Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (136442) > Сторінка 1181 з 2275
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XMC4800F100F2048AAXQMA1 | INFINEON TECHNOLOGIES |
 Category: Infineon Technologies microcontrollersDescription: IC: ARM microcontroller; PG-LQFP-100; 128kBSRAM,2MBFLASH; 3.3VDC Type of integrated circuit: ARM microcontroller Case: PG-LQFP-100 Memory: 128kB SRAM; 2MB FLASH Number of inputs/outputs: 75 Supply voltage: 3.3V DC Operating temperature: -40...85°C Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog Number of A/D channels: 18 Kind of architecture: Cortex M4 Family: XMC4800 кількість в упаковці: 2500 шт |
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XMC4800F100K1536AAXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-100; 128kBSRAM,1536kBFLASH Operating temperature: -40...125°C Family: XMC4800 Supply voltage: 3.3V DC Number of A/D channels: 18 Kind of architecture: Cortex M4 Memory: 128kB SRAM; 1.5MB FLASH Case: PG-LQFP-100 Type of integrated circuit: ARM microcontroller Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART Number of inputs/outputs: 75 Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog кількість в упаковці: 960 шт |
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XMC4800F100K2048AAXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-100; 128kBSRAM,2MBFLASH; 3.3VDC Type of integrated circuit: ARM microcontroller Case: PG-LQFP-100 Memory: 128kB SRAM; 2MB FLASH Number of inputs/outputs: 75 Supply voltage: 3.3V DC Operating temperature: -40...125°C Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog Number of A/D channels: 18 Kind of architecture: Cortex M4 Family: XMC4800 кількість в упаковці: 2500 шт |
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XMC4800F144F1024AAXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,1MBFLASH; 3.3VDC Type of integrated circuit: ARM microcontroller Case: PG-LQFP-144 Memory: 128kB SRAM; 1MB FLASH Number of inputs/outputs: 119 Supply voltage: 3.3V DC Operating temperature: -40...85°C Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog Number of A/D channels: 26 Kind of architecture: Cortex M4 Family: XMC4800 кількість в упаковці: 60 шт |
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XMC4800F144F1536AAXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,1536kBFLASH Type of integrated circuit: ARM microcontroller Case: PG-LQFP-144 Memory: 128kB SRAM; 1.5MB FLASH Number of inputs/outputs: 119 Supply voltage: 3.3V DC Operating temperature: -40...85°C Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog Number of A/D channels: 26 Kind of architecture: Cortex M4 Family: XMC4800 кількість в упаковці: 960 шт |
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XMC4800F144F2048AAXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,2MBFLASH; 3.3VDC Type of integrated circuit: ARM microcontroller Case: PG-LQFP-144 Memory: 128kB SRAM; 2MB FLASH Number of inputs/outputs: 119 Supply voltage: 3.3V DC Operating temperature: -40...85°C Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog Number of A/D channels: 26 Kind of architecture: Cortex M4 Family: XMC4800 кількість в упаковці: 2500 шт |
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XMC4800F144K1024AAXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,1MBFLASH; 3.3VDC Type of integrated circuit: ARM microcontroller Case: PG-LQFP-144 Memory: 128kB SRAM; 1MB FLASH Number of inputs/outputs: 119 Supply voltage: 3.3V DC Operating temperature: -40...125°C Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog Number of A/D channels: 26 Kind of architecture: Cortex M4 Family: XMC4800 кількість в упаковці: 960 шт |
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XMC4800F144K1536AAXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,1536kBFLASH Operating temperature: -40...125°C Family: XMC4800 Supply voltage: 3.3V DC Number of A/D channels: 26 Kind of architecture: Cortex M4 Memory: 128kB SRAM; 1.5MB FLASH Case: PG-LQFP-144 Type of integrated circuit: ARM microcontroller Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART Number of inputs/outputs: 119 Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog кількість в упаковці: 2500 шт |
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XMC4800F144K2048AAXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,2MBFLASH; 3.3VDC Type of integrated circuit: ARM microcontroller Case: PG-LQFP-144 Memory: 128kB SRAM; 2MB FLASH Number of inputs/outputs: 119 Supply voltage: 3.3V DC Operating temperature: -40...125°C Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog Number of A/D channels: 26 Kind of architecture: Cortex M4 Family: XMC4800 кількість в упаковці: 2500 шт |
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| 6EDL04I06PTXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT three-phase bridge; EiceDRIVER™; PG-DSO-28; Ch: 6 Type of integrated circuit: driver Topology: IGBT three-phase bridge Kind of integrated circuit: high-/low-side; IGBT gate driver Technology: EiceDRIVER™ Case: PG-DSO-28 Output current: -0.375...0.24A Number of channels: 6 Supply voltage: 13...17.5V Integrated circuit features: integrated bootstrap functionality Mounting: SMD Kind of package: reel; tape Voltage class: 600V Protection: anti-overload OPP; undervoltage UVP кількість в упаковці: 1000 шт |
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6EDL04N02PR | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET three-phase bridge; EiceDRIVER™; TSSOP28; Ch: 6 Type of integrated circuit: driver Topology: MOSFET three-phase bridge Kind of integrated circuit: high-/low-side; MOSFET gate driver Technology: EiceDRIVER™ Case: TSSOP28 Output current: -0.375...0.24A Number of channels: 6 Supply voltage: 10...17.5V Integrated circuit features: integrated bootstrap functionality Mounting: SMD Kind of package: reel; tape Voltage class: 200V Protection: anti-overload OPP; undervoltage UVP кількість в упаковці: 3000 шт |
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| AIDK08S65C5ATMA1 | INFINEON TECHNOLOGIES |
AIDK08S65C5ATMA1 SMD Schottky diodes |
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| AIDK10S65C5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; PG-TO263-2; 53W Technology: CoolSiC™ 5G; SiC Power dissipation: 53W Case: PG-TO263-2 Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 650V Max. forward voltage: 2.1V Load current: 10A Leakage current: 12µA Type of diode: Schottky rectifying Max. forward impulse current: 33A кількість в упаковці: 1000 шт |
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| AIDK12S65C5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 12A; PG-TO263-2; 62W Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Mounting: SMD Max. off-state voltage: 650V Load current: 12A Semiconductor structure: single diode Max. forward voltage: 2.1V Case: PG-TO263-2 Kind of package: reel; tape Leakage current: 14µA Max. forward impulse current: 40A Power dissipation: 62W кількість в упаковці: 1000 шт |
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| AIDW10S65C5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 65W; TO247-3 Technology: CoolSiC™ 5G; SiC Power dissipation: 65W Case: TO247-3 Mounting: THT Semiconductor structure: single diode Max. off-state voltage: 650V Application: automotive industry Load current: 10A Type of diode: Schottky rectifying Max. forward impulse current: 58A кількість в упаковці: 1 шт |
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| AIDW12S65C5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; 76W; TO247-3 Case: TO247-3 Mounting: THT Power dissipation: 76W Application: automotive industry Type of diode: Schottky rectifying Max. forward impulse current: 71A Semiconductor structure: single diode Load current: 12A Max. off-state voltage: 650V Technology: CoolSiC™ 5G; SiC кількість в упаковці: 1 шт |
