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VS-MURB1620CTHM3 VS-MURB1620CTHM3 Vishay General Semiconductor - Diodes Division vs-murb1620cthm3.pdf Description: DIODE ARRAY GP 200V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
Qualification: AEC-Q101
товар відсутній
VS-MURB2020CT-1HM3 VS-MURB2020CT-1HM3 Vishay General Semiconductor - Diodes Division vs-murb2020cthm3.pdf Description: DIODE ARRAY GP 200V 10A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 21 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 8 A
Current - Reverse Leakage @ Vr: 15 µA @ 200 V
Qualification: AEC-Q101
товар відсутній
VS-STPS30L30CT-N3 VS-STPS30L30CT-N3 Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 30V 15A TO220AB
товар відсутній
VS-STPS40L15CT-N3 VS-STPS40L15CT-N3 Vishay General Semiconductor - Diodes Division VS-STPS40L15CT(PbF,N3).pdf Description: DIODE ARR SCHOTT 15V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 19 A
Current - Reverse Leakage @ Vr: 10 mA @ 15 V
товар відсутній
VT10200C-M3/4W VT10200C-M3/4W Vishay General Semiconductor - Diodes Division vt10200c-m3.pdf Description: DIODE ARR SCHOTT 200V 5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
товар відсутній
VT1045CHM3/4W VT1045CHM3/4W Vishay General Semiconductor - Diodes Division vt1045c.pdf Description: DIODE ARRAY SCHOT 45V 5A TO220AB
товар відсутній
VT1045C-M3/4W VT1045C-M3/4W Vishay General Semiconductor - Diodes Division vt1045c.pdf Description: DIODE ARRAY SCHOT 45V 5A TO220AB
товар відсутній
VT2060G-E3/4W VT2060G-E3/4W Vishay General Semiconductor - Diodes Division vt2060g.pdf Description: DIODE ARR SCHOTT 60V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 700 µA @ 60 V
товар відсутній
VT2080C-E3/4W VT2080C-E3/4W Vishay General Semiconductor - Diodes Division vt2080c.pdf Description: DIODE ARR SCHOTT 80V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 10 A
Current - Reverse Leakage @ Vr: 600 µA @ 80 V
товар відсутній
VT2080C-M3/4W VT2080C-M3/4W Vishay General Semiconductor - Diodes Division vt2080c.pdf Description: DIODE ARR SCHOTT 80V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 10 A
Current - Reverse Leakage @ Vr: 600 µA @ 80 V
Qualification: AEC-Q101
товар відсутній
VT2080S-E3/4W VT2080S-E3/4W Vishay General Semiconductor - Diodes Division vt2080s.pdf Description: DIODE SCHOTTKY 80V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 20 A
Current - Reverse Leakage @ Vr: 700 µA @ 80 V
товар відсутній
VT2080S-M3/4W VT2080S-M3/4W Vishay General Semiconductor - Diodes Division vt2080s.pdf Description: DIODE SCHOTTKY 80V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 20 A
Current - Reverse Leakage @ Vr: 700 µA @ 80 V
товар відсутній
VT3045C-M3/4W VT3045C-M3/4W Vishay General Semiconductor - Diodes Division vt3045c.pdf Description: DIODE SCHOTTKY 45V 15A TO-220AB
на замовлення 2218 шт:
термін постачання 21-31 дні (днів)
2+157.19 грн
10+ 136.3 грн
100+ 109.53 грн
500+ 84.45 грн
1000+ 75.12 грн
Мінімальне замовлення: 2
VT3060G-E3/4W VT3060G-E3/4W Vishay General Semiconductor - Diodes Division vt3060g.pdf Description: DIODE ARR SCHOTT 60V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 15 A
Current - Reverse Leakage @ Vr: 850 µA @ 60 V
товар відсутній
VT3080SHM3/4W VT3080SHM3/4W Vishay General Semiconductor - Diodes Division vt3080s.pdf Description: DIODE SCHOTTKY 80V 30A TO220-3
товар відсутній
VT3080S-M3/4W VT3080S-M3/4W Vishay General Semiconductor - Diodes Division vt3080s.pdf Description: DIODE SCHOTTKY 80V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 80 V
товар відсутній
VT30L60C-E3/4W VT30L60C-E3/4W Vishay General Semiconductor - Diodes Division vt30l60c.pdf Description: DIODE ARR SCHOTT 60V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 15 A
Current - Reverse Leakage @ Vr: 4 mA @ 60 V
на замовлення 7990 шт:
термін постачання 21-31 дні (днів)
3+146.5 грн
10+ 117.2 грн
100+ 93.25 грн
500+ 74.05 грн
