Продукція > WEEN SEMICONDUCTORS > Всі товари виробника WEEN SEMICONDUCTORS (6219) > Сторінка 15 з 104
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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BYV29D-600PJ | WeEn Semiconductors |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Current - Average Rectified (Io): 9A Supplier Device Package: DPAK Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 21779 шт: термін постачання 21-31 дні (днів) |
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BT153B-1200T-AJ | WeEn Semiconductors |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount SCR Type: Standard Recovery Operating Temperature: 150°C (TJ) Current - Hold (Ih) (Max): 80 mA Current - Gate Trigger (Igt) (Max): 50 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 350A, 385A Current - On State (It (AV)) (Max): 30 A Voltage - Gate Trigger (Vgt) (Max): 1 V Voltage - On State (Vtm) (Max): 1.3 V Current - Off State (Max): 2 mA Supplier Device Package: D2PAK Part Status: Active Current - On State (It (RMS)) (Max): 47 A Voltage - Off State: 1.2 kV |
товар відсутній |
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BT153B-1200T-AJ | WeEn Semiconductors |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount SCR Type: Standard Recovery Operating Temperature: 150°C (TJ) Current - Hold (Ih) (Max): 80 mA Current - Gate Trigger (Igt) (Max): 50 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 350A, 385A Current - On State (It (AV)) (Max): 30 A Voltage - Gate Trigger (Vgt) (Max): 1 V Voltage - On State (Vtm) (Max): 1.3 V Current - Off State (Max): 2 mA Supplier Device Package: D2PAK Part Status: Active Current - On State (It (RMS)) (Max): 47 A Voltage - Off State: 1.2 kV |
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BT137B-800G,118 | WeEn Semiconductors |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Triac Type: Standard Configuration: Single Operating Temperature: 125°C (TJ) Current - Hold (Ih) (Max): 40 mA Current - Gate Trigger (Igt) (Max): 50 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 65A, 71A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Supplier Device Package: D2PAK Part Status: Active Current - On State (It (RMS)) (Max): 8 A Voltage - Off State: 800 V |
на замовлення 4800 шт: термін постачання 21-31 дні (днів) |
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BT137B-800G,118 | WeEn Semiconductors |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Triac Type: Standard Configuration: Single Operating Temperature: 125°C (TJ) Current - Hold (Ih) (Max): 40 mA Current - Gate Trigger (Igt) (Max): 50 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 65A, 71A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Supplier Device Package: D2PAK Part Status: Active Current - On State (It (RMS)) (Max): 8 A Voltage - Off State: 800 V |
на замовлення 6143 шт: термін постачання 21-31 дні (днів) |
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NCR125W-125MX | WeEn Semiconductors |
![]() Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount SCR Type: Sensitive Gate Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 10 mA Current - Gate Trigger (Igt) (Max): 100 µA Current - Non Rep. Surge 50, 60Hz (Itsm): 20A, 22A Current - On State (It (AV)) (Max): 800 mA Voltage - Gate Trigger (Vgt) (Max): 800 mV Voltage - On State (Vtm) (Max): 1.5 V Current - Off State (Max): 1 mA Supplier Device Package: SC-73 Current - On State (It (RMS)) (Max): 1.25 A Voltage - Off State: 1.25 kV |
товар відсутній |
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NXPSC10650B6J | WeEn Semiconductors |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 300pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: D2PAK Operating Temperature - Junction: 175°C (Max) Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 250 µA @ 650 V |
на замовлення 1600 шт: термін постачання 21-31 дні (днів) |
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BTA2008W-800D,135 | WeEn Semiconductors |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: 125°C (TJ) Current - Hold (Ih) (Max): 10 mA Current - Gate Trigger (Igt) (Max): 5 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 9A, 9.9A Voltage - Gate Trigger (Vgt) (Max): 2 V Supplier Device Package: SC-73 Part Status: Active Current - On State (It (RMS)) (Max): 800 mA Voltage - Off State: 800 V |
на замовлення 16000 шт: термін постачання 21-31 дні (днів) |
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BTA2008W-800D,135 | WeEn Semiconductors |
![]() Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: 125°C (TJ) Current - Hold (Ih) (Max): 10 mA Current - Gate Trigger (Igt) (Max): 5 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 9A, 9.9A Voltage - Gate Trigger (Vgt) (Max): 2 V Supplier Device Package: SC-73 Part Status: Active Current - On State (It (RMS)) (Max): 800 mA Voltage - Off State: 800 V |
на замовлення 19619 шт: термін постачання 21-31 дні (днів) |
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BTA204X-800C/L03Q | WeEn Semiconductors |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab, Formed Leads Mounting Type: Through Hole Triac Type: Standard Configuration: Single Operating Temperature: 125°C (TJ) Current - Hold (Ih) (Max): 20 mA Current - Gate Trigger (Igt) (Max): 35 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27A Voltage - Gate Trigger (Vgt) (Max): 1 V Supplier Device Package: TO-220F Part Status: Active Current - On State (It (RMS)) (Max): 4 A Voltage - Off State: 800 V |
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BTA206X-800CT/L03Q | WeEn Semiconductors |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab, Formed Leads Mounting Type: Through Hole Triac Type: Standard Configuration: Single Operating Temperature: 150°C (TJ) Current - Hold (Ih) (Max): 35 mA Current - Gate Trigger (Igt) (Max): 35 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 60A, 66A Voltage - Gate Trigger (Vgt) (Max): 1 V Supplier Device Package: TO-220F Part Status: Active Current - On State (It (RMS)) (Max): 6 A Voltage - Off State: 800 V |
на замовлення 3593 шт: термін постачання 21-31 дні (днів) |
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BYC405X-400PQ | WeEn Semiconductors |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-220F Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
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BTA312X-600C,127 | WeEn Semiconductors |
![]() Packaging: Bulk Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Triac Type: Standard Configuration: Single Operating Temperature: 125°C (TJ) Current - Hold (Ih) (Max): 35 mA Current - Gate Trigger (Igt) (Max): 35 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 95A, 105A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Supplier Device Package: TO-220F Part Status: Active Current - On State (It (RMS)) (Max): 12 A Voltage - Off State: 600 V |
