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VS-4EWH02FNHM3 VISHAY


vs-ewh02hfn.pdf Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 4A; DPAK; automotive industry
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: DPAK
Application: automotive industry
кількість в упаковці: 1 шт
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Технічний опис VS-4EWH02FNHM3 VISHAY

Description: DIODE GEN PURP 200V 4A TO252, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 20 ns, Technology: Standard, Current - Average Rectified (Io): 4A, Supplier Device Package: TO-252AA (DPAK), Operating Temperature - Junction: -65°C ~ 175°C, Grade: Automotive, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 950 mV @ 4 A, Current - Reverse Leakage @ Vr: 3 µA @ 200 V, Qualification: AEC-Q101.

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VS-4EWH02FNHM3 VS-4EWH02FNHM3 Виробник : Vishay General Semiconductor - Diodes Division vs-ewh02hfn.pdf Description: DIODE GEN PURP 200V 4A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 4 A
Current - Reverse Leakage @ Vr: 3 µA @ 200 V
Qualification: AEC-Q101
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VS-4EWH02FNHM3 VS-4EWH02FNHM3 Виробник : Vishay Semiconductors vs-ewh02hfn.pdf Rectifiers Freds - D-PAK-e3
товар відсутній
VS-4EWH02FNHM3 Виробник : VISHAY vs-ewh02hfn.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 4A; DPAK; automotive industry
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: DPAK
Application: automotive industry
товар відсутній