
Power Dissipation (Max): 2.5W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 20µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V
товар відсутній
BSC0703LSATMA1 Infineon-BSC0703LS-DataSheet-v02_02-EN.pdf?fileId=5546d462700c0ae6017086e9635e1d29
BSC0703LSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 15A/64A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 32A, 10V
Power Dissipation (Max): 2.5W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 20µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V
на замовлення 6753 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+72.49 грн
10+ 62.38 грн
100+ 48.64 грн
500+ 37.71 грн
1000+ 29.77 грн
2000+ 27.79 грн
Мінімальне замовлення: 5
IPI052NE7N3G INFN-S-A0001300366-1.pdf?t.download=true&u=5oefqw
IPI052NE7N3G
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 91µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 37.5 V
на замовлення 396 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
396+58.58 грн
Мінімальне замовлення: 396
IPP052NE7N3G INFN-S-A0001300366-1.pdf?t.download=true&u=5oefqw
IPP052NE7N3G
Виробник: Infineon Technologies
Description: IPP052NE7 - 12V-300V N-CHANNEL P
товар відсутній
TLE42754D Infineon-TLE42754-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8e99a01fab
Виробник: Infineon Technologies
Description: IC REG LINEAR VOLT TLE42754
Packaging: Bulk
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 450mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TO252-5
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 25 mA
товар відсутній
TLE4997E2 Infineon-TLE4997-DS-v02_08-en.pdf?fileId=db3a30431ce5fb52011d3e4c832a2594
TLE4997E2
Виробник: Infineon Technologies
Description: PROGRAMMABLE HALL EFFECT SENSOR
товар відсутній
SIGC121T60NR2CX7SA1
Виробник: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
товар відсутній
SIGC121T60NR2CX1SA2 SIGC121T60NR2C_ed2_11-28-03.pdf
Виробник: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
товар відсутній
SIGC121T60NR2CX1SA3 SIGC121T60NR2C_ed2_11-28-03.pdf
Виробник: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
товар відсутній
BTS114AE3045ANTMA1 INFNS05896-1.pdf?t.download=true&u=5oefqw
BTS114AE3045ANTMA1
Виробник: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Supplier Device Package: PG-TO220-3-5
на замовлення 28000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
88+243.62 грн
Мінімальне замовлення: 88
IGT60R070D1ATMA1 Infineon-IGT60R070D1-DS-v02_01-EN.pdf?fileId=5546d46265f064ff016686028dd56526
IGT60R070D1ATMA1
Виробник: Infineon Technologies
Description: GANFET N-CH 600V 31A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-HSOF-8-3
Part Status: Obsolete
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
товар відсутній
BC847CWE6778 INFNS16507-1.pdf?t.download=true&u=5oefqw
BC847CWE6778
Виробник: Infineon Technologies
Description: BIPOLAR GEN PURPOSE TRANSISTOR
Packaging: Bulk
товар відсутній
CY8C4245AZI-M445 download
CY8C4245AZI-M445
Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 64TQFP
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 51
DigiKey Programmable: Not Verified
на замовлення 110 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
110+227.58 грн
Мінімальне замовлення: 110
IPB03N03LAG INFNS08712-1.pdf?t.download=true&u=5oefqw
IPB03N03LAG
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 55A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 7027 pF @ 15 V
на замовлення 703 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
297+71.86 грн
Мінімальне замовлення: 297
IPB03N03LBG INFNS08712-1.pdf?t.download=true&u=5oefqw
IPB03N03LBG
Виробник: Infineon Technologies
Description: OPTLMOS N-CHANNEL POWER MOSFET
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
SAB80C166MT3DDBXUMA1 INFND00010-603.pdf?t.download=true&u=5oefqw
SAB80C166MT3DDBXUMA1
Виробник: Infineon Technologies
Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: Mask ROM
Core Processor: C166
Data Converters: A/D 10x10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: ASC, UART/USART
Peripherals: WDT
Supplier Device Package: P-MQFP-100-2
Part Status: Active
Number of I/O: 76
товар відсутній
SAB-80C166-M-T3DD INFND00010-603.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 10x10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: ASC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-100-2
Part Status: Active
Number of I/O: 76
товар відсутній
BTS611L1E3128A INFN-S-A0000110231-1.pdf?t.download=true&u=5oefqw
BTS611L1E3128A
Виробник: Infineon Technologies
Description: SMART TWO CHANNEL HIGH-SIDE POWE
Features: Auto Restart, Slew Rate Controlled
Packaging: Bulk
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 160mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.4A
Ratio - Input:Output: 1:1