на замовлення 10641 шт: термін постачання 21-31 дні (днів) |
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NXPSC04650D6J | WeEn Semiconductors |
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на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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NXPSC04650B6J | WeEn Semiconductors |
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на замовлення 2400 шт: термін постачання 21-31 дні (днів) |
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NXPSC06650D6J | WeEn Semiconductors |
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на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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NXPSC08650D6J | WeEn Semiconductors |
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на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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NXPSC046506Q | WeEn Semiconductors |
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на замовлення 19200 шт: термін постачання 21-31 дні (днів) |
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NXPSC04650X6Q | WeEn Semiconductors |
![]() Packaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 130pF @ 1V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: TO-220F Operating Temperature - Junction: 175°C (Max) Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A Current - Reverse Leakage @ Vr: 170 µA @ 650 V |
на замовлення 326 шт: термін постачання 21-31 дні (днів) |
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NXPSC10650D6J | WeEn Semiconductors |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 300pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: DPAK Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 250 µA @ 650 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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NXPSC08650B6J | WeEn Semiconductors |
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на замовлення 2400 шт: термін постачання 21-31 дні (днів) |
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WNSC021200Q | WeEn Semiconductors |
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на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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NXPSC066506Q | WeEn Semiconductors |
![]() Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 190pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Current - Reverse Leakage @ Vr: 200 µA @ 650 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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NXPSC06650X6Q | WeEn Semiconductors |
![]() Packaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 190pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: TO-220F Operating Temperature - Junction: 175°C (Max) Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Current - Reverse Leakage @ Vr: 200 µA @ 650 V |
на замовлення 2855 шт: термін постачання 21-31 дні (днів) |
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NXPSC086506Q | WeEn Semiconductors |
![]() Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 260pF @ 1V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 230 µA @ 650 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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NXPSC166506Q | WeEn Semiconductors |
![]() Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 534pF @ 1V, 1MHz Current - Average Rectified (Io): 16A Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C (Max) Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A Current - Reverse Leakage @ Vr: 100 µA @ 650 V |
на замовлення 3003 шт: термін постачання 21-31 дні (днів) |
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EC103D1WX | WeEn Semiconductors |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount SCR Type: Sensitive Gate Operating Temperature: 125°C (TJ) Current - Hold (Ih) (Max): 5 mA Current - Gate Trigger (Igt) (Max): 12 µA Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 9A Current - On State (It (AV)) (Max): 500 mA Voltage - Gate Trigger (Vgt) (Max): 800 mV Voltage - On State (Vtm) (Max): 1.35 V Current - Off State (Max): 100 µA Supplier Device Package: SC-73 Part Status: Active Current - On State (It (RMS)) (Max): 800 mA Voltage - Off State: 400 V |
на замовлення 28000 шт: термін постачання 21-31 дні (днів) |
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EC103D1WX | WeEn Semiconductors |
![]() Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount SCR Type: Sensitive Gate Operating Temperature: 125°C (TJ) Current - Hold (Ih) (Max): 5 mA Current - Gate Trigger (Igt) (Max): 12 µA Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 9A Current - On State (It (AV)) (Max): 500 mA Voltage - Gate Trigger (Vgt) (Max): 800 mV Voltage - On State (Vtm) (Max): 1.35 V Current - Off State (Max): 100 µA Supplier Device Package: SC-73 Part Status: Active Current - On State (It (RMS)) (Max): 800 mA Voltage - Off State: 400 V |
на замовлення 29703 шт: термін постачання 21-31 дні (днів) |
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EC103D1,116 | WeEn Semiconductors |
![]() Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole SCR Type: Sensitive Gate Current - Hold (Ih) (Max): 5 mA Current - Gate Trigger (Igt) (Max): 12 µA Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 9A Current - On State (It (AV)) (Max): 500 mA Voltage - Gate Trigger (Vgt) (Max): 800 mV Voltage - On State (Vtm) (Max): 1.35 V Current - Off State (Max): 100 µA Supplier Device Package: TO-92-3 Current - On State (It (RMS)) (Max): 800 mA Voltage - Off State: 400 V |
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BYC60W-600PQ | WeEn Semiconductors |
![]() Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 60A Supplier Device Package: TO-247-2 Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 60 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 2567 шт: термін постачання 21-31 дні (днів) |
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BYC20D-600PQ | WeEn Semiconductors |
![]() Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
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ACT108W-800EF | WeEn Semiconductors |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: 125°C (TJ) Current - Hold (Ih) (Max): 20 mA Current - Gate Trigger (Igt) (Max): 10 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 13A, 14.3A Voltage - Gate Trigger (Vgt) (Max): 1 V Supplier Device Package: SC-73 Part Status: Active Current - On State (It (RMS)) (Max): 800 mA Voltage - Off State: 800 V |
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ACT108W-800EF | WeEn Semiconductors |
![]() Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: 125°C (TJ) Current - Hold (Ih) (Max): 20 mA Current - Gate Trigger (Igt) (Max): 10 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 13A, 14.3A Voltage - Gate Trigger (Vgt) (Max): 1 V Supplier Device Package: SC-73 Part Status: Active Current - On State (It (RMS)) (Max): 800 mA Voltage - Off State: 800 V |