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| AIDW16S65C5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; 94W; TO247-3 Case: TO247-3 Mounting: THT Power dissipation: 94W Technology: CoolSiC™ 5G; SiC Application: automotive industry Max. off-state voltage: 650V Load current: 16A Semiconductor structure: single diode Type of diode: Schottky rectifying Max. forward impulse current: 95A кількість в упаковці: 1 шт |
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| AIDW20S65C5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; 112W; TO247-3 Case: TO247-3 Mounting: THT Application: automotive industry Technology: CoolSiC™ 5G; SiC Load current: 20A Semiconductor structure: single diode Max. forward impulse current: 103A Max. off-state voltage: 650V Power dissipation: 112W Type of diode: Schottky rectifying кількість в упаковці: 1 шт |
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| AIDW30S65C5XKSA1 | INFINEON TECHNOLOGIES |
AIDW30S65C5XKSA1 THT Schottky diodes |
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| AIDW40S65C5XKSA1 | INFINEON TECHNOLOGIES |
AIDW40S65C5XKSA1 THT Schottky diodes |
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AIGW40N65F5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; F5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 46A Power dissipation: 125W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 95nC Kind of package: tube Manufacturer series: F5 Turn-on time: 30ns Turn-off time: 178ns кількість в упаковці: 1 шт |
на замовлення 237 шт: термін постачання 14-21 дні (днів) |
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AIGW40N65H5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; H5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 46A Power dissipation: 125W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 92nC Kind of package: tube Manufacturer series: H5 Turn-on time: 31ns Turn-off time: 160ns кількість в упаковці: 1 шт |
на замовлення 208 шт: термін постачання 14-21 дні (днів) |
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AIGW50N65F5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; F5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 53.5A Power dissipation: 136W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 108nC Kind of package: tube Manufacturer series: F5 Turn-on time: 33ns Turn-off time: 162ns кількість в упаковці: 1 шт |
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AIGW50N65H5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; H5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 53.5A Power dissipation: 136W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 116nC Kind of package: tube Manufacturer series: H5 Turn-on time: 33ns Turn-off time: 184ns кількість в упаковці: 240 шт |
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AIHD04N60RATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 4A; 75W; DPAK Type of transistor: IGBT Technology: TRENCHSTOP™ RC Collector-emitter voltage: 600V Collector current: 4A Power dissipation: 75W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 12A Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Turn-on time: 22ns Turn-off time: 317ns Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) кількість в упаковці: 2500 шт |
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AIHD04N60RFATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 4A; 75W; DPAK Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 4A Power dissipation: 75W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 12A Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Turn-on time: 19ns Turn-off time: 153ns Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) кількість в упаковці: 2500 шт |
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AIHD06N60RATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK Type of transistor: IGBT Technology: TRENCHSTOP™ RC Collector-emitter voltage: 600V Collector current: 6A Power dissipation: 100W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 18A Mounting: SMD Gate charge: 48nC Kind of package: reel; tape Turn-on time: 19ns Turn-off time: 279ns Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) кількість в упаковці: 2500 шт |
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AIHD06N60RFATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 6A; 100W; DPAK Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 6A Power dissipation: 100W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 18A Mounting: SMD Gate charge: 48nC Kind of package: reel; tape Turn-on time: 16ns Turn-off time: 127ns Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) кількість в упаковці: 2500 шт |
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AIHD10N60RATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 10A; 150W; DPAK Type of transistor: IGBT Technology: TRENCHSTOP™ RC Collector-emitter voltage: 600V Collector current: 10A Power dissipation: 150W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 30A Mounting: SMD Gate charge: 64nC Kind of package: reel; tape Turn-on time: 24ns Turn-off time: 331ns Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) кількість в упаковці: 2500 шт |
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AIHD10N60RFATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 10A; 150W; DPAK Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 10A Power dissipation: 150W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 30A Mounting: SMD Gate charge: 64nC Kind of package: reel; tape Turn-on time: 27ns Turn-off time: 186ns Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) кількість в упаковці: 2500 шт |
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AIHD15N60RATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK Type of transistor: IGBT Technology: TRENCHSTOP™ RC Collector-emitter voltage: 600V Collector current: 15A Power dissipation: 250W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 45A Mounting: SMD Gate charge: 90nC Kind of package: reel; tape Turn-on time: 26ns Turn-off time: 319ns Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) кількість в упаковці: 2500 шт |
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AIHD15N60RFATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 15A; 250W; DPAK Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 15A Power dissipation: 250W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 45A Mounting: SMD Gate charge: 90nC Kind of package: reel; tape Turn-on time: 28ns Turn-off time: 177ns Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) кількість в упаковці: 2500 шт |
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AIKB20N60CTATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 20A; 156W; D2PAK Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 20A Power dissipation: 156W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: SMD Gate charge: 0.12µC Kind of package: reel; tape Turn-on time: 32ns Turn-off time: 241ns Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1000 шт |
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AIKP20N60CTAKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 20A; 156W; TO220-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 20A Power dissipation: 156W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 0.12µC Kind of package: tube Turn-on time: 32ns Turn-off time: 241ns Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
на замовлення 389 шт: термін постачання 14-21 дні (днів) |
