Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (136442) > Сторінка 401 з 2275
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
TC333LP32F200FAAKXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 2MB FLASH 100TQFP Packaging: Tape & Reel (TR) Package / Case: 100-TQFP Exposed Pad Mounting Type: Surface Mount Speed: 200MHz Program Memory Size: 2MB (2M x 8) RAM Size: 248K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: TriCore™ Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 3.3V, 5V Connectivity: DMA, I2S, PWM, WDT Peripherals: DMA, I2S, PWM, WDT Supplier Device Package: PG-TQFP-100-23 Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
IGP40N65H5 | Infineon Technologies |
Description: IGP40N65 - DISCRETE IGBT WITHOUT Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Supplier Device Package: PG-TO220-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 22ns/165ns Switching Energy: 390µJ (on), 120µJ (off) Test Condition: 400V, 20A, 15Ohm, 15V Gate Charge: 95 nC Part Status: Active Current - Collector (Ic) (Max): 74 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 250 W |
товар відсутній |
||||||||||||||||
BSL302SNL6327 | Infineon Technologies |
Description: SMALL SIGNAL N-CHANNEL MOSFET Packaging: Bulk Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2V @ 30µA Supplier Device Package: PG-TSOP6-6-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V |
товар відсутній |
||||||||||||||||
BSL302SNH6327XTSA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 7.1A TSOP-6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2V @ 30µA Supplier Device Package: PG-TSOP6-6 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V |
товар відсутній |
||||||||||||||||
BSL302SNH6327XTSA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 7.1A TSOP-6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2V @ 30µA Supplier Device Package: PG-TSOP6-6 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V |
товар відсутній |
||||||||||||||||
IRFR540ZTRLPBF | Infineon Technologies |
Description: MOSFET N-CH 100V 35A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 28.5mOhm @ 21A, 10V Power Dissipation (Max): 91W (Tc) Vgs(th) (Max) @ Id: 4V @ 50µA Supplier Device Package: TO-252AA (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V |
на замовлення 27000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
IRFR540ZTRLPBF | Infineon Technologies |
Description: MOSFET N-CH 100V 35A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 28.5mOhm @ 21A, 10V Power Dissipation (Max): 91W (Tc) Vgs(th) (Max) @ Id: 4V @ 50µA Supplier Device Package: TO-252AA (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V |
на замовлення 30543 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
IRSM515-044DA-INF | Infineon Technologies |
Description: IC HALF BRIDGE DRIVER 3A 23DIP Packaging: Bulk Features: Bootstrap Circuit Package / Case: 23-DIP Module (0.573", 14.55mm) Mounting Type: Through Hole Interface: Logic Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (3) Voltage - Supply: 13.5V ~ 16.5V Rds On (Typ): 800mOhm LS, 800mOhm HS Applications: AC Motors Current - Output / Channel: 3A Current - Peak Output: 15A Technology: MOSFET (Metal Oxide) Voltage - Load: 200V (Max) Supplier Device Package: 23-DIP Fault Protection: UVLO Load Type: Inductive Part Status: Active |
на замовлення 120 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
BTS5234G | Infineon Technologies |
Description: HALF-BRIDGE PERIPHERAL DRIVER Packaging: Bulk Part Status: Active |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
BTS5234GXUMA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 DSO-20 Packaging: Bulk Features: Auto Restart, Status Flag Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 45mOhm Input Type: Non-Inverting Voltage - Load: 4.5V ~ 28V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 3.3A Ratio - Input:Output: 1:1 Supplier Device Package: PG-DSO-20-21 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage Part Status: Obsolete |
на замовлення 510 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
IGD10N65T6ARMA1 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 23A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 8.5A Supplier Device Package: PG-TO252-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 30ns/106ns Switching Energy: 200µJ (on), 70µJ (off) Test Condition: 400V, 8.5A, 47Ohm, 15V Gate Charge: 27 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 23 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 42.5 A Power - Max: 75 W |
товар відсутній |
||||||||||||||||
IGD10N65T6ARMA1 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 23A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 8.5A Supplier Device Package: PG-TO252-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 30ns/106ns Switching Energy: 200µJ (on), 70µJ (off) Test Condition: 400V, 8.5A, 47Ohm, 15V Gate Charge: 27 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 23 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 42.5 A Power - Max: 75 W |
товар відсутній |
||||||||||||||||
S2GO3DTLE493DW2B6A0TOBO1 | Infineon Technologies |
Description: TLE493DW2B6 3DSENSE SHIELD2GO Packaging: Box Function: Magnetic Hall Effect Type: Sensor Contents: Board(s) Utilized IC / Part: TLE493D-W2B6 Platform: Shield2Go |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
MB90223PF-GT-269-BNDE1 | Infineon Technologies |
Description: IC MCU 16BIT 64KB MROM 120PQFP Packaging: Tray Package / Case: 120-BQFP Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 64KB (64K x 8) RAM Size: 3K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External Program Memory Type: Mask ROM Core Processor: F²MC-16F Data Converters: A/D 16x10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: EBI/EMI, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 120-QFP (28x28) Part Status: Obsolete Number of I/O: 102 DigiKey Programmable: Not Verified |
товар відсутній |
||||||||||||||||
BSC0803LSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 10A/44A TDSON-6 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 44A (Tc) Rds On (Max) @ Id, Vgs: 14.6mOhm @ 22A, 10V Power Dissipation (Max): 2.5W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 23µA Supplier Device Package: PG-TDSON-8-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
BSC0803LSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 10A/44A TDSON-6 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 44A (Tc) Rds On (Max) @ Id, Vgs: 14.6mOhm @ 22A, 10V Power Dissipation (Max): 2.5W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 23µA Supplier Device Package: PG-TDSON-8-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V |