на замовлення 6097 шт: термін постачання 21-31 дні (днів) |
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TYN16S-600CTJ | WeEn Semiconductors |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount SCR Type: Standard Recovery Operating Temperature: 150°C (TJ) Current - Hold (Ih) (Max): 40 mA Current - Gate Trigger (Igt) (Max): 6 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 180A, 198A Current - On State (It (AV)) (Max): 10.2 A Voltage - Gate Trigger (Vgt) (Max): 1.3 V Voltage - On State (Vtm) (Max): 1.6 V Current - Off State (Max): 1 mA Supplier Device Package: DPAK Current - On State (It (RMS)) (Max): 16 A Voltage - Off State: 600 V |
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NCR100-8LR | WeEn Semiconductors |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount SCR Type: Sensitive Gate Operating Temperature: 125°C (TJ) Current - Hold (Ih) (Max): 3 mA Current - Gate Trigger (Igt) (Max): 50 µA Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 9A Current - On State (It (AV)) (Max): 500 mA Voltage - Gate Trigger (Vgt) (Max): 800 mV Voltage - On State (Vtm) (Max): 1.7 V Current - Off State (Max): 100 µA Supplier Device Package: SOT-23-3L Current - On State (It (RMS)) (Max): 800 mA Voltage - Off State: 600 V |
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NCR100-8MR | WeEn Semiconductors |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount SCR Type: Sensitive Gate Operating Temperature: 125°C (TJ) Current - Hold (Ih) (Max): 3 mA Current - Gate Trigger (Igt) (Max): 100 µA Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 9A Current - On State (It (AV)) (Max): 500 mA Voltage - Gate Trigger (Vgt) (Max): 800 mV Voltage - On State (Vtm) (Max): 1.7 V Current - Off State (Max): 100 µA Supplier Device Package: SOT-23-3L Current - On State (It (RMS)) (Max): 800 mA Voltage - Off State: 600 V |
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NXPSC126506Q | WeEn Semiconductors |
![]() Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 380pF @ 1V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A Current - Reverse Leakage @ Vr: 80 µA @ 650 V |
на замовлення 990 шт: термін постачання 21-31 дні (днів) |
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WNSC06650T6J | WeEn Semiconductors |
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WNSC08650T6J | WeEn Semiconductors |
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WNSC10650T6J | WeEn Semiconductors |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 328pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: 5-DFN (8x8) Operating Temperature - Junction: 175°C (Max) Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 60 µA @ 650 V |
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BTA416X-800BTQ | WeEn Semiconductors |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: 150°C (TJ) Current - Hold (Ih) (Max): 60 mA Current - Gate Trigger (Igt) (Max): 50 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 160A, 176A Voltage - Gate Trigger (Vgt) (Max): 1 V Supplier Device Package: TO-220F Part Status: Active Current - On State (It (RMS)) (Max): 16 A Voltage - Off State: 800 V |
на замовлення 1715 шт: термін постачання 21-31 дні (днів) |
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BTA416X-800CTQ | WeEn Semiconductors |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: 150°C (TJ) Current - Hold (Ih) (Max): 35 mA Current - Gate Trigger (Igt) (Max): 35 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 160A, 176A Voltage - Gate Trigger (Vgt) (Max): 1 V Supplier Device Package: TO-220F Part Status: Active Current - On State (It (RMS)) (Max): 16 A Voltage - Off State: 800 V |
на замовлення 6984 шт: термін постачання 21-31 дні (днів) |
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BYC30-600P,127 | WeEn Semiconductors |
![]() Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V Current Coupled to Voltage - Forward (Vf) (Max) @ If: 30 Voltage Coupled to Current - Reverse Leakage @ Vr: 600 |
на замовлення 7905 шт: термін постачання 21-31 дні (днів) |
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BYC30-1200PQ | WeEn Semiconductors |
![]() Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 65 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 1200 V |
товар відсутній |
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BYC30W-1200PQ | WeEn Semiconductors |
![]() Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 65 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-247-2 Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A Current - Reverse Leakage @ Vr: 250 µA @ 1200 V |
на замовлення 441 шт: термін постачання 21-31 дні (днів) |
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BYC30DW-600PQ | WeEn Semiconductors |
![]() Packaging: Bulk Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 33 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-247-2 Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товар відсутній |
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BYC30W-600PT2Q | WeEn Semiconductors |
![]() Packaging: Bulk Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 34 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-247-2 Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.75 V @ 30 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 1789 шт: термін постачання 21-31 дні (днів) |
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NCR100W-12LX | WeEn Semiconductors |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount SCR Type: Sensitive Gate Operating Temperature: 125°C (TJ) Current - Hold (Ih) (Max): 3 mA Current - Gate Trigger (Igt) (Max): 50 µA Current - Non Rep. Surge 50, 60Hz (Itsm): 11A, 12.1A Current - On State (It (AV)) (Max): 800 mA Voltage - Gate Trigger (Vgt) (Max): 800 mV Voltage - On State (Vtm) (Max): 1.7 V Current - Off State (Max): 1 mA Supplier Device Package: SC-73 Current - On State (It (RMS)) (Max): 1.1 A Voltage - Off State: 1 kV |
товар відсутній |
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NCR100W-12MX | WeEn Semiconductors |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount SCR Type: Sensitive Gate Operating Temperature: 125°C (TJ) Current - Hold (Ih) (Max): 3 mA Current - Gate Trigger (Igt) (Max): 100 µA Current - Non Rep. Surge 50, 60Hz (Itsm): 11A, 12.1A Current - On State (It (AV)) (Max): 800 mA Voltage - Gate Trigger (Vgt) (Max): 800 mV Voltage - On State (Vtm) (Max): 1.7 V Current - Off State (Max): 1 mA Supplier Device Package: SC-73 Current - On State (It (RMS)) (Max): 1.1 A Voltage - Off State: 1 kV |
товар відсутній |
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BYV10ED-600PJ | WeEn Semiconductors |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: DPAK Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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NXPSC04650D6J | WeEn Semiconductors |