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AIKQ100N60CTXKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 100A; 714W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 100A Power dissipation: 714W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 400A Mounting: THT Gate charge: 610nC Kind of package: tube Turn-on time: 68ns Turn-off time: 321ns Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 240 шт |
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AIKQ120N60CTXKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 120A Power dissipation: 833W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 480A Mounting: THT Gate charge: 772nC Kind of package: tube Turn-on time: 76ns Turn-off time: 343ns Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 240 шт |
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AIKW20N60CTXKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 20A; 166W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 20A Power dissipation: 166W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 0.12µC Kind of package: tube Turn-on time: 32ns Turn-off time: 241ns Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
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AIKW30N60CTXKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 187W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 90A Mounting: THT Gate charge: 167nC Kind of package: tube Turn-on time: 44ns Turn-off time: 0.3µs Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
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AIKW40N65DF5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; F5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 46A Power dissipation: 125W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 95nC Kind of package: tube Manufacturer series: F5 Turn-on time: 30ns Turn-off time: 178ns Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
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AIKW40N65DH5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; H5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 46A Power dissipation: 125W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 92nC Kind of package: tube Manufacturer series: H5 Turn-on time: 31ns Turn-off time: 164ns Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
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AIKW50N60CTXKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 50A Power dissipation: 333W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 310nC Kind of package: tube Turn-on time: 55ns Turn-off time: 328ns Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
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AIKW50N65DF5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; F5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 53.5A Power dissipation: 136W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 108nC Kind of package: tube Manufacturer series: F5 Turn-on time: 33ns Turn-off time: 162ns Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
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AIKW50N65DH5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; H5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 53.5A Power dissipation: 136W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 116nC Kind of package: tube Manufacturer series: H5 Turn-on time: 22ns Turn-off time: 256ns Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
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AIKW75N60CTXKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 75A Power dissipation: 428W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 225A Mounting: THT Gate charge: 470nC Kind of package: tube Turn-on time: 69ns Turn-off time: 365ns Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
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AIMW120R045M1XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W Mounting: THT Drain-source voltage: 1.2kV Drain current: 36A On-state resistance: 75mΩ Type of transistor: N-MOSFET Power dissipation: 114W Polarisation: unipolar Kind of package: tube Technology: CoolSiC™; SiC Kind of channel: enhanced Gate-source voltage: -7...20V Pulsed drain current: 130A Case: TO247 кількість в упаковці: 1 шт |
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AUIPS2051LTR | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 900mA; Ch: 1; N-Channel; SMD; SOT223 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 0.9A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT223 On-state resistance: 0.3Ω Kind of package: reel Technology: HITFET® Operating temperature: -40...150°C Output voltage: 70V Power dissipation: 2W Turn-on time: 1.3µs Turn-off time: 2.3µs Application: automotive industry кількість в упаковці: 2500 шт |
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AUIPS2052GTR | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 900mA; Ch: 1; N-Channel; SMD; SO8; 2W Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 0.9A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 On-state resistance: 0.3Ω Kind of package: reel; tape Technology: HITFET® Operating temperature: -40...150°C Output voltage: 35V Power dissipation: 2W Turn-on time: 1.3µs Turn-off time: 2.3µs кількість в упаковці: 2500 шт |
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| AUIPS6031RTRL | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 2.8A; Ch: 1; N-Channel; SMD; DPAK; reel Output current: 2.8A Operating temperature: -40...150°C Mounting: SMD Application: automotive industry Case: DPAK Kind of package: reel Number of channels: 1 Type of integrated circuit: power switch Technology: Classic PROFET Kind of integrated circuit: high-side Power dissipation: 2.5W On-state resistance: 60mΩ Kind of output: N-Channel кількість в упаковці: 3000 шт |
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AUIPS7091GTR | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 8A; Ch: 1; N-Channel; SMD; SO8; reel Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 8A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 On-state resistance: 0.12Ω Kind of package: reel Technology: Classic PROFET Operating temperature: -40...150°C Power dissipation: 1.25W Application: automotive industry кількість в упаковці: 2500 шт |
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| AUIPS7111STRL | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 10A; Ch: 1; N-Channel; SMD; D2PAK-5 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 10A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: D2PAK-5 On-state resistance: 7.5mΩ Kind of package: reel Technology: Classic PROFET Operating temperature: -40...150°C Power dissipation: 2.5W Application: automotive industry кількість в упаковці: 800 шт |
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AUIPS71451GTR | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1.5A; Ch: 1; N-Channel; SMD; SO8; reel Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1.5A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 On-state resistance: 0.1Ω Kind of package: reel Technology: Classic PROFET Operating temperature: -40...150°C Power dissipation: 1.25W Application: automotive industry кількість в упаковці: 2500 шт |
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AUIR2085STR | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Mounting: SMD Case: SO8 Kind of package: reel; tape Kind of integrated circuit: gate driver; high-/low-side Topology: MOSFET half-bridge Voltage class: 100V Power: 625mW Supply voltage: 10...15V DC Output current: -1...1A Type of integrated circuit: driver Number of channels: 2 кількість в упаковці: 2500 шт |
