Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (137833) > Сторінка 321 з 2298
Фото | Назва | Виробник | Інформація |
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CHL8328-20CRT | Infineon Technologies |
Description: IC REG CTRLR DDR 2OUT 56VQFN Packaging: Tape & Reel (TR) Package / Case: 56-VFQFN Exposed Pad Mounting Type: Surface Mount Number of Outputs: 2 Voltage - Input: 3.3V Operating Temperature: -20°C ~ 85°C (TA) Applications: Controller, DDR, Intel VR12, AMD SVI, PVI Supplier Device Package: PG-VQFN-56-901 Part Status: Obsolete |
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CHL8328-24CRT | Infineon Technologies |
Description: IC REG CTRLR DDR 2OUT 56VQFN Packaging: Tape & Reel (TR) Package / Case: 56-VFQFN Exposed Pad Mounting Type: Surface Mount Number of Outputs: 2 Voltage - Input: 3.3V Operating Temperature: -20°C ~ 85°C (TA) Applications: Controller, DDR, Intel VR12, AMD SVI, PVI Supplier Device Package: PG-VQFN-56-901 Part Status: Obsolete |
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CHL8328-32CRT | Infineon Technologies | Description: IC REG CTRLR DDR 2OUT 56VQFN |
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IKW40N120CS6XKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 1200V 80A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 400 ns Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A Supplier Device Package: PG-TO247-3-41 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 27ns/315ns Switching Energy: 2.55mJ (on), 1.55mJ (off) Test Condition: 600V, 40A, 9Ohm, 15V Gate Charge: 285 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 500 W |
на замовлення 644 шт: термін постачання 21-31 дні (днів) |
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IKY40N120CS6XKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 1200V 80A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 255 ns Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A Supplier Device Package: PG-TO247-4-2 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 27ns/315ns Switching Energy: 1.45mJ (on), 1.55mJ (off) Test Condition: 600V, 40A, 9Ohm, 15V Gate Charge: 285 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 500 W |
на замовлення 723 шт: термін постачання 21-31 дні (днів) |
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IKY75N120CS6XKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 1200V 150A TO247 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 205 ns Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A Supplier Device Package: PG-TO247-4-2 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 32ns/300ns Switching Energy: 2.2mJ (on), 2.95mJ (off) Test Condition: 600V, 75A, 4Ohm, 15V Gate Charge: 530 nC Part Status: Active Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 300 A Power - Max: 880 W |
на замовлення 140 шт: термін постачання 21-31 дні (днів) |
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ICL5102XUMA2 | Infineon Technologies |
Description: IC LED DRIVER OFFL NO 16DSO Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 1.3MHz Type: AC DC Offline Switcher Operating Temperature: -40°C ~ 125°C (TJ) Applications: LED Lighting Internal Switch(s): No Topology: Half-Bridge Supplier Device Package: PG-DSO-16-23 Dimming: No Voltage - Supply (Min): 8.5V Voltage - Supply (Max): 18V Part Status: Active |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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ICL5102XUMA2 | Infineon Technologies |
Description: IC LED DRIVER OFFL NO 16DSO Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 1.3MHz Type: AC DC Offline Switcher Operating Temperature: -40°C ~ 125°C (TJ) Applications: LED Lighting Internal Switch(s): No Topology: Half-Bridge Supplier Device Package: PG-DSO-16-23 Dimming: No Voltage - Supply (Min): 8.5V Voltage - Supply (Max): 18V Part Status: Active |
на замовлення 4917 шт: термін постачання 21-31 дні (днів) |
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1EDN7550BXTSA1 | Infineon Technologies |
Description: IC GATE DRVR HIGH-SIDE SOT23-6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 84 V Supplier Device Package: PG-SOT23-6 Rise / Fall Time (Typ): 6.5ns, 4.5ns Channel Type: Single Driven Configuration: High-Side Number of Drivers: 1 Gate Type: N-Channel, P-Channel MOSFET Current - Peak Output (Source, Sink): 4A, 8A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 6991 шт: термін постачання 21-31 дні (днів) |
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1EDN8550BXTSA1 | Infineon Technologies |
Description: IC GATE DRVR HIGH-SIDE SOT23-6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 84 V Supplier Device Package: PG-SOT23-6 Rise / Fall Time (Typ): 6.5ns, 4.5ns Channel Type: Single Driven Configuration: High-Side Number of Drivers: 1 Gate Type: N-Channel, P-Channel MOSFET Current - Peak Output (Source, Sink): 4A, 8A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 2349 шт: термін постачання 21-31 дні (днів) |
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2EDF7275FXUMA1 | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDG DSO16-11 Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 20V Input Type: Non-Inverting Supplier Device Package: PG-DSO-16-11 Rise / Fall Time (Typ): 6.5ns, 4.5ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel, P-Channel MOSFET Logic Voltage - VIL, VIH: -, 1.65V Current - Peak Output (Source, Sink): 4A, 8A DigiKey Programmable: Not Verified |
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IPD95R2K0P7ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 950V 4A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 1.7A, 10V Power Dissipation (Max): 37W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 80µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 400 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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IPD95R1K2P7ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 950V 6A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.7A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 140µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 478 pF @ 400 V |
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IPD95R750P7ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 950V 9A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V Power Dissipation (Max): 73W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 220µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 712 pF @ 400 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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IPD95R450P7ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 950V 14A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 360µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1053 pF @ 400 V |
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IPU95R3K7P7AKMA1 | Infineon Technologies |
Description: MOSFET N-CH 950V 2A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 3.7Ohm @ 800mA, 10V Power Dissipation (Max): 22W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 40µA Supplier Device Package: PG-TO251-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 400 V |
на замовлення 797 шт: термін постачання 21-31 дні (днів) |