на замовлення 20585 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
BAS40E6433HTMA1 | Infineon Technologies |
Description: DIODE SCHOTTKY 40V 120MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 100 ps Technology: Schottky Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 120mA Supplier Device Package: PG-SOT23 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Current - Reverse Leakage @ Vr: 1 µA @ 30 V |
на замовлення 72 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
FP50R12W2T7B11BOMA1 | Infineon Technologies |
Description: LOW POWER EASY Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: AG-EASY2B-2 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 8 µA Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V |
на замовлення 11 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
IM393M6FPXKLA1 | Infineon Technologies |
Description: MODULE IGBT 600V 10A 26PWRSIP Packaging: Tube Package / Case: 26-PowerSIP Module, 22 Leads, Formed Leads Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Inverter Voltage - Isolation: 2000Vrms Part Status: Obsolete Current: 10 A Voltage: 600 V |
товар відсутній |
||||||||||||||||
IM393S6FPXKLA1 | Infineon Technologies |
Description: MODULE IGBT 600V 6A 26PWRSIP Packaging: Tube Package / Case: 26-PowerSIP Module, 22 Leads, Formed Leads Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Inverter Voltage - Isolation: 2000Vrms Part Status: Obsolete Current: 6 A Voltage: 600 V |
товар відсутній |
||||||||||||||||
IM393L6FPXKLA1 | Infineon Technologies |
Description: MODULE IGBT 600V 15A 26PWRSIP Packaging: Tube Package / Case: 26-PowerSIP Module, 22 Leads, Formed Leads Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Inverter Voltage - Isolation: 2000Vrms Part Status: Obsolete Current: 15 A Voltage: 600 V |
товар відсутній |
||||||||||||||||
IM393X6FPXKLA1 | Infineon Technologies |
Description: MODULE IGBT 600V 20A 26PWRSIP Packaging: Tube Package / Case: 26-PowerSIP Module, 22 Leads, Formed Leads Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Inverter Voltage - Isolation: 2000Vrms Part Status: Obsolete Current: 20 A Voltage: 600 V |
товар відсутній |
||||||||||||||||
IFF600B12ME4S8PB11BOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 600A 20MW ECONO Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A NTC Thermistor: Yes Supplier Device Package: AG-ECONOD-5 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 600 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 3 mA |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
FF600R12ME4EB11BPSA1 | Infineon Technologies |
Description: MEDIUM POWER ECONO Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A NTC Thermistor: Yes Supplier Device Package: AG-ECONOD-3 IGBT Type: Trench Field Stop Part Status: Last Time Buy Current - Collector (Ic) (Max): 600 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 37 nF @ 25 V |
товар відсутній |
||||||||||||||||
TLE4296GV50HTSA1 | Infineon Technologies |
Description: IC REG LINEAR 5V 30MA SCT595-5 Packaging: Cut Tape (CT) Package / Case: 6-SMD (5 Leads), Gull Wing Output Type: Fixed Mounting Type: Surface Mount Current - Output: 30mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 170 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: PG-SCT595-5 Voltage - Output (Min/Fixed): 5V Control Features: Inhibit Part Status: Active PSRR: 60dB (100Hz) Voltage Dropout (Max): 0.3V @ 20mA Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 5.2 mA Grade: Automotive Qualification: AEC-Q100 |
товар відсутній |
||||||||||||||||
TLE4295GV26HTSA1 | Infineon Technologies |
Description: IC REG LINEAR 2.6V 30MA SCT595-5 Packaging: Bulk Package / Case: 6-SMD (5 Leads), Gull Wing Output Type: Fixed Mounting Type: Surface Mount Current - Output: 30mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 200 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: PG-SCT595-5 Voltage - Output (Min/Fixed): 2.6V Control Features: Power Fail Part Status: Obsolete PSRR: 60dB (100Hz) Voltage Dropout (Max): 0.4V @ 20mA Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 4 mA Grade: Automotive Qualification: AEC-Q100 |
на замовлення 114000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
TLE4295GV30HTSA1 | Infineon Technologies |
Description: IC REG LINEAR 3V 30MA SCT595-5 Packaging: Bulk Package / Case: 6-SMD (5 Leads), Gull Wing Output Type: Fixed Mounting Type: Surface Mount Current - Output: 30mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 200 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: PG-SCT595-5 Voltage - Output (Min/Fixed): 3V Control Features: Power Fail Part Status: Last Time Buy PSRR: 60dB (100Hz) Voltage Dropout (Max): 0.4V @ 20mA Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 4 mA Grade: Automotive Qualification: AEC-Q100 |
на замовлення 69000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
TLE4296GV30HTSA1 | Infineon Technologies |
Description: IC REG LINEAR 3V 30MA SCT595-5 Packaging: Bulk Package / Case: 6-SMD (5 Leads), Gull Wing Output Type: Fixed Mounting Type: Surface Mount Current - Output: 30mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 170 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: PG-SCT595-5 Voltage - Output (Min/Fixed): 3V Control Features: Inhibit Part Status: Obsolete PSRR: 60dB (100Hz) Voltage Dropout (Max): 0.3V @ 20mA Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 4.5 mA Grade: Automotive Qualification: AEC-Q100 |
на замовлення 250000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
TLS105B0MBHTSA1 | Infineon Technologies |
Description: IC REG LIN POS ADJ 120MA SCT595 Packaging: Cut Tape (CT) Package / Case: 6-SMD (5 Leads), Gull Wing Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 120mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 75 µA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: PG-SCT595-5 Voltage - Output (Max): 20V Voltage - Output (Min/Fixed): 2V Control Features: Enable Grade: Automotive Part Status: Active PSRR: 100dB (100Hz) Voltage Dropout (Max): 0.45V @ 50mA Protection Features: Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 5.5 mA Qualification: AEC-Q100 |
на замовлення 10738 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
TLE4286GHTSA1 | Infineon Technologies |
Description: IC REG LINEAR 5V 15MA SCT595-5 Packaging: Cut Tape (CT) Package / Case: 6-SMD (5 Leads), Gull Wing Output Type: Fixed Mounting Type: Surface Mount Current - Output: 15mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 100 µA Voltage - Input (Max): 42V Number of Regulators: 1 Supplier Device Package: PG-SCT595-5 Voltage - Output (Min/Fixed): 5V Control Features: Inhibit Grade: Automotive Part Status: Active PSRR: 60dB (100Hz) Voltage Dropout (Max): 1.1V @ 10mA Protection Features: Over Temperature, Short Circuit Qualification: AEC-Q100 |