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AUIR3240STR | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,MOSFET gate driver; SO8; 0.3A; Ch: 1; 4÷36VDC Mounting: SMD Case: SO8 Kind of package: reel; tape Kind of integrated circuit: high-side; MOSFET gate driver Voltage class: 40V Supply voltage: 4...36V DC Output current: 0.3A Type of integrated circuit: driver Number of channels: 1 кількість в упаковці: 2500 шт |
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AUIR3241STR | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,MOSFET gate driver; SO8; 625mW; Ch: 1; 40V Type of integrated circuit: driver Mounting: SMD Number of channels: 1 Case: SO8 Operating temperature: -40...125°C Kind of package: reel; tape Kind of integrated circuit: high-side; MOSFET gate driver Voltage class: 40V Power: 625mW Supply voltage: 3...36V DC кількість в упаковці: 2500 шт |
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AUIR3242SXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,MOSFET gate driver; SO8; 0.2A; Ch: 1; 3÷36VDC Type of integrated circuit: driver Kind of integrated circuit: high-side; MOSFET gate driver Case: SO8 Output current: 0.2A Number of channels: 1 Supply voltage: 3...36V DC Mounting: SMD Voltage class: 40V кількість в упаковці: 2500 шт |
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| AUIR3314STRL | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 18A; Ch: 1; N-Channel; SMD; D2PAK-5 Mounting: SMD Case: D2PAK-5 Operating temperature: -40...150°C Kind of package: reel Number of channels: 1 Kind of output: N-Channel Application: automotive industry Power dissipation: 2W Technology: Classic PROFET Kind of integrated circuit: high-side On-state resistance: 12mΩ Output current: 18A Type of integrated circuit: power switch кількість в упаковці: 800 шт |
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AUIRF1010ZSTRL | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 94A; 140W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 94A Power dissipation: 140W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 800 шт |
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AUIRF1324S-7P | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 24V; 429A; 300W; D2PAK-7 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 24V Drain current: 429A Power dissipation: 300W Case: D2PAK-7 Gate-source voltage: ±20V On-state resistance: 1mΩ Mounting: SMD Gate charge: 180nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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AUIRF1324STRL | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 24V; 340A; 300W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 24V Drain current: 340A Power dissipation: 300W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 800 шт |
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AUIRF1324WL | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 24V; 382A; 300W; TO262WL Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 24V Drain current: 382A Power dissipation: 300W Case: TO262WL Gate-source voltage: ±20V On-state resistance: 1.16mΩ Mounting: THT Gate charge: 0.12µC Kind of channel: enhanced кількість в упаковці: 1000 шт |
товар відсутній |
| XMC4800F100F2048AAXQMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 128kBSRAM,2MBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-100
Memory: 128kB SRAM; 2MB FLASH
Number of inputs/outputs: 75
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4800
кількість в упаковці: 2500 шт
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 128kBSRAM,2MBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-100
Memory: 128kB SRAM; 2MB FLASH
Number of inputs/outputs: 75
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4800
кількість в упаковці: 2500 шт
товар відсутній
| XMC4800F100K1536AAXQMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 128kBSRAM,1536kBFLASH
Operating temperature: -40...125°C
Family: XMC4800
Supply voltage: 3.3V DC
Number of A/D channels: 18
Kind of architecture: Cortex M4
Memory: 128kB SRAM; 1.5MB FLASH
Case: PG-LQFP-100
Type of integrated circuit: ARM microcontroller
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Number of inputs/outputs: 75
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
кількість в упаковці: 960 шт
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 128kBSRAM,1536kBFLASH
Operating temperature: -40...125°C
Family: XMC4800
Supply voltage: 3.3V DC
Number of A/D channels: 18
Kind of architecture: Cortex M4
Memory: 128kB SRAM; 1.5MB FLASH
Case: PG-LQFP-100
Type of integrated circuit: ARM microcontroller
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Number of inputs/outputs: 75
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
кількість в упаковці: 960 шт
товар відсутній
| XMC4800F100K2048AAXQMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 128kBSRAM,2MBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-100
Memory: 128kB SRAM; 2MB FLASH
Number of inputs/outputs: 75
Supply voltage: 3.3V DC
Operating temperature: -40...125°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4800
кількість в упаковці: 2500 шт
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 128kBSRAM,2MBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-100
Memory: 128kB SRAM; 2MB FLASH
Number of inputs/outputs: 75
Supply voltage: 3.3V DC
Operating temperature: -40...125°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4800
кількість в упаковці: 2500 шт
товар відсутній
| XMC4800F144F1024AAXQMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,1MBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-144
Memory: 128kB SRAM; 1MB FLASH
Number of inputs/outputs: 119
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
кількість в упаковці: 60 шт
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,1MBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-144
Memory: 128kB SRAM; 1MB FLASH
Number of inputs/outputs: 119
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
кількість в упаковці: 60 шт
товар відсутній
| XMC4800F144F1536AAXQMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,1536kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-144
Memory: 128kB SRAM; 1.5MB FLASH
Number of inputs/outputs: 119
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
кількість в упаковці: 960 шт
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,1536kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-144
Memory: 128kB SRAM; 1.5MB FLASH
Number of inputs/outputs: 119
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
кількість в упаковці: 960 шт
товар відсутній
| XMC4800F144F2048AAXQMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,2MBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-144
Memory: 128kB SRAM; 2MB FLASH
Number of inputs/outputs: 119
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
кількість в упаковці: 2500 шт
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,2MBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-144
Memory: 128kB SRAM; 2MB FLASH
Number of inputs/outputs: 119
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
кількість в упаковці: 2500 шт
товар відсутній
| XMC4800F144K1024AAXQMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,1MBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-144
Memory: 128kB SRAM; 1MB FLASH
Number of inputs/outputs: 119
Supply voltage: 3.3V DC
Operating temperature: -40...125°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
кількість в упаковці: 960 шт
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,1MBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-144
Memory: 128kB SRAM; 1MB FLASH
Number of inputs/outputs: 119
Supply voltage: 3.3V DC
Operating temperature: -40...125°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
