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TLE72792GV26XUMA1 TLE72792GV26XUMA1 Infineon Technologies Infineon-TLE7279_2-DS-v01_02-en.pdf?folderId=db3a304318f3fe290118f5a433570040&fileId=db3a30431be39b97011be54c333b00a0&ack=t Description: IC REG LDO 2.6V 0.18A 14DSO
товар відсутній
TLE7729TXUMA1 TLE7729TXUMA1 Infineon Technologies TLE7729_PB.pdf Description: IC INTERFACE SPECIALIZED 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Interface: SPI Serial
Voltage - Supply: 3.3V, 5V
Supplier Device Package: PG-TSSOP-28
Grade: Automotive
Part Status: Obsolete
товар відсутній
TLE8203EXUMA1 TLE8203EXUMA1 Infineon Technologies Infineon-TLE8203E-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a84d87c5b7568 Description: IC DRV MOTOR MIRROR PWR DSO-36
товар відсутній
TLE8366EV33XUMA1 TLE8366EV33XUMA1 Infineon Technologies Infineon-TLE8366-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc1015969d2def641fa Description: IC REG BUCK 3.3V 1.8A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1.8A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 370kHz
Voltage - Input (Max): 45V
Topology: Buck
Supplier Device Package: PG-DSO-8
Synchronous Rectifier: No
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
товар відсутній
TLE8366EV50XUMA1 TLE8366EV50XUMA1 Infineon Technologies Infineon-TLE8366-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc1015969d2def641fa Description: IC REG BUCK 5V 1.8A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1.8A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 370kHz
Voltage - Input (Max): 45V
Topology: Buck
Supplier Device Package: PG-DSO-8
Synchronous Rectifier: No
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+96.84 грн
Мінімальне замовлення: 2500
TLE8366EVXUMA1 TLE8366EVXUMA1 Infineon Technologies Infineon-TLE8366-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc1015969d2def641fa Description: IC REG BUCK ADJ 1.8A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1.8A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 370kHz
Voltage - Input (Max): 45V
Topology: Buck
Supplier Device Package: PG-DSO-8
Synchronous Rectifier: No
Voltage - Output (Max): 16V
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 0.6V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+98.8 грн
5000+ 91.57 грн
Мінімальне замовлення: 2500
TLE8444SLXUMA1 TLE8444SLXUMA1 Infineon Technologies Infineon-TLE8444SL-DS-v01_01-en.pdf?fileId=db3a30431ff98815012060afb566617a Description: IC MOTOR DRIVER BIPOLAR 24SSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 8V ~ 18V
Technology: BiCDMOS
Voltage - Load: 8V ~ 18V
Supplier Device Package: PG-SSOP-24-7
Motor Type - Stepper: Bipolar, Unipolar
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Part Status: Active
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
2500+131.05 грн
Мінімальне замовлення: 2500
TLE8458GXUMA1 TLE8458GXUMA1 Infineon Technologies Infineon-TLE8458-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a3d2da4b66071 Description: IC TRANSCEIVER FULL 1/1 DSO-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 7V ~ 27V
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: LINbus
Supplier Device Package: PG-DSO-8-16
Duplex: Full
Part Status: Not For New Designs
товар відсутній
TLI4906KHTSA1 TLI4906KHTSA1 Infineon Technologies TLI4906x_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a304320d39d590121543b7ddc05c4 Description: MAGNETIC SWITCH UNIPOL SC59
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 13.9mT Trip, 4.7mT Release
Current - Output (Max): 20mA
Current - Supply (Max): 6mA
Supplier Device Package: PG-SC59-3
Test Condition: -40°C ~ 125°C
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+21.05 грн
Мінімальне замовлення: 3000
TLI49462KHTSA1 TLI49462KHTSA1 Infineon Technologies TLI4946xy_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a304320d39d590121543f7e4c05c8 Description: MAGNETIC SWITCH UNIPOLAR SC59
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 19.2mT Trip, -19.2mT Release
Current - Output (Max): 20mA
Current - Supply (Max): 6mA
Supplier Device Package: PG-SC59-3
Test Condition: -40°C ~ 125°C
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
TLI49462LHALA1 TLI49462LHALA1 Infineon Technologies TLI4946xy_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a304320d39d590121543f7e4c05c8 Description: MAGNETIC SWITCH UNIPOLAR SSO-3-2
товар відсутній
TLI4946KHTSA1 TLI4946KHTSA1 Infineon Technologies TLI4946xy_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a304320d39d590121543f7e4c05c8 Description: MAGNETIC SWITCH UNIPOLAR SC59
товар відсутній
TLV4906K TLV4906K Infineon Technologies TLV4906x_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a304320d39d590121544295e605cd Description: IC HALL EFFECT SW SC59-3
товар відсутній
TLV4906LHALA1 TLV4906LHALA1 Infineon Technologies dgdl?fileId=db3a30432ea425a4012ec42cfd2b550a Description: MAGNETIC SWITCH UNIPOLAR SSO-3-2
товар відсутній
TLV49462KFTSA1 TLV49462KFTSA1 Infineon Technologies TLV4946xy_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a304320d39d5901215443fca305d1 Description: IC HALL EFFECT LATCH SC59-3
товар відсутній
TLV49462LHALA1 TLV49462LHALA1 Infineon Technologies TLV4946xy_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a304320d39d5901215443fca305d1 Description: IC HALL EFFECT LATCH SSO-3-2
товар відсутній