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IPU95R2K0P7AKMA1 | Infineon Technologies |
Description: MOSFET N-CH 950V 4A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 1.7A, 10V Power Dissipation (Max): 37W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 80µA Supplier Device Package: PG-TO251-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 400 V |
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IPU95R1K2P7AKMA1 | Infineon Technologies |
Description: MOSFET N-CH 950V 6A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.7A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 140µA Supplier Device Package: PG-TO251-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 478 pF @ 400 V |
на замовлення 1468 шт: термін постачання 21-31 дні (днів) |
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IPU95R750P7AKMA1 | Infineon Technologies | Description: MOSFET N-CH 950V 9A TO251-3 |
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IPN95R3K7P7ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 950V 2A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 3.7Ohm @ 800mA, 10V Power Dissipation (Max): 6W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 40µA Supplier Device Package: PG-SOT223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 400 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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IPN95R2K0P7ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 950V 4A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 1.7A, 10V Power Dissipation (Max): 7W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 80µA Supplier Device Package: PG-SOT223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 400 V |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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IPD95R2K0P7ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 950V 4A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 1.7A, 10V Power Dissipation (Max): 37W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 80µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 400 V |
на замовлення 3020 шт: термін постачання 21-31 дні (днів) |
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IPD95R1K2P7ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 950V 6A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.7A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 140µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 478 pF @ 400 V |
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IPD95R750P7ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 950V 9A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V Power Dissipation (Max): 73W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 220µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 712 pF @ 400 V |
на замовлення 3738 шт: термін постачання 21-31 дні (днів) |
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IPD95R450P7ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 950V 14A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 360µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1053 pF @ 400 V |
на замовлення 285 шт: термін постачання 21-31 дні (днів) |
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IPN95R3K7P7ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 950V 2A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 3.7Ohm @ 800mA, 10V Power Dissipation (Max): 6W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 40µA Supplier Device Package: PG-SOT223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 400 V |
на замовлення 8221 шт: термін постачання 21-31 дні (днів) |
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IPN95R2K0P7ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 950V 4A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 1.7A, 10V Power Dissipation (Max): 7W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 80µA Supplier Device Package: PG-SOT223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 400 V |
на замовлення 23531 шт: термін постачання 21-31 дні (днів) |
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EVALM3102TTOBO1 | Infineon Technologies |
Description: IMOTION IMC102T-F064 IMOTION Packaging: Bulk Function: Motor Controller/Driver Type: Power Management Utilized IC / Part: IMC102 Supplied Contents: Board(s) Part Status: Obsolete |
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IPB65R045C7ATMA2 | Infineon Technologies |
Description: MOSFET N-CH 650V 46A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.25mA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V |
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IPB65R065C7ATMA2 | Infineon Technologies |
Description: MOSFET N-CH 650V 33A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 17.1A, 10V Power Dissipation (Max): 171W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 200µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 400 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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IPB65R095C7ATMA2 | Infineon Technologies |
Description: MOSFET N-CH 650V 24A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 11.8A, 10V Power Dissipation (Max): 128W (Tc) Vgs(th) (Max) @ Id: 4V @ 590µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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IPB65R125C7ATMA2 | Infineon Technologies |
Description: MOSFET N-CH 650V 18A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 8.9A, 10V Power Dissipation (Max): 101W (Tc) Vgs(th) (Max) @ Id: 4V @ 440µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 400 V |
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IPB65R190C7ATMA2 | Infineon Technologies |
Description: MOSFET N-CH 650V 13A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 5.7A, 10V Power Dissipation (Max): 72W (Tc) Vgs(th) (Max) @ Id: 4V @ 290µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 400 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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IPB65R225C7ATMA2 | Infineon Technologies | Description: MOSFET N-CH 650V 11A TO-263-3 |
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IPB65R045C7ATMA2 | Infineon Technologies |
Description: MOSFET N-CH 650V 46A TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.25mA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V |
на замовлення 778 шт: термін постачання 21-31 дні (днів) |
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IPB65R065C7ATMA2 | Infineon Technologies |
Description: MOSFET N-CH 650V 33A TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 17.1A, 10V Power Dissipation (Max): 171W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 200µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 400 V |
на замовлення 5062 шт: термін постачання 21-31 дні (днів) |
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IPB65R095C7ATMA2 | Infineon Technologies |
Description: MOSFET N-CH 650V 24A TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 11.8A, 10V Power Dissipation (Max): 128W (Tc) Vgs(th) (Max) @ Id: 4V @ 590µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V |
на замовлення 3189 шт: термін постачання 21-31 дні (днів) |
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IPB65R190C7ATMA2 | Infineon Technologies |