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на замовлення 16439 шт: термін постачання 21-31 дні (днів) |
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NXPSC04650B6J | WeEn Semiconductors |
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на замовлення 3154 шт: термін постачання 21-31 дні (днів) |
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NXPSC10650D6J | WeEn Semiconductors |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 300pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: DPAK Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 250 µA @ 650 V |
на замовлення 7204 шт: термін постачання 21-31 дні (днів) |
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NXPSC10650B6J | WeEn Semiconductors |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 300pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: D2PAK Operating Temperature - Junction: 175°C (Max) Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 250 µA @ 650 V |
на замовлення 2290 шт: термін постачання 21-31 дні (днів) |
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NXPSC106506Q | WeEn Semiconductors |
![]() Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 300pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 250 µA @ 650 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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NXPSC10650X6Q | WeEn Semiconductors |
![]() Packaging: Bulk Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 300pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-220F Operating Temperature - Junction: 175°C (Max) Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 250 µA @ 650 V |
на замовлення 2995 шт: термін постачання 21-31 дні (днів) |
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NXPSC10650Q | WeEn Semiconductors |
![]() Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 300pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C (Max) Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 250 µA @ 650 V |
на замовлення 1941 шт: термін постачання 21-31 дні (днів) |
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WNSC10650WQ | WeEn Semiconductors |
![]() Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 328pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-247-2 Operating Temperature - Junction: 175°C Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 60 µA @ 650 V |
товар відсутній |
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NUR460/L03,112 | WeEn Semiconductors |
![]() Packaging: Tube Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 65 ns Technology: Standard Current - Average Rectified (Io): 4A Supplier Device Package: DO-201AD Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
товар відсутній |
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NUR460P,133 | WeEn Semiconductors |
![]() Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Current - Average Rectified (Io): 4A Supplier Device Package: DO-201AD Operating Temperature - Junction: 175°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товар відсутній |
BYV29D-600PJ |
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Виробник: WeEn Semiconductors
Description: DIODE GEN PURP 600V 9A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 9A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 9A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 9A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 21779 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 43.34 грн |
10+ | 36.53 грн |
100+ | 25.26 грн |
500+ | 19.8 грн |
1000+ | 16.85 грн |
BT153B-1200T-AJ |
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Виробник: WeEn Semiconductors
Description: SCR 1.2KV 47A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 80 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 350A, 385A
Current - On State (It (AV)) (Max): 30 A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 1.3 V
Current - Off State (Max): 2 mA
Supplier Device Package: D2PAK
Part Status: Active
Current - On State (It (RMS)) (Max): 47 A
Voltage - Off State: 1.2 kV
Description: SCR 1.2KV 47A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 80 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 350A, 385A
Current - On State (It (AV)) (Max): 30 A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 1.3 V
Current - Off State (Max): 2 mA
Supplier Device Package: D2PAK
Part Status: Active
Current - On State (It (RMS)) (Max): 47 A
Voltage - Off State: 1.2 kV
товар відсутній
BT153B-1200T-AJ |
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Виробник: WeEn Semiconductors
Description: SCR 1.2KV 47A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 80 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 350A, 385A
Current - On State (It (AV)) (Max): 30 A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 1.3 V
Current - Off State (Max): 2 mA
Supplier Device Package: D2PAK
Part Status: Active
Current - On State (It (RMS)) (Max): 47 A
Voltage - Off State: 1.2 kV
Description: SCR 1.2KV 47A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 80 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 350A, 385A
Current - On State (It (AV)) (Max): 30 A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 1.3 V
Current - Off State (Max): 2 mA
Supplier Device Package: D2PAK
Part Status: Active
Current - On State (It (RMS)) (Max): 47 A
Voltage - Off State: 1.2 kV
товар відсутній
BT137B-800G,118 |
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Виробник: WeEn Semiconductors
Description: TRIAC 800V 8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Standard
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 65A, 71A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: D2PAK
Part Status: Active
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 800 V
Description: TRIAC 800V 8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Standard
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 65A, 71A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: D2PAK
Part Status: Active
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 800 V
на замовлення 4800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
800+ | 29.22 грн |
1600+ | 23.95 грн |
2400+ | 21.33 грн |
BT137B-800G,118 |
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Виробник: WeEn Semiconductors
Description: TRIAC 800V 8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Standard
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 65A, 71A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: D2PAK
Part Status: Active
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 800 V
Description: TRIAC 800V 8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Standard