1000+ 62.83 грн
2000+ 59.69 грн
5000+ 56.5 грн
Мінімальне замовлення: 3
VT30L60C-M3/4W VT30L60C-M3/4W Vishay General Semiconductor - Diodes Division vt30l60.pdf Description: DIODE ARR SCHOTT 60V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 15 A
Current - Reverse Leakage @ Vr: 4 mA @ 60 V
Qualification: AEC-Q101
товар відсутній
VT4045C-M3/4W VT4045C-M3/4W Vishay General Semiconductor - Diodes Division vt4045c.pdf Description: DIODE SCHOTTKY 45V 20A TO-220AB
товар відсутній
VT40L45PW-M3/4W VT40L45PW-M3/4W Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 45V 20A TMBS
товар відсутній
VT760-E3/4W VT760-E3/4W Vishay General Semiconductor - Diodes Division vt760.pdf Description: DIODE SCHOTTKY 60V 7.5A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 7.5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 700 µA @ 60 V
товар відсутній
VT760-M3/4W VT760-M3/4W Vishay General Semiconductor - Diodes Division vt760.pdf Description: DIODE SCHOTTKY 60V 7.5A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 7.5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 700 µA @ 60 V
товар відсутній
VS-111RKI40 Vishay General Semiconductor - Diodes Division vs-110rkipb.pdf Description: SCR 400V 172A TO209AC
Packaging: Bulk
Package / Case: TO-209AC, TO-94-4, Stud
Mounting Type: Chassis, Stud Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1750A, 1830A
Current - On State (It (AV)) (Max): 110 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - On State (Vtm) (Max): 1.57 V
Current - Off State (Max): 20 mA
Supplier Device Package: TO-209AC (TO-94)
Current - On State (It (RMS)) (Max): 172 A
Voltage - Off State: 400 V
товар відсутній
VS-ST700C12L1 VS-ST700C12L1 Vishay General Semiconductor - Diodes Division vs-st700clseries.pdf Description: SCR 1.2KV 1857A B-PUK
товар відсутній
VS-VSKL142/14PBF VS-VSKL142/14PBF Vishay General Semiconductor - Diodes Division vs-vsk136pbfseries.pdf Description: MODULE DIODE 140A INT-A-PAK
Packaging: Bulk
Package / Case: INT-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4500A, 4712A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 140 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 310 A
Voltage - Off State: 1.4 kV
товар відсутній
VS-2EJH02HM3/6B VS-2EJH02HM3/6B Vishay General Semiconductor - Diodes Division vs-2ejh02hm3.pdf Description: DIODE GEN PURP 200V 2A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
на замовлення 28000 шт:
термін постачання 21-31 дні (днів)
14000+10.07 грн
28000+ 9.48 грн
Мінімальне замовлення: 14000
VS-2EJH02-M3/6B VS-2EJH02-M3/6B Vishay General Semiconductor - Diodes Division vs-2ejh02-m3.pdf Description: DIODE GEN PURP 200V 2A DO221AC
товар відсутній
VS-3EJH01HM3/6B VS-3EJH01HM3/6B Vishay General Semiconductor - Diodes Division vs-3ejh01hm3.pdf Description: DIODE GEN PURP 100V 3A DO221AC
товар відсутній
VS-3EJH01-M3/6B VS-3EJH01-M3/6B Vishay General Semiconductor - Diodes Division vs-3ejh01-m3.pdf Description: DIODE GEN PURP 100V 3A DO221AC
товар відсутній
VS-2EJH02HM3/6B VS-2EJH02HM3/6B Vishay General Semiconductor - Diodes Division vs-2ejh02hm3.pdf Description: DIODE GEN PURP 200V 2A DO221AC
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
на замовлення 29089 шт:
термін постачання 21-31 дні (днів)
10+33.57 грн
11+ 27.92 грн
100+ 19.4 грн
500+ 14.21 грн
1000+ 11.55 грн
2000+ 10.33 грн
5000+ 9.64 грн
Мінімальне замовлення: 10
VS-2EJH02-M3/6B VS-2EJH02-M3/6B Vishay General Semiconductor - Diodes Division vs-2ejh02-m3.pdf Description: DIODE GEN PURP 200V 2A DO221AC
на замовлення 1595 шт:
термін постачання 21-31 дні (днів)
VS-3EJH01HM3/6B VS-3EJH01HM3/6B Vishay General Semiconductor - Diodes Division vs-3ejh01hm3.pdf Description: DIODE GEN PURP 100V 3A DO221AC
на замовлення 181 шт:
термін постачання 21-31 дні (днів)
VS-3EJH01-M3/6B VS-3EJH01-M3/6B Vishay General Semiconductor - Diodes Division vs-3ejh01-m3.pdf Description: DIODE GEN PURP 100V 3A DO221AC
