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VS-43CTT100 VS-43CTT100 Vishay General Semiconductor - Diodes Division Description: DIODE ARR SCHOT 100V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 40 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
товар відсутній
VS-48CTQ060-N3 VS-48CTQ060-N3 Vishay General Semiconductor - Diodes Division VS-48CTQ060(PbF,N3).pdf Description: DIODE ARR SCHOTT 60V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 40 A
Current - Reverse Leakage @ Vr: 2 mA @ 60 V
товар відсутній
VS-4EWH02FNHM3 VS-4EWH02FNHM3 Vishay General Semiconductor - Diodes Division vs-ewh02hfn.pdf Description: DIODE GEN PURP 200V 4A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 4 A
Current - Reverse Leakage @ Vr: 3 µA @ 200 V
Qualification: AEC-Q101
товар відсутній
VS-50WQ03FN-M3 VS-50WQ03FN-M3 Vishay General Semiconductor - Diodes Division 50wq03fn.pdf Description: DIODE SCHOTTKY 30V 5.5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 590pF @ 5V, 1MHz
Current - Average Rectified (Io): 5.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 5 A
Current - Reverse Leakage @ Vr: 3 mA @ 30 V
на замовлення 2852 шт:
термін постачання 21-31 дні (днів)
VS-50WQ06FN-M3 VS-50WQ06FN-M3 Vishay General Semiconductor - Diodes Division 50wq06fn.pdf Description: DIODE SCHOTTKY 60V 5.5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 360pF @ 5V, 1MHz
Current - Average Rectified (Io): 5.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 5 A
Current - Reverse Leakage @ Vr: 3 mA @ 60 V
на замовлення 4236 шт:
термін постачання 21-31 дні (днів)
6+52.65 грн
75+ 42.03 грн
150+ 30.5 грн
525+ 23.92 грн
1050+ 20.36 грн
2025+ 18.13 грн
Мінімальне замовлення: 6
VS-50WQ10FNHM3 VS-50WQ10FNHM3 Vishay General Semiconductor - Diodes Division vs50wq10fn.pdf Description: DIODE SCHOTTKY 100V 5.5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 183pF @ 5V, 1MHz
Current - Average Rectified (Io): 5.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Qualification: AEC-Q101
товар відсутній
VS-50WQ10FN-M3 VS-50WQ10FN-M3 Vishay General Semiconductor - Diodes Division vs-50wq10fn.pdf Description: DIODE SCHOTTKY 100V 5.5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 183pF @ 5V, 1MHz
Current - Average Rectified (Io): 5.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
на замовлення 10399 шт:
термін постачання 21-31 дні (днів)
6+53.41 грн
75+ 42.84 грн
150+ 31.1 грн
525+ 24.39 грн
1050+ 20.75 грн
2025+ 18.48 грн
5025+ 17.22 грн
10050+ 15.95 грн
Мінімальне замовлення: 6
VS-5EWH06FNHM3 VS-5EWH06FNHM3 Vishay General Semiconductor - Diodes Division vs-5ewh06fnhm3.pdf Description: DIODE GEN PURP 600V 5A D-PAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
товар відсутній
VS-5EWH06FN-M3 VS-5EWH06FN-M3 Vishay General Semiconductor - Diodes Division vs-5ewh06fn-m3.pdf Description: DIODE GEN PURP 600V 5A D-PAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 2713 шт:
термін постачання 21-31 дні (днів)
6+60.28 грн
75+ 47.67 грн
150+ 34.6 грн
525+ 27.13 грн
1050+ 23.09 грн
2025+ 20.56 грн
Мінімальне замовлення: 6
VS-60APF12PBF VS-60APF12PBF Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1.2KV 60A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 480 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
товар відсутній
VS-60APU06HN3 VS-60APU06HN3 Vishay General Semiconductor - Diodes Division vs-60epu06hn3.pdf Description: DIODE GEN PURP 600V 60A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 81 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.68 V @ 60 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товар відсутній
VS-60APU06-N3 VS-60APU06-N3 Vishay General Semiconductor - Diodes Division vs-60epu06-n3.pdf Description: DIODE GEN PURP 600V 60A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 81 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.68 V @ 60 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
на замовлення 96 шт:
термін постачання 21-31 дні (днів)
2+190.76 грн
10+ 165.11 грн
Мінімальне замовлення: 2
VS-60CPH03-N3 VS-60CPH03-N3 Vishay General Semiconductor - Diodes Division vs-60cph03-n3.pdf Description: DIODE ARRAY GP 300V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 60 µA @ 300 V
на замовлення 293 шт:
термін постачання 21-31 дні (днів)
1+541.76 грн
25+ 416.8 грн
100+ 372.91 грн
VS-60CPH03PBF VS-60CPH03PBF Vishay General Semiconductor - Diodes Division vs-60cph03-n3.pdf Description: DIODE ARRAY GP 300V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 60 µA @ 300 V
товар відсутній
VS-60CPU06-F VS-60CPU06-F Vishay General Semiconductor - Diodes Division vs-60cpu06f.pdf Description: DIODE ARRAY GP 600V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
на замовлення 383 шт:
термін постачання 21-31 дні (днів)
1+430.36 грн
25+ 328.39 грн
100+ 281.47 грн
VS-60CTQ035-N3 VS-60CTQ035-N3 Vishay General Semiconductor - Diodes Division VS-60CTQ0xx(PBF,-N3).pdf Description: DIODE ARR SCHOTT 35V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 30 A
Current - Reverse Leakage @ Vr: 2 mA @ 35 V
товар відсутній
VS-60CTQ035PBF VS-60CTQ035PBF Vishay General Semiconductor - Diodes Division VS-60CTQ0xx(PBF,-N3).pdf Description: DIODE ARR SCHOTT 35V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 30 A
Current - Reverse Leakage @ Vr: 2 mA @ 35 V
товар відсутній
VS-60CTQ040PBF VS-60CTQ040PBF Vishay General Semiconductor - Diodes Division VS-60CTQ0xx(PBF,-N3).pdf Description: DIODE ARR SCHOTT 40V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 30 A
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
товар відсутній
VS-60CTQ045-N3 VS-60CTQ045-N3 Vishay General Semiconductor - Diodes Division VS-60CTQ0xx(PBF,-N3).pdf Description: DIODE ARR SCHOTT 45V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 60 A
Current - Reverse Leakage @ Vr: 2 mA @ 45 V
товар відсутній
VS-60EPS16PBF VS-60EPS16PBF Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1.6KV 60A TO247AC
товар відсутній
VS-60EPU04-N3 VS-60EPU04-N3 Vishay General Semiconductor - Diodes Division vs-60epu04-n3.pdf Description: DIODE GP 400V 60A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 60 A
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
на замовлення 460 шт:
термін постачання 21-31 дні (днів)
2+196.1 грн
25+ 149.57 грн
100+ 128.2 грн
Мінімальне замовлення: 2
VS-60EPU06HN3 VS-60EPU06HN3 Vishay General Semiconductor - Diodes Division vs-60epu06hn3.pdf Description: DIODE GP 600V 60A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 81 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.68 V @ 60 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Qualification: AEC-Q101
товар відсутній
VS-63CPQ100GPBF VS-63CPQ100GPBF Vishay General Semiconductor - Diodes Division VS-63CPQ100G(PbF,-N3).pdf Description: DIODE ARR SCHOT 100V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 60 A
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
товар відсутній
VS-63CPQ100-N3 VS-63CPQ100-N3 Vishay General Semiconductor - Diodes Division VS-63CPQ100PbF%2CN3.pdf Description: DIODE ARR SCHOT 100V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 60 A
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
на замовлення 546 шт:
термін постачання 21-31 дні (днів)
1+437.22 грн
25+ 335.94 грн
100+ 300.56 грн
500+ 248.88 грн
VS-63CTQ100GPBF VS-63CTQ100GPBF Vishay General Semiconductor - Diodes Division VS-63CTQ100G(PbF,-N3).pdf Description: DIODE ARR SCHOT 100V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
товар відсутній
VS-63CTQ100-N3 VS-63CTQ100-N3 Vishay General Semiconductor - Diodes Division VS-63CTQ100G(PbF,-N3).pdf Description: DIODE ARR SCHOT 100V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
товар відсутній
VS-6CWH02FNHM3 VS-6CWH02FNHM3 Vishay General Semiconductor - Diodes Division vs-6cwh02fnhm3.pdf Description: DIODE ARRAY GP 200V 3A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 19 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