Description: MOSFET N-CH 650V 13A TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 5.7A, 10V Power Dissipation (Max): 72W (Tc) Vgs(th) (Max) @ Id: 4V @ 290µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 400 V |
на замовлення 1615 шт: термін постачання 21-31 дні (днів) |
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CG7497AAT | Infineon Technologies |
Description: IC MCU CAPSENSE Packaging: Tape & Reel (TR) Part Status: Obsolete DigiKey Programmable: Not Verified |
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MB90F394HPMT-GS-N2E1 | Infineon Technologies |
Description: IC MCU 16BIT 384KB FLASH 120LQFP Packaging: Bulk Package / Case: 120-LQFP Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 384KB (384K x 8) RAM Size: 10K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: FLASH Core Processor: F²MC-16LX Data Converters: A/D 15x8/10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V Connectivity: CANbus, LINbus, SCI, Serial I/O, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 120-LQFP (16x16) Number of I/O: 96 DigiKey Programmable: Not Verified |
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MB91195ABGL-G-258-K8ERE1 | Infineon Technologies |
Description: IC MICROCONTROLLER Packaging: Bulk DigiKey Programmable: Not Verified |
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V29F010B-120PC | Infineon Technologies |
Description: IC MEMORY NOR Packaging: Bulk Part Status: Obsolete DigiKey Programmable: Not Verified |
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V29F400BT-150SC | Infineon Technologies |
Description: IC MEMORY NOR Packaging: Bulk DigiKey Programmable: Not Verified |
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CG7497AA | Infineon Technologies |
Description: IC MCU CAPSENSE Packaging: Tray Part Status: Obsolete DigiKey Programmable: Not Verified |
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TDA21232AUMA1 | Infineon Technologies | Description: IC MOSFET DRIVER 40PIQFN |
товар відсутній |
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TLE9262BQXXUMA1 | Infineon Technologies |
Description: IC INTERFACE SPECIALIZED 48VQFN Packaging: Cut Tape (CT) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: SPI Voltage - Supply: 28V Supplier Device Package: PG-VQFN-48-31 Part Status: Not For New Designs Grade: Automotive |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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TLE9262BQXV33XUMA1 | Infineon Technologies |
Description: IC INTERFACE SPECIALIZED 48VQFN Packaging: Cut Tape (CT) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: SPI Voltage - Supply: 28V Applications: Automotive Supplier Device Package: PG-VQFN-48-31 Part Status: Not For New Designs |
на замовлення 2478 шт: термін постачання 21-31 дні (днів) |
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TLE9263BQXV33XUMA1 | Infineon Technologies |
Description: IC INTERFACE SPECIALIZED 48VQFN Packaging: Cut Tape (CT) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: SPI Voltage - Supply: 28V Supplier Device Package: PG-VQFN-48-31 Part Status: Not For New Designs Grade: Automotive |
на замовлення 4455 шт: термін постачання 21-31 дні (днів) |
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BGS14MA11E6327XTSA1 | Infineon Technologies |
Description: IC RF SWITCH SP4T 6GHZ ATSLP11-1 Packaging: Cut Tape (CT) Package / Case: 11-UFLGA Impedance: 50Ohm Mounting Type: Surface Mount Circuit: SP4T RF Type: LTE, W-CDMA Operating Temperature: 125°C (TJ) Voltage - Supply: 1.7V ~ 3.4V Insertion Loss: 0.85dB Frequency Range: 100MHz ~ 6GHz Test Frequency: 6GHz Isolation: 18dB Supplier Device Package: PG-ATSLP-11-1 Part Status: Active |
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TLE4959CFXHAMA1 | Infineon Technologies |
Description: SENSOR ROTARY PC PIN Packaging: Cut Tape (CT) Package / Case: 3-SIP Module Mounting Type: Through Hole Output: Analog Voltage, PWM Operating Temperature: -40°C ~ 175°C (TJ) Termination Style: PC Pin Voltage - Supply: 4V ~ 16V Actuator Type: External Magnet, Not Included Technology: Hall Effect For Measuring: Linear, Rotary Position Supplier Device Package: PG-SSO-3-52 Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 180 шт: термін постачання 21-31 дні (днів) |
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TLE4959CHAMA1 | Infineon Technologies |
Description: SENSOR ROTARY PC PIN Packaging: Cut Tape (CT) Package / Case: 3-SIP Module Mounting Type: Through Hole Output: Analog Voltage, PWM Operating Temperature: -40°C ~ 175°C (TJ) Termination Style: PC Pin Voltage - Supply: 4V ~ 16V Actuator Type: External Magnet, Not Included Technology: Hall Effect For Measuring: Linear, Rotary Position Supplier Device Package: PG-SSO-3-52 Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 141 шт: термін постачання 21-31 дні (днів) |
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TLE5014C16XUMA1 | Infineon Technologies |
Description: SENSOR ANGLE 360DEG GULL WING Packaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: SPC Operating Temperature: -40°C ~ 125°C Termination Style: Gull Wing Voltage - Supply: 4.2V ~ 5.5V Actuator Type: External Magnet, Not Included Technology: Magnetoresistive For Measuring: Angle, Linear, Rotary Supplier Device Package: PG-TDSO-16 Rotation Angle - Electrical, Mechanical: 0° ~ 360° Output Signal: Cosine, Sine Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 176 шт: термін постачання 21-31 дні (днів) |
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TLE5014P16XUMA1 | Infineon Technologies |
Description: SENSOR ANGLE 360DEG GULL WING Packaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: PWM Operating Temperature: -40°C ~ 125°C Termination Style: Gull Wing Voltage - Supply: 4.2V ~ 5.5V Actuator Type: External Magnet, Not Included Technology: Magnetoresistive For Measuring: Angle, Linear, Rotary Supplier Device Package: PG-TDSO-16 Rotation Angle - Electrical, Mechanical: 0° ~ 360° Output Signal: Cosine, Sine Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 74 шт: термін постачання 21-31 дні (днів) |
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TLE5014S16XUMA1 | Infineon Technologies |
Description: SENSOR ANGLE 360DEG GULL WING Packaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: SENT Operating Temperature: -40°C ~ 125°C Termination Style: Gull Wing Voltage - Supply: 4.2V ~ 5.5V Actuator Type: External Magnet, Not Included Technology: Magnetoresistive For Measuring: Angle, Linear, Rotary Supplier Device Package: PG-TDSO-16 Rotation Angle - Electrical, Mechanical: 0° ~ 360° Output Signal: Cosine, Sine Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 181 шт: термін постачання 21-31 дні (днів) |
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TLE5014C16DXUMA1 | Infineon Technologies |
Description: SENSOR ANGLE 360DEG GULL WING Packaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: SPC Operating Temperature: -40°C ~ 125°C Termination Style: Gull Wing Voltage - Supply: 4.2V ~ 5.5V Actuator Type: External Magnet, Not Included Technology: Magnetoresistive For Measuring: Angle, Linear, Rotary Supplier Device Package: PG-TDSO-16 Rotation Angle - Electrical, Mechanical: 0° ~ 360° Output Signal: Cosine, Sine Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 153 шт: термін постачання 21-31 дні (днів) |