Supplier Device Package: P-TO263-7-2
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Short Circuit, UVLO
Part Status: Active
товар відсутній
BSC019N04LSATMA1 Infineon-BSC019N04LS-DS-v02_01-EN.pdf?fileId=db3a304342371bb001424b8aca0c6fc4
BSC019N04LSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 27A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 20 V
на замовлення 25843 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+133.53 грн
10+ 107.06 грн
100+ 85.21 грн
500+ 67.66 грн
1000+ 57.41 грн
2000+ 54.54 грн
Мінімальне замовлення: 3
TDA7116FHTMA1 fundamentals-of-power-semiconductors
TDA7116FHTMA1
Виробник: Infineon Technologies
Description: RF TX IC ASK 866-870MHZ 10TFSOP
Packaging: Tape & Reel (TR)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Frequency: 866MHz ~ 870MHz
Modulation or Protocol: ASK, FSK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.1V ~ 4V
Power - Output: 13dBm
Current - Transmitting: 14.2mA
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-10-2
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
TDA7116FHTMA1 fundamentals-of-power-semiconductors
TDA7116FHTMA1
Виробник: Infineon Technologies
Description: RF TX IC ASK 866-870MHZ 10TFSOP
Packaging: Cut Tape (CT)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Frequency: 866MHz ~ 870MHz
Modulation or Protocol: ASK, FSK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.1V ~ 4V
Power - Output: 13dBm
Current - Transmitting: 14.2mA
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-10-2
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
BCR148WH6327 INFNS17184-1.pdf?t.download=true&u=5oefqw
BCR148WH6327
Виробник: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 100 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
товар відсутній
BCR 148F E6327 bcr148series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a373011440144ad602b8
BCR 148F E6327
Виробник: Infineon Technologies
Description: TRANS PREBIAS NPN 50V TSFP-3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-TSFP-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 100 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
товар відсутній
BCR 148L3 E6327 BCR148_2011.pdf
BCR 148L3 E6327
Виробник: Infineon Technologies
Description: TRANS PREBIAS NPN 50V TSLP-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-TSLP-3-4
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 100 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
товар відсутній
BCR 148T E6327 BCR148_2011.pdf
BCR 148T E6327
Виробник: Infineon Technologies
Description: TRANS PREBIAS NPN 50V 0.07A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SC75-3D
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 100 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
товар відсутній
BCR 148S H6827 bcr148series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a373011440144ad602b8
BCR 148S H6827
Виробник: Infineon Technologies
Description: TRANS 2NPN PREBIAS 0.25W SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Frequency - Transition: 100MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: PG-SOT363-PO
Part Status: Obsolete
товар відсутній
IMBF170R1K0M1XTMA1 Infineon-IMBF170R1K0M1-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b70171820c93e21adc
IMBF170R1K0M1XTMA1
Виробник: Infineon Technologies
Description: SICFET N-CH 1700V 5.2A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 1000mOhm @ 1A, 15V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.1mA
Supplier Device Package: PG-TO263-7-13
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 1000 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1000+176.35 грн
Мінімальне замовлення: 1000
IMBF170R1K0M1XTMA1 Infineon-IMBF170R1K0M1-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b70171820c93e21adc
IMBF170R1K0M1XTMA1
Виробник: Infineon Technologies
Description: SICFET N-CH 1700V 5.2A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 1000mOhm @ 1A, 15V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.1mA
Supplier Device Package: PG-TO263-7-13
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 1000 V
на замовлення 1540 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+341.08 грн
10+ 275.76 грн
100+ 223.12 грн
500+ 186.13 грн
IMBF170R450M1XTMA1 Infineon-IMBF170R450M1-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b70171820c850e1ad9
IMBF170R450M1XTMA1
Виробник: Infineon Technologies
Description: SICFET N-CH 1700V 9.8A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 2A, 15V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 2.5mA
Supplier Device Package: PG-TO263-7-13
Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 1000 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1000+246.76 грн
Мінімальне замовлення: 1000