TLV4946KFTSA1 TLV4946KFTSA1 Infineon Technologies TLV4946xy_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a304320d39d5901215443fca305d1 Description: IC HALL EFFECT LATCH SC59-3
товар відсутній
IPB020NE7N3GATMA1 IPB020NE7N3GATMA1 Infineon Technologies IPB020NE7N3_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304320d39d590121e31c838554d3 Description: MOSFET N-CH 75V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 273µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 37.5 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
1000+237.07 грн
2000+ 214.96 грн
Мінімальне замовлення: 1000
BSC042NE7NS3GATMA1 BSC042NE7NS3GATMA1 Infineon Technologies BSC042NE7NS3G_Rev2.21.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304320d39d590121a5f8baf30c25 Description: MOSFET N-CH 75V 19A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 91µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 37.5 V
на замовлення 33044 шт:
термін постачання 21-31 дні (днів)
2+210.6 грн
10+ 168.49 грн
100+ 134.13 грн
500+ 106.51 грн
1000+ 90.37 грн
2000+ 85.85 грн
Мінімальне замовлення: 2
BSC077N12NS3 G BSC077N12NS3 G Infineon Technologies BSC077N12NS3++Rev2.5.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122a7b3afe37d39 Description: MOSFET N-CH 120V 98A 8TDSON
на замовлення 34970 шт:
термін постачання 21-31 дні (днів)
BSC100N10NSFGATMA1 BSC100N10NSFGATMA1 Infineon Technologies BSC100N10NSF+Rev2.06.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431b3e89eb011b49a75b607b57 Description: MOSFET N-CH 100V 11.4/90A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 50 V
на замовлення 16136 шт:
термін постачання 21-31 дні (днів)
3+149.56 грн
10+ 119.7 грн
100+ 95.27 грн
500+ 75.65 грн
1000+ 64.19 грн
2000+ 60.98 грн
Мінімальне замовлення: 3
BSC190N12NS3GATMA1 BSC190N12NS3GATMA1 Infineon Technologies BSC190N12NS3+Rev2.5.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122a7bb1e767d49 Description: MOSFET N-CH 120V 8.6A/44A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 39A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 42µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 60 V
на замовлення 21132 шт:
термін постачання 21-31 дні (днів)
4+98.43 грн
10+ 77.67 грн
100+ 60.36 грн
500+ 48.01 грн
1000+ 39.11 грн
2000+ 36.82 грн
Мінімальне замовлення: 4
BSC320N20NS3GATMA1 BSC320N20NS3GATMA1 Infineon Technologies BSC320N20NS3+G+Rev2.2.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f17012495e37b301571 Description: MOSFET N-CH 200V 36A TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 36A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
на замовлення 20348 шт:
термін постачання 21-31 дні (днів)
2+215.18 грн
10+ 173.48 грн
100+ 140.34 грн
500+ 117.07 грн
1000+ 100.24 грн
2000+ 94.39 грн
Мінімальне замовлення: 2
BSC520N15NS3GATMA1 BSC520N15NS3GATMA1 Infineon Technologies BSC520N15NS3+Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122eee57d9b21a4 Description: MOSFET N-CH 150V 21A TDSON-8-5
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 18A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 75 V
на замовлення 8369 шт:
термін постачання 21-31 дні (днів)
4+79.36 грн
10+ 62.09 грн
100+ 48.28 грн
500+ 38.4 грн
1000+ 31.28 грн
2000+ 29.45 грн
Мінімальне замовлення: 4
BSC600N25NS3GATMA1 BSC600N25NS3GATMA1 Infineon Technologies BSC600N25NS3+G+Rev2.3.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f17012496ab13871948 Description: MOSFET N-CH 250V 25A TDSON-8-1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
на замовлення 7636 шт:
термін постачання 21-31 дні (днів)
2+237.31 грн
10+ 191.93 грн
100+ 155.24 грн
500+ 129.49 грн
1000+ 110.88 грн
2000+ 104.41 грн
Мінімальне замовлення: 2
BSZ520N15NS3GATMA1 BSZ520N15NS3GATMA1 Infineon Technologies BSZ520N15NS3+Rev2.2.pdf?folderId=db3a304326623792012669f6bee2224b&fileId=db3a30432662379201266a0dd612226c Description: MOSFET N-CH 150V 21A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 18A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 75 V
на замовлення 14325 шт:
термін постачання 21-31 дні (днів)
3+115.22 грн
10+ 90.89 грн
100+ 70.72 грн
500+ 56.25 грн
1000+ 45.82 грн
2000+ 43.14 грн
Мінімальне замовлення: 3
IPB017N06N3GATMA1 IPB017N06N3GATMA1 Infineon Technologies IPB017N06N3_Rev2.0.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a30431ddc9372011e264a7ab746ea Description: MOSFET N-CH 60V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 196µA
Supplier Device Package: PG-TO263-7
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 30 V
на замовлення 1697 шт:
термін постачання 21-31 дні (днів)
2+248.75 грн
10+ 201.33 грн
100+ 162.87 грн
500+ 135.87 грн
Мінімальне замовлення: 2
IPB034N06N3GATMA1 IPB034N06N3GATMA1 Infineon Technologies IPB034N06N3_G.pdf Description: MOSFET N-CH 60V 100A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 93µA
Supplier Device Package: PG-TO263-7
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
товар відсутній
IPB036N12N3 G IPB036N12N3 G Infineon Technologies IPB036N12N3+G_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304323b87bc20123c7030ed51f56 Description: MOSFET N-CH 120V 180A TO263-7
на замовлення 5518 шт:
термін постачання 21-31 дні (днів)
IPB038N12N3GATMA1 IPB038N12N3GATMA1 Infineon Technologies IPP_I_B041N12N3_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122a75b86467ca4 Description: MOSFET N-CH 120V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 60 V
на замовлення 2360 шт:
термін постачання 21-31 дні (днів)
1+434.17 грн
10+ 357.99 грн
100+ 298.32 грн
500+ 247.03 грн
IPB039N10N3GATMA1 IPB039N10N3GATMA1 Infineon Technologies IPB039N10N3+G_Rev2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431ce5fb52011d1ed1fd3915e0 Description: MOSFET N-CH 100V 160A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 160µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V
на замовлення 29674 шт:
термін постачання 21-31 дні (днів)
2+200.68 грн
10+ 162.02 грн
100+ 131.11 грн
500+ 109.38 грн
Мінімальне замовлення: 2
IPB107N20N3GATMA1 IPB107N20N3GATMA1 Infineon Technologies IPP_I_110N20N3+G_IPB107N20N3+G+Rev2.2.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f170124968e7d1f18e7 Description: MOSFET N-CH 200V 88A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 88A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7100 pF @ 100 V
на замовлення 5527 шт:
термін постачання 21-31 дні (днів)
1+553.97 грн
10+ 457.18 грн
100+ 381.01 грн
500+ 315.5 грн
IPB123N10N3GATMA1 IPB123N10N3GATMA1 Infineon Technologies Infineon-IPB123N10N3+G-DS-v02_03-EN.pdf?fileId=5546d4624fb7fef2014ffe55aac64b6e Description: MOSFET N-CH 100V 58A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 46A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 46µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
на замовлення 5510 шт:
термін постачання 21-31 дні (днів)
3+142.69 грн
10+ 114.41 грн
100+ 91.06 грн
500+ 72.31 грн
Мінімальне замовлення: 3
IPB200N15N3 G IPB200N15N3 G Infineon Technologies IPD200N15N3_Rev2.02.pdf?folderId=db3a304313b8b5a60113cee7c66a02d6&fileId=db3a304319c6f18c0119cd1cc23279be Description: MOSFET N-CH 150V 50A TO263-3
на замовлення 4367 шт:
термін постачання 21-31 дні (днів)
IPB200N25N3GATMA1 IPB200N25N3GATMA1 Infineon Technologies IPP_B_I_200N25N3+G+Rev2.2.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f17012496b87e9f1971 Description: MOSFET N-CH 250V 64A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 64A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7100 pF @ 100 V
на замовлення 2331 шт:
термін постачання 21-31 дні (днів)
1+555.5 грн
10+ 458.8 грн
100+ 382.31 грн
500+ 316.57 грн
IPB320N20N3GATMA1 IPB320N20N3GATMA1 Infineon Technologies IPP_B_I_320N20N3+G+Rev2.2.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f170124967064ba184a Description: MOSFET N-CH 200V 34A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 34A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
на замовлення 6764 шт:
термін постачання 21-31 дні (днів)
2+247.23 грн
10+ 199.86 грн
100+ 161.67 грн
500+ 134.87 грн
Мінімальне замовлення: 2
IPB600N25N3GATMA1 IPB600N25N3GATMA1 Infineon Technologies IPP_B_600N25N3+G+Rev2.3.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f17012496c9548d199c Description: MOSFET N-CH 250V 25A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
на замовлення 4709 шт:
термін постачання 21-31 дні (днів)
2+215.94 грн
10+ 175.1 грн
100+ 141.65 грн
500+ 118.16 грн
Мінімальне замовлення: 2
IPB60R099CPATMA1 IPB60R099CPATMA1 Infineon Technologies IPB60R099CP_rev2.0.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42ded51491b Description: MOSFET N-CH 600V 31A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO263-3-2
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
на замовлення 3008 шт:
термін постачання 21-31 дні (днів)
1+574.57 грн
10+ 474.67 грн
100+ 395.58 грн
500+ 327.56 грн
IPB60R280C6ATMA1 IPB60R280C6ATMA1 Infineon Technologies IPB60R280C6_2_1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a30432313ff5e0123a4413ff0274a Description: MOSFET N-CH 600V 13.8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 430µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
товар відсутній
IPB60R600CPATMA1 IPB60R600CPATMA1 Infineon Technologies IPB60R600CP_rev2.0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043183a95550118792f22ec0462 Description: MOSFET N-CH 600V 6.1A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 100 V
товар відсутній
IPD110N12N3GBUMA1 IPD110N12N3GBUMA1 Infineon Technologies IPD_S110N12N3_G.pdf Description: MOSFET N-CH 120V 75A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 75A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 83µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4310 pF @ 60 V
товар відсутній
IPD320N20N3GBTMA1 IPD320N20N3GBTMA1 Infineon Technologies Infineon-IPD320N20N3+G-DS-v02_03-en.pdf?fileId=db3a3043243b5f1701249669796017f3 Description: MOSFET N-CH 200V 34A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 34A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
товар відсутній
IPD600N25N3GBTMA1 IPD600N25N3GBTMA1 Infineon Technologies Infineon-IPD600N25N3G_-DS-v02_03-en.pdf?fileId=db3a3043243b5f17012496b03c67195b Description: MOSFET N-CH 250V 25A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
товар відсутній
BSC077N12NS3 G BSC077N12NS3 G Infineon Technologies BSC077N12NS3++Rev2.5.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122a7b3afe37d39 Description: MOSFET N-CH 120V 98A 8TDSON
на замовлення 34970 шт:
термін постачання 21-31 дні (днів)
IPB036N12N3 G IPB036N12N3 G Infineon Technologies IPB036N12N3+G_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304323b87bc20123c7030ed51f56 Description: MOSFET N-CH 120V 180A TO263-7
на замовлення 5518 шт:
термін постачання 21-31 дні (днів)
IPB200N15N3 G IPB200N15N3 G Infineon Technologies IPD200N15N3_Rev2.02.pdf?folderId=db3a304313b8b5a60113cee7c66a02d6&fileId=db3a304319c6f18c0119cd1cc23279be Description: MOSFET N-CH 150V 50A TO263-3