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TLE5014S16DXUMA1 | Infineon Technologies |
Description: SENSOR ANGLE 360DEG GULL WING Packaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: SENT Operating Temperature: -40°C ~ 125°C Termination Style: Gull Wing Voltage - Supply: 4.2V ~ 5.5V Actuator Type: External Magnet, Not Included Technology: Magnetoresistive For Measuring: Angle, Linear, Rotary Supplier Device Package: PG-TDSO-16 Rotation Angle - Electrical, Mechanical: 0° ~ 360° Output Signal: Cosine, Sine Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 282 шт: термін постачання 21-31 дні (днів) |
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IFX007TAUMA1 | Infineon Technologies |
Description: IC HALF BRIDGE DRVR 55A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Interface: PWM Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 8V ~ 40V Rds On (Typ): 4.7mOhm LS, 5.3mOhm HS Applications: DC Motors, General Purpose Current - Output / Channel: 55A Technology: Power MOSFET Voltage - Load: 8V ~ 40V Supplier Device Package: PG-TO263-7-1 Fault Protection: Current Limiting, Open Load Detect, Over Temperature, Short Circuit, UVLO Load Type: Inductive Part Status: Active |
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IRFR3710ZTRLPBF | Infineon Technologies |
Description: MOSFET N-CH 100V 42A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 33A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 25 V |
на замовлення 9916 шт: термін постачання 21-31 дні (днів) |
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MB95F574KNPF-G-SNE2 | Infineon Technologies |
Description: IC MCU 8BIT 20KB FLASH 8SOP Packaging: Tube Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 20KB (20K x 8) RAM Size: 496 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: FLASH Core Processor: F²MC-8FX Data Converters: A/D 2x8/10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V Connectivity: LINbus, UART/USART Peripherals: LVD, POR, PWM, WDT Supplier Device Package: 8-SOP Number of I/O: 5 DigiKey Programmable: Not Verified |
на замовлення 4941 шт: термін постачання 21-31 дні (днів) |
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MB95F572KPF-G-SNE2 | Infineon Technologies |
Description: IC MCU 8BIT 8KB FLASH 8SOP Packaging: Tube Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 8KB (8K x 8) RAM Size: 240 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: FLASH Core Processor: F²MC-8FX Data Converters: A/D 2x8/10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V Connectivity: LINbus, UART/USART Peripherals: LVD, POR, PWM, WDT Supplier Device Package: 8-SOP Number of I/O: 5 DigiKey Programmable: Not Verified |
на замовлення 100307 шт: термін постачання 21-31 дні (днів) |
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CHL8328-20CRT |
Виробник: Infineon Technologies
Description: IC REG CTRLR DDR 2OUT 56VQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: -20°C ~ 85°C (TA)
Applications: Controller, DDR, Intel VR12, AMD SVI, PVI
Supplier Device Package: PG-VQFN-56-901
Part Status: Obsolete
Description: IC REG CTRLR DDR 2OUT 56VQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: -20°C ~ 85°C (TA)
Applications: Controller, DDR, Intel VR12, AMD SVI, PVI
Supplier Device Package: PG-VQFN-56-901
Part Status: Obsolete
товар відсутній
CHL8328-24CRT |
Виробник: Infineon Technologies
Description: IC REG CTRLR DDR 2OUT 56VQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: -20°C ~ 85°C (TA)
Applications: Controller, DDR, Intel VR12, AMD SVI, PVI
Supplier Device Package: PG-VQFN-56-901
Part Status: Obsolete
Description: IC REG CTRLR DDR 2OUT 56VQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: -20°C ~ 85°C (TA)
Applications: Controller, DDR, Intel VR12, AMD SVI, PVI
Supplier Device Package: PG-VQFN-56-901
Part Status: Obsolete
товар відсутній
CHL8328-32CRT |
Виробник: Infineon Technologies
Description: IC REG CTRLR DDR 2OUT 56VQFN
Description: IC REG CTRLR DDR 2OUT 56VQFN
товар відсутній
IKW40N120CS6XKSA1 |
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 1200V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 400 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/315ns
Switching Energy: 2.55mJ (on), 1.55mJ (off)
Test Condition: 600V, 40A, 9Ohm, 15V
Gate Charge: 285 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 500 W
Description: IGBT TRENCH FS 1200V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 400 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/315ns
Switching Energy: 2.55mJ (on), 1.55mJ (off)
Test Condition: 600V, 40A, 9Ohm, 15V
Gate Charge: 285 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 500 W
на замовлення 644 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 475.19 грн |
30+ | 365.17 грн |
120+ | 326.72 грн |
510+ | 270.55 грн |
IKY40N120CS6XKSA1 |
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 1200V 80A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 255 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
Supplier Device Package: PG-TO247-4-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/315ns
Switching Energy: 1.45mJ (on), 1.55mJ (off)
Test Condition: 600V, 40A, 9Ohm, 15V
Gate Charge: 285 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 500 W
Description: IGBT TRENCH FS 1200V 80A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 255 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
Supplier Device Package: PG-TO247-4-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/315ns
Switching Energy: 1.45mJ (on), 1.55mJ (off)
Test Condition: 600V, 40A, 9Ohm, 15V
Gate Charge: 285 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 500 W
на замовлення 723 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 501.8 грн |
30+ | 385.47 грн |
120+ | 344.89 грн |
510+ | 285.58 грн |
IKY75N120CS6XKSA1 |
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 1200V 150A TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 205 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Supplier Device Package: PG-TO247-4-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/300ns
Switching Energy: 2.2mJ (on), 2.95mJ (off)
Test Condition: 600V, 75A, 4Ohm, 15V
Gate Charge: 530 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 880 W
Description: IGBT TRENCH FS 1200V 150A TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 205 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Supplier Device Package: PG-TO247-4-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/300ns
Switching Energy: 2.2mJ (on), 2.95mJ (off)
Test Condition: 600V, 75A, 4Ohm, 15V
Gate Charge: 530 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 880 W
на замовлення 140 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 724.57 грн |
30+ | 556.92 грн |
120+ | 498.28 грн |
ICL5102XUMA2 |
Виробник: Infineon Technologies
Description: IC LED DRIVER OFFL NO 16DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.3MHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: LED Lighting
Internal Switch(s): No
Topology: Half-Bridge
Supplier Device Package: PG-DSO-16-23
Dimming: No
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Part Status: Active