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 65A, 71A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: D2PAK
Part Status: Active
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 800 V
на замовлення 6143 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 57.78 грн |
10+ | 48.61 грн |
100+ | 33.68 грн |
NCR125W-125MX |
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Виробник: WeEn Semiconductors
Description: SCR 1.25KV 1.25A SC73
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 10 mA
Current - Gate Trigger (Igt) (Max): 100 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 20A, 22A
Current - On State (It (AV)) (Max): 800 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.5 V
Current - Off State (Max): 1 mA
Supplier Device Package: SC-73
Current - On State (It (RMS)) (Max): 1.25 A
Voltage - Off State: 1.25 kV
Description: SCR 1.25KV 1.25A SC73
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 10 mA
Current - Gate Trigger (Igt) (Max): 100 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 20A, 22A
Current - On State (It (AV)) (Max): 800 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.5 V
Current - Off State (Max): 1 mA
Supplier Device Package: SC-73
Current - On State (It (RMS)) (Max): 1.25 A
Voltage - Off State: 1.25 kV
товар відсутній
NXPSC10650B6J |
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Виробник: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
800+ | 254.58 грн |
1600+ | 209.91 грн |
BTA2008W-800D,135 |
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Виробник: WeEn Semiconductors
Description: TRIAC SENS GATE 800V 0.8A SC73
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 10 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9A, 9.9A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 800 V
Description: TRIAC SENS GATE 800V 0.8A SC73
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 10 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9A, 9.9A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 800 V
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4000+ | 10.58 грн |
BTA2008W-800D,135 |
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Виробник: WeEn Semiconductors
Description: TRIAC SENS GATE 800V 0.8A SC73
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 10 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9A, 9.9A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 800 V
Description: TRIAC SENS GATE 800V 0.8A SC73
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 10 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9A, 9.9A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 800 V
на замовлення 19619 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 38.02 грн |
10+ | 30.75 грн |
100+ | 21.4 грн |
500+ | 15.68 грн |
1000+ | 12.75 грн |
2000+ | 11.39 грн |
BTA204X-800C/L03Q |
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Виробник: WeEn Semiconductors
Description: TRIAC 800V 4A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab, Formed Leads
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220F
Part Status: Active
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 800 V
Description: TRIAC 800V 4A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab, Formed Leads
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220F
Part Status: Active
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 800 V
товар відсутній
BTA206X-800CT/L03Q |
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Виробник: WeEn Semiconductors
Description: TRIAC 800V 6A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab, Formed Leads
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 35 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 60A, 66A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220F
Part Status: Active
Current - On State (It (RMS)) (Max): 6 A
Voltage - Off State: 800 V
Description: TRIAC 800V 6A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab, Formed Leads
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 35 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 60A, 66A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220F
Part Status: Active
Current - On State (It (RMS)) (Max): 6 A
Voltage - Off State: 800 V
на замовлення 3593 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 41.06 грн |
50+ | 32.61 грн |
100+ | 23.67 грн |
500+ | 18.56 грн |
1000+ | 17.38 грн |
BYC405X-400PQ |
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Виробник: WeEn Semiconductors
Description: DIODE GEN PURP 400V 10A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE GEN PURP 400V 10A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
BTA312X-600C,127 |
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Виробник: WeEn Semiconductors
Description: TRIAC 600V 12A TO220F
Packaging: Bulk
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 35 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 95A, 105A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: TO-220F
Part Status: Active
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
Description: TRIAC 600V 12A TO220F
Packaging: Bulk
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 35 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 95A, 105A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: TO-220F
Part Status: Active
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
на замовлення 10641 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
600+ | 34.97 грн |
NXPSC04650D6J |
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Виробник: WeEn Semiconductors
Description: DIODE SCHOTTKY 650V 4A DPAK
Description: DIODE SCHOTTKY 650V 4A DPAK
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 101.98 грн |
NXPSC04650B6J |
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Виробник: WeEn Semiconductors
Description: DIODE SCHOTTKY 650V 4A D2PAK
Description: DIODE SCHOTTKY 650V 4A D2PAK
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
800+ | 128.83 грн |
1600+ | 103.24 грн |
NXPSC06650D6J |
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Виробник: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 6A DPAK
Description: DIODE SIL CARBIDE 650V 6A DPAK
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 150.15 грн |
NXPSC08650D6J |
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Виробник: WeEn Semiconductors
Description: DIODE SCHOTTKY 650V 8A DPAK
Description: DIODE SCHOTTKY 650V 8A DPAK
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 206.58 грн |
NXPSC046506Q |
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Виробник: WeEn Semiconductors
Description: DIODE SCHOTTKY 650V 4A TO220AC
Description: DIODE SCHOTTKY 650V 4A TO220AC
на замовлення 19200 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 211.36 грн |
10+ | 183.26 грн |
100+ | 147.31 грн |
500+ | 113.59 грн |
1000+ | 94.52 грн |
NXPSC04650X6Q |