на замовлення 4367 шт:
термін постачання 21-31 дні (днів)
IR11672ASPBF IR11672ASPBF Infineon Technologies ir11672aspbf.pdf?fileId=5546d462533600a4015355c455561653 Description: IC MOSFET DRIVER 200V 8-SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Voltage - Input: 200V
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 11.4V ~ 18V
Applications: Secondary-Side Controller
Supplier Device Package: 8-SOIC
Part Status: Discontinued at Digi-Key
Current - Supply: 50 mA
DigiKey Programmable: Not Verified
товар відсутній
IR11682STRPBF IR11682STRPBF Infineon Technologies ir11682spbf.pdf?fileId=5546d462533600a4015355c47188165a Description: IC SECONDARY SIDE CTRLR 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 8.6V ~ 18V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-SOIC
Part Status: Active
Current - Supply: 48 mA
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+114.7 грн
Мінімальне замовлення: 2500
IR1168SPBF IR1168SPBF Infineon Technologies ir1168.pdf?fileId=5546d462533600a4015355c467fa1658 Description: IC SECONDARY SIDE CTRLR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 8.6V ~ 18V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-SOIC
Part Status: Discontinued at Digi-Key
Current - Supply: 48 mA
DigiKey Programmable: Not Verified
товар відсутній
IR2521DSTRPBF IR2521DSTRPBF Infineon Technologies Part_Number_Guide_Web.pdf Description: IC BALLAST CTLR ADAPTIVE 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
товар відсутній
IR3411SPBF IR3411SPBF Infineon Technologies Part_Number_Guide_Web.pdf Description: IC SWITCH HIGH SIDE D2PAK-5
Packaging: Tube
товар відсутній
IR3503MTRPBF IR3503MTRPBF Infineon Technologies IR3503.pdf Description: IC CTRL XPHASE VR11.0/1 32-MLPQ
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 100°C
Voltage - Supply: 4.75V ~ 7.5V
Applications: Processor
Current - Supply: 8mA
Supplier Device Package: 32-MLPQ (5x5)
Part Status: Obsolete
товар відсутній
IR3640MPBF IR3640MPBF Infineon Technologies IR3640MPBF.pdf Description: IC REG CTRLR BUCK 20MLPQ
Packaging: Tube
Package / Case: 20-VFQFN Exposed Pad
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.65MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Supplier Device Package: 20-MLPQ (3x4)
Synchronous Rectifier: Yes
Control Features: Current Limit, Enable, Frequency Control, Power Good, Sequencing, Soft Start
Output Phases: 1
Duty Cycle (Max): 92%
Clock Sync: Yes
Number of Outputs: 1
товар відсутній
IR3725MTRPBF IR3725MTRPBF Infineon Technologies IR3725.pdf Description: IC PWR MONITOR INPUT 12-DFN
Packaging: Tape & Reel (TR)
Package / Case: 12-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C
Voltage - Supply: 3.135V ~ 3.465V
Applications: Power Supply Monitor
Supplier Device Package: 12-DFN (4x3)
Part Status: Obsolete
Current - Supply: 700 µA
DigiKey Programmable: Not Verified
товар відсутній
IR3832WMTR1PBF IR3832WMTR1PBF Infineon Technologies ir3832wm.pdf?fileId=5546d462533600a4015355d1eb5817c7 Description: IC REG CONV DDR 1OUT PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Voltage - Output: 0.6V ~ 14.4V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 1.5V ~ 16V
Operating Temperature: -40°C ~ 125°C
Applications: Converter, DDR
Supplier Device Package: PQFN (5x6)
товар відсутній
IR3840AMTR1PBF IR3840AMTR1PBF Infineon Technologies ir3840am.pdf?fileId=5546d462533600a4015355d20aff17cf Description: IC REG BUCK ADJ 14A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 14A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14.4V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.9V
товар відсутній
IR3840WMTR1PBF IR3840WMTR1PBF Infineon Technologies ir3840wm.pdf?fileId=5546d462533600a4015355d21b6217d3 Description: IC REG BUCK ADJ 12A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 12A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.65MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14.4V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.7V
товар відсутній
IR3841WMTR1PBF IR3841WMTR1PBF Infineon Technologies ir3841wm.pdf?fileId=5546d462533600a4015355d22bdc17d7 Description: IC REG BUCK ADJ 8A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 8A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.65MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14.4V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.7V
товар відсутній
IR3842AMTR1PBF IR3842AMTR1PBF Infineon Technologies ir3842am.pdf?fileId=5546d462533600a4015355d2321b17d9 Description: IC REG BUCK ADJ 6A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 6A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.32MHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 18.9V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.7V
Part Status: Obsolete
товар відсутній
IR3842WMTR1PBF IR3842WMTR1PBF Infineon Technologies ir3842wm.pdf?fileId=5546d462533600a4015355d54e8f17e8 Description: IC REG BUCK ADJ 4A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 4A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.65MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14.4V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.7V
товар відсутній
TLE72792GV26XUMA1 Infineon-TLE7279_2-DS-v01_02-en.pdf?folderId=db3a304318f3fe290118f5a433570040&fileId=db3a30431be39b97011be54c333b00a0&ack=t
TLE72792GV26XUMA1
Виробник: Infineon Technologies
Description: IC REG LDO 2.6V 0.18A 14DSO
товар відсутній
TLE7729TXUMA1 TLE7729_PB.pdf
TLE7729TXUMA1
Виробник: Infineon Technologies
Description: IC INTERFACE SPECIALIZED 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Interface: SPI Serial
Voltage - Supply: 3.3V, 5V
Supplier Device Package: PG-TSSOP-28
Grade: Automotive
Part Status: Obsolete
товар відсутній
TLE8203EXUMA1 Infineon-TLE8203E-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a84d87c5b7568
TLE8203EXUMA1
Виробник: Infineon Technologies
Description: IC DRV MOTOR MIRROR PWR DSO-36
товар відсутній
TLE8366EV33XUMA1 Infineon-TLE8366-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc1015969d2def641fa
TLE8366EV33XUMA1
Виробник: Infineon Technologies
Description: IC REG BUCK 3.3V 1.8A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1.8A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 370kHz
Voltage - Input (Max): 45V
Topology: Buck
Supplier Device Package: PG-DSO-8
Synchronous Rectifier: No
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
товар відсутній
TLE8366EV50XUMA1 Infineon-TLE8366-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc1015969d2def641fa
TLE8366EV50XUMA1
Виробник: Infineon Technologies
Description: IC REG BUCK 5V 1.8A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1.8A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 370kHz
Voltage - Input (Max): 45V
Topology: Buck
Supplier Device Package: PG-DSO-8
Synchronous Rectifier: No
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+96.84 грн
Мінімальне замовлення: 2500
TLE8366EVXUMA1 Infineon-TLE8366-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc1015969d2def641fa
TLE8366EVXUMA1
Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 1.8A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1.8A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 370kHz
Voltage - Input (Max): 45V
Topology: Buck
Supplier Device Package: PG-DSO-8
Synchronous Rectifier: No
Voltage - Output (Max): 16V
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 0.6V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+98.8 грн
5000+ 91.57 грн
Мінімальне замовлення: 2500
TLE8444SLXUMA1 Infineon-TLE8444SL-DS-v01_01-en.pdf?fileId=db3a30431ff98815012060afb566617a
TLE8444SLXUMA1
Виробник: Infineon Technologies
Description: IC MOTOR DRIVER BIPOLAR 24SSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 8V ~ 18V
Technology: BiCDMOS
Voltage - Load: 8V ~ 18V
Supplier Device Package: PG-SSOP-24-7
Motor Type - Stepper: Bipolar, Unipolar
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Part Status: Active
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+131.05 грн
Мінімальне замовлення: 2500
TLE8458GXUMA1 Infineon-TLE8458-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a3d2da4b66071
TLE8458GXUMA1
Виробник: Infineon Technologies
Description: IC TRANSCEIVER FULL 1/1 DSO-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 7V ~ 27V
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: LINbus
Supplier Device Package: PG-DSO-8-16
Duplex: Full
Part Status: Not For New Designs
товар відсутній
TLI4906KHTSA1 TLI4906x_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a304320d39d590121543b7ddc05c4
TLI4906KHTSA1
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH UNIPOL SC59
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 13.9mT Trip, 4.7mT Release
Current - Output (Max): 20mA
Current - Supply (Max): 6mA
Supplier Device Package: PG-SC59-3
Test Condition: -40°C ~ 125°C
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+21.05 грн
Мінімальне замовлення: 3000
TLI49462KHTSA1 TLI4946xy_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a304320d39d590121543f7e4c05c8
TLI49462KHTSA1
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH UNIPOLAR SC59
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 19.2mT Trip, -19.2mT Release
Current - Output (Max): 20mA
Current - Supply (Max): 6mA
Supplier Device Package: PG-SC59-3
Test Condition: -40°C ~ 125°C
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
TLI49462LHALA1 TLI4946xy_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a304320d39d590121543f7e4c05c8
TLI49462LHALA1
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH UNIPOLAR SSO-3-2
товар відсутній
TLI4946KHTSA1 TLI4946xy_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a304320d39d590121543f7e4c05c8
TLI4946KHTSA1
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH UNIPOLAR SC59
товар відсутній
TLV4906K TLV4906x_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a304320d39d590121544295e605cd
TLV4906K
Виробник: Infineon Technologies
Description: IC HALL EFFECT SW SC59-3
товар відсутній
TLV4906LHALA1 dgdl?fileId=db3a30432ea425a4012ec42cfd2b550a
TLV4906LHALA1
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH UNIPOLAR SSO-3-2
товар відсутній
TLV49462KFTSA1 TLV4946xy_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a304320d39d5901215443fca305d1
TLV49462KFTSA1
Виробник: Infineon Technologies
Description: IC HALL EFFECT LATCH SC59-3
товар відсутній
TLV49462LHALA1 TLV4946xy_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a304320d39d5901215443fca305d1
TLV49462LHALA1
Виробник: Infineon Technologies
Description: IC HALL EFFECT LATCH SSO-3-2
товар відсутній
TLV4946KFTSA1 TLV4946xy_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a304320d39d5901215443fca305d1
TLV4946KFTSA1
Виробник: Infineon Technologies