на замовлення 490 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
TLE4295GV33HTSA1 | Infineon Technologies |
Description: IC REG LINEAR 3.3V 30MA SCT595-5 Packaging: Cut Tape (CT) Package / Case: 6-SMD (5 Leads), Gull Wing Output Type: Fixed Mounting Type: Surface Mount Current - Output: 30mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 200 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: PG-SCT595-5 Voltage - Output (Min/Fixed): 3.3V Control Features: Power Fail Grade: Automotive Part Status: Active PSRR: 60dB (100Hz) Voltage Dropout (Max): 0.4V @ 20mA Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 4 mA Qualification: AEC-Q100 |
на замовлення 13 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
TLE4296GV33HTSA1 | Infineon Technologies |
Description: IC REG LINEAR 3.3V 30MA SCT595-5 Packaging: Cut Tape (CT) Package / Case: 6-SMD (5 Leads), Gull Wing Output Type: Fixed Mounting Type: Surface Mount Current - Output: 30mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 170 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: PG-SCT595-5 Voltage - Output (Min/Fixed): 3.3V Control Features: Inhibit Grade: Automotive Part Status: Active PSRR: 60dB (100Hz) Voltage Dropout (Max): 0.3V @ 20mA Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 5.2 mA Qualification: AEC-Q100 |
на замовлення 32 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
IRF135S203 | Infineon Technologies |
Description: MOSFET N-CH 135V 129A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 129A (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 77A, 10V Power Dissipation (Max): 441W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 135 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9700 pF @ 50 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
IRF135S203 | Infineon Technologies |
Description: MOSFET N-CH 135V 129A TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 129A (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 77A, 10V Power Dissipation (Max): 441W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 135 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9700 pF @ 50 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
PEF 22554 HT V2.1 | Infineon Technologies | Description: IC TELECOM INTERFACE 144TQFP |
товар відсутній |
||||||||||||||||
BB669 | Infineon Technologies |
Description: VARIABLE CAPACITANCE DIODE Packaging: Bulk Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Diode Type: Single Operating Temperature: -55°C ~ 150°C Capacitance @ Vr, F: 2.9pF @ 28V, 1MHz Capacitance Ratio Condition: C1/C28 Supplier Device Package: PG-SOD323-2-1 Voltage - Peak Reverse (Max): 30 V Capacitance Ratio: 20.9 |
на замовлення 49000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
BB669E7904 | Infineon Technologies |
Description: VARIABLE CAPACITANCE DIODE Packaging: Bulk Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Diode Type: Single Operating Temperature: -55°C ~ 150°C Capacitance @ Vr, F: 2.9pF @ 28V, 1MHz Capacitance Ratio Condition: C1/C28 Supplier Device Package: PG-SOD323-2-1 Voltage - Peak Reverse (Max): 30 V Capacitance Ratio: 20.9 |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
BB659H7902 | Infineon Technologies | Description: VARIABLE CAPACITANCE DIODE |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
BSM50GP60B2BOSA1 | Infineon Technologies |
Description: IGBT MODULE Packaging: Bulk Part Status: Active |
на замовлення 11 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
IPA50R299CPXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 550V 12A TO220-FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 440µA Supplier Device Package: PG-TO220-3-31 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 550 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V |
на замовлення 31927 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
IPA50R299CPXKSA1079 | Infineon Technologies |
Description: IPA50R299 - 500V COOLMOS N-CHANN Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 440µA Supplier Device Package: PG-TO220-3-31 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V |
товар відсутній |
||||||||||||||||
IPA50R299CP | Infineon Technologies |
Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 440µA Supplier Device Package: PG-TO220-3-31 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V |
товар відсутній |
||||||||||||||||
FS150R12KT4PBPSA1 | Infineon Technologies | Description: IGBT MODULE LOW PWR ECONO3-4 |
на замовлення 141 шт: термін постачання 21-31 дні (днів) |
||||||||||||||||
FS150R12PT4 | Infineon Technologies |
Description: INSULATED GATE BIPOLAR TRANSISTO Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A NTC Thermistor: Yes Supplier Device Package: AG-ECONO4-1-1 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 680 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 9.35 nF @ 25 V |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
FS150R17KE3GBOSA1 | Infineon Technologies |
Description: IGBT MOD 1700V 240A 1050W Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 150A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Not For New Designs Current - Collector (Ic) (Max): 240 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 1050 W Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 13.5 nF @ 25 V |
на замовлення 430 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
FS150R17KE3G | Infineon Technologies |
Description: IGBT MODULE Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 150A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 240 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 1050 W Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 13.5 nF @ 25 V |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
FS150R07N3E4 | Infineon Technologies | Description: FS150R07 - IGBT MODULE |
товар відсутній |
||||||||||||||||
FS150R06KL4B4BDLA1 | Infineon Technologies |
Description: MOD IGBT 2 LOW POWER ECONO3-1 Packaging: Tray |
товар відсутній |
||||||||||||||||
FS100R07N3E4_B11 | Infineon Technologies |
Description: IGBT, 100A, 650V, N-CHANNEL Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 100A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 335 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V |
на замовлення 92 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
FS100R12KT4PB15BPSA1 | Infineon Technologies |
Description: IGBT MODULE Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A NTC Thermistor: No Supplier Device Package: AG-ECONO3 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 515 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V |