Description: IC LED DRIVER OFFL NO 16DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.3MHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: LED Lighting
Internal Switch(s): No
Topology: Half-Bridge
Supplier Device Package: PG-DSO-16-23
Dimming: No
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Part Status: Active
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 87.66 грн |
ICL5102XUMA2 |
Виробник: Infineon Technologies
Description: IC LED DRIVER OFFL NO 16DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.3MHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: LED Lighting
Internal Switch(s): No
Topology: Half-Bridge
Supplier Device Package: PG-DSO-16-23
Dimming: No
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Part Status: Active
Description: IC LED DRIVER OFFL NO 16DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.3MHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: LED Lighting
Internal Switch(s): No
Topology: Half-Bridge
Supplier Device Package: PG-DSO-16-23
Dimming: No
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Part Status: Active
на замовлення 4917 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 191.6 грн |
10+ | 165.68 грн |
25+ | 156.33 грн |
100+ | 124.98 грн |
250+ | 117.36 грн |
500+ | 102.69 грн |
1000+ | 83.69 грн |
1EDN7550BXTSA1 |
Виробник: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 84 V
Supplier Device Package: PG-SOT23-6
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: N-Channel, P-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HIGH-SIDE SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 84 V
Supplier Device Package: PG-SOT23-6
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: N-Channel, P-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 6991 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 69.19 грн |
10+ | 59.45 грн |
25+ | 56.43 грн |
100+ | 43.51 грн |
250+ | 40.67 грн |
500+ | 35.94 грн |
1000+ | 27.91 грн |
1EDN8550BXTSA1 |
Виробник: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 84 V
Supplier Device Package: PG-SOT23-6
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: N-Channel, P-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HIGH-SIDE SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 84 V
Supplier Device Package: PG-SOT23-6
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: N-Channel, P-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2349 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 69.19 грн |
10+ | 59.45 грн |
25+ | 56.43 грн |
100+ | 43.51 грн |
250+ | 40.67 грн |
500+ | 35.94 грн |
1000+ | 27.91 грн |
2EDF7275FXUMA1 |
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDG DSO16-11
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-11
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDG DSO16-11
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-11
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
DigiKey Programmable: Not Verified
товар відсутній
IPD95R2K0P7ATMA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 950V 4A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 400 V
Description: MOSFET N-CH 950V 4A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 400 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 34.05 грн |
IPD95R1K2P7ATMA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 950V 6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.7A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 478 pF @ 400 V
Description: MOSFET N-CH 950V 6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.7A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 478 pF @ 400 V
товар відсутній
IPD95R750P7ATMA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 950V 9A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 712 pF @ 400 V
Description: MOSFET N-CH 950V 9A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 712 pF @ 400 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 55.31 грн |
IPD95R450P7ATMA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 950V 14A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1053 pF @ 400 V
Description: MOSFET N-CH 950V 14A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1053 pF @ 400 V
товар відсутній
IPU95R3K7P7AKMA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 950V 2A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 800mA, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO251-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 400 V
Description: MOSFET N-CH 950V 2A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 800mA, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO251-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 400 V
на замовлення 797 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 71.47 грн |
10+ | 56.23 грн |
100+ | 43.72 грн |
500+ | 34.78 грн |
IPU95R2K0P7AKMA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 950V 4A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO251-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 400 V
Description: MOSFET N-CH 950V 4A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO251-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 400 V
товар відсутній
IPU95R1K2P7AKMA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 950V 6A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.7A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Supplier Device Package: PG-TO251-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 478 pF @ 400 V
Description: MOSFET N-CH 950V 6A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.7A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Supplier Device Package: PG-TO251-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 478 pF @ 400 V
на замовлення 1468 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 106.44 грн |
10+ | 84.05 грн |
100+ | 65.37 грн |
500+ | 52 грн |
IPU95R750P7AKMA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 950V 9A TO251-3
Description: MOSFET N-CH 950V 9A TO251-3
товар відсутній
IPN95R3K7P7ATMA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 950V 2A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 800mA, 10V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 400 V
Description: MOSFET N-CH 950V 2A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 800mA, 10V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 400 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 23.47 грн |
6000+ | 20.94 грн |
IPN95R2K0P7ATMA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 950V 4A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.7A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 400 V
Description: MOSFET N-CH 950V 4A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.7A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 400 V
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 28.82 грн |
6000+ | 26.44 грн |
9000+ | 25.22 грн |
IPD95R2K0P7ATMA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 950V 4A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 400 V
Description: MOSFET N-CH 950V 4A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 400 V
на замовлення 3020 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 123.17 грн |
10+ | 75.41 грн |
100+ | 50.6 грн |
500+ | 37.48 грн |
1000+ | 34.26 грн |