Description: IC HALL EFFECT LATCH SC59-3
товар відсутній
IPB020NE7N3GATMA1 IPB020NE7N3_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304320d39d590121e31c838554d3
IPB020NE7N3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 273µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 37.5 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1000+237.07 грн
2000+ 214.96 грн
Мінімальне замовлення: 1000
BSC042NE7NS3GATMA1 BSC042NE7NS3G_Rev2.21.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304320d39d590121a5f8baf30c25
BSC042NE7NS3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 19A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 91µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 37.5 V
на замовлення 33044 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+210.6 грн
10+ 168.49 грн
100+ 134.13 грн
500+ 106.51 грн
1000+ 90.37 грн
2000+ 85.85 грн
Мінімальне замовлення: 2
BSC077N12NS3 G BSC077N12NS3++Rev2.5.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122a7b3afe37d39
BSC077N12NS3 G
Виробник: Infineon Technologies
Description: MOSFET N-CH 120V 98A 8TDSON
на замовлення 34970 шт:
термін постачання 21-31 дні (днів)
BSC100N10NSFGATMA1 BSC100N10NSF+Rev2.06.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431b3e89eb011b49a75b607b57
BSC100N10NSFGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 11.4/90A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 50 V
на замовлення 16136 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+149.56 грн
10+ 119.7 грн
100+ 95.27 грн
500+ 75.65 грн
1000+ 64.19 грн
2000+ 60.98 грн
Мінімальне замовлення: 3
BSC190N12NS3GATMA1 BSC190N12NS3+Rev2.5.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122a7bb1e767d49
BSC190N12NS3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 120V 8.6A/44A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 39A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 42µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 60 V
на замовлення 21132 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+98.43 грн
10+ 77.67 грн
100+ 60.36 грн
500+ 48.01 грн
1000+ 39.11 грн
2000+ 36.82 грн
Мінімальне замовлення: 4
BSC320N20NS3GATMA1 BSC320N20NS3+G+Rev2.2.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f17012495e37b301571
BSC320N20NS3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 36A TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 36A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
на замовлення 20348 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+215.18 грн
10+ 173.48 грн
100+ 140.34 грн
500+ 117.07 грн
1000+ 100.24 грн
2000+ 94.39 грн
Мінімальне замовлення: 2
BSC520N15NS3GATMA1 BSC520N15NS3+Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122eee57d9b21a4
BSC520N15NS3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 21A TDSON-8-5
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 18A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 75 V
на замовлення 8369 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+79.36 грн
10+ 62.09 грн
100+ 48.28 грн
500+ 38.4 грн
1000+ 31.28 грн
2000+ 29.45 грн
Мінімальне замовлення: 4
BSC600N25NS3GATMA1 BSC600N25NS3+G+Rev2.3.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f17012496ab13871948
BSC600N25NS3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 250V 25A TDSON-8-1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
на замовлення 7636 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+237.31 грн
10+ 191.93 грн
100+ 155.24 грн
500+ 129.49 грн
1000+ 110.88 грн
2000+ 104.41 грн
Мінімальне замовлення: 2
BSZ520N15NS3GATMA1 BSZ520N15NS3+Rev2.2.pdf?folderId=db3a304326623792012669f6bee2224b&fileId=db3a30432662379201266a0dd612226c
BSZ520N15NS3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 21A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 18A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 75 V
на замовлення 14325 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+115.22 грн
10+ 90.89 грн
100+ 70.72 грн
500+ 56.25 грн
1000+ 45.82 грн
2000+ 43.14 грн
Мінімальне замовлення: 3
IPB017N06N3GATMA1 IPB017N06N3_Rev2.0.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a30431ddc9372011e264a7ab746ea
IPB017N06N3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 196µA
Supplier Device Package: PG-TO263-7
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 30 V
на замовлення 1697 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+248.75 грн
10+ 201.33 грн
100+ 162.87 грн
500+ 135.87 грн
Мінімальне замовлення: 2
IPB034N06N3GATMA1 IPB034N06N3_G.pdf
IPB034N06N3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 100A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 93µA
Supplier Device Package: PG-TO263-7
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
товар відсутній
IPB036N12N3 G IPB036N12N3+G_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304323b87bc20123c7030ed51f56
IPB036N12N3 G
Виробник: Infineon Technologies
Description: MOSFET N-CH 120V 180A TO263-7
на замовлення 5518 шт:
термін постачання 21-31 дні (днів)
IPB038N12N3GATMA1 IPP_I_B041N12N3_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122a75b86467ca4
IPB038N12N3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 120V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 60 V
на замовлення 2360 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+434.17 грн
10+ 357.99 грн
100+ 298.32 грн
500+ 247.03 грн