на замовлення 218 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
FS100R07N2E4_B11 | Infineon Technologies |
Description: FS100R07 - IGBT MODULE Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 100A NTC Thermistor: Yes Supplier Device Package: AG-ECONO2B IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 125 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 20 mW Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
FS100R07PE4BOSA1 | Infineon Technologies |
Description: IGBT MOD 650V 100A 335W Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 100A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 335 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V |
на замовлення 33 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
FS100R12PT4 | Infineon Technologies |
Description: INSULATED GATE BIPOLAR TRANSISTO Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 100A NTC Thermistor: Yes Supplier Device Package: AG-ECONO4-1-1 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 135 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 500 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V |
на замовлення 1832 шт: термін постачання 21-31 дні (днів) |
||||||||||||||||
FS100R12KT4PBPSA1 | Infineon Technologies |
Description: IGBT MODULE LOW PWR ECONO2-6 Packaging: Bulk |
на замовлення 338 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
FS100R17PE4BOSA1 | Infineon Technologies |
Description: IGBT MOD 1700V 100A 600W Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 600 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 9 nF @ 25 V |
на замовлення 171 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
FS100R07N2E4B11BOSA1 | Infineon Technologies |
Description: IGBT MOD 650V 125A 20MW Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 100A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 125 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 20 mW Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V |
товар відсутній |
||||||||||||||||
FS100R17PE4BOSA1 | Infineon Technologies |
Description: IGBT MOD 1700V 100A 600W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 600 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 9 nF @ 25 V |
товар відсутній |
||||||||||||||||
FS100R17KS4F | Infineon Technologies |
Description: IGBT MOD 1700V 100A 960W Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 4.7V @ 15V, 100A NTC Thermistor: Yes Supplier Device Package: Module Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 960 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 7 nF @ 25 V |
товар відсутній |
||||||||||||||||
IRF40H233XTMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 40V 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Supplier Device Package: PG-TDSON-8-900 Part Status: Obsolete |
товар відсутній |
||||||||||||||||
IRF40H233ATMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 40V 65A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.8W (Ta), 50W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 20V Rds On (Max) @ Id, Vgs: 6.2mOhm @ 35A, 10V Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 50µA Supplier Device Package: PG-TDSON-8-4 |
товар відсутній |
TC333LP32F200FAAKXUMA1 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 248K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: DMA, I2S, PWM, WDT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-TQFP-100-23
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 2MB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 248K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: DMA, I2S, PWM, WDT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-TQFP-100-23
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1000+ | 5103.68 грн |
IGP40N65H5 |
Виробник: Infineon Technologies
Description: IGP40N65 - DISCRETE IGBT WITHOUT
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO220-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/165ns
Switching Energy: 390µJ (on), 120µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 250 W
Description: IGP40N65 - DISCRETE IGBT WITHOUT
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO220-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/165ns
Switching Energy: 390µJ (on), 120µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 250 W
товар відсутній
BSL302SNL6327 |
Виробник: Infineon Technologies
Description: SMALL SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: PG-TSOP6-6-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V
Description: SMALL SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: PG-TSOP6-6-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V
товар відсутній
BSL302SNH6327XTSA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 7.1A TSOP-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: PG-TSOP6-6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V
Description: MOSFET N-CH 30V 7.1A TSOP-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: PG-TSOP6-6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V
товар відсутній
BSL302SNH6327XTSA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 7.1A TSOP-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: PG-TSOP6-6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V
Description: MOSFET N-CH 30V 7.1A TSOP-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: PG-TSOP6-6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V
товар відсутній
IRFR540ZTRLPBF |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 35A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 28.5mOhm @ 21A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V
Description: MOSFET N-CH 100V 35A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 28.5mOhm @ 21A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 36.18 грн |
IRFR540ZTRLPBF |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 35A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 28.5mOhm @ 21A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V
Description: MOSFET N-CH 100V 35A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 28.5mOhm @ 21A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V
на замовлення 30543 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 96.14 грн |
10+ | 76.05 грн |
100+ | 59.12 грн |
500+ | 47.03 грн |
1000+ | 38.31 грн |
IRSM515-044DA-INF |
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 3A 23DIP
Packaging: Bulk
Features: Bootstrap Circuit
Package / Case: 23-DIP Module (0.573", 14.55mm)
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 800mOhm LS, 800mOhm HS
Applications: AC Motors
Current - Output / Channel: 3A
Current - Peak Output: 15A
Technology: MOSFET (Metal Oxide)