VS-6CWQ06FN-M3 VS-6CWQ06FN-M3 Vishay General Semiconductor - Diodes Division vs-6cwq06fn.pdf Description: DIODE ARR SCHOTT 60V 3.5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 60 V
на замовлення 8580 шт:
термін постачання 21-31 дні (днів)
6+54.18 грн
75+ 43.15 грн
150+ 31.32 грн
525+ 24.56 грн
1050+ 20.9 грн
2025+ 18.61 грн
5025+ 17.34 грн
Мінімальне замовлення: 6
VS-6CWQ10FNHM3 VS-6CWQ10FNHM3 Vishay General Semiconductor - Diodes Division vs-6cwq10fn.pdf Description: DIODE ARR SCHOTT 100V 3.5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 6 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2974 шт:
термін постачання 21-31 дні (днів)
3+132.77 грн
10+ 106.62 грн
100+ 84.85 грн
500+ 67.38 грн
1000+ 57.17 грн
Мінімальне замовлення: 3
VS-6CWQ10FN-M3 VS-6CWQ10FN-M3 Vishay General Semiconductor - Diodes Division 6cwq10fn.pdf Description: DIODE ARR SCHOTT 100V 3.5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 6 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
на замовлення 4490 шт:
термін постачання 21-31 дні (днів)
6+57.23 грн
75+ 45.05 грн
150+ 32.7 грн
525+ 25.64 грн
1050+ 21.82 грн
2025+ 19.43 грн
Мінімальне замовлення: 6
VS-6EWH06FNHM3 VS-6EWH06FNHM3 Vishay General Semiconductor - Diodes Division vs-6ewx06fn.pdf Description: DIODE GEN PURP 600V 6A D-PAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 27 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Qualification: AEC-Q101
товар відсутній
VS-6TQ035-N3 VS-6TQ035-N3 Vishay General Semiconductor - Diodes Division VS-6TQ0xx(PBF,-N3).pdf Description: DIODE SCHOTTKY 35V 6A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 5V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 6 A
Current - Reverse Leakage @ Vr: 800 µA @ 35 V
товар відсутній
VS-6TQ045-N3 VS-6TQ045-N3 Vishay General Semiconductor - Diodes Division VS-6TQ0xx%28PBF%2C-N3%29.pdf Description: DIODE SCHOTTKY 45V 6A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 5V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 6 A
Current - Reverse Leakage @ Vr: 800 µA @ 45 V
товар відсутній
VS-80APS12-M3 VS-80APS12-M3 Vishay General Semiconductor - Diodes Division vs-80aps-m3series.pdf Description: DIODE GEN PURP 1.2KV 80A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 80A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.17 V @ 80 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 3568 шт:
термін постачання 21-31 дні (днів)
1+446.38 грн
25+ 341.06 грн
100+ 292.35 грн
500+ 243.87 грн
1000+ 208.81 грн
2000+ 196.62 грн
VS-80APS16-M3 VS-80APS16-M3 Vishay General Semiconductor - Diodes Division vs-80aps16-m3.pdf Description: DIODE GEN PURP 1.6KV 80A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 80A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.17 V @ 80 A
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
товар відсутній
VS-80APS16PBF VS-80APS16PBF Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1.6KV 80A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 80A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.17 V @ 80 A
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
товар відсутній
VS-80CNQ035ASLPBF VS-80CNQ035ASLPBF Vishay General Semiconductor - Diodes Division VS-80CNQ0(35,40,45)APbF.pdf Description: DIODE SCHOTTKY 35V 40A D618SL
товар відсутній
VS-80CNQ035ASMPBF VS-80CNQ035ASMPBF Vishay General Semiconductor - Diodes Division VS-80CNQ0(35,40,45)APbF.pdf Description: DIODE SCHOTTKY 35V 40A D618SM
товар відсутній
VS-80CNQ040ASLPBF VS-80CNQ040ASLPBF Vishay General Semiconductor - Diodes Division VS-80CNQ0(35,40,45)APbF.pdf Description: DIODE SCHOTTKY 35V 40A D618SL
товар відсутній
VS-80CNQ040ASMPBF VS-80CNQ040ASMPBF Vishay General Semiconductor - Diodes Division VS-80CNQ0(35,40,45)APbF.pdf Description: DIODE SCHOTTKY 35V 40A D618SM
товар відсутній