IPB039N10N3GATMA1 IPB039N10N3+G_Rev2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431ce5fb52011d1ed1fd3915e0
IPB039N10N3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 160A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 160µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V
на замовлення 29674 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+200.68 грн
10+ 162.02 грн
100+ 131.11 грн
500+ 109.38 грн
Мінімальне замовлення: 2
IPB107N20N3GATMA1 IPP_I_110N20N3+G_IPB107N20N3+G+Rev2.2.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f170124968e7d1f18e7
IPB107N20N3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 88A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 88A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7100 pF @ 100 V
на замовлення 5527 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+553.97 грн
10+ 457.18 грн
100+ 381.01 грн
500+ 315.5 грн
IPB123N10N3GATMA1 Infineon-IPB123N10N3+G-DS-v02_03-EN.pdf?fileId=5546d4624fb7fef2014ffe55aac64b6e
IPB123N10N3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 58A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 46A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 46µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
на замовлення 5510 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+142.69 грн
10+ 114.41 грн
100+ 91.06 грн
500+ 72.31 грн
Мінімальне замовлення: 3
IPB200N15N3 G IPD200N15N3_Rev2.02.pdf?folderId=db3a304313b8b5a60113cee7c66a02d6&fileId=db3a304319c6f18c0119cd1cc23279be
IPB200N15N3 G
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 50A TO263-3
на замовлення 4367 шт:
термін постачання 21-31 дні (днів)
IPB200N25N3GATMA1 IPP_B_I_200N25N3+G+Rev2.2.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f17012496b87e9f1971
IPB200N25N3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 250V 64A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 64A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7100 pF @ 100 V
на замовлення 2331 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+555.5 грн
10+ 458.8 грн
100+ 382.31 грн
500+ 316.57 грн
IPB320N20N3GATMA1 IPP_B_I_320N20N3+G+Rev2.2.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f170124967064ba184a
IPB320N20N3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 34A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 34A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
на замовлення 6764 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+247.23 грн
10+ 199.86 грн
100+ 161.67 грн
500+ 134.87 грн
Мінімальне замовлення: 2
IPB600N25N3GATMA1 IPP_B_600N25N3+G+Rev2.3.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f17012496c9548d199c
IPB600N25N3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 250V 25A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
на замовлення 4709 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+215.94 грн
10+ 175.1 грн
100+ 141.65 грн
500+ 118.16 грн
Мінімальне замовлення: 2
IPB60R099CPATMA1 IPB60R099CP_rev2.0.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42ded51491b
IPB60R099CPATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 31A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO263-3-2
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
на замовлення 3008 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+574.57 грн
10+ 474.67 грн
100+ 395.58 грн
500+ 327.56 грн
IPB60R280C6ATMA1 IPB60R280C6_2_1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a30432313ff5e0123a4413ff0274a
IPB60R280C6ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 13.8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 430µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
товар відсутній
IPB60R600CPATMA1 IPB60R600CP_rev2.0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043183a95550118792f22ec0462
IPB60R600CPATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 6.1A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 100 V
товар відсутній
IPD110N12N3GBUMA1 IPD_S110N12N3_G.pdf
IPD110N12N3GBUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 120V 75A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 75A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 83µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4310 pF @ 60 V
товар відсутній
IPD320N20N3GBTMA1 Infineon-IPD320N20N3+G-DS-v02_03-en.pdf?fileId=db3a3043243b5f1701249669796017f3
IPD320N20N3GBTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 34A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 34A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
товар відсутній
IPD600N25N3GBTMA1 Infineon-IPD600N25N3G_-DS-v02_03-en.pdf?fileId=db3a3043243b5f17012496b03c67195b
IPD600N25N3GBTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 250V 25A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
товар відсутній
BSC077N12NS3 G BSC077N12NS3++Rev2.5.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122a7b3afe37d39
BSC077N12NS3 G
Виробник: Infineon Technologies
Description: MOSFET N-CH 120V 98A 8TDSON
на замовлення 34970 шт:
термін постачання 21-31 дні (днів)
IPB036N12N3 G IPB036N12N3+G_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304323b87bc20123c7030ed51f56
IPB036N12N3 G
Виробник: Infineon Technologies
Description: MOSFET N-CH 120V 180A TO263-7
на замовлення 5518 шт:
термін постачання 21-31 дні (днів)
IPB200N15N3 G IPD200N15N3_Rev2.02.pdf?folderId=db3a304313b8b5a60113cee7c66a02d6&fileId=db3a304319c6f18c0119cd1cc23279be