IMBF170R450M1XTMA1 Infineon-IMBF170R450M1-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b70171820c850e1ad9
IMBF170R450M1XTMA1
Виробник: Infineon Technologies
Description: SICFET N-CH 1700V 9.8A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 2A, 15V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 2.5mA
Supplier Device Package: PG-TO263-7-13
Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 1000 V
на замовлення 1263 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+434.93 грн
10+ 359.01 грн
100+ 299.22 грн
500+ 247.77 грн
SAACIC61508OSRF3VAAAXUMA1
SAACIC61508OSRF3VAAAXUMA1
Виробник: Infineon Technologies
Description: IC SUPERVISOR PWR SUP SUPPORT
товар відсутній
BSZ037N06LS5ATMA1 Infineon-BSZ037N06LS5-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a53b0879f52ec
BSZ037N06LS5ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 18A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 30 V
на замовлення 9960 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+138.87 грн
10+ 121.09 грн
25+ 108.13 грн
100+ 91.33 грн
250+ 81.19 грн
500+ 71.04 грн
1000+ 60.76 грн
Мінімальне замовлення: 3
IPT020N10N5ATMA1 Infineon-IPT020N10N5-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016ac02955ee32f4
IPT020N10N5ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 31A/260A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 260A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 150A, 10V
Power Dissipation (Max): 273W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 202µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2000+217.05 грн
Мінімальне замовлення: 2000
IPT020N10N5ATMA1 Infineon-IPT020N10N5-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016ac02955ee32f4
IPT020N10N5ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 31A/260A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 260A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 150A, 10V
Power Dissipation (Max): 273W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 202µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V
на замовлення 8107 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+464.69 грн
10+ 375.77 грн
100+ 303.99 грн
500+ 253.59 грн
1000+ 217.13 грн
IKFW50N65EH5XKSA1 Infineon-IKFW50N65EH5-DataSheet-v02_01-EN.pdf?fileId=5546d4627506bb3201754b1a2aa576ae
IKFW50N65EH5XKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 59A HSIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 52 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-HSIP247-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/138ns
Switching Energy: 1.2mJ (on), 400µJ (off)
Test Condition: 400V, 40A, 15.1Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 59 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 124 W
на замовлення 105 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+426.54 грн
30+ 327.79 грн
FP40R12KT3BPSA1 Infineon-FP40R12KT3-DS-v02_00-EN.pdf?fileId=db3a304412b407950112b4316d775442
FP40R12KT3BPSA1
Виробник: Infineon Technologies
Description: LOW POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2-8
Part Status: Active
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 105 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
на замовлення 17 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+8837.57 грн
IRF7341GTRPBF irf7341gpbf.pdf?fileId=5546d462533600a4015355f63e9b1b5f
IRF7341GTRPBF
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 55V 5.1A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 5.1A
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4000+57.81 грн
Мінімальне замовлення: 4000
IRF7341GTRPBF irf7341gpbf.pdf?fileId=5546d462533600a4015355f63e9b1b5f
IRF7341GTRPBF
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 55V 5.1A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 5.1A
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 7847 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+128.19 грн
10+ 102.58 грн
100+ 81.62 грн
500+ 64.81 грн
1000+ 54.99 грн
2000+ 52.24 грн
Мінімальне замовлення: 3
CY2314ANZSXC-1 cy2314anz_8.pdf
CY2314ANZSXC-1
Виробник: Infineon Technologies
Description: IC CLK BUFFER 1:14 100MHZ 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: Clock
Type: Fanout Buffer (Distribution)
Input: Clock
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:14
Differential - Input:Output: No/No
Supplier Device Package: 28-SOIC
Frequency - Max: 100 MHz
на замовлення 1243 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
62+345.88 грн
Мінімальне замовлення: 62
CY2314ANZSXC-1T cy2314anz_8.pdf
CY2314ANZSXC-1T
Виробник: Infineon Technologies
Description: IC CLK BUFFER 1:14 100MHZ 28SOIC
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: Clock
Type: Fanout Buffer (Distribution)
Input: Clock
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:14