VS-80CNQ045ASLPBF VS-80CNQ045ASLPBF Vishay General Semiconductor - Diodes Division VS-80CNQ0(35,40,45)APbF.pdf Description: DIODE SCHOTTKY 35V 40A D618SL
товар відсутній
VS-80CNQ045ASMPBF VS-80CNQ045ASMPBF Vishay General Semiconductor - Diodes Division VS-80CNQ0(35,40,45)APbF.pdf Description: DIODE SCHOTTKY 35V 40A D618SM
товар відсутній
VS-80CPH03-F3 VS-80CPH03-F3 Vishay General Semiconductor - Diodes Division vs-80cph03-n3.pdf Description: DIODE STANDARD 300V 20A TO247AC
товар відсутній
VS-80CPH03-N3 VS-80CPH03-N3 Vishay General Semiconductor - Diodes Division vs-80cph03-n3.pdf Description: DIODE ARRAY GP 300V 20A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 40 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
товар відсутній
VS-80CPQ020-N3 VS-80CPQ020-N3 Vishay General Semiconductor - Diodes Division vs-80cpq020-n3.pdf Description: DIODE ARRAY GP 20V 40A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 40 A
Current - Reverse Leakage @ Vr: 5.5 mA @ 20 V
на замовлення 796 шт:
термін постачання 21-31 дні (днів)
1+375.42 грн
25+ 286.18 грн
100+ 245.29 грн
500+ 204.61 грн
VS-80CPU02-F3 VS-80CPU02-F3 Vishay General Semiconductor - Diodes Division Description: DIODE STANDARD 200V 40A TO247AC
товар відсутній
VS-80EBU02HF4 VS-80EBU02HF4 Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 200V 80A POWERTAB
Packaging: Tube
Package / Case: PowerTab®
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 80A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 80 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
VS-80EBU04HF4 VS-80EBU04HF4 Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 400V 80A POWERTAB
Packaging: Tube
Package / Case: PowerTab®
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 87 ns
Technology: Standard
Current - Average Rectified (Io): 80A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 80 A
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
Qualification: AEC-Q101
на замовлення 209 шт:
термін постачання 21-31 дні (днів)
1+427.3 грн
25+ 328.71 грн
100+ 294.12 грн
VS-8CWH02FNHM3 VS-8CWH02FNHM3 Vishay General Semiconductor - Diodes Division vs8cwh02fn.pdf Description: DIODE ARRAY GP 200V 4A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 27 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 4 A
Current - Reverse Leakage @ Vr: 4 µA @ 200 V
Qualification: AEC-Q101
товар відсутній
VS-8ETH03-1PBF VS-8ETH03-1PBF Vishay General Semiconductor - Diodes Division VS-8ETH03SPbF,%20VS-8ETH03-1PbF.pdf Description: DIODE GEN PURP 300V 8A TO262AA
товар відсутній
VS-8ETH06-N3 VS-8ETH06-N3 Vishay General Semiconductor - Diodes Division vs-8eth06fp.pdf Description: DIODE GEN PURP 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товар відсутній
VS-8ETL06FP-N3 VS-8ETL06FP-N3 Vishay General Semiconductor - Diodes Division vs-8eth06fp.pdf Description: DIODE GEN PURP 600V 8A TO220
товар відсутній
VS-8ETX06-N3 VS-8ETX06-N3 Vishay General Semiconductor - Diodes Division vs-8etx06fp.pdf Description: DIODE GEN PURP 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 17 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товар відсутній
VS-8EWF02SPBF VS-8EWF02SPBF Vishay General Semiconductor - Diodes Division 8EWF..SPbF.pdf Description: DIODE GEN PURP 200V 8A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
товар відсутній
VS-8EWF04SPBF VS-8EWF04SPBF Vishay General Semiconductor - Diodes Division 8EWF..SPbF.pdf Description: DIODE GEN PURP 400V 8A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
товар відсутній
VS-8EWF06SPBF VS-8EWF06SPBF Vishay General Semiconductor - Diodes Division 8EWF..SPbF.pdf Description: DIODE GEN PURP 600V 8A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252, (D-Pak)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
товар відсутній
VS-8EWF10SPBF VS-8EWF10SPBF Vishay General Semiconductor - Diodes Division VS-8EWF(10,12)SPbF.pdf Description: DIODE GEN PURP 1KV 8A TO252
товар відсутній