IPD95R1K2P7ATMA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 950V 6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.7A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 478 pF @ 400 V
Description: MOSFET N-CH 950V 6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.7A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 478 pF @ 400 V
товар відсутній
IPD95R750P7ATMA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 950V 9A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 712 pF @ 400 V
Description: MOSFET N-CH 950V 9A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 712 pF @ 400 V
на замовлення 3738 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 122.41 грн |
10+ | 98.11 грн |
100+ | 78.08 грн |
500+ | 62 грн |
1000+ | 52.61 грн |
IPD95R450P7ATMA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 950V 14A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1053 pF @ 400 V
Description: MOSFET N-CH 950V 14A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1053 pF @ 400 V
на замовлення 285 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 227.33 грн |
10+ | 142.62 грн |
100+ | 99.01 грн |
IPN95R3K7P7ATMA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 950V 2A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 800mA, 10V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 400 V
Description: MOSFET N-CH 950V 2A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 800mA, 10V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 400 V
на замовлення 8221 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 91.24 грн |
10+ | 55.13 грн |
100+ | 36.5 грн |
500+ | 26.73 грн |
1000+ | 24.3 грн |
IPN95R2K0P7ATMA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 950V 4A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.7A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 400 V
Description: MOSFET N-CH 950V 4A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.7A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 400 V
на замовлення 23531 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 69.19 грн |
10+ | 54.91 грн |
100+ | 42.71 грн |
500+ | 33.97 грн |
1000+ | 27.67 грн |
EVALM3102TTOBO1 |
Виробник: Infineon Technologies
Description: IMOTION IMC102T-F064 IMOTION
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: IMC102
Supplied Contents: Board(s)
Part Status: Obsolete
Description: IMOTION IMC102T-F064 IMOTION
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: IMC102
Supplied Contents: Board(s)
Part Status: Obsolete
товар відсутній
IPB65R045C7ATMA2 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 46A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.25mA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
Description: MOSFET N-CH 650V 46A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.25mA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
товар відсутній
IPB65R065C7ATMA2 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 33A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 17.1A, 10V
Power Dissipation (Max): 171W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 400 V
Description: MOSFET N-CH 650V 33A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 17.1A, 10V
Power Dissipation (Max): 171W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 400 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1000+ | 298.38 грн |
IPB65R095C7ATMA2 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 24A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 11.8A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V
Description: MOSFET N-CH 650V 24A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 11.8A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1000+ | 214.94 грн |
2000+ | 194.9 грн |
IPB65R125C7ATMA2 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 18A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.9A, 10V
Power Dissipation (Max): 101W (Tc)
Vgs(th) (Max) @ Id: 4V @ 440µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 400 V
Description: MOSFET N-CH 650V 18A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.9A, 10V
Power Dissipation (Max): 101W (Tc)
Vgs(th) (Max) @ Id: 4V @ 440µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 400 V
товар відсутній
IPB65R190C7ATMA2 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 13A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 5.7A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 290µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 400 V
Description: MOSFET N-CH 650V 13A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 5.7A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 290µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 400 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1000+ | 83.14 грн |
IPB65R225C7ATMA2 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 11A TO-263-3
Description: MOSFET N-CH 650V 11A TO-263-3
товар відсутній
IPB65R045C7ATMA2 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 46A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.25mA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
Description: MOSFET N-CH 650V 46A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.25mA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
на замовлення 778 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 799.84 грн |
10+ | 660.54 грн |
100+ | 550.44 грн |
500+ | 455.8 грн |
IPB65R065C7ATMA2 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 33A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 17.1A, 10V
Power Dissipation (Max): 171W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 400 V
Description: MOSFET N-CH 650V 33A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 17.1A, 10V
Power Dissipation (Max): 171W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 400 V
на замовлення 5062 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 403.72 грн |
10+ | 332.98 грн |
100+ | 287.33 грн |
IPB65R095C7ATMA2 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 24A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 11.8A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V
Description: MOSFET N-CH 650V 24A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 11.8A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V
на замовлення 3189 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 415.89 грн |
10+ | 336.13 грн |
100+ | 271.95 грн |
500+ | 226.86 грн |
IPB65R190C7ATMA2 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 13A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 5.7A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 290µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 400 V
Description: MOSFET N-CH 650V 13A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 5.7A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 290µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 400 V
на замовлення 1615 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 139.14 грн |
10+ | 111.43 грн |
100+ | 88.67 грн |
500+ | 75.13 грн |
CG7497AAT |
Виробник: Infineon Technologies
Description: IC MCU CAPSENSE
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC MCU CAPSENSE
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
MB90F394HPMT-GS-N2E1 |
Виробник: Infineon Technologies