Differential - Input:Output: No/No
Supplier Device Package: 28-SOIC
Frequency - Max: 100 MHz
на замовлення 5015 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
61+351.51 грн
Мінімальне замовлення: 61
TD215N22KOFHPSA1 Infineon-TT215N-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b42fe0c84e1c
TD215N22KOFHPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 2200V 410A MODULE
товар відсутній
SPA03N60C3XK Infineon-SPP_A03N60C3-DS-v03_00-en.pdf?fileId=db3a304318f3fe29011908f075042a10
SPA03N60C3XK
Виробник: Infineon Technologies
Description: SPA03N60 - 600V COOLMOS N-CHANNE
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 29.7W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
товар відсутній
BCX6916H6327XTSA1 bcx69.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589f3f56603ee&location=.en.product.findProductTypeByName.html_dgdl_bcx69.pdf
BCX6916H6327XTSA1
Виробник: Infineon Technologies
Description: TRANS PNP 20V 1A SOT89
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
на замовлення 19000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1269+18.31 грн
Мінімальне замовлення: 1269
CY15B016Q-SXET Infineon-CY15B016Q_16_KBIT_(2K_X_8)_SERIAL_(SPI)_AUTOMOTIVE-E_F-RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee3f9176a99&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY15B016Q-SXET
Виробник: Infineon Technologies
Description: IC FRAM 16KBIT SPI 16MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.65V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 16 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Part Status: Active
Memory Interface: SPI
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+92.88 грн
Мінімальне замовлення: 2500
IGW50N65F5 Part_Number_Guide_Web.pdf
IGW50N65F5
Виробник: Infineon Technologies
Description: IGBT 650V 80A 305W PG-TO247-3
товар відсутній
BSO303PH INFNS16523-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: 7A, 30V, 0.021OHM, 2-ELEMENT, P
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2678pF @ 25V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: PG-DSO-8
Part Status: Active
товар відсутній
BSO303P INFNS11906-1.pdf?t.download=true&u=5oefqw
BSO303P
Виробник: Infineon Technologies
Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.2A
Input Capacitance (Ciss) (Max) @ Vds: 1761pF @ 25V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 72.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: PG-DSO-8
Part Status: Active
товар відсутній
AUIRFR024NTRL AUIRF%28R%2CU%29024N.pdf
AUIRFR024NTRL
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 17A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
товар відсутній
AUIRFR024NTRL AUIRF%28R%2CU%29024N.pdf
AUIRFR024NTRL
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 17A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
товар відсутній
S70KS1281DPBHI020 Infineon-S27KL0641_S27KS0641_S70KL1281_S70KS1281_3.0_V_1.8_V_64_Mb_(8_MB)_128_Mb_(16_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed18c684db5&utm_source=cypress&utm_medium=referral&utm_ca
S70KS1281DPBHI020
Виробник: Infineon Technologies
Description: IC PSRAM 128MBIT PARALLEL 24FBGA
товар відсутній
BS0200N03S
Виробник: Infineon Technologies
Description: BSO200 - 20V-250V P-CHANNEL POWE
товар відсутній
AIDK12S65C5ATMA1 Infineon-AIDK12S65C5-DataSheet-v03_00-EN.pdf?fileId=5546d462700c0ae601701ac3e9892f51
AIDK12S65C5ATMA1
Виробник: Infineon Technologies
Description: DISCRETE DIODES
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 363pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 70 µA @ 650 V
Qualification: AEC-Q101
товар відсутній
AIDK12S65C5ATMA1 Infineon-AIDK12S65C5-DataSheet-v03_00-EN.pdf?fileId=5546d462700c0ae601701ac3e9892f51
AIDK12S65C5ATMA1
Виробник: Infineon Technologies
Description: DISCRETE DIODES
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 363pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 70 µA @ 650 V
Qualification: AEC-Q101
на замовлення 980 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+404.41 грн
10+ 326.9 грн
100+ 264.48 грн
500+ 220.63 грн
CP8173ATT
Виробник: Infineon Technologies
Description: IC MCU CAPSENSE PLUS 56QFN
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
CP8175ATT
Виробник: Infineon Technologies
Description: IC MCU CAPSENSE PLUS 56QFN
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
CP8173AT
Виробник: Infineon Technologies
Description: IC MCU CAPSENSE PLUS 56QFN
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
CP8175AT
Виробник: Infineon Technologies
Description: IC MCU CAPSENSE PLUS 56QFN
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
Обрати Сторінку:   [  << Попередня Сторінка ]  1 227 389 390 391 392 393 394 395 396 397 398 399 454 681 908 1135 1362 1589 1816 2043 2270 2275  [ Наступна Сторінка >> ]