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Виробник: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 4A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 170 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 4A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 170 µA @ 650 V
на замовлення 326 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 203 грн |
10+ | 175.86 грн |
100+ | 141.35 грн |
NXPSC10650D6J |
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Виробник: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 201.19 грн |
NXPSC08650B6J |
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Виробник: WeEn Semiconductors
Description: DIODE SCHOTTKY 650V 8A D2PAK
Description: DIODE SCHOTTKY 650V 8A D2PAK
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
800+ | 241.43 грн |
1600+ | 203.96 грн |
WNSC021200Q |
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Виробник: WeEn Semiconductors
Description: SILICON CARBIDE POWER DIODE
Description: SILICON CARBIDE POWER DIODE
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)NXPSC066506Q |
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Виробник: WeEn Semiconductors
Description: DIODE SIL CARB 650V 6A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 190pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Description: DIODE SIL CARB 650V 6A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 190pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 268.39 грн |
10+ | 232.31 грн |
100+ | 190.34 грн |
500+ | 152.06 грн |
1000+ | 128.24 грн |
2000+ | 121.83 грн |
NXPSC06650X6Q |
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Виробник: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 6A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 190pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 6A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 190pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
на замовлення 2855 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 285.11 грн |
10+ | 246.81 грн |
100+ | 202.2 грн |
500+ | 161.53 грн |
1000+ | 141.71 грн |
NXPSC086506Q |
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Виробник: WeEn Semiconductors
Description: DIODE SIL CARB 650V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 260pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 230 µA @ 650 V
Description: DIODE SIL CARB 650V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 260pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 230 µA @ 650 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 341.38 грн |
10+ | 295.42 грн |
100+ | 242.09 грн |
500+ | 193.4 грн |
1000+ | 169.67 грн |
NXPSC166506Q |
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Виробник: WeEn Semiconductors
Description: DIODE SIL CARB 650V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 534pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Description: DIODE SIL CARB 650V 16A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 534pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
на замовлення 3003 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 450.1 грн |
10+ | 371.34 грн |
100+ | 309.47 грн |
500+ | 256.26 грн |
1000+ | 230.63 грн |
2000+ | 216.11 грн |
EC103D1WX |
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Виробник: WeEn Semiconductors
Description: SCR 400V 800MA SC73
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 12 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 9A
Current - On State (It (AV)) (Max): 500 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.35 V
Current - Off State (Max): 100 µA
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 400 V
Description: SCR 400V 800MA SC73
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 12 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 9A
Current - On State (It (AV)) (Max): 500 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.35 V
Current - Off State (Max): 100 µA
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 400 V
на замовлення 28000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1000+ | 6.34 грн |
EC103D1WX |
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Виробник: WeEn Semiconductors
Description: SCR 400V 800MA SC73
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 12 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 9A
Current - On State (It (AV)) (Max): 500 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.35 V
Current - Off State (Max): 100 µA
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 400 V
Description: SCR 400V 800MA SC73
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 12 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 9A
Current - On State (It (AV)) (Max): 500 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.35 V
Current - Off State (Max): 100 µA
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 400 V
на замовлення 29703 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 29.65 грн |
14+ | 22.18 грн |
100+ | 13.31 грн |
500+ | 11.57 грн |
EC103D1,116 |
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Виробник: WeEn Semiconductors
Description: SCR 400V 800MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 12 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 9A
Current - On State (It (AV)) (Max): 500 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.35 V
Current - Off State (Max): 100 µA
Supplier Device Package: TO-92-3
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 400 V
Description: SCR 400V 800MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 12 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 9A
Current - On State (It (AV)) (Max): 500 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.35 V
Current - Off State (Max): 100 µA
Supplier Device Package: TO-92-3
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 400 V
товар відсутній
BYC60W-600PQ |
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Виробник: WeEn Semiconductors
Description: DIODE GEN PURP 600V 60A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 60A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 2567 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 227.33 грн |
30+ | 173.47 грн |
120+ | 148.69 грн |
510+ | 124.03 грн |
1020+ | 106.2 грн |
2010+ | 100 грн |
BYC20D-600PQ |
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Виробник: WeEn Semiconductors
Description: DIODE GEN PURP 600V 20A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 20A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
ACT108W-800EF |
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Виробник: WeEn Semiconductors
Description: TRIAC SENS GATE 800V 0.8A SC73
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 13A, 14.3A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 800 V
Description: TRIAC SENS GATE 800V 0.8A SC73
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 13A, 14.3A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 800 V