Description: IC MCU 16BIT 384KB FLASH 120LQFP
Packaging: Bulk
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 10K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 15x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, LINbus, SCI, Serial I/O, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Number of I/O: 96
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 384KB FLASH 120LQFP
Packaging: Bulk
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 10K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 15x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, LINbus, SCI, Serial I/O, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Number of I/O: 96
DigiKey Programmable: Not Verified
товар відсутній
MB91195ABGL-G-258-K8ERE1 |
Виробник: Infineon Technologies
Description: IC MICROCONTROLLER
Packaging: Bulk
DigiKey Programmable: Not Verified
Description: IC MICROCONTROLLER
Packaging: Bulk
DigiKey Programmable: Not Verified
товар відсутній
V29F010B-120PC |
Виробник: Infineon Technologies
Description: IC MEMORY NOR
Packaging: Bulk
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC MEMORY NOR
Packaging: Bulk
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
V29F400BT-150SC |
Виробник: Infineon Technologies
Description: IC MEMORY NOR
Packaging: Bulk
DigiKey Programmable: Not Verified
Description: IC MEMORY NOR
Packaging: Bulk
DigiKey Programmable: Not Verified
товар відсутній
CG7497AA |
Виробник: Infineon Technologies
Description: IC MCU CAPSENSE
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC MCU CAPSENSE
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
TLE9262BQXXUMA1 |
Виробник: Infineon Technologies
Description: IC INTERFACE SPECIALIZED 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Voltage - Supply: 28V
Supplier Device Package: PG-VQFN-48-31
Part Status: Not For New Designs
Grade: Automotive
Description: IC INTERFACE SPECIALIZED 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Voltage - Supply: 28V
Supplier Device Package: PG-VQFN-48-31
Part Status: Not For New Designs
Grade: Automotive
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 283.59 грн |
10+ | 245.05 грн |
25+ | 231.65 грн |
100+ | 188.41 грн |
250+ | 178.75 грн |
500+ | 160.39 грн |
1000+ | 133.05 грн |
TLE9262BQXV33XUMA1 |
Виробник: Infineon Technologies
Description: IC INTERFACE SPECIALIZED 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Voltage - Supply: 28V
Applications: Automotive
Supplier Device Package: PG-VQFN-48-31
Part Status: Not For New Designs
Description: IC INTERFACE SPECIALIZED 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Voltage - Supply: 28V
Applications: Automotive
Supplier Device Package: PG-VQFN-48-31
Part Status: Not For New Designs
на замовлення 2478 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 291.2 грн |
10+ | 252.08 грн |
25+ | 238.36 грн |
100+ | 193.85 грн |
250+ | 183.91 грн |
500+ | 165.02 грн |
1000+ | 136.89 грн |
TLE9263BQXV33XUMA1 |
Виробник: Infineon Technologies
Description: IC INTERFACE SPECIALIZED 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Voltage - Supply: 28V
Supplier Device Package: PG-VQFN-48-31
Part Status: Not For New Designs
Grade: Automotive
Description: IC INTERFACE SPECIALIZED 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Voltage - Supply: 28V
Supplier Device Package: PG-VQFN-48-31
Part Status: Not For New Designs
Grade: Automotive
на замовлення 4455 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 305.64 грн |
10+ | 264.08 грн |
25+ | 249.63 грн |
100+ | 203.03 грн |
250+ | 192.62 грн |
500+ | 172.83 грн |
1000+ | 143.37 грн |
BGS14MA11E6327XTSA1 |
Виробник: Infineon Technologies
Description: IC RF SWITCH SP4T 6GHZ ATSLP11-1
Packaging: Cut Tape (CT)
Package / Case: 11-UFLGA
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP4T
RF Type: LTE, W-CDMA
Operating Temperature: 125°C (TJ)
Voltage - Supply: 1.7V ~ 3.4V
Insertion Loss: 0.85dB
Frequency Range: 100MHz ~ 6GHz
Test Frequency: 6GHz
Isolation: 18dB
Supplier Device Package: PG-ATSLP-11-1
Part Status: Active
Description: IC RF SWITCH SP4T 6GHZ ATSLP11-1
Packaging: Cut Tape (CT)
Package / Case: 11-UFLGA
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP4T
RF Type: LTE, W-CDMA
Operating Temperature: 125°C (TJ)
Voltage - Supply: 1.7V ~ 3.4V
Insertion Loss: 0.85dB
Frequency Range: 100MHz ~ 6GHz
Test Frequency: 6GHz
Isolation: 18dB
Supplier Device Package: PG-ATSLP-11-1
Part Status: Active
товар відсутній
TLE4959CFXHAMA1 |
Виробник: Infineon Technologies
Description: SENSOR ROTARY PC PIN
Packaging: Cut Tape (CT)
Package / Case: 3-SIP Module
Mounting Type: Through Hole
Output: Analog Voltage, PWM
Operating Temperature: -40°C ~ 175°C (TJ)
Termination Style: PC Pin
Voltage - Supply: 4V ~ 16V
Actuator Type: External Magnet, Not Included
Technology: Hall Effect
For Measuring: Linear, Rotary Position
Supplier Device Package: PG-SSO-3-52
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: SENSOR ROTARY PC PIN
Packaging: Cut Tape (CT)
Package / Case: 3-SIP Module
Mounting Type: Through Hole
Output: Analog Voltage, PWM
Operating Temperature: -40°C ~ 175°C (TJ)
Termination Style: PC Pin
Voltage - Supply: 4V ~ 16V
Actuator Type: External Magnet, Not Included
Technology: Hall Effect
For Measuring: Linear, Rotary Position
Supplier Device Package: PG-SSO-3-52
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 180 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 390.8 грн |
10+ | 281.88 грн |
25+ | 250.57 грн |
50+ | 223.39 грн |
100+ | 217.51 грн |
TLE4959CHAMA1 |
Виробник: Infineon Technologies
Description: SENSOR ROTARY PC PIN
Packaging: Cut Tape (CT)
Package / Case: 3-SIP Module
Mounting Type: Through Hole
Output: Analog Voltage, PWM
Operating Temperature: -40°C ~ 175°C (TJ)
Termination Style: PC Pin
Voltage - Supply: 4V ~ 16V
Actuator Type: External Magnet, Not Included
Technology: Hall Effect
For Measuring: Linear, Rotary Position
Supplier Device Package: PG-SSO-3-52
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: SENSOR ROTARY PC PIN
Packaging: Cut Tape (CT)
Package / Case: 3-SIP Module
Mounting Type: Through Hole
Output: Analog Voltage, PWM
Operating Temperature: -40°C ~ 175°C (TJ)
Termination Style: PC Pin
Voltage - Supply: 4V ~ 16V
Actuator Type: External Magnet, Not Included
Technology: Hall Effect
For Measuring: Linear, Rotary Position
Supplier Device Package: PG-SSO-3-52
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 141 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 381.67 грн |
10+ | 275.65 грн |
25+ | 245.06 грн |
50+ | 218.48 грн |
100+ | 212.73 грн |
TLE5014C16XUMA1 |
Виробник: Infineon Technologies
Description: SENSOR ANGLE 360DEG GULL WING
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: SPC
Operating Temperature: -40°C ~ 125°C
Termination Style: Gull Wing
Voltage - Supply: 4.2V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle, Linear, Rotary
Supplier Device Package: PG-TDSO-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Cosine, Sine
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: SENSOR ANGLE 360DEG GULL WING
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: SPC
Operating Temperature: -40°C ~ 125°C
Termination Style: Gull Wing
Voltage - Supply: 4.2V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle, Linear, Rotary