кількість в упаковці: 960 шт
товар відсутній
| XMC4800F144K1536AAXQMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,1536kBFLASH
Operating temperature: -40...125°C
Family: XMC4800
Supply voltage: 3.3V DC
Number of A/D channels: 26
Kind of architecture: Cortex M4
Memory: 128kB SRAM; 1.5MB FLASH
Case: PG-LQFP-144
Type of integrated circuit: ARM microcontroller
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Number of inputs/outputs: 119
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
кількість в упаковці: 2500 шт
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,1536kBFLASH
Operating temperature: -40...125°C
Family: XMC4800
Supply voltage: 3.3V DC
Number of A/D channels: 26
Kind of architecture: Cortex M4
Memory: 128kB SRAM; 1.5MB FLASH
Case: PG-LQFP-144
Type of integrated circuit: ARM microcontroller
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Number of inputs/outputs: 119
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
кількість в упаковці: 2500 шт
товар відсутній
| XMC4800F144K2048AAXQMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,2MBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-144
Memory: 128kB SRAM; 2MB FLASH
Number of inputs/outputs: 119
Supply voltage: 3.3V DC
Operating temperature: -40...125°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
кількість в упаковці: 2500 шт
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,2MBFLASH; 3.3VDC
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-144
Memory: 128kB SRAM; 2MB FLASH
Number of inputs/outputs: 119
Supply voltage: 3.3V DC
Operating temperature: -40...125°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
кількість в упаковці: 2500 шт
товар відсутній
| 6EDL04I06PTXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge; EiceDRIVER™; PG-DSO-28; Ch: 6
Type of integrated circuit: driver
Topology: IGBT three-phase bridge
Kind of integrated circuit: high-/low-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-28
Output current: -0.375...0.24A
Number of channels: 6
Supply voltage: 13...17.5V
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
кількість в упаковці: 1000 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge; EiceDRIVER™; PG-DSO-28; Ch: 6
Type of integrated circuit: driver
Topology: IGBT three-phase bridge
Kind of integrated circuit: high-/low-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-28
Output current: -0.375...0.24A
Number of channels: 6
Supply voltage: 13...17.5V
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
кількість в упаковці: 1000 шт
товар відсутній
| 6EDL04N02PR |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET three-phase bridge; EiceDRIVER™; TSSOP28; Ch: 6
Type of integrated circuit: driver
Topology: MOSFET three-phase bridge
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Technology: EiceDRIVER™
Case: TSSOP28
Output current: -0.375...0.24A
Number of channels: 6
Supply voltage: 10...17.5V
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Voltage class: 200V
Protection: anti-overload OPP; undervoltage UVP
кількість в упаковці: 3000 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET three-phase bridge; EiceDRIVER™; TSSOP28; Ch: 6
Type of integrated circuit: driver
Topology: MOSFET three-phase bridge
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Technology: EiceDRIVER™
Case: TSSOP28
Output current: -0.375...0.24A
Number of channels: 6
Supply voltage: 10...17.5V
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Voltage class: 200V
Protection: anti-overload OPP; undervoltage UVP
кількість в упаковці: 3000 шт
товар відсутній
| AIDK08S65C5ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
AIDK08S65C5ATMA1 SMD Schottky diodes
AIDK08S65C5ATMA1 SMD Schottky diodes
товар відсутній
| AIDK10S65C5ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; PG-TO263-2; 53W
Technology: CoolSiC™ 5G; SiC
Power dissipation: 53W
Case: PG-TO263-2
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 650V
Max. forward voltage: 2.1V
Load current: 10A
Leakage current: 12µA
Type of diode: Schottky rectifying
Max. forward impulse current: 33A
кількість в упаковці: 1000 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; PG-TO263-2; 53W
Technology: CoolSiC™ 5G; SiC
Power dissipation: 53W
Case: PG-TO263-2
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 650V
Max. forward voltage: 2.1V
Load current: 10A
Leakage current: 12µA
Type of diode: Schottky rectifying
Max. forward impulse current: 33A
кількість в упаковці: 1000 шт
товар відсутній
| AIDK12S65C5ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 12A; PG-TO263-2; 62W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Max. forward voltage: 2.1V
Case: PG-TO263-2
Kind of package: reel; tape
Leakage current: 14µA
Max. forward impulse current: 40A
Power dissipation: 62W
кількість в упаковці: 1000 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 12A; PG-TO263-2; 62W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 12A
Semiconductor structure: single diode
Max. forward voltage: 2.1V
Case: PG-TO263-2
Kind of package: reel; tape
Leakage current: 14µA
Max. forward impulse current: 40A
Power dissipation: 62W
кількість в упаковці: 1000 шт
товар відсутній
| AIDW10S65C5XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 65W; TO247-3
Technology: CoolSiC™ 5G; SiC
Power dissipation: 65W
Case: TO247-3
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 650V
Application: automotive industry
Load current: 10A
Type of diode: Schottky rectifying
Max. forward impulse current: 58A
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 65W; TO247-3
Technology: CoolSiC™ 5G; SiC
Power dissipation: 65W
Case: TO247-3
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 650V
Application: automotive industry
Load current: 10A
Type of diode: Schottky rectifying
Max. forward impulse current: 58A
кількість в упаковці: 1 шт
товар відсутній
| AIDW12S65C5XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; 76W; TO247-3
Case: TO247-3
Mounting: THT
Power dissipation: 76W
Application: automotive industry
Type of diode: Schottky rectifying
Max. forward impulse current: 71A
Semiconductor structure: single diode
Load current: 12A
Max. off-state voltage: 650V
Technology: CoolSiC™ 5G; SiC
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; 76W; TO247-3
Case: TO247-3
Mounting: THT
Power dissipation: 76W
Application: automotive industry
Type of diode: Schottky rectifying
Max. forward impulse current: 71A
Semiconductor structure: single diode
Load current: 12A
Max. off-state voltage: 650V
Technology: CoolSiC™ 5G; SiC
кількість в упаковці: 1 шт
товар відсутній
| AIDW16S65C5XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; 94W; TO247-3
Case: TO247-3
Mounting: THT
Power dissipation: 94W
Technology: CoolSiC™ 5G; SiC
Application: automotive industry
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward impulse current: 95A
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; 94W; TO247-3
Case: TO247-3
Mounting: THT
Power dissipation: 94W
Technology: CoolSiC™ 5G; SiC
Application: automotive industry
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward impulse current: 95A
кількість в упаковці: 1 шт
товар відсутній
| AIDW20S65C5XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; 112W; TO247-3
Case: TO247-3
Mounting: THT
Application: automotive industry
Technology: CoolSiC™ 5G; SiC
Load current: 20A
Semiconductor structure: single diode
Max. forward impulse current: 103A
Max. off-state voltage: 650V
Power dissipation: 112W
Type of diode: Schottky rectifying
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; 112W; TO247-3
Case: TO247-3
Mounting: THT
Application: automotive industry
