Продукція > WEEN SEMICONDUCTORS > Всі товари виробника WEEN SEMICONDUCTORS (6294) > Сторінка 19 з 105
Фото | Назва | Виробник | Інформація |
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BYV42EB-200,118 | WeEn Semiconductors |
Description: DIODE ARRAY GP 200V 30A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 28 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: D2PAK Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A Current - Reverse Leakage @ Vr: 100 µA @ 200 V |
на замовлення 10977 шт: термін постачання 21-31 дні (днів) |
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WNSC2D04650Q | WeEn Semiconductors |
Description: DIODE SIL CARB 650V 4A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 125pF @ 1V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V |
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WNSC2D06650Q | WeEn Semiconductors |
Description: DIODE SIL CARB 650V 6A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 198pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Current - Reverse Leakage @ Vr: 30 µA @ 650 V |
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WNSC2D10650Q | WeEn Semiconductors |
Description: DIODE SIL CARB 650V 10A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 310pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
на замовлення 995 шт: термін постачання 21-31 дні (днів) |
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TYN30Y-600TFQ | WeEn Semiconductors |
Description: PLANAR PASSIVATED SILICON CONTRO Packaging: Tube Package / Case: TO-220-3 Isolated Tab Mounting Type: Through Hole SCR Type: Standard Recovery Operating Temperature: 150°C (TJ) Current - Hold (Ih) (Max): 40 mA Current - Gate Trigger (Igt) (Max): 10 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 360A, 396A Current - On State (It (AV)) (Max): 19 A Voltage - Gate Trigger (Vgt) (Max): 1 V Voltage - On State (Vtm) (Max): 1.5 V Current - Off State (Max): 10 µA Supplier Device Package: TO-220AB Part Status: Active Current - On State (It (RMS)) (Max): 30 A Voltage - Off State: 600 V |
на замовлення 6956 шт: термін постачання 21-31 дні (днів) |
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WNSC6D20650CW6Q | WeEn Semiconductors |
Description: DIODE ARR SIC 650V 20A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-247-3 Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
на замовлення 465 шт: термін постачання 21-31 дні (днів) |
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BT148-400R,127 | WeEn Semiconductors |
Description: SCR 400V 4A SOT82-3 Packaging: Tube Package / Case: SOT-82 Mounting Type: Through Hole SCR Type: Sensitive Gate Operating Temperature: -40°C ~ 125°C Current - Hold (Ih) (Max): 6 mA Current - Gate Trigger (Igt) (Max): 200 µA Current - Non Rep. Surge 50, 60Hz (Itsm): 35A, 38A Current - On State (It (AV)) (Max): 2.5 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Voltage - On State (Vtm) (Max): 1.8 V Current - Off State (Max): 500 µA Supplier Device Package: SOT-82-3 Part Status: Active Current - On State (It (RMS)) (Max): 4 A Voltage - Off State: 400 V |
на замовлення 4827 шт: термін постачання 21-31 дні (днів) |
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ACT108-800EQP | WeEn Semiconductors |
Description: TRIAC SENS GATE 800V 0.8A TO92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: 125°C (TJ) Current - Hold (Ih) (Max): 20 mA Current - Gate Trigger (Igt) (Max): 10 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 13A, 14.3A Voltage - Gate Trigger (Vgt) (Max): 1 V Supplier Device Package: TO-92-3 Part Status: Active Current - On State (It (RMS)) (Max): 800 mA Voltage - Off State: 800 V |
на замовлення 9974 шт: термін постачання 21-31 дні (днів) |
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WNSC2D06650DJ | WeEn Semiconductors |
Description: DIODE SIL CARBIDE 650V 6A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 198pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: DPAK Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Current - Reverse Leakage @ Vr: 30 µA @ 650 V |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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WNSC2D06650DJ | WeEn Semiconductors |
Description: DIODE SIL CARBIDE 650V 6A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 198pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: DPAK Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Current - Reverse Leakage @ Vr: 30 µA @ 650 V |
на замовлення 12198 шт: термін постачання 21-31 дні (днів) |
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WNSC2D06650XQ | WeEn Semiconductors |
Description: DIODE SIL CARBIDE 650V 6A TO220F Packaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 198pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: TO-220F Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Current - Reverse Leakage @ Vr: 30 µA @ 650 V |
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WNSC2D06650TJ | WeEn Semiconductors |
Description: DIODE SIL CARBIDE 650V 6A 5DFN Packaging: Tape & Reel (TR) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 198pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: 5-DFN (8x8) Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Current - Reverse Leakage @ Vr: 30 µA @ 650 V |
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WNSC2D06650TJ | WeEn Semiconductors |
Description: DIODE SIL CARBIDE 650V 6A 5DFN Packaging: Cut Tape (CT) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 198pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: 5-DFN (8x8) Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Current - Reverse Leakage @ Vr: 30 µA @ 650 V |
на замовлення 1974 шт: термін постачання 21-31 дні (днів) |
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NXPSC06650Q | WeEn Semiconductors | Description: DIODE SIL CARB 650V 6A TO220AC |
на замовлення 998 шт: термін постачання 21-31 дні (днів) |
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BYC5B-600,118 | WeEn Semiconductors | Description: DIODE GEN PURP 500V 5A D2PAK |
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ACTT16-800CTNQ | WeEn Semiconductors |
Description: TRIAC 800V 16A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Triac Type: Standard Configuration: Single Operating Temperature: 150°C (TJ) Current - Hold (Ih) (Max): 30 mA Current - Gate Trigger (Igt) (Max): 35 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 150A Voltage - Gate Trigger (Vgt) (Max): 1 V Supplier Device Package: TO-220AB Part Status: Active Current - On State (It (RMS)) (Max): 16 A Voltage - Off State: 800 V |
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BTA204-600E,127 | WeEn Semiconductors |
Description: TRIAC SENS GATE 600V 4A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: 125°C (TJ) Current - Hold (Ih) (Max): 12 mA Current - Gate Trigger (Igt) (Max): 10 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Supplier Device Package: TO-220AB Part Status: Active Current - On State (It (RMS)) (Max): 4 A Voltage - Off State: 600 V |
на замовлення 4085 шт: термін постачання 21-31 дні (днів) |
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N0118GA,412 | WeEn Semiconductors |