Voltage - Load: 200V (Max)
Supplier Device Package: 23-DIP
Fault Protection: UVLO
Load Type: Inductive
Part Status: Active
Description: IC HALF BRIDGE DRIVER 3A 23DIP
Packaging: Bulk
Features: Bootstrap Circuit
Package / Case: 23-DIP Module (0.573", 14.55mm)
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 800mOhm LS, 800mOhm HS
Applications: AC Motors
Current - Output / Channel: 3A
Current - Peak Output: 15A
Technology: MOSFET (Metal Oxide)
Voltage - Load: 200V (Max)
Supplier Device Package: 23-DIP
Fault Protection: UVLO
Load Type: Inductive
Part Status: Active
на замовлення 120 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
76+ | 284.34 грн |
BTS5234G |
Виробник: Infineon Technologies
Description: HALF-BRIDGE PERIPHERAL DRIVER
Packaging: Bulk
Part Status: Active
Description: HALF-BRIDGE PERIPHERAL DRIVER
Packaging: Bulk
Part Status: Active
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
125+ | 183.89 грн |
BTS5234GXUMA1 |
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-20
Packaging: Bulk
Features: Auto Restart, Status Flag
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 45mOhm
Input Type: Non-Inverting
Voltage - Load: 4.5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-20-21
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Obsolete
Description: IC PWR SWITCH N-CHAN 1:1 DSO-20
Packaging: Bulk
Features: Auto Restart, Status Flag
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 45mOhm
Input Type: Non-Inverting
Voltage - Load: 4.5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-20-21
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Obsolete
на замовлення 510 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
115+ | 183.9 грн |
IGD10N65T6ARMA1 |
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 23A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 8.5A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/106ns
Switching Energy: 200µJ (on), 70µJ (off)
Test Condition: 400V, 8.5A, 47Ohm, 15V
Gate Charge: 27 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 42.5 A
Power - Max: 75 W
Description: IGBT TRENCH FS 650V 23A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 8.5A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/106ns
Switching Energy: 200µJ (on), 70µJ (off)
Test Condition: 400V, 8.5A, 47Ohm, 15V
Gate Charge: 27 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 42.5 A
Power - Max: 75 W
товар відсутній
IGD10N65T6ARMA1 |
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 23A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 8.5A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/106ns
Switching Energy: 200µJ (on), 70µJ (off)
Test Condition: 400V, 8.5A, 47Ohm, 15V
Gate Charge: 27 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 42.5 A
Power - Max: 75 W
Description: IGBT TRENCH FS 650V 23A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 8.5A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/106ns
Switching Energy: 200µJ (on), 70µJ (off)
Test Condition: 400V, 8.5A, 47Ohm, 15V
Gate Charge: 27 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 42.5 A
Power - Max: 75 W
товар відсутній
S2GO3DTLE493DW2B6A0TOBO1 |
Виробник: Infineon Technologies
Description: TLE493DW2B6 3DSENSE SHIELD2GO
Packaging: Box
Function: Magnetic Hall Effect
Type: Sensor
Contents: Board(s)
Utilized IC / Part: TLE493D-W2B6
Platform: Shield2Go
Description: TLE493DW2B6 3DSENSE SHIELD2GO
Packaging: Box
Function: Magnetic Hall Effect
Type: Sensor
Contents: Board(s)
Utilized IC / Part: TLE493D-W2B6
Platform: Shield2Go
на замовлення 20 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1020.19 грн |
MB90223PF-GT-269-BNDE1 |
Виробник: Infineon Technologies
Description: IC MCU 16BIT 64KB MROM 120PQFP
Packaging: Tray
Package / Case: 120-BQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 3K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16F
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: EBI/EMI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 120-QFP (28x28)
Part Status: Obsolete
Number of I/O: 102
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 64KB MROM 120PQFP
Packaging: Tray
Package / Case: 120-BQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 3K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16F
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: EBI/EMI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 120-QFP (28x28)
Part Status: Obsolete
Number of I/O: 102
DigiKey Programmable: Not Verified
товар відсутній
BSC0803LSATMA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 10A/44A TDSON-6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 22A, 10V
Power Dissipation (Max): 2.5W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 23µA
Supplier Device Package: PG-TDSON-8-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
Description: MOSFET N-CH 100V 10A/44A TDSON-6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 22A, 10V
Power Dissipation (Max): 2.5W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 23µA
Supplier Device Package: PG-TDSON-8-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 50.57 грн |
10000+ | 46.86 грн |
BSC0803LSATMA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 10A/44A TDSON-6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 22A, 10V
Power Dissipation (Max): 2.5W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 23µA
Supplier Device Package: PG-TDSON-8-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
Description: MOSFET N-CH 100V 10A/44A TDSON-6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 22A, 10V
Power Dissipation (Max): 2.5W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 23µA
Supplier Device Package: PG-TDSON-8-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
на замовлення 20585 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 125.14 грн |
10+ | 108.01 грн |
100+ | 84.21 грн |
500+ | 65.28 грн |
1000+ | 51.54 грн |
2000+ | 48.1 грн |
BAS40E6433HTMA1 |
Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 40V 120MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 120mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Description: DIODE SCHOTTKY 40V 120MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 120mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
на замовлення 72 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 32.05 грн |
14+ | 21.82 грн |
FP50R12W2T7B11BOMA1 |
Виробник: Infineon Technologies
Description: LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B-2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 8 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
Description: LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B-2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 8 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