IPB200N15N3 G
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 50A TO263-3
на замовлення 4367 шт:
термін постачання 21-31 дні (днів)
IR11672ASPBF ir11672aspbf.pdf?fileId=5546d462533600a4015355c455561653
IR11672ASPBF
Виробник: Infineon Technologies
Description: IC MOSFET DRIVER 200V 8-SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Voltage - Input: 200V
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 11.4V ~ 18V
Applications: Secondary-Side Controller
Supplier Device Package: 8-SOIC
Part Status: Discontinued at Digi-Key
Current - Supply: 50 mA
DigiKey Programmable: Not Verified
товар відсутній
IR11682STRPBF ir11682spbf.pdf?fileId=5546d462533600a4015355c47188165a
IR11682STRPBF
Виробник: Infineon Technologies
Description: IC SECONDARY SIDE CTRLR 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 8.6V ~ 18V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-SOIC
Part Status: Active
Current - Supply: 48 mA
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+114.7 грн
Мінімальне замовлення: 2500
IR1168SPBF ir1168.pdf?fileId=5546d462533600a4015355c467fa1658
IR1168SPBF
Виробник: Infineon Technologies
Description: IC SECONDARY SIDE CTRLR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 8.6V ~ 18V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-SOIC
Part Status: Discontinued at Digi-Key
Current - Supply: 48 mA
DigiKey Programmable: Not Verified
товар відсутній
IR2521DSTRPBF Part_Number_Guide_Web.pdf
IR2521DSTRPBF
Виробник: Infineon Technologies
Description: IC BALLAST CTLR ADAPTIVE 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
товар відсутній
IR3411SPBF Part_Number_Guide_Web.pdf
IR3411SPBF
Виробник: Infineon Technologies
Description: IC SWITCH HIGH SIDE D2PAK-5
Packaging: Tube
товар відсутній
IR3503MTRPBF IR3503.pdf
IR3503MTRPBF
Виробник: Infineon Technologies
Description: IC CTRL XPHASE VR11.0/1 32-MLPQ
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 100°C
Voltage - Supply: 4.75V ~ 7.5V
Applications: Processor
Current - Supply: 8mA
Supplier Device Package: 32-MLPQ (5x5)
Part Status: Obsolete
товар відсутній
IR3640MPBF IR3640MPBF.pdf
IR3640MPBF
Виробник: Infineon Technologies
Description: IC REG CTRLR BUCK 20MLPQ
Packaging: Tube
Package / Case: 20-VFQFN Exposed Pad
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.65MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Supplier Device Package: 20-MLPQ (3x4)
Synchronous Rectifier: Yes
Control Features: Current Limit, Enable, Frequency Control, Power Good, Sequencing, Soft Start
Output Phases: 1
Duty Cycle (Max): 92%
Clock Sync: Yes
Number of Outputs: 1
товар відсутній
IR3725MTRPBF IR3725.pdf
IR3725MTRPBF
Виробник: Infineon Technologies
Description: IC PWR MONITOR INPUT 12-DFN
Packaging: Tape & Reel (TR)
Package / Case: 12-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C
Voltage - Supply: 3.135V ~ 3.465V
Applications: Power Supply Monitor
Supplier Device Package: 12-DFN (4x3)
Part Status: Obsolete
Current - Supply: 700 µA
DigiKey Programmable: Not Verified
товар відсутній
IR3832WMTR1PBF ir3832wm.pdf?fileId=5546d462533600a4015355d1eb5817c7
IR3832WMTR1PBF
Виробник: Infineon Technologies
Description: IC REG CONV DDR 1OUT PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Voltage - Output: 0.6V ~ 14.4V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 1.5V ~ 16V
Operating Temperature: -40°C ~ 125°C
Applications: Converter, DDR
Supplier Device Package: PQFN (5x6)
товар відсутній
IR3840AMTR1PBF ir3840am.pdf?fileId=5546d462533600a4015355d20aff17cf
IR3840AMTR1PBF
Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 14A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 14A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14.4V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.9V
товар відсутній
IR3840WMTR1PBF ir3840wm.pdf?fileId=5546d462533600a4015355d21b6217d3
IR3840WMTR1PBF
Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 12A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 12A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.65MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14.4V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.7V
товар відсутній
IR3841WMTR1PBF ir3841wm.pdf?fileId=5546d462533600a4015355d22bdc17d7
IR3841WMTR1PBF
Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 8A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 8A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.65MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14.4V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.7V
товар відсутній
IR3842AMTR1PBF ir3842am.pdf?fileId=5546d462533600a4015355d2321b17d9
IR3842AMTR1PBF
Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 6A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 6A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.32MHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 18.9V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.7V
Part Status: Obsolete
товар відсутній
IR3842WMTR1PBF ir3842wm.pdf?fileId=5546d462533600a4015355d54e8f17e8
IR3842WMTR1PBF
Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 4A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 4A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.65MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14.4V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.7V
товар відсутній
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