Technology: CoolSiC™ 5G; SiC
Load current: 20A
Semiconductor structure: single diode
Max. forward impulse current: 103A
Max. off-state voltage: 650V
Power dissipation: 112W
Type of diode: Schottky rectifying
кількість в упаковці: 1 шт
товар відсутній
| AIDW30S65C5XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
AIDW30S65C5XKSA1 THT Schottky diodes
AIDW30S65C5XKSA1 THT Schottky diodes
товар відсутній
| AIDW40S65C5XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
AIDW40S65C5XKSA1 THT Schottky diodes
AIDW40S65C5XKSA1 THT Schottky diodes
товар відсутній
| AIGW40N65F5XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Manufacturer series: F5
Turn-on time: 30ns
Turn-off time: 178ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Manufacturer series: F5
Turn-on time: 30ns
Turn-off time: 178ns
кількість в упаковці: 1 шт
на замовлення 237 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 651.4 грн |
| 2+ | 546.64 грн |
| 6+ | 497.3 грн |
| 100+ | 477.02 грн |
| AIGW40N65H5XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Manufacturer series: H5
Turn-on time: 31ns
Turn-off time: 160ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Manufacturer series: H5
Turn-on time: 31ns
Turn-off time: 160ns
кількість в упаковці: 1 шт
на замовлення 208 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 619.12 грн |
| 3+ | 411.13 грн |
| 8+ | 374.74 грн |
| 30+ | 373.86 грн |
| 240+ | 360.63 грн |
| AIGW50N65F5XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 53.5A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Manufacturer series: F5
Turn-on time: 33ns
Turn-off time: 162ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 53.5A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Manufacturer series: F5
Turn-on time: 33ns
Turn-off time: 162ns
кількість в упаковці: 1 шт
товар відсутній
| AIGW50N65H5XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 53.5A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Manufacturer series: H5
Turn-on time: 33ns
Turn-off time: 184ns
кількість в упаковці: 240 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 53.5A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Manufacturer series: H5
Turn-on time: 33ns
Turn-off time: 184ns
кількість в упаковці: 240 шт
товар відсутній
| AIHD04N60RATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 600V
Collector current: 4A
Power dissipation: 75W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 12A
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Turn-on time: 22ns
Turn-off time: 317ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
кількість в упаковці: 2500 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 600V
Collector current: 4A
Power dissipation: 75W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 12A
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Turn-on time: 22ns
Turn-off time: 317ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
кількість в упаковці: 2500 шт
товар відсутній
| AIHD04N60RFATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 4A
Power dissipation: 75W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 12A
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Turn-on time: 19ns
Turn-off time: 153ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
кількість в упаковці: 2500 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 4A
Power dissipation: 75W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 12A
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Turn-on time: 19ns
Turn-off time: 153ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
кількість в упаковці: 2500 шт
товар відсутній
| AIHD06N60RATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 100W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Turn-on time: 19ns
Turn-off time: 279ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
кількість в упаковці: 2500 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 100W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Turn-on time: 19ns
Turn-off time: 279ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
кількість в упаковці: 2500 шт
товар відсутній
| AIHD06N60RFATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 100W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Turn-on time: 16ns
Turn-off time: 127ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
кількість в упаковці: 2500 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 100W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 18A
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Turn-on time: 16ns
Turn-off time: 127ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
кількість в упаковці: 2500 шт
товар відсутній
| AIHD10N60RATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Turn-on time: 24ns
Turn-off time: 331ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
кількість в упаковці: 2500 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Turn-on time: 24ns
Turn-off time: 331ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
кількість в упаковці: 2500 шт
товар відсутній
| AIHD10N60RFATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Turn-on time: 27ns
Turn-off time: 186ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
кількість в упаковці: 2500 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Turn-on time: 27ns
Turn-off time: 186ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
кількість в упаковці: 2500 шт
товар відсутній
| AIHD15N60RATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 250W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Turn-on time: 26ns
Turn-off time: 319ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
кількість в упаковці: 2500 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 250W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Turn-on time: 26ns
Turn-off time: 319ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
кількість в упаковці: 2500 шт
товар відсутній
| AIHD15N60RFATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 250W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Turn-on time: 28ns
Turn-off time: 177ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
кількість в упаковці: 2500 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 250W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Turn-on time: 28ns
Turn-off time: 177ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
кількість в упаковці: 2500 шт
товар відсутній
| AIKB20N60CTATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 156W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 156W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel; tape
Turn-on time: 32ns
Turn-off time: 241ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1000 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 156W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 156W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel; tape
Turn-on time: 32ns
Turn-off time: 241ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1000 шт
товар відсутній
| AIKP20N60CTAKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 156W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 156W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 32ns
Turn-off time: 241ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 156W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 156W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 32ns
Turn-off time: 241ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
на замовлення 389 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 351.34 грн |
| 3+ | 299.42 грн |
| 5+ | 250.41 грн |
| 12+ | 236.31 грн |
| 250+ | 227.49 грн |
| AIKQ100N60CTXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 100A; 714W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 100A