Description: SCR 600V 800MA TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole SCR Type: Sensitive Gate Current - Hold (Ih) (Max): 5 mA Current - Gate Trigger (Igt) (Max): 7 µA Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 9A Current - On State (It (AV)) (Max): 510 mA Voltage - Gate Trigger (Vgt) (Max): 800 mV Voltage - On State (Vtm) (Max): 1.95 V Current - Off State (Max): 10 µA Supplier Device Package: TO-92-3 Part Status: Active Current - On State (It (RMS)) (Max): 800 mA Voltage - Off State: 600 V |
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MAC97A8,412 | WeEn Semiconductors |
Description: TRIAC SENS GATE 600V 0.6A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: 125°C (TJ) Current - Hold (Ih) (Max): 10 mA Current - Gate Trigger (Igt) (Max): 5 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 8.8A Voltage - Gate Trigger (Vgt) (Max): 2 V Supplier Device Package: TO-92-3 Part Status: Active Current - On State (It (RMS)) (Max): 600 mA Voltage - Off State: 600 V |
на замовлення 78371 шт: термін постачання 21-31 дні (днів) |
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MAC97A8/DG,412 | WeEn Semiconductors |
Description: TRIAC SENS GATE 400V 0.6A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: 125°C (TJ) Current - Hold (Ih) (Max): 10 mA Current - Gate Trigger (Igt) (Max): 5 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 8.8A Voltage - Gate Trigger (Vgt) (Max): 2 V Supplier Device Package: TO-92-3 Part Status: Active Current - On State (It (RMS)) (Max): 600 mA Voltage - Off State: 400 V |
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BTA202X-1000ETQ | WeEn Semiconductors |
Description: TRIAC ALTERNISTOR 1KV 2A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Triac Type: Alternistor - Snubberless Configuration: Single Operating Temperature: 150°C (TJ) Current - Hold (Ih) (Max): 25 mA Current - Gate Trigger (Igt) (Max): 10 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A Voltage - Gate Trigger (Vgt) (Max): 1 V Supplier Device Package: TO-220F Part Status: Active Current - On State (It (RMS)) (Max): 2 A Voltage - Off State: 1 kV |
на замовлення 7000 шт: термін постачання 21-31 дні (днів) |
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ACTT2S-800ETNJ | WeEn Semiconductors |
Description: TRIAC SENS GATE 800V 2A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: 150°C (TJ) Current - Hold (Ih) (Max): 10 mA Current - Gate Trigger (Igt) (Max): 10 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 18A, 19.8A Voltage - Gate Trigger (Vgt) (Max): 1 V Supplier Device Package: DPAK Part Status: Active Current - On State (It (RMS)) (Max): 2 A Voltage - Off State: 800 V |
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NCR100W-10LX | WeEn Semiconductors |
Description: SCR 850V 1.1A SC73 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount SCR Type: Sensitive Gate Operating Temperature: 125°C (TJ) Current - Hold (Ih) (Max): 3 mA Current - Gate Trigger (Igt) (Max): 50 µA Current - Non Rep. Surge 50, 60Hz (Itsm): 11A, 12.1A Current - On State (It (AV)) (Max): 800 mA Voltage - Gate Trigger (Vgt) (Max): 800 mV Voltage - On State (Vtm) (Max): 1.7 V Current - Off State (Max): 1 mA Supplier Device Package: SC-73 Part Status: Active Current - On State (It (RMS)) (Max): 1.1 A Voltage - Off State: 850 V |
на замовлення 19000 шт: термін постачання 21-31 дні (днів) |
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NCR100W-10LX | WeEn Semiconductors |
Description: SCR 850V 1.1A SC73 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount SCR Type: Sensitive Gate Operating Temperature: 125°C (TJ) Current - Hold (Ih) (Max): 3 mA Current - Gate Trigger (Igt) (Max): 50 µA Current - Non Rep. Surge 50, 60Hz (Itsm): 11A, 12.1A Current - On State (It (AV)) (Max): 800 mA Voltage - Gate Trigger (Vgt) (Max): 800 mV Voltage - On State (Vtm) (Max): 1.7 V Current - Off State (Max): 1 mA Supplier Device Package: SC-73 Part Status: Active Current - On State (It (RMS)) (Max): 1.1 A Voltage - Off State: 850 V |
на замовлення 19968 шт: термін постачання 21-31 дні (днів) |
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WN3S20H100CQ | WeEn Semiconductors |
Description: DUAL COMMON CATHODE POWER SCHOTT Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220AB Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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WN3S20H100CXQ | WeEn Semiconductors |
Description: DIODE ARR SCHOTT 100V 10A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220F Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V |
на замовлення 4535 шт: термін постачання 21-31 дні (днів) |
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BYV60W-600PT2Q | WeEn Semiconductors |
Description: DIODE GEN PURP 600V 60A TO247-2 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 79 ns Technology: Standard Current - Average Rectified (Io): 60A Supplier Device Package: TO-247-2 Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 60 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 490 шт: термін постачання 21-31 дні (днів) |
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ESDALD18BCX | WeEn Semiconductors |
Description: ESDALD18BC/SOD323/REEL 7" Q1/T1 Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Telecom Capacitance @ Frequency: 0.8pF @ 1MHz Current - Peak Pulse (10/1000µs): 8A Voltage - Reverse Standoff (Typ): 18V Supplier Device Package: SOD-323 Bidirectional Channels: 1 Voltage - Breakdown (Min): 19V Voltage - Clamping (Max) @ Ipp: 44V Power - Peak Pulse: 350W Power Line Protection: No |
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OF4487J | WeEn Semiconductors |
Description: OF4487 DPAK REEL 13" Q1 T1 Packaging: Tape & Reel (TR) Part Status: Active |
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BTA206-800CT,127 | WeEn Semiconductors |
Description: TRIAC 800V 6A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Triac Type: Standard Configuration: Single Operating Temperature: 150°C (TJ) Current - Hold (Ih) (Max): 35 mA Current - Gate Trigger (Igt) (Max): 35 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 60A, 66A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Supplier Device Package: TO-220AB Part Status: Active Current - On State (It (RMS)) (Max): 6 A Voltage - Off State: 800 V |
на замовлення 9995 шт: термін постачання 21-31 дні (днів) |
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BUJ303B,127 | WeEn Semiconductors | Description: TRANS NPN 400V 5A TO220AB |
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WN3S40H100CQ | WeEn Semiconductors |
Description: DIODE ARR SCHOT 100V 20A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-220AB Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 710 mV @ 20 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V |
на замовлення 5990 шт: термін постачання 21-31 дні (днів) |
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BYV5ED-600PJ | WeEn Semiconductors |
Description: DIODE GEN PURP 600V 5A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: DPAK Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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BYV5ED-600PJ | WeEn Semiconductors |
Description: DIODE GEN PURP 600V 5A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: DPAK Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 7490 шт: термін постачання 21-31 дні (днів) |
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WN3S30H100CQ | WeEn Semiconductors |