VS-8EWF12S-M3 VS-8EWF12S-M3 Vishay General Semiconductor - Diodes Division vs-8ewf12sm.pdf Description: DIODE GEN PURP 1.2KV 8A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 270 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 2572 шт:
термін постачання 21-31 дні (днів)
2+232.73 грн
75+ 177.56 грн
150+ 152.19 грн
525+ 126.96 грн
1050+ 108.71 грн
2025+ 102.36 грн
Мінімальне замовлення: 2
VS-8EWF12SPBF VS-8EWF12SPBF Vishay General Semiconductor - Diodes Division VS-8EWF%2810%2C12%29SPbF.pdf Description: DIODE GEN PURP 1.2KV 8A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
товар відсутній
VS-8EWH02FN-M3 VS-8EWH02FN-M3 Vishay General Semiconductor - Diodes Division vs-8ewh02fn.pdf Description: DIODE GEN PURP 200V 8A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 1293 шт:
термін постачання 21-31 дні (днів)
5+67.15 грн
75+ 53.37 грн
150+ 38.74 грн
525+ 30.38 грн
1050+ 25.85 грн
Мінімальне замовлення: 5
VS-43CTT100
VS-43CTT100
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 40 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
товар відсутній
VS-48CTQ060-N3 VS-48CTQ060(PbF,N3).pdf
VS-48CTQ060-N3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 60V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 40 A
Current - Reverse Leakage @ Vr: 2 mA @ 60 V
товар відсутній
VS-4EWH02FNHM3 vs-ewh02hfn.pdf
VS-4EWH02FNHM3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 4A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 4 A
Current - Reverse Leakage @ Vr: 3 µA @ 200 V
Qualification: AEC-Q101
товар відсутній
VS-50WQ03FN-M3 50wq03fn.pdf
VS-50WQ03FN-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 5.5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 590pF @ 5V, 1MHz
Current - Average Rectified (Io): 5.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 5 A
Current - Reverse Leakage @ Vr: 3 mA @ 30 V
на замовлення 2852 шт:
термін постачання 21-31 дні (днів)
VS-50WQ06FN-M3 50wq06fn.pdf
VS-50WQ06FN-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 5.5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 360pF @ 5V, 1MHz
Current - Average Rectified (Io): 5.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 5 A
Current - Reverse Leakage @ Vr: 3 mA @ 60 V
на замовлення 4236 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6+52.65 грн
75+ 42.03 грн
150+ 30.5 грн
525+ 23.92 грн
1050+ 20.36 грн
2025+ 18.13 грн
Мінімальне замовлення: 6
VS-50WQ10FNHM3 vs50wq10fn.pdf
VS-50WQ10FNHM3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 5.5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 183pF @ 5V, 1MHz
Current - Average Rectified (Io): 5.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Qualification: AEC-Q101
товар відсутній
VS-50WQ10FN-M3 vs-50wq10fn.pdf
VS-50WQ10FN-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 5.5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 183pF @ 5V, 1MHz
Current - Average Rectified (Io): 5.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
на замовлення 10399 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6+53.41 грн
75+ 42.84 грн
150+ 31.1 грн
525+ 24.39 грн
1050+ 20.75 грн
2025+ 18.48 грн
5025+ 17.22 грн
10050+ 15.95 грн
Мінімальне замовлення: 6
VS-5EWH06FNHM3 vs-5ewh06fnhm3.pdf
VS-5EWH06FNHM3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 5A D-PAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
товар відсутній
VS-5EWH06FN-M3 vs-5ewh06fn-m3.pdf
VS-5EWH06FN-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 5A D-PAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 2713 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6+60.28 грн
75+ 47.67 грн
150+ 34.6 грн
525+ 27.13 грн
1050+ 23.09 грн
2025+ 20.56 грн
Мінімальне замовлення: 6
VS-60APF12PBF
VS-60APF12PBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 60A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 480 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
товар відсутній
VS-60APU06HN3 vs-60epu06hn3.pdf
VS-60APU06HN3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 60A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 81 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.68 V @ 60 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товар відсутній
VS-60APU06-N3 vs-60epu06-n3.pdf
VS-60APU06-N3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 60A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 81 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.68 V @ 60 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
на замовлення 96 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+190.76 грн
10+ 165.11 грн
Мінімальне замовлення: 2
VS-60CPH03-N3 vs-60cph03-n3.pdf
VS-60CPH03-N3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 300V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 60 µA @ 300 V
на замовлення 293 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+541.76 грн
25+ 416.8 грн
100+ 372.91 грн
VS-60CPH03PBF vs-60cph03-n3.pdf
VS-60CPH03PBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 300V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 60 µA @ 300 V
товар відсутній
VS-60CPU06-F vs-60cpu06f.pdf
VS-60CPU06-F
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
на замовлення 383 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+430.36 грн
25+ 328.39 грн
100+ 281.47 грн
VS-60CTQ035-N3 VS-60CTQ0xx(PBF,-N3).pdf
VS-60CTQ035-N3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 35V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 30 A
Current - Reverse Leakage @ Vr: 2 mA @ 35 V
товар відсутній
VS-60CTQ035PBF VS-60CTQ0xx(PBF,-N3).pdf
VS-60CTQ035PBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 35V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 30 A
Current - Reverse Leakage @ Vr: 2 mA @ 35 V
товар відсутній
VS-60CTQ040PBF VS-60CTQ0xx(PBF,-N3).pdf
VS-60CTQ040PBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 40V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 30 A
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
товар відсутній
VS-60CTQ045-N3 VS-60CTQ0xx(PBF,-N3).pdf
VS-60CTQ045-N3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 45V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 60 A
Current - Reverse Leakage @ Vr: 2 mA @ 45 V
товар відсутній
VS-60EPS16PBF
VS-60EPS16PBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.6KV 60A TO247AC
товар відсутній
VS-60EPU04-N3 vs-60epu04-n3.pdf
VS-60EPU04-N3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 400V 60A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 60 A
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
на замовлення 460 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+196.1 грн
25+ 149.57 грн
100+ 128.2 грн
Мінімальне замовлення: 2
VS-60EPU06HN3 vs-60epu06hn3.pdf
VS-60EPU06HN3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 600V 60A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 81 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.68 V @ 60 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Qualification: AEC-Q101
товар відсутній
VS-63CPQ100GPBF VS-63CPQ100G(PbF,-N3).pdf
VS-63CPQ100GPBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 60 A
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
товар відсутній
VS-63CPQ100-N3 VS-63CPQ100PbF%2CN3.pdf
VS-63CPQ100-N3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 60 A
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
на замовлення 546 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+437.22 грн
25+ 335.94 грн
100+ 300.56 грн
500+ 248.88 грн
VS-63CTQ100GPBF VS-63CTQ100G(PbF,-N3).pdf
VS-63CTQ100GPBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
товар відсутній
VS-63CTQ100-N3 VS-63CTQ100G(PbF,-N3).pdf
VS-63CTQ100-N3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
товар відсутній
VS-6CWH02FNHM3 vs-6cwh02fnhm3.pdf
VS-6CWH02FNHM3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 3A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 19 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
VS-6CWQ06FN-M3 vs-6cwq06fn.pdf
VS-6CWQ06FN-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 60V 3.5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 60 V
на замовлення 8580 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6+54.18 грн
75+ 43.15 грн
150+ 31.32 грн
525+ 24.56 грн
1050+ 20.9 грн
2025+ 18.61 грн
5025+ 17.34 грн
Мінімальне замовлення: 6
VS-6CWQ10FNHM3 vs-6cwq10fn.pdf
VS-6CWQ10FNHM3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 100V 3.5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 6 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2974 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+132.77 грн
10+ 106.62 грн
100+ 84.85 грн
500+ 67.38 грн
1000+ 57.17 грн
Мінімальне замовлення: 3
VS-6CWQ10FN-M3 6cwq10fn.pdf
VS-6CWQ10FN-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 100V 3.5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 6 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
на замовлення 4490 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6+57.23 грн
75+ 45.05 грн
150+ 32.7 грн
525+ 25.64 грн
1050+ 21.82 грн
2025+ 19.43 грн
Мінімальне замовлення: 6
VS-6EWH06FNHM3 vs-6ewx06fn.pdf
VS-6EWH06FNHM3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 6A D-PAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 27 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Qualification: AEC-Q101
товар відсутній
VS-6TQ035-N3 VS-6TQ0xx(PBF,-N3).pdf
VS-6TQ035-N3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 6A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 5V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 6 A
Current - Reverse Leakage @ Vr: 800 µA @ 35 V
товар відсутній
VS-6TQ045-N3 VS-6TQ0xx%28PBF%2C-N3%29.pdf
VS-6TQ045-N3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 6A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 5V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 6 A
Current - Reverse Leakage @ Vr: 800 µA @ 45 V
товар відсутній
VS-80APS12-M3 vs-80aps-m3series.pdf
VS-80APS12-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 80A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 80A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.17 V @ 80 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 3568 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+446.38 грн
25+ 341.06 грн
100+ 292.35 грн
500+ 243.87 грн
1000+ 208.81 грн
2000+ 196.62 грн
VS-80APS16-M3 vs-80aps16-m3.pdf
VS-80APS16-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.6KV 80A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 80A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.17 V @ 80 A
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
товар відсутній
VS-80APS16PBF
VS-80APS16PBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.6KV 80A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 80A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.17 V @ 80 A
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
товар відсутній
VS-80CNQ035ASLPBF VS-80CNQ0(35,40,45)APbF.pdf
VS-80CNQ035ASLPBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 40A D618SL
товар відсутній
VS-80CNQ035ASMPBF VS-80CNQ0(35,40,45)APbF.pdf
VS-80CNQ035ASMPBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 40A D618SM
товар відсутній
VS-80CNQ040ASLPBF VS-80CNQ0(35,40,45)APbF.pdf
VS-80CNQ040ASLPBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 40A D618SL
товар відсутній
VS-80CNQ040ASMPBF VS-80CNQ0(35,40,45)APbF.pdf
VS-80CNQ040ASMPBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 40A D618SM
товар відсутній
VS-80CNQ045ASLPBF VS-80CNQ0(35,40,45)APbF.pdf
VS-80CNQ045ASLPBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 40A D618SL
товар відсутній
VS-80CNQ045ASMPBF VS-80CNQ0(35,40,45)APbF.pdf
VS-80CNQ045ASMPBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 40A D618SM
товар відсутній
VS-80CPH03-F3 vs-80cph03-n3.pdf
VS-80CPH03-F3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 300V 20A TO247AC
товар відсутній
VS-80CPH03-N3 vs-80cph03-n3.pdf
VS-80CPH03-N3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 300V 20A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 40 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
товар відсутній
VS-80CPQ020-N3 vs-80cpq020-n3.pdf
VS-80CPQ020-N3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 20V 40A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 40 A
Current - Reverse Leakage @ Vr: 5.5 mA @ 20 V
на замовлення 796 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+375.42 грн
25+ 286.18 грн
100+ 245.29 грн
500+ 204.61 грн
VS-80CPU02-F3
VS-80CPU02-F3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 40A TO247AC
товар відсутній
VS-80EBU02HF4
VS-80EBU02HF4
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 80A POWERTAB
Packaging: Tube
Package / Case: PowerTab®
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 80A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 80 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
VS-80EBU04HF4
VS-80EBU04HF4
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 80A POWERTAB
Packaging: Tube
Package / Case: PowerTab®
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 87 ns
Technology: Standard
Current - Average Rectified (Io): 80A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 80 A
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
Qualification: AEC-Q101
на замовлення 209 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+427.3 грн
25+ 328.71 грн
100+ 294.12 грн
VS-8CWH02FNHM3 vs8cwh02fn.pdf
VS-8CWH02FNHM3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 4A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 27 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 4 A
Current - Reverse Leakage @ Vr: 4 µA @ 200 V
Qualification: AEC-Q101
товар відсутній
VS-8ETH03-1PBF VS-8ETH03SPbF,%20VS-8ETH03-1PbF.pdf
VS-8ETH03-1PBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 300V 8A TO262AA
товар відсутній
VS-8ETH06-N3 vs-8eth06fp.pdf
VS-8ETH06-N3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товар відсутній
VS-8ETL06FP-N3 vs-8eth06fp.pdf
VS-8ETL06FP-N3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A TO220
товар відсутній
VS-8ETX06-N3 vs-8etx06fp.pdf
VS-8ETX06-N3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 17 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товар відсутній
VS-8EWF02SPBF 8EWF..SPbF.pdf
VS-8EWF02SPBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 8A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
товар відсутній
VS-8EWF04SPBF 8EWF..SPbF.pdf
VS-8EWF04SPBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 8A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
товар відсутній
VS-8EWF06SPBF 8EWF..SPbF.pdf
VS-8EWF06SPBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252, (D-Pak)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
товар відсутній
VS-8EWF10SPBF VS-8EWF(10,12)SPbF.pdf
VS-8EWF10SPBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 8A TO252
товар відсутній
VS-8EWF12S-M3 vs-8ewf12sm.pdf
VS-8EWF12S-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 8A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 270 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 2572 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+232.73 грн
75+ 177.56 грн
150+ 152.19 грн
525+ 126.96 грн
1050+ 108.71 грн
2025+ 102.36 грн
Мінімальне замовлення: 2
VS-8EWF12SPBF VS-8EWF%2810%2C12%29SPbF.pdf
VS-8EWF12SPBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 8A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
товар відсутній
VS-8EWH02FN-M3 vs-8ewh02fn.pdf
VS-8EWH02FN-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 8A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 1293 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+67.15 грн
75+ 53.37 грн
150+ 38.74 грн
525+ 30.38 грн
1050+ 25.85 грн
Мінімальне замовлення: 5
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