Power dissipation: 714W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 610nC
Kind of package: tube
Turn-on time: 68ns
Turn-off time: 321ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 240 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 100A; 714W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 100A
Power dissipation: 714W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 610nC
Kind of package: tube
Turn-on time: 68ns
Turn-off time: 321ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 240 шт
товар відсутній
| AIKQ120N60CTXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 120A
Power dissipation: 833W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 772nC
Kind of package: tube
Turn-on time: 76ns
Turn-off time: 343ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 240 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 120A
Power dissipation: 833W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 772nC
Kind of package: tube
Turn-on time: 76ns
Turn-off time: 343ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 240 шт
товар відсутній
| AIKW20N60CTXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 166W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 166W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 32ns
Turn-off time: 241ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 166W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 166W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 32ns
Turn-off time: 241ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
товар відсутній
| AIKW30N60CTXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 187W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 167nC
Kind of package: tube
Turn-on time: 44ns
Turn-off time: 0.3µs
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 187W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 167nC
Kind of package: tube
Turn-on time: 44ns
Turn-off time: 0.3µs
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
товар відсутній
| AIKW40N65DF5XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Manufacturer series: F5
Turn-on time: 30ns
Turn-off time: 178ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Manufacturer series: F5
Turn-on time: 30ns
Turn-off time: 178ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
товар відсутній
| AIKW40N65DH5XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Manufacturer series: H5
Turn-on time: 31ns
Turn-off time: 164ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Manufacturer series: H5
Turn-on time: 31ns
Turn-off time: 164ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
товар відсутній
| AIKW50N60CTXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 333W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Turn-on time: 55ns
Turn-off time: 328ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 333W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Turn-on time: 55ns
Turn-off time: 328ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
товар відсутній
| AIKW50N65DF5XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 53.5A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Manufacturer series: F5
Turn-on time: 33ns
Turn-off time: 162ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 53.5A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Manufacturer series: F5
Turn-on time: 33ns
Turn-off time: 162ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
товар відсутній
| AIKW50N65DH5XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 53.5A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Manufacturer series: H5
Turn-on time: 22ns
Turn-off time: 256ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 53.5A; 136W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 53.5A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Manufacturer series: H5
Turn-on time: 22ns
Turn-off time: 256ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
товар відсутній
| AIKW75N60CTXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 428W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Turn-on time: 69ns
Turn-off time: 365ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 428W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Turn-on time: 69ns
Turn-off time: 365ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
товар відсутній
| AIMW120R045M1XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 36A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Power dissipation: 114W
Polarisation: unipolar
Kind of package: tube
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...20V
Pulsed drain current: 130A
Case: TO247
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W
Mounting: THT
Drain-source voltage: 1.2kV
Drain current: 36A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Power dissipation: 114W
Polarisation: unipolar
Kind of package: tube
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...20V
Pulsed drain current: 130A
Case: TO247
кількість в упаковці: 1 шт
товар відсутній
| AUIPS2051LTR |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 900mA; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 0.9A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.3Ω
Kind of package: reel
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 70V
Power dissipation: 2W
Turn-on time: 1.3µs
Turn-off time: 2.3µs
Application: automotive industry
кількість в упаковці: 2500 шт
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 900mA; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 0.9A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.3Ω
Kind of package: reel
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 70V
Power dissipation: 2W
Turn-on time: 1.3µs
Turn-off time: 2.3µs
Application: automotive industry
кількість в упаковці: 2500 шт
товар відсутній
| AUIPS2052GTR |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 900mA; Ch: 1; N-Channel; SMD; SO8; 2W
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 0.9A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.3Ω
Kind of package: reel; tape
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 35V
Power dissipation: 2W
Turn-on time: 1.3µs
Turn-off time: 2.3µs
кількість в упаковці: 2500 шт
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 900mA; Ch: 1; N-Channel; SMD; SO8; 2W
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 0.9A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.3Ω
Kind of package: reel; tape
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 35V
Power dissipation: 2W
Turn-on time: 1.3µs
Turn-off time: 2.3µs
кількість в упаковці: 2500 шт
товар відсутній
| AUIPS6031RTRL |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.8A; Ch: 1; N-Channel; SMD; DPAK; reel
Output current: 2.8A
Operating temperature: -40...150°C
Mounting: SMD
Application: automotive industry
Case: DPAK
Kind of package: reel
Number of channels: 1
Type of integrated circuit: power switch
Technology: Classic PROFET
Kind of integrated circuit: high-side
Power dissipation: 2.5W
On-state resistance: 60mΩ
Kind of output: N-Channel
кількість в упаковці: 3000 шт
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.8A; Ch: 1; N-Channel; SMD; DPAK; reel
Output current: 2.8A
Operating temperature: -40...150°C
Mounting: SMD
Application: automotive industry
Case: DPAK
Kind of package: reel
Number of channels: 1
Type of integrated circuit: power switch
Technology: Classic PROFET
Kind of integrated circuit: high-side
Power dissipation: 2.5W
On-state resistance: 60mΩ
Kind of output: N-Channel
кількість в упаковці: 3000 шт
товар відсутній
| AUIPS7091GTR |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 8A; Ch: 1; N-Channel; SMD; SO8; reel