Description: DIODE ARR SCHOT 100V 15A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: TO-220AB Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 710 mV @ 15 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V |
на замовлення 5988 шт: термін постачання 21-31 дні (днів) |
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WN3S30H100CXQ | WeEn Semiconductors |
Description: DIODE ARR SCHOTT 100V 15A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: TO-220F Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 710 mV @ 15 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V |
на замовлення 5986 шт: термін постачання 21-31 дні (днів) |
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WN3S30100CXQ | WeEn Semiconductors |
Description: DIODE ARR SCHOTT 100V 15A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: TO-220F Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 770 mV @ 15 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V |
на замовлення 5965 шт: термін постачання 21-31 дні (днів) |
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BTA312X-800B,127 | WeEn Semiconductors |
Description: TRIAC 800V 12A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Triac Type: Standard Configuration: Single Operating Temperature: 125°C (TJ) Current - Hold (Ih) (Max): 60 mA Current - Gate Trigger (Igt) (Max): 50 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 95A, 105A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Supplier Device Package: TO-220F Part Status: Active Current - On State (It (RMS)) (Max): 12 A Voltage - Off State: 800 V |
на замовлення 5987 шт: термін постачання 21-31 дні (днів) |
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BTA202-1000CTEP | WeEn Semiconductors |
Description: TRIAC ALTERNISTOR 1KV 2A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Triac Type: Alternistor - Snubberless Configuration: Single Operating Temperature: 150°C (TJ) Current - Hold (Ih) (Max): 40 mA Current - Gate Trigger (Igt) (Max): 35 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A Voltage - Gate Trigger (Vgt) (Max): 1 V Supplier Device Package: TO-92-3 Part Status: Active Current - On State (It (RMS)) (Max): 2 A Voltage - Off State: 1 kV |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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ACTT6B-800E,118 | WeEn Semiconductors |
Description: TRIAC SENS GATE 800V 6A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: 125°C (TJ) Current - Hold (Ih) (Max): 25 mA Current - Gate Trigger (Igt) (Max): 10 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 51A, 56A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Supplier Device Package: D2PAK Part Status: Active Current - On State (It (RMS)) (Max): 6 A Voltage - Off State: 800 V |
на замовлення 4800 шт: термін постачання 21-31 дні (днів) |
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ACTT6B-800E,118 | WeEn Semiconductors |
Description: TRIAC SENS GATE 800V 6A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: 125°C (TJ) Current - Hold (Ih) (Max): 25 mA Current - Gate Trigger (Igt) (Max): 10 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 51A, 56A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Supplier Device Package: D2PAK Part Status: Active Current - On State (It (RMS)) (Max): 6 A Voltage - Off State: 800 V |
на замовлення 5590 шт: термін постачання 21-31 дні (днів) |
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WNSCM160120WQ | WeEn Semiconductors |
Description: WNSCM160120W/TO-247/STANDARD MAR Packaging: Bulk Part Status: Active Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta) Rds On (Max) @ Id, Vgs: 196mOhm @ 10A, 20V Power Dissipation (Max): 155W (Ta) Vgs(th) (Max) @ Id: 4.5V @ 3mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 736 pF @ 1000 V |
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SMBJ75CAJ | WeEn Semiconductors |
Description: SMBJ75CA/SMB/REEL 13" Q1/T1 *ST Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 5A Voltage - Reverse Standoff (Typ): 75V Supplier Device Package: SMB Bidirectional Channels: 1 Voltage - Breakdown (Min): 83.9V Voltage - Clamping (Max) @ Ipp: 121V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active |
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SMBJ70CAJ | WeEn Semiconductors |
Description: SMBJ70CA/SMB/REEL 13" Q1/T1 *ST Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 5.3A Voltage - Reverse Standoff (Typ): 70V Supplier Device Package: SMB Bidirectional Channels: 1 Voltage - Breakdown (Min): 78.4V Voltage - Clamping (Max) @ Ipp: 113V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active |
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NXPLQSC30650WQ | WeEn Semiconductors |
Description: DIODE SIL CARB 650V 30A TO247-3 Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 300pF @ 1V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: TO-247-3 Operating Temperature - Junction: 175°C (Max) Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 15 A Current - Reverse Leakage @ Vr: 250 µA @ 650 V |
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BTA208X-800CTQ | WeEn Semiconductors |
Description: TRIAC 800V 8A TO220F Packaging: Bulk Part Status: Active Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Triac Type: Standard Configuration: Single Operating Temperature: 150°C (TJ) Current - Hold (Ih) (Max): 40 mA Current - Gate Trigger (Igt) (Max): 35 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 80A, 88A Voltage - Gate Trigger (Vgt) (Max): 1 V Supplier Device Package: TO-220F Current - On State (It (RMS)) (Max): 8 A Voltage - Off State: 800 V |
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MUR320J | WeEn Semiconductors |
Description: MUR320/SMC/REEL 13" Q1/T1 *STAN Packaging: Bulk Part Status: Active Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: SMC Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
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SMDJ26AJ | WeEn Semiconductors |
Description: SMDJ26A/SMC/REEL 13" Q1/T1 *STA Packaging: Tape & Reel (TR) Part Status: Active Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 71.3A Voltage - Reverse Standoff (Typ): 26V Supplier Device Package: SMC Unidirectional Channels: 1 Voltage - Clamping (Max) @ Ipp: 42.1V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Voltage - Breakdown (Min): 29.12V |
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BT138X-800,127 | WeEn Semiconductors |
Description: TRIAC 800V 12A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Triac Type: Standard Configuration: Single Operating Temperature: 125°C (TJ) Current - Hold (Ih) (Max): 30 mA Current - Gate Trigger (Igt) (Max): 35 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 95A, 105A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Supplier Device Package: TO-220F Part Status: Active Current - On State (It (RMS)) (Max): 12 A Voltage - Off State: 800 V |
на замовлення 1984 шт: термін постачання 21-31 дні (днів) |
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WB100FC120ALZ | WeEn Semiconductors |
Description: WB100FC120AL/NAU000/NO MARK*CHIP Packaging: Bulk Part Status: Active Package / Case: Die Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Technology: Standard Current - Average Rectified (Io): 100A Supplier Device Package: Wafer Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 100 A Current - Reverse Leakage @ Vr: 250 µA @ 1200 V |