товар відсутній
ACT108W-800EF |
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Виробник: WeEn Semiconductors
Description: TRIAC SENS GATE 800V 0.8A SC73
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 13A, 14.3A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 800 V
Description: TRIAC SENS GATE 800V 0.8A SC73
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 13A, 14.3A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 800 V
на замовлення 6097 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 38.02 грн |
10+ | 31.34 грн |
100+ | 21.77 грн |
500+ | 15.95 грн |
1000+ | 12.96 грн |
2000+ | 11.59 грн |
TYN16S-600CTJ |
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Виробник: WeEn Semiconductors
Description: SCR 600V 16A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 6 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 180A, 198A
Current - On State (It (AV)) (Max): 10.2 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 1 mA
Supplier Device Package: DPAK
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 600 V
Description: SCR 600V 16A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 6 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 180A, 198A
Current - On State (It (AV)) (Max): 10.2 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 1 mA
Supplier Device Package: DPAK
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 600 V
товар відсутній
NCR100-8LR |
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Виробник: WeEn Semiconductors
Description: SCR 600V 800MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 3 mA
Current - Gate Trigger (Igt) (Max): 50 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 9A
Current - On State (It (AV)) (Max): 500 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 100 µA
Supplier Device Package: SOT-23-3L
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 600 V
Description: SCR 600V 800MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 3 mA
Current - Gate Trigger (Igt) (Max): 50 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 9A
Current - On State (It (AV)) (Max): 500 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 100 µA
Supplier Device Package: SOT-23-3L
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 600 V
товар відсутній
NCR100-8MR |
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Виробник: WeEn Semiconductors
Description: SCR 600V 800MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 3 mA
Current - Gate Trigger (Igt) (Max): 100 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 9A
Current - On State (It (AV)) (Max): 500 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 100 µA
Supplier Device Package: SOT-23-3L
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 600 V
Description: SCR 600V 800MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 3 mA
Current - Gate Trigger (Igt) (Max): 100 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 9A
Current - On State (It (AV)) (Max): 500 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 100 µA
Supplier Device Package: SOT-23-3L
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 600 V
товар відсутній
NXPSC126506Q |
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Виробник: WeEn Semiconductors
Description: DIODE SIL CARB 650V 12A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 380pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
Description: DIODE SIL CARB 650V 12A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 380pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
на замовлення 990 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 432.61 грн |
10+ | 349.67 грн |
100+ | 282.87 грн |
500+ | 235.97 грн |
WNSC06650T6J |
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Виробник: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 6A 5DFN
Description: DIODE SIL CARBIDE 650V 6A 5DFN
товар відсутній
WNSC10650T6J |
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Виробник: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 10A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 328pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: 5-DFN (8x8)
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 10A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 328pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: 5-DFN (8x8)
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
товар відсутній
BTA416X-800BTQ |
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Виробник: WeEn Semiconductors
Description: TRIAC SENS GATE 800V 16A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 160A, 176A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220F
Part Status: Active
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 800 V
Description: TRIAC SENS GATE 800V 16A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 160A, 176A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220F
Part Status: Active
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 800 V
на замовлення 1715 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 44.86 грн |
50+ | 34.85 грн |
100+ | 27.62 грн |
500+ | 21.97 грн |
1000+ | 21.73 грн |
BTA416X-800CTQ |
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Виробник: WeEn Semiconductors
Description: TRIAC SENS GATE 800V 16A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 35 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 160A, 176A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220F
Part Status: Active
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 800 V
Description: TRIAC SENS GATE 800V 16A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 35 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 160A, 176A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220F
Part Status: Active
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 800 V
на замовлення 6984 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 44.86 грн |
50+ | 34.85 грн |
100+ | 27.62 грн |
500+ | 21.97 грн |
1000+ | 21.73 грн |
BYC30-600P,127 |
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Виробник: WeEn Semiconductors
Description: DIODE GEN PURP 600V 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 30
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Description: DIODE GEN PURP 600V 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 30
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
на замовлення 7905 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 134.57 грн |
50+ | 104.05 грн |
100+ | 85.61 грн |
500+ | 72.53 грн |
BYC30-1200PQ |
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Виробник: WeEn Semiconductors
Description: DIODE GEN PURP 1.2KV 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Description: DIODE GEN PURP 1.2KV 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
товар відсутній
BYC30W-1200PQ |