на замовлення 11 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 4633.2 грн |
IM393M6FPXKLA1 |
Виробник: Infineon Technologies
Description: MODULE IGBT 600V 10A 26PWRSIP
Packaging: Tube
Package / Case: 26-PowerSIP Module, 22 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 10 A
Voltage: 600 V
Description: MODULE IGBT 600V 10A 26PWRSIP
Packaging: Tube
Package / Case: 26-PowerSIP Module, 22 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 10 A
Voltage: 600 V
товар відсутній
IM393S6FPXKLA1 |
Виробник: Infineon Technologies
Description: MODULE IGBT 600V 6A 26PWRSIP
Packaging: Tube
Package / Case: 26-PowerSIP Module, 22 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 6 A
Voltage: 600 V
Description: MODULE IGBT 600V 6A 26PWRSIP
Packaging: Tube
Package / Case: 26-PowerSIP Module, 22 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 6 A
Voltage: 600 V
товар відсутній
IM393L6FPXKLA1 |
Виробник: Infineon Technologies
Description: MODULE IGBT 600V 15A 26PWRSIP
Packaging: Tube
Package / Case: 26-PowerSIP Module, 22 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 15 A
Voltage: 600 V
Description: MODULE IGBT 600V 15A 26PWRSIP
Packaging: Tube
Package / Case: 26-PowerSIP Module, 22 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 15 A
Voltage: 600 V
товар відсутній
IM393X6FPXKLA1 |
Виробник: Infineon Technologies
Description: MODULE IGBT 600V 20A 26PWRSIP
Packaging: Tube
Package / Case: 26-PowerSIP Module, 22 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 20 A
Voltage: 600 V
Description: MODULE IGBT 600V 20A 26PWRSIP
Packaging: Tube
Package / Case: 26-PowerSIP Module, 22 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 20 A
Voltage: 600 V
товар відсутній
IFF600B12ME4S8PB11BOSA1 |
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 600A 20MW ECONO
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-5
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Description: IGBT MOD 1200V 600A 20MW ECONO
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-5
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
на замовлення 1 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 23891.65 грн |
FF600R12ME4EB11BPSA1 |
Виробник: Infineon Technologies
Description: MEDIUM POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-3
IGBT Type: Trench Field Stop
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
Description: MEDIUM POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-3
IGBT Type: Trench Field Stop
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
товар відсутній
TLE4296GV50HTSA1 |
Виробник: Infineon Technologies
Description: IC REG LINEAR 5V 30MA SCT595-5
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 30mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 170 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5
Voltage - Output (Min/Fixed): 5V
Control Features: Inhibit
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.3V @ 20mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 5.2 mA
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LINEAR 5V 30MA SCT595-5
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 30mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 170 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5
Voltage - Output (Min/Fixed): 5V
Control Features: Inhibit
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.3V @ 20mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 5.2 mA
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
TLE4295GV26HTSA1 |
Виробник: Infineon Technologies
Description: IC REG LINEAR 2.6V 30MA SCT595-5
Packaging: Bulk
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 30mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5
Voltage - Output (Min/Fixed): 2.6V
Control Features: Power Fail
Part Status: Obsolete
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.4V @ 20mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 4 mA
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LINEAR 2.6V 30MA SCT595-5
Packaging: Bulk
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 30mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5
Voltage - Output (Min/Fixed): 2.6V
Control Features: Power Fail
Part Status: Obsolete
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.4V @ 20mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 4 mA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 114000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
649+ | 32.4 грн |
TLE4295GV30HTSA1 |
Виробник: Infineon Technologies
Description: IC REG LINEAR 3V 30MA SCT595-5
Packaging: Bulk
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 30mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5
Voltage - Output (Min/Fixed): 3V
Control Features: Power Fail
Part Status: Last Time Buy
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.4V @ 20mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 4 mA
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LINEAR 3V 30MA SCT595-5
Packaging: Bulk
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 30mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5
Voltage - Output (Min/Fixed): 3V
Control Features: Power Fail
Part Status: Last Time Buy
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.4V @ 20mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 4 mA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 69000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
564+ | 37.33 грн |
TLE4296GV30HTSA1 |
Виробник: Infineon Technologies
Description: IC REG LINEAR 3V 30MA SCT595-5
Packaging: Bulk
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 30mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 170 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5
Voltage - Output (Min/Fixed): 3V
Control Features: Inhibit
Part Status: Obsolete
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.3V @ 20mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 4.5 mA
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LINEAR 3V 30MA SCT595-5
Packaging: Bulk
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 30mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 170 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5
Voltage - Output (Min/Fixed): 3V
Control Features: Inhibit
Part Status: Obsolete
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.3V @ 20mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 4.5 mA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 250000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
579+ | 36.63 грн |
TLS105B0MBHTSA1 |
Виробник: Infineon Technologies
Description: IC REG LIN POS ADJ 120MA SCT595