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BT151Y-650LTNQ | WeEn Semiconductors |
Description: BT151Y-650LTN/IITO220/STANDARD M Packaging: Bulk Part Status: Active Package / Case: TO-220-3 Isolated Tab Mounting Type: Through Hole SCR Type: Standard Recovery Operating Temperature: 150°C (TJ) Current - Hold (Ih) (Max): 20 mA Current - Gate Trigger (Igt) (Max): 5 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 132A Current - On State (It (AV)) (Max): 7.5 A Voltage - Gate Trigger (Vgt) (Max): 1 V Voltage - On State (Vtm) (Max): 1.5 V Current - Off State (Max): 1 mA Supplier Device Package: IITO-220E Current - On State (It (RMS)) (Max): 12 A Voltage - Off State: 650 V |
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BTA310X-600D,127 | WeEn Semiconductors |
Description: TRIAC SENS GATE 600V 10A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: 125°C (TJ) Current - Hold (Ih) (Max): 10 mA Current - Gate Trigger (Igt) (Max): 5 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 85A, 93A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Supplier Device Package: TO-220F Part Status: Active Current - On State (It (RMS)) (Max): 10 A Voltage - Off State: 600 V |
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WNSC2D051200D6J | WeEn Semiconductors |
Description: WNSC2D051200D/TO252/REEL 13" Q1 Packaging: Tape & Reel (TR) Part Status: Active Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 260pF @ 1V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: DPAK Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A Current - Reverse Leakage @ Vr: 25 µA @ 1200 V Current Coupled to Voltage - Forward (Vf) (Max) @ If: 5 Voltage Coupled to Current - Reverse Leakage @ Vr: 1200 |
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WNSC2D021200D6J | WeEn Semiconductors |
Description: WNSC2D021200D/TO252/REEL 13" Q1 Packaging: Tape & Reel (TR) Part Status: Active Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 95pF @ 1V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DPAK Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 1200 V Current Coupled to Voltage - Forward (Vf) (Max) @ If: 2 Voltage Coupled to Current - Reverse Leakage @ Vr: 1200 |
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WNSC2D101200D6J | WeEn Semiconductors |
Description: WNSC2D101200D/TO252/REEL 13" Q1 Packaging: Bulk Part Status: Active Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 481pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: DPAK Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V |
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SMDJ33CAJ | WeEn Semiconductors |
Description: SMDJ33CA/SMC/REEL 13" Q1/T1 *ST Packaging: Tape & Reel (TR) Part Status: Active Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 56.3A Voltage - Reverse Standoff (Typ): 33V Supplier Device Package: SMC Bidirectional Channels: 1 Voltage - Clamping (Max) @ Ipp: 53.3V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Voltage - Breakdown (Min): 36.98V |
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BTA216-600B,127 | WeEn Semiconductors |
Description: TRIAC 600V 16A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Triac Type: Standard Configuration: Single Operating Temperature: 125°C (TJ) Current - Hold (Ih) (Max): 60 mA Current - Gate Trigger (Igt) (Max): 50 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 150A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Supplier Device Package: TO-220AB Part Status: Active Current - On State (It (RMS)) (Max): 16 A Voltage - Off State: 600 V |
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SMBJ15AJ | WeEn Semiconductors |
Description: SMBJ15A/SMB/REEL 13" Q1/T1 *STA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 24.6A Voltage - Reverse Standoff (Typ): 15V Supplier Device Package: SMB Unidirectional Channels: 1 Voltage - Clamping (Max) @ Ipp: 24.4V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active Voltage - Breakdown (Min): 16.86V |
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SMAJ5.0AJ | WeEn Semiconductors |
Description: SMAJ5.0A/SMA/REEL 13" Q1/T1 *ST Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 43.5A Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: SMA Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.45V Voltage - Clamping (Max) @ Ipp: 9.2V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Active |
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SMAJ12CAJ | WeEn Semiconductors |
Description: SMAJ12CA/SMA/REEL 13" Q1/T1 *ST Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 20.1A Voltage - Reverse Standoff (Typ): 12V Supplier Device Package: SMA Bidirectional Channels: 1 Voltage - Clamping (Max) @ Ipp: 19.9V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Active Voltage - Breakdown (Min): 13.43V |
товар відсутній |
BYV42EB-200,118 |
Виробник: WeEn Semiconductors
Description: DIODE ARRAY GP 200V 30A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 28 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Description: DIODE ARRAY GP 200V 30A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 28 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
на замовлення 10977 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 118.28 грн |
10+ | 93.06 грн |
100+ | 72.38 грн |
WNSC2D04650Q |
Виробник: WeEn Semiconductors
Description: DIODE SIL CARB 650V 4A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 125pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Description: DIODE SIL CARB 650V 4A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 125pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
товар відсутній
WNSC2D06650Q |
Виробник: WeEn Semiconductors
Description: DIODE SIL CARB 650V 6A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 198pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Description: DIODE SIL CARB 650V 6A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 198pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
товар відсутній
WNSC2D10650Q |
Виробник: WeEn Semiconductors
Description: DIODE SIL CARB 650V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 310pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Description: DIODE SIL CARB 650V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 310pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
на замовлення 995 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 259.12 грн |
10+ | 163.42 грн |
100+ | 114.31 грн |
500+ | 87.55 грн |
TYN30Y-600TFQ |
Виробник: WeEn Semiconductors
Description: PLANAR PASSIVATED SILICON CONTRO
Packaging: Tube
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 360A, 396A
Current - On State (It (AV)) (Max): 19 A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 1.5 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-220AB
Part Status: Active
Current - On State (It (RMS)) (Max): 30 A
Voltage - Off State: 600 V
Description: PLANAR PASSIVATED SILICON CONTRO
Packaging: Tube
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 360A, 396A
Current - On State (It (AV)) (Max): 19 A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 1.5 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-220AB
Part Status: Active
Current - On State (It (RMS)) (Max): 30 A
Voltage - Off State: 600 V
на замовлення 6956 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 57.58 грн |
50+ | 44.1 грн |