на замовлення 7962 шт:
термін постачання 21-31 дні (днів)
SMBJ18CA-M3/52 SMBJ18CA-M3/52 Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 18VWM 29.2VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
товар відсутній
SMBJ16CA-M3/52 SMBJ16CA-M3/52 Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 16VWM 26VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.1A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
товар відсутній
VS-1EFH01WHM3-18 VS-1EFH01WHM3-18 Vishay General Semiconductor - Diodes Division VS-1EFH01WHM3.pdf Description: DIODE GEN PURP 100V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
товар відсутній
VS-1EFH02WHM3-18 VS-1EFH02WHM3-18 Vishay General Semiconductor - Diodes Division VS-1EFH02WHM3.pdf Description: DIODE GEN PURP 200V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
товар відсутній
VS-1EFH01W-M3-18 VS-1EFH01W-M3-18 Vishay General Semiconductor - Diodes Division VS-1EFH01W-M3.pdf Description: DIODE GEN PURP 100V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
товар відсутній
VS-1EFH02W-M3-18 VS-1EFH02W-M3-18 Vishay General Semiconductor - Diodes Division VS-1EFH02W-M3.pdf Description: DIODE GEN PURP 200V 1A SMF
товар відсутній
VS-1EFH01WHM3-18 VS-1EFH01WHM3-18 Vishay General Semiconductor - Diodes Division VS-1EFH01WHM3.pdf Description: DIODE GEN PURP 100V 1A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
товар відсутній
VS-1EFH02WHM3-18 VS-1EFH02WHM3-18 Vishay General Semiconductor - Diodes Division VS-1EFH02WHM3.pdf Description: DIODE GEN PURP 200V 1A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
товар відсутній
VS-1EFH01W-M3-18 VS-1EFH01W-M3-18 Vishay General Semiconductor - Diodes Division VS-1EFH01W-M3.pdf Description: DIODE GEN PURP 100V 1A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
товар відсутній
VS-1EFH02W-M3-18 VS-1EFH02W-M3-18 Vishay General Semiconductor - Diodes Division VS-1EFH02W-M3.pdf Description: DIODE GEN PURP 200V 1A SMF
товар відсутній
V20DL45-M3/I V20DL45-M3/I Vishay General Semiconductor - Diodes Division v20dl45.pdf Description: DIODE SCHOTTKY 45V 20A TO263AC
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
2000+32.21 грн
Мінімальне замовлення: 2000
V30DL45BP-M3/I V30DL45BP-M3/I Vishay General Semiconductor - Diodes Division v30dl45bp.pdf Description: DIODE SCHOTTKY 45V 30A SMPD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 30 A
Current - Reverse Leakage @ Vr: 3 mA @ 45 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
2000+29.35 грн
Мінімальне замовлення: 2000
V20DL45-M3/I V20DL45-M3/I Vishay General Semiconductor - Diodes Division v20dl45.pdf Description: DIODE SCHOTTKY 45V 20A TO263AC
на замовлення 9778 шт:
термін постачання 21-31 дні (днів)
5+67.91 грн
10+ 58.78 грн
100+ 45.83 грн
500+ 35.53 грн
1000+ 29.11 грн
Мінімальне замовлення: 5
V30DL45BP-M3/I V30DL45BP-M3/I Vishay General Semiconductor - Diodes Division v30dl45bp.pdf Description: DIODE SCHOTTKY 45V 30A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 30 A
Current - Reverse Leakage @ Vr: 3 mA @ 45 V
на замовлення 6329 шт:
термін постачання 21-31 дні (днів)
5+70.96 грн
10+ 55.92 грн
100+ 43.48 грн
500+ 34.59 грн
1000+ 28.18 грн
Мінімальне замовлення: 5
V40DL45BP-M3/I V40DL45BP-M3/I Vishay General Semiconductor - Diodes Division v40dl45bp.pdf Description: DIODE SCHOTTKY 45V 40A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 40 A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
2000+35.16 грн
Мінімальне замовлення: 2000
V40DL45BP-M3/I V40DL45BP-M3/I Vishay General Semiconductor - Diodes Division v40dl45bp.pdf Description: DIODE SCHOTTKY 45V 40A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 40 A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
на замовлення 5974 шт:
термін постачання 21-31 дні (днів)
4+84.7 грн
10+ 66.94 грн
100+ 52.09 грн
500+ 41.43 грн
1000+ 33.75 грн
Мінімальне замовлення: 4