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 120mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 75 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 2V
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 100dB (100Hz)
Voltage Dropout (Max): 0.45V @ 50mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 5.5 mA
Qualification: AEC-Q100
Description: IC REG LIN POS ADJ 120MA SCT595
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 120mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 75 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 2V
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 100dB (100Hz)
Voltage Dropout (Max): 0.45V @ 50mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 5.5 mA
Qualification: AEC-Q100
на замовлення 10738 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 68.67 грн |
10+ | 59.59 грн |
25+ | 56.55 грн |
100+ | 43.58 грн |
250+ | 40.74 грн |
500+ | 36 грн |
1000+ | 27.96 грн |
TLE4286GHTSA1 |
Виробник: Infineon Technologies
Description: IC REG LINEAR 5V 15MA SCT595-5
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 15mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5
Voltage - Output (Min/Fixed): 5V
Control Features: Inhibit
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 1.1V @ 10mA
Protection Features: Over Temperature, Short Circuit
Qualification: AEC-Q100
Description: IC REG LINEAR 5V 15MA SCT595-5
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 15mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5
Voltage - Output (Min/Fixed): 5V
Control Features: Inhibit
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 1.1V @ 10mA
Protection Features: Over Temperature, Short Circuit
Qualification: AEC-Q100
на замовлення 490 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 65.62 грн |
10+ | 56.65 грн |
25+ | 53.73 грн |
100+ | 41.42 грн |
250+ | 38.72 грн |
TLE4295GV33HTSA1 |
Виробник: Infineon Technologies
Description: IC REG LINEAR 3.3V 30MA SCT595-5
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 30mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5
Voltage - Output (Min/Fixed): 3.3V
Control Features: Power Fail
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.4V @ 20mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 4 mA
Qualification: AEC-Q100
Description: IC REG LINEAR 3.3V 30MA SCT595-5
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 30mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5
Voltage - Output (Min/Fixed): 3.3V
Control Features: Power Fail
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.4V @ 20mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 4 mA
Qualification: AEC-Q100
на замовлення 13 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 90.8 грн |
10+ | 78.18 грн |
TLE4296GV33HTSA1 |
Виробник: Infineon Technologies
Description: IC REG LINEAR 3.3V 30MA SCT595-5
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 30mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 170 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5
Voltage - Output (Min/Fixed): 3.3V
Control Features: Inhibit
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.3V @ 20mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 5.2 mA
Qualification: AEC-Q100
Description: IC REG LINEAR 3.3V 30MA SCT595-5
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 30mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 170 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5
Voltage - Output (Min/Fixed): 3.3V
Control Features: Inhibit
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.3V @ 20mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 5.2 mA
Qualification: AEC-Q100
на замовлення 32 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 80.88 грн |
10+ | 69.73 грн |
25+ | 66.16 грн |
IRF135S203 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 135V 129A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 129A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 77A, 10V
Power Dissipation (Max): 441W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9700 pF @ 50 V
Description: MOSFET N-CH 135V 129A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 129A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 77A, 10V
Power Dissipation (Max): 441W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9700 pF @ 50 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
800+ | 130.59 грн |
IRF135S203 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 135V 129A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 129A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 77A, 10V
Power Dissipation (Max): 441W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9700 pF @ 50 V
Description: MOSFET N-CH 135V 129A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 129A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 77A, 10V
Power Dissipation (Max): 441W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9700 pF @ 50 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 215.94 грн |
10+ | 174.88 грн |
100+ | 141.47 грн |
PEF 22554 HT V2.1 |
Виробник: Infineon Technologies
Description: IC TELECOM INTERFACE 144TQFP
Description: IC TELECOM INTERFACE 144TQFP
товар відсутній
BB669 |
Виробник: Infineon Technologies
Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 2.9pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SOD323-2-1
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 20.9
Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 2.9pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SOD323-2-1
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 20.9
на замовлення 49000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
15000+ | 1.39 грн |
BB669E7904 |
Виробник: Infineon Technologies
Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 2.9pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SOD323-2-1
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 20.9
Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 2.9pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SOD323-2-1
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 20.9
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6918+ | 2.79 грн |
BB659H7902 |
Виробник: Infineon Technologies
Description: VARIABLE CAPACITANCE DIODE
Description: VARIABLE CAPACITANCE DIODE
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12000+ | 2.32 грн |
BSM50GP60B2BOSA1 |
на замовлення 11 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 4172.96 грн |
IPA50R299CPXKSA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 550V 12A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO220-3-31
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
Description: MOSFET N-CH 550V 12A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO220-3-31
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
на замовлення 31927 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
315+ | 66.94 грн |
IPA50R299CPXKSA1079 |
Виробник: Infineon Technologies
Description: IPA50R299 - 500V COOLMOS N-CHANN
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
Description: IPA50R299 - 500V COOLMOS N-CHANN
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
товар відсутній
IPA50R299CP |
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
товар відсутній
FS150R12KT4PBPSA1 |
Виробник: Infineon Technologies
Description: IGBT MODULE LOW PWR ECONO3-4
Description: IGBT MODULE LOW PWR ECONO3-4
на замовлення 141 шт:
термін постачання 21-31 дні (днів)FS150R12PT4 |
Виробник: Infineon Technologies
Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO4-1-1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 680 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.35 nF @ 25 V
Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO4-1-1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 680 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.35 nF @ 25 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 11500.21 грн |
FS150R17KE3GBOSA1 |
Виробник: Infineon Technologies
Description: IGBT MOD 1700V 240A 1050W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1050 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 13.5 nF @ 25 V
Description: IGBT MOD 1700V 240A 1050W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1050 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 13.5 nF @ 25 V
на замовлення 430 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 32961.19 грн |
FS150R17KE3G |
Виробник: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1050 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 13.5 nF @ 25 V
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1050 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 13.5 nF @ 25 V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 35298.39 грн |
FS150R06KL4B4BDLA1 |
товар відсутній
FS100R07N3E4_B11 |
Виробник: Infineon Technologies
Description: IGBT, 100A, 650V, N-CHANNEL
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 335 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V
Description: IGBT, 100A, 650V, N-CHANNEL
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 335 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V
на замовлення 92 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 7250.19 грн |
FS100R12KT4PB15BPSA1 |
Виробник: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: AG-ECONO3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 515 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: AG-ECONO3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 515 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
на замовлення 218 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 8708.87 грн |
FS100R07N2E4_B11 |
Виробник: Infineon Technologies
Description: FS100R07 - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 125 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V
Description: FS100R07 - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 125 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 6076.12 грн |
FS100R07PE4BOSA1 |
Виробник: Infineon Technologies
Description: IGBT MOD 650V 100A 335W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 335 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V
Description: IGBT MOD 650V 100A 335W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 335 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V
на замовлення 33 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 12439.13 грн |
FS100R12PT4 |
Виробник: Infineon Technologies
Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO4-1-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 135 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO4-1-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 135 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
на замовлення 1832 шт:
термін постачання 21-31 дні (днів)FS100R12KT4PBPSA1 |
на замовлення 338 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 14512.71 грн |
FS100R17PE4BOSA1 |
Виробник: Infineon Technologies
Description: IGBT MOD 1700V 100A 600W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
Description: IGBT MOD 1700V 100A 600W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
на замовлення 171 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 14242.21 грн |
FS100R07N2E4B11BOSA1 |
Виробник: Infineon Technologies
Description: IGBT MOD 650V 125A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 125 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V
Description: IGBT MOD 650V 125A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 125 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V
товар відсутній
FS100R17PE4BOSA1 |
Виробник: Infineon Technologies
Description: IGBT MOD 1700V 100A 600W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
Description: IGBT MOD 1700V 100A 600W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
товар відсутній
FS100R17KS4F |
Виробник: Infineon Technologies
Description: IGBT MOD 1700V 100A 960W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 4.7V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 960 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 7 nF @ 25 V
Description: IGBT MOD 1700V 100A 960W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 4.7V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 960 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 7 nF @ 25 V
товар відсутній
IRF40H233XTMA1 |
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 40V 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Supplier Device Package: PG-TDSON-8-900
Part Status: Obsolete
Description: MOSFET 2N-CH 40V 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Supplier Device Package: PG-TDSON-8-900
Part Status: Obsolete
товар відсутній
IRF40H233ATMA1 |
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 40V 65A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.8W (Ta), 50W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 20V
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 35A, 10V
Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 50µA
Supplier Device Package: PG-TDSON-8-4
Description: MOSFET 2N-CH 40V 65A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.8W (Ta), 50W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 20V
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 35A, 10V
Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 50µA
Supplier Device Package: PG-TDSON-8-4
товар відсутній