100+ | 34.94 грн |
500+ | 27.8 грн |
1000+ | 27.49 грн |
WNSC6D20650CW6Q |
Виробник: WeEn Semiconductors
Description: DIODE ARR SIC 650V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Description: DIODE ARR SIC 650V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
на замовлення 465 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 378.95 грн |
30+ | 288.98 грн |
120+ | 247.7 грн |
BT148-400R,127 |
Виробник: WeEn Semiconductors
Description: SCR 400V 4A SOT82-3
Packaging: Tube
Package / Case: SOT-82
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 6 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 35A, 38A
Current - On State (It (AV)) (Max): 2.5 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.8 V
Current - Off State (Max): 500 µA
Supplier Device Package: SOT-82-3
Part Status: Active
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 400 V
Description: SCR 400V 4A SOT82-3
Packaging: Tube
Package / Case: SOT-82
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 6 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 35A, 38A
Current - On State (It (AV)) (Max): 2.5 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.8 V
Current - Off State (Max): 500 µA
Supplier Device Package: SOT-82-3
Part Status: Active
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 400 V
на замовлення 4827 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 45.13 грн |
50+ | 36.3 грн |
100+ | 26.35 грн |
500+ | 20.66 грн |
1000+ | 17.59 грн |
2000+ | 15.66 грн |
ACT108-800EQP |
Виробник: WeEn Semiconductors
Description: TRIAC SENS GATE 800V 0.8A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 13A, 14.3A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-92-3
Part Status: Active
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 800 V
Description: TRIAC SENS GATE 800V 0.8A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 13A, 14.3A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-92-3
Part Status: Active
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 800 V
на замовлення 9974 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 35.79 грн |
11+ | 29.37 грн |
100+ | 20.41 грн |
500+ | 14.96 грн |
1000+ | 12.16 грн |
WNSC2D06650DJ |
Виробник: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 198pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 198pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 53.51 грн |
5000+ | 49.6 грн |
WNSC2D06650DJ |
Виробник: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 198pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 198pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
на замовлення 12198 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 119.05 грн |
10+ | 94.86 грн |
100+ | 75.55 грн |
500+ | 60 грн |
1000+ | 50.91 грн |
WNSC2D06650XQ |
Виробник: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 6A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 198pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 6A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 198pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
товар відсутній
WNSC2D06650TJ |
Виробник: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 6A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 198pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 5-DFN (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 6A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 198pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 5-DFN (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
товар відсутній
WNSC2D06650TJ |
Виробник: WeEn Semiconductors
Description: DIODE SIL CARBIDE 650V 6A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 198pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 5-DFN (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 6A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 198pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 5-DFN (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
на замовлення 1974 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 135.39 грн |
10+ | 108.2 грн |
100+ | 86.16 грн |
500+ | 68.42 грн |
1000+ | 58.05 грн |
NXPSC06650Q |
Виробник: WeEn Semiconductors
Description: DIODE SIL CARB 650V 6A TO220AC
Description: DIODE SIL CARB 650V 6A TO220AC
на замовлення 998 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 263.78 грн |
10+ | 227.94 грн |
100+ | 186.73 грн |
500+ | 149.18 грн |
BYC5B-600,118 |
Виробник: WeEn Semiconductors
Description: DIODE GEN PURP 500V 5A D2PAK
Description: DIODE GEN PURP 500V 5A D2PAK
товар відсутній
ACTT16-800CTNQ |
Виробник: WeEn Semiconductors
Description: TRIAC 800V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 30 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 150A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220AB
Part Status: Active
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 800 V
Description: TRIAC 800V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 30 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 150A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220AB
Part Status: Active
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 800 V
товар відсутній
BTA204-600E,127 |
Виробник: WeEn Semiconductors
Description: TRIAC SENS GATE 600V 4A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 12 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: TO-220AB
Part Status: Active
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 600 V
Description: TRIAC SENS GATE 600V 4A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 12 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: TO-220AB
Part Status: Active
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 600 V
на замовлення 4085 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 76.26 грн |
10+ | 45.86 грн |
100+ | 30.04 грн |
500+ | 21.8 грн |
1000+ | 19.75 грн |
2000+ | 18.01 грн |
N0118GA,412 |
Виробник: WeEn Semiconductors
Description: SCR 600V 800MA TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 7 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 9A
Current - On State (It (AV)) (Max): 510 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.95 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-92-3
Part Status: Active
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 600 V
Description: SCR 600V 800MA TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 7 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 9A
Current - On State (It (AV)) (Max): 510 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.95 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-92-3
Part Status: Active
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 600 V
товар відсутній
MAC97A8,412 |
Виробник: WeEn Semiconductors
Description: TRIAC SENS GATE 600V 0.6A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 10 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 8.8A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Supplier Device Package: TO-92-3
Part Status: Active
Current - On State (It (RMS)) (Max): 600 mA
Voltage - Off State: 600 V
Description: TRIAC SENS GATE 600V 0.6A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 10 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 8.8A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Supplier Device Package: TO-92-3
Part Status: Active
Current - On State (It (RMS)) (Max): 600 mA
Voltage - Off State: 600 V
на замовлення 78371 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 31.9 грн |
16+ | 19.18 грн |
100+ | 12.24 грн |
500+ | 8.67 грн |
1000+ | 7.76 грн |
2000+ | 6.99 грн |
5000+ | 6.05 грн |
10000+ | 5.81 грн |
MAC97A8/DG,412 |
Виробник: WeEn Semiconductors
Description: TRIAC SENS GATE 400V 0.6A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 10 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 8.8A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Supplier Device Package: TO-92-3
Part Status: Active
Current - On State (It (RMS)) (Max): 600 mA
Voltage - Off State: 400 V
Description: TRIAC SENS GATE 400V 0.6A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 10 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 8.8A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Supplier Device Package: TO-92-3
Part Status: Active
Current - On State (It (RMS)) (Max): 600 mA
Voltage - Off State: 400 V
товар відсутній
BTA202X-1000ETQ |
Виробник: WeEn Semiconductors
Description: TRIAC ALTERNISTOR 1KV 2A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 25 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220F
Part Status: Active
Current - On State (It (RMS)) (Max): 2 A
Voltage - Off State: 1 kV
Description: TRIAC ALTERNISTOR 1KV 2A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 25 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220F
Part Status: Active
Current - On State (It (RMS)) (Max): 2 A
Voltage - Off State: 1 kV
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 44.35 грн |
50+ | 34.5 грн |
100+ | 25.63 грн |
500+ | 18.78 грн |
1000+ | 15.26 грн |
2000+ | 13.64 грн |
5000+ | 12.74 грн |
ACTT2S-800ETNJ |
Виробник: WeEn Semiconductors
Description: TRIAC SENS GATE 800V 2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 10 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 18A, 19.8A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: DPAK
Part Status: Active
Current - On State (It (RMS)) (Max): 2 A
Voltage - Off State: 800 V
Description: TRIAC SENS GATE 800V 2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 10 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 18A, 19.8A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: DPAK
Part Status: Active
Current - On State (It (RMS)) (Max): 2 A
Voltage - Off State: 800 V
товар відсутній
NCR100W-10LX |
Виробник: WeEn Semiconductors
Description: SCR 850V 1.1A SC73
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 3 mA
Current - Gate Trigger (Igt) (Max): 50 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 11A, 12.1A
Current - On State (It (AV)) (Max): 800 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 1 mA
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 1.1 A
Voltage - Off State: 850 V
Description: SCR 850V 1.1A SC73
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 3 mA
Current - Gate Trigger (Igt) (Max): 50 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 11A, 12.1A
Current - On State (It (AV)) (Max): 800 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 1 mA
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 1.1 A
Voltage - Off State: 850 V
на замовлення 19000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1000+ | 6.98 грн |
2000+ | 5.65 грн |
5000+ | 5.4 грн |
10000+ | 4.39 грн |
NCR100W-10LX |
Виробник: WeEn Semiconductors
Description: SCR 850V 1.1A SC73
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 3 mA
Current - Gate Trigger (Igt) (Max): 50 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 11A, 12.1A
Current - On State (It (AV)) (Max): 800 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 1 mA
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 1.1 A
Voltage - Off State: 850 V
Description: SCR 850V 1.1A SC73
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 3 mA
Current - Gate Trigger (Igt) (Max): 50 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 11A, 12.1A
Current - On State (It (AV)) (Max): 800 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 1 mA
Supplier Device Package: SC-73
Part Status: Active
Current - On State (It (RMS)) (Max): 1.1 A
Voltage - Off State: 850 V
на замовлення 19968 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 32.68 грн |
14+ | 22.03 грн |
100+ | 11.1 грн |
500+ | 8.5 грн |
WN3S20H100CQ |
Виробник: WeEn Semiconductors
Description: DUAL COMMON CATHODE POWER SCHOTT
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Description: DUAL COMMON CATHODE POWER SCHOTT
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 54.47 грн |
10+ | 45.86 грн |
100+ | 35.15 грн |
500+ | 26.07 грн |
1000+ | 20.86 грн |
2000+ | 18.99 грн |
WN3S20H100CXQ |
Виробник: WeEn Semiconductors
Description: DIODE ARR SCHOTT 100V 10A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Description: DIODE ARR SCHOTT 100V 10A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
на замовлення 4535 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 37.35 грн |
50+ | 29.58 грн |
100+ | 21.48 грн |
500+ | 16.84 грн |
1000+ | 15.77 грн |
BYV60W-600PT2Q |
Виробник: WeEn Semiconductors
Description: DIODE GEN PURP 600V 60A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 79 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 60A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 79 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 490 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 200.76 грн |
30+ | 154.81 грн |
120+ | 127.39 грн |
ESDALD18BCX |
Виробник: WeEn Semiconductors
Description: ESDALD18BC/SOD323/REEL 7" Q1/T1
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Capacitance @ Frequency: 0.8pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 44V
Power - Peak Pulse: 350W
Power Line Protection: No
Description: ESDALD18BC/SOD323/REEL 7" Q1/T1
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Capacitance @ Frequency: 0.8pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 44V
Power - Peak Pulse: 350W
Power Line Protection: No
товар відсутній
OF4487J |
Виробник: WeEn Semiconductors
Description: OF4487 DPAK REEL 13" Q1 T1
Packaging: Tape & Reel (TR)
Part Status: Active
Description: OF4487 DPAK REEL 13" Q1 T1
Packaging: Tape & Reel (TR)
Part Status: Active
товар відсутній
BTA206-800CT,127 |
Виробник: WeEn Semiconductors
Description: TRIAC 800V 6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 35 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 60A, 66A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: TO-220AB
Part Status: Active
Current - On State (It (RMS)) (Max): 6 A
Voltage - Off State: 800 V
Description: TRIAC 800V 6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 35 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 60A, 66A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: TO-220AB
Part Status: Active
Current - On State (It (RMS)) (Max): 6 A
Voltage - Off State: 800 V
на замовлення 9995 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 68.48 грн |
50+ | 30.8 грн |
100+ | 27.33 грн |
500+ | 19.95 грн |
1000+ | 18.11 грн |
2000+ | 16.94 грн |
WN3S40H100CQ |
Виробник: WeEn Semiconductors
Description: DIODE ARR SCHOT 100V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Description: DIODE ARR SCHOT 100V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
на замовлення 5990 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 52.13 грн |
50+ | 40.21 грн |