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.12Ω
Kind of package: reel
Technology: Classic PROFET
Operating temperature: -40...150°C
Power dissipation: 1.25W
Application: automotive industry
кількість в упаковці: 2500 шт
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 8A; Ch: 1; N-Channel; SMD; SO8; reel
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.12Ω
Kind of package: reel
Technology: Classic PROFET
Operating temperature: -40...150°C
Power dissipation: 1.25W
Application: automotive industry
кількість в упаковці: 2500 шт
товар відсутній
| AUIPS7111STRL |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 10A; Ch: 1; N-Channel; SMD; D2PAK-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 10A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: D2PAK-5
On-state resistance: 7.5mΩ
Kind of package: reel
Technology: Classic PROFET
Operating temperature: -40...150°C
Power dissipation: 2.5W
Application: automotive industry
кількість в упаковці: 800 шт
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 10A; Ch: 1; N-Channel; SMD; D2PAK-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 10A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: D2PAK-5
On-state resistance: 7.5mΩ
Kind of package: reel
Technology: Classic PROFET
Operating temperature: -40...150°C
Power dissipation: 2.5W
Application: automotive industry
кількість в упаковці: 800 шт
товар відсутній
| AUIPS71451GTR |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 1; N-Channel; SMD; SO8; reel
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.1Ω
Kind of package: reel
Technology: Classic PROFET
Operating temperature: -40...150°C
Power dissipation: 1.25W
Application: automotive industry
кількість в упаковці: 2500 шт
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 1; N-Channel; SMD; SO8; reel
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.1Ω
Kind of package: reel
Technology: Classic PROFET
Operating temperature: -40...150°C
Power dissipation: 1.25W
Application: automotive industry
кількість в упаковці: 2500 шт
товар відсутній
| AUIR2085STR |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 100V
Power: 625mW
Supply voltage: 10...15V DC
Output current: -1...1A
Type of integrated circuit: driver
Number of channels: 2
кількість в упаковці: 2500 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 100V
Power: 625mW
Supply voltage: 10...15V DC
Output current: -1...1A
Type of integrated circuit: driver
Number of channels: 2
кількість в упаковці: 2500 шт
товар відсутній
| AUIR3240STR |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,MOSFET gate driver; SO8; 0.3A; Ch: 1; 4÷36VDC
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Kind of integrated circuit: high-side; MOSFET gate driver
Voltage class: 40V
Supply voltage: 4...36V DC
Output current: 0.3A
Type of integrated circuit: driver
Number of channels: 1
кількість в упаковці: 2500 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,MOSFET gate driver; SO8; 0.3A; Ch: 1; 4÷36VDC
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Kind of integrated circuit: high-side; MOSFET gate driver
Voltage class: 40V
Supply voltage: 4...36V DC
Output current: 0.3A
Type of integrated circuit: driver
Number of channels: 1
кількість в упаковці: 2500 шт
товар відсутній
| AUIR3241STR |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,MOSFET gate driver; SO8; 625mW; Ch: 1; 40V
Type of integrated circuit: driver
Mounting: SMD
Number of channels: 1
Case: SO8
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of integrated circuit: high-side; MOSFET gate driver
Voltage class: 40V
Power: 625mW
Supply voltage: 3...36V DC
кількість в упаковці: 2500 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,MOSFET gate driver; SO8; 625mW; Ch: 1; 40V
Type of integrated circuit: driver
Mounting: SMD
Number of channels: 1
Case: SO8
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of integrated circuit: high-side; MOSFET gate driver
Voltage class: 40V
Power: 625mW
Supply voltage: 3...36V DC
кількість в упаковці: 2500 шт
товар відсутній
| AUIR3242SXUMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,MOSFET gate driver; SO8; 0.2A; Ch: 1; 3÷36VDC
Type of integrated circuit: driver
Kind of integrated circuit: high-side; MOSFET gate driver
Case: SO8
Output current: 0.2A
Number of channels: 1
Supply voltage: 3...36V DC
Mounting: SMD
Voltage class: 40V
кількість в упаковці: 2500 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,MOSFET gate driver; SO8; 0.2A; Ch: 1; 3÷36VDC
Type of integrated circuit: driver
Kind of integrated circuit: high-side; MOSFET gate driver
Case: SO8
Output current: 0.2A
Number of channels: 1
Supply voltage: 3...36V DC
Mounting: SMD
Voltage class: 40V
кількість в упаковці: 2500 шт
товар відсутній
| AUIR3314STRL |
|
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 18A; Ch: 1; N-Channel; SMD; D2PAK-5
Mounting: SMD
Case: D2PAK-5
Operating temperature: -40...150°C
Kind of package: reel
Number of channels: 1
Kind of output: N-Channel
Application: automotive industry
Power dissipation: 2W
Technology: Classic PROFET
Kind of integrated circuit: high-side
On-state resistance: 12mΩ
Output current: 18A
Type of integrated circuit: power switch
кількість в упаковці: 800 шт
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 18A; Ch: 1; N-Channel; SMD; D2PAK-5
Mounting: SMD
Case: D2PAK-5
Operating temperature: -40...150°C
Kind of package: reel
Number of channels: 1
Kind of output: N-Channel
Application: automotive industry
Power dissipation: 2W
Technology: Classic PROFET
Kind of integrated circuit: high-side
On-state resistance: 12mΩ
Output current: 18A
Type of integrated circuit: power switch
кількість в упаковці: 800 шт
товар відсутній
| AUIRF1010ZSTRL |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 94A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 94A
Power dissipation: 140W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 94A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 94A
Power dissipation: 140W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 800 шт
товар відсутній
| AUIRF1324S-7P |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 429A; 300W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 24V
Drain current: 429A
Power dissipation: 300W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 180nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 429A; 300W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 24V
Drain current: 429A
Power dissipation: 300W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 180nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| AUIRF1324STRL |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 340A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 24V
Drain current: 340A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 340A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 24V
Drain current: 340A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 800 шт
товар відсутній
| AUIRF1324WL |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 382A; 300W; TO262WL
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 24V
Drain current: 382A
Power dissipation: 300W
Case: TO262WL
Gate-source voltage: ±20V
On-state resistance: 1.16mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of channel: enhanced
кількість в упаковці: 1000 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 382A; 300W; TO262WL
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 24V
Drain current: 382A
Power dissipation: 300W
Case: TO262WL
Gate-source voltage: ±20V
On-state resistance: 1.16mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of channel: enhanced
кількість в упаковці: 1000 шт
товар відсутній