PLZ18A-G3/H PLZ18A-G3/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 16V 500MW DO219AC
товар відсутній
PLZ18C-G3/H PLZ18C-G3/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 18V 500MW DO219AC
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 13 V
товар відсутній
PLZ24B-G3/H PLZ24B-G3/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 23.19V 500MW DO219AC
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 23.19 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 19 V
товар відсутній
SE10DGHM3/I SE10DGHM3/I Vishay General Semiconductor - Diodes Division se10db-m3.pdf Description: DIODE GEN PURP 400V 3A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 67pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A
Current - Reverse Leakage @ Vr: 15 µA @ 400 V
Qualification: AEC-Q101
товар відсутній
V40DL45-M3/I V40DL45-M3/I Vishay General Semiconductor - Diodes Division v40dl45.pdf Description: DIODE SCHOTTKY 45V 40A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 40 A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
2000+35.16 грн
Мінімальне замовлення: 2000
V40M150C-M3/4W V40M150C-M3/4W Vishay General Semiconductor - Diodes Division v40m150c.pdf Description: DIODE SCHOTTKY 150V TO220
на замовлення 22 шт:
термін постачання 21-31 дні (днів)
V60M120C-M3/4W V60M120C-M3/4W Vishay General Semiconductor - Diodes Division v60m120c.pdf Description: DIODE SCHOTTKY 120V TO220
на замовлення 1888 шт:
термін постачання 21-31 дні (днів)
PLZ18A-G3/H PLZ18A-G3/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 16V 500MW DO219AC
на замовлення 1861 шт:
термін постачання 21-31 дні (днів)
13+23.65 грн
16+ 18.88 грн
100+ 10.04 грн
500+ 6.2 грн
1000+ 4.22 грн
Мінімальне замовлення: 13
PLZ18C-G3/H PLZ18C-G3/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 18V 500MW DO219AC
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 13 V
на замовлення 1432 шт:
термін постачання 21-31 дні (днів)
14+22.13 грн
21+ 14.55 грн
100+ 7.11 грн
500+ 5.56 грн
1000+ 3.87 грн
Мінімальне замовлення: 14
PLZ24B-G3/H PLZ24B-G3/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 23.19V 500MW DO219AC
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 23.19 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 19 V
товар відсутній
SE10DGHM3/I SE10DGHM3/I Vishay General Semiconductor - Diodes Division se10db-m3.pdf Description: DIODE GEN PURP 400V 3A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 67pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A
Current - Reverse Leakage @ Vr: 15 µA @ 400 V
Qualification: AEC-Q101
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
5+65.62 грн
10+ 54.52 грн
Мінімальне замовлення: 5
VS-MURB1620CTHM3 vs-murb1620cthm3.pdf
VS-MURB1620CTHM3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
Qualification: AEC-Q101
товар відсутній
VS-MURB2020CT-1HM3 vs-murb2020cthm3.pdf
VS-MURB2020CT-1HM3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 10A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 21 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 8 A
Current - Reverse Leakage @ Vr: 15 µA @ 200 V
Qualification: AEC-Q101
товар відсутній
VS-STPS30L30CT-N3
VS-STPS30L30CT-N3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 15A TO220AB
товар відсутній
VS-STPS40L15CT-N3 VS-STPS40L15CT(PbF,N3).pdf
VS-STPS40L15CT-N3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 15V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 19 A
Current - Reverse Leakage @ Vr: 10 mA @ 15 V
товар відсутній
VT10200C-M3/4W vt10200c-m3.pdf
VT10200C-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 200V 5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
товар відсутній
VT1045CHM3/4W vt1045c.pdf
VT1045CHM3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOT 45V 5A TO220AB
товар відсутній
VT1045C-M3/4W vt1045c.pdf
VT1045C-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOT 45V 5A TO220AB
товар відсутній
VT2060G-E3/4W vt2060g.pdf
VT2060G-E3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 60V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 700 µA @ 60 V
товар відсутній
VT2080C-E3/4W vt2080c.pdf
VT2080C-E3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 80V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 10 A
Current - Reverse Leakage @ Vr: 600 µA @ 80 V
товар відсутній
VT2080C-M3/4W vt2080c.pdf
VT2080C-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 80V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 10 A
Current - Reverse Leakage @ Vr: 600 µA @ 80 V
Qualification: AEC-Q101
товар відсутній
VT2080S-E3/4W vt2080s.pdf
VT2080S-E3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 80V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 20 A
Current - Reverse Leakage @ Vr: 700 µA @ 80 V
товар відсутній
VT2080S-M3/4W vt2080s.pdf
VT2080S-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 80V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 20 A
Current - Reverse Leakage @ Vr: 700 µA @ 80 V
товар відсутній
VT3045C-M3/4W vt3045c.pdf
VT3045C-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 15A TO-220AB
на замовлення 2218 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+157.19 грн
10+ 136.3 грн
100+ 109.53 грн
500+ 84.45 грн
1000+ 75.12 грн
Мінімальне замовлення: 2
VT3060G-E3/4W vt3060g.pdf
VT3060G-E3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 60V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 15 A
Current - Reverse Leakage @ Vr: 850 µA @ 60 V
товар відсутній
VT3080SHM3/4W vt3080s.pdf
VT3080SHM3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 80V 30A TO220-3
товар відсутній
VT3080S-M3/4W vt3080s.pdf
VT3080S-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 80V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 80 V
товар відсутній
VT30L60C-E3/4W vt30l60c.pdf
VT30L60C-E3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 60V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 15 A
Current - Reverse Leakage @ Vr: 4 mA @ 60 V
на замовлення 7990 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+146.5 грн
10+ 117.2 грн
100+ 93.25 грн
500+ 74.05 грн
1000+ 62.83 грн
2000+ 59.69 грн
5000+ 56.5 грн
Мінімальне замовлення: 3
VT30L60C-M3/4W vt30l60.pdf
VT30L60C-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 60V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 15 A
Current - Reverse Leakage @ Vr: 4 mA @ 60 V
Qualification: AEC-Q101
товар відсутній
VT4045C-M3/4W vt4045c.pdf
VT4045C-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 20A TO-220AB
товар відсутній
VT40L45PW-M3/4W
VT40L45PW-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 20A TMBS
товар відсутній
VT760-E3/4W vt760.pdf
VT760-E3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 7.5A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 7.5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 700 µA @ 60 V
товар відсутній
VT760-M3/4W vt760.pdf
VT760-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 7.5A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 7.5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 700 µA @ 60 V
товар відсутній
VS-111RKI40 vs-110rkipb.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR 400V 172A TO209AC
Packaging: Bulk
Package / Case: TO-209AC, TO-94-4, Stud
Mounting Type: Chassis, Stud Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1750A, 1830A
Current - On State (It (AV)) (Max): 110 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - On State (Vtm) (Max): 1.57 V
Current - Off State (Max): 20 mA
Supplier Device Package: TO-209AC (TO-94)
Current - On State (It (RMS)) (Max): 172 A
Voltage - Off State: 400 V
товар відсутній
VS-ST700C12L1 vs-st700clseries.pdf
VS-ST700C12L1
Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR 1.2KV 1857A B-PUK
товар відсутній
VS-VSKL142/14PBF vs-vsk136pbfseries.pdf
VS-VSKL142/14PBF
Виробник: Vishay General Semiconductor - Diodes Division
Description: MODULE DIODE 140A INT-A-PAK
Packaging: Bulk
Package / Case: INT-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4500A, 4712A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 140 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 310 A
Voltage - Off State: 1.4 kV
товар відсутній
VS-2EJH02HM3/6B vs-2ejh02hm3.pdf
VS-2EJH02HM3/6B
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 2A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
на замовлення 28000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
14000+10.07 грн
28000+ 9.48 грн
Мінімальне замовлення: 14000
VS-2EJH02-M3/6B vs-2ejh02-m3.pdf
VS-2EJH02-M3/6B
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 2A DO221AC
товар відсутній
VS-3EJH01HM3/6B vs-3ejh01hm3.pdf
VS-3EJH01HM3/6B
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 3A DO221AC
товар відсутній
VS-3EJH01-M3/6B vs-3ejh01-m3.pdf
VS-3EJH01-M3/6B
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 3A DO221AC
товар відсутній
VS-2EJH02HM3/6B vs-2ejh02hm3.pdf
VS-2EJH02HM3/6B
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 2A DO221AC
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
на замовлення 29089 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+33.57 грн
11+ 27.92 грн
100+ 19.4 грн
500+ 14.21 грн
1000+ 11.55 грн
2000+ 10.33 грн
5000+ 9.64 грн
Мінімальне замовлення: 10
VS-2EJH02-M3/6B vs-2ejh02-m3.pdf
VS-2EJH02-M3/6B
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 2A DO221AC
на замовлення 1595 шт:
термін постачання 21-31 дні (днів)
VS-3EJH01HM3/6B vs-3ejh01hm3.pdf
VS-3EJH01HM3/6B
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 3A DO221AC
на замовлення 181 шт:
термін постачання 21-31 дні (днів)
VS-3EJH01-M3/6B vs-3ejh01-m3.pdf
VS-3EJH01-M3/6B
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 3A DO221AC
на замовлення 7962 шт:
термін постачання 21-31 дні (днів)
SMBJ18CA-M3/52 smbj.pdf
SMBJ18CA-M3/52
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 18VWM 29.2VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
товар відсутній
SMBJ16CA-M3/52 smbj.pdf
SMBJ16CA-M3/52
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 16VWM 26VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.1A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
товар відсутній
VS-1EFH01WHM3-18 VS-1EFH01WHM3.pdf
VS-1EFH01WHM3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
товар відсутній
VS-1EFH02WHM3-18 VS-1EFH02WHM3.pdf
VS-1EFH02WHM3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
товар відсутній
VS-1EFH01W-M3-18 VS-1EFH01W-M3.pdf
VS-1EFH01W-M3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
товар відсутній
VS-1EFH02W-M3-18 VS-1EFH02W-M3.pdf
VS-1EFH02W-M3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A SMF
товар відсутній
VS-1EFH01WHM3-18 VS-1EFH01WHM3.pdf
VS-1EFH01WHM3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
товар відсутній
VS-1EFH02WHM3-18 VS-1EFH02WHM3.pdf
VS-1EFH02WHM3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
товар відсутній
VS-1EFH01W-M3-18 VS-1EFH01W-M3.pdf
VS-1EFH01W-M3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
товар відсутній
VS-1EFH02W-M3-18 VS-1EFH02W-M3.pdf
VS-1EFH02W-M3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A SMF
товар відсутній
V20DL45-M3/I v20dl45.pdf
V20DL45-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 20A TO263AC
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2000+32.21 грн
Мінімальне замовлення: 2000
V30DL45BP-M3/I v30dl45bp.pdf
V30DL45BP-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 30A SMPD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 30 A
Current - Reverse Leakage @ Vr: 3 mA @ 45 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2000+29.35 грн
Мінімальне замовлення: 2000
V20DL45-M3/I v20dl45.pdf
V20DL45-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 20A TO263AC
на замовлення 9778 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+67.91 грн
10+ 58.78 грн
100+ 45.83 грн
500+ 35.53 грн
1000+ 29.11 грн
Мінімальне замовлення: 5
V30DL45BP-M3/I v30dl45bp.pdf
V30DL45BP-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 30A SMPD
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: SMPD
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 30 A
Current - Reverse Leakage @ Vr: 3 mA @ 45 V
на замовлення 6329 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+70.96 грн
10+ 55.92 грн
100+ 43.48 грн
500+ 34.59 грн
1000+ 28.18 грн
Мінімальне замовлення: 5
V40DL45BP-M3/I v40dl45bp.pdf
V40DL45BP-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 40A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 40 A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2000+35.16 грн
Мінімальне замовлення: 2000
V40DL45BP-M3/I v40dl45bp.pdf
V40DL45BP-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 40A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 40 A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
на замовлення 5974 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+84.7 грн
10+ 66.94 грн
100+ 52.09 грн
500+ 41.43 грн
1000+ 33.75 грн
Мінімальне замовлення: 4
PLZ18A-G3/H plzseries.pdf
PLZ18A-G3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 500MW DO219AC
товар відсутній
PLZ18C-G3/H plzseries.pdf
PLZ18C-G3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 500MW DO219AC
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 13 V
товар відсутній
PLZ24B-G3/H plzseries.pdf
PLZ24B-G3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 23.19V 500MW DO219AC
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 23.19 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 19 V
товар відсутній
SE10DGHM3/I se10db-m3.pdf
SE10DGHM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 3A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 67pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A
Current - Reverse Leakage @ Vr: 15 µA @ 400 V
Qualification: AEC-Q101
товар відсутній
V40DL45-M3/I v40dl45.pdf
V40DL45-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 40A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 40 A
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2000+35.16 грн
Мінімальне замовлення: 2000
V40M150C-M3/4W v40m150c.pdf
V40M150C-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 150V TO220
на замовлення 22 шт:
термін постачання 21-31 дні (днів)
V60M120C-M3/4W v60m120c.pdf
V60M120C-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V TO220
на замовлення 1888 шт:
термін постачання 21-31 дні (днів)
PLZ18A-G3/H plzseries.pdf
PLZ18A-G3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 500MW DO219AC
на замовлення 1861 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
13+23.65 грн
16+ 18.88 грн
100+ 10.04 грн
500+ 6.2 грн
1000+ 4.22 грн
Мінімальне замовлення: 13
PLZ18C-G3/H plzseries.pdf
PLZ18C-G3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 500MW DO219AC
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 13 V
на замовлення 1432 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
14+22.13 грн
21+ 14.55 грн
100+ 7.11 грн
500+ 5.56 грн
1000+ 3.87 грн
Мінімальне замовлення: 14
PLZ24B-G3/H plzseries.pdf
PLZ24B-G3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 23.19V 500MW DO219AC
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 23.19 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-219AC (microSMF)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 19 V
товар відсутній
SE10DGHM3/I se10db-m3.pdf
SE10DGHM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 3A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 67pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A
Current - Reverse Leakage @ Vr: 15 µA @ 400 V
Qualification: AEC-Q101
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+65.62 грн
10+ 54.52 грн
Мінімальне замовлення: 5
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