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Виробник: WeEn Semiconductors
Description: DIODE GEN PURP 1.2KV 30A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Description: DIODE GEN PURP 1.2KV 30A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
на замовлення 441 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 209.84 грн |
30+ | 162.44 грн |
120+ | 133.67 грн |
BYC30DW-600PQ |
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Виробник: WeEn Semiconductors
Description: DIODE GEN PURP 600V 30A TO247-2
Packaging: Bulk
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 33 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 30A TO247-2
Packaging: Bulk
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 33 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
BYC30W-600PT2Q |
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Виробник: WeEn Semiconductors
Description: DIODE GEN PURP 600V 30A TO247-2
Packaging: Bulk
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 34 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.75 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 30A TO247-2
Packaging: Bulk
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 34 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.75 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 1789 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 162.7 грн |
10+ | 130.61 грн |
450+ | 87.96 грн |
1350+ | 70.04 грн |
NCR100W-12LX |
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Виробник: WeEn Semiconductors
Description: SCR 1KV 1.1A SC73
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 3 mA
Current - Gate Trigger (Igt) (Max): 50 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 11A, 12.1A
Current - On State (It (AV)) (Max): 800 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 1 mA
Supplier Device Package: SC-73
Current - On State (It (RMS)) (Max): 1.1 A
Voltage - Off State: 1 kV
Description: SCR 1KV 1.1A SC73
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 3 mA
Current - Gate Trigger (Igt) (Max): 50 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 11A, 12.1A
Current - On State (It (AV)) (Max): 800 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 1 mA
Supplier Device Package: SC-73
Current - On State (It (RMS)) (Max): 1.1 A
Voltage - Off State: 1 kV
товар відсутній
NCR100W-12MX |
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Виробник: WeEn Semiconductors
Description: SCR 1KV 1.1A SC73
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 3 mA
Current - Gate Trigger (Igt) (Max): 100 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 11A, 12.1A
Current - On State (It (AV)) (Max): 800 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 1 mA
Supplier Device Package: SC-73
Current - On State (It (RMS)) (Max): 1.1 A
Voltage - Off State: 1 kV
Description: SCR 1KV 1.1A SC73
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 3 mA
Current - Gate Trigger (Igt) (Max): 100 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 11A, 12.1A
Current - On State (It (AV)) (Max): 800 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 1 mA
Supplier Device Package: SC-73
Current - On State (It (RMS)) (Max): 1.1 A
Voltage - Off State: 1 kV
товар відсутній
BYV10ED-600PJ |
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Виробник: WeEn Semiconductors
Description: DIODE GEN PURP 600V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 22.45 грн |
NXPSC04650D6J |
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Виробник: WeEn Semiconductors
Description: DIODE SCHOTTKY 650V 4A DPAK
Description: DIODE SCHOTTKY 650V 4A DPAK
на замовлення 16439 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 206.8 грн |
10+ | 178.72 грн |
100+ | 143.63 грн |
500+ | 110.74 грн |
1000+ | 92.16 грн |
NXPSC04650B6J |
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Виробник: WeEn Semiconductors
Description: DIODE SCHOTTKY 650V 4A D2PAK
Description: DIODE SCHOTTKY 650V 4A D2PAK
на замовлення 3154 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 217.45 грн |
10+ | 187.87 грн |
100+ | 151 грн |
NXPSC10650D6J |
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Виробник: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
на замовлення 7204 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 413.6 грн |
10+ | 334.22 грн |
100+ | 270.33 грн |
500+ | 225.51 грн |
1000+ | 193.09 грн |
NXPSC10650B6J |
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Виробник: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
на замовлення 2290 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 421.97 грн |
10+ | 340.89 грн |
100+ | 275.79 грн |
NXPSC106506Q |
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Виробник: WeEn Semiconductors
Description: DIODE SIL CARB 650V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
Description: DIODE SIL CARB 650V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 293.48 грн |
50+ | 223.95 грн |
100+ | 191.95 грн |
500+ | 176.2 грн |
NXPSC10650X6Q |
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Виробник: WeEn Semiconductors
Description: DIODE SIL CARB 650V 10A TO220F
Packaging: Bulk
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
Description: DIODE SIL CARB 650V 10A TO220F
Packaging: Bulk
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
на замовлення 2995 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 417.41 грн |
10+ | 337.52 грн |
100+ | 273.06 грн |
500+ | 227.78 грн |
1000+ | 195.04 грн |
2000+ | 183.65 грн |
NXPSC10650Q |
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Виробник: WeEn Semiconductors
Description: DIODE SIL CARB 650V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
Description: DIODE SIL CARB 650V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
на замовлення 1941 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 266.87 грн |
10+ | 215.76 грн |
100+ | 174.51 грн |
500+ | 160.18 грн |
WNSC10650WQ |
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Виробник: WeEn Semiconductors
Description: DIODE SIL CARB 650V 10A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 328pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Description: DIODE SIL CARB 650V 10A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 328pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
товар відсутній
NUR460/L03,112 |
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Виробник: WeEn Semiconductors
Description: DIODE GEN PURP 600V 4A DO201AD
Packaging: Tube
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE GEN PURP 600V 4A DO201AD
Packaging: Tube
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товар відсутній
NUR460P,133 |
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Виробник: WeEn Semiconductors
Description: DIODE GEN PURP 600V 4A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 4A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній