Технічний опис VS-8EWF12SPBF VISHAY
Description: DIODE GEN PURP 1.2KV 8A TO252, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-252AA (DPAK), Operating Temperature - Junction: -40°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A, Current - Reverse Leakage @ Vr: 100 µA @ 1200 V.
Інші пропозиції VS-8EWF12SPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| VS-8EWF12SPBF | Виробник : Vishay |
 Surface Mount Fast Soft Recovery Rectifier Diode |
товар відсутній |
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VS-8EWF12SPBF | Виробник : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 8A TO252 Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-252AA (DPAK) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
товар відсутній |
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VS-8EWF12SPBF | Виробник : Vishay Semiconductors |
Rectifiers RECOMMENDED ALT 8EWF12S-M3 |
товар відсутній |