100+ | 31.86 грн |
500+ | 25.35 грн |
1000+ | 25.07 грн |
BYV5ED-600PJ |
Виробник: WeEn Semiconductors
Description: DIODE GEN PURP 600V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 10.75 грн |
5000+ | 9.82 грн |
BYV5ED-600PJ |
Виробник: WeEn Semiconductors
Description: DIODE GEN PURP 600V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 7490 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 31.9 грн |
12+ | 26.23 грн |
100+ | 18.24 грн |
500+ | 13.36 грн |
1000+ | 10.86 грн |
WN3S30H100CQ |
Виробник: WeEn Semiconductors
Description: DIODE ARR SCHOT 100V 15A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Description: DIODE ARR SCHOT 100V 15A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
на замовлення 5988 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 63.03 грн |
50+ | 50.53 грн |
100+ | 36.67 грн |
500+ | 28.75 грн |
1000+ | 24.47 грн |
2000+ | 21.8 грн |
5000+ | 20.31 грн |
WN3S30H100CXQ |
Виробник: WeEn Semiconductors
Description: DIODE ARR SCHOTT 100V 15A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Description: DIODE ARR SCHOTT 100V 15A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
на замовлення 5986 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 63.81 грн |
50+ | 51.12 грн |
100+ | 37.1 грн |
500+ | 29.09 грн |
1000+ | 24.76 грн |
2000+ | 22.05 грн |
5000+ | 20.55 грн |
WN3S30100CXQ |
Виробник: WeEn Semiconductors
Description: DIODE ARR SCHOTT 100V 15A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Description: DIODE ARR SCHOTT 100V 15A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220F
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
на замовлення 5965 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 42.8 грн |
50+ | 34.14 грн |
100+ | 24.77 грн |
500+ | 19.43 грн |
1000+ | 18.2 грн |
BTA312X-800B,127 |
Виробник: WeEn Semiconductors
Description: TRIAC 800V 12A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 95A, 105A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: TO-220F
Part Status: Active
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 800 V
Description: TRIAC 800V 12A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 95A, 105A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: TO-220F
Part Status: Active
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 800 V
на замовлення 5987 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 122.17 грн |
50+ | 56.2 грн |
100+ | 50.18 грн |
500+ | 37.16 грн |
1000+ | 33.96 грн |
2000+ | 31.27 грн |
5000+ | 27.89 грн |
BTA202-1000CTEP |
Виробник: WeEn Semiconductors
Description: TRIAC ALTERNISTOR 1KV 2A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-92-3
Part Status: Active
Current - On State (It (RMS)) (Max): 2 A
Voltage - Off State: 1 kV
Description: TRIAC ALTERNISTOR 1KV 2A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25A, 27.5A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-92-3
Part Status: Active
Current - On State (It (RMS)) (Max): 2 A
Voltage - Off State: 1 kV
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
15+ | 21.79 грн |
17+ | 17.91 грн |
100+ | 12.42 грн |
500+ | 9.1 грн |
1000+ | 7.9 грн |
ACTT6B-800E,118 |
Виробник: WeEn Semiconductors
Description: TRIAC SENS GATE 800V 6A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 25 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 51A, 56A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: D2PAK
Part Status: Active
Current - On State (It (RMS)) (Max): 6 A
Voltage - Off State: 800 V
Description: TRIAC SENS GATE 800V 6A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 25 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 51A, 56A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: D2PAK
Part Status: Active
Current - On State (It (RMS)) (Max): 6 A
Voltage - Off State: 800 V
на замовлення 4800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
800+ | 37.66 грн |
1600+ | 29.54 грн |
2400+ | 27.81 грн |
ACTT6B-800E,118 |
Виробник: WeEn Semiconductors
Description: TRIAC SENS GATE 800V 6A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 25 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 51A, 56A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: D2PAK
Part Status: Active
Current - On State (It (RMS)) (Max): 6 A
Voltage - Off State: 800 V
Description: TRIAC SENS GATE 800V 6A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 25 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 51A, 56A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: D2PAK
Part Status: Active
Current - On State (It (RMS)) (Max): 6 A
Voltage - Off State: 800 V
на замовлення 5590 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 70.03 грн |
10+ | 55 грн |
100+ | 42.79 грн |
WNSCM160120WQ |
Виробник: WeEn Semiconductors
Description: WNSCM160120W/TO-247/STANDARD MAR
Packaging: Bulk
Part Status: Active
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 196mOhm @ 10A, 20V
Power Dissipation (Max): 155W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 736 pF @ 1000 V
Description: WNSCM160120W/TO-247/STANDARD MAR
Packaging: Bulk
Part Status: Active
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 196mOhm @ 10A, 20V
Power Dissipation (Max): 155W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 736 pF @ 1000 V
товар відсутній
SMBJ75CAJ |
Виробник: WeEn Semiconductors
Description: SMBJ75CA/SMB/REEL 13" Q1/T1 *ST
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 83.9V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Description: SMBJ75CA/SMB/REEL 13" Q1/T1 *ST
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 83.9V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
товар відсутній
SMBJ70CAJ |
Виробник: WeEn Semiconductors
Description: SMBJ70CA/SMB/REEL 13" Q1/T1 *ST
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.3A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 78.4V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Description: SMBJ70CA/SMB/REEL 13" Q1/T1 *ST
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.3A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 78.4V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
товар відсутній
NXPLQSC30650WQ |
Виробник: WeEn Semiconductors
Description: DIODE SIL CARB 650V 30A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 15 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
Description: DIODE SIL CARB 650V 30A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 15 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
товар відсутній
BTA208X-800CTQ |
Виробник: WeEn Semiconductors
Description: TRIAC 800V 8A TO220F
Packaging: Bulk
Part Status: Active
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 80A, 88A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220F
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 800 V
Description: TRIAC 800V 8A TO220F
Packaging: Bulk
Part Status: Active
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 80A, 88A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220F
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 800 V
товар відсутній
MUR320J |
Виробник: WeEn Semiconductors
Description: MUR320/SMC/REEL 13" Q1/T1 *STAN
Packaging: Bulk
Part Status: Active
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: MUR320/SMC/REEL 13" Q1/T1 *STAN
Packaging: Bulk
Part Status: Active
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
SMDJ26AJ |
Виробник: WeEn Semiconductors
Description: SMDJ26A/SMC/REEL 13" Q1/T1 *STA
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 71.3A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Voltage - Breakdown (Min): 29.12V
Description: SMDJ26A/SMC/REEL 13" Q1/T1 *STA
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 71.3A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Voltage - Breakdown (Min): 29.12V
товар відсутній
BT138X-800,127 |
Виробник: WeEn Semiconductors
Description: TRIAC 800V 12A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 30 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 95A, 105A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: TO-220F
Part Status: Active
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 800 V
Description: TRIAC 800V 12A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 30 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 95A, 105A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: TO-220F
Part Status: Active
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 800 V
на замовлення 1984 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 59.92 грн |
50+ | 46.67 грн |
100+ | 36.98 грн |
500+ | 29.41 грн |
1000+ | 29.09 грн |
WB100FC120ALZ |
Виробник: WeEn Semiconductors
Description: WB100FC120AL/NAU000/NO MARK*CHIP
Packaging: Bulk
Part Status: Active
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Current - Average Rectified (Io): 100A
Supplier Device Package: Wafer
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 100 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Description: WB100FC120AL/NAU000/NO MARK*CHIP
Packaging: Bulk
Part Status: Active
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Current - Average Rectified (Io): 100A
Supplier Device Package: Wafer
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 100 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
товар відсутній
BT151Y-650LTNQ |
Виробник: WeEn Semiconductors
Description: BT151Y-650LTN/IITO220/STANDARD M
Packaging: Bulk
Part Status: Active
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 132A
Current - On State (It (AV)) (Max): 7.5 A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 1.5 V
Current - Off State (Max): 1 mA
Supplier Device Package: IITO-220E
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 650 V
Description: BT151Y-650LTN/IITO220/STANDARD M
Packaging: Bulk
Part Status: Active
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: 150°C (TJ)
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 132A
Current - On State (It (AV)) (Max): 7.5 A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 1.5 V
Current - Off State (Max): 1 mA
Supplier Device Package: IITO-220E
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 650 V
товар відсутній
BTA310X-600D,127 |
Виробник: WeEn Semiconductors
Description: TRIAC SENS GATE 600V 10A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 10 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 85A, 93A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: TO-220F
Part Status: Active
Current - On State (It (RMS)) (Max): 10 A
Voltage - Off State: 600 V
Description: TRIAC SENS GATE 600V 10A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 10 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 85A, 93A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: TO-220F
Part Status: Active
Current - On State (It (RMS)) (Max): 10 A
Voltage - Off State: 600 V
товар відсутній
WNSC2D051200D6J |
Виробник: WeEn Semiconductors
Description: WNSC2D051200D/TO252/REEL 13" Q1
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 260pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A
Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 5
Voltage Coupled to Current - Reverse Leakage @ Vr: 1200
Description: WNSC2D051200D/TO252/REEL 13" Q1
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 260pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A
Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 5
Voltage Coupled to Current - Reverse Leakage @ Vr: 1200
товар відсутній
WNSC2D021200D6J |
Виробник: WeEn Semiconductors
Description: WNSC2D021200D/TO252/REEL 13" Q1
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 95pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 2
Voltage Coupled to Current - Reverse Leakage @ Vr: 1200
Description: WNSC2D021200D/TO252/REEL 13" Q1
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 95pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 2
Voltage Coupled to Current - Reverse Leakage @ Vr: 1200
товар відсутній
WNSC2D101200D6J |
Виробник: WeEn Semiconductors
Description: WNSC2D101200D/TO252/REEL 13" Q1
Packaging: Bulk
Part Status: Active
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 481pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Description: WNSC2D101200D/TO252/REEL 13" Q1
Packaging: Bulk
Part Status: Active
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 481pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
товар відсутній
SMDJ33CAJ |
Виробник: WeEn Semiconductors
Description: SMDJ33CA/SMC/REEL 13" Q1/T1 *ST
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 56.3A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Voltage - Breakdown (Min): 36.98V
Description: SMDJ33CA/SMC/REEL 13" Q1/T1 *ST
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 56.3A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Voltage - Breakdown (Min): 36.98V
товар відсутній
BTA216-600B,127 |
Виробник: WeEn Semiconductors
Description: TRIAC 600V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 150A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: TO-220AB
Part Status: Active
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 600 V
Description: TRIAC 600V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: 125°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 150A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: TO-220AB
Part Status: Active
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 600 V
товар відсутній
SMBJ15AJ |
Виробник: WeEn Semiconductors
Description: SMBJ15A/SMB/REEL 13" Q1/T1 *STA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 24.6A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Voltage - Breakdown (Min): 16.86V
Description: SMBJ15A/SMB/REEL 13" Q1/T1 *STA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 24.6A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Voltage - Breakdown (Min): 16.86V
товар відсутній
SMAJ5.0AJ |
Виробник: WeEn Semiconductors
Description: SMAJ5.0A/SMA/REEL 13" Q1/T1 *ST
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 43.5A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Description: SMAJ5.0A/SMA/REEL 13" Q1/T1 *ST
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 43.5A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
товар відсутній
SMAJ12CAJ |
Виробник: WeEn Semiconductors
Description: SMAJ12CA/SMA/REEL 13" Q1/T1 *ST
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20.1A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: SMA
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Voltage - Breakdown (Min): 13.43V
Description: SMAJ12CA/SMA/REEL 13" Q1/T1 *ST
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20.1A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: SMA
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Voltage - Breakdown (Min): 13.43V
товар відсутній