Supplier Device Package: PG-TDSO-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Cosine, Sine
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 176 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 488.87 грн |
10+ | 352.89 грн |
25+ | 313.71 грн |
50+ | 279.66 грн |
100+ | 272.31 грн |
TLE5014P16XUMA1 |
Виробник: Infineon Technologies
Description: SENSOR ANGLE 360DEG GULL WING
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: PWM
Operating Temperature: -40°C ~ 125°C
Termination Style: Gull Wing
Voltage - Supply: 4.2V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle, Linear, Rotary
Supplier Device Package: PG-TDSO-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Cosine, Sine
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: SENSOR ANGLE 360DEG GULL WING
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: PWM
Operating Temperature: -40°C ~ 125°C
Termination Style: Gull Wing
Voltage - Supply: 4.2V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle, Linear, Rotary
Supplier Device Package: PG-TDSO-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Cosine, Sine
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 74 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 488.87 грн |
10+ | 352.89 грн |
25+ | 313.71 грн |
50+ | 279.66 грн |
TLE5014S16XUMA1 |
Виробник: Infineon Technologies
Description: SENSOR ANGLE 360DEG GULL WING
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: SENT
Operating Temperature: -40°C ~ 125°C
Termination Style: Gull Wing
Voltage - Supply: 4.2V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle, Linear, Rotary
Supplier Device Package: PG-TDSO-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Cosine, Sine
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: SENSOR ANGLE 360DEG GULL WING
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: SENT
Operating Temperature: -40°C ~ 125°C
Termination Style: Gull Wing
Voltage - Supply: 4.2V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle, Linear, Rotary
Supplier Device Package: PG-TDSO-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Cosine, Sine
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 181 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 488.87 грн |
10+ | 352.89 грн |
25+ | 313.71 грн |
50+ | 279.66 грн |
100+ | 272.31 грн |
TLE5014C16DXUMA1 |
Виробник: Infineon Technologies
Description: SENSOR ANGLE 360DEG GULL WING
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: SPC
Operating Temperature: -40°C ~ 125°C
Termination Style: Gull Wing
Voltage - Supply: 4.2V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle, Linear, Rotary
Supplier Device Package: PG-TDSO-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Cosine, Sine
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: SENSOR ANGLE 360DEG GULL WING
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: SPC
Operating Temperature: -40°C ~ 125°C
Termination Style: Gull Wing
Voltage - Supply: 4.2V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle, Linear, Rotary
Supplier Device Package: PG-TDSO-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Cosine, Sine
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 153 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 515.48 грн |
10+ | 396.97 грн |
25+ | 367.16 грн |
100+ | 327.91 грн |
TLE5014S16DXUMA1 |
Виробник: Infineon Technologies
Description: SENSOR ANGLE 360DEG GULL WING
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: SENT
Operating Temperature: -40°C ~ 125°C
Termination Style: Gull Wing
Voltage - Supply: 4.2V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle, Linear, Rotary
Supplier Device Package: PG-TDSO-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Cosine, Sine
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: SENSOR ANGLE 360DEG GULL WING
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: SENT
Operating Temperature: -40°C ~ 125°C
Termination Style: Gull Wing
Voltage - Supply: 4.2V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle, Linear, Rotary
Supplier Device Package: PG-TDSO-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Cosine, Sine
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 282 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 732.93 грн |
10+ | 564.63 грн |
25+ | 522.28 грн |
100+ | 423.91 грн |
IFX007TAUMA1 |
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRVR 55A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 8V ~ 40V
Rds On (Typ): 4.7mOhm LS, 5.3mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 55A
Technology: Power MOSFET
Voltage - Load: 8V ~ 40V
Supplier Device Package: PG-TO263-7-1
Fault Protection: Current Limiting, Open Load Detect, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Active
Description: IC HALF BRIDGE DRVR 55A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 8V ~ 40V
Rds On (Typ): 4.7mOhm LS, 5.3mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 55A
Technology: Power MOSFET
Voltage - Load: 8V ~ 40V
Supplier Device Package: PG-TO263-7-1
Fault Protection: Current Limiting, Open Load Detect, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Active
товар відсутній
IRFR3710ZTRLPBF |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 42A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 33A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 25 V
Description: MOSFET N-CH 100V 42A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 33A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 25 V
на замовлення 9916 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 111 грн |
10+ | 89.18 грн |
100+ | 70.97 грн |
500+ | 56.36 грн |
1000+ | 47.82 грн |
MB95F574KNPF-G-SNE2 |
Виробник: Infineon Technologies
Description: IC MCU 8BIT 20KB FLASH 8SOP
Packaging: Tube
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 496 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 2x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: LINbus, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 8-SOP
Number of I/O: 5
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 20KB FLASH 8SOP
Packaging: Tube
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 496 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 2x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: LINbus, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 8-SOP
Number of I/O: 5
DigiKey Programmable: Not Verified
на замовлення 4941 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 31.93 грн |
MB95F572KPF-G-SNE2 |
Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 8SOP
Packaging: Tube
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 240 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 2x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: LINbus, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 8-SOP
Number of I/O: 5
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 8KB FLASH 8SOP
Packaging: Tube
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 240 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 2x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: LINbus, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 8-SOP
Number of I/O: 5
DigiKey Programmable: Not Verified
на замовлення 100307 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